KR0122324B1 - Oxide film forming apparatus of semiconductor device - Google Patents
Oxide film forming apparatus of semiconductor deviceInfo
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- KR0122324B1 KR0122324B1 KR1019940013498A KR19940013498A KR0122324B1 KR 0122324 B1 KR0122324 B1 KR 0122324B1 KR 1019940013498 A KR1019940013498 A KR 1019940013498A KR 19940013498 A KR19940013498 A KR 19940013498A KR 0122324 B1 KR0122324 B1 KR 0122324B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
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- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 웨이퍼의 산화막 형성장치에 관한 것으로서, 산화공정이 진행되는 공정튜브내의 온도와 그 내부로 공급되는 산화가스의 온도, 즉 가열기의 온도차이로 인하여 발생하는 불량의 산화막 형성을 방지하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an oxide film forming apparatus of a wafer, and is to prevent defective oxide film formation caused by a temperature difference between a temperature in a process tube through which an oxidation process is performed and an temperature of an oxidizing gas supplied thereto, that is, a heater. .
본 발명은 기존의 산화가스발생기와 공정튜브간에 또다른 제2산화가스발생기를 설치하고, 제2산화가스발생기의 외주부에는 가열수단 및 냉각수단을, 내부에는 가열수단 및 냉각수단과 접속된 온도감지기를 각각 설치하여 제2산화가스 발생기의 내부온도가 공정튜브내부의 온도와 상이할 경우 온도감지기를 통하여 냉각수단 또는 가열수단을 선택적으로 작동시켜 공정튜브의 내부온도와 제2산화가스 발생기 내부 온도간의 차이를 감소시킬 수 있도록 구성하였다.The present invention provides another second oxidizing gas generator between the existing oxidizing gas generator and the process tube, the heating means and the cooling means in the outer peripheral portion of the second oxidizing gas generator, the temperature sensor connected to the heating means and the cooling means therein When the internal temperature of the second oxidizer generator is different from the temperature inside the process tube, the cooling means or the heating means is selectively operated through a temperature sensor, so that the difference between the internal temperature of the process tube and the internal temperature of the second oxidizer generator It was configured to reduce the.
Description
제1도는 일반적인 게이트 산화막 형성장치의 개략적인 구성도.1 is a schematic configuration diagram of a general gate oxide film forming apparatus.
제2도는 본 발명에 따른 게이트 산화막 형성장치의 구성도.2 is a block diagram of a gate oxide film forming apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 및 10 : 공정튜브 2, 20A 및 20 : 산화가스발생기1 and 10: process tube 2, 20A and 20: oxidizing gas generator
3 및 30 : 가열기 5 및 6, 50 및 60 : 가스공급관3 and 30: heater 5 and 6, 50 and 60: gas supply pipe
80 : 가열수단 90 : 냉각수단80: heating means 90: cooling means
본 발명은 반도체 소자 제조장치에 관한 것으로서, 특히 게이트 산화막의 형성장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to an apparatus for forming a gate oxide film.
반도체 제조공정에서, 웨이퍼 표면에 게이트 전극(Gate Electrode)으로 사용되는 폴리 실리콘층을 형성하기 전에 산화막(Gate Oxide Film)을 형성시켜야 하며, 공정튜브(Process Tube)에 웨이퍼를 위치시킨 후, 고온의 산화 가스(O2+H2/N2C)를 공정튜브내로 주입시킴으로서 웨이퍼 표면에 게이트 산화막이 형성되어진다.In the semiconductor manufacturing process, before forming a polysilicon layer used as a gate electrode on the wafer surface, a gate oxide film must be formed, and after placing the wafer in a process tube, A gate oxide film is formed on the wafer surface by injecting oxidizing gas (O 2 + H 2 / N 2 C) into the process tube.
일반적인 산화막 형성장치에 대하여 설명하면, 제1도는 일반적인 게이트 산화막 형성장치의 개략적인 구성도로서, 웨이퍼가 위치되어지는 공정튜브(1) 서단에는 산화가스발생기(2) 및 가열기(3)가 순차적으로 설치되어 있으며, 가열기(4) 외주면에는 가열수단(4)인 히터가 설치되어 있다. O2가스를 공급하는 제1가스공급관(5)은 가열기(3)내에 H2/N2C 가스를 공급하는 제2가스공급관(6)은 가열기(3)를 거쳐 산화가스발생기(2) 내부에 위치하게 된다.Referring to a general oxide film forming apparatus, FIG. 1 is a schematic configuration diagram of a general gate oxide film forming apparatus, in which an oxidizing gas generator 2 and a heater 3 are sequentially formed at the end of a process tube 1 in which a wafer is placed. The heater which is a heating means 4 is provided in the outer peripheral surface of the heater 4. The first gas supply pipe (5) for supplying O 2 gas is the second gas supply pipe (6) for supplying H 2 / N 2 C gas into the heater (3) through the heater (3) inside the oxidizing gas generator (2) It is located at.
각 가스공급관(5 및 6)을 통하여 O2가스와 H2/N2C 가스를 각각 가열기(3)와 산화가스발생기(2) 내부에 공급하면, 각 가스는 가열기(3)에 의하여 가열된 상태로 산화가스발생기(2) 내부에서 혼합되어 산화가스화되며, 이후 공정튜브(1) 내부로 공급되어진다.When the O 2 gas and the H 2 / N 2 C gas are respectively supplied into the heater 3 and the oxidizing gas generator 2 through the gas supply pipes 5 and 6, each gas is heated by the heater 3. It is mixed in the oxidizing gas generator 2 in the state to be oxidized gas, and then supplied into the process tube (1).
웨이퍼가 위치되는 공정튜브(1)내부는 산화가스발생기(2)와의 거리에 따라 제1, 제2 및 제3위치(a,b 및 c)로 구분되어지며, 산화막 형성공정은 크게 가열기(2)를 예열시키고 각 가스의 공급상태를 점검하는 준비단계와, 웨이퍼를 위치시킨 후 산화가스에 의한 본 공정을 실시하는 산화공정단계로 구분된다.The inside of the process tube (1) where the wafer is located is divided into first, second and third positions (a, b and c) according to the distance from the oxidizer gas generator (2). ) Is pre-heated and the supply state of each gas is checked, and an oxidation process step of carrying out this process by oxidizing gas after placing a wafer is performed.
표 1에서는 상술한 각 단계에서의 공정튜브(1)내의 각 위치(a,b 및 c) 및 가열기(3)내부의 온도측정결과를 나타낸다.Table 1 shows the temperature measurement results in the respective positions (a, b and c) in the process tube (1) and the heater (3) in each step described above.
표 1에서 알수있는 바와 같이, 산화공정단계시 공정튜브(1)내로 주입된 산화가스에 의한 웨이퍼의 산화는 700-800℃의 온도하에서 진행되나, 산화가스발생기(2)내로 공급되는 산화가스(가열기내부의 온도)는 900℃ 이상의 온도를 유지한다.As can be seen from Table 1, the oxidation of the wafer by the oxidizing gas injected into the process tube 1 during the oxidation process step proceeds at a temperature of 700-800 ° C., but the oxidizing gas supplied into the oxidizing gas generator 2 ( Temperature inside the heater) maintains a temperature of 900 ° C or more.
따라서, 산화공정이 진행되는 공정튜브(1)내의 온도와 공정튜브(1)내로 주입되는 산화가스의 온도차이(100℃ 이상)로 인하여 웨이퍼 전면적에 걸쳐 두께가 고르지 못한 산화막이 형성될 수 있어 전체적으로 균일한 두께의 산화막을 형성하기 어렵게 된다.Therefore, an oxide film having an uneven thickness may be formed over the entire wafer surface due to a temperature difference (100 ° C. or more) between the temperature in the process tube 1 and the oxidation gas injected into the process tube 1 in which the oxidation process is performed. It becomes difficult to form an oxide film of uniform thickness.
특히, 얇은상태의 산화막(Thin Oxide Film)을 형성하고자 할 경우에는 상기 문제점이 더큰 요인으로 적용하게 된다.In particular, in the case of forming a thin oxide film (Thin Oxide Film), the problem is applied as a larger factor.
본 발명은 공정튜브내의 온도와 그 내부로 공급되는 산화가스의 온도, 즉 가열기의 온도차이로 인하여 발생하는 불량의 산화막 형성을 방지하기 위한 것으로서, 공정튜브내의 온도와 가열기 내부온도(공정튜브내로 공급되는 산화가스의 온도)를 큰차이없이 유지할 수 있도록 구성한 산화막 형성장치를 제공하는데 그 목적이 있다.The present invention is to prevent the formation of defective oxide film caused by the temperature of the process tube and the temperature of the oxidizing gas supplied to the inside, that is, the temperature difference of the heater, the temperature in the process tube and the internal temperature of the heater (supply into the process tube It is an object of the present invention to provide an oxide film forming apparatus configured to be able to maintain the temperature of an oxidizing gas to be maintained without significant difference.
상술한 목적을 실현하기 위한 본 발명은 기존의 산화가스발생기와 공정튜브간에 또다른 제2산화가스발생기를 설치하고, 제2산화가스발생기의 외주부에는 가열수단 및 냉각수단을, 내부에는 가열수단 및 냉각수단과 접속된 온도감지기를 각각 설치하여 제2산화가스발생기의 내부온도가 공정튜브내부의 온도보다 높거나 낮을 경우 온도감지기를 통하여 냉각수단 또는 가열수단을 작동시켜 공정튜브의 내부온도와 제2산화가스발생기 내부온도간의 차이를 감소시킬 수 있도록 구성하였다.The present invention for realizing the above object is to install another second oxidizing gas generator between the existing oxidizing gas generator and the process tube, the heating means and cooling means in the outer peripheral portion of the second oxidizing gas generator, the heating means and If the internal temperature of the second oxidizer is higher or lower than the temperature inside the process tube by installing a temperature sensor connected to the cooling means, operate the cooling means or the heating means through the temperature sensor to operate the internal temperature and the second oxidation of the process tube. It is configured to reduce the difference between the internal temperature of the gas generator.
이하, 본 발명을 첨부한 도면을 참고하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings of the present invention will be described in detail.
제2도는 본 발명에 따른 게이트 산화막 형성장치의 구성도로서, 본 발명의 구성부재는 제1도에 도시된 일반적인 산화막 형성장치의 주요구성부재와 유사하나, 가장 큰 차이점은 가열기(30)와 공정튜브(10) 사이에 제1산화가스발생기(20A)와 제2산화가스 발생기(20B)를 설치한 점이다.2 is a block diagram of the gate oxide film forming apparatus according to the present invention. The constituent members of the present invention are similar to the main components of the general oxide film forming apparatus shown in FIG. 1, but the biggest difference is the heater 30 and the process. The first oxidizing gas generator 20A and the second oxidizing gas generator 20B are provided between the tubes 10.
상세히 설명하면, 웨이퍼가 위치되어지는 공정튜브(10)선단에는 가열기(40) 및 제1산화가스발생기(20A), 제2산화가스발생기(20B)가 순차적으로 설치되며, 가열기(30)외주면에는 가열수단(40)인 히터가 설치되어 있다. O가스를 공급하는 제1가스공급관(50)은 가열기(30)내에 H/NC 가스를 공급하는 제2가스공급관(60)은 가열기(30)를 거쳐 제1산화가스발생기(20A) 내부에 위치하게 된다.In detail, the heater 40, the first oxidizer gas generator 20A, and the second oxidizer gas generator 20B are sequentially installed at the front end of the process tube 10 where the wafer is located, and the outer circumferential surface of the heater 30 is provided. The heater which is a heating means 40 is provided. The first gas supply pipe 50 for supplying the O gas is located in the first oxidizing gas generator 20A via the heater 30, and the second gas supply pipe 60 for supplying the H / NC gas in the heater 30 is provided. Done.
각 가스공급관(50,60)을 통하여 O가스와 H/NC 가스를 각각 가열기(40)와 제1산화가스발생기(20A)내부에 공급하면, 각 가스는 가열기(30)에 의하여 가열된 상태로 제1산화가스발생기(20A) 내부에서 혼합되어 산화가스되며, 이후 제2산화가스발생기(20B)를 통하여 공정튜브(10)내부로 공급되어진다.When the O gas and the H / NC gas are supplied into the heater 40 and the first oxidizing gas generator 20A through the gas supply pipes 50 and 60, respectively, the gases are heated by the heater 30. The mixture is oxidized gas in the first oxidizing gas generator 20A, and is then supplied into the process tube 10 through the second oxidizing gas generator 20B.
한편, 제2산화가스발생기(20B)의 외주부에는 가열수단(80)인 히터가 설치됨과 동시에 순환되는 냉각수를 이용한 냉각수단(90)이 설치된다. 또한, 제2산화가스발생기(20B)내부에는 외주부의 가열수단(80) 및 냉각수단(90)과 접속된 온도감지기(70)를 설치하여 제2산화가스발생기(70)내부의 온도를 감지하도록 하였다.On the other hand, the outer peripheral portion of the second oxidizing gas generator 20B is provided with a cooling means 90 using a cooling water circulated at the same time as the heater, which is the heating means 80 is installed. In addition, a temperature sensor 70 connected to the heating means 80 and the cooling means 90 of the outer circumference portion is installed inside the second oxidizer generator 20B to sense the temperature inside the second oxidizer generator 70. It was.
이온도감지기(80)는 제2산화가스발생기(20B)의 내부온도가 공정튜브(10)내부의 온도, 즉 산화공정이 이루어지는 최적온도보다 높거나 낮을 경우 그 감지신호를 냉각수단(90) 또는 가열수단(80)의 스위칭부(100)에 전달하므로서 냉각수단(90) 또는 가열수단(80)을 선택적으로 작동시킨다.When the internal temperature of the second oxidizing gas generator 20B is higher or lower than the temperature inside the process tube 10, that is, the optimum temperature at which the oxidation process is performed, the ion detector 80 may cool the detection means 90 or The cooling means 90 or the heating means 80 is selectively operated by transmitting to the switching unit 100 of the heating means 80.
냉각수단(90) 또는 가열수단(80)의 작동으로 인하여 제2산화가스발생기(20B)의 내부온도가 공정튜브(10)내의 온도와 비슷한 상태로 조절되면 온도감지기(70)가 조절된 온도를 감지하여 가열수단(80) 또는 냉각수단(90)을 제어하게 되며, 따라서 제2산화가스발생기(20B)의 내부온도는 공정튜브내의 온도와 비슷하게 유지될 수 있다.When the internal temperature of the second oxidizing gas generator 20B is adjusted to a state similar to the temperature in the process tube 10 due to the operation of the cooling means 90 or the heating means 80, the temperature sensor 70 adjusts the controlled temperature. The sensing means to control the heating means 80 or cooling means 90, so that the internal temperature of the second oxidizer gas generator 20B can be maintained to be similar to the temperature in the process tube.
표 2는 본 발명을 이용하여 산화공정을 실시할때 얻어지는 공정튜브(10) 내부와 제2산화가스발생기(20B)내부의 온도상태를 표시한다.Table 2 shows the temperature state inside the process tube 10 and inside the second oxidizing gas generator 20B obtained when performing the oxidation process using the present invention.
표 2에서 알수있는 바와 같이, 본 발명을 이용하므로서 산화공정 단계시 공정튜브(10)내로 주입된 산화가스에 의한 웨이퍼의 산화는 700-800℃의 온도에서 진행되며, 제2산화가스발생기(20B)내의 온도, 즉 공정튜브(10)내로 주입되어질 산화가스는 공정튜브(10)내부의 온도와 비슷한 750-850℃ 정도의 온도를 유지하게 된다.As can be seen from Table 2, the oxidation of the wafer by the oxidizing gas injected into the process tube 10 during the oxidation process step by using the present invention proceeds at a temperature of 700-800 ℃, the second oxidation gas generator (20B The temperature in the c), that is, the oxidizing gas to be injected into the process tube 10 is maintained at a temperature of about 750-850 ℃ similar to the temperature in the process tube (10).
이와 같이 제2산화가스발생기(20B)에 설치된 온도감지기(70) 및 가열수단(80), 냉각수단(90)에 의하여 제2산화가스발생기(20B) 내부의 온도가 공정튜브(10) 내부의 온도와 유사하게 유지됨으로서 결과적으로 공정튜브(10) 내부에는 균일한 온도를 갖는 산화가스가 공급되어지며, 따라서, 일정한 온도를 갖는 산화가스의 계속적인 공급으로 균일한 상태의 산화막이 형성될 수 있어 소자의 신뢰성을 향상시킬 수 있다.Thus, the temperature inside the second oxidizer gas generator 20B by the temperature sensor 70, the heating means 80, and the cooling means 90 installed in the second oxidizer gas generator 20B is the inside of the process tube 10. As the temperature is maintained similarly, an oxidizing gas having a uniform temperature is supplied into the process tube 10 as a result, and thus, an oxide film having a uniform state can be formed by continuous supply of oxidizing gas having a constant temperature. The reliability of the device can be improved.
특히 얇은 상태의 산화막(Thin Oxide Film)을 형성하는 공정에서의 효과는 더욱 우수하게 나타난다.In particular, the effect in the process of forming a thin oxide film (Thin Oxide Film) is more excellent.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013498A KR0122324B1 (en) | 1994-06-15 | 1994-06-15 | Oxide film forming apparatus of semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940013498A KR0122324B1 (en) | 1994-06-15 | 1994-06-15 | Oxide film forming apparatus of semiconductor device |
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| Publication Number | Publication Date |
|---|---|
| KR960002659A KR960002659A (en) | 1996-01-26 |
| KR0122324B1 true KR0122324B1 (en) | 1997-11-26 |
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| KR1019940013498A Expired - Fee Related KR0122324B1 (en) | 1994-06-15 | 1994-06-15 | Oxide film forming apparatus of semiconductor device |
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