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JPS61236117A - Pattern position detecting method - Google Patents

Pattern position detecting method

Info

Publication number
JPS61236117A
JPS61236117A JP60076381A JP7638185A JPS61236117A JP S61236117 A JPS61236117 A JP S61236117A JP 60076381 A JP60076381 A JP 60076381A JP 7638185 A JP7638185 A JP 7638185A JP S61236117 A JPS61236117 A JP S61236117A
Authority
JP
Japan
Prior art keywords
waveform
alignment mark
wafer
detected
pattern matching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60076381A
Other languages
Japanese (ja)
Inventor
Yoshihiro Yoneyama
米山 義弘
Tomohiro Kuji
久迩 朝宏
Yukio Kenbo
行雄 見坊
Akira Inagaki
晃 稲垣
Minoru Ikeda
稔 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60076381A priority Critical patent/JPS61236117A/en
Publication of JPS61236117A publication Critical patent/JPS61236117A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enable to easily recognize the position of an alignment mark in a highly precise manner from the detected waveform of the alignment mark with a simple process by a method wherein a symmetry pattern matching is performed on the differential waveform of the detected waveform. CONSTITUTION:The alignment mark 2 inscribed on a wafer 1 and the alignment mark 4 on a mask 3, which is opposing to the wafer 1 across a gap (g) of several tens mum, are detected by a detecting optical system 5. The light reflected from the surfaces of the mask 3 and the wafer 1 is divided into two parts by a beam splitter 9, one beam is magnified by a relay lens 11, condensed by a cylinder lens 12 and forms an image on a linear sensor 13. When the detected waveform is differentiated, the value of the flat part of the waveform is reduced to almost zero, the waveform is greatly changed at the position of the alignment 2, and the result of differentiation is substantially changed. When a symmetry pattern matching treatment is performed on the differentiated waveform, the position (nc) of the alighment mark shows the maximum value, thereby enabling to easily recognize the position of the alignment mark.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明はウニ・・上に回路パターンを焼付ける露光装置
において6マスクやウエノ翫上のアライメントマークを
検出し、その位置を求める方法に関するものである。
[Detailed Description of the Invention] [Field of Application of the Invention] The present invention relates to a method for detecting alignment marks on a 6-mask or a wafer and determining their positions in an exposure device that prints a circuit pattern on a sea urchin. be.

〔発明の背景〕[Background of the invention]

特公昭56−2284号に記載されているように。 As described in Japanese Patent Publication No. 56-2284.

従来の対称性パターンマツチング方法による検出波形の
計算処理結果の一例を第3図に示す。
FIG. 3 shows an example of a calculation result of a detected waveform by the conventional symmetric pattern matching method.

第3図囚は撮像装置で撮像して検出される検出波形をそ
のまま示したもので、■に示す位置にアライメントマー
クが表れている。
FIG. 3 shows the detected waveform detected by imaging with the imaging device as it is, and the alignment mark appears at the position shown in ■.

筺3図(B)は、 第311iSI(Alの検出波形を
対称性パターンマツチング計算処理した結果を示したも
のである。対称性パターンマツチングでアライメントマ
ークの中心位置を求める方法では、その計算値が最小と
なる位置をアライメントマークの位置と定めている。し
かし、対称性パターンマツチングで、この値が小さくな
る個所は、第3図(B)に示す様に、波形の平坦部分で
ある両端部分OOと、アライメントマークの中心部分O
03ケ所に表れるので。アライメントマークの位置を認
識出来ない。
Figure 3 (B) shows the result of symmetric pattern matching calculation processing of the detected waveform of 311iSI (Al). The position where the value is minimum is determined as the position of the alignment mark. However, in symmetric pattern matching, the place where this value becomes small is the flat part of the waveform, as shown in Figure 3 (B). Both end parts OO and center part O of the alignment mark
It appears in 03 places. Unable to recognize alignment mark position.

このため対称性パターンマツチングでは、その計算範囲
なアライメントマーク附近に設定して行うことによって
、アライメントマーク位置を認識していた。従って、計
算範囲を限定するための前処理が必要となり、処理が複
雑でしかも時間がかかつていた。
For this reason, in symmetric pattern matching, the alignment mark position has been recognized by setting it near the alignment mark within the calculation range. Therefore, preprocessing is required to limit the calculation range, making the processing complex and time consuming.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、アライメントマークの検出波形から、
アライメントマークの位置を高精度に、しかも簡単な処
理で容易に認識することが出来るようにしたパターンの
位置検出方法を提供することにある。
The purpose of the present invention is to
To provide a pattern position detection method that allows the position of an alignment mark to be easily recognized with high precision and simple processing.

〔発明の概要〕[Summary of the invention]

本発明の概要は検出波形を微分したことにある。  ゛ 検出波形を微分すると、その処理結果は、検出波形がほ
ぼ平坦な部分では0となり。アライメントマークを検出
している波形が大きく変化している部分では微分結果も
犬とな値な示し。
The gist of the present invention is that the detected waveform is differentiated.゛When the detected waveform is differentiated, the processing result becomes 0 in the portion where the detected waveform is almost flat. In areas where the waveform that detects the alignment mark changes significantly, the differential results also show significant values.

しかもほぼ対称な検出波形は逆対称な波形となる。Moreover, the almost symmetrical detected waveform becomes an antisymmetrical waveform.

この微分波形を対称性パターンマツチング処理を行うと
、アライメントマークを検出している波形部分のみが大
きな値を示し、対称性パターンマツチング結果の最大値
を示す位置がアライメントマークの位置となるのを、正
しい認識を行うことが出来る。
When this differential waveform is subjected to symmetric pattern matching processing, only the part of the waveform where the alignment mark is detected will show a large value, and the position showing the maximum value of the symmetric pattern matching result will be the position of the alignment mark. can be recognized correctly.

〔発明の実施例〕[Embodiments of the invention]

以下1本発明の実施例を第1図及び第2図により具体的
に説明する。
Hereinafter, one embodiment of the present invention will be specifically explained with reference to FIGS. 1 and 2.

第1図(至)はX線露光装置のマスクとウェハのアライ
メントマークを検出する光学系の一実施例を示したもの
で、ウェハl上に刻印されたアライメントマーク2とウ
ェハ1と数十μmの間隙(!1)で対向したマスク3上
のアライメントマーク4を検出光学系5で検出する。検
出光学系5の構成は、光ファイバー6からの照明光は光
学系7IICより集光されビームスプリッタ8を通って
対物レンズ9に入光する。対物レンズ9からに照明光は
マスク3面、ウエノ・1面に照射される。
Figure 1 (to) shows an example of an optical system for detecting alignment marks between a mask and a wafer of an X-ray exposure device, and shows alignment marks 2 and wafer 1 engraved on wafer 1, several tens of μm apart. The detection optical system 5 detects alignment marks 4 on the mask 3 facing each other with a gap (!1). In the configuration of the detection optical system 5, illumination light from an optical fiber 6 is collected by an optical system 7IIC, passes through a beam splitter 8, and enters an objective lens 9. Illumination light from the objective lens 9 is applied to three mask surfaces and one Ueno surface.

マスク3面、ウエノ・1面から反射した光はそれぞれの
アライメントマーク2.3の情報を含んでいる。この光
は再び対物レンズ9を通りピームスブ11ツタ8を通過
して、ビームスプリッタ9により2分割され、一方は目
視用のTVカメラ上に結像する。他の一方の光はリレー
レンズ11により拡大され、さらにシリンタレンズ12
により集光されリニアセンサ上に結像する。
The light reflected from the 3rd mask surface and the 1st mask surface contains information on each alignment mark 2.3. This light passes through the objective lens 9 again, passes through the beam sub 11 and the beam 8, and is split into two parts by the beam splitter 9, one of which is imaged on a TV camera for visual viewing. The other light is magnified by a relay lens 11, and further by a cylindrical lens 12.
The light is focused and imaged onto the linear sensor.

第1図(B)はマスクlとウェハ3上のアライメントマ
ーク2,4の配置を示したもので、第1図(C)はリニ
アセンサ13上に結像したアライメントマーク2.4の
信号強度な示したものである。
FIG. 1(B) shows the arrangement of the alignment marks 2 and 4 on the mask l and the wafer 3, and FIG. 1(C) shows the signal intensity of the alignment marks 2 and 4 imaged on the linear sensor 13. This is what was shown.

両端の2個が凸部分がマスク30アライメントマーク4
の検出波形を示したもので、中央の凹波形がウェハ1の
アライメントマーク2の検出波形を示したものである。
The two convex parts on both ends are the mask 30 alignment mark 4
The concave waveform in the center is the detected waveform of the alignment mark 2 on the wafer 1.

第2図は、従来例でも示した様に上記第1図(0に示し
た検出波形を従来法だよる処理を行つた結果の1例を示
したものである。
As shown in the conventional example, FIG. 2 shows an example of the result of processing the detected waveform shown in FIG. 1 (0) using the conventional method.

第2図は今回発明した方法によって処理した結果を示し
たものである。第2図(A>は、第1図(Qの検出波形
からウェハ1のアライメントマーク2部分な抽出I−で
表したものである。第2図(13)は、第2図囚の検出
波形を微分(信号波形の差分を取ったもの)したもので
ある。微分を行うと波形が平坦な部分は値がほぼOとな
り、フライメントマーク2位置では波形が大きく変化し
ているので、微分結果も大きく変化する。また、概要で
も述べた様にほぼ対称形の検出波形は、微分することに
よってほぼ逆対称な形状になる。
FIG. 2 shows the results of processing using the method invented this time. Figure 2 (A> is a partial extraction of the alignment mark 2 on wafer 1 from the detected waveform in Figure 1 (Q). Figure 2 (13) is the detected waveform in Figure 2). (takes the difference between the signal waveforms). When differentiated, the value is almost O in the flat part of the waveform, and the waveform changes greatly at the flyment mark 2 position, so the differential result is Also, as mentioned in the overview, a substantially symmetrical detected waveform becomes a substantially antisymmetrical shape by being differentiated.

第2図(qは、上記した微分波形を対称性パターンマツ
チング処理した結果を示したものである。
FIG. 2 (q shows the result of symmetric pattern matching processing of the differential waveform described above).

対称性パターンマツチング(Z (rL) )は1次に
ここで Z(ル):対称性パターンマツチング結果D(rL):
微分波形の値 P :対称性を比較する範囲 第2図(C)に示される様に微分した波形に対して対称
性ハjj−ノマッチング処理を行うと2アライメントマ
ークの位置時が最大値を示すので容易にアライメントマ
ーク位置を認識することが出来る。
The symmetry pattern matching (Z(rL)) is first-order where Z(r): Symmetry pattern matching result D(rL):
Value P of differential waveform: Range for comparing symmetry As shown in Figure 2 (C), when the symmetry matching process is performed on the differentiated waveform, the maximum value is obtained at the position of the 2 alignment marks. The position of the alignment mark can be easily recognized.

なお対称性パターンマツチング(Z(rL))トシても
多°少精度は落ちるけれども、十分アライメントマーク
位置を検出することができる。
Note that even if symmetrical pattern matching (Z(rL)) is used, the alignment mark position can be detected sufficiently, although the accuracy will drop to some extent.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明によれば、簡単な処理でもっ
てアライメントマーク位置を正確に。
As explained above, according to the present invention, alignment mark positions can be accurately determined with simple processing.

且つ高速で求めることが出来る効果を奏する。Moreover, it has the effect of being able to obtain the results at high speed.

【図面の簡単な説明】[Brief explanation of drawings]

第11%(A)は本発明に係るxijg光装曾に使用し
た場合のマスクとウェハのアライメントマークを検出す
る光学系を示す斜視図、第1図(B)は第1図囚に示す
アライメントマークを重畳した状態を示した図、第1図
(qはリニアセンサで撮像される映倫信号波形を示す図
、第2図囚、(Bl。 (Qは本発明のパターン位置検出方法の一実施例を示す
図、第3図囚、 +13は従来のパターマツチング処理
方法な示す図である。 1・・・ウェハ、     2・・・マスク。 9・・・対物レンズ、    13・・・リニアセンサ
11% (A) is a perspective view showing the optical system for detecting alignment marks on the mask and wafer when used in the xijg optical system according to the present invention, and FIG. 1(B) is the alignment shown in FIG. Figure 1 shows a state in which marks are superimposed; A diagram showing an example, Figure 3, +13 is a diagram showing a conventional pattern matching processing method. 1... Wafer, 2... Mask. 9... Objective lens, 13... Linear sensor. .

Claims (1)

【特許請求の範囲】 1、パターンを撮像装置で撮像して得られる映像信号を
ディジタル信号に変換し、この得られたディジタル信号
を微分し、この微分された信号について対称性パターン
マッチング処理を行い、その処理結果が最大となる位置
をパターン位置と認識することを特徴とするパターン位
置検出方法。 2、パターンマッチング処理を ▲数式、化学式、表等があります▼ 又は▲数式、化学式、表等があります▼ ここで〔但し、D(n)は微分値、Pは比較範囲、nは
位置を示す。〕で行うことを特徴とする特許請求の範囲
第1項記載のパターン位置検出方法。
[Claims] 1. A video signal obtained by imaging a pattern with an imaging device is converted into a digital signal, the obtained digital signal is differentiated, and a symmetric pattern matching process is performed on the differentiated signal. , a pattern position detection method characterized in that the position where the processing result is maximum is recognized as the pattern position. 2. Pattern matching processing ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ or ▲ There are mathematical formulas, chemical formulas, tables, etc. ▼ Here [where, D(n) is the differential value, P is the comparison range, and n is the position . ] The pattern position detection method according to claim 1, characterized in that the pattern position detection method is carried out in the following steps.
JP60076381A 1985-04-12 1985-04-12 Pattern position detecting method Pending JPS61236117A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60076381A JPS61236117A (en) 1985-04-12 1985-04-12 Pattern position detecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60076381A JPS61236117A (en) 1985-04-12 1985-04-12 Pattern position detecting method

Publications (1)

Publication Number Publication Date
JPS61236117A true JPS61236117A (en) 1986-10-21

Family

ID=13603753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60076381A Pending JPS61236117A (en) 1985-04-12 1985-04-12 Pattern position detecting method

Country Status (1)

Country Link
JP (1) JPS61236117A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302056A (en) * 1989-05-17 1990-12-14 Hitachi Ltd Alignment method for thin film patterns
JPH04165328A (en) * 1990-10-30 1992-06-11 Hitachi Electron Eng Co Ltd Positioning method for liquid crystal sheet
EP1300872A1 (en) * 2001-10-08 2003-04-09 Infineon Technologies SC300 GmbH & Co. KG Semiconductor device identification apparatus
JP2005322748A (en) * 2004-05-07 2005-11-17 Hitachi High-Technologies Corp Overlay error measuring method, overlay error measuring apparatus, and semiconductor device manufacturing method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02302056A (en) * 1989-05-17 1990-12-14 Hitachi Ltd Alignment method for thin film patterns
JPH04165328A (en) * 1990-10-30 1992-06-11 Hitachi Electron Eng Co Ltd Positioning method for liquid crystal sheet
EP1300872A1 (en) * 2001-10-08 2003-04-09 Infineon Technologies SC300 GmbH & Co. KG Semiconductor device identification apparatus
US6866200B2 (en) 2001-10-08 2005-03-15 Infineon Technologies Sg300 Gmbh & Co. Kg Semiconductor device identification apparatus
JP2005322748A (en) * 2004-05-07 2005-11-17 Hitachi High-Technologies Corp Overlay error measuring method, overlay error measuring apparatus, and semiconductor device manufacturing method

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