KR100685847B1 - Full color organic light emitting display device and manufacturing method thereof - Google Patents

Abstract

The present invention relates to an organic light emitting display device, and more particularly, to a substrate having R, G, and B pixel regions; a lower electrode formed on R, G, and B pixel regions on the substrate; An organic film including a hole injection layer formed in the light emitting layer and light emitting layers of R, G, and B pixels; And an upper electrode formed on the organic layer, wherein the light emitting layer of the B pixel is formed on the entire surface of the substrate including the light emitting layers of the R and G pixels as a common layer, and the auxiliary hole injection layer is formed on the lower electrode in the R pixel area. The present invention relates to a full color organic light emitting display device and a method of manufacturing the same.

Description

Full Color Organic Electroluminescent Device and Method for Manufacturing the same

1 is a cross-sectional view illustrating a structure of a conventional full color organic light emitting display device.

2 is a cross-sectional view of a full color organic light emitting display device according to Embodiment 1 of the present invention.

3 is a cross-sectional view of a full color organic light emitting display device according to a second exemplary embodiment of the present invention.

4 is a cross-sectional view of a full color organic light emitting display device according to Embodiment 3 of the present invention.

<Explanation of symbols for the main parts of the drawings>

100, 200. Substrate 111, 113, 115, 211, 213, 215. Lower electrode

120, 224. Hole injection layer 222a, 222b. Auxiliary hole injection layer

222c. Auxiliary hole transport layer 130, 230. Hole transport layer

141, 241. Light emitting layer of R pixel 143, 243. Light emitting layer of G pixel

145, 245. Light emitting layer of B pixel 220. Organic film

160, 250. Electron transport layer 170, 260. Upper electrode

I. R pixel region II. G pixel area

III. B pixel area

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat panel display, and more particularly, an auxiliary hole injection layer is formed to satisfy an optical path of R, G, and B pixels, and a multilayer organic film is formed by laser thermal transfer or fine metal mask. A light emitting full color organic light emitting display device and a method for manufacturing the same, which are capable of optimizing the thickness for each R, G, and B pixel and improving the characteristics of the device by using the light emitting layer of the B pixel as a common layer. will be.

In general, an organic light emitting display device includes a lower electrode and an upper electrode formed on a substrate, and a multilayer organic film formed between the lower electrode and the upper electrode. The organic film is selected from a hole injection layer, a hole transport layer, a light emitting layer, a hole suppression layer, an electron transport layer and an electron injection layer according to the function of each layer. In the display device having such a structure, since the upper electrode and the lower electrode are formed as transparent or opaque electrodes, light is emitted from the organic layer toward one side of the substrate or in a direction opposite to the substrate, or the amount of the opposite direction of the substrate and the substrate. It has a structure that is released laterally.

 1 is a cross-sectional view illustrating a structure of a conventional full color organic light emitting display device using a light emitting layer of a B pixel as a common layer. Referring to FIG. 1, an anode electrode is formed on the substrate 100 by lower electrodes 111, 113, and 115 according to each pixel, and a hole injection layer 120 and a hole transport layer 130 are formed on the entire surface of the substrate 100. Is formed. The light emitting layers 141 and 143 of the R and G pixels, which are organic materials, are patterned to correspond to the lower electrodes 111 and 113 formed in the R and G regions, and the light emitting layers 150 of the B pixel are the common layers. A hole injection layer 120 and a hole transport layer 1130 including a) is formed on the upper portion, the light emitting layer 150 of the B pixel also serves as a hole suppression layer. In addition, an electron transport layer 160 is formed on the emission layer, and a cathode electrode is formed on the electron transport layer 160 as an upper electrode 170.

The light emitting layers (EMLs) 141, 143, and 150 of the R, G, and B pixels are formed on the lower electrodes 111, 113, and 115 formed in the R, G, and B pixel areas to have a thickness suitable for each of the R, G, and B colors. The hole injection layer (HIL) 120, the hole transport layer (HTL) 130, and the electron transport layer (ETL) 160 are formed on the entire surface of the substrate as a common layer.

However, the full-color organic light emitting display device according to the conventional method forms a hole injection layer 120 and a hole transport layer 130, which are organic layers, on the entire surface of the substrate, and the light emitting layers 141 and 143 of R, G, and pixels are formed. The light emitting layer 150 of the B pixel is formed by patterning the same height from the substrate 100 using a fine metal mask or a laser thermal transfer method, and including the light emitting layers 141 and 143 of the R and G pixels, respectively. Is formed as a common layer, and the electron transport layer 160 is formed on the entire surface of the substrate 100 on the light emitting layer. When the full color organic light emitting display device is manufactured in the same manner as described above, each red (R) There is a problem that the color coordinate and efficiency characteristics are deteriorated due to interference phenomenon caused by the difference in the wavelength of light from the green (G), blue (B) light and other optical wavelength characteristics.

The present invention is to solve the above problems of the prior art, the auxiliary hole injection layer only in the lower portion of the light emitting layer of the R pixel region in the hole injection layer, the hole transport layer or a double layer of the organic layer formed as a common layer below the light emitting layer And the organic layer is formed using a fine metal mask or a laser thermal transfer method, whereby wavelengths of red (R) light interfere with green (G) and blue (B) light due to differences in optical wavelength characteristics. The present invention provides a front-emitting full-color organic light emitting display device and a method of manufacturing the same, which eliminate the problem of deteriorating efficiency characteristics due to the phenomenon, simplify the process, improve color coordinates, and improve device characteristics.

In order to achieve the above object, the full-color organic light emitting display device according to the present invention,

A substrate having R, G, and B pixel regions;

A lower electrode formed on the R, G, and B pixel areas on the substrate;

An organic layer including a hole injection layer formed on the lower electrode and a light emitting layer of R, G, and B pixels; And

An upper electrode formed on the organic layer;

The light emitting layer of the B pixel is formed on the entire surface of the substrate including the light emitting layers of the R and G pixels as a common layer, and an auxiliary hole injection layer is formed on the lower electrode in the R pixel area. Is achieved by

In addition, the manufacturing method of the full color organic light emitting display device according to the present invention for achieving the above object,

Providing a substrate having R, G, B pixel regions;

Forming a lower electrode on the R, G, and B pixel areas on the substrate;

An auxiliary hole injection layer is formed on the lower electrode of the R pixel region, a hole injection layer is formed on the lower electrode including the auxiliary hole injection layer, and light emitting layers of R and G pixels are patterned on the hole injection layer; Forming an organic film including a light emitting layer of B pixels as a common layer on an entire surface of the substrate including light emitting layers of the R and G pixels; And

A method of manufacturing a full-color organic light emitting display device, the method comprising: forming an upper electrode on the organic layer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are to be provided as an example to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, lengths, thicknesses, and the like of layers and regions may be exaggerated for convenience.

(Example 1)

FIG. 2 is a cross-sectional view of a full color organic light emitting display device according to a first embodiment of the present invention, which is a cross-sectional view of a top-emitting full color organic light emitting display device having an organic thin film.

Referring to FIG. 2, first, a substrate 200 having R, G, and B pixel regions I, II, and III as lower electrodes 211, 213, and 215, and having anode electrodes separated therefrom is formed.

The substrate 200 is made of a material such as glass, synthetic resin, or stainless steel, which has excellent mechanical strength, thermal stability, transparency, surface smoothness, ease of handling, and waterproofness.

Next, lower electrodes 211, 213, and 215 are formed on the substrate 200. The lower electrodes 211, 213, and 215 may be transparent or reflective electrodes. When the lower electrodes 211, 213, and 215 are anode electrodes, at least one thin film transistor may be further provided between the substrate 200 and the lower electrodes 211, 213, and 215. have. When the lower electrodes 211, 213, 215 are transparent electrodes, the lower electrodes 211, 213, 215 may be an indium tin oxide (ITO) film, an indium zinc oxide (IZO) film, a tin oxide (TO) film, or a zinc oxide (ZnO) film. have. When the lower electrodes 211, 213, 215 are reflective electrodes, the lower electrodes 211, 213, 215 may be silver (Ag) films, aluminum (Al) films, nickel (Ni) films, platinum (Pt) films, palladium (Pd) films, or the like. It may have a structure in which a transmissive oxide film of ITO, IZO, TO or ZnO is laminated on an alloy film or an alloy film thereof. The silver (Ag) film, the aluminum (Al) film, or an alloy film thereof may emit light from the organic film 220 including light emitting layers 241, 243, and 245 of at least R, G, and B pixels formed in a subsequent process. It is formed to reflect in the opposite direction to (200).

The lower electrodes 211, 213, and 215 may be formed by vapor phase deposition, ion beam deopsition, or electron beam deposition, such as sputtering and evaporation. Alternatively, the laser ablation may be performed using a laser ablation method.

Subsequently, a pixel definition layer (not shown) having an opening exposing a part of the surface of the lower electrodes 211, 213, 215 is formed on the substrate 200 on which the lower electrodes 211, 213, 215 are formed.

The pixel definition layer may be formed of one material selected from the group consisting of polyimide, benzocyclobutene series resin, phenol resin, and acrylate. The thin film as described above is formed by patterning by a photolithography process performed by an exposure and development process.

Next, the organic layer 220 is formed on the lower electrodes 211, 213, and 215. In Example 1 according to the present invention, the organic layer 220 includes a hole injection layer 224, a hole transport layer 230, or a double layer thereof, and light emitting layers 241, 243, 245 of the R, G, and B pixels, and an electron transport layer 250. Are sequentially stacked and provided on the lower electrode 211 of the R pixel region I with an auxiliary hole injection layer 222a to satisfy the optimized optical path required by the light emitting layer 241 of the R pixel. For example, the present invention is not limited thereto, and various layers capable of forming the organic layer 220 may be formed by omitting a part of the organic layer 220 or may be formed in a plurality of layers. By forming the auxiliary hole injection layer 222a as described above, the distances d1 and d2, which are the distance between the lower electrodes 211, 213 and 215, the light emitting layers 241 of the R pixels, and the light emitting layers 243 and 245 of the G and B pixels, may be different from each other. Therefore, an optimal resonance condition according to the wavelength characteristic difference of the red (R), green (G), and blue (B) light may be provided.

First, as shown in FIG. 2, the auxiliary hole injection layer 222a and the hole injection layer 224 are formed on the lower electrodes 211, 213, and 215. The hole injection layer 224 is a layer for facilitating the injection of holes into the light emitting layers 241, 243 and 245 of the R, G, and B pixels. It can be formed using a polymer material such as PANI (polyaniline), PEDOT (poly (3,4) -ethylenedioxythiophene). In addition, the auxiliary hole injection layer 222a is formed of the same material as the hole injection layer 224 on the lower electrode 211 of the R pixel region I. The auxiliary hole injection layer 222a is formed of an R pixel. In order to satisfy the optimized optical path of the red (R) light, which is a wavelength generated from the light emitting layer 241, the thickness of 150 to 250 내지.

Next, a hole transport layer 230 is formed on the hole injection layer 224. The hole transport layer 230 is a layer that facilitates hole transport of the R, G, and B pixels to the light emitting layers 241, 243, and 245, NPD (N, N'-dinaphthyl-N, N'-diphenyl benzidine), and TPD (N). , N'-Bis- (3-methylphenyl) -N, N'-bis- (phenyl) -benzidine), s-TAD, MTDATA (4,4 ', 4 "-Tris (N-3-methylphenyl-N- It may be formed using a low molecular material such as phenyl-amino) -triphenylamine) or a polymer material such as PVK.

The auxiliary hole injection layer 222a, the hole injection layer 224 and the hole transport layer 230 using any one method selected from the group consisting of vacuum deposition, spin coating and ink-jet (ink-jet) method It can be formed and can also be formed using a fine metal mask or a laser thermal transfer method.

Subsequently, light emitting layers 241, 243, and 245 of R, G, and B pixels are formed on the hole transport layer 230. The light emitting layers 241 and 243 of the R and G pixels are formed of phosphorescent light emitting layers, and the light emitting layer 245 of the B pixel is formed of a fluorescent light emitting layer to act as a hole suppression layer, and is formed by patterning the light emitting layers 241 and 243 of the R and G pixels. And the light emitting layer 245 of B pixel is formed as a common layer. That is, R is corresponding to the lower electrode 211 of the R pixel region I through a laser thermal transfer method using a thermal transfer device (not shown) having only an organic light emitting layer for the light emitting layer 241 of the R pixel as a transfer layer. The light emitting layer 241 of the pixel is patterned. Subsequently, a laser thermal transfer method using a thermal transfer element (not shown) having only an organic light emitting layer for the light emitting layer 243 of the G pixel as a transfer layer corresponds to the lower electrode 213 of the G pixel region (II). The light emitting layer 243 of the pixel is patterned, and the light emitting layer 245 of the B pixel is formed on the top including the light emitting layers 241 and 243 of the R and G pixels. When the light emitting layer is a fluorescent light emitting layer, the light emitting layer is Alq3 (8-trishydroxyquinoline aluminum), distyrylarylene (DSA), distyrylarylene derivative, distyrylbenzene (DSB), distyrylbenzene as a host material Selected from the group consisting of derivatives, DPVBi (4,4'-bis (2,2'-diphenyl vinyl) -1,1'-biphenyl), DPVBi derivatives, spiro-DPVBi and spiro-6P (spiro-sexyphenyl) It may include one material. Furthermore, the light emitting layer may further include one dopant material selected from the group consisting of styrylamine, perylene, and DSBP (distyrylbiphenyl).

Alternatively, when the light emitting layer is a phosphorescent light emitting layer, the light emitting layer may include one material selected from the group consisting of arylamine-based, carbazole-based and spiro-based as a host material. Preferably, the host material is selected from the group consisting of CBP (4,4-N, N dicarbazole-biphenyl), CBP derivative, mCP (N, N-dicarbazolyl-3,5-benzene), mCP derivative and spiro derivative Being one substance. In addition, the light emitting layer may include a phosphorescent organic metal complex having one central metal selected from the group consisting of Ir, Pt, Tb, and Eu as a dopant material. Further, the phosphorescent organic metal complex may be one selected from the group consisting of PQIr, PQIr (acac), PQ ₂ Ir (acac), PIQIr (acac) and PtOEP.

Next, an electron transport layer (ETL) 250 is formed on the emission layers 241, 243, and 245 of the R, G, and B pixels. The electron transport layer 250 is a layer that facilitates the transport of electrons to the light emitting layers 241, 243, 245 of the R, G, B pixels, for example, a polymer material such as PBD, TAZ, spiro-PBD or Alq3, BAlq, It can be formed using a low molecular weight material such as SAlq.

Subsequently, although not shown in the drawings, an electron injecting layer (HTL) may be formed on the electron transport layer 250. The electron injection layer facilitates the injection of electrons into the light emitting layers 241, 243 and 245 of R, G, and B pixels. For example, Alq3 (tris (8-quinolinolato) aluminum), LiF (Lithium Fluoride), and gallium mixture (Ga complex), can be formed using PBD.

The electron transport layer 250 and the electron injection layer may be formed using a vacuum deposition method, a spin coating method, an inkjet printing method, or a laser thermal transfer method.

Accordingly, the organic layer 220 including the auxiliary hole injection layer 222a, the hole injection layer 224, the hole transport layer 230, the light emitting layers 241, 243 and 245 of the R, G, and B pixels, the electron transport layer 250, and the electron injection layer. ).

Subsequently, an upper electrode 260 is formed on the organic layer 220. The upper electrode 260 is formed on the lower electrodes 211, 213, and 215, and the upper electrode 260 serves as a cathode electrode. When the upper electrode 260 is formed as a transparent electrode in the front light emitting structure, a conductive metal having a low work function is formed of one material selected from the group consisting of Mg, Ca, Al, Ag, and alloys thereof to emit light. It is formed to a thickness thin enough to transmit.

As a result, the lower electrodes 211, 213, 215, the upper electrode 260 positioned on the lower electrodes 211, 213, 215, and the lower electrodes 211, 213, 215, and the upper electrode 260 are formed, and at least R, G pixels emitting layers 241, 243. And a top emission organic light emitting display device including an organic layer 220 including a light emitting layer 245 of a B pixel formed of a common layer.

(Example 2)

In the full-color organic light emitting display device according to Embodiment 2 of the present invention, as shown in FIG. The film is formed in the same manner as in Example 1.

The hole injection layer 224 is formed as a common layer on the lower electrodes 211, 213, and 215. Subsequently, an auxiliary hole injection layer 222b is formed on the hole injection layer 224 of the R pixel region I. The auxiliary hole injection layer 222b is formed of the same material as the hole injection layer 224, in order to satisfy an optimized optical path of red (R) light, which is a wavelength generated from the light emitting layer 241 of the R pixel. It is formed to a thickness of 250Å. Next, a hole transport layer 230 is formed as a common layer on the hole injection layer 224 including the auxiliary hole injection layer 222b.

Subsequently, light emitting layers 241, 243, and 245 of R, G, and B pixels are formed on the hole transport layer 230. The light emitting layers 241 and 243 of the R and G pixels are formed of phosphorescent light emitting layers, and the light emitting layer 245 of the B pixel is formed of a fluorescent light emitting layer to act as a hole suppression layer, and is formed by patterning the light emitting layers 241 and 243 of the R and G pixels. And the light emitting layer 245 of B pixel is formed as a common layer.

Next, an electron transport layer (ETL) 250 is formed on the light emitting layers 241, 243, and 245 of the R, G, and B pixels, and a cathode electrode is formed as an upper electrode 260 on the electron transport layer 250. To form a full emission full color organic light emitting display device.

(Example 3)

In the full-color organic light emitting display device according to Embodiment 3 of the present invention, as shown in FIG. 4, only the positions of the auxiliary hole transport layers are different from each other, and other hole injection layers, light emitting layers of R, G, and B pixels, and the like. An organic film is formed similarly to Example 1.

The hole injection layer 224 and the hole transport layer 230 are formed as common layers on the lower electrodes 211, 213, and 215. An auxiliary hole transport layer 222c is formed on the hole transport layer 230 of the R pixel region I. The auxiliary hole transport layer 222c is formed of the same material as that of the hole transport layer 230. The auxiliary hole transport layer 222c has a thickness of 150 to 250 mW to satisfy an optimized optical path of red (R) light, which is a wavelength generated from the light emitting layer 241 of the R pixel. To form.

Subsequently, light emitting layers 241, 243, and 245 of R, G, and B pixels are formed on the hole transport layer 230 including the auxiliary hole transport layer 222c. The light emitting layers 241 and 243 of the R and G pixels are formed of phosphorescent light emitting layers, and the light emitting layer 245 of the B pixel is formed of a fluorescent light emitting layer to act as a hole suppression layer, and is formed by patterning the light emitting layers 241 and 243 of the R and G pixels. And the light emitting layer 245 of B pixel is formed as a common layer.

Next, an electron transport layer (ETL) 250 is formed on the light emitting layers 241, 243, and 245 of the R, G, and B pixels, and a cathode electrode is formed as an upper electrode 260 on the electron transport layer 250. To form a full emission full color organic light emitting display device.

Hereinafter, preferred examples are provided to aid the understanding of the present invention. However, the following experimental examples are only for helping understanding of the present invention, and the present invention is not limited to the following experimental examples.

Experimental Example 1

The lower electrode was cut by Corning's 15Ω / cm ² (1200Å) ITO glass substrate into 50mm * 50mm * 0.7mm and ultrasonically cleaned in isopropyl alcohol and pure water for 5 minutes. Thereafter, ultraviolet rays were irradiated for 30 minutes, exposed to ozone (O ₃ ), washed, and a glass substrate was mounted on the vacuum deposition apparatus.

First, IDE 406, a known material, was vacuum deposited on the glass substrate as a hole injection layer. In the G pixel region, the auxiliary hole injection layer was formed to be 200 μs on the lower electrode in the R pixel area, and the hole injection layer was formed to have a total thickness of 250 μs. The hole injection layer was formed to have a thickness of 50 μs in the B pixel area. Formed. Subsequently, the hole transport layer was formed by vacuum deposition to a thickness of 150 Å on the R, G, and B pixel areas using an IDE 320 as a material for forming the hole transport layer. After the hole transport layer was formed, a light emitting layer of G pixel was formed in the G pixel region with the known green host TMM004 300Å and the dopant CD33 13% in the G pixel region, and TMM004 300Å and the dopant TER004 in the R pixel region. It was formed at 20%. Subsequently, a light emitting layer of R, G, and B pixels was formed on the upper side including the light emitting layers of the R and G pixels by using 2% of BH215 100 Hz and BD052 as known blue fluorescent hosts. Subsequently, an electron transport layer is formed on the light emitting layer of the R, G, and B pixels. The electron transport layer was formed to a thickness of 200 kPa using Alq3 which is a known material. Next, LiF, which is an alkali metal halide, is deposited to a thickness of 5 kV as an electron injection layer on the electron transport layer.

 An organic light emitting display device was manufactured by forming a cathode electrode by vacuum deposition to a thickness of 10Å and 100Å using Al and Ag as upper electrodes, respectively.

Experimental Example 2

The lower electrode was cut by Corning's 15Ω / cm ² (1200Å) ITO glass substrate into 50mm * 50mm * 0.7mm and ultrasonically cleaned in isopropyl alcohol and pure water for 5 minutes. Thereafter, ultraviolet rays were irradiated for 30 minutes, exposed to ozone (O ₃ ), washed, and a glass substrate was mounted on the vacuum deposition apparatus.

First, IDE 406, a known material, was vacuum deposited on the glass substrate as a hole injection layer. A total hole thickness of 250 μs was formed in the G pixel area, 50 μs in the R pixel area, and 200 μs in the auxiliary hole injection layer and 50 μs in the hole injection layer. Subsequently, the hole transport layer was formed by vacuum deposition to a thickness of 150 B on the R, G, and B pixel areas using an IDE 320 as a material for forming the hole transport layer. After the hole transport layer was formed, a light emitting layer of G pixel was formed on the G pixel region with the known green host TMM004 300Å and the dopant CD33 13% in the G pixel region, and TMM004 300Å and the dopant TER004 in the R pixel region. It was formed at 20%. Subsequently, the light emitting layer of R, G, and B pixels was formed on the upper side including R and the light emitting layer of the G pixel with 2% of BH215 100 'and BD052 as known blue fluorescent hosts. Subsequently, an electron transport layer is formed on the light emitting layer of the R, G, and B pixels. The electron transport layer was formed to a thickness of 200 kPa using Alq3 which is a known material. Next, LiF, which is an alkali metal halide, is deposited to a thickness of 5 kV as an electron injection layer on the electron transport layer.

 An organic light emitting display device was fabricated by using an Al and Ag as the upper electrode, vacuum evaporation to a thickness of 10 Å and 200 각각, respectively, and forming a cathode electrode.

Comparative Example 1

Unlike Experimental Examples 1 and 2, an organic light emitting display device was manufactured by performing the same experiment as described above without forming an auxiliary hole injection layer.

In Experimental Example 1, the light emission efficiency was 56 cd / A in the G pixel region, the CIE color coordinates were x = 0.34 and y = 0.63, and the light emission efficiency was 11 cd / A in the R pixel region, and the xIE color coordinate was x = 0.68, y = 0.32, the luminous efficiency was 2.3 cd / A in the B pixel, the CIE color coordinates were x = 0.14, y = 0.11, and the color reproducibility was 75.5%.

In Experimental Example 2, the luminous efficiency was 66 cd / A in the G pixel, the CIE color coordinates were x = 0.26, y = 0.69, the luminous efficiency was 10 cd / A in the R pixel, and the xIE color coordinates were x = 0.66, y =. 0.34, the luminous efficiency was 1.2 cd / A, the CIE color coordinates were x = 0.15, y = 0.07, and the color reproducibility was 90.5%.

As described above, according to the present invention, an auxiliary hole injection layer or an auxiliary hole transport layer is formed in the hole injection layer or the hole transport layer formed in the R, G, and B pixel regions by using a fine metal mask or a laser thermal transfer method. And the light emitting layer of the B pixel is formed as a common layer on the entire surface of the substrate so that the wavelength of the red (R) light is different from that of the green (G) and blue (B) light. Accordingly, a full emission organic light emitting display device capable of eliminating the problem of deteriorating efficiency characteristics, simplifying a process, improving color coordinates, and improving device characteristics can be obtained.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (21)

A substrate having R, G, and B pixel regions; A lower electrode formed on the R, G, and B pixel areas on the substrate; An organic layer including a hole injection layer formed on the lower electrode and a light emitting layer of R, G, and B pixels; And An upper electrode formed on the organic layer; The light emitting layer of the B pixel is formed on the entire surface of the substrate including the light emitting layers of the R and G pixels as a common layer, and an auxiliary hole injection layer is formed on the lower electrode in the R pixel area. . The method of claim 1, The auxiliary hole injection layer is a full color organic light emitting display device, characterized in that formed of the same material as the hole injection layer. The method of claim 1, The auxiliary hole injection layer is a full color organic light emitting display device, characterized in that formed to a thickness of 150 to 250Å. The method of claim 1, And the hole injection layer and the auxiliary hole injection layer are formed using any one selected from the group consisting of CuPc, TNATA, TCTA, TDAPB, TDATA, PANI, and PEDOT. The method of claim 1, The auxiliary hole injection layer is a full color organic light emitting display device, characterized in that located on the hole injection layer of the R pixel region. The method of claim 1, And a hole transport layer between the hole injection layer and the light emitting layer of the R, G, and B pixels. A substrate having R, G, and B pixel regions; A lower electrode formed on the R, G, and B pixel areas on the substrate; An organic layer including a hole transport layer formed on the lower electrode and a light emitting layer of R, G, and B pixels; And An upper electrode formed on the organic layer; The light emitting layer of the pixel B is a common layer and is formed on the entire surface of the substrate including the light emitting layers of the R and G pixels, and an auxiliary hole transport layer is formed on the hole transport layer in the R pixel area. The method of claim 7, wherein And the auxiliary hole transport layer is formed of the same material as the hole transport layer. The method of claim 7, wherein The auxiliary hole transport layer is a full color organic light emitting display device, characterized in that formed to a thickness of 150 to 250Å. The method of claim 7, wherein And the auxiliary hole transporting layer and the hole transporting layer are formed using any one selected from the group consisting of NPD, TPD, s-TAD, MTDATA, and PVK. The method of claim 7, wherein A full color organic light emitting display device further comprising a hole injection layer between the lower electrode and the hole transport layer. Providing a substrate having R, G, B pixel regions; Forming a lower electrode on the R, G, and B pixel areas on the substrate; An auxiliary hole injection layer is formed on the lower electrode of the R pixel region, a hole injection layer is formed on the lower electrode including the auxiliary hole injection layer, and light emitting layers of R and G pixels are patterned on the hole injection layer; Forming an organic film including a light emitting layer of B pixels as a common layer on an entire surface of the substrate including light emitting layers of the R and G pixels; And Forming an upper electrode on the organic layer; and manufacturing a full color organic light emitting display device. The method of claim 12, The auxiliary hole injection layer is formed using any one selected from the group consisting of CuPc, TNATA, TCTA, TDAPB, TDATA, PANI, and PEDOT. The method of claim 12, The auxiliary hole injection layer is a manufacturing method of a full color organic light emitting display device, characterized in that formed in a thickness of 150 to 250Å. The method of claim 12, And forming the auxiliary hole injection layer by patterning by using a fine pattern mask or a laser thermal transfer method. The method of claim 12, And forming a hole transport layer between the hole injection layer and the light emitting layer of the R, G, and B pixels. Providing a substrate having R, G, B pixel regions; Forming a lower electrode on the R, G, and B pixel areas on the substrate; Forming a hole transport layer on the lower electrode, forming an auxiliary hole transport layer on the hole transport layer of the R pixel region, and forming a light emitting layer of R and G pixels on the hole transport layer including the auxiliary hole transport layer; Forming an organic film including a light emitting layer of B pixels as a common layer on the entire surface of the substrate including light emitting layers of R and G pixels; And Forming an upper electrode on the organic layer; and manufacturing a full color organic light emitting display device. The method of claim 17, Wherein the auxiliary hole transport layer is formed using any one selected from the group consisting of NPD, TPD, s-TAD, MTDATA, and PVK. The method of claim 17, The auxiliary hole transport layer is a manufacturing method of a full color organic light emitting display device, characterized in that formed in a thickness of 150 to 250Å. The method of claim 17, And forming the auxiliary hole transport layer by patterning by using a fine pattern mask or a laser thermal transfer method. The method of claim 17, And forming a hole injection layer between the lower electrode and the hole transport layer.

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