JPS6230327A - Dry etching device - Google Patents

Abstract

PURPOSE:To uniformly etched the entire surface of a sample by surrounding the periphery of the sample with an insulating cover, thereby suppressing the edge effect at etching time. CONSTITUTION:Gas fed from a process gas inputting unit 1 becomes plasma by high frequency power applied to sample electrodes 6 or opposed electrodes 2 to etch a sample 2 in a processing chamber 3 evacuated in vacuum by a vacuum evacuating unit 7. In this case, an insulating cover 5 made of an insulator such as a quartz is so mounted as to surround the periphery of a sample 4. Thus, it can prevent an electric field from being applied to the periphery of the sample 4 to be readily concentrated at the edge of the periphery of the sample 4 to suppress the progress of the etching due to edge effect.

Description

DETAILED DESCRIPTION OF THE INVENTION [Use of the Invention] The present invention relates to a dry etching apparatus, and particularly to a dry etching apparatus suitable for uniform processing of a sample.

[Background of the invention]

For example, on April 15, 1981, ■
As stated on page 464 of the "Ultra LSI Process Data Handbook" published by Jens Forum,
By exposing the sample to an electric field, a subtle disturbance of the electric field may occur, and this disturbance of the electric field may deteriorate the uniformity.In order to compensate for this disturbance, the third In some cases, an auxiliary substrate 8 is arranged as shown in the figure to improve uniformity.

However, the auxiliary board 8 is designed to fit the board 9 exactly, so it requires precision machining. When etched, the auxiliary substrate 8 is also etched, so there are problems such as the need to replace the auxiliary substrate 8 after etching the substrate 9. 10 is an electric field.

[Purpose of the invention]

An object of the present invention is to provide a dry etching apparatus which can uniformly etch the entire surface of a sample while suppressing the error effect during etching.

[Summary of the invention]

The present invention allows vacuum evacuation! 2!1. a laboratory room, a sample electrode mounted with a sample electrode in the processing chamber, a counter electrode opposing the 1+ sample electrode in the processing chamber, and an insulating cover surrounding the sample mounted on the sample electrode. This feature suppresses the Etsure effect during etching and enables uniform etching of the entire surface of the sample.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.

In the processing chamber 3, which has been evacuated by the vacuum exhaust bag H7,
The gas introduced from the process gas introduction device ll is applied to the sample electrode [! 6 or facing type! The sample 4 is turned into plasma by the high frequency power applied to the sample 2. On this occasion,
By installing an insulating cover made of an insulating material, for example, quartz, to surround the sample 4, it is possible to prevent interference of the electric field around the sample 4, which tends to concentrate on the edges around the sample 4, due to the edge effect. The progress of etching can be suppressed.

As described above, according to the wood example, the entire surface of the sample can be etched uniformly, the processing accuracy can be improved, and the variation in etching speed is small.

This has the effect of shortening overetching time, reducing damage to elements, and improving productivity.

〔Effect of the invention〕

According to the present invention, since the etch effect can be suppressed during etching, the entire surface of the sample can be etched uniformly.

[Brief explanation of drawings]

Figure 1 shows a dry etching device ♂ which is an embodiment of the present invention.
FIG. 2 is a plan sectional view of FIG. 1 viewed from AA. 1...Process gas introduction device, 2...Counter electrode, 3-...Processing chamber, 4...Sample, 5
Insulating cover, 6 years old 1 figure 2 figures 3 Procedural amendment (method) 21 Showa 60 patent application No. 60628 Name of the invention Dry etching device correction person 1 + L' giant J) lvIi, f Patent issue Ifi person and 1
Do: '5101 stock management [1st]
Contents of amendment in the brief explanation column of drawings in the specification subject to amendment by the manufacturing agent 1. The 6th line of page 4 of the specification is generally amended as follows. FIG. 3 is a perspective view showing the prior art. that's all

Claims (1)

[Claims] 1. A processing chamber that is evacuated, a sample electrode on which a sample is mounted within the processing chamber, a counter electrode that faces the sample electrode within the processing chamber, and an insulating cover that surrounds the sample mounted on the sample electrode. A dry etching device comprising: