JPS62217673A - light detection device - Google Patents
light detection deviceInfo
- Publication number
- JPS62217673A JPS62217673A JP61061230A JP6123086A JPS62217673A JP S62217673 A JPS62217673 A JP S62217673A JP 61061230 A JP61061230 A JP 61061230A JP 6123086 A JP6123086 A JP 6123086A JP S62217673 A JPS62217673 A JP S62217673A
- Authority
- JP
- Japan
- Prior art keywords
- light
- epitaxial layer
- substrate
- shrimp
- back surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
り千シャル結晶を用いた赤外線検知装置においてエビ基
板裏面での反射迷光を防止するためエビ結晶裏面にも表
面と同様にエビ層を形成し二これｔ反射防止層として作
用させるものである。[Detailed description of the invention] In order to prevent stray light reflected on the back surface of the shrimp substrate in an infrared detection device using a crystal crystal, a shrimp layer is formed on the back surface of the shrimp crystal in the same way as the front surface, and this serves as an anti-reflection layer. It is something that is made to work.
本発明は光検知装置、例えばｌ（ｇＱｉ’ｌ！ｅエピタ
゛キシャル結晶を用いたＬ［ｇＯｄＴａ赤外噴知装置に
関する。The present invention relates to a light sensing device, such as an L[gOdTa infrared spray device using a l(gQi'l!e epitaxial crystal).
Ｈｇ０ｄＴａ エピタキシャル結晶の基板には０ｄＴ
ｏ 、サファイア等が多く用いられるが、これは赤外線
を透過するため入射光は裏面で反射して再びエビ層で検
知され迷光信号の原因となる。Hg0dTa 0dT on the epitaxial crystal substrate
o, sapphire, etc. are often used, but since they transmit infrared rays, the incident light is reflected on the back surface and detected again in the shrimp layer, causing a stray light signal.
このため、この迷光を防止する対策が必要である。Therefore, it is necessary to take measures to prevent this stray light.
従来のエビ結晶？用いた赤外線検知素子の構造を第８図
に示す。Traditional shrimp crystal? The structure of the infrared sensing element used is shown in FIG.
図中８１はｃｄＴｏ 等の基板、８２はＨｇＱＩＴｅエ
ビ層である。In the figure, 81 is a substrate such as cdTo, and 82 is a HgQITe shrimp layer.
エビ）ｅＩ８２に入射した応答波長限界までの赤外光８
Ｂは大部分エビ層で吸収されるが一部は透過する。この
透過光に対しては、基板は透明であるため減衰せず裏面
で反射される。Shrimp) Infrared light up to the response wavelength limit incident on eI828
Most of B is absorbed by the shrimp layer, but some of it is permeated. Since the substrate is transparent, this transmitted light is not attenuated and is reflected from the back surface.
入射光が斜めの場合には、反射した透過光は最初に入射
した部分とは異なるエビ層に裏から再び入射し吸収され
て信号となる。この場合、最初入射した部分と反射後入
射した部分のエビＩＳが異なる検知素子を形成していた
場合、本来最初の部分で出るべき信号が反射後入射した
部分でも一部表われ、迷光による擬似信号が表れる。When the incident light is oblique, the reflected transmitted light enters the shrimp layer from the back side, which is different from the part where it first entered, and is absorbed, becoming a signal. In this case, if the shrimp IS in the initially incident part and the reflected incident part form different detection elements, a part of the signal that should originally be output in the initial part will also appear in the reflected and incident part, resulting in a false signal caused by stray light. A signal appears.
従来の装置では基板の裏面で反射が起っているため迷光
が生じ、ゴースト、ｑＩ似倍信号生じる問題があった。In the conventional device, reflection occurs on the back surface of the substrate, which causes stray light, causing problems such as ghosts and qI multiplied signals.
第１図は本発明の原理図である。 FIG. 1 is a diagram showing the principle of the present invention.
図中１は受光素子を形成する表面のエピタキシャル層、
２は基板、８は反射防止用の裏面のエピタキシャル層で
ある。In the figure, 1 is the epitaxial layer on the surface forming the light receiving element,
2 is a substrate, and 8 is an epitaxial layer on the back surface for antireflection.
基板２０表１Ｊｉ面に夫々エピタキシャル層ｌ、ａ金形
成し、エピタキシャル層１にのみ複数の光検知素子を形
成してエピタキシャル層１とから光を照射するようにす
る。Epitaxial layers l and a of gold are respectively formed on the surface of the substrate 20 (Table 1Ji), and a plurality of photodetecting elements are formed only in the epitaxial layer 1 so that light is irradiated from the epitaxial layer 1.
表面のエビク中ンヤルｉｔで吸収されずに透過し基板２
に入射した赤外光が、裏面のエピタキシャル層３との界
面に到達する。It is transmitted through the substrate 2 without being absorbed by the liquid on the surface.
The infrared light incident on the substrate reaches the interface with the epitaxial layer 3 on the back surface.
基板とエピタキシャル層の屈折率はほぼ等しいため、こ
の光はそのまま反射されずに裏面のエピタキシャル層に
入射し、この中で吸収されるため迷光の原因とならない
。Since the refractive index of the substrate and the epitaxial layer are almost equal, this light is not reflected as it is, but enters the epitaxial layer on the back surface, and is absorbed therein, so that it does not cause stray light.
第２図はエビタ中シャル結晶ｒ用いて作成した光伝導形
検知素子の構造を示す。FIG. 2 shows the structure of a photoconductive sensing element made using the Evita medium crystal r.
１は受光素子を形成する表面エピタキシャル層。1 is a surface epitaxial layer forming a light receiving element.
２は基板、８は裏面エピタキシャル層、４は受光部、５
は電極である。2 is a substrate, 8 is a back epitaxial layer, 4 is a light receiving part, 5
is an electrode.
４へ入射した赤外光６の一部は吸収されずに基板２に入
射するが、裏面エピタキシャル層で吸収されるため反射
は起らず、他の受光素子へ再び入射するととを防止でき
る。A part of the infrared light 6 that has entered the infrared light 4 is not absorbed and enters the substrate 2, but since it is absorbed by the epitaxial layer on the back surface, no reflection occurs, and it is possible to prevent the infrared light 6 from entering another light receiving element again.
本発明によれば、ｌ素子の基板に入射した光は裏面のエ
ピタキシャル層で吸収されて、他の素子へ入射すること
が防止されるので、擬似信号の発生を防止することがで
きる。According to the present invention, the light incident on the substrate of the L element is absorbed by the epitaxial layer on the back surface and is prevented from entering other elements, thereby making it possible to prevent the generation of false signals.
第１図は本発明の詳細な説明するための図。
第２図は本発明の一実施％Ｊｔ−示す図、第８図は従来
例を示す図である。
図に２いて、１．８はエピタキシャル層、２は基板、４
は受光部（光検知素子）、６は光を示す。
犀ｆｆ口
１Ｕ２
γ施例
ｉコ１１ミ 斧りFIG. 1 is a diagram for explaining the present invention in detail. FIG. 2 is a diagram showing one implementation %Jt of the present invention, and FIG. 8 is a diagram showing a conventional example. In the figure, 1.8 is the epitaxial layer, 2 is the substrate, and 4 is the epitaxial layer.
indicates a light receiving section (photodetecting element), and 6 indicates light. Rhinoceros ff mouth 1U2 γ example i co 11mi ax drill
Claims (1)
え、一方のエピタキシャル層１には複数の光検知素子４
が形成され、該一方のエピタキシャル層１上から光が照
射されるようにしたことを特徴とする光検知装置。Epitaxial layers 1 and 3 are provided on the front and back surfaces of the crystal substrate 2, respectively, and one epitaxial layer 1 has a plurality of photodetecting elements 4.
1. A photodetecting device characterized in that the epitaxial layer 1 is formed so that light is irradiated from above the one epitaxial layer 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061230A JPS62217673A (en) | 1986-03-19 | 1986-03-19 | light detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61061230A JPS62217673A (en) | 1986-03-19 | 1986-03-19 | light detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62217673A true JPS62217673A (en) | 1987-09-25 |
Family
ID=13165208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61061230A Pending JPS62217673A (en) | 1986-03-19 | 1986-03-19 | light detection device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62217673A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368754B2 (en) | 2002-06-10 | 2008-05-06 | Seiko Epson Corporation | Semiconductor integrated circuit, signal transmitting device, electro-optical device, and electronic apparatus |
| JP2013225376A (en) * | 2012-04-19 | 2013-10-31 | Panasonic Corp | Lighting fixture |
-
1986
- 1986-03-19 JP JP61061230A patent/JPS62217673A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7368754B2 (en) | 2002-06-10 | 2008-05-06 | Seiko Epson Corporation | Semiconductor integrated circuit, signal transmitting device, electro-optical device, and electronic apparatus |
| JP2013225376A (en) * | 2012-04-19 | 2013-10-31 | Panasonic Corp | Lighting fixture |
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