KR0164504B1 - A gas injector of lpcvd machine - Google Patents
A gas injector of lpcvd machine Download PDFInfo
- Publication number
- KR0164504B1 KR0164504B1 KR1019950043924A KR19950043924A KR0164504B1 KR 0164504 B1 KR0164504 B1 KR 0164504B1 KR 1019950043924 A KR1019950043924 A KR 1019950043924A KR 19950043924 A KR19950043924 A KR 19950043924A KR 0164504 B1 KR0164504 B1 KR 0164504B1
- Authority
- KR
- South Korea
- Prior art keywords
- injector
- vapor deposition
- chemical vapor
- thin film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 반도체소자 제조장비에 사용되는 저압화학기상증착장비에 관한 것으로 특히 공정조건을 개선하여 웨이퍼에 증착되는 막질의 균일성을 개선하기 위한 저압화학기상증착장비의 인젝터 구조에 대한 것이다.The present invention relates to a low pressure chemical vapor deposition apparatus used in semiconductor device manufacturing equipment, and more particularly, to an injector structure of a low pressure chemical vapor deposition apparatus for improving the uniformity of the film quality deposited on the wafer by improving process conditions.
종래의 저압화학기상증착장비는 공정조건중 반응실로 공급되는 공정가스가 위치의 따른 농도의 분포가 고르지 않아 공정의 진행시 박막의 균일도를 저하시키는 문제점이 있었다.Conventional low pressure chemical vapor deposition equipment has a problem that the uniformity of the thin film during the process of the process is not uniform because the distribution of the concentration according to the position of the process gas supplied to the reaction chamber during the process conditions.
본 발명은 상술한 문제점을 해소하기 위한 것으로, 반도체소자 제조공정중 웨이퍼의 표면에 박막을 형성하기 위해 반응실내에 반응가스를 공급하는 인젝터의 길이를 조절하여 챔버 위치에 내의 공급되는 가스의 농도분포를 일정하게 유지지하므로서 상하 위치의 차이를 갖는 웨이퍼의 표면에 균일한 박막이 형성되도록 한 것이다.The present invention is to solve the above problems, the concentration distribution of the gas supplied in the chamber position by adjusting the length of the injector for supplying the reaction gas in the reaction chamber to form a thin film on the surface of the wafer during the semiconductor device manufacturing process While maintaining a constant, a uniform thin film is formed on the surface of the wafer having a difference in the vertical position.
Description
제1도 내지 제4도는 화학기상증착장비의 가스 인젝터 길이에 따른 박막의 두께와 공정가스의 농도를 비교한 그래프.1 to 4 is a graph comparing the thickness of the thin film and the concentration of the process gas according to the gas injector length of the chemical vapor deposition equipment.
제5도는 본 고안의 인젝터의 구조를 나타낸 것이다.Figure 5 shows the structure of the injector of the present invention.
제6도는 본 발명에 따른 화학기상 증착장비에서 박막의 두께와 공정가스의 농도를 비교한 그래프.6 is a graph comparing the thickness of the thin film and the concentration of the process gas in the chemical vapor deposition apparatus according to the present invention.
제7도는 종래 화학기상증착장비의 개략적인 구성도.7 is a schematic diagram of a conventional chemical vapor deposition equipment.
제8도는 종래 화학기상증착장비의 박막의 두께와 공정가스의 농도 분포를 나타낸 그래프.8 is a graph showing the thickness of the thin film and the concentration of the process gas of the conventional chemical vapor deposition equipment.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 공정챔버 11 : 긴 인젝터10 process chamber 11: long injector
12 : 중간 인젝터 13 : 짧은 인젝터12: medium injector 13: short injector
본 발명은 반도체소자 제조장비에 사용되는 저압화학기상증착장비에 관한 것으로 특히 공정조건을 개선하여 웨이퍼에 증착되는 막질의 균일성을 개선하기 위한 저압화학기상증착장비의 인젝터 구조에 한 것이다.The present invention relates to a low pressure chemical vapor deposition apparatus used in semiconductor device manufacturing equipment, and more particularly, to an injector structure of a low pressure chemical vapor deposition apparatus for improving the uniformity of the film quality deposited on a wafer by improving process conditions.
반도체소자의 제조공정중 박막을 증착하기 위해 사용되는 장비로 화학기상증착(Chemical Vapor Deposition;CVD)장비가 있다.Chemical Vapor Deposition (CVD) equipment is used to deposit thin films during the manufacturing process of semiconductor devices.
CVD공정의 개념은 적층될 물질원자를 포함한 가스상태의 화학물질을 반응실로 보내고 이 반응실에서 화학물질이 다른 가스와 반응하여 원하는 물질을 만들어 이 물질을 기판위에 증착한다.The concept of the CVD process sends gaseous chemicals containing material atoms to be deposited into the reaction chamber, where the chemicals react with other gases to form the desired material and deposit the material on the substrate.
이러한 CVD장비중에서 0.1∼100Torr 압력하에서 박막을 증착하는 것이 저압(Low Pressure;LP) 화학기상증착장비이다.In such CVD equipment, the deposition of a thin film at a pressure of 0.1 to 100 Torr is a low pressure (LP) chemical vapor deposition equipment.
제7도는 상술한 용도로 사용되는 종래의 화학기상증착장비의 전체적인 구성을 나타낸 단면도이다.7 is a cross-sectional view showing the overall configuration of a conventional chemical vapor deposition equipment used for the above-mentioned applications.
제7도에 나타낸 것은 수직형(Vertical) LPCVD장비로 석영튜브를 사용하는 반응실(10)에 가스를 공급하기 위하여 복수개의 인젝터(Injector)를 구비하고 있다.7 shows a plurality of injectors for supplying gas to the reaction chamber 10 using quartz tubes in a vertical LPCVD apparatus.
상기 인젝터는 반응실의 상부까지 공정가스를 공급하는 긴 인젝터(11)와, 반응실의 하부에 공정가스를 공급하는 짧은 인젝터(13)와, 상기 긴 인젝터와 짧은 인젝터 사이에 위치하여 반응실의 중간부위에 가스을 공급하는 중간 인젝터(12)로 구성된다.The injector is located between the long injector 11 for supplying the process gas to the upper part of the reaction chamber, the short injector 13 for supplying the process gas to the lower part of the reaction chamber, and the long injector and the short injector. It consists of an intermediate injector 12 for supplying gas to the intermediate portion.
LPCVD장비에 있어서 공정의 균일도에 영향을 주는 공정조건으로는 온도, 압력, 웨이퍼 간격, 가스의 유량이 있다.Process conditions that affect process uniformity in LPCVD equipment include temperature, pressure, wafer spacing, and gas flow rate.
이들 변수들을 적절히 조절하면 기판위에 증착되는 막질의 균일도를 향상시킬 수 있게된다.Properly adjusting these variables can improve the uniformity of the film quality deposited on the substrate.
상기 인젝터는 상술한 조건중 가스의 유량에 영향을 주는 요소로 세개의 인젝터가 각각 적절한 위치에서 공급되어야만 반응실에 공급되는 공정가스의 농도분포가 일정하게 된다.The injector is a factor that affects the flow rate of the gas under the above conditions, and the concentration distribution of the process gas supplied to the reaction chamber is constant only when three injectors are supplied at appropriate positions.
만약 공정가스의 농도분포가 일정하지 않게되면 150매의 웨이퍼를 적층하는 동시에 증착하게 되므로, 상,중,하의 층에 각각 위치한 웨이퍼에 형성되는 박막의 균일도에 차이를 보이게 된다.If the concentration distribution of the process gas is not constant, since 150 wafers are stacked and deposited at the same time, the uniformity of the thin films formed on the wafers positioned in the upper, middle, and lower layers, respectively, is different.
종래의 LPCVD장비의 인젝터의 길이는 긴 인젝터가 1125㎜이고, 중간 인젝터가 725㎜이며, 짧은 인젝터가 25㎜로 형성되어 있었다.The length of the injector of the conventional LPCVD equipment was 1125 mm for the long injector, 725 mm for the middle injector, and 25 mm for the short injector.
제8도는 상술한 구성을 갖는 인젝터에 의한 웨이퍼에 형성되는 위치별 박막의 두께와 공정가스의 농도를 나타낸 것이다.8 shows the thickness of the thin film for each position and the concentration of the process gas formed on the wafer by the injector having the above-described configuration.
제7도에서 파악할 수 있듯이 종래의 인젝터를 통한 공정가스의 공급은 반응실의 위치에 따라 공정가스의 농도 변화가 심하게 되고, 웨이퍼에 증착되는 박막의 두께에도 영향을 주는 것을 알수 있다.As can be seen in FIG. 7, it can be seen that the supply of the process gas through the conventional injector causes a serious change in the concentration of the process gas depending on the position of the reaction chamber, and also affects the thickness of the thin film deposited on the wafer.
따라서 종래의 장비 화학기상증착장비는 공정조건중 공급되는 가스가 위치에 따른 밀도농도의 차이가 발생하여 박막의 균일도를 저하시키는 문제점이 있었다.Therefore, the conventional equipment chemical vapor deposition equipment has a problem in that the density of the gas supplied during the process conditions caused a difference in density, thereby reducing the uniformity of the thin film.
본 발명은 상술한 문제점들을 해소하기 위한 것으로, 공정장비의 반응실내 위치에 따른 농도의 차이없이 가스를 공급하여 공정의 균일성을 높이므로서 제품의 질을 향상시킬 수 있도록 한 저압화학기상증착장비의 인젝터 구조를 제공하는데 목적이 있다.The present invention is to solve the above problems, low pressure chemical vapor deposition equipment to improve the quality of the product by increasing the uniformity of the process by supplying gas without a difference in concentration according to the position of the reaction chamber of the process equipment The purpose is to provide an injector structure.
상기 목적을 달성하기 위한 본 발명의 특징으로는 반도체소자 제조공정중 웨이퍼의 표면에 박막을 형성하기 위해 반응실내에 반응가스를 공급하는 인젝터를 구비한 화학기상증착장비에 있어서, 상기 화학기상증착장비의 공정조건 중에서 인젝터의 길이를 조절하여 박막을 형성하도록한 것을 특징으로 한다.In the chemical vapor deposition apparatus having an injector for supplying a reaction gas into the reaction chamber to form a thin film on the surface of the wafer during the semiconductor device manufacturing process to achieve the above object, the chemical vapor deposition equipment It characterized in that the process to control the length of the injector to form a thin film.
이를 위해서 상기 인젝터는 반응실의 상부에 반응가스를 공급하는 긴 인젝터의 길이를 1025㎜로 형성하고, 반응실의 중간부위에 가스를 공급하는 중간 인젝터의 길이를 725㎜로 형성하고, 반응실의 하부에 공정가스를 공급하는 짧은 인젝터의 길이를 250㎜로 형성한다.To this end, the injector has a length of 1025 mm of the long injector for supplying the reaction gas to the upper portion of the reaction chamber, and a length of the middle injector for supplying gas to the middle portion of the reaction chamber to 725 mm, The short injector for supplying the process gas to the lower portion is formed to 250 mm in length.
상술한 구성을 갖는 본 발명은 챔버내 공급되는 가스의 분포를 안정되게 하므로서 기판에 증착되는 박막의 균일도를 향상시키도록 한다.The present invention having the above-described configuration stabilizes the distribution of the gas supplied into the chamber, thereby improving the uniformity of the thin film deposited on the substrate.
이하 본 발명의 바람직한 실시예 및 작용·효과를 첨부된 도면에 따라서 상세히 설명한다.Hereinafter, preferred embodiments of the present invention, actions and effects will be described in detail with reference to the accompanying drawings.
본 발명은 기판에 박막을 형성하기 위한 저압화학기상증착장비의 공정조건중 반응가스를 공급하는 인젝터의 길이를 조절하여 공정의 균일도를 향상하기 위한 것이다.The present invention is to improve the uniformity of the process by adjusting the length of the injector for supplying the reaction gas during the process conditions of the low pressure chemical vapor deposition equipment for forming a thin film on the substrate.
이를 위한 본 발명의 바람직한 인젝터의 길이를 선택하기 위한 인젝터의 길이를 변경하면서 테스트를 하였다.To this end, tests were made while changing the length of the injector to select the preferred length of the injector of the present invention.
본 발명에서 인젝터 길이의 개선으로 얻고자하는 공정조건은 위치에 따라 증착되는 박막의 증착두께가 2,000±150Å이고, 가스농도 분포가 13.9±1% 이다.In the present invention, the process conditions to be obtained by the improvement of the injector length are 2,000 ± 150Å, and the gas concentration distribution is 13.9 ± 1%.
제1도 내지 제4도는 본 발명의 인젝터의 길이의 변화에 따른 박막의 두께와 가스의 농도의 상관 관계를 나타낸 그래프이다.1 to 4 are graphs showing the correlation between the thickness of the thin film and the concentration of the gas according to the change of the length of the injector of the present invention.
먼저 제1도는 긴 인젝터, 중간 인젝터, 짧은 인젝터의 길이를 각각 975㎜, 725㎜, 25㎜로 형성하여 1차 테스트한 결과이다.First, FIG. 1 shows the results of the first test by forming the lengths of the long injector, the intermediate injector, and the short injector into 975 mm, 725 mm, and 25 mm, respectively.
상기 인젝터의 길이는 종래의 인젝터와 비교하여 중간 인젝터만 150㎜ 짧게 형성한 것으로, 테스트 결과 공정챔버내 공정가스의 농도에 있어 위치별로 큰 차이를 보이게 됨을 알수 있다.The length of the injector is 150 mm shorter than that of the conventional injector, and as a result of the test, it can be seen that the position of the injector shows a large difference in the concentration of the process gas.
제2도는 중간 인젝터의 길이는 종래와 동일한 길이로 형성하고, 긴 인젝터와 짧은 인젝터의 길이를 각각 975㎜, 400㎜로 형성하여 공정을 2차 테스트한 결과이다.2 shows the results of the secondary test of the intermediate injector having the same length as the conventional one, and the lengths of the long injector and the short injector being 975 mm and 400 mm, respectively.
2차 테스트한 결과도 상기 1차 테스트의 결과와 마찬가지로 위치별 가스의 농도 분포가 불안정하며 박막의 두께도 균일하지 않은 결과를 얻었다.As a result of the second test, the concentration distribution of gas for each position was unstable and the thickness of the thin film was not uniform as in the first test.
제3도, 제4도는 중간 인젝터의 길이를 종래와 동일한 길이로 형성하고, 긴 인젝터의 길이를 각각 1050㎜, 1030㎜로 형성하고, 짧은 인젝터의 길이를 300㎜, 285㎜로 형성하여 3차, 4차 테스트한 공정결과를 나타낸 것이다.3 and 4 show that the length of the intermediate injector is the same as before, the length of the long injector is 1050 mm and 1030 mm, and the length of the short injector is 300 mm and 285 mm, respectively. The results of the 4th test are shown.
그 결과 증착되는 박막의 두께에 있어서는 어느 정도 개선은 되었으나, 공정가스의 농도 분포에 있어서는 위치에 따른 편차를 심하게 보여 만족한 결과를 얻지 못하였다.As a result, the thickness of the deposited film was improved to some extent, but the variation in the concentration of the process gas was severely shown depending on the position, so that a satisfactory result was not obtained.
제5도는 긴 인젝터의 길이를 1025㎜로, 중간 인젝터의 길이를 725㎜로, 짧은 인젝터의 길이를 250㎜로 형성하여 5차 테스트를 위한 인젝터의 구조를 나타낸 것이다.5 shows the structure of the injector for the fifth test by forming a long injector with a length of 1025 mm, a middle injector with a length of 725 mm, and a short injector with a length of 250 mm.
제6도는 제5도에서 구성을 갖는 인젝터에 의한 5차 테스트 결과를 나타낸 것이다.FIG. 6 shows the fifth test results by the injector having the configuration in FIG.
그리고 상기 그래프에 나타낸 데이터는 계속적인 인젝터 이외의 공정조건을 변경 후 테스트한 결과이다.The data shown in the graph is a test result after changing the process conditions other than the continuous injector.
상기 테스트 결과를 살펴보면 위치별 박막의 두께가 원하는 2,000±150Å의 범위내에서 균일도를 나타내었으며, 위치별 가스 농도의 분포도 13.9±1%이내에 속하는 만족한 결과를 얻었다.Looking at the test results, the thickness of each thin film showed uniformity within a desired range of 2,000 ± 150Å, and the distribution of gas concentration per position was within 13.9 ± 1%.
상기 5차 테스트한 결과 본 발명에서 얻고자 하는 공정조건을 만족하는 인젝터의 길이임을 알수 있다.As a result of the fifth test, it can be seen that the length of the injector satisfying the process condition to be obtained in the present invention.
따라서 본 발명에서는 5차 테스트에 사용한 인젝트를 저압증착장비에 적용하여 공정을 실행하게 되면 반응로 내에 공급되는 공정가스의 농도 분포를 일정하게 유지하므로서 박막의 증착 균일도를 향상시킬 수 있게된다.Therefore, in the present invention, when the injecting used in the 5th test is applied to the low pressure deposition equipment, the process can be carried out while maintaining the concentration distribution of the process gas supplied into the reactor, thereby improving the deposition uniformity of the thin film.
즉 본발명은 결과적으로 공정조건인 챔버내 공정가스의 분포를 개선하므로서 웨이퍼의 표면에 균일한 박막을 형성하여 제품의 균일도가 향상되도록 한 것이다.That is, the present invention is to improve the uniformity of the product by forming a uniform thin film on the surface of the wafer as a result of improving the distribution of the process gas in the chamber, which is a process condition.
Claims (2)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950043924A KR0164504B1 (en) | 1995-11-27 | 1995-11-27 | A gas injector of lpcvd machine |
| TW085113903A TW310448B (en) | 1995-11-27 | 1996-11-13 | |
| JP8316691A JPH09213644A (en) | 1995-11-27 | 1996-11-27 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950043924A KR0164504B1 (en) | 1995-11-27 | 1995-11-27 | A gas injector of lpcvd machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970030248A KR970030248A (en) | 1997-06-26 |
| KR0164504B1 true KR0164504B1 (en) | 1999-02-01 |
Family
ID=19435856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950043924A Expired - Fee Related KR0164504B1 (en) | 1995-11-27 | 1995-11-27 | A gas injector of lpcvd machine |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH09213644A (en) |
| KR (1) | KR0164504B1 (en) |
| TW (1) | TW310448B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100434516B1 (en) * | 2001-08-27 | 2004-06-05 | 주성엔지니어링(주) | semiconductor manufacturing apparatus |
| CN113584465B (en) * | 2021-07-30 | 2023-06-23 | 长鑫存储技术有限公司 | Chemical vapor deposition apparatus |
-
1995
- 1995-11-27 KR KR1019950043924A patent/KR0164504B1/en not_active Expired - Fee Related
-
1996
- 1996-11-13 TW TW085113903A patent/TW310448B/zh not_active IP Right Cessation
- 1996-11-27 JP JP8316691A patent/JPH09213644A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW310448B (en) | 1997-07-11 |
| JPH09213644A (en) | 1997-08-15 |
| KR970030248A (en) | 1997-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100436941B1 (en) | apparatus and method for depositing thin film | |
| US5503875A (en) | Film forming method wherein a partial pressure of a reaction byproduct in a processing container is reduced temporarily | |
| US6872421B2 (en) | Atomic layer deposition method | |
| US4098923A (en) | Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat | |
| US5819684A (en) | Gas injection system for reaction chambers in CVD systems | |
| US6627260B2 (en) | Deposition methods | |
| KR19990074809A (en) | Thin Film Manufacturing Method | |
| KR970023689A (en) | Reaction gas injection device for semiconductor chemical vapor deposition device | |
| KR20060021940A (en) | Thin film forming method and thin film forming apparatus | |
| US20220301829A1 (en) | Temperature controlled reaction chamber | |
| US20060251815A1 (en) | Atomic layer deposition methods | |
| KR100237822B1 (en) | Cvd for manufacturing semiconductor device | |
| KR101471973B1 (en) | Atomic layer deposition equipment and its control method | |
| KR0164504B1 (en) | A gas injector of lpcvd machine | |
| JP2009203533A (en) | Atomic layer epitaxy apparatus | |
| KR100203052B1 (en) | A cvd apparatus | |
| US7084074B1 (en) | CVD gas injector and method therefor | |
| US5897711A (en) | Method and apparatus for improving refractive index of dielectric films | |
| US6123776A (en) | Gas delivering apparatus for chemical vapor deposition | |
| KR102808629B1 (en) | Gas supply unit and substrate processing apparatus including gas supply unit | |
| KR20020088621A (en) | Gas injector for ALD device | |
| KR0114989Y1 (en) | Gas inlet structure of semiconductor process tube | |
| KR100302584B1 (en) | Tantalum oxide thin film production method | |
| KR100421223B1 (en) | Showerhead for chemical vapor reactor | |
| US5063086A (en) | Vacuum deposition process and apparatus for producing films having high uniformity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20080904 Year of fee payment: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20090913 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20090913 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |