JPS5362987A - Production of mos type semiconductor device - Google Patents
Production of mos type semiconductor deviceInfo
- Publication number
- JPS5362987A JPS5362987A JP13895076A JP13895076A JPS5362987A JP S5362987 A JPS5362987 A JP S5362987A JP 13895076 A JP13895076 A JP 13895076A JP 13895076 A JP13895076 A JP 13895076A JP S5362987 A JPS5362987 A JP S5362987A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- type semiconductor
- mos type
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To obtain a MOS transistor of good characteristics by using tantalum pentaoxide for a gate oxide film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895076A JPS5362987A (en) | 1976-11-17 | 1976-11-17 | Production of mos type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13895076A JPS5362987A (en) | 1976-11-17 | 1976-11-17 | Production of mos type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5362987A true JPS5362987A (en) | 1978-06-05 |
Family
ID=15233935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13895076A Pending JPS5362987A (en) | 1976-11-17 | 1976-11-17 | Production of mos type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5362987A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134451A (en) * | 1989-04-17 | 1992-07-28 | Oki Electric Industry Co., Ltd. | MOS semiconductive device |
| WO1999031721A1 (en) * | 1997-12-18 | 1999-06-24 | Advanced Micro Devices, Inc. | High k gate electrode |
| US6559518B1 (en) | 1998-10-01 | 2003-05-06 | Matsushita Electric Industrial Co., Ltd. | MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device |
-
1976
- 1976-11-17 JP JP13895076A patent/JPS5362987A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5134451A (en) * | 1989-04-17 | 1992-07-28 | Oki Electric Industry Co., Ltd. | MOS semiconductive device |
| WO1999031721A1 (en) * | 1997-12-18 | 1999-06-24 | Advanced Micro Devices, Inc. | High k gate electrode |
| US6258675B1 (en) | 1997-12-18 | 2001-07-10 | Advanced Micro Devices, Inc. | High K gate electrode |
| US6559518B1 (en) | 1998-10-01 | 2003-05-06 | Matsushita Electric Industrial Co., Ltd. | MOS heterostructure, semiconductor device with the structure, and method for fabricating the semiconductor device |
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