JPS645999A - Production of thin film of ferroelectric single crystal - Google Patents
Production of thin film of ferroelectric single crystalInfo
- Publication number
- JPS645999A JPS645999A JP16216587A JP16216587A JPS645999A JP S645999 A JPS645999 A JP S645999A JP 16216587 A JP16216587 A JP 16216587A JP 16216587 A JP16216587 A JP 16216587A JP S645999 A JPS645999 A JP S645999A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- lithium niobate
- plate
- amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title abstract 11
- 239000010409 thin film Substances 0.000 title abstract 9
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 abstract 4
- 229910052594 sapphire Inorganic materials 0.000 abstract 4
- 239000010980 sapphire Substances 0.000 abstract 4
- 239000000126 substance Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To easily form a single crystal and to obtain the title thin film of a ferroelectric single crystal by depositing a thin single crystal film on a substrate substance through the thin film of an amorphous or polycrystal ferroelectric single crystal consisting of the same substance as the single crystal. CONSTITUTION:The thin film of an amorphous or polycrystal ferroelectric single crystal is deposited in specified thickness on the substrate substance. The thin film of a single crystal consisting of the same material as the above- mentioned thin film is deposited on the thin film while heating the single crystal. For example, a sapphire plate 1 is cleaned to obtain a clean surface, and amorphous lithium niobate is formed on the plate 1 in about 40-70mm thickness as a predeposited first layer 2 while keeping the plate 1 at a low temp. such as room temp. to mitigate the mismatching in the lattice constant between sapphire and lithium niobate. The sapphire plate 1 is then heated to about 500-600 deg.C, and a second layer 3 (thin single crystal film) of lithium niobate is formed. By this method, the thin film of a lithium niobate single crystal having good characteristics can be formed on the sapphire plate, etc., having the lattice constant highly mismatched with that of the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16216587A JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16216587A JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS645999A true JPS645999A (en) | 1989-01-10 |
Family
ID=15749258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16216587A Pending JPS645999A (en) | 1987-06-29 | 1987-06-29 | Production of thin film of ferroelectric single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS645999A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
| JPH08212830A (en) * | 1994-11-11 | 1996-08-20 | Fuji Xerox Co Ltd | Orienting ferroelectric thin film element and its manufacture |
| JP2006195383A (en) * | 2005-01-17 | 2006-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator and manufacturing method thereof |
| KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
| JP2008069058A (en) * | 2006-09-15 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming LiNbO3 epitaxial film |
| JPWO2021066156A1 (en) * | 2019-10-04 | 2021-04-08 | ||
| WO2024075690A1 (en) * | 2022-10-05 | 2024-04-11 | 株式会社シンクロン | Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof |
-
1987
- 1987-06-29 JP JP16216587A patent/JPS645999A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5070026A (en) * | 1989-06-26 | 1991-12-03 | Spire Corporation | Process of making a ferroelectric electronic component and product |
| JPH08212830A (en) * | 1994-11-11 | 1996-08-20 | Fuji Xerox Co Ltd | Orienting ferroelectric thin film element and its manufacture |
| KR100816626B1 (en) * | 2000-08-24 | 2008-03-24 | 오우크-미츠이, 인크 . | Formation of an embedded capacitor plane using a thin dielectric |
| JP2006195383A (en) * | 2005-01-17 | 2006-07-27 | Nippon Telegr & Teleph Corp <Ntt> | Optical modulator and manufacturing method thereof |
| JP2008069058A (en) * | 2006-09-15 | 2008-03-27 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming LiNbO3 epitaxial film |
| JPWO2021066156A1 (en) * | 2019-10-04 | 2021-04-08 | ||
| WO2021066156A1 (en) * | 2019-10-04 | 2021-04-08 | 株式会社Flosfia | Crystalline laminate structure and semiconductor device |
| WO2024075690A1 (en) * | 2022-10-05 | 2024-04-11 | 株式会社シンクロン | Homoepitaxial thin film, and manufacturing method and manufacturing apparatus thereof |
| JP7531961B1 (en) * | 2022-10-05 | 2024-08-13 | 株式会社シンクロン | Homoepitaxial thin film, its manufacturing method and manufacturing device |
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