KR100369347B1 - Method for fabricating coil - Google Patents

Abstract

The present invention relates to a method of manufacturing a coil to prevent an increase in the area of a device and to improve conductance characteristics by separately fabricating an external circuit, and to form a first dielectric film on a semiconductor substrate. Selectively etching to form a semi-cylindrical recess, forming a spiral first metal film pattern on the surface of the semi-cylindrical recess, forming a second dielectric film on the entire surface including the first metal film pattern; Remaining the second dielectric film only on the first metal film pattern, reflowing the remaining second dielectric film to form a cylindrical dielectric film rod on the first metal film pattern, and And forming a spiral second metal film pattern connected to one side of the first metal film pattern.

Description

Manufacturing method of coil {METHOD FOR FABRICATING COIL}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to integrated circuits, and more particularly, to a device requiring a small area, a large conductance, and a manufacturing method of an integrated coil applicable to a communication device.

In general, the coil is not manufactured in an integrated circuit, but manufactured separately to connect to an integrated circuit using a printed circuit board (PCB) to achieve a miniaturization of a device due to a coil occupying a relatively large area. There are many difficulties.

1 is a view illustrating a coil according to the prior art, and is formed by winding a copper wire 12 physically on a dielectric film rod 11.

However, as described above, the coil of the prior art is formed by winding the copper wire 12 on the dielectric film rod 11, which is inevitably very large, and is not formed in the integrated circuit, but formed separately and connected to the integrated circuit. There is a problem that the area is increased.

The present invention has been made to solve the problems of the prior art, an object of the present invention is to provide a method for manufacturing a coil suitable for preventing the increase in the area of the device by manufacturing separately from the integrated circuit.

1 is a view showing a coil according to the prior art,

2A to 2D are cross-sectional views illustrating a method of manufacturing a coil according to an embodiment of the present invention;

3 is a plan view of a coil according to an embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

21 semiconductor substrate 22 dielectric film

22a: semi-cylindrical recess 23, 26: photosensitive film

24: first metal film pattern 25: BPSG

25a: cylindrical BPSG rod 27: second metal film pattern

Method of manufacturing a coil of the present invention for achieving the above object comprises the steps of forming a first dielectric film on a semiconductor substrate, selectively etching the first dielectric film to form a semi-cylindrical recess, the surface of the semi-cylindrical recess Forming a spiral first metal film pattern on the surface, forming a second dielectric film on the entire surface including the first metal film pattern, and leaving the second dielectric film only on the first metal film pattern; Reflowing the remaining second dielectric film to form a cylindrical dielectric film rod on the first metal film pattern, and forming a spiral second metal film pattern connected to one side of the first metal film pattern on the dielectric film bar. Characterized in that it comprises a step.

Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .

2A to 2D illustrate a method of manufacturing a coil according to an exemplary embodiment of the present invention.

As shown in FIG. 2A, after the dielectric film 22 is formed on the semiconductor substrate 21, the photosensitive film 23 is coated on the dielectric film 22, and the photosensitive film 23 is patterned by exposure and development. Subsequently, the dielectric film 22 is wet-etched using the patterned photosensitive film 23 as a mask to form the semi-cylindrical recess 22a.

Here, the dielectric film 22 uses any one of a chemical vapor deposition (CVD) oxide film, a thermal oxide film, or Boro Phospho Silicate Glass (BPSG).

As shown in FIG. 2B, after the patterned photoresist film 23 is removed, a first metal film is deposited on the entire surface, a photoresist film is applied on the first metal film, and the photoresist film is patterned by exposure and development. Subsequently, the first metal film is etched using the patterned photosensitive film as a mask to form the spiral first metal film pattern 24 only on the surface of the semi-cylindrical recess 22a.

Here, the spiral first metal film pattern 24 uses either copper (Cu) or aluminum (Al).

As shown in FIG. 2C, the photoresist film used when the first metal film pattern 24 is formed is removed, and the BPSG 25 is formed on the entire surface. Subsequently, the photoresist film 26 is applied onto the BPSG 25, and the photoresist film 26 is patterned by exposure and development. Then, the BPSG 25 is wet-etched using the patterned photoresist film 26 as a mask. At this time, the BPSG 25 remains only on the first metal film pattern 24 after the wet etching.

As shown in FIG. 2D, the wet etched BPSG 25 is reflowed to form a cylindrical BPSG rod 25a, and then a second metal film is deposited on the entire surface. Subsequently, the second metal film is selectively patterned to form a spiral second metal film pattern 27 connected to one side of the first metal film pattern 24. Here, the second metal film pattern 27 uses either copper or aluminum in the same manner as the first metal film pattern 22.

At this time, the lower first metal film pattern 24 and the upper second metal film pattern 27 have a shape in which a cylindrical BPSG rod 25a is wound. As shown in FIG. 3, the first metal film As the pattern 24 and the second metal film pattern 27 are formed in a spiral shape, one side of the first metal film pattern 24 is connected to one side of the second metal film pattern 27, and the second metal film pattern is connected. The other side of (27) and one side of the other first metal film pattern are connected to form a spiral coil that continues.

Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

The coil manufacturing method of the present invention as described above is manufactured in the integrated circuit using the manufacturing process of the semiconductor device, the cost required to configure the circuit requiring inductance (Inductance) is reduced, the external coil in a single integrated circuit Since there is no need for a large space, there is an effect that can reduce the area of the device applying the coil.

Claims (6)

In the manufacturing method of the coil, Forming a first dielectric film on the semiconductor substrate; Selectively etching the first dielectric layer to form a semi-cylindrical recess; Forming a spiral first metal film pattern on a surface of the semi-cylindrical recess; Forming a second dielectric layer on the entire surface including the first metal layer pattern; Leaving the second dielectric layer only on the first metal layer pattern; Reflowing the remaining second dielectric layer to form a cylindrical dielectric layer rod on the first metal layer pattern; And Forming a spiral second metal film pattern connected to one side of the first metal film pattern on the dielectric film rod Method of manufacturing a coil comprising a. The method of claim 1, And the second dielectric film uses BPSG. The method of claim 1, And the first dielectric film is any one of a CVD oxide film, a thermal oxide film, and a BPSG. The method of claim 1, The first metal film pattern and the second metal film pattern is a coil manufacturing method, characterized in that using any one of copper or aluminum. The method of claim 1, Forming the semi-cylindrical recess, Coating a first photoresist film on the first dielectric film and patterning the photoresist film by exposure and development; And Wet etching the first dielectric layer by using the patterned first photoresist layer as a mask Method of manufacturing a coil comprising a. The method of claim 1, Remaining the second dielectric film, Coating a second photoresist film on the second dielectric film and patterning the photoresist film by exposure and development; And Wet etching the second dielectric layer by using the patterned second photoresist layer as a mask Method of manufacturing a coil comprising a.