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JPS6029996A - magneto-optical record carrier - Google Patents

magneto-optical record carrier

Info

Publication number
JPS6029996A
JPS6029996A JP13754183A JP13754183A JPS6029996A JP S6029996 A JPS6029996 A JP S6029996A JP 13754183 A JP13754183 A JP 13754183A JP 13754183 A JP13754183 A JP 13754183A JP S6029996 A JPS6029996 A JP S6029996A
Authority
JP
Japan
Prior art keywords
film
garnet
magneto
magnetic
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13754183A
Other languages
Japanese (ja)
Inventor
Shinji Takayama
高山 新司
Ken Sugita
杉田 愃
Toshio Niihara
敏夫 新原
Katsuhiro Kaneko
金子 克弘
Yuzuru Hosoe
譲 細江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP13754183A priority Critical patent/JPS6029996A/en
Publication of JPS6029996A publication Critical patent/JPS6029996A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B11/00Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor
    • G11B11/10Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field
    • G11B11/105Recording on or reproducing from the same record carrier wherein for these two operations the methods are covered by different main groups of groups G11B3/00 - G11B7/00 or by different subgroups of group G11B9/00; Record carriers therefor using recording by magnetic means or other means for magnetisation or demagnetisation of a record carrier, e.g. light induced spin magnetisation; Demagnetisation by thermal or stress means in the presence or not of an orienting magnetic field using a beam of light or a magnetic field for recording by change of magnetisation and a beam of light for reproducing, i.e. magneto-optical, e.g. light-induced thermomagnetic recording, spin magnetisation recording, Kerr or Faraday effect reproducing

Abstract

PURPOSE:To obtain an inexpensive recording carrier with a high S/N ratio and an increment of performance exponent by forming successively a thin film of a garnet compound containing Bi, a vertically magnetized metallic magnetic film and a metallic reflective film as well as a transparent nonmagnetic dielectric film when necessary on a transparent substrate. CONSTITUTION:A garnet thin film 2 containing Bi is formed on the upper surface of a transparent substrate 1 by a sputtering or vapor deposition process, etc. A magnetic thin film 3 whose magnetization facilitating axis is vertical to the film surface is formed on the film 2 by the same process. In addition, a metallic reflective film 4 and a nonmagnetic dielectric film 5 of SiO2 or SiO are formed on the film 3 by the same process. The film 3 uses an Mn or Co crystalline magnetic thin film. For the film 2, an amorphous film of about 0.4mum thickness is formed by a sputtering process with a sintered matter (100mm.phi) of a compound (Bi0.7Y2.3Fe5O12) used as a target. Then an amorphous film 3 of Fe58CO22Tb20 is formed with about 0.04mum thickness as the film 3 by a vacuum vapor deposition process. Then an Al film and SiO2 film are formed with about 0.1mum thickness on the film 3 as films 4 and 5 respectively.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はレーザー光を用いて情報の記録・再生・消去を
行う光磁気記録に係シ、特に性能指数を改善し、S/N
比を向上させた光磁気記録担体に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to magneto-optical recording in which information is recorded, reproduced, and erased using laser light, and in particular improves the figure of merit and improves S/N.
The present invention relates to a magneto-optical recording carrier with improved ratio.

〔蛇明の背景〕[Background of snake light]

情報量の増大、愼器のコンパクト化と伴に記録密度は今
後益々萬密度化の傾向にあシ、高密度・大容量・情厭の
任意読み出し、簀き候え等々が可能な光磁気記録が最近
注目を浴びている。光磁気記録においては、換向と垂直
な方向に磁化容易軸のある磁性薄膜(垂直磁化膜)が用
いられ、光ビームによって任意の位置に反転磁区を作る
ことによって、それらの磁化の向きに対応して′1”。
With the increase in the amount of information and the miniaturization of paper machines, the recording density will tend to increase even further in the future, and magneto-optical recording, which is capable of high-density, large-capacity, arbitrary readout, storage, etc., will become more popular. It has been attracting attention recently. In magneto-optical recording, a magnetic thin film (perpendicular magnetization film) with an axis of easy magnetization perpendicular to the direction of magnetization is used, and by creating reversed magnetic domains at arbitrary positions with a light beam, the direction of magnetization can be matched. Then '1'.

0”の2値情報が記録される。一方、かかる反転配球を
行なった2値信号の読み出しは、通常ポーラ−・カー効
果あるいは7アラデー効果を利用して行なう。
Binary information of 0" is recorded. On the other hand, reading out the binary signal resulting from such inverted pitching is usually carried out using the Polar Kerr effect or the 7 Alladay effect.

従来、これら光磁気記録用磁性薄膜として、MnB1系
結晶負膜、布上婿−遷移金属系非晶買薄換、ガーネット
に代表される化合物単結晶薄膜等の垂直磁化薄膜が提粟
されている。中でも希土類−迩移金属系非晶貞薄膜は、
結晶粒界がないので媒体ノイズが小さく、大面積薄膜作
製が6易でおることから、現在最も有望視されている。
Conventionally, as magnetic thin films for magneto-optical recording, perpendicular magnetization thin films such as MnB1-based crystalline negative films, cloth-transition metal-based amorphous thin films, and compound single-crystal thin films represented by garnet have been proposed. . Among them, rare earth-transfer metal-based amorphous thin films are
Since there are no grain boundaries, medium noise is small, and large-area thin films can be easily produced, so it is currently considered the most promising.

しかしこれら非晶質垂直磁化薄膜から、反射光を利用し
てポーラ−・カー効果によシ情報の絖み出しを行なう方
式においては、膜自体のカー回転角が小さいため、再生
信号レベル(S/N比)が低いという欠点がある。そこ
でこの再生信号レベルを高めるため、7アラデ一回転角
の比較的大きいガーネット系単結晶pg膜、あるいは反
射膜等を垂直磁性薄膜と組み仕わせて多層化することに
よ、!DS/N比向上が試みられている。
However, in the method of ejecting information from these amorphous perpendicularly magnetized thin films by the polar Kerr effect using reflected light, the reproduction signal level (S /N ratio) is low. Therefore, in order to increase the reproduction signal level, a relatively large garnet-based single-crystal PG film with a rotation angle of 7 Arad or a reflective film is combined with a perpendicular magnetic thin film to form a multilayer structure. Attempts are being made to improve the DS/N ratio.

しかし、ガーネット系単結晶薄層と非晶質磁性薄膜の多
層膜では、カー回転角は約1.5倍に増力Uするが膜か
らの反射率が、非晶質磁性薄膜単独の場合と比べて約半
分に減するため、S/N比の大きな増加が得られず、ま
た単結晶薄膜を用いるため高価であ多いまた大面積化が
困難である。一方、反射膜を非晶質磁性薄膜に設けた多
層膜でもS/N比は約1.2倍程匿に増加するのみであ
る。
However, in a multilayer film consisting of a garnet single crystal thin layer and an amorphous magnetic thin film, the Kerr rotation angle is increased by about 1.5 times, but the reflectance from the film is lower than that of the amorphous magnetic thin film alone. Since the S/N ratio is reduced by about half, a large increase in the S/N ratio cannot be obtained, and since a single crystal thin film is used, it is expensive and difficult to increase in area. On the other hand, even in the case of a multilayer film in which a reflective film is provided on an amorphous magnetic thin film, the S/N ratio only increases modestly by about 1.2 times.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、θr/αで表わされる性能指数の大き
い(ここでθFは7アラデ一回転角、αは吸収係e)、
保磁力が小さい、磁化曲線の角型比の高いBi元累全含
有するガーネット系化合物のスパッタ膜あるいは蒸着膜
を垂直磁化膜の上あるいは下に配設し、さらに金属反射
膜、非磁性d゛亀体膜を備えた多層膜を形成することに
よシ、光磁気記録媒体の性能指数71・θK(ここでR
は反射率、θにはカー回転角を表わす)を増加させ、実
用に十分逸した8/N比が得られる安価な光磁気配録担
体を提供することにある。
The purpose of the present invention is to have a large figure of merit expressed by θr/α (where θF is the rotation angle of 7 degrees and α is the absorption coefficient e),
A sputtered or vapor-deposited film of a garnet-based compound containing Bi elements with a low coercive force and a high squareness ratio of the magnetization curve is disposed on or below the perpendicular magnetization film, and a metal reflective film and a non-magnetic d By forming a multilayer film with a turtle film, the figure of merit of the magneto-optical recording medium is 71·θK (here R
The object of the present invention is to provide an inexpensive magneto-optical recording carrier that can increase the reflectance and θ represents the Kerr rotation angle and obtain an 8/N ratio that is insufficient for practical use.

〔発明の概要〕[Summary of the invention]

磁性ガーネットが強磁性金属や合金に比べて、著しく光
に透明であシ、しかもファラデー効果が比較的大きいこ
とはよく知られている。特にBlを含む磁性ガーネット
は、Bi無添加のそれと比べて可視から近赤外光波長領
域まで性能指数(θF/α)が著しく大きくなシ、光応
用素子材料として優れた性質をもっている。
It is well known that magnetic garnet is significantly less transparent to light than ferromagnetic metals and alloys, and has a relatively large Faraday effect. In particular, magnetic garnet containing Bl has a significantly larger figure of merit (θF/α) in the visible to near-infrared wavelength range than that without Bi additives, and has excellent properties as a material for optical application devices.

本発明者等はこの光応用素子材料として優れた性質をも
つBiを含む磁性ガーネット系の博t&をスパッタ法あ
るいは蒸着法で作製することによυ大面積化を行ない、
垂直磁化金属磁性薄膜の片側に配設することによシ、そ
の記録情報を磁気転写させてカー効果のエンハンストを
図シ、磁性ガーネット系薄膜を設けたことによる反射率
の低下を、垂直磁性薄膜のもう一方の片側に金属反射膜
を設けて防ぎ、同時に反射膜による反射光が垂直磁性薄
膜とガーネット系薄膜を通過することによシさらにカー
回転角が増大する仁とを考案し、本発明に至った。また
この多層膜の反射膜上あるいはガーネット系薄膜上にS
iO2あるいはSiO等の非磁性訪亀体換を設けること
により、酸化防止効果あるいは誘電体膜内の多室反射に
よシカ−効果のエンハンストをさらに上げることも見い
出した。本発明の多層編構造において、金属磁性薄膜を
透過した光の反射膜での反射光によるカー効果のエンハ
ンスト、及び多層膜の反射率の増大効果をより有利にす
るためには、垂直磁化金属磁性薄膜の厚さを、連続均質
膜作製が比軟的容易な厚さ以上で、レーザー光が透過可
能な厚さ以下にすることが望ましく、そのために膜厚を
80−1500人にするのが望ましい。まtcBiを含
むガーネット糸洛膜が垂直磁化金属磁性薄膜に記録され
た情報を正確に磁気転写するためには、該ガーネット族
の保磁力Haが小で、残留磁化が大きく、角型比が大で
あることが望ましい。また垂直磁化金属磁性薄膜の記録
情報を正確に磁気転写し、さらに磁気光学効果による再
生ノイズを低くするためには、よシ好ましくはガーネッ
ト系化合物のスパッタ膜あるいは蒸着膜は非晶′X構造
であることが望ましい。
The present inventors fabricated a magnetic garnet-based material containing Bi, which has excellent properties as a material for optical application devices, by sputtering or vapor deposition to increase the area of υ.
By disposing it on one side of the perpendicularly magnetized metal magnetic thin film, the recorded information can be magnetically transferred and the Kerr effect can be enhanced. A metal reflective film is provided on the other side to prevent this, and at the same time, the reflected light from the reflective film passes through a perpendicular magnetic thin film and a garnet-based thin film, thereby further increasing the Kerr rotation angle. reached. Also, S on the reflective film of this multilayer film or on the garnet-based thin film.
It has also been found that by providing a non-magnetic visiting material such as iO2 or SiO, the oxidation prevention effect or multichamber reflection within the dielectric film can further enhance the deer effect. In the multilayer structure of the present invention, in order to enhance the Kerr effect due to the light reflected by the reflective film after passing through the metal magnetic thin film, and to make the effect of increasing the reflectance of the multilayer film more advantageous, it is necessary to use a perpendicularly magnetized metal magnetic thin film. It is desirable that the thickness of the thin film be at least a thickness that makes it relatively easy to fabricate a continuous homogeneous film, but not more than a thickness that allows laser light to pass through.For this purpose, it is desirable that the film thickness be 80-1500 mm. . In order for the garnet thread film containing MatcBi to accurately magnetically transfer the information recorded on the perpendicularly magnetized metal magnetic thin film, the garnet family must have a small coercive force Ha, a large residual magnetization, and a large squareness ratio. It is desirable that In addition, in order to accurately magnetically transfer the recorded information on the perpendicularly magnetized metal magnetic thin film and to further reduce reproduction noise due to the magneto-optic effect, it is preferable that the sputtered or vapor-deposited film of the garnet-based compound has an amorphous 'X structure. It is desirable that there be.

〔発明の実施例〕[Embodiments of the invention]

以下兼通例によシ本発明の詳細な説明する。 The present invention will now be described in detail as usual.

第1図に本発明の一実施例を示す記録担体の断面図を示
す。透明なガラスあるいは合成高分子樹脂等の基板(1
)の上面にBi金含有ガーネット系薄膜(2)を、スパ
ッタリング法あるいは蒸着法等で形成し、該ガーネット
系薄膜(2)の上面に、磁化容易軸が膜面に垂直な磁性
薄膜(3)をスパッタリング法あるいは蒸着法で形成し
、然る後に同様の方法で彊属反射膜+4)、SiOxあ
るいはSiOの非磁性誘電体膜(5)を形成させる。こ
こで垂直磁化薄膜(3)とにはMn系あるいはCo系結
晶質磁性#l膜、あるいはR,E−TM系系非晶質磁性
模膜ここで几EはGd、Tb、Dyt TMはFe、C
oから選ばれた少なくとも一つ以上の元素から成る)で
おれば良い。例えばガーネット系薄膜(2)として、厚
さ約0.4μmO該非晶負膜を布上o、yY2.5Fe
sOtz化合物の焼結体(径100■φ)をターゲット
として用いてスパッタリング法で作製し、然る後真空蒸
庸法で垂直磁化膜として、厚さ約0.04μmのFe、
CoHTbxrの非晶買換(3)を作製し、該peCo
Tb非晶5jL換上に反射膜(4八非磁性膜(5)とし
て約0.1μmのAt膜とSiChmをそれぞれ形成さ
せた。この場合ガラス基板からのHe−Neレーザー光
による該記録媒体の性能指数vTt・θには約0.5で
、その再生S/N比は約50dBと従来の光磁気記録媒
体と比べて約10dB向上した。
FIG. 1 shows a sectional view of a record carrier showing an embodiment of the present invention. A substrate made of transparent glass or synthetic polymer resin (1
A garnet-based thin film (2) containing Bi gold is formed on the upper surface of the garnet-based thin film (2) by sputtering or vapor deposition, and a magnetic thin film (3) whose axis of easy magnetization is perpendicular to the film surface is formed on the upper surface of the garnet-based thin film (2). is formed by sputtering or vapor deposition, and then a metal reflective film (4) and a nonmagnetic dielectric film (5) of SiOx or SiO are formed by the same method. Here, the perpendicular magnetization thin film (3) is a Mn-based or Co-based crystalline magnetic #l film, or an R,E-TM-based amorphous magnetic film, where E is Gd, Tb, and Dyt TM is Fe. , C
o). For example, as a garnet-based thin film (2), the amorphous negative film with a thickness of about 0.4 μm is coated on a cloth with o, yY2.5Fe.
A sOtz compound sintered body (diameter 100 mm) was used as a target to produce a perpendicularly magnetized film using a sputtering method, and then a perpendicularly magnetized film with a thickness of approximately 0.04 μm.
Amorphous replacement (3) of CoHTbxr was produced, and the peCo
An At film of approximately 0.1 μm and a SiChm film were respectively formed as a reflective film (48 nonmagnetic film (5)) on a Tb amorphous 5JL substrate. The figure of merit vTt·θ is about 0.5, and the reproduction S/N ratio is about 50 dB, which is about 10 dB better than the conventional magneto-optical recording medium.

第2図は他の実施例を示す配録担体の断面図であシ、透
明なガラスあるいは合成高分子樹脂等の基板fl)の上
面にAt、Ag、Mg等の金属反射膜(4)をスパッタ
法あるいは蒸着法で形成し、更に該金橋反射膜上にスパ
ッタ法あるいは蒸着法で非晶質あるいは結晶質垂直磁化
膜(3)を形成させ、その垂直磁化膜(3)の上面にB
i金含有ガーネット系化合物のスパッタ膜あるいは蒸着
膜(2)全配設したものでるる。例えばガーネット系薄
膜(2)として、厚さ約0.2μmのスパッタ非晶質膜
をGd2 B ! tF esO1tガーネット焼結体
をスパッタリングすることによシ作製し、当直磁化膜(
3)として、厚さ約0.03μmのFe12Tb211
非晶質磁性膜をスパッタ法で形成して、該垂直磁化膜(
5)の下面に厚さ約0.1μmのMg蒸宥腺を形成させ
た場合、ガーネット膜(2)側から偏光)1 e −N
 eレーザビームを照射し、前記非晶質垂直磁化膜(3
ンを通過し、反射膜(4)で反射され、再度非晶質垂直
磁化膜(3)とガーネット膜(2)を通過することによ
り生じる偏光面の回転角が、非晶質垂直磁化膜だけによ
るカー効果による回転角よりも約3倍大きくなシ、その
結果再生8/N比も第1図の多層膜と同様約10dB向
上した。
FIG. 2 is a sectional view of a recording carrier showing another embodiment, in which a metal reflective film (4) of At, Ag, Mg, etc. is coated on the top surface of a substrate (fl) made of transparent glass or synthetic polymer resin. An amorphous or crystalline perpendicularly magnetized film (3) is formed on the gold bridge reflective film by a sputtering method or a vapor deposition method.
(i) A sputtered film or vapor deposited film (2) of a gold-containing garnet compound is entirely provided. For example, as the garnet-based thin film (2), a sputtered amorphous film with a thickness of about 0.2 μm is used as Gd2B! The on-duty magnetized film (
3), Fe12Tb211 with a thickness of about 0.03 μm
An amorphous magnetic film is formed by sputtering, and the perpendicularly magnetized film (
5) When a Mg evaporation gland with a thickness of about 0.1 μm is formed on the lower surface, polarized light from the garnet film (2) side) 1 e −N
The amorphous perpendicularly magnetized film (3
The angle of rotation of the plane of polarization caused by passing through the amorphous perpendicular magnetization film (3) and the garnet film (2) is the same as that of the amorphous perpendicular magnetization film. As a result, the reproduction 8/N ratio was improved by about 10 dB, similar to the multilayer film shown in FIG. 1.

第3図、第4図は記録担体の上下両面からポーラ−・カ
ー効果方式によ多情報の記録・再生を行なうことができ
、記録’G11tを倍増したものの断面図でおる。第3
図では反射膜(4)の上下両面に垂直磁化膜の金属磁性
膜(3)、(3)を配置し、更に該谷金属磁性#(3)
、(3)の上面にスパッタリング法によシ作製したBi
含有ガーネット系薄膜(2)、(2)を形成し、更には
該ガーネット系薄膜(2)、(2)上に透明ガラスある
いは透明合成高分子樹脂膜を夫々配設している。また第
4図では8jOxあるいはSiO等の非磁性誘電体膜(
5)上に金属反射膜(4)、(4)を形成し、史に該谷
反射編上に垂直磁化膜(3)、(3)を形成し、更には
該各金属輯性膜(3J、+3)上向にスパッタリング法
あるいは蒸着法によシ作製したBi含有ガーネット系薄
膜+2)、+2)を形成し、該ガーネット膜(2)、(
2)上に透明ガラスあるいは透明合成高分子樹脂膜を夫
々配設している。上記第3図、第4図の記録担体は本質
的には前記第1図、第4図に記載した記録媒体を、各膜
層が中心N膜に対して対称になるように重ね合わせたも
のであシ、そのため各中心層の反射膜層(4)内あるい
は非磁性膜層(5)内に樹脂接着層があっても上記と同
様の効果が得られる。
FIGS. 3 and 4 are cross-sectional views of a record carrier in which a large amount of information can be recorded and reproduced from both the upper and lower surfaces using the Polar Kerr effect method, and the recording 'G11t is doubled. Third
In the figure, perpendicularly magnetized metal magnetic films (3), (3) are arranged on both the upper and lower surfaces of the reflective film (4), and the metal magnetic films #(3) in the valley are further arranged.
, (3) Bi fabricated by sputtering method on the top surface of (3)
Garnet-containing thin films (2), (2) are formed, and transparent glass or transparent synthetic polymer resin films are disposed on the garnet-based thin films (2), (2), respectively. In addition, in Fig. 4, a non-magnetic dielectric film such as 8jOx or SiO (
5) Form metal reflective films (4), (4) thereon, form perpendicularly magnetized films (3), (3) on the valley reflection film, and further form each of the metal magnetic films (3J , +3) A Bi-containing garnet thin film +2), +2) prepared by sputtering or vapor deposition is formed upward, and the garnet film (2), (
2) A transparent glass or a transparent synthetic polymer resin film is disposed thereon. The record carriers shown in FIGS. 3 and 4 above are essentially the recording media shown in FIGS. 1 and 4 above stacked so that each film layer is symmetrical with respect to the center N film. Therefore, even if there is a resin adhesive layer in the reflective film layer (4) or the nonmagnetic film layer (5) of each central layer, the same effect as described above can be obtained.

第5図は前記第3図、第4図で作製した記録媒体の各中
心層の反射層層内おるいは非磁性層内に空気層(6)を
該基板外周にスペーサーを入れることによシ設け、片側
の垂直磁化膜のもれ磁界が他方の垂直磁化膜の磁化の状
態に影響を与えないようにしたことを特徴としている。
FIG. 5 shows that an air layer (6) is formed in the reflective layer or nonmagnetic layer of each central layer of the recording medium produced in FIGS. 3 and 4 above by inserting a spacer around the outer periphery of the substrate. It is characterized in that the leakage magnetic field of one perpendicularly magnetized film does not affect the magnetization state of the other perpendicularly magnetized film.

第5図の多ノー膜構造は特に保磁力の比較的小さい垂直
磁化膜を記録膜として用いた時に有効である。第5図で
(6)は窒気層(4)、(4)は反射膜、(3)、(3
)は膜に垂直に容易軸を有する金属磁性膜、+2)、(
2)はスパッタリング法あるいは蒸着法によシ作製した
Bi含有ガーネット系薄膜、(1)、(1)は透明基板
を示す。
The multilayer film structure shown in FIG. 5 is particularly effective when a perpendicularly magnetized film having a relatively small coercive force is used as a recording film. In Figure 5, (6) is the nitrogen layer (4), (4) is the reflective film, (3), (3
) is a metallic magnetic film with an easy axis perpendicular to the film, +2), (
2) shows a Bi-containing garnet thin film produced by sputtering or vapor deposition, and (1) and (1) show transparent substrates.

〔発明の効果〕〔Effect of the invention〕

以上の説明から明らかなように、本発明の光磁気記録担
体は、本質的にはスパッタ法、蒸着法により垂直磁化膜
の片側の面上に金属反射膜を他方の片側の面上に13i
を含むガーネット系薄膜を形成してなることを特徴とし
ておシ、偏光ビームガーネット展側から入射した時、記
録担体の反射率を低下させずに、スパッタ法あるいは蒸
N法で作製した磁気光学効果の大きいJ3iを含むガー
ネット系薄膜で、カー回転角が強調され、記録担体の性
能指数VK・θXを向上し、再生S/N比を増大するの
に著しい効果があることがわかった。なお本発明の多)
@膜構造では13iを含むガーネット膜の代わりに磁気
光学効果の大きい透明磁性膜を用いても同じ効果を発揮
できることは明らかである。また透明基板上にスパッタ
法、蒸着法によシ形成したガーネット膜を熱処理するこ
とによシ、ガーネット膜の特性を段適化することも出来
る。
As is clear from the above description, the magneto-optical recording carrier of the present invention essentially consists of a metal reflective film formed on one side of a perpendicularly magnetized film by a sputtering method or an evaporation method.
It is characterized by forming a garnet-based thin film containing It was found that the garnet-based thin film containing J3i with a large J3i emphasizes the Kerr rotation angle, improves the figure of merit VK/θX of the record carrier, and has a remarkable effect on increasing the reproduction S/N ratio. In addition, many of the present invention)
It is clear that in the @ film structure, the same effect can be achieved even if a transparent magnetic film with a large magneto-optic effect is used instead of the 13i-containing garnet film. Further, by heat treating a garnet film formed on a transparent substrate by sputtering or vapor deposition, the characteristics of the garnet film can be optimized.

【図面の簡単な説明】[Brief explanation of drawings]

第1図乃至第5図は夫々いずれも本発明の実厖例におけ
る光磁気記録担体を示す断面図である。 1・・・透明基板、2・・・Biを含むガーネット系薄
膜、3・・・垂直磁化膜、4・・・反射膜、5・・・非
磁性族、6第 1 (2) 第 4 図 第1頁の続き 0発 明 者 細 江 譲 国分寺市東恋ケ窪央研究所
1 to 5 are sectional views showing magneto-optical recording carriers in practical examples of the present invention. DESCRIPTION OF SYMBOLS 1... Transparent substrate, 2... Garnet-based thin film containing Bi, 3... Perpendicular magnetization film, 4... Reflective film, 5... Non-magnetic group, 6th 1st (2) Fig. 4 Continued from page 1 0 Inventor Yuzuru Hosoe Kokubunji City Higashi Koigakubo Research Institute

Claims (1)

【特許請求の範囲】 1、透明な基板上に、Biを含有するガーネット系化合
物のスパッタ膜あるいは蒸着膜を配設し、該薄膜の上面
に膜面に垂直な方向に磁化容易軸を有する金属磁性膜を
備え、該金属磁性層の上面に金属反射族を設け、該反射
膜上に必要に応じて透明非磁性誘電体膜を順次形成した
ことを特徴とする光磁気記録担体。 2、透明な基板上に金属反射膜を設け、該金属反射膜上
に、膜面に垂直な方向に磁化容易軸を有する金属磁性層
を配設し、該金属磁性層の上面にBiを含有するガーネ
ット系化合物のスパッタ膜あるいは蒸着膜を配設し、心
安に応じて非磁性防電体膜を順次形成したことを特徴と
する光磁気記録担体。 3、特許請求の範囲第1項記載の光磁気記録担体におい
て、該記録担体の基板側が最外部になるようにお互に近
接あるいは密着配置したことを特徴とする光磁気記録担
体。 4、%許請求のk11111第1項乃至第3項のいずれ
かの項に記載の光磁気記録担体において、該ガーネット
系化合物のスパッタ族あるいは蒸着膜が優位的に非晶質
化していることを%徴とする光磁気記録担体。
[Claims] 1. A sputtered or vapor-deposited film of a garnet-based compound containing Bi is provided on a transparent substrate, and a metal having an axis of easy magnetization in the direction perpendicular to the film surface is formed on the upper surface of the thin film. 1. A magneto-optical recording carrier comprising a magnetic film, a metal reflective layer provided on the upper surface of the metal magnetic layer, and a transparent non-magnetic dielectric film sequentially formed on the reflective film as required. 2. A metal reflective film is provided on a transparent substrate, a metal magnetic layer having an axis of easy magnetization in a direction perpendicular to the film surface is provided on the metal reflective film, and the upper surface of the metal magnetic layer contains Bi. 1. A magneto-optical recording carrier characterized in that a sputtered film or a vapor-deposited film of a garnet-based compound is disposed thereon, and a non-magnetic electrically shielding film is sequentially formed according to the need for peace of mind. 3. A magneto-optical record carrier according to claim 1, characterized in that the record carriers are arranged close to each other or in close contact with each other so that the substrate side of the record carrier is the outermost side. 4. In the magneto-optical recording carrier according to any one of Items 1 to 3 of K11111, the sputtered or vapor-deposited film of the garnet-based compound is predominantly amorphous. Magneto-optical recording carrier with % characteristics.
JP13754183A 1983-07-29 1983-07-29 magneto-optical record carrier Pending JPS6029996A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13754183A JPS6029996A (en) 1983-07-29 1983-07-29 magneto-optical record carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13754183A JPS6029996A (en) 1983-07-29 1983-07-29 magneto-optical record carrier

Publications (1)

Publication Number Publication Date
JPS6029996A true JPS6029996A (en) 1985-02-15

Family

ID=15201094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13754183A Pending JPS6029996A (en) 1983-07-29 1983-07-29 magneto-optical record carrier

Country Status (1)

Country Link
JP (1) JPS6029996A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316624U (en) * 1986-07-17 1988-02-03
US5932139A (en) * 1994-03-17 1999-08-03 Hitachi Maxell, Ltd. Fluorescent substance, fluorescent composition, fluorescent mark carrier and optical reader thereof
US7726792B2 (en) 2004-12-09 2010-06-01 Canon Kabushiki Kaisha Ink tank for liquid printing apparatus, method of manufacturing same, liquid printing apparatus with same, and method of detecting remaining ink

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6316624U (en) * 1986-07-17 1988-02-03
US5932139A (en) * 1994-03-17 1999-08-03 Hitachi Maxell, Ltd. Fluorescent substance, fluorescent composition, fluorescent mark carrier and optical reader thereof
US6303929B1 (en) 1994-03-17 2001-10-16 Hitachi Maxell, Ltd. Fluorescent substance, fluorescent composition, fluorescent mark carrier and optical reader therefor
US6436314B1 (en) 1994-03-17 2002-08-20 Hitachi Maxell, Ltd. Particulate fluorescent substance
US6458294B2 (en) 1994-03-17 2002-10-01 Hitachi Maxell, Ltd. Fluorescent ink compositions
US6471887B2 (en) 1994-03-17 2002-10-29 Hitachi Maxell, Ltd. Neodymium, ytterbium and/or erbium containing organic fluorescent compositions
US6688789B2 (en) 1994-03-17 2004-02-10 Hitachi Maxell, Ltd. Fluorescent substance, fluorescent composition, fluorescent mark carrier and optical reader therefor
US7726792B2 (en) 2004-12-09 2010-06-01 Canon Kabushiki Kaisha Ink tank for liquid printing apparatus, method of manufacturing same, liquid printing apparatus with same, and method of detecting remaining ink
US8240826B2 (en) 2004-12-09 2012-08-14 Canon Kabushiki Kaisha Ink tank for liquid printing apparatus, method of manufacturing same, liquid printing apparatus with same, and method of detecting remaining ink

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