JPS62299806A - Periodic uneven pattern forming device - Google Patents
Periodic uneven pattern forming deviceInfo
- Publication number
- JPS62299806A JPS62299806A JP14457686A JP14457686A JPS62299806A JP S62299806 A JPS62299806 A JP S62299806A JP 14457686 A JP14457686 A JP 14457686A JP 14457686 A JP14457686 A JP 14457686A JP S62299806 A JPS62299806 A JP S62299806A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photodetector
- light
- uneven pattern
- depth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
3、発明の詳細な説明
(概要)
分布帰還形半導体レーザ(Distributed F
eedback La5er s以下DFBレーザと称
する)を構成する回折格子を精度良く形成する装置で有
って、周期性の凹凸パターンが化学エツチングにより形
成された半専体基板にレーザ光を照射した場合、基板よ
り回折されるレーザ光の回折光の強度が、凹凸パターン
の深さによって異なる現象を利用してエツチングの条件
を制御して、再現性良く、高精度に回折格子を形成する
ための凹凸パターンを形成する装置。[Detailed Description of the Invention] 3. Detailed Description of the Invention (Summary) Distributed feedback semiconductor laser (Distributed F
This is a device that accurately forms a diffraction grating constituting an eedback laser (hereinafter referred to as DFB laser), and when a semi-dedicated substrate on which a periodic uneven pattern is formed by chemical etching is irradiated with laser light, the substrate By controlling the etching conditions by utilizing the phenomenon that the intensity of the diffracted light of the laser beam that is diffracted by the laser beam differs depending on the depth of the uneven pattern, we can create an uneven pattern to form a diffraction grating with good reproducibility and high precision. Forming device.
本発明は基板に周期性の凹凸パターンを形成する装置に
関する。The present invention relates to an apparatus for forming a periodic uneven pattern on a substrate.
回折格子により単一波長発振が得られるDFBレーザ素
子が、大容量の光通信の光源として最近用いられている
。DFB laser elements that can obtain single wavelength oscillation using a diffraction grating have recently been used as light sources for large-capacity optical communications.
従来、このようなりFBレーザ素子を構成する回折格子
を形成する際、第3図に示すようにInPの基板1上に
所定のパターンのレジスト膜2を形成し、該レジスト膜
2をマスクとして基板1をエツチング液にて化学エツチ
ングすることで第4図に示すように深さPの周期性の凹
凸パターンを基板11−に形成し、この周期性の凹凸パ
ターンを用いて回折格子を形成している。Conventionally, when forming a diffraction grating constituting such an FB laser element, a resist film 2 with a predetermined pattern is formed on an InP substrate 1 as shown in FIG. By chemically etching 1 with an etching solution, a periodic uneven pattern with a depth P is formed on the substrate 11- as shown in FIG. 4, and this periodic uneven pattern is used to form a diffraction grating. There is.
このようにエツチングにより凹凸形状の周期性パターン
を基板に形成する場合、エツチング時間によってエツチ
ング量を制御して、凹凸状パターンの深さ寸法lを制御
している。When a periodic pattern of concavo-convex shapes is formed on a substrate by etching in this manner, the depth l of the concavo-convex pattern is controlled by controlling the amount of etching by changing the etching time.
然し、このような方法であるとレジスト膜のパターンが
所定のピンチに形成されない場合や、エツチング液の濃
度や温度によってエツチング速度が異なる場合が多く、
そのため凹凸パターンの深さが所定の寸法に精度良く制
御されて形成されない問題を生じる。However, with this method, there are many cases where the resist film pattern is not formed with the specified pinch, and the etching speed varies depending on the concentration and temperature of the etching solution.
Therefore, a problem arises in that the depth of the concavo-convex pattern cannot be precisely controlled to a predetermined dimension.
本発明は上記した問題点を除去し、凹凸形状を有する基
板上にレーザ光を照射した場合、凹凸パターンの深さの
寸法の差によって基板より回折される回折光の強度が異
なる現象を利用して、凹凸パターンの深さを制御する装
置の提供を目的とする。The present invention eliminates the above-mentioned problems and utilizes the phenomenon that when a laser beam is irradiated onto a substrate having an uneven shape, the intensity of the diffracted light diffracted from the substrate differs depending on the difference in the depth dimension of the uneven pattern. The present invention aims to provide a device for controlling the depth of a concavo-convex pattern.
本発明の周期性凹凸パターンの形成装置は、第1図に示
すように、周期性凹凸パターンを形成すべき基板11と
、該基板のエツチング液12を収容する容器13と、前
記基板11を照射するレーザ光源14と、該基板11が
エツチング液12内に挿入される以前に該基板11に照
射されるレーザ光のモニタ光の強度を検知する第1の光
検知器15と、該基板11がエツチング液12に導入さ
れ、該基板11に周期性凹凸パターンが形成された基板
を照射して回折された回折光の強度を検知する第2の光
検知器16とよりなり、
前記第1の光検知器15で検知されたモニタ光の強度と
、前記第2の光検知器16で検知された回折光の強度の
比を検知することで、基板に形成される周期性凹凸パタ
ーンの凸部面と四部面の深さを制御する。As shown in FIG. 1, the periodic uneven pattern forming apparatus of the present invention includes a substrate 11 on which a periodic uneven pattern is to be formed, a container 13 containing an etching solution 12 for the substrate, and irradiation of the substrate 11. a first photodetector 15 that detects the intensity of the monitor light of the laser beam irradiated onto the substrate 11 before the substrate 11 is inserted into the etching solution 12; a second photodetector 16 that detects the intensity of the diffracted light introduced into the etching solution 12 and irradiated onto the substrate 11 on which a periodic uneven pattern is formed; By detecting the ratio of the intensity of the monitor light detected by the detector 15 and the intensity of the diffracted light detected by the second photodetector 16, the convex surface of the periodic concavo-convex pattern formed on the substrate is detected. and control the depth of the four parts.
本発明の周期性凹凸パターンの形成装置は、レーザ光源
より出射されるモニタ光の強度と、凹凸形状のパターン
がエツチングで形成されつつある基板を照射したレーザ
光の回折光の強度の比を検知することで、凹凸パターン
の深さを精度良く検知し、この検知情報に基づいて凹凸
パターンの深さを精度良く制御する。The periodic uneven pattern forming apparatus of the present invention detects the ratio of the intensity of the monitor light emitted from the laser light source and the intensity of the diffracted light of the laser beam that irradiates the substrate on which the uneven pattern is being etched. By doing so, the depth of the uneven pattern is detected with high accuracy, and the depth of the uneven pattern is accurately controlled based on this detection information.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第2図は本発明の周期性凹凸パターンの形成装置の一実
施例を示す装置構成図である。FIG. 2 is an apparatus configuration diagram showing an embodiment of the periodic uneven pattern forming apparatus of the present invention.
図示するように本発明の装置は、周期性凹凸パターンを
形成すべき基板】1が、テフロン製の基板保持具17に
設置され、該治具17がエツチング液12が収容されて
いる容器13内に設置されている。As shown in the figure, in the apparatus of the present invention, a substrate 1 on which a periodic uneven pattern is to be formed is placed in a substrate holder 17 made of Teflon, and the jig 17 is placed inside a container 13 containing an etching solution 12. It is installed in
また容器13の下部には容器13内のエツチング液12
を攪拌するための超音波振動装置等の攪拌装置18が設
置されている。In addition, the etching liquid 12 inside the container 13 is disposed at the bottom of the container 13.
A stirring device 18 such as an ultrasonic vibration device is installed to stir the water.
また基板保持具17ば、パルスステージ19によって上
下方向に移動でき、更に水平方向に所定の角度で自在に
移動できるように成っている。Further, the substrate holder 17 can be moved vertically by the pulse stage 19, and can also be freely moved horizontally at a predetermined angle.
また容器I3に対して水平方向には、基板11を照射す
るためのヘリウム−カドミウム(lie−Cd) レ
ーザ光源14と、レーザ光源14より出射されるレーザ
光を分岐するハーフミラ−21、22が設けられ、この
ハーフミラ−21で分岐された光の一部はエツチング液
12内に浸漬された基板11に到達し、基板」二で回折
された後、その回折光は第2の光検知器16に導入され
る。Further, in the horizontal direction with respect to the container I3, a helium-cadmium (lie-Cd) laser light source 14 for irradiating the substrate 11 and half mirrors 21 and 22 for branching the laser light emitted from the laser light source 14 are provided. A part of the light branched by this half mirror 21 reaches the substrate 11 immersed in the etching liquid 12 and is diffracted by the substrate 2, and then the diffracted light is transmitted to the second photodetector 16. be introduced.
またハーフミラ−2Iで分岐された光の一部は、ハーフ
ミラ−22に到達して分岐し、その一部は第1の光検知
器I5にモニタ光として導入され、更にハーフミラ−2
2で分岐された光の一部は、エツチング液12内に浸漬
されない以前の基板11を照射してスクリーン23に到
達する。Further, a part of the light branched by the half mirror 2I reaches the half mirror 22 and is branched, and a part of the light is introduced into the first photodetector I5 as monitor light, and is further transmitted to the half mirror 22.
A part of the light branched at 2 irradiates the substrate 11 that is not immersed in the etching solution 12 and reaches the screen 23 .
このような本発明の装置を用いて基板に周期性の凹凸パ
ターンを形成する場合の動作について述べる。The operation of forming a periodic uneven pattern on a substrate using the apparatus of the present invention will be described.
まず基板保持具17に凹凸パターンを形成すべき基板1
1を収容し、この基板保持具17をパルスステージ19
に設置する。First, the substrate 1 on which the uneven pattern is to be formed on the substrate holder 17
1, and this substrate holder 17 is mounted on a pulse stage 19.
to be installed.
次いで基板11をエツチング液12に浸漬しない以前に
、基板11上にレーザ光源14よりハーフミラ−21,
22を用いてレーザ光を入射角度θで照射し、基板から
の回折光をスクリーン上23に形成された基準マーク2
4J−に写しだす。Next, before the substrate 11 is immersed in the etching solution 12, a half mirror 21,
22 is used to irradiate a laser beam at an incident angle θ, and the diffracted light from the substrate is reflected onto the reference mark 2 formed on the screen 23.
Copy onto 4J-.
レーザ光がスクリーン23上に写し出されない時には、
パルスステージ19を移動させて写るようにする。When the laser beam is not projected on the screen 23,
Move the pulse stage 19 so that it can be photographed.
このようにするのは、この基板11をエツチング液12
に浸漬した場合に基板11にレーザ光を照射した時、そ
の回折光が光検知器16に到達するようにするためであ
る。This is done by etching the substrate 11 with an etching solution 12.
This is to allow the diffracted light to reach the photodetector 16 when the substrate 11 is irradiated with laser light when the substrate 11 is immersed in water.
また同時に光検知器15にてレーザ光源14より照射さ
れた光をモニタ光として検知する。At the same time, the photodetector 15 detects the light emitted from the laser light source 14 as monitor light.
更に基板保持具17をパルスステージ19にて下降させ
、基板11をエツチング液12に浸漬させる。次いで光
源14より照射した光をハーフミラ−21を介して、凹
凸パターンが形成された基板11A上に入射角度θで照
射し、その回折光を光検知器16にて検知する。Further, the substrate holder 17 is lowered by the pulse stage 19, and the substrate 11 is immersed in the etching liquid 12. Next, the light emitted from the light source 14 is irradiated onto the substrate 11A on which the concavo-convex pattern is formed through the half mirror 21 at an incident angle θ, and the diffracted light is detected by the photodetector 16.
この光検知器16にて検知される回折光の強度は、凹凸
パターンの深さに依って異なるため、この光を光検知器
15で検知されたモニタ光と比較検知することで凹凸パ
ターンの深さが正確に検知でき、この検知情報をもとに
してエツチング時間等のエツチング条件を定めれば、凹
凸パターンの深さの寸法が精度よく制御できる。Since the intensity of the diffracted light detected by the photodetector 16 differs depending on the depth of the uneven pattern, this light is compared with the monitor light detected by the photodetector 15 to detect the depth of the uneven pattern. If the etching conditions such as etching time are determined based on this detected information, the depth of the uneven pattern can be controlled with high accuracy.
このような本発明の装置を用いてレーザ素子を構成する
回折格子を形成すれば、凹凸パターンの深さが所定の値
に制御された高信頼度の回折格子が得られる。If a diffraction grating constituting a laser element is formed using such an apparatus of the present invention, a highly reliable diffraction grating in which the depth of the concavo-convex pattern is controlled to a predetermined value can be obtained.
以上述べたように本発明の装置によれば、凹凸パターン
の深さが高精度に制御された高信頼度の回折格子が得ら
れる効果がある。As described above, according to the apparatus of the present invention, it is possible to obtain a highly reliable diffraction grating in which the depth of the concavo-convex pattern is controlled with high precision.
第1図は本発明の原理図、
第2図は本発明の一実施例の装置構成図、第3図は従来
の回折格子の製造方法を説明するための断面図、
第4図は従来の方法で凹凸パターンを形成した基板の断
面図である。
図に於いて、
11.11^は基板、12はエツチング液、13は容器
、14はレーザ光源、15は第1の光検知器、16は第
2の光検知器、17は基板保持具、1日は攪拌装置、1
9はパルスステージ、21.22はハーフミラ−123
はスクリーン、24はマークを示す。
手軽8訃堂理図
第1図
μ褐回柱1f4r装遣加五を力平0bめ屯耐面m第3図
名を庫A太泳7.凹凸Iv7−シを居残゛乙たJ【、イ
2と碕Δ辷ケー面丹σ第4図
4Jepq−fk’rlリ−qif精t&m第2図Fig. 1 is a diagram of the principle of the present invention, Fig. 2 is a diagram showing the configuration of an apparatus according to an embodiment of the present invention, Fig. 3 is a sectional view for explaining a conventional method of manufacturing a diffraction grating, and Fig. 4 is a diagram of the conventional method of manufacturing a diffraction grating. FIG. 2 is a cross-sectional view of a substrate on which a concavo-convex pattern is formed by the method. In the figure, 11.11^ is a substrate, 12 is an etching solution, 13 is a container, 14 is a laser light source, 15 is a first photodetector, 16 is a second photodetector, 17 is a substrate holder, 1 day is a stirring device, 1
9 is a pulse stage, 21.22 is a half mirror 123
indicates a screen, and 24 indicates a mark. Easy 8 Fando Rizu Figure 1 μ brown column 1f 4r Sokatsu Kago Rikihira 0b Me tun Taiyo m Figure 3 Name Warehouse A Taiyo 7. Irregularity Iv7-shi left behind J
Claims (1)
板(11)のエッチング液(12)を収容する容器(1
3)と、前記基板(11)を照射するレーザ光源(14
)と、該基板(11)がエッチング液(12)内に挿入
される以前に該基板(11)に照射されるレーザ光のモ
ニタ光の強度を検知する第1の光検知器(15)と、該
基板(11)がエッチング液(12)に導入され、該基
板(11)に周期性凹凸パターンが形成された基板(1
1A)を照射して回折された回折光の強度を検知する第
2の光検知器(16)とよりなり、 前記第1の光検知器(15)で検知されたモニタ光の強
度と、前記第2の光検知器(16)で検知された回折光
の強度の比を検知することで、基板(11)に形成され
る周期性凹凸パターンの深さを制御することを特徴とす
る周期性凹凸パターンの形成装置。[Claims] A substrate (11) on which a periodic uneven pattern is to be formed, and a container (1) containing an etching solution (12) for the substrate (11).
3) and a laser light source (14) that irradiates the substrate (11).
), a first photodetector (15) that detects the intensity of a monitor light of a laser beam irradiated to the substrate (11) before the substrate (11) is inserted into the etching solution (12); , the substrate (11) is introduced into an etching solution (12), and the substrate (11) has a periodic uneven pattern formed thereon.
a second photodetector (16) that detects the intensity of the diffracted light that has been irradiated and diffracted by the first photodetector (15); Periodicity characterized by controlling the depth of the periodic uneven pattern formed on the substrate (11) by detecting the intensity ratio of the diffracted light detected by the second photodetector (16). A device for forming uneven patterns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14457686A JPS62299806A (en) | 1986-06-19 | 1986-06-19 | Periodic uneven pattern forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14457686A JPS62299806A (en) | 1986-06-19 | 1986-06-19 | Periodic uneven pattern forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62299806A true JPS62299806A (en) | 1987-12-26 |
Family
ID=15365382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14457686A Pending JPS62299806A (en) | 1986-06-19 | 1986-06-19 | Periodic uneven pattern forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62299806A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100357981B1 (en) * | 2000-06-29 | 2002-10-25 | 삼성전자 주식회사 | Apparatus for manufacturing grating device and method of manufacturing the same |
-
1986
- 1986-06-19 JP JP14457686A patent/JPS62299806A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100357981B1 (en) * | 2000-06-29 | 2002-10-25 | 삼성전자 주식회사 | Apparatus for manufacturing grating device and method of manufacturing the same |
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