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JPS6461061A - A-si thin film transistor - Google Patents

A-si thin film transistor

Info

Publication number
JPS6461061A
JPS6461061A JP62219347A JP21934787A JPS6461061A JP S6461061 A JPS6461061 A JP S6461061A JP 62219347 A JP62219347 A JP 62219347A JP 21934787 A JP21934787 A JP 21934787A JP S6461061 A JPS6461061 A JP S6461061A
Authority
JP
Japan
Prior art keywords
film
approx
source
thin film
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62219347A
Other languages
Japanese (ja)
Inventor
Shinichi Soeda
Yasuyoshi Mishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62219347A priority Critical patent/JPS6461061A/en
Publication of JPS6461061A publication Critical patent/JPS6461061A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To reduce a current between a drain and a source at the time of nonapplying a gate voltage by employing as a gate insulating film of a thin film transistor having an a-Si layer an Al2O3 film between source, drain electrodes S, D and a gate electrode G. CONSTITUTION:A drain electrode D and a source electrode S are formed in thickness of approx. 1000Angstrom on a glass substrate 1. To form an ohmic contact between an a-Si thin film 3 and source, drain electrodes S, D, ohmic contact layers 2s, 2d made of n<+> type a-Si film are laminated approx. 300-500Angstrom thick. Further, the film 3 as an active layer is formed approx. 1000Angstrom thick. An Al2O3 film is formed as a gate insulating film 4 approx. 1000-1500Angstrom thick on the film 3. A gate electrode G is formed on the film 4. Then, in order to diffuse aluminum in the film 3, it is annealed.
JP62219347A 1987-09-01 1987-09-01 A-si thin film transistor Pending JPS6461061A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62219347A JPS6461061A (en) 1987-09-01 1987-09-01 A-si thin film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62219347A JPS6461061A (en) 1987-09-01 1987-09-01 A-si thin film transistor

Publications (1)

Publication Number Publication Date
JPS6461061A true JPS6461061A (en) 1989-03-08

Family

ID=16734027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62219347A Pending JPS6461061A (en) 1987-09-01 1987-09-01 A-si thin film transistor

Country Status (1)

Country Link
JP (1) JPS6461061A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208476A (en) * 1990-06-08 1993-05-04 Seiko Epson Corporation Low leakage current offset-gate thin film transistor structure
US5347146A (en) * 1991-12-30 1994-09-13 Goldstar Co., Ltd. Polysilicon thin film transistor of a liquid crystal display
CN100442532C (en) * 1992-07-06 2008-12-10 株式会社半导体能源研究所 Active Matrix Display Devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208476A (en) * 1990-06-08 1993-05-04 Seiko Epson Corporation Low leakage current offset-gate thin film transistor structure
US5347146A (en) * 1991-12-30 1994-09-13 Goldstar Co., Ltd. Polysilicon thin film transistor of a liquid crystal display
CN100442532C (en) * 1992-07-06 2008-12-10 株式会社半导体能源研究所 Active Matrix Display Devices

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