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JPS5360567A - Electrode formation method of semiconductor device - Google Patents

Electrode formation method of semiconductor device

Info

Publication number
JPS5360567A
JPS5360567A JP13614876A JP13614876A JPS5360567A JP S5360567 A JPS5360567 A JP S5360567A JP 13614876 A JP13614876 A JP 13614876A JP 13614876 A JP13614876 A JP 13614876A JP S5360567 A JPS5360567 A JP S5360567A
Authority
JP
Japan
Prior art keywords
semiconductor device
formation method
electrode formation
gold
plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13614876A
Other languages
Japanese (ja)
Inventor
Makoto Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13614876A priority Critical patent/JPS5360567A/en
Publication of JPS5360567A publication Critical patent/JPS5360567A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make fine electrodes with high performance and high yield by selectively plating a metal having high adhesion to gold and SiO2 films with a mask having been used for selective plating of gold.
COPYRIGHT: (C)1978,JPO&Japio
JP13614876A 1976-11-11 1976-11-11 Electrode formation method of semiconductor device Pending JPS5360567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13614876A JPS5360567A (en) 1976-11-11 1976-11-11 Electrode formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13614876A JPS5360567A (en) 1976-11-11 1976-11-11 Electrode formation method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5360567A true JPS5360567A (en) 1978-05-31

Family

ID=15168420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13614876A Pending JPS5360567A (en) 1976-11-11 1976-11-11 Electrode formation method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5360567A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590204A (en) * 1991-03-20 1993-04-09 Philips Gloeilampenfab:Nv Manufacture of semiconductor device
JP2013141000A (en) * 2007-03-23 2013-07-18 Cree Inc Semiconductor device
US9041064B2 (en) 2006-11-21 2015-05-26 Cree, Inc. High voltage GaN transistor
US9419124B2 (en) 2001-07-24 2016-08-16 Cree, Inc. Insulating gate AlGaN/GaN HEMT

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0590204A (en) * 1991-03-20 1993-04-09 Philips Gloeilampenfab:Nv Manufacture of semiconductor device
US9419124B2 (en) 2001-07-24 2016-08-16 Cree, Inc. Insulating gate AlGaN/GaN HEMT
US10224427B2 (en) 2001-07-24 2019-03-05 Cree, Inc. Insulting gate AlGaN/GaN HEMT
US9041064B2 (en) 2006-11-21 2015-05-26 Cree, Inc. High voltage GaN transistor
US9450081B2 (en) 2006-11-21 2016-09-20 Cree, Inc. High voltage GaN transistor
JP2013141000A (en) * 2007-03-23 2013-07-18 Cree Inc Semiconductor device
US9240473B2 (en) 2007-03-23 2016-01-19 Cree, Inc. High temperature performance capable gallium nitride transistor

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