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JPS6461052A - Photoelectric device - Google Patents

Photoelectric device

Info

Publication number
JPS6461052A
JPS6461052A JP62218178A JP21817887A JPS6461052A JP S6461052 A JPS6461052 A JP S6461052A JP 62218178 A JP62218178 A JP 62218178A JP 21817887 A JP21817887 A JP 21817887A JP S6461052 A JPS6461052 A JP S6461052A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
vacuum depositing
depositing method
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62218178A
Other languages
Japanese (ja)
Inventor
Takahiro Nishikura
Kosuke Ikeda
Noboru Yoshigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62218178A priority Critical patent/JPS6461052A/en
Publication of JPS6461052A publication Critical patent/JPS6461052A/en
Pending legal-status Critical Current

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To reduce short-circuiting due to a pinhole and to improve breakdown strength by forming two or more second semiconductor layers separately from each other so as to cover part of a first semiconductor layer formed on a light transmissible insulating plate. CONSTITUTION:A first semiconductor layer 1 (P-type ZnTe film) is formed by a vacuum depositing method on a glass substrate 3, and so etched as to become a predetermined photodetecting area. Then, a second semiconductor layer 2 (N-type CdSe film) is so formed by a vacuum depositing method as to cover at least the layer 1. A photoresist (not shown in the figure) is so formed except a base 4 as to have a predetermined groove on the layer 1, and the layer 2 is selectively etched. Eventually, a common electrode 7a and individual electrodes 7b are formed on the layer 2.
JP62218178A 1987-09-01 1987-09-01 Photoelectric device Pending JPS6461052A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62218178A JPS6461052A (en) 1987-09-01 1987-09-01 Photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62218178A JPS6461052A (en) 1987-09-01 1987-09-01 Photoelectric device

Publications (1)

Publication Number Publication Date
JPS6461052A true JPS6461052A (en) 1989-03-08

Family

ID=16715835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62218178A Pending JPS6461052A (en) 1987-09-01 1987-09-01 Photoelectric device

Country Status (1)

Country Link
JP (1) JPS6461052A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008125936A (en) * 2006-11-24 2008-06-05 Katsufumi Aoyanagi Pot
US7832357B2 (en) 2007-06-29 2010-11-16 Uni-Charm Petcare Corporation Animal litter box
US7849818B2 (en) 2007-06-29 2010-12-14 Uni-Charm Corporation Animal litter box

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008125936A (en) * 2006-11-24 2008-06-05 Katsufumi Aoyanagi Pot
US7832357B2 (en) 2007-06-29 2010-11-16 Uni-Charm Petcare Corporation Animal litter box
US7849818B2 (en) 2007-06-29 2010-12-14 Uni-Charm Corporation Animal litter box
US7987818B2 (en) 2007-06-29 2011-08-02 Uni-Charm Corporation Animal litter box

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