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JPS64757A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS64757A
JPS64757A JP62155681A JP15568187A JPS64757A JP S64757 A JPS64757 A JP S64757A JP 62155681 A JP62155681 A JP 62155681A JP 15568187 A JP15568187 A JP 15568187A JP S64757 A JPS64757 A JP S64757A
Authority
JP
Japan
Prior art keywords
channel region
tisi
thickness
implanted
silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62155681A
Other languages
Japanese (ja)
Other versions
JP2658057B2 (en
JPH01757A (en
Inventor
Juri Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15611242&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS64757(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62155681A priority Critical patent/JP2658057B2/en
Publication of JPH01757A publication Critical patent/JPH01757A/en
Publication of JPS64757A publication Critical patent/JPS64757A/en
Application granted granted Critical
Publication of JP2658057B2 publication Critical patent/JP2658057B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a semiconductor device, which can display the maximum electric characteristics within a design rule and can achieve a high speed, by lining silicide layers having the different thicknesses in the active regions of a P-channel region and an N-channel region.
CONSTITUTION: Ti is formed to a thickness of 600Å on BF2-ion implanted silicon and silicon, in which 5×1016-2 of As ions are implanted. Thereafter annealing is performed at 680∼700°C for 30sec. Then TiSi2 9 is formed to a thickness of about 0.1μm on the BF2-ion implanted layer. TiSi2 8 having a thickness of about 0.06μm and TiSi are formed on the As implanted region. The TiSi is removed with RCA liquid. Therefore, the Ti silicide films having the different thicknesses are formed in a P-channel region and an N-channel region by the same process. Therefore, the silicide layer in the N-channel region is thin. The silicide layer in the P-channel region can be made thick within the allowance of a design rule.
COPYRIGHT: (C)1989,JPO&Japio
JP62155681A 1987-06-23 1987-06-23 Semiconductor device Expired - Lifetime JP2658057B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62155681A JP2658057B2 (en) 1987-06-23 1987-06-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62155681A JP2658057B2 (en) 1987-06-23 1987-06-23 Semiconductor device

Publications (3)

Publication Number Publication Date
JPH01757A JPH01757A (en) 1989-01-05
JPS64757A true JPS64757A (en) 1989-01-05
JP2658057B2 JP2658057B2 (en) 1997-09-30

Family

ID=15611242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62155681A Expired - Lifetime JP2658057B2 (en) 1987-06-23 1987-06-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JP2658057B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002047167A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
US6649976B2 (en) 1994-01-28 2003-11-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having metal silicide film and manufacturing method thereof
JP2008311673A (en) * 2000-12-08 2008-12-25 Renesas Technology Corp Semiconductor device and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295822A (en) * 1985-10-23 1987-05-02 Hitachi Ltd Manufacturing method of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6295822A (en) * 1985-10-23 1987-05-02 Hitachi Ltd Manufacturing method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6649976B2 (en) 1994-01-28 2003-11-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having metal silicide film and manufacturing method thereof
WO2002047167A1 (en) * 2000-12-08 2002-06-13 Hitachi, Ltd. Semiconductor device
JP2003086708A (en) * 2000-12-08 2003-03-20 Hitachi Ltd Semiconductor device and manufacturing method thereof
US6982465B2 (en) 2000-12-08 2006-01-03 Renesas Technology Corp. Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics
JP2008311673A (en) * 2000-12-08 2008-12-25 Renesas Technology Corp Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
JP2658057B2 (en) 1997-09-30

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