[go: up one dir, main page]

KR100564425B1 - Chemical mechanical polishing device using magnetic field and polishing method - Google Patents

Chemical mechanical polishing device using magnetic field and polishing method Download PDF

Info

Publication number
KR100564425B1
KR100564425B1 KR1019990065812A KR19990065812A KR100564425B1 KR 100564425 B1 KR100564425 B1 KR 100564425B1 KR 1019990065812 A KR1019990065812 A KR 1019990065812A KR 19990065812 A KR19990065812 A KR 19990065812A KR 100564425 B1 KR100564425 B1 KR 100564425B1
Authority
KR
South Korea
Prior art keywords
magnetic field
wafer
polishing
polishing pad
pad
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990065812A
Other languages
Korean (ko)
Other versions
KR20010058479A (en
Inventor
김우현
홍정균
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1019990065812A priority Critical patent/KR100564425B1/en
Publication of KR20010058479A publication Critical patent/KR20010058479A/en
Application granted granted Critical
Publication of KR100564425B1 publication Critical patent/KR100564425B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B24B1/005—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes using a magnetic polishing agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

본 발명은, 자기장을 이용한 화학기계적연마 장치 및 그를 이용한 연마방법에 관한 것으로서, 특히, 웨이퍼를 연마하는 연마패드에 자기장발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하는 매우 유용하고 효과적인 발명이다. 또한, 본 발명을 이용하는 경우, 현재 대규모로 소모되고 있는 연마제를 자기장으로 제어하므로 연마제의 사용을 현저하게 줄일 수 있는 장점을 지닌다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus using a magnetic field and a polishing method using the same. In particular, since a magnetic field generating means is provided on a polishing pad for polishing a wafer to generate a magnetic field with different polarities at an appropriate position, the wafer and the polishing pad are used. It is a very useful and effective invention to improve the electrical properties of the device by controlling the distribution of the abrasive supplied evenly so that the wafer is polished in a state of improved polishing uniformity by the polishing pad. In addition, in the case of using the present invention, since the abrasive, which is currently consumed on a large scale, is controlled by a magnetic field, the use of the abrasive is significantly reduced.

연마패드 연마제 자기장 웨이퍼 자기 발생수단 제어수단 Polishing pad Polishing agent Magnetic field Wafer magnetic generating means Control means

Description

자기장을 이용한 화학기계적연마장치 및 그 연마방법 { Device For Polishing The Semiconductor Device Using Magnetic Field And Method Thereof } Device for Polishing The Semiconductor Device Using Magnetic Field And Method Thereof}             

도 1은 일반적인 연마패드를 사용하여 웨이퍼를 연마하는 상태를 보인 도면이고,1 is a view showing a state of polishing a wafer using a general polishing pad,

도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며,2 is a view showing a state of polishing a wafer using a magnetic field according to an embodiment of the present invention,

도 3은 본 발명의 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며,3 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention,

도 4는 본 발명의 또 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이다.4 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention.

*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

10 : 연마패드 15 : 패드회전축10: polishing pad 15: pad rotating shaft

20 : 연마제 30 : 웨이퍼20: abrasive 30: wafer

35 : 웨이퍼회전축 40 : 자기장발생수단35: wafer rotation axis 40: magnetic field generating means

44, 44a, 44b : 양극 46, 46a, 46b : 음극 44, 44a, 44b: anode 46, 46a, 46b: cathode

50 : 제어수단50: control means

본 발명은 화학기계적연마법(Chemical Mechanical Polishing)에 관한 것으로서, 특히, 웨이퍼를 연마하는 연마패드에 자계발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하도록 하는 자기장을 이용한 화학기계적연마장치 및 연마방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to chemical mechanical polishing, and in particular, magnetic field generating means is provided on a polishing pad for polishing a wafer to generate a magnetic field with a different polarity at an appropriate position, thereby being supplied between the wafer and the polishing pad. The present invention relates to a chemical mechanical polishing apparatus and a polishing method using a magnetic field to uniformly control the distribution of an abrasive to allow a wafer to be polished in an improved polishing uniformity by a polishing pad to improve electrical characteristics of the device.

일반적으로, 고집적 메모리 소자의 제조공정에서 각 층별 셀영역 및 주변회로 영역에 적층된 차이로 인하여 반도체소자의 위상차가 발생되고, 이는 반도체소자를 제조하기 위하여 평탄화공정이 필요하게 된다. 집적도가 낮은 소자의 경우에는 유동성이 풍부한 층간절연막을 적층하여 열을 가하여서 유동성을 풍부하게 하여 평탄화하는 방법을 이용하였으나. 고집적 반도체소자의 경우에는 한계에 다다르게 되었다.In general, in the manufacturing process of the highly integrated memory device, the phase difference of the semiconductor device is generated due to the difference stacked in the cell area and the peripheral circuit area of each layer, which requires a planarization process to manufacture the semiconductor device. In the case of a low integration device, a method of stacking an interlayer insulating film rich in fluidity and applying heat to enrich the fluidity and planarize the device. Highly integrated semiconductor devices have reached their limits.

그로 인하여 층간절연막에 콘택을 형성하고, 이 콘택 내부에 금속층을 매립하여 불필요한 부분을 제거하기 위하여 화학기계적연마공정(Chemical Mechanical Polishing)을 진행하게 된다.As a result, a contact is formed in the interlayer insulating film, and a metal mechanical layer is embedded in the contact to remove unnecessary portions.

물론 상기 화학기계적연마공정은, 금속배선층 이외에도 일반적인 층간절연막을 연마하기 위하여 사용되는 경우도 있으며, 여러가지의 종류의 층을 평탄화하기 위하여 이용되어진다.Of course, the chemical mechanical polishing process may be used to polish a general interlayer insulating film in addition to the metal wiring layer, and is used to planarize various kinds of layers.

이 화학기계적연마공정을 진행할 때, 텅스텐플러그 이외의 메탈층을 완전하게 제거하여야만 메탈브리지(Metal Bridge)에 의한 소자의 페일을 막을 수 있다.When the chemical mechanical polishing process is performed, the metal bridge other than the tungsten plug must be completely removed to prevent the device from failing by the metal bridge.

상기 CMP연마공정을 진행할 때, 발생되는 웨이퍼 내의 연마불균일도 (Non-Uniformity)에 의하여 금속층을 완전하게 제거하기 위한 오버 폴리싱 (Over-Polishing)이라는 공정을 진행하기도 한다.When the CMP polishing process is performed, a process called over-polishing may be performed to completely remove the metal layer due to non-uniformity in the wafer.

그러나, 일반적인 CMP연마공정은 증착된 물질을 전면적으로 연마하기 때문에 연마균일도(Polishing Uniformity)가 매우 중요하고, 연마 균일도에 따라 심한 경우, 내부 선을 연결하기 위해 필요한 폴리사이드 배선이나 금속배선층의 연마까지 동시에 이루어지므로 반도체소자에 브릿지(Bridge)를 유발하고 그로 인하여 소자의 전기적인 특성이 저하되는 문제를 지닌다.However, in the general CMP polishing process, polishing uniformity is very important because the entire surface of the deposited material is polished, and in the case of severe polishing uniformity, even the polishing of the polyside wiring or the metal wiring layer required to connect the internal wires is required. Since it is made at the same time, there is a problem that the bridge (bridge) in the semiconductor device and thereby the electrical characteristics of the device is degraded.

본 발명은 이러한 점을 감안하여 안출한 것으로서, 웨이퍼를 연마하는 연마패드에 자기장발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하는 것이 목적이다.The present invention has been made in view of the above, and since the magnetic field generating means is installed on the polishing pad for polishing the wafer, the magnetic field is generated by varying the polarity at an appropriate position, so that the amount of the abrasive supplied between the wafer and the polishing pad is uniformly controlled. Thus, the wafer is polished in a state where the polishing uniformity is improved by the polishing pad, thereby improving the electrical characteristics of the device.

이러한 목적은 웨이퍼회전축에 고정되어 회전하는 웨이퍼와; 상기 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하고, 표면에 공급된 연마제로 연마를 수행하는 연마패드를 갖는 연마장치에 있어서, 상기 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드 사이에 공급되는 연마제 분포를 균일하게 하는 자기장발생수단과; 상기 자기장발생수단을 제어하여 연마패드에서 자기장의 크기와 자기장이 형성되는 위치를 조절하는 제어수단을 포함하여 이루어진 자기장을 이용한 화학기계적연마장치를 제공함으로써 달성된다.This object is a wafer that is fixed to the wafer rotation axis and rotates; A polishing apparatus having a polishing pad that contacts a bottom surface of the wafer to rotate on a pad rotation axis and performs polishing with an abrasive supplied to a surface, the polishing apparatus being applied between the wafer and the polishing pad by applying a magnetic field to the polishing pad. Magnetic field generating means for making the distribution uniform; It is achieved by providing a chemical mechanical polishing apparatus using a magnetic field comprising a control means for controlling the magnetic field generating means to control the size of the magnetic field and the position where the magnetic field is formed in the polishing pad.

그리고, 상기 자기장발생수단에 의하여 발생되는 자기장의 크기는, 0.1 mGauss ∼ 10Gauss의 범위에 있는 세기인 것이 바람직 하다.The magnitude of the magnetic field generated by the magnetic field generating means is preferably in the range of 0.1 mGauss to 10 Gauss.

그리고, 본 발명의 목적은, 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하는 연마패드 표면에 공급된 연마제로 연마를 수행하는 화학기계적연마방법에 있어서, 상기 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드 사이에 공급되는 연마제 분포를 조절하여 웨이퍼의 연마균일도를 향상하도록 하는 자기장을 이용한 화학기계적연마방법을 제공함으로써 달성된다.In addition, an object of the present invention, in the chemical mechanical polishing method for performing polishing with an abrasive supplied to the surface of the polishing pad in contact with the bottom surface of the wafer to rotate on the pad rotation axis, applying a magnetic field to the polishing pad to polish the wafer and It is achieved by providing a chemical mechanical polishing method using a magnetic field to adjust the distribution of the abrasive supplied between the pads to improve the polishing uniformity of the wafer.

상기 연마패드 내에 자기장을 다양한 간격으로 형성하여 웨이퍼를 연마하도록 한다.Magnetic fields are formed in the polishing pad at various intervals to polish the wafer.

상기 연마패드와 웨이퍼 사이에 자기장을 형성하여 웨이퍼를 연마하는 것이 바람직 하다.It is preferable to form a magnetic field between the polishing pad and the wafer to polish the wafer.

이하, 첨부한 도면을 참조하여 본 발명의 바람직한 일실시예의 구성에 대해 상세하게 설명하고자 한다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration of a preferred embodiment of the present invention.

도 2는 본 발명의 일실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며, 도 3은 본 발명의 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이며, 도 4는 본 발명의 또 다른 실시예에 따른 자기장을 이용하여 웨이퍼를 연마하는 상태를 보인 도면이다.2 is a view showing a state of polishing a wafer using a magnetic field according to an embodiment of the present invention, Figure 3 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention, 4 is a view showing a state of polishing a wafer using a magnetic field according to another embodiment of the present invention.

본 발명의 구성을 살펴 보면, 웨이퍼회전축(35)에 고정되어 회전하는 웨이퍼 (30)와; 상기 웨이퍼(30)의 저면에 접촉되어 패드회전축(15)으로 회전하고, 표면에 공급된 연마제(20)로 연마를 수행하는 연마패드(10)를 갖는 연마장치에 있어서, 상기 연마패드(10)에 자기장을 인가하여 상기 웨이퍼(30)와 연마패드(10) 사이에 공급되는 연마제(20) 분포를 균일하게 하는 자기장발생수단(40)과; 상기 자기장발생수단(40)을 제어하여 연마패드(20)에서 자기장의 크기와 자기장이 형성되는 위치를 조절하는 제어수단(50)을 포함하여 이루어진다.Looking at the configuration of the present invention, the wafer 30 is fixed to the wafer rotating shaft 35 and rotated; In the polishing apparatus having a polishing pad (10) in contact with the bottom surface of the wafer (30) to rotate on the pad rotating shaft (15) and to perform polishing with the abrasive (20) supplied to the surface, the polishing pad (10) Magnetic field generating means (40) for applying a magnetic field to the wafer (30) and uniformly distributing the abrasive (20) supplied between the polishing pad (10); It comprises a control means 50 for controlling the magnetic field generating means 40 to adjust the size of the magnetic field and the position in which the magnetic field is formed in the polishing pad 20.

그리고, 상기 자기장발생수단(40)에 의하여 발생되는 자기장의 크기는, 0.1 mGauss ∼ 10Gauss의 범위에 있는 세기를 갖도록 한다.In addition, the magnitude of the magnetic field generated by the magnetic field generating means 40 is such that it has an intensity in the range of 0.1 mGauss to 10 Gauss.

상기 자기장발생수단(40)은, 전자석을 사용하도록 한다.The magnetic field generating means 40 is to use an electromagnet.

그리고, 도 2에 도시된 바와 같이, 상기 연마패드(15)의 중심부위에 양극 (44)을 형성하고, 양측 끝단부위에 음극(46)을 형성하여 두개의 자기장이 형성되도록 하여 웨이퍼(30)와 연마패드(30) 사이에 자기장을 형성한 상태를 보인다.As shown in FIG. 2, the anode 44 is formed on the center of the polishing pad 15, and the cathodes 46 are formed on both ends thereof so that two magnetic fields are formed. The magnetic field is formed between the polishing pads 30.

도 3에 도시된 바와 같이, 상기 연마패드(10)의 중심부분 및 양측 끝단부위에 음극(46a)을 형성하고, 웨이퍼(30)의 중심부분에 양극(44a)을 형성하여 자기장 이 연마패드(10)에 대하여 수평으로 형성하도록 한다.As shown in FIG. 3, the cathode 46a is formed at the center portion and both ends of the polishing pad 10, and the anode 44a is formed at the center portion of the wafer 30 to form a polishing pad ( It should be formed horizontally with respect to 10).

도 4에 도시된 바와 같이, 상기 연마패드(10)의 배면부위에 음극(46b)을 형성하고, 웨이퍼(30)의 배면부분에 양극(44a)을 형성하여서 자기장이 연마패드(10)와 웨이퍼(30) 사이에 상,하로 형성되도록 한다.As shown in FIG. 4, the cathode 46b is formed on the back side of the polishing pad 10, and the anode 44a is formed on the back side of the wafer 30 so that a magnetic field is generated by the polishing pad 10 and the wafer ( 30) to be formed up and down between.

이와 같이, 상기 연마패드(10)에 양극 및 음극의 형성되는 위치 및 세기 등은 가변하는 것이 가능하다.As such, the position and the intensity of the positive and negative electrodes formed on the polishing pad 10 may vary.

이와 같이 구성된 상태에서 도 2경우를 예를 들어서 작용을 살펴 보면, 자기발생수단(40)에서 자기장을 인가하여 연마패드(10)에 양극(44) 및 음극(46)을 형성한 후, 패드회전축(15)을 미도시된 구동수단을 사용하여 회전시키도록 한다.Referring to the operation of FIG. 2 in the state configured as described above, for example, a magnetic field is applied from the magnetic generating means 40 to form the positive electrode 44 and the negative electrode 46 on the polishing pad 10, and then the pad rotation shaft. To rotate the 15 using a drive means not shown.

그리고, 상기 웨이퍼회전축(35)을 회전하여 웨이퍼(30)를 연마패드(30)의 회전방향과 반대 방향으로 회전시켜 연마공정을 진행하고, 연마패드(10)와 웨이퍼 (30) 사이에는 연마제(20)를 공급하도록 한다.Then, the wafer rotation shaft 35 is rotated to rotate the wafer 30 in a direction opposite to the rotation direction of the polishing pad 30 to perform a polishing process. 20) to be supplied.

이러한 상태에서 웨이퍼(30)는 연마패드(110)와 연마제(20)에 의하여 연마되어지게 된다.In this state, the wafer 30 is polished by the polishing pad 110 and the abrasive 20.

한편, 상기 연마패드(10)의 양극(44)(44a)(44b)과 음극(46)(46a)(46b) 사이에 형성되는 자기장(42)은 금속성분인 연마제(20)를 골고루 균일하게 분포하는 역할을 하고, 연마제(20)의 이동을 제어하므로 웨이퍼(30)의 연마효율을 최대한도로 높여주는 역할을 한다.On the other hand, the magnetic field 42 formed between the anodes 44, 44a, 44b and the cathodes 46, 46a, 46b of the polishing pad 10 evenly distributes the abrasive 20, which is a metal component. It serves to distribute and to control the movement of the abrasive 20 serves to increase the polishing efficiency of the wafer 30 to the maximum.

그리고, 자기발생수단(40)에서 발생되는 자기장이 연마패드(10)에서 현성되는 세기 및 위치등을 제어수단(50)을 사용하여 조절하도록 한다. Then, the magnetic field generated by the magnetic generating means 40 to adjust the strength and position, etc. are manifested in the polishing pad 10 using the control means 50.

상기한 바와 같이, 본 발명에 따른 자기장을 이용한 화학기계적연마장치 및 그를 이용한 방법을 이용하게 되면, 웨이퍼를 연마하는 연마패드에 자기장발생수단을 설치하여 적절한 위치에 극성을 다르게 하여 자기장을 발생하므로 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포량을 골고루 제어하여 웨이퍼가 연마패드에 의하여 연마균일도가 향상된 상태로 연마되도록 하여 소자의 전기적인 특성을 향상하는 매우 유용하고 효과적인 발명이다.As described above, when the chemical mechanical polishing apparatus using the magnetic field and the method using the same according to the present invention are used, the magnetic field generating means is installed on the polishing pad for polishing the wafer to generate a magnetic field with different polarities at an appropriate position. It is a very useful and effective invention to improve the electrical properties of the device by controlling the distribution of the abrasive supplied between the polishing pad and the polishing to improve the polishing uniformity by the polishing pad.

또한, 본 발명을 이용하는 경우, 현재 대규모로 소모되고 있는 연마제의 사용을 자기장으로 제어하므로 연마제의 사용을 현저하게 줄일 수 있는 장점을 지닌다.In addition, in the case of using the present invention, since the use of the abrasive, which is currently consumed on a large scale, is controlled by a magnetic field, the use of the abrasive is significantly reduced.

Claims (5)

웨이퍼회전축에 고정되어 회전하는 웨이퍼와; 상기 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하고, 표면에 공급된 연마제로 연마를 수행하는 연마패드를 갖는 연마장치에 있어서, A wafer fixed to the wafer rotating shaft and rotating; A polishing apparatus having a polishing pad that contacts a bottom surface of the wafer, rotates on a pad rotation axis, and performs polishing with an abrasive supplied to a surface. 상기 웨이퍼회전축과 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드사이에서 수직방향 자기장이 형성되어 상기 웨이퍼와 연마패드 사이에 공급되는 연마제의 분포를 균일하게 하는 자기장발생수단과;Magnetic field generating means for applying a magnetic field to the wafer rotational axis and the polishing pad to form a vertical magnetic field between the wafer and the polishing pad to uniformly distribute the abrasive supplied between the wafer and the polishing pad; 상기 자기장발생수단을 제어하여 상기 웨이퍼와 연마패드 사이에서 발생하는 자기장의 크기와 자기장이 형성되는 위치를 조절하는 제어수단을 포함하여 이루어진 것을 특징으로 하는 자기장을 이용한 화학기계적연마장치.And a control means for controlling the magnetic field generating means to adjust the size of the magnetic field generated between the wafer and the polishing pad and the position at which the magnetic field is formed. 제 1 항에 있어서, 상기 자기장발생수단에 의하여 발생되는 자기장의 크기는, 0.1 mGauss ∼ 10Gauss 범위의 세기를 갖는 것을 특징으로 하는 자기장을 이용한 화학기계적연마장치.2. The chemical mechanical polishing apparatus according to claim 1, wherein the magnitude of the magnetic field generated by the magnetic field generating means has an intensity in the range of 0.1 mGauss to 10 Gauss. 웨이퍼회전축에 고정되어 회전하는 웨이퍼의 저면에 접촉되어 패드회전축으로 회전하는 연마패드의 표면에 공급된 연마제로 연마를 수행하는 화학기계적연마방법에 있어서,In the chemical mechanical polishing method of performing polishing with an abrasive supplied to the surface of the polishing pad which is fixed to the wafer rotating shaft and rotated to the pad rotating shaft in contact with the bottom surface of the rotating wafer, 상기 웨이퍼회전축과 연마패드에 자기장을 인가하여 상기 웨이퍼와 연마패드 사이에서 수직방향 자기장이 형성되어 공급되는 연마제의 분포를 조절하므로 웨이퍼의 연마균일도를 향상하도록 하는 자기장을 이용한 화학기계적연마방법.A chemical mechanical polishing method using a magnetic field to improve the polishing uniformity of the wafer by applying a magnetic field to the wafer rotation axis and the polishing pad to adjust the distribution of the abrasive supplied by forming a vertical magnetic field between the wafer and the polishing pad. 삭제delete 삭제delete
KR1019990065812A 1999-12-30 1999-12-30 Chemical mechanical polishing device using magnetic field and polishing method Expired - Fee Related KR100564425B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990065812A KR100564425B1 (en) 1999-12-30 1999-12-30 Chemical mechanical polishing device using magnetic field and polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990065812A KR100564425B1 (en) 1999-12-30 1999-12-30 Chemical mechanical polishing device using magnetic field and polishing method

Publications (2)

Publication Number Publication Date
KR20010058479A KR20010058479A (en) 2001-07-06
KR100564425B1 true KR100564425B1 (en) 2006-03-28

Family

ID=19632980

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990065812A Expired - Fee Related KR100564425B1 (en) 1999-12-30 1999-12-30 Chemical mechanical polishing device using magnetic field and polishing method

Country Status (1)

Country Link
KR (1) KR100564425B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12280466B2 (en) 2021-10-22 2025-04-22 Samsung Electronics Co., Ltd. Substrate polishing apparatus, substrate polishing system including the same, and substrate polishing method using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102785131B (en) * 2012-03-23 2014-08-06 中国科学院光电技术研究所 Rigidity-controllable small grinding tool polishing disk based on magnetorheological fluid and polishing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08155831A (en) * 1994-12-06 1996-06-18 Nippondenso Co Ltd Polishing device and polishing method
JPH08203861A (en) * 1995-01-20 1996-08-09 Sony Corp Mechanochemical polishing method and device
US5577948A (en) * 1992-04-14 1996-11-26 Byelocorp Scientific, Inc. Magnetorheological polishing devices and methods
JPH10209090A (en) * 1997-01-23 1998-08-07 Matsushita Electric Ind Co Ltd Polishing method and semiconductor polishing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5577948A (en) * 1992-04-14 1996-11-26 Byelocorp Scientific, Inc. Magnetorheological polishing devices and methods
JPH08155831A (en) * 1994-12-06 1996-06-18 Nippondenso Co Ltd Polishing device and polishing method
JPH08203861A (en) * 1995-01-20 1996-08-09 Sony Corp Mechanochemical polishing method and device
JPH10209090A (en) * 1997-01-23 1998-08-07 Matsushita Electric Ind Co Ltd Polishing method and semiconductor polishing apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12280466B2 (en) 2021-10-22 2025-04-22 Samsung Electronics Co., Ltd. Substrate polishing apparatus, substrate polishing system including the same, and substrate polishing method using the same

Also Published As

Publication number Publication date
KR20010058479A (en) 2001-07-06

Similar Documents

Publication Publication Date Title
US7297239B2 (en) Method and apparatus for the electrochemical deposition and planarization of a material on a workpiece surface
TWI310718B (en) Conductive polishing pad with anode and cathode
US7309406B2 (en) Method and apparatus for plating and polishing semiconductor substrate
US7670466B2 (en) Methods and apparatuses for electrochemical-mechanical polishing
US7341649B2 (en) Apparatus for electroprocessing a workpiece surface
US7153410B2 (en) Methods and apparatus for electrochemical-mechanical processing of microelectronic workpieces
US10967479B2 (en) Chemical mechanical polishing system and method
JPH10249710A (en) Abrasive pad with eccentric groove for cmp
TW506010B (en) Edge instability suppressing device and system
KR100564425B1 (en) Chemical mechanical polishing device using magnetic field and polishing method
US6875322B1 (en) Electrochemical assisted CMP
US7025860B2 (en) Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface
KR19980045527U (en) Chemical mechanical polishing equipment
US20060003670A1 (en) Electrically enhanced surface planarization
US7993498B2 (en) Apparatus and method of electrolytic removal of metals from a wafer surface
KR200260932Y1 (en) Structure For Forming The Polishing Groove Of Polish Pad
US7648616B1 (en) Apparatus and method for semiconductor wafer electroplanarization
JPH08203861A (en) Mechanochemical polishing method and device
US7052996B2 (en) Electrochemically polishing conductive films on semiconductor wafers
KR20020053941A (en) Polisher for chemical mechanical polishing process

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20110222

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20120321

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20120321

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000