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JPS5360582A - Semiconductor ingegrated circuit device - Google Patents

Semiconductor ingegrated circuit device

Info

Publication number
JPS5360582A
JPS5360582A JP13534076A JP13534076A JPS5360582A JP S5360582 A JPS5360582 A JP S5360582A JP 13534076 A JP13534076 A JP 13534076A JP 13534076 A JP13534076 A JP 13534076A JP S5360582 A JPS5360582 A JP S5360582A
Authority
JP
Japan
Prior art keywords
ingegrated
semiconductor
circuit device
increase
mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13534076A
Other languages
Japanese (ja)
Other versions
JPS5937860B2 (en
Inventor
Takahiro Okabe
Kenji Kaneko
Toru Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP51135340A priority Critical patent/JPS5937860B2/en
Publication of JPS5360582A publication Critical patent/JPS5360582A/en
Publication of JPS5937860B2 publication Critical patent/JPS5937860B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE:To increase the density of integration and also increase gm by forming a MOSFET and a bipolar transistor in integral structure.
JP51135340A 1976-11-12 1976-11-12 Semiconductor integrated circuit device Expired JPS5937860B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51135340A JPS5937860B2 (en) 1976-11-12 1976-11-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51135340A JPS5937860B2 (en) 1976-11-12 1976-11-12 Semiconductor integrated circuit device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60134151A Division JPS6122662A (en) 1985-06-21 1985-06-21 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS5360582A true JPS5360582A (en) 1978-05-31
JPS5937860B2 JPS5937860B2 (en) 1984-09-12

Family

ID=15149474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51135340A Expired JPS5937860B2 (en) 1976-11-12 1976-11-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5937860B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563868A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor integrated circuit
JPS62115765A (en) * 1985-11-15 1987-05-27 Hitachi Ltd semiconductor equipment
JPS62174965A (en) * 1986-01-28 1987-07-31 Nec Corp Integrated circuit
JPS6348857A (en) * 1986-08-19 1988-03-01 Toshiba Corp semiconductor equipment
US6337501B1 (en) 1999-04-08 2002-01-08 Denso Corporation Semiconductor device having bipolar transistor and MOS transistor
US6897515B2 (en) 2000-07-11 2005-05-24 Sanyo Electric Co., Ltd. Semiconductor memory and semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563868A (en) * 1978-11-08 1980-05-14 Nec Corp Semiconductor integrated circuit
JPS62115765A (en) * 1985-11-15 1987-05-27 Hitachi Ltd semiconductor equipment
JPS62174965A (en) * 1986-01-28 1987-07-31 Nec Corp Integrated circuit
JPS6348857A (en) * 1986-08-19 1988-03-01 Toshiba Corp semiconductor equipment
US6337501B1 (en) 1999-04-08 2002-01-08 Denso Corporation Semiconductor device having bipolar transistor and MOS transistor
US6897515B2 (en) 2000-07-11 2005-05-24 Sanyo Electric Co., Ltd. Semiconductor memory and semiconductor device

Also Published As

Publication number Publication date
JPS5937860B2 (en) 1984-09-12

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