JPS6417867A - Manufacture of carbon and boron nitride - Google Patents
Manufacture of carbon and boron nitrideInfo
- Publication number
- JPS6417867A JPS6417867A JP62175560A JP17556087A JPS6417867A JP S6417867 A JPS6417867 A JP S6417867A JP 62175560 A JP62175560 A JP 62175560A JP 17556087 A JP17556087 A JP 17556087A JP S6417867 A JPS6417867 A JP S6417867A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- plasma
- substrate
- space
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title abstract 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052799 carbon Inorganic materials 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007789 gas Substances 0.000 abstract 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 239000001257 hydrogen Substances 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910052757 nitrogen Inorganic materials 0.000 abstract 2
- 238000010574 gas phase reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910017464 nitrogen compound Inorganic materials 0.000 abstract 1
- 150000002830 nitrogen compounds Chemical class 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To form a substance composed principally of carbon containing nitrogen and boron and boron nitride, by carrying out plasma gas-phase reaction by using a carbide gas, hydrogen, a nitrogen-compound gas, and a boride gas. CONSTITUTION:A substrate 10 is disposed on a holder 10', which is provided to a plasma-producing space 1, and then the space 1 is evacuated to <=about 1X10<-6>torr by means of a turbo-molecular pump 17, etc. Hydrogen 6 is introduced into the plasma-producing region 1 in the above state, and microwaves are applied from the outside and a magnetic field is impressed from external magnets 5, 5', by which high-density plasma is produced and the surface of the substrate 10 is cleaned. Subsequently, a carbide gas (C2H2, etc.) is introduced by means of hydrogen 6 into the plasma-producing space 1 and also a nitride gas 7, such as NH3, and a boride gas 8, such as BF3, are introduced to regulate space pressure to 1X760torr. Further, the substrate 10 is heated to about 800-1,000 deg.C by means of a heater 20 and plasma energy. By this method, a film composed principally of carbon containing nitrogen and boron and boron nitride can be formed on the substrate 10.
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17556087A JPH0623437B2 (en) | 1987-07-13 | 1987-07-13 | Method for producing carbon and boron nitride |
| KR1019880001649A KR900008505B1 (en) | 1987-02-24 | 1988-02-15 | Microwave Enhanced CVD Method for Carbon Precipitation |
| DE8888301364T DE3876120T2 (en) | 1987-02-24 | 1988-02-18 | CHEMICAL GAS PHASE DEPOSITION METHOD FOR PRODUCING A CARBON LAYER. |
| EP88301364A EP0284190B1 (en) | 1987-02-24 | 1988-02-18 | Enhanced cvd method for deposition of carbon |
| US07/159,610 US4869923A (en) | 1987-02-24 | 1988-02-24 | Microwave enhanced CVD method for depositing carbon |
| CN88101061A CN1036078C (en) | 1987-02-24 | 1988-02-24 | Microwave enhanced CVD method for depositing carbon |
| US07/329,877 US5015494A (en) | 1987-02-24 | 1989-03-28 | Microwave enhanced CVD method for depositing diamond |
| US07/329,879 US4973494A (en) | 1987-02-24 | 1989-03-29 | Microwave enhanced CVD method for depositing a boron nitride and carbon |
| US07/380,328 US5238705A (en) | 1987-02-24 | 1989-07-17 | Carbonaceous protective films and method of depositing the same |
| US07/790,068 US5270029A (en) | 1987-02-24 | 1991-11-12 | Carbon substance and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17556087A JPH0623437B2 (en) | 1987-07-13 | 1987-07-13 | Method for producing carbon and boron nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6417867A true JPS6417867A (en) | 1989-01-20 |
| JPH0623437B2 JPH0623437B2 (en) | 1994-03-30 |
Family
ID=15998216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17556087A Expired - Fee Related JPH0623437B2 (en) | 1987-02-24 | 1987-07-13 | Method for producing carbon and boron nitride |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0623437B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05311443A (en) * | 1991-03-26 | 1993-11-22 | Semiconductor Energy Lab Co Ltd | Production of diamond coated member |
| JP2002289616A (en) * | 2001-03-28 | 2002-10-04 | Mitsubishi Heavy Ind Ltd | Film forming method and film forming apparatus |
| JP2002293516A (en) * | 2001-03-28 | 2002-10-09 | Mitsubishi Heavy Ind Ltd | Film forming method and film forming apparatus |
-
1987
- 1987-07-13 JP JP17556087A patent/JPH0623437B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05311443A (en) * | 1991-03-26 | 1993-11-22 | Semiconductor Energy Lab Co Ltd | Production of diamond coated member |
| JP2002289616A (en) * | 2001-03-28 | 2002-10-04 | Mitsubishi Heavy Ind Ltd | Film forming method and film forming apparatus |
| JP2002293516A (en) * | 2001-03-28 | 2002-10-09 | Mitsubishi Heavy Ind Ltd | Film forming method and film forming apparatus |
| US6958175B2 (en) | 2001-03-28 | 2005-10-25 | Kabushiki Kaisha Watanabe Shoko | Film forming method and film forming device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0623437B2 (en) | 1994-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |