[go: up one dir, main page]

JPS6459960A - Nonvolatile semiconductor memory element - Google Patents

Nonvolatile semiconductor memory element

Info

Publication number
JPS6459960A
JPS6459960A JP62217500A JP21750087A JPS6459960A JP S6459960 A JPS6459960 A JP S6459960A JP 62217500 A JP62217500 A JP 62217500A JP 21750087 A JP21750087 A JP 21750087A JP S6459960 A JPS6459960 A JP S6459960A
Authority
JP
Japan
Prior art keywords
drain
source
electrodes
independent
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62217500A
Other languages
Japanese (ja)
Other versions
JPH0779138B2 (en
Inventor
Hidekazu Suzuki
Toshihiro Sekikawa
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP62217500A priority Critical patent/JPH0779138B2/en
Publication of JPS6459960A publication Critical patent/JPS6459960A/en
Publication of JPH0779138B2 publication Critical patent/JPH0779138B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To enable a nonvolatile semiconductor memory element to store many states or bits in one element by a method wherein plural channels independent of each other are selectively formed between a source and a drain or plural effective charge storage regions independent of each other are provided along a broadwise direction intersected with a lengthwise direction at right angles. CONSTITUTION:A source 21 and a drain 22 are formed on a superficial region of a semiconductor substrate 11 separating from each other at required distance. Plural electrodes (in Figure, three electrodes 51, 52, and 53) formed out of adequate conductive materials such as polycrystalline silicon, metal, silicide, or the like are formed in the range corresponding to the space between the source and the drain on a gate insulating film 8 or a charge storage component 6. Provided that the direction in which the source is in line with the drain is prescribed as a lengthwise direction (this corresponds usually to a case in which the concept such as a channel length or a channel width is made to be prescribed), these electrodes, 51, 52, and 53, are made to be separated from each other in a broadwise direction and independent of each other.
JP62217500A 1987-08-31 1987-08-31 Non-volatile semiconductor memory device Expired - Lifetime JPH0779138B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62217500A JPH0779138B2 (en) 1987-08-31 1987-08-31 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62217500A JPH0779138B2 (en) 1987-08-31 1987-08-31 Non-volatile semiconductor memory device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP6095833A Division JPH0773116B2 (en) 1994-04-08 1994-04-08 Non-volatile semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS6459960A true JPS6459960A (en) 1989-03-07
JPH0779138B2 JPH0779138B2 (en) 1995-08-23

Family

ID=16705210

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62217500A Expired - Lifetime JPH0779138B2 (en) 1987-08-31 1987-08-31 Non-volatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPH0779138B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295222B1 (en) * 1995-10-16 2001-09-17 가네꼬 히사시 Non-Volatile Semiconductor Memory Devices
US6420741B1 (en) 1999-03-19 2002-07-16 Fujitsu Limited Ferroelectric memory having electromagnetic wave shield structure
KR100346021B1 (en) * 1997-06-27 2002-09-18 닛본 덴기 가부시끼가이샤 Nonvolatile semiconductor memory
JP2004221584A (en) * 2003-01-09 2004-08-05 Samsung Electronics Co Ltd SONOS memory device having side gate and method of manufacturing the same
JP2005294565A (en) * 2004-03-31 2005-10-20 Toshiba Corp Nonvolatile semiconductor memory device and semiconductor device including the nonvolatile semiconductor memory device
JP2006128703A (en) * 2004-10-28 2006-05-18 Samsung Electronics Co Ltd Semiconductor device including multi-bit nonvolatile memory cell and manufacturing method thereof
JP2006140482A (en) * 2004-11-09 2006-06-01 Samsung Electronics Co Ltd Flash memory device and operation method thereof
WO2007026494A1 (en) * 2005-08-30 2007-03-08 Spansion Llc Semiconductor device and method for manufacturing same
JP2007511090A (en) * 2003-11-10 2007-04-26 フリースケール セミコンダクター インコーポレイテッド Transistor having three electrically insulated electrodes and method of forming the transistor
JP2007235120A (en) * 2006-02-03 2007-09-13 Denso Corp Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357771A (en) * 1976-11-04 1978-05-25 Sony Corp Non-volatile memory transistor
JPS5834978A (en) * 1981-08-26 1983-03-01 Matsushita Electronics Corp semiconductor storage device
JPS60169172A (en) * 1984-02-13 1985-09-02 Toshiba Corp Insulated gate field effect transistor
JPS6150369A (en) * 1984-08-18 1986-03-12 Mitsubishi Electric Corp Non-volatile semiconductor memory element
JPS6294987A (en) * 1985-10-21 1987-05-01 Nec Corp Mis field effect semiconductor device and detecting method for information thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5357771A (en) * 1976-11-04 1978-05-25 Sony Corp Non-volatile memory transistor
JPS5834978A (en) * 1981-08-26 1983-03-01 Matsushita Electronics Corp semiconductor storage device
JPS60169172A (en) * 1984-02-13 1985-09-02 Toshiba Corp Insulated gate field effect transistor
JPS6150369A (en) * 1984-08-18 1986-03-12 Mitsubishi Electric Corp Non-volatile semiconductor memory element
JPS6294987A (en) * 1985-10-21 1987-05-01 Nec Corp Mis field effect semiconductor device and detecting method for information thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100295222B1 (en) * 1995-10-16 2001-09-17 가네꼬 히사시 Non-Volatile Semiconductor Memory Devices
KR100346021B1 (en) * 1997-06-27 2002-09-18 닛본 덴기 가부시끼가이샤 Nonvolatile semiconductor memory
US6420741B1 (en) 1999-03-19 2002-07-16 Fujitsu Limited Ferroelectric memory having electromagnetic wave shield structure
JP2004221584A (en) * 2003-01-09 2004-08-05 Samsung Electronics Co Ltd SONOS memory device having side gate and method of manufacturing the same
JP2007511090A (en) * 2003-11-10 2007-04-26 フリースケール セミコンダクター インコーポレイテッド Transistor having three electrically insulated electrodes and method of forming the transistor
JP2005294565A (en) * 2004-03-31 2005-10-20 Toshiba Corp Nonvolatile semiconductor memory device and semiconductor device including the nonvolatile semiconductor memory device
JP2006128703A (en) * 2004-10-28 2006-05-18 Samsung Electronics Co Ltd Semiconductor device including multi-bit nonvolatile memory cell and manufacturing method thereof
JP2006140482A (en) * 2004-11-09 2006-06-01 Samsung Electronics Co Ltd Flash memory device and operation method thereof
WO2007026494A1 (en) * 2005-08-30 2007-03-08 Spansion Llc Semiconductor device and method for manufacturing same
WO2007026391A1 (en) * 2005-08-30 2007-03-08 Spansion Llc Semiconductor device and fabrication method thereof
US7589371B2 (en) 2005-08-30 2009-09-15 Spansion Llc Semiconductor device and fabrication method therefor
US7915661B2 (en) 2005-08-30 2011-03-29 Spansion Llc Semiconductor device and fabrication method therefor
JP2007235120A (en) * 2006-02-03 2007-09-13 Denso Corp Semiconductor device

Also Published As

Publication number Publication date
JPH0779138B2 (en) 1995-08-23

Similar Documents

Publication Publication Date Title
TW343391B (en) Nonvolatile semiconductor memory and methods for manufacturing and using the same
ATE478437T1 (en) NON-VOLATILE SEMICONDUCTOR MEMORY ARRANGEMENT
US4477825A (en) Electrically programmable and erasable memory cell
GB1525681A (en) Memory device
EP0029099A3 (en) Semiconductor memory device
JPS55156371A (en) Non-volatile semiconductor memory device
KR930020661A (en) Semiconductor devices
JPS649663A (en) Electrically erasable programmable read-only memory
KR910013558A (en) Nonvolatile Semiconductor Memory and Manufacturing Method
EP0045578A3 (en) Semiconductor memory device
HK42290A (en) A semiconductor memory device
JPS6459960A (en) Nonvolatile semiconductor memory element
KR900004022A (en) Nonvolatile Semiconductor Memory
KR940006272A (en) Fast Access Bypass Metal Virtual Ground (AMG) A method of making electrically programmable read only memory (EPROM).
HK45586A (en) Nonvolatile memory device
WO1997020337A3 (en) Read-only memory cell array and method for the fabrication thereof
GB2040565A (en) Memory comprising v-groove igfetss
EP0369676A3 (en) Semi-conductor non-volatile memory
US4760554A (en) Staggered contacts in arrays of programmable memory cells
JPS5636166A (en) Nonvolatile semiconductor memory
EP0623962A1 (en) Gate electrode of power MOS field effect transistor
TW353802B (en) Semiconductor integrated circuit and manufacturing method therefor
JPS6421970A (en) Nonvolatile semiconductor memory device
EP0109853A3 (en) Semiconductor memory devices and methods for making the same
EP0294989A3 (en) Non-volatile semi-conductor memory device

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term