KR100590753B1 - Thin Film Transistor Board for Liquid Crystal Display and Manufacturing Method - Google Patents

Abstract

First, patterning is performed on the insulating substrate by a photolithography process using a first mask, so that the gate wiring including the gate line, the gate electrode, and the gate pad in the horizontal direction and the vertical common, the branch of the common signal line and the common signal line in the horizontal direction The common wiring including the electrode is formed. Subsequently, the gate insulating film, the half-layer of amorphous silicon, the doped amorphous silicon layer, and the quadruple layers of the data conductor layer are successively stacked, and then patterned in a single photolithography process using a second mask to pattern the semiconductor layer, the ohmic contact layer, and the data. Wiring and pixel wiring are formed. At this time, it is preferable that the data wirings and the pixel wirings are formed inside the semiconductor layer so that the data patterns and the semiconductor patterns have a double step. To this end, the second mask may vary the transmittances of the first portion corresponding to the data wiring and the pixel wiring, the second portion corresponding to the semiconductor pattern, and the remaining third portion C, thereby partially forming the thickness of the periphery film. Can be. Next, a protective film is finally stacked on the substrate and patterned together with the gate insulating film to form a contact hole exposing the gate pad and the data pad.

Planar drive method, mask, photoresist, transmittance

Description

Thin film transistor substrate for liquid crystal display device and manufacturing method therefor {THIN FILM TRANSISTOR SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEREOF}

1 is a layout view of a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view of the thin film transistor unit and the pixel unit in which the thin film transistor substrate illustrated in FIG. 1 is cut along the line II-II ′;

3A and 4A are layout views of a thin film transistor substrate in an intermediate process of manufacturing according to an embodiment of the present invention,

3B and 4B are cross-sectional views taken along lines IIIb-IIIb 'and IVb-IVb' in FIGS. 3A and 4A, respectively.

5 and 6 are cross-sectional views taken along the line IVb-IVb 'of FIG. 4A and are cross-sectional views illustrating a process subsequent to FIG. 4B.

The present invention relates to a thin film transistor substrate for a liquid crystal display device and a manufacturing method thereof.

The liquid crystal display is one of the most widely used flat panel display devices. The liquid crystal display includes two substrates on which electrodes are formed and a liquid crystal layer interposed therebetween, and rearranges the liquid crystal molecules of the liquid crystal layer by applying a voltage to the electrode. By controlling the amount of light transmitted.

Among the liquid crystal display devices, a liquid crystal display device having a thin film transistor for forming an electrode on each of two substrates and switching a voltage applied to the electrode is generally used. The thin film transistor is generally formed on one of two substrates. .

In addition, in order to improve the viewing angle, a flat drive type liquid crystal display device in which two electrodes for driving liquid crystal molecules are formed on one substrate to form an electric field almost parallel to the substrate has been developed.

At this time, the substrate on which the thin film transistor is formed is manufactured through a photolithography process using a mask. In order to reduce the production cost, it is required to reduce the number of photolithography processes using a mask.

An object of the present invention is to simplify the method of manufacturing a thin film transistor substrate for a liquid crystal display device.

In order to achieve the above object, the present invention forms a photosensitive film pattern having a partly different thickness by using a mask that can partially control the intensity of transmitted light, so that the semiconductor layer can come out of the data line and the pixel line. It is formed by one photo process using a mask.

In the method of manufacturing a thin film transistor substrate for a liquid crystal display according to the present invention, first, a gate wiring including a gate line in a horizontal direction, a gate pad connected to the gate line and receiving a scan signal from the outside, and a gate electrode which is part of the gate line; A common wiring including a common signal line parallel to the gate line and a common signal line and a common electrode extending in the vertical direction is formed. Subsequently, the gate insulating film, the semiconductor layer, and the data conductor layer covering the common wiring and the gate wiring are sequentially stacked, and the data conductor layer and the semiconductor are patterned by using a mask. The source electrode extends toward the gate electrode and includes a vertical direction. A data line including a data line intersecting the gate line to define a pixel, a drain electrode positioned opposite to the source electrode with respect to the gate electrode, and a data pad connected to the data line, and extending in a horizontal direction. A semiconductor pattern is formed below the pixel wiring, the data wiring, and the common wiring including a pixel signal line and a pixel electrode, which is a branch of the pixel signal line and extends vertically and faces the common electrode in parallel. At this time, the semiconductor pattern is formed to extend out of the pixel wiring and the data wiring. To this end, in the photolithography process of patterning the semiconductor pattern and the data conductor layer, the second portion corresponding to the semiconductor pattern except for the first portion and the first portion corresponding to the data wiring and the pixel wiring, and the remaining portions except for the first and second portions, A photosensitive film pattern is formed by using a mask that can adjust three transmittances differently, a semiconductor pattern is formed by using the photosensitive film pattern as an etching mask, and data lines and pixel lines are formed. Next, a protective film is formed on the substrate, and a contact hole exposing the gate pad and the data pad is formed.

In the method of manufacturing a thin film transistor substrate for a liquid crystal display device according to the present invention, an ohmic contact layer containing a high concentration of impurities may be further formed between the semiconductor pattern layer and the data line.

Here, the transmittance of the first portion is about 0 to 3%, the transmittance of the second portion is about 20 to 60%, preferably about 30 to 40%, and the transmittance of the third portion is preferably 90% or more. The photoresist pattern may be formed of a double layer formed of an upper layer and a lower layer having different photosensitivity, and may form mosaic-shaped irregularities or transparent and translucent patterns and slit patterns in order to control the intensity of transmitted light differently. You may form the coating film in which the shape is formed. At this time, the size of the pattern or irregularities should be smaller than the resolution of the light source used in the exposure step. In addition, in order to adjust the light transmittance differently, a thin film having a different transmittance may be used or the thickness of the thin film may be changed.

Then, the liquid crystal display according to an exemplary embodiment of the present invention and a manufacturing method thereof will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement the present invention.

In an embodiment of the present invention, in order to simplify the manufacturing process, in the patterning process using one mask, the semiconductor layer and the data line may be left by partially leaving the photoresist pattern at a different thickness by using a mask that can adjust the intensity of light partially transmitted. And the pixel wirings can be selectively etched so that the semiconductor layer is formed to at least extend out of the data wirings and the pixel wirings.

A structure of a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2. The structure of the thin film transistor substrate for a liquid crystal display according to this embodiment is manufactured according to the manufacturing method using the three-layer mask described later.

1 is a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 2 is a thin film transistor portion, a pixel portion, and a gate pad of the thin film transistor substrate shown in FIG. 1, taken along a line II-II ′. Sectional drawing of a part and a data pad part.

Gate wiring and common wiring made of a single film or a double film of aluminum or an aluminum alloy and chromium, molybdenum or molybdenum alloy are formed on the insulating substrate 10. The gate wirings are connected to the gate lines 22 and the ends of the gate lines 22 extending in the horizontal direction, and the branch of the gate pads 26 and the gate lines 22 which receive scan signals from the outside and transfer them to the gate lines. A gate electrode 24 of the phosphor thin film transistor. In addition, the common wiring is made of the same material as the gate wiring, and extends in the vertical direction to a branch of the common signal line 29 and the common signal line 29 formed in the horizontal direction in parallel with the gate line 22. The common signal through 29 includes a common electrode 27.

A gate insulating film 30 made of silicon nitride (SiN _x ) is formed on the entire surface of the substrate 10 to cover the gate wirings 22, 24, and 26 and the common wirings 27 and 29.

A semiconductor pattern 40 is formed on the gate insulating layer 30 and is formed of a semiconductor such as amorphous silicon, and at least a portion thereof overlaps with the gate electrode 24. An n-type impurity is heavily doped on the semiconductor pattern 40. Resistive contact layers 52, 54, 56, 57, 59 made of a material such as n + hydrogenated amorphous silicon are formed. On the ohmic contacts 52, 54, 56, 58, 57, 59, such as chromium (Cr) or molybdenum-tungsten alloys, single films of aluminum or aluminum alloys or their multilayers containing indium tin oxide (ITO) The data wirings 62, 64, 66, 68 and the pixel wirings 67, 69 are formed. The data lines 62, 64, 66, and 68 are formed in the vertical direction and are connected to the data line 62 and the data line 62, which cross each other to the gate line 22 to define one unit pixel. One of the drain electrode 66 and the data line 62, which is separated from the source electrode 64 and the data line 62, which extend toward the 24, and faces the source electrode 64 around the gate electrode 24. It is connected to the end and includes a data pad 68 for receiving an image signal from the outside. In addition, the pixel wirings 67 and 69 are connected to the drain electrode 66 and are formed in the horizontal direction, and are branched from the pixel signal line 69 and the pixel signal line 69 facing the common signal line 29. And a pixel electrode 67 facing in parallel with the common electrode 29. Here, the ohmic contacts 52, 54, 56, 58, 57, and 59, the data lines 62, 64, 66, and 68, and the pixel lines 67 and 69 have the same shape, and they are illustrated in FIG. 1. As shown in FIG. 2, the semiconductor pattern 40 is formed in a shape similar to that of the semiconductor pattern 40 to be narrower than the width of the semiconductor pattern 40, so that the semiconductor pattern 40 and the data lines 62, 64, and 66 are formed. 68 and the stepped portions of the pixel wirings 67 and 69 are formed in double. In particular, by sequentially forming the steps between the pixel electrode 67 and the semiconductor pattern 40 formed below the pixel portion displaying the image, the profile of the protective film formed subsequently is smoothly formed, resulting in light leakage due to poor rubbing. The phenomenon can be minimized.

A passivation layer 70 is formed on the data lines 62, 64, 66, and 68, the pixel lines 67 and 69, and the semiconductor layer 40 not covered by the passivation layer, and the data pad 68 is formed on the passivation layer 70. A contact hole 76 exposing the gate pad 26 is formed along with the contact hole 78 exposing the gate insulating film 30 and the gate insulating film 30. At this time, as shown in FIG. 2, the steps between the semiconductor pattern 40, the data wirings 62, 64, 66, 68, and the pixel wirings 67 and 69 are formed in duplicate so that the semiconductor pattern 40 and the data wiring 62 are formed. , 64, 66, 68, the protective film 70 is formed gently. As such, when the inclination generated by the protective film 70 is gentle, light leakage may be reduced by minimizing rubbing defects generated when rubbing the alignment layer formed thereafter.

Next, a method of manufacturing a thin film transistor substrate for a liquid crystal display device having a structure according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 1 and 2 and FIGS. 3A to 5B.

3A and 4A are layout views of a thin film transistor substrate in an intermediate process of manufacturing according to an embodiment of the present invention, and are shown in sequence according to the manufacturing sequence. 3B, 4B, 5, and 6 are diagrams cut along the lines IIIb-IIIb 'and IVb-IVb' in FIGS. 3A and 4A, respectively.

First, as shown in FIGS. 3A to 3B, a single film or a double film of aluminum or an aluminum alloy alloy film or molybdenum or molybdenum alloy or chromium is laminated on the insulating substrate 10, and patterning is performed by a photo process using a first mask. And a vertical common electrode which is a branch of the gate line 22, the gate electrode 24, and the gate pad 26 in the horizontal direction and the common signal line 29 and the common signal line 29 in the horizontal direction. A common wiring including 27) is formed.

4A and 6, the gate insulating film 30, the semiconductor layer 40 made of amorphous silicon, the doped amorphous silicon layer 50, and a single film of molybdenum or molybdenum alloy chromium or aluminum or The semiconductor layer 40 and the ohmic contact layer 52 are formed by successively stacking four layers of the data conductor layer 60 made of multiple layers including aluminum alloy or ITO, and patterning them in one photo process using a second mask. , 54, 56, 58, 57, 59, data lines 62, 64, 66, 68, and pixel lines 67, 69 are formed. In this case, as shown in FIGS. 4A and 6, the semiconductor pattern 40 is formed to come out of the data lines 62, 64, 66, and 68 and the pixel lines 67 and 69, particularly the pixel electrode 67. It is preferable to form the data pattern and the semiconductor pattern so as to have a double step. This is because the profile of the protective film to be formed later is smoothed. To this end, the photoresist pattern having a different thickness must be formed and the lower layers are etched using the etching mask. This will be described in detail with reference to FIGS. 4B and 5.

First, as shown in FIG. 4B, a positive photosensitive film 100 is coated on the data conductor layer 60 and then exposed using the second mask 200. In this case, the second mask 200 uses a partially different transmittance of light to form a different thickness of the photoresist film remaining after the development. Here, in the second mask 200, the transmittance of the first portion A corresponding to the data wiring and the pixel wiring is about 0 to 3%, and the second portion corresponding to the semiconductor pattern except for the first portion A ( The transmittance of B) is about 20 to 60%, preferably about 30 to 40%, and the transmittance of the third portion C except for the first and second portions A and B is preferably 90% or more. 4B shows the thickness of the photoresist film 100 remaining after the development. At this time, the photosensitive film 100 of the portion corresponding to C may be completely removed, the photosensitive film 100 of the portion corresponding to B is preferably 2,000 to 5,000 kPa, preferably 3,000 to 4,000 kPa, It is preferable to leave 1 micrometer or more in the corresponding part.

In this case, a positive photoresist film may be used, and a double photoresist film including an upper film and a lower film having different photosensitivity may be used to uniformly form the photoresist film thickness of a portion corresponding to B and a portion corresponding to C. FIG.

In addition, in order to control the intensity of transmitted light differently, mosaic-shaped irregularities or transparent and semi-transparent patterns and slit patterns may be formed, and a coating film having such a shape may be formed. In addition, a thin film having a different transmittance may be used, and the transmittance may be adjusted differently by changing the thickness of the thin film.

At this time, the size of the pattern or irregularities should be smaller than the resolution of the light source used in the exposure step.

Subsequently, as shown in FIG. 5, the data conductor layer 60, the doped amorphous silicon layer 50, and the semiconductor layer 40 are dry-etched using a photoresist pattern 100 having a partly different thickness as an etching mask. ) Is etched to complete the semiconductor pattern 40. Here, the photoresist is partially etched even at portions corresponding to A and B while exposing the gate insulating layer 30 and completing the semiconductor pattern 40. At this time, it is preferable to leave the photoresist pattern 100 at a sufficient thickness in the process of FIG. 4B so that the photoresist 100 is not completely removed at a portion corresponding to the upper edge B of the semiconductor pattern 40.

Subsequently, an ashing process is performed to remove the photoresist film 100 that remains thin on the edge of the semiconductor pattern 40, and dry-etch the data conductor layer 60 using the remaining photoresist film 100 as an etch mask. As shown in Figs. 4A and 6, data wirings 62, 64, 66, 68 and pixel wirings 67, 69 are completed.

As such, when the thickness of the photoresist layer is partially formed by using a mask that can control transmittance differently, and used as an etching mask, the semiconductor pattern 40 may be formed using the data line 62, 64, 66, or the like by a patterning process using one mask. 68 and out of the pixel wirings 67 and 69, preferably 0.5 mu m or more.

Subsequently, the doped amorphous silicon layer 50 is etched using the data wirings 62, 64, 66, 68 and the pixel wirings 67 and 69 or the photosensitive film remaining on the upper portion as a mask to etch the data wirings and the pixel wirings. The resistive contact layers 52, 54, 56, 58, 57, and 59 having the same shape as those of the second and second resistive layers are completely removed through the ashing process.

Next, as shown in FIGS. 1 and 2, a protective film 70 is stacked on the substrate 10 and patterned together with the gate insulating film 30 to form the gate pad 26 and the data pad 68. Form exposed contact holes 76, 78.

In the embodiment of the present invention, the data conductor layer is etched by dry etching by dry etching, but wet etching using an etchant may be used.

In the manufacturing method according to the embodiment of the present invention, a flat drive type liquid crystal display device is exemplified, but the present invention can also be applied to a method of manufacturing a reflective liquid crystal display device that displays an image using natural light through a reflective film.

According to the present invention, the data wiring, the pixel wiring, and the semiconductor layer are formed in one photo process, thereby simplifying the manufacturing process, thereby manufacturing a thin film transistor substrate for a liquid crystal display, thereby reducing manufacturing cost. In addition, by forming the data wirings and the pixel wirings inside the semiconductor layer and doublely forming these steps, the profile of the protective film formed thereon is smoothed, thereby minimizing the orientation defects generated during the rubbing process.

Claims (14)

Forming a common line including a gate line including a gate line and a gate electrode that is a part of the gate line, and a common line including a common signal line and a linear common electrode that is a branch of the common signal line on an insulating substrate; Sequentially stacking the gate insulating film, the semiconductor layer, and the data conductor layer covering the common wiring and the gate wiring; A photolithography process using the data conductor layer and the semiconductor layer using a mask, wherein the data line crosses the gate line to define a pixel, a source electrode connected to the data line, and the source electrode opposite to the source electrode. Forming a semiconductor pattern and a pixel wiring including a data line including a drain electrode positioned to be positioned, a pixel signal line connected to the drain electrode, and a linear pixel electrode branched from the pixel signal line and parallel to the common electrode; Method of manufacturing a thin film transistor substrate for a liquid crystal display device comprising a. In claim 1, And forming a portion of the semiconductor pattern to extend outward from at least the pixel electrode. In claim 2, The semiconductor pattern is a method of manufacturing a thin film transistor substrate for a liquid crystal display device is formed so as to exit 0.5μm or more outside the pixel electrode. In claim 3, The mask may have different transmittances between a first portion corresponding to the data line and the pixel line, a second portion corresponding to the semiconductor pattern except for the first portion, and a third portion except for the first and second portions. The manufacturing method of the thin film transistor substrate for liquid crystal display devices which can be adjusted. In claim 4, The transmittance of the first portion is 3% or less, the transmittance of the second portion is in the range of 20 to 60%, and the transmittance of the third portion is 90% or more. In claim 5, The method of manufacturing a thin film transistor substrate for liquid crystal display device, wherein the transmittance of the second portion is 30 to 40%. In claim 4, In the patterning process, a portion corresponding to the first portion has a first thickness, a portion corresponding to the second portion has a second thickness thinner than the first thickness, and a portion corresponding to the third portion includes: The manufacturing method of the thin film transistor substrate for liquid crystal display devices using the photosensitive film which has a 3rd thickness thinner than a 2nd thickness. In claim 1, The photosensitive film pattern is a thin film transistor substrate for a liquid crystal display device is formed of a double film consisting of an upper film and a lower film having different photosensitivity. In claim 1, And a thin film having a different transmittance or a thin film having a different thickness is formed in the mask to reduce light intensity. In claim 1, The gate line further includes a gate pad connected to the gate line to receive a scan signal from the outside, The data line further includes a data pad connected to the data line to receive a data signal from the outside. And forming a passivation layer having a contact hole for exposing the gate pad and the data pad, respectively, together with the gate insulating film. Insulation board, A common wiring formed on the substrate, the gate wiring including a gate line and a gate electrode which is a part of the gate line, a common wiring including a common signal line separated from the gate line, and a linear common electrode connected to the common signal line; A gate insulating film covering the common wiring and the gate wiring; A semiconductor pattern formed on the gate insulating layer, a portion of which overlaps with the gate electrode, and A source line formed over the semiconductor pattern and connected to the data line defining the pixel to cross the gate line and the data line, the source electrode extending toward the gate electrode and the source electrode, and separated from the source electrode. A data line including a drain electrode facing the electrode and a pixel wire connected to the drain electrode and including a linear pixel electrode facing in parallel with the common electrode; And at least a semiconductor pattern formed below the pixel electrode extends out of the pixel electrode. In claim 11, The semiconductor pattern is a thin film transistor for a liquid crystal display device is formed so as to exit 0.5μm or more out of the pixel electrode. In claim 12, The gate line further includes a gate pad connected to the gate line to receive a scan signal from the outside, The data line further includes a data pad connected to the data line to receive a data signal from the outside. And a passivation layer having a contact hole for exposing the gate pad and the data pad, together with the gate insulating layer. In claim 13, A pixel signal line connecting the drain electrode and the pixel electrode; The pixel signal line extends in a horizontal direction.

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