KR100208673B1 - Thin film lightpath modulation device and its fabrication method with large tilt angle - Google Patents

Abstract

Disclosed are a thin film type optical path control device having a plurality of actuating parts and a method of manufacturing the same. The device includes an active matrix including a pad, a protective layer, an etch stop layer, and a plug, and two first actuating portions and one second actuating portion formed together with an 'E' shape on top of the active matrix. Include. The first actuating parts have a first lower electrode, a first deformable layer, and a first upper electrode, and the second actuating part has a second lower electrode, a second deformed layer, and a second upper electrode. The first lower electrode is connected to the second upper electrode, and the first upper electrode is connected to the second lower electrode so that the first actuating parts and the second actuating part are driven in opposite directions. Therefore, the device can increase the light efficiency by driving the mirror at twice the driving angle even in a small area, and can achieve a bright and clear image by improving the contrast.

Description

Thin film type optical path adjusting device having a large driving angle and manufacturing method thereof

The present invention relates to a thin film type optical path control device using AMA (Actuated Mirror Arrays) and a method for manufacturing the same, and particularly to a thin film type optical path control device that can increase the driving angle of the actuating (actuating) even within a limited area. It is about.

An optical path adjusting device or an optical modulator capable of adjusting the light flux may be variously applied to optical communication, image processing, and information display apparatus. In general, such devices are classified into two types according to their optical properties.

One type is a direct view type image display device, such as a CRT (Cathode Ray Tube), and the other type is a projection type image display device, a liquid crystal display (LCD), an AMA, or a deformable mirror device (DMD). And the like. Although the CRT device has excellent image quality, there is a problem that the weight and volume of the device increase and the manufacturing cost increases as the screen is enlarged. On the other hand, the liquid crystal display (LCD) has an advantage in that the optical structure is simple to form a thin layer so that the weight of the device can be reduced and the volume can be reduced. However, the liquid crystal display device is inferior in efficiency to have a light efficiency of 1 to 2% due to the polarized light, the response speed of the liquid crystal material is slow, the inside thereof is easy to overheat. Therefore, an image display device such as AMA or DMD has been developed to solve the above problem. Currently, AMA has a light efficiency of 10% or more, compared to a DMD device having a light efficiency of about 5%.

The AMA is a device that can adjust the luminous flux so that each of the mirrors installed therein reflects the light incident from the light source at a predetermined angle, and the reflected light passes through a slit and is projected onto the screen to form an image. to be. Therefore, the structure and operation principle thereof are simple, and high light efficiency can be obtained compared to a liquid crystal display device or a DMD. In addition, the contrast is improved to obtain a bright and clear image. The mirrors built into the AMA are inclined by the electric field generated in correspondence with the slits. Therefore, the luminous flux incident from the light source is adjusted at a predetermined angle to form an image on the screen. In general, each actuator causes deformation in accordance with the electric field generated by the applied electric image signal and the bias voltage.

When the actuator causes deformation, each of the mirrors mounted on top of the actuator is inclined. Accordingly, the inclined mirrors can reflect light incident from the light source at a predetermined angle. Piezoelectric materials such as PZT (Pb (Zr, Ti) O ₃ ), or PLZT ((Pb, La) (Zr, Ti) O ₃ ) are used as actuators for driving the respective mirrors. In addition, the actuator can be configured as a warping material such as PMN (Pb (Mg, Nb) O ₃ ).

The optical path control device using AMA is largely classified into a bulk type and a thin film type. The bulk optical path control device is disclosed in, for example, US Patent Nos. 5,085,497 (issued to Gregory Um, et al.), 5,159,225 (issued to Gregory Um), 5,175,465 (issued to Gregory Um, et al.) And the like. Is disclosed. The bulk optical path control device cuts a thin layer of multilayer ceramic, mounts a ceramic wafer having a metal electrode therein in an active matrix including a transistor, and then processes it by sawing and mirrors on the top. It is done by installation. However, bulk devices require high precision in design and manufacture because the actuators must be separated by a sawing method, and the response speed of the deformation part is slow. Therefore, a thin film type optical path control apparatus that can be manufactured using a semiconductor manufacturing process has been developed.

Such a thin film type optical path control device is disclosed in Korean Patent Application No. 96-52684 (name of the invention: thin film type optical path control device having a large driving angle and a method of manufacturing the same) which is filed by the applicant with the Korean Patent Office.

1 is a plan view of a thin film type optical path adjusting device described in the preceding application, FIG. 2 is a sectional view taken along line AA ′ of the device shown in FIG. 1, and FIG. 3 is a view of the device shown in FIG. 1. A cross-sectional view taken along line BB ′ is shown.

Referring to FIG. 1, the thin film type optical path adjusting device includes an active matrix 1 having a pad formed on one side thereof, a first actuator 21 formed on a center of the active matrix 1, and both sides of the active matrix 1. It includes two second actuating parts (37) 39 formed integrally with the first actuating part (21). 2 and 3, the same reference numerals are used for the same members as in FIG.

1 and 2, the active matrix 1 may include a pad 3 formed on one side of the active matrix 1, and a protective layer stacked on the active matrix 1 and the pad 3. 5), the anti-etching layer 7 stacked on the protective layer 5, and the pad (3) from the etch stop layer (7) in the portion where the pad (3) is formed below the etch stop layer (7) It includes a plug 11 formed vertically.

The first actuating part 21 is in contact with the etch stop layer 7 and the plug 11, one side of which is formed with a pad 3 below, and the other side of the first actuating part 21 via the first air gap 13. 7, a first lower electrode 15 formed in parallel with the first lower electrode 15, a first strained layer 17 stacked on the first lower electrode 15, and a first layer stacked on the first strained layer 17. The upper electrode 19 is included. In addition, the first actuating part 21 may include two parts electrically connecting a portion of the second upper electrode 35 formed on one side of the first actuating part 21 and the first lower electrode 15 to each other. First via contacts 27 and 29. The support 51 contacts the upper portion of the first upper electrode 19, and mirrors 51 are formed such that both sides thereof are parallel to the first upper electrode 19 through the second air gap 49.

Referring to FIG. 3, each of the second actuating parts 37 and 39 may include a second lower electrode 31 integrally formed with the first lower electrode 15 of the first actuating part 21, On one side of the portion where the first actuating part 21 and the second actuating parts 37, 39 are connected to the first upper electrode 19 of the first actuating part 21 and the One side of the second deformable layer 33 formed on the second lower electrode 31 and the other side of the portion where the first actuator 21 and the second actuators 37 and 39 are connected. The second upper electrode 35 which is in contact with the first lower electrode 15 of the first actuating part 21 through the first via contact 27 and is stacked on the second deforming layer 33. It includes. The second lower electrode 31, the second deformable layer 33, and the second upper electrode 35 of the second actuating parts 37 and 39 are respectively the first lower part of the first actuating part 21. The members 15 are integrally formed with the electrode 15, the first strained layer 17, and the first upper electrode 19. In addition, the second actuating parts 37 and 39 electrically connect the first upper electrode 19 and the second lower electrode 31 formed on the second actuating parts 37 and 39, respectively. Two second via contacts 45 and 47 that connect to each other.

Hereinafter, a method of manufacturing the thin film type optical path adjusting device described in the preceding application will be described with reference to the drawings.

4 to 7B are manufacturing process diagrams of the apparatus shown in FIGS. 2 and 3, and FIG. 7C is a plan view of the apparatus shown in FIGS. 7A and 7B.

Referring to FIG. 4, a silicate glass (Phospho−) is formed on the top of the active matrix 1 in which M × N (M and N are integers) transistors (not shown) are formed and a pad 3 is formed on one side. A protective layer 5 made of Silicate Glass: PSG is laminated. The protective layer 5 is formed to have a thickness of about 1.0 to about 2.0 μm using a chemical vapor deposition (CVD) method. The protective layer 5 prevents the active matrix 1 from being damaged by the subsequent process.

An etch stop layer 7 made of nitride is stacked on the passivation layer 5. The etch stop layer 7 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (Low Pressure CVD) method. The etch stop layer 7 prevents the protective layer 5 and the active matrix 1 from being etched during the subsequent etching process. Subsequently, after the patterned portion of the etch stop layer 7 in which the pad 3 is formed, the plug 11 is formed. The plug 11 is formed vertically from the etch stop layer 7 to the pad 3 using tungsten, platinum or the like by a lift-off method. Therefore, the image signal is transmitted from the transistor embedded in the active matrix 1 to the first lower electrode 15 of the first actuating part 21 through the pad 3 and the plug 11.

The sacrificial layer 9 is stacked on the etch stop layer 7 and the plug 11. The sacrificial layer 9 is formed so that the silicate glass PSG has a thickness of about 1.0 to about 2.0 μm using an atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD) method. In this case, since the sacrificial layer 9 covers the upper portion of the active matrix 1 in which the transistor is embedded, the flatness of the surface thereof is very poor. Therefore, the surface of the sacrificial layer 9 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method. After planarizing the surface of the sacrificial layer 9, a portion of the sacrificial layer 9 is etched to expose a portion in which the plug 11 is formed below the etch stop layer 7.

5A is a manufacturing process diagram of the first actuating part 21, and FIG. 5B is a manufacturing process diagram of the second actuating parts 37 and 39. FIG. 5C shows a plan view of the first actuating part 21 and the second actuating parts 37 and 39 shown in FIGS. 5A and 5B.

Referring to FIGS. 5A to 5C, lower electrodes are stacked on the sacrificial layer 9 by using a metal such as platinum or tantalum (Ta) to have a thickness of about 500 to 2000 μs using a sputtering method. Subsequently, as shown in FIG. 5C, the lower electrode is patterned to have an 'E' shape to form the first lower electrode 15 and the second lower electrode 31.

FIG. 6A is a manufacturing process diagram of the first actuating portion 21, and FIG. 6B is a manufacturing process diagram of the second actuating portions 37 and 39, and FIG. 6C is a first actuating portion shown in FIGS. 6A and 6B. The top view of the acting part 21 and the 2nd actuating parts 37 and 39 is shown.

6A through 6C, a first strained layer 17 and a second strained layer 33 are stacked on top of the first lower electrode 15 and the second lower electrode 31, respectively. The first strained layer 17 and the second strained layer 33 are laminated using a piezoelectric material such as ZnO so as to have a thickness of 0.1 to 1.0 mu m, preferably about 0.4 mu m. The first strained layer 17 and the second strained layer 33 are formed using a sol-gel method or a chemical vapor deposition (CVD) method, and then rapid thermal annealing (RTA). Phase change by heat treatment using the method. Subsequently, as shown in FIG. 6C, the first strained layer 17 of the first actuating part 21 and the second strained layer 33 of the second actuating parts 37 and 39 are patterned. . The first strained layer 17 and the second strained layer 33 are formed in the same shape as the 'E' shape of the first lower electrode 15 and the second lower electrode 31, respectively. The first upper electrode 19 and the second upper electrode 35 are formed on the first strained layer 17 and the second strained layer 33. The first upper electrode 19 and the second upper electrode 35 are formed of a metal having excellent electrical conductivity such as aluminum or silver so as to have a thickness of about 500 to 2000 mW using a sputtering method. Subsequently, as illustrated in FIG. 6C, the first upper electrode 19 and the second upper electrode 35 are patterned. One side of the first upper electrode 19 of the first actuating part 21 is 'T' toward the portion where the first actuating part 21 and the second actuating parts 37 and 39 are connected. It is patterned to have a shape of extending the arm in the shape of a child. In addition, the second upper electrode 35 of the second actuating parts 37 and 39 may have a shape surrounding the 'T' in a mirror-shaped 'A' shape around the center of the 'T'. Is patterned.

7A is a manufacturing process diagram of the first actuating portion 21, FIG. 7B is a manufacturing process diagram of the second actuating portions 37 and 39, and FIG. 7C is a plan view of the apparatus shown in FIGS. 7A and 7B. It is shown.

Referring to FIG. 7A, the first actuating part 21 may include a second from the second upper electrode 35 formed on one side of the first actuating part 21 to the upper part of the first lower electrode 15. The upper electrode 35 and the first strained layer 17 are sequentially etched to form two first via holes 23 and 25. Subsequently, two first via contacts 27 and 29 are electrically connected to the second upper electrode 35 and the first lower electrode 15 by sputtering a metal such as tungsten or titanium. ).

Referring to FIG. 7B, the second actuating parts 37 and 39 are formed from the first upper electrode 19 formed on the second actuating parts 37 and 39 from the second lower electrode 31. The first upper electrode 19 and the second deformable layer 33 are sequentially etched to the upper portion of the second via hole 41 to form the second via holes 41 and 43, respectively. Subsequently, second via contacts 45 and 47 are formed to electrically connect the first upper electrode 19 and the second lower electrode 31 by sputtering a metal such as tungsten or titanium. Accordingly, the first lower electrode 15 of the first actuating part 21 is connected to the second upper electrode 35 of the second actuating parts 37 and 39 through the first via contacts 27 and 29. ), The first upper electrode 19 of the first actuating part 21 is connected to the second lower part of the second actuating parts 37, 39 through the second via contact 45, 47. It is connected to the electrode 31. As a result, the image signal is applied to the first lower electrode 15 and the second upper electrode 35 from the transistor embedded in the active matrix 1, and the bias voltage is applied to the first upper electrode 19 and the second lower electrode. Is applied to (31). Therefore, an electric field generated in the opposite direction is generated between the electric field generated between the first upper electrode 19 and the first lower electrode 15 and the second upper electrode 35 and the second lower electrode 31.

Subsequently, a mirror 51 is formed on the first upper electrode 19 of the first actuating part 21. The mirror 51 is formed of a metal such as aluminum or platinum so as to have a thickness of about 500 to 1000 mm by using a conventional photolithography method and sputtering method. The mirror 51 has a central portion in contact with an upper portion of one side of the first upper electrode 19, and both sides thereof are formed parallel to the first upper electrode 19 via a second air gap 49. The mirror 51 has a central portion protruding downward, and has a shape of a flat plate contacting an upper portion of the first upper electrode 19, and one side of the mirror 51 covers the first upper electrode 19, and the other side is adjacent to the actuator. It is formed to cover part of the portion. The first actuating part 21 and the second actuating parts 37 and 39 are formed by etching the sacrificial layer 9 with hydrogen fluoride (HF) vapor to form a first air gap 13. To complete.

In the above-described thin film type optical path adjusting device, an image signal is applied to the first lower electrode 15 from a transistor embedded in the active matrix 1, and a bias voltage is applied to the first upper electrode 19. Therefore, an electric field is generated between the first upper electrode 19 and the first lower electrode 15. By this electric field, the first strained layer 17 between the first upper electrode 19 and the first lower electrode 15 causes deformation. The first deforming layer 17 contracts in a direction perpendicular to the electric field, and thus the first actuating part 21 is bent at a driving angle having a size of θ. At the same time, a bias voltage is applied from the first upper electrode 19 of the first actuating part 21 to the second lower electrode 31 of each of the second actuating parts 37 and 39. In addition, an image signal is applied to the second upper electrode 35 of each of the second actuating parts 37 and 39 from the first lower electrode 15 of the first actuating part 21. Therefore, between the first upper electrode 19 and the first lower electrode 15 between the second upper electrode 35 and the second lower electrode 31 of each of the second actuating parts 37 and 39. A reverse electric field is generated for the electric field. Accordingly, the second deformable layer 33 is contracted so that each of the second actuating parts 37 and 39 is bent in the opposite direction to the first actuating part 21 with a driving angle of θ. That is, the sum of the driving angles of the first actuating part 21 and the second actuating parts 37 and 39 is 2θ. Since the mirror 51 reflecting the light beam is provided on the upper part of the first actuating part 21, the mirror 51 is inclined with a driving angle of 2θ.

However, in the above-described thin film type optical path adjusting device, only a part of the upper electrode is driven to reflect the light beam, so that the driving angle is reduced and the light efficiency is lowered. In addition, since the displacement of the actuator by the deformable portion is small, there is a problem that the contrast is lowered because the driving angle of the upper electrode which performs the function of the mirror is small.

Accordingly, an object of the present invention is to provide a thin film type optical path control apparatus and a method of manufacturing the same, which can increase the driving angle of an actuator even within a small area.

1 is a plan view of a thin film type optical path adjusting device described in the applicant's prior application.

FIG. 2 is a cross-sectional view taken along line A′A ′ of the apparatus shown in FIG. 1.

FIG. 3 is a cross-sectional view of the device shown in FIG. 1 taken along line B′B ′.

4 to 7B are manufacturing process diagrams of the apparatus shown in FIGS. 2 and 3.

FIG. 7C is a plan view of the apparatus shown in FIGS. 7A and 7B.

8 is a plan view of a thin film type optical path control apparatus according to the present invention.

9 is a cross-sectional view taken along line C′C ′ of the apparatus shown in FIG. 8.

FIG. 10 is a cross-sectional view taken along line D′ D ′ of the apparatus shown in FIG. 8.

11-14B are manufacturing process diagrams of the apparatus shown in FIG. 9 and FIG.

14C is a plan view of the apparatus shown in FIGS. 14A and 14B.

<Explanation of symbols for main parts of drawing>

131 ： Active matrix 133 ： Pad

135: protective layer 137: etching prevention layer

139: Sacrifice 141a, 141b: Plug

143: first air gap 145: first lower electrode

147: first strained layer 149: first upper electrode

151a and 151b: 1st actuating part 153a and 153b: 1st via hole

155a and 155b: first via contact 157: second lower electrode

159: second strained layer 161: second upper electrode

163: 2nd actuating part 165: 2nd via hole

167a and 167b: second via contact 169: second air gap

171 ： mirror 173: iso­cut

In order to achieve the above object, the present invention,

An active matrix having M × N (M, N is an integer) transistors and pads formed on one side thereof;

Iii) a first lower electrode formed on one side of the upper side of the active matrix and the other side of the active matrix parallel to the active matrix via a first air gap, a first strained layer formed on the first lower electrode, and the Two first actuating parts including a first upper electrode formed on the first deforming layer; And

Ii) a second lower electrode integrally formed with the first lower electrode on the center of the active matrix so as to be parallel to the active matrix, a second strained layer formed on the second lower electrode, and the second strained layer; Provided is a thin film type optical path control device having a second upper electrode formed on the upper part and including a second actuator formed integrally with the first actuators.

In addition, the present invention to achieve the above object,

Forming a pad on one side of an active matrix having M × N (M, N is an integer) transistors;

Iii) forming a first lower electrode such that one side is in contact with the upper sides of the active matrix and the other side is parallel to the active matrix via a first air gap; and a first strained layer is formed on the first lower electrode. Forming two first actuating parts including forming a first upper electrode on the first strained layer; And

Ii) forming a second lower electrode integrally with the first lower electrode on a center upper portion of the active matrix to be parallel to the active matrix, forming a second strained layer on the second lower electrode, and It provides a method of manufacturing a thin film type optical path control device comprising the step of forming a second actuating portion comprising the step of forming a second upper electrode on the second deforming layer.

In the above-described thin film type optical path adjusting device, an image signal generated from a transistor embedded in an active matrix is applied to a first lower electrode of each of the first actuators, and a bias voltage is applied to the first upper electrode. . Therefore, an electric field is generated between the first upper electrode and the first lower electrode. By this electric field, the first strained layer stacked between the first upper electrode and the first lower electrode causes deformation. The first strained layer contracts in a direction perpendicular to the electric field, whereby each of the first actuating parts is bent at a driving angle of θ. At the same time, a bias voltage is applied to the second lower electrode of the second actuating part from the first upper electrode of the first actuating parts. In addition, an image signal is applied to the second upper electrode of the second actuating part from the first lower electrode of the first actuating parts. Therefore, a reverse electric field is generated between the second upper electrode and the second lower electrode of the second actuating part, which is opposite to the direction of the electric field of the first actuating parts. Accordingly, the second deforming layer contracts and the second actuating part is bent in a direction opposite to the first actuating parts with a driving angle having a magnitude of θ. That is, the sum of the driving angles of the first actuating parts and the second actuating parts is 2θ. Since the mirror reflecting the light beam is provided on the upper part of the second actuating part, the mirror is inclined with a driving angle of 2θ.

Therefore, the thin film type optical path adjusting device according to the present invention can drive the actuator at twice the driving angle as compared with the optical path adjusting device described in the preceding application even within a narrow area. Therefore, the light efficiency of the light beam incident from the light source can be improved, and the contrast can be improved to form a brighter and clearer image.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 8 is a plan view showing a thin film type optical path adjusting device according to the present invention, FIG. 9 is a sectional view taken along line CC ′ of the device shown in FIG. 8, and FIG. 10 is a DD of the device shown in FIG. 8. It shows a cross-sectional view cut in line.

Referring to FIG. 8, the thin film type optical path adjusting device according to the present invention includes an active matrix 131 having a pad 133 formed on one side thereof and two first actuating units 151a formed on both sides of the active matrix 131. 151b and a second actuating part 163 integrally formed with the first actuating parts 151a and 151b on the center of the active matrix 131. 9 and 10, the same reference numerals are used for the same members as in FIG.

8 and 9, the active matrix 131 may include a pad 133 formed on one side of the active matrix 131, a protective layer stacked on the active matrix 131 and the pad 133. 135, the pad 133 from the etch stop layer 137 in a portion of the etch stop layer 137 stacked on the protective layer 135, and the pad 133 is formed below the etch stop layer 137. It includes a plug 141a, 141b vertically formed.

Each of the first actuating parts 151a and 151b is in contact with the etch stop layer 137 and the plugs 141a and 141b on which one side of the first actuating portion 151a and 151b is formed, and the other side of the first air gap 143 is formed. ) A first lower electrode 145 formed in parallel with the etch stop layer 137, a first strained layer 147 stacked on the first lower electrode 145, and the first strained layer 147. It includes a first upper electrode 149 stacked on the top. In addition, each of the first actuating parts 151a and 151b is a part of the second upper electrode 161 and the first lower electrode formed on one side of the first actuating parts 151a and 151b, respectively. Two first via contacts 155a and 155b that electrically connect 145.

Referring to FIG. 10, the second actuating part 163 may include a second lower electrode 157 integrally formed with the first lower electrode 145 of the first actuating parts 151a and 151b, and The first upper electrode 149 of the first actuating parts 151a and 151b at one side of the portion where the first actuating parts 151a and 151b and the second actuating part 163 are connected. The second deformable layer 159 formed on the second lower electrode 157 and in contact with the first actuating parts 151a and 151b and the second actuating part 163. On the other side, one side contacts the first lower electrode 145 of the first actuating parts 151a and 151b through the first via contact 155a and 155b and the upper portion of the second deformable layer 159. It includes a second upper electrode 161 stacked on. The second lower electrode 157, the second deformable layer 159, and the second upper electrode 161 of the second actuating part 163 are formed on the first lower electrode of the first actuating parts 151a and 151b. 145, the first deformable layer 147, and the first upper electrode 149. In addition, the second actuator 163 may include two second via contacts electrically connecting the first upper electrode 149 and the second lower electrode 157 formed on the second actuator 163. 167a and 167b. The support part contacts the upper portion of the second upper electrode 161 and the mirror 171 is formed such that both sides thereof are parallel to the second upper electrode 161 via the second air gap 169.

Hereinafter, a method of manufacturing a thin film type optical path control apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the drawings.

11 to 14B are manufacturing process diagrams of the apparatus shown in FIGS. 9 and 10, and FIG. 14C shows a plan view of the apparatus shown in FIGS. 14A and 14B.

Referring to FIG. 11, a silicate glass (Phospho-) is formed on the top of an active matrix 131 in which M × N (M and N are integers) transistors (not shown) are formed and a pad 133 is formed on one side. A protective layer 135 made of Silicate Glass (PSG) is laminated. The protective layer 135 is formed to have a thickness of about 0.1 to 1.0 μm using a chemical vapor deposition (CVD) method. The protective layer 135 prevents the active matrix 131 from being damaged due to a subsequent process.

An etch stop layer 137 made of nitride is stacked on the passivation layer 135. The etch stop layer 137 is formed to have a thickness of about 1000 to 2000 kPa using a low pressure chemical vapor deposition (Low Pressure CVD) method. The etch stop layer 137 prevents the protective layer 135 and the active matrix 131 from being etched during the subsequent etching process. Subsequently, after the patterned portion of the etch stop layer 137 in which the pad 133 is formed, the plugs 141a and 141b are formed. The plugs 141a and 141b are vertically formed from the etch stop layer 137 to the pad 133 by using a lift-off method of tungsten or platinum. Therefore, the image signal is respectively applied to the first lower electrode 145 of the first actuating parts 151a and 151b through the pad 133 and the plugs 141a and 141b from the transistor embedded in the active matrix 131. Delivered.

The sacrificial layer 139 is stacked on the etch stop layer 137 and the plugs 141a and 141b. The sacrificial layer 139 may be formed of an atmospheric pressure chemical vapor deposition (Atmospheric Pressure CVD) method, a sputtering method, an evaporation method, or the like, in which silicate glass (PSG), metal, oxide, or the like is used. It forms so that it may have thickness of about 0.5-5.0 micrometers. In this case, since the sacrificial layer 139 covers the upper portion of the active matrix 131 in which the transistor is embedded, the flatness of the surface thereof is very poor. Accordingly, the surface of the sacrificial layer 139 is planarized by using a spin on glass (SOG) method or a chemical mechanical polishing (CMP) method. After planarizing the surface of the sacrificial layer 139, a portion of the sacrificial layer 139 is etched to expose a portion of the etch stop layer 137 having the plugs 141a and 141b formed below.

12A is a manufacturing process diagram of the first lower electrode 145, and FIG. 12B is a manufacturing process diagram of the second lower electrode 157. 12C illustrates a plan view of the first lower electrode 145 and the second lower electrode 157 shown in FIGS. 12A and 12B.

Referring to FIGS. 12A to 12C, a metal such as platinum or tantalum (Ta) is used on the sacrificial layer 139 to obtain 0.1-1. Lower electrodes are stacked to have a thickness of about 0 μm. Subsequently, the lower electrode is patterned to have an 'E' shape to form the first lower electrode 145 and the second lower electrode 157, and then the first lower electrode 145 and the first lower electrode 145 are formed as shown in FIG. 2 In order to short-circuit the image signal applied to the lower electrode 157, two portions connecting the first lower electrode 145 and the second lower electrode 157 are cut to the same width (isocut) (173) The first lower electrode 145 and the second lower electrode 157 are formed in parallel with each other to form a 'three' shape.

FIG. 13A is a manufacturing process diagram of the first actuating parts 151a and 151b, FIG. 13B is a manufacturing process diagram of the second actuating part 163, and FIG. 13C is a first actuating element shown in FIGS. 13A and 13B. A plan view of the gating parts 151a and 151b and the second actuating part 163 is shown.

13A through 13C, a first strained layer 147 and a second strained layer 159 are stacked on top of the first lower electrode 145 and the second lower electrode 163, respectively. The first strained layer 147 and the second strained layer 159 are laminated using a piezoelectric material such as ZnO or PZT so as to have a thickness of 0.1 to 1.0 탆, preferably about 0.4 탆. . The first strained layer 147 and the second strained layer 159 are formed using a sol-gel method, a chemical vapor deposition (CVD) method, or a sputtering method, and then rapid heat treatment. Phase change by heat treatment using Rapid Thermal Annealing (RTA) method. Subsequently, as illustrated in FIG. 13C, the first strained layer 147 of the first actuating parts 151a and 151b and the second strained layer 159 of the second actuating part 163 are patterned. . The first strained layer 147 and the second strained layer 159 are integrally formed in an 'E' shape. The first upper electrode 149 and the second upper electrode 161 are formed on the first strained layer 147 and the second strained layer 159. The first upper electrode 149 and the second upper electrode 161 are made of 0.1 to 1 by using a sputtering method of a metal having excellent electrical conductivity such as aluminum or silver. It is formed to have a thickness of about 0㎛. Subsequently, as illustrated in FIG. 13C, the first upper electrode 149 and the second upper electrode 161 are patterned. One side portion of the second upper electrode 161 of the second actuating part 163 is 'T' toward the portion where the first actuating parts 151a and 151b are connected to the second actuating part 163. It is patterned to have a shape of extending the arm in the shape of a child. In addition, the first upper electrode 149 of the first actuating parts 151a and 151b has a shape surrounding the 'T' in a mirror-shaped 'B' shape around the center of the 'T'. Is patterned.

14A to 14C, the first actuating parts 151a and 151b are formed from the second upper electrode 161 formed on one side of the first actuating parts 151a and 151b. The second upper electrode 161 and the first deformable layer 147 are sequentially etched to the upper portion of the first lower electrode 145 to form two first via holes 153a and 153b, respectively. Subsequently, two first via contacts 155a and 155b are electrically connected between the second upper electrode 161 and the first lower electrode 145 by sputtering a metal such as tungsten or titanium. ), Respectively.

The second actuating part 163 may include the first upper electrode 149 and the second upper part 149 from the first upper electrode 149 formed on the second actuating part 163 to the upper part of the second lower electrode 157. The strained layer 159 is sequentially etched to form second via holes 165a and 165b. Subsequently, second via contacts 167a and 167b are formed to electrically connect the first upper electrode 149 and the second lower electrode 157 by sputtering a metal such as tungsten or titanium. Accordingly, the first lower electrode 145 of the first actuating parts 151a and 151b is connected to the second upper electrode 161 of the second actuating part 163 through the first via contacts 155a and 155b. The first upper electrode 149 of the first actuating parts 151a and 151b is connected to the second lower part of the second actuating part 163 through the second via contacts 167a and 167b. It is connected to the electrode 157. As a result, the image signal is applied to the first lower electrode 145 and the second upper electrode 161 from the transistor embedded in the active matrix 131, and the bias voltage is applied to the first upper electrode 149 and the second lower electrode. Is applied to 157. Therefore, an electric field generated in the opposite direction is generated between the electric field generated between the first upper electrode 149 and the first lower electrode 145 and the second upper electrode 161 and the second lower electrode 157.

Subsequently, a mirror 171 is formed on the second upper electrode 161 of the second actuating part 163. The mirror 171 uses a metal such as aluminum, platinum, or the like by using a conventional photolithography method, sputtering method, evaporation method, or the like. It is formed to have a thickness of about 0㎛. The mirror 171 has a central portion in contact with an upper portion of one side of the second upper electrode 161, and both sides thereof are formed in parallel with the second upper electrode 161 via a second air gap 169. The mirror 171 has a shape of a flat plate whose center portion is in contact with an upper portion of one side of the second upper electrode 161, and one side covers the second upper electrode 161, and the other side covers a portion of an adjacent actuator. It is formed to. The first actuating parts 151a, 151b and the second actuating part 163 are formed by etching the sacrificial layer 139 with hydrogen fluoride (HF) vapor to form a first air gap 143. To complete.

In the above-described thin film type optical path adjusting device, an image signal is applied to the first lower electrode 145 from a transistor embedded in the active matrix 131, and a bias voltage is applied to the first upper electrode 149. . Therefore, an electric field is generated between the first upper electrode 149 and the first lower electrode 145. Due to this electric field, the first strained layer 147 between the first upper electrode 149 and the first lower electrode 145 causes deformation. The first deformable layer 147 contracts in a direction perpendicular to the electric field, and thus, each of the first actuating parts 151a and 151b is bent with a driving angle of θ. At the same time, a bias voltage is applied to the second lower electrode 157 of the second actuating part 163 from the first upper electrode 149 of the first actuating parts 151a and 151b. In addition, an image signal is applied to the second upper electrode 161 of the second actuating part 163 from the first lower electrode 145 of the first actuating parts 151a and 151b. Therefore, an electric field generated between the first upper electrode 149 and the first lower electrode 145 between the second upper electrode 161 and the second lower electrode 157 of the second actuating part 163. Reverse electric field occurs. Accordingly, the second deformable layer 159 contracts in a direction parallel to the electric field so that the second actuating part 163 has a driving angle having a magnitude of θ and is opposite to the first actuating parts 151a and 151b. Bent That is, the sum of the driving angles of the first actuating parts 151a and 151b and the second actuating part 163 is 2θ. Since the mirror 171 reflecting the light beam is installed on the second actuator 163, the mirror 171 is inclined with a driving angle of 2θ.

Therefore, the above-described thin film type optical path adjusting device according to the present invention forms a plurality of actuators driving in opposite directions to each other to drive the mirror at twice the driving angle as compared to the optical path adjusting device described in the preceding application even within a limited area. Can be. Therefore, the light efficiency of the light beam incident from the light source can be increased, and the contrast can be improved to form a clear image.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below. I can understand that you can.

Claims (15)

An active matrix 131 in which M × N (M and N are integer) transistors are formed and a pad 133 is formed on one side; Iv) a first lower electrode 145 and a first lower electrode formed at one side of the upper side of the active matrix 131 to be in contact with the other side and parallel to the active matrix 131 via the first air gap 143. Two first actuating parts 151a including a first strained layer 147 formed on the electrode 145 and a first upper electrode 149 formed on the first strained layer 147. (151b); And Ii) the second lower electrode 157 and the second lower electrode 157 which are integrally formed with the first lower electrode 145 so as to be parallel to the active matrix 131 on the center of the active matrix 131. It has a second strained layer 159 formed thereon, and a second upper electrode 161 formed on the second strained layer 159, integrally with the first actuating parts 151a, 151b. Thin-film optical path control device comprising a second actuating portion (163) formed. The method of claim 1, wherein the active matrix 131 includes a passivation layer 135 formed on the active matrix and the pad 133, an etch stop layer 137 formed on the passivation layer 135, and the Thin film type optical path control device further comprises a plug (141a) (141b) formed vertically to the pad (133) through an etch stop layer (137) and the protective layer (135). The method of claim 1, wherein the two first actuating parts 151a and 151b are formed on both sides of the active matrix 131, and the second actuating part 163 is formed on the active matrix 131. The first actuating parts 151a, 151b and the second actuating part 163 are formed integrally with the first actuating parts 151a and 151b at the center of the upper part. Thin film type optical path control device, characterized in that formed to have an 'E' shape together. The second upper electrode 161 of the second actuating part 163 has one side connected to the first actuating parts 151a and 151b and the second actuating part 163. The first upper electrode 149 of the first actuating parts 151a and 151b has a shape of extending an arm in a 'T' shape toward the portion. The thin film type optical path control device, characterized in that formed to have a shape surrounding the 'T' in the shape of a '. The method of claim 4, wherein the first actuating parts 151a and 151b are formed on top of each of the first actuating parts 151a and 151b from which the second upper electrode 161 extends. A second via formed on an upper portion of the second actuating part 163 from which the first upper electrode 149 extends, including first via contacts 155a and 155b. Thin-film optical path control device further comprises a contact (167a) (167b). The method of claim 1, wherein the first lower electrode 145 is connected to the second upper electrode 161, and the first upper electrode 149 is connected to the second lower electrode 157. Thin film type optical path control device. 2. The second upper electrode 161 of claim 1, wherein a center portion of the second upper electrode 161 is in contact with an upper portion of the second upper electrode 161, and both sides of the second upper electrode 161 are disposed through a second air gap 169. Thin film type optical path control device, characterized in that it further comprises a flat mirror (171) formed in parallel with the). Forming a pad on one side of an active matrix having M × N (M, N is an integer) transistors; Iii) forming a first lower electrode such that one side is in contact with the upper sides of the active matrix and the other side is parallel to the active matrix via a first air gap; and a first strained layer is formed on the first lower electrode. Forming two first actuating parts including forming a first upper electrode on the first strained layer; And Ii) forming a second lower electrode integrally with the first lower electrode on a center upper portion of the active matrix to be parallel to the active matrix, forming a second strained layer on the second lower electrode, and And forming a second actuating part including forming a second upper electrode on the second deforming layer. The method of claim 8, wherein the forming of the lower electrode is performed by cutting two portions connecting the first lower electrode and the second lower electrode to the same width so that the two first lower electrodes and the second lower electrode are separated from each other. A method of manufacturing a thin film type optical path control device, characterized in that formed in parallel to form a 'three' shape. The method of claim 8, wherein the forming of the first actuating parts and the second actuating part comprises: i) forming a protective layer on top of the pad and the active matrix, ii) on top of the protective layer Forming an etch stop layer on the anti-etching layer and the pad through the etch stop layer and the protective layer, and iii) forming a sacrificial layer on top of the etch stop layer and the plug, And patterning the sacrificial layer by etching the portion of the sacrificial layer to expose the plug and the plug. The method of claim 8, wherein the forming of the first actuating parts comprises forming a second upper electrode and a first deformation from the second upper electrode formed on the first actuating parts to the upper part of the first lower electrode, respectively. And sequentially etching the layer to form two first via holes, wherein forming the second actuating part comprises forming a second lower electrode from the first upper electrode formed on the second actuating part. And sequentially etching the first upper electrode and the second deformable layer to an upper portion of the second via hole to form two second via holes. The method of claim 11, wherein the forming of the first actuating portions is performed by electrically connecting the second upper electrode and the first lower electrode by sputtering tungsten or titanium metal in the two first via holes, respectively. And forming two first via contacts to be connected, wherein forming the second actuating portion comprises: forming the first upper contact by using a sputtering method of tungsten or titanium metal in the two second via holes; And forming two second via contacts such that the electrodes and the second lower electrodes are electrically connected to each other. The method of claim 8, wherein the second upper electrode has a central portion in contact with an upper portion of the second upper electrode, and both sides of the second upper electrode form a mirror in a flat plate shape in parallel with the second upper electrode via a second air gap. Method of manufacturing a thin film type optical path control device further comprising. The method of claim 13, wherein the mirror is formed by a sputtering method or an evaporation method using aluminum or silver. The method of claim 8, wherein the forming of the first actuating portions and the forming of the second actuating portion comprise: the first and second upper electrodes, the first and second deformed layers, and the first actuating portion. Patterning the first and second lower electrodes sequentially from the top to form a pixel having a predetermined shape; and cleaning and drying the first and second actuators. The manufacturing method of the thin film type optical path control apparatus.