KR100695231B1 - Apparatus and Method for Processing Substrates - Google Patents

Abstract

The present invention relates to a baking unit for performing a baking process, a plurality of heating units for sequentially heating the substrate, and at least one of transferring the substrate from one of the heating units to another of the heating units And a housing surrounding the transfer robot and the heating units and the transfer robot.

According to the present invention, when transferring a substrate from one of a plurality of heating units performing one bake process to another, the temperature on the substrate increases during transfer by transferring directly by a separate transfer robot installed inside the bake unit. Gradient can be minimized.

Description

Apparatus and method for treating a substrate}

1 is a configuration diagram schematically showing a substrate processing apparatus according to the present invention;

2 is a perspective view showing an example of the processing unit shown in FIG. 1;

3 to 7 is a block diagram showing a baking unit according to various embodiments of the present invention;

8 is a flowchart illustrating a method of processing a substrate according to the present invention.

Explanation of symbols on the main parts of the drawings

10: index portion 20: processing portion

30 interface unit 40 exposure unit

100: processing chamber 160: main feed robot

200: baking unit 220: heating unit

240: auxiliary transport robot 260: housing

The present invention relates to an apparatus and method for processing a substrate, and to an apparatus and method for processing a substrate in a photolithography process.

In general, various processes such as cleaning, deposition, photolithography, etching, and ion implantation are performed to manufacture a semiconductor device. Photolithography processes performed to form patterns play an important role in achieving high integration of semiconductor devices.

A system for performing a photolithography process includes an application unit, an exposure unit, a developing unit, and a baking unit, and the wafer sequentially includes the baking unit, the coating unit, the baking unit, the exposure unit, the baking unit, the developing unit, and the baking unit. The process is performed while moving. A main transfer robot is provided for the wafer to sequentially go through each step, and the main transfer robot sequentially transfers the wafer to each step.

The baking process performed by the baking unit in the above-mentioned steps means a process of heating the wafer to a predetermined temperature by a hot plate or an oven. As described above, the baking step is performed before and after the coating step by the coating unit, the exposure step by the exposure unit, and the developing step by the developing unit, and the wafer is heated to a predetermined temperature suitable for each step.

Among the baking processes, in particular, the baking process carried out after the developing process is called a postbake process. The postbaking process takes place at a higher temperature (typically 10-30 minutes at 100-140 ° C.) than the previous bake process, in order to harden the photoresist and improve the etch resistance of the photoresist. Is done.

In addition, the postbaking process may cause the photoresist to flow down little by little to modify the shape of the photoresist edge. Therefore, the postbaking process is also referred to as a photoresist flow process. This is to reduce the space width of the photoresist pattern such as the opening size of the photoresist pattern or the wiring connecting various elements by applying heat to the photoresist pattern formed on the wafer to cause the flow of the photoresist.

In the photoresist flow process, the bake unit includes a plurality of heating units, and the wafer is heated to rise by a predetermined temperature while sequentially passing through the plurality of heating units. This is because if the wafer is heated to a high temperature at one time by one heating unit, heat is excessively concentrated in a specific portion adjacent to the heating unit, so that the temperature of the specific portion is excessively increased and the temperature gradient on the wafer is increased. Because.

Keeping the temperature of the wafer surface uniform is very important for smoothly performing the photoresist flow process. This is because if the temperature of the wafer surface is uneven, the flow amount of the photoresist varies depending on the temperature, and the opening size of the pattern may vary depending on the position. The high temperature portion has a narrow opening size or space width because a large amount of photoresist flows, and the low temperature portion has a wide opening size or space width because a small amount of photoresist flows. Thus, the wafer is heated step by step through a plurality of heating units in order to reduce the deviation of the opening size or the space width.

Conventionally, as described above, the process is performed while the wafer is sequentially moved to the bake unit, the coating unit, the bake unit, the exposure unit, the bake unit, the developing unit, and the bake unit by the main transfer robot. In addition, even when performing the photoresist flow process described above, the wafer was moved by the main transfer robot.

Therefore, in the photoresist flow process, the main transfer robot transferred the wafer after the developing process from the developing unit to the baking unit, and a plurality of heating units were provided in the baking unit. The wafer transferred to the bake unit needed a transfer means capable of sequentially moving each heating unit, and the wafer was transferred to each heating unit by the main transfer robot.

However, since the main role of the main transfer robot is to transfer the wafer to each of the application unit, exposure unit, development unit, and bake units, it should be located outside the bake unit. Therefore, when the wafer is transferred by the main transfer robot, the wafer is inevitably exposed to the outside of the baking unit.

In addition, the bake unit maintains a high temperature by the plurality of heating units, but the outside of the bake unit maintains a lower temperature than the inside of the bake unit, so that the wafer is inevitably cooled when exposed to the outside of the bake unit. In particular, since the main transport robot located outside the bake unit maintains a normal temperature, the portion of the wafer held by the main transport robot in contact with the main transport robot is rapidly cooled by the main transport robot at room temperature. The temperature gradient of the phase increases rapidly.

An object of the present invention is to provide a substrate processing apparatus and method which can prevent the wafer from being exposed to the outside of the baking unit during the baking process.

Another object of the present invention is to provide a substrate processing apparatus and method having an auxiliary transport robot capable of transporting a wafer in a baking process, separately from the main transport robot transporting a wafer in each process.

It is still another object of the present invention to provide a substrate processing apparatus and method capable of smoothly performing a photoresist flow process by making the temperature on a wafer substantially uniform.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to the present invention, a baking unit that performs a baking process for a substrate includes a plurality of heating units that sequentially heat the substrate, and transfer the substrate from one of the heating units to another of the heating units. At least one transfer robot and a housing surrounding the heating units and the transfer robot.

The transfer robot may transfer the substrate by a translational motion.

The transfer robot may transfer the substrate by a rotational movement.

The bake unit may be used in a photoresist flow process.

The bake unit may further include a blocking member capable of preventing heat loss generated in each of the heating units.

According to the present invention, an apparatus for processing a substrate in a baking process includes transferring the substrate between a coating unit and a developing unit, a plurality of bake units and between the coating unit and the bake units or between the developing unit and the bake units. A processing unit provided with a main transfer robot, wherein the baking unit includes a plurality of heating units for sequentially heating the substrate, and at least one of transferring the substrate from one of the heating units to another of the heating units. At least one auxiliary transport robot, characterized in that it comprises a housing surrounding the heating units and the auxiliary transport robot.

The heating units may be arranged in a direction generally parallel to the traveling direction of the main transport robot.

The heating units may be arranged in a direction substantially perpendicular to the traveling direction of the main transport robot.

According to the present invention, a method of processing a substrate using a plurality of heating units that are sequentially set to increase a heating temperature includes disposing a plurality of heating units and at least one auxiliary transfer robot in one housing, and a main transfer. Transferring the substrate to any one of the heating units by a robot and heating the substrate to a set temperature; and transferring the substrate from one of the heating units to another of the heating units by the auxiliary transfer robot. And then heating to a set temperature, and recovering the substrate, which has been heated, by a main transfer robot.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 8. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

In the present embodiment, the wafer W is described as an example, but the present invention is not limited thereto and may be applied to various kinds of substrates such as glass substrates.

1 is a configuration diagram schematically showing a substrate processing apparatus 1 according to the present invention. The substrate processing apparatus 1 performs a photolithography process on a wafer. Referring to FIG. 1, the substrate processing apparatus 1 includes an index unit 10, a processing unit 20, and an interface unit 30, which are sequentially arranged side by side in one direction. The index unit 10 has a cassette holder 12 and a robot movement path 14. Cassettes 12a in which semiconductor substrates such as a wafer are accommodated are placed in the cassette holder 12. The robot moving path 14 is provided with a robot 14a for transferring wafers between the cassette 12a placed on the cassette holder 12 and the processing unit 20. The robot 14a has a structure that can be moved in a direction perpendicular to the above-described one direction and a vertical direction on a horizontal plane. Since the structure for transferring the robot 14a in the horizontal direction and the vertical direction can be easily configured by those skilled in the art, detailed description thereof will be omitted.

The processing unit 20 performs a coating step of applying a photoresist such as a photoresist to the wafer and a developing step of removing photoresist in an exposed region or the opposite region from the wafer on which the exposure process is performed. The processing unit 20 is provided with an application unit 120a, a developing unit 120b, and a baking unit 140.

One side of the processing unit 20 is provided with an interface unit 30 that is connected to the exposure unit 40. In the interface unit 30, a robot 32 for transferring a wafer between the exposure unit 40 and the processing unit 20 is disposed. The robot 32 has a structure that can be moved in a direction perpendicular to the above-described one direction.

2 is a perspective view illustrating an example of the processing unit 20 illustrated in FIG. 1. The processing unit 20 has a first processing chamber 100a and a second processing chamber 100b, and you have a processing chamber 100. The first processing chamber 100a and the second processing chamber 100b have a stacked structure. Units for performing the coating process are provided in the first processing chamber 100a, and units for performing the developing process are provided in the second processing chamber 100b. That is, the coating units 120a and the baking units 140 are provided in the first processing chamber 100a, and the developing units 120b and the baking units 140 are provided in the second processing chamber 100b. According to an example, the first processing chamber 100a is disposed above the second processing chamber 100b. Alternatively, the first processing chamber 100a may be disposed below the second processing chamber 100b. Due to the above structure, the wafer has the index unit 10, the first processing chamber 100a, the interface unit 30, the exposure unit 40, the interface unit 30, the second processing chamber 100b, and the index unit 10. ) Will be moved sequentially. That is, during the photolithography process, the wafer is moved in a loop in the vertical direction.

The first moving path 160a is provided in the center of the first processing chamber 100a for a long time. One end of the first moving path 160a is connected to the index unit 10, and the other end of the first moving path 160a is connected to the interface unit 30. The baking units 140 are arranged in a line along the first moving path 160a on one side of the first moving path 160a, and the coating units 120a are arranged on the other side of the first moving path 160a. It is arranged in a line along 160a. In addition, the baking units 140 and the coating unit 120a are arranged to be stacked in a plurality of up and down. The first moving path 160a is provided with a first main transfer robot 162a for transferring a wafer between the interface unit 30, the coating unit 120a, the baking unit 140, and the index units 10. A guide rail 164a is provided on the first moving path 160a so that the first main feed robot 162a moves linearly.

The second moving path 160b is provided in the center of the second processing chamber 100b for a long time. One end of the second moving path 160b is connected to the index unit 10, and the other end of the second moving path 160b is connected to the interface unit 30. The baking units 140 are arranged in a line along the second moving path 160b on one side of the second moving path 160b and the developing units 120b on the other side of the second moving path 160b. It is arranged in a line along 160b. In addition, the baking units 140 and the developing unit 120b are arranged to be stacked in a plurality of up and down. The second moving path 160b is provided with a second main transfer robot 162b for transferring the wafer between the interface unit 30, the developing unit 120b, the bake unit 140, and the index units 10. A guide rail 164b is provided on the second moving path 160b so that the second main feed robot 162b moves linearly.

Unlike the above, a first moving path may be disposed on one side of the first processing chamber, and coating units and baking units may be disposed on the other side of the first processing chamber. In addition, a second moving path may be disposed at one side of the second processing chamber, and developing units and baking units may be disposed at the other side of the second processing chamber.

3 to 7 are block diagrams illustrating the baking unit 200 according to various embodiments of the present disclosure.

3 and 4, the bake unit 200 includes a first heating unit 220a, a second heating unit 220b, an auxiliary transfer robot 240, and a housing 260.

The first heating unit 220a and the second heating unit 220b are arranged in a direction substantially parallel to the longitudinal direction of the transfer path 160, that is, the traveling direction of the main transfer robot 162. However, in contrast, the first heating unit 220a and the second heating unit 220b may be arranged in a direction substantially perpendicular to the longitudinal direction of the transfer path 160, that is, the traveling direction of the main transfer robot 162. .

The first heating unit 220a and the second heating unit 220b may have openings (not shown) through which wafers can enter and exit in directions facing each other. As described above, since the wafer must be heated secondly through the second heating unit 220b after being first heated by the first heating unit 220a, the opening is first removed from the first heating unit 220a. It serves as a passage through which the wafer moves to the two heating units 220b.

The auxiliary transfer robot 240 serves to transfer the wafer from the first heating unit 220a to the second heating unit 220b. The auxiliary transfer robot 240 may be located between the first heating unit 220a and the second heating unit 220b as shown in FIG. 3, and the first heating unit 220a as shown in FIG. 4. ) And the second heating unit 220b.

The auxiliary transfer robot 240 may be exercised in various forms. As shown in FIG. 3, the auxiliary transfer robot 240 holding the wafer in the first heating unit 220a performs the translational motion to the second heating unit 220b and then moves the wafer to the second heating unit 220b. Can be passed. In addition, as shown in FIG. 4, the auxiliary transfer robot 240 holding the wafer in the first heating unit 220a may rotate 180 ° to transfer the wafer to the second heating unit 220b. Gripping of the wafer by the secondary transfer robot 240 may be accomplished by electrostatic chucks or mechanical clamps and various other methods.

The housing 260 surrounds the first heating unit 220a, the second heating unit 220b, and the auxiliary transfer robot 240. Since the baking unit 200 is for heating the wafer to a predetermined temperature, when the first heating unit 220a and the second heating unit 220b are exposed to the outside, heat cannot be concentrated on the wafer and a large amount of heat loss is achieved. This happens. Therefore, the housing 260 may be provided to prevent heat in the baking unit 200 from being lost to the outside.

At least one opening (not shown) may be formed at one side of the housing 260 facing the transfer path 160 to allow the wafer to enter and exit. The opening is a passage for receiving the wafer transferred through the main transport robot 162 into the bake unit 200 or for ejecting the wafer from the bake unit 200 to the main transport robot 162. In the case where a plurality of openings are provided, one opening can be used as a passage for receiving, and the other opening can be used as a passage for discharge.

In addition, each of the first heating unit 220a and the second heating unit 220b may include a blocking member (not shown). Since the first heating unit 220a and the second heating unit 220b are for heating the wafer in stages, the heat is generated when the first heating unit 220a and the second heating unit 220b are exposed to the outside. Large concentrations of heat loss can occur as it is not concentrated on the wafer. Therefore, it is possible to prevent the occurrence of heat loss by installing a blocking member to surround each of the first heating unit 220a and the second heating unit 220b.

Referring to the operation of the baking unit 200 shown in Figures 3 and 4, the main transfer robot 162 transfers the wafer to the first heating unit 220a, the transferred wafer to the first heating unit 220a By heating to a predetermined temperature. When the heating by the first heating unit 220a is completed, the auxiliary transfer robot 240 transfers the wafer to the second heating unit 220b after gripping the wafer in the first heating unit 220a. The auxiliary transfer robot 240 may transfer the wafer through a translational or rotational motion as described above.

The wafer transferred to the second heating unit 220b is heated to a predetermined temperature by the second heating unit 220b, and the wafer which has been heated is recovered by the main transfer robot 162. The recovered wafer is transferred by the main transfer robot 162 for the next process.

Next, referring to FIGS. 5 to 7, the baking unit 200 may include a first heating unit 220a, a second heating unit 220b, a third heating unit 220c, an auxiliary transfer robot 240, and a housing 260. ). This is a form in which the third heating unit 220c is added to the baking unit 200 described with reference to FIGS. 3 and 4.

As described above, in the photoresist flow process, the wafer is heated step by step by a plurality of heating units. As shown in FIGS. 3 and 4, when two heating units are provided, the first heating unit 220a primarily heats the wafer to a temperature just before the photoresist on the wafer reacts, and the second heating unit ( 220b) may heat the wafer secondary to a temperature at which the photoresist reacts. Alternatively, a larger number of heating units may be provided to further advance the photoresist flow process.

Since the arrangement method of the first heating unit 220a, the second heating unit 220b, and the third heating unit 220c and the method of forming the opening (not shown) are similar to those described above, they will be omitted.

As shown in FIG. 5, one auxiliary transport robot 240 may be provided, and the auxiliary transport robot 240 may be provided from the first heating unit 220a to the second heating unit 220b and the second heating unit 220b. ) To transfer the wafer to the third heating unit 220c. That is, the auxiliary transport robot 240 may move from the first heating unit 220a to the third heating unit 220c, and the auxiliary transport robot 240 may translate.

6 and 7, two auxiliary transfer robots 240a and 240b may be provided. The first auxiliary transfer robot 240a transfers the wafer from the first heating unit 220a to the second heating unit 220b, and the second auxiliary transfer robot 240b is heated to the third heating unit from the second heating unit 220b. It serves to transfer the wafer to the unit 220c.

The auxiliary transport robots 240a and 240b shown in FIG. 6 perform a translational motion similarly to the auxiliary transport robot 240 shown in FIG. 3, and the auxiliary transport robots 240a and 240b shown in FIG. 7 are shown in FIG. 4. Like the auxiliary transfer robot 240 is a rotational movement. In addition, the operation method of the auxiliary transfer robot (240a, 240b) is the same as FIG.

As described above, the baking unit 200 may include a housing 260 for preventing heat loss, and each heating unit 220a, 220b, 220c may also have a blocking member (not shown) to prevent heat loss. ) May be provided.

Hereinafter, a method of treating a substrate will be described with reference to FIGS. 3 and 8.

First, a plurality of heating units 220a and 220b and at least one auxiliary transfer robot 240 are disposed in one housing 260 (S10). One housing 260 becomes one baking unit 200, and independently performs one baking process.

Next, after the substrate is transferred to the first heating unit 220a by the main transfer robot 162, the substrate is heated to the set temperature by the first heating unit 220a (S20).

Next, the substrate is transferred from the first heating unit 220a to the second heating unit 220b by the auxiliary transfer robot 240 and then heated to the set temperature by the second heating unit 220b (S30).

Next, the substrate is heated is recovered by the main transfer robot 162 (S40).

According to the present invention, one bake unit 200 includes an auxiliary transfer robot 240, and the substrate is transferred between the plurality of heating units by the auxiliary transfer robot 240.

According to the present invention, since the wafer can be prevented from being exposed to the outside of the baking unit during the baking process, the temperature gradient of the wafer generated during transfer can be minimized.

According to the present invention, since the transfer robot for transferring the wafer during the baking process is located inside the baking unit, it is possible to minimize the temperature gradient of the wafer generated during the transfer.

According to the present invention, the photoresist flow process can be performed smoothly by making the temperature on the wafer substantially uniform.

According to the present invention, it is possible to minimize the heat loss generated in the heating unit when heating the wafer.

Claims (10)

delete delete delete In the baking unit performing a baking process for a substrate, A plurality of heating units for sequentially heating the substrate; At least one transfer robot for transferring the substrate from one of the heating units to another of the heating units; A housing surrounding the heating units and the transfer robot, The bake unit is a baking unit, characterized in that used in the photoresist flow (process). The method of claim 4, wherein The baking unit further comprises a blocking member capable of preventing heat loss generated in each of the heating units. In the apparatus for processing a substrate in the baking step, A processing unit provided with a coating unit and a developing unit, a plurality of baking units and a main transfer robot for transferring the substrate between the coating unit and the baking units or between the developing unit and the baking units, The baking unit, A plurality of heating units for heating the substrate; At least one auxiliary transfer robot for transferring the substrate from one of the heating units to another of the heating units; And a housing surrounding the heating units and the auxiliary transfer robot. The method of claim 6, And the heating units are arranged in a direction substantially parallel to a traveling direction of the main transport robot. The method of claim 6, And the heating units are arranged in a direction substantially perpendicular to the traveling direction of the main feed robot. In the method for processing a substrate using a plurality of heating units set to sequentially increase the heating temperature, Placing a plurality of heating units and at least one auxiliary transfer robot in a housing; Transferring the substrate to one of the heating units by a main transfer robot and heating the substrate to a set temperature; Transferring the substrate from one of the heating units to another of the heating units by the auxiliary transfer robot and then heating the substrate to a set temperature; And recovering the substrate, which has been heated, by a main transfer robot. The method of claim 6, The heating units, A first heating unit that primarily heats the substrate; And And a second heating unit for secondarily heating the substrate heated by the first heating unit.

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