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JPS6489136A - Ion implanting apparatus and ion implanting method - Google Patents

Ion implanting apparatus and ion implanting method

Info

Publication number
JPS6489136A
JPS6489136A JP62244057A JP24405787A JPS6489136A JP S6489136 A JPS6489136 A JP S6489136A JP 62244057 A JP62244057 A JP 62244057A JP 24405787 A JP24405787 A JP 24405787A JP S6489136 A JPS6489136 A JP S6489136A
Authority
JP
Japan
Prior art keywords
ion
implanted
ion implanting
substrate
magnetic fields
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62244057A
Other languages
Japanese (ja)
Inventor
Iwao Higashinakagaha
Kei Kirita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62244057A priority Critical patent/JPS6489136A/en
Publication of JPS6489136A publication Critical patent/JPS6489136A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make it possible to implant impurities to the sides of grooves formed on the surface of a semiconductor substrate or the like by providing magnetic fields between an ion scanning member and the substrate to which the ion is implanted. CONSTITUTION:A substrate 8 to which ion beams are implanted is scanned with the ion beams from an ion source 1 through an ion drawing-out member 2, an ion mass analyzing member 3, an ion accelerating member 4, and an ion scanning member 6, and impurities are implanted. Between the scanning member 5 and the substrate 8, AC magnetic fields 6 and 7 are provided, and the direction of the ion beam is regulated readily by the force in the rectangular direction through the magnetic fields 6 and 7. In such a way, the impurities can be implanted accurately even to the sides of grooves formed on the surface of the semiconductor substrate or the like.
JP62244057A 1987-09-30 1987-09-30 Ion implanting apparatus and ion implanting method Pending JPS6489136A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244057A JPS6489136A (en) 1987-09-30 1987-09-30 Ion implanting apparatus and ion implanting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244057A JPS6489136A (en) 1987-09-30 1987-09-30 Ion implanting apparatus and ion implanting method

Publications (1)

Publication Number Publication Date
JPS6489136A true JPS6489136A (en) 1989-04-03

Family

ID=17113084

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244057A Pending JPS6489136A (en) 1987-09-30 1987-09-30 Ion implanting apparatus and ion implanting method

Country Status (1)

Country Link
JP (1) JPS6489136A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008543027A (en) * 2005-06-07 2008-11-27 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Ion beam angle processing control technology
JP2008546163A (en) * 2005-06-07 2008-12-18 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Ion beam angular spread control technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008543027A (en) * 2005-06-07 2008-11-27 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Ion beam angle processing control technology
JP2008546163A (en) * 2005-06-07 2008-12-18 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド Ion beam angular spread control technology

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