JPS6360561A - solid-state imaging device - Google Patents

Abstract

PURPOSE:To prevent the picture defect of a solid-state image sensor while reducing cost by integrally sealing a mount section, one part of an external lead, the solid-state image sensor, a metallic small-gage wire, a resin and a color filter with a molding resin. CONSTITUTION:A solid-state image sensor 10 is die-bonded with a mount section 91 by an epoxy group resin 40, and wire-bonded with external leads 92 by metallic small-gage wires 5. A color filter 20 is fitted onto the solid-state image sensor 10 through a screen resin 7 shaped onto the surface of a wafer substrate 11, and a filter layer 22 is arranged so as to be precisely positioned onto a light-receiving region 12. The mount section 91, one part of the external leads 92, the solid-state image sensor 10, the metallic small-gage wires 5, the screen resin 7 and the color filter 20 are sealed integrally with a low-cost molding resin 8. Accordingly, a low-cost solid-state image sensing device having no picture defect and high reliability can be acquired.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state m-image device, and particularly to a solid-state m-image device in which a solid-state me element and the like are sealed with a molding resin.

[Conventional technology l FIG. 3 is a sectional view showing a conventional solid-state MS device.

In the figure, solid! The Is image element 10 is a wafer substrate 11
and the light receiving fJ area 1 formed on the surface of this wafer substrate 11.
It is composed of 2. The package 30 includes a package body 31 made of ceramic and Kovar, 4270.
It is composed of a bottom plate 32 made of a material such as A, and an external lead 33 made of a material such as 427O, for extracting the electrical signal of the solid-state image sensor 10 to the outside. The solid-state image sensor 10 is attached to the bottom plate 32 using an epoxy resin 40.
Die bonding is performed by adjusting the position W and inclination with high precision. This die bonding is performed by applying an epoxy resin 40 between the bottom plate 32 and the wafer substrate 11 and heating the epoxy resin 4o at a low temperature. The solid vans element 10 is wire-bonded to the external lead 33 by a metal wire J115. The color filter 20 is composed of an optical glass 2] and a filter layer 22 formed on the surface of the optical glass 21.

The color filter 20 has a filter layer 22 in the light receiving area 12.
The solid-state image sensor 10 is placed so as to be positioned accurately above the
An adhesive 41 is applied between the color filter 20 and the color filter 20, and the adhesive 41 is irradiated with ultraviolet rays and heated to be bonded and fixed to the surface of the solid-state Ifi image element 10. The metal-attached glass lid 60 is composed of a metal frame 61 made of Kovar, 42 alloy, etc., and an optical glass 62. A metal glass lid 6 is placed on the top of the package body 31.
0 is provided, and the solid-state image sensor 10 and color filter 20 . These parts are protected from the outside air by sealing the metal wire Pa5.

[Problems to be Solved by the Invention] In the conventional solid-state imaging device, the package body 31 is made of ceramic, so cracks and chips occur in the ceramic, resulting in foreign matter such as ceramic fragments. solid! There was a problem in that the I-image toxin particles 0 entered the light-receiving region 12 and caused image defects in the solid-state image sensor 10.

In addition, the package body 31. There was a problem that the metal-attached glass lid 60 was expensive.

This invention was made to solve the above-mentioned problems, and is a solid Wl film that is free from image defects, has high reliability, and is inexpensive! The purpose is to obtain an IS position.

Means for Solving Problem E] The solid-state imaging device according to the present invention includes a resin provided on the surface of the solid-state image sensor so as to surround the light-receiving area of the solid-state image sensor,
The solid-state image sensor is die-bonded to the mount part of the lead frame, the solid-state image sensor and the external leads of the lead frame are connected with thin metal wires, a color filter is provided on the solid-state image sensor via resin, and the molded resin is used to mount it. A part of the external lead, a solid-state image sensor, a thin metal wire, a resin, and a color filter are integrally sealed.

[Function] In this invention, instead of using an expensive ceramic package body and a metal glass lid, the color filter is used like a sealing glass lid, and the solid-state image sensor, color filter, etc. are molded into an inexpensive mold. Since it is sealed with resin, vMe defects in the solid-state image sensor due to foreign matter such as ceramic chips do not occur, and the solid-state ME device becomes inexpensive.

〔Example] Hereinafter, a practical example of the present invention will be explained with reference to the drawings.

In the description of this embodiment, the description of parts that overlap with the description of the conventional technology will be omitted as appropriate.

FIG. 1A is a plan view of a wafer on which solid-state imaging elements of a solid-state imaging device according to an embodiment of the present invention are made;
Figure B is a sectional view taken along line A--A in Figure 1A.

In the figure, a plurality of light receiving areas 12 are formed on the surface of a wafer 1, and a frame-shaped screen resin 7 is printed on the surface of the wafer 1 so as to surround each light receiving area 12. The wafer 1 on which the pattern has been formed is diced along the dicing line 2 and diced into each solid-state image sensor 1o composed of a wafer substrate 11 and a light-receiving area 12.
Ill be taken.

FIG. 2 is a sectional view showing a solid-state image device according to an embodiment of the present invention.

In the figure, a lead frame 90 is composed of a mount portion 91 and external leads 92 made of 42 alloy or the like. The solid-state image sensor 10 separated from the wafer 1 by dicing is die-bonded to the mount portion 91 using an epoxy resin 40 with the position and inclination of the solid-state image sensor 10 adjusted with high precision. This guide bonding is performed by applying an epoxy resin 40 between the mount part 91 and the wafer substrate 11,
This is done by heating at low temperatures. The solid-state image sensor 10 is wire-bonded to an external lead 92 for extracting the electrical signal of the solid-state m-detector 10 to the outside using a metal wire 5. A color filter 2o is provided on the solid-state image sensor 1o via a screen resin 7 provided on the surface of the wafer substrate 11, so that the filter 22 is precisely positioned on the light receiving area 12! i! It is placed. The mount part 91, a part of the external lead 92, the solid-state image sensor 10, the metal 11[11S5, the screen resin 7, and the color filter 20] are made of an inexpensive mold 1.
The parts are integrally sealed with a resin 8, thereby protecting these parts from the outside air. During molding of the mold resin 8, the screen resin 7 prevents the mold resin 8 from entering the light receiving area 12 of the solid-state imaging device 1o.

In this way, the color filter 2o is used like a sealing glass lid without using the expensive ceramic package body 31 and the metal glass lid 60, and solid ml
Since the 5i element 10, color filter 20, etc. are sealed with the inexpensive molding resin 8, image defects in the solid-state M detection element 10 due to foreign matter such as ceramic fragments do not occur, and the solid-state imaging device becomes inexpensive.

[Effects of the Invention] As described above, according to the present invention, a color filter is used like a sealing glass lid without using an expensive ceramic badge member and a metal glass lid. Solid-state image sensors and color filters are sealed with inexpensive molding resin, so they are highly reliable and inexpensive solids with no image defects! A 111m device can be obtained.

[Brief explanation of the drawing]

FIG. 1A is a plan view of a wafer on which solid-state imaging elements of a solid-state imaging device according to an embodiment of the present invention are made;
Figure B is a sectional view taken along line A--A in Figure 1A. FIG. 2 is a sectional view showing a solid-state imaging device according to an embodiment of the invention. FIG. 3 is a sectional view showing a conventional solid-state imaging device. In the figure, 1 is a wafer, 2 is a dicing line, 5 is a thin metal wire, 7 is a screen resin, 8 is a mold resin, 1
0 is a solid-state image sensor, 11 is a wafer substrate, 12 is a light receiving area, 20 is a color filter, 21 is an optical glass, 22 is a filter layer, 40 is an epoxy resin, 90 is a lead frame, 91 is a mount part, 92 is an external part It is the lead. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa Figure 1A, Figure IB

Claims (2)

[Claims] (1) A solid-state image sensor, a resin provided on the surface of the solid-state image sensor so as to surround a light-receiving area of the solid-state image sensor, a mount section for die-bonding the solid-state image sensor, and an electrical connection of the solid-state image sensor. a lead frame including an external lead for extracting a signal to the outside; a thin metal wire for connecting the solid-state imaging device and the external lead; and a color filter provided on the solid-state imaging device via the resin. A solid-state imaging device, comprising: a mold resin that integrally seals the mount section, a part of the external lead, the solid-state imaging element, the thin metal wire, the resin, and the color filter. (2) The color filter is composed of optical glass and a filter layer formed on the surface of the optical glass, and the filter layer is arranged so as to be located on the light receiving area. The solid-state imaging device described.