JPS6457761A - Photovoltaic power generation device - Google Patents

Abstract

PURPOSE:To realize a structure of electrode having low serial resistance and to obtain a photovoltaic power generation device having solar cell characteristics improved in fill factor (FF), by interposing a metal layer totally or partially between a transparent conducting film of ITO or the like and an amorphous layer on the light incident side of the device. CONSTITUTION:An N-type conducting layer is formed by using SiH4, PH3 or H2 to a thickness of several hundred angstroms on a stainless substrate 1. Subsequently, using SiH4 or H2, an N-type conducting layer is deposited to a thickness of several angstroms to about 1mum. Further, using SiH4, B2H6 or H2, an N-type conducting layer is deposited to a thickness of several hundred angstroms. All of these conducting layers are deposited by glow discharge. An amorphous layer 2 with PIN junction is thus obtained. Subsequently, a mask of Al, Ag or the like is vapor deposited so that a metal layer 3 consisting of many island-shaped pieces with a diameter of several to several tens micrometers is formed to a thickness of several hundred angstroms. The metal layer 3 consisting of the small pieces is in ohmic contacted with the amorphous layer 2 with low resistance. Further, transparent conducting film 4 of ITO or the like is deposited thereon to a thickness of 600-800 angstroms. Finally, a lattice electrode 5 of Al, Ag or the like is produced by vapor deposition with mask or screen printing.