KR100794586B1 - Substrate processing apparatus and substrate drying method using the same - Google Patents

Abstract

The present invention discloses a substrate processing apparatus for supplying a dry gas to a cleaned substrate and drying the substrate, and a method for drying the substrate using the same, wherein the dry gas supplied to the center of the gas injection member is provided inside the gas injection member. It is characterized in that the spray on the substrate while moving along the formed spiral flow path.

According to this aspect, it is possible to provide a substrate processing apparatus and a method of drying a substrate using the same, which can eliminate drying defects occurring at the center of the substrate and can increase the drying efficiency of the substrate.

Description

Substrate processing apparatus and substrate drying method using the same {APPARATUS FOR TREATING SUBSTRATES AND METHOD FOR DRYING SUBSTRATES}

1 and 2 are a schematic perspective view and a cross-sectional view showing an example of a substrate processing apparatus according to the present invention;

3 is a schematic cross-sectional view of the nozzle shown in FIG.

4 is a cross-sectional view taken along line AA ′ of FIG. 3;

5 is a schematic cross-sectional view shown for explaining the operating state of the substrate processing apparatus according to the present invention;

6 and 7 are schematic operational state diagrams of the nozzle shown in FIG. 5.

<Description of Symbols for Main Parts of Drawings>

110 substrate support member 120 lower cover member

130: upper cover member 140: first nozzle member

142: nozzle 143: flow path

150: gas supply member 151: first gas supply pipe

152: second gas supply pipe 154: valve

155 control unit 160 second nozzle member

170: third nozzle member 180: pressure reducing member

The present invention relates to a semiconductor manufacturing apparatus and method, and more particularly, to a substrate cleaning apparatus for cleaning and drying a substrate and a method for drying the substrate using the same.

In general, as semiconductor devices become more dense, highly integrated, and higher in performance, micronization of circuit patterns proceeds rapidly, and contaminants such as particles, organic contaminants, and metal contaminants remaining on the substrate surface have a great effect on device characteristics and production yield. Get mad. For this reason, the cleaning process for removing various contaminants adhering to the substrate surface is very important in the semiconductor manufacturing process, and the substrate cleaning process is performed at the front and rear stages of each unit process for semiconductor manufacturing.

In a general cleaning drying apparatus, after fixing a substrate to a chuck member capable of processing a single substrate, the chemical liquid or deionized water is supplied to the substrate through a spray nozzle on the upper portion while rotating the substrate, and the chemical liquid or deionized water is applied by centrifugal force. The cleaning process is achieved by spreading the light over the front surface of the substrate. As described above, in the single wafer type washing and drying apparatus, a drying step of drying the substrate with a drying gas is performed after cleaning the substrate using a chemical liquid or deionized water.

By the way, when the dry gas is supplied to the substrate using the hermetic cover during the drying process, there is almost no difference in supply time and supply flow rate of the dry gas at the center and the periphery of the substrate due to the fast diffusion rate of the dry gas, As a result, the periphery where the influence of the centrifugal force due to the rotation of the substrate is large is well dried, but there is a problem that a poor drying occurs in the center of the substrate where the influence of the centrifugal force is relatively small.

Therefore, the present invention was created to solve the problem in view of the problems of the conventional conventional cleaning and drying apparatus as described above, an object of the present invention is to improve the drying efficiency of the substrate during the cleaning drying of the substrate It is to provide a processing apparatus and method.

In order to achieve the above object, a substrate processing apparatus according to the present invention includes a substrate support member on which a substrate is placed and rotatable; And a gas injection member in which a drying gas is injected onto the substrate placed on the substrate support member, and a flow path is formed therein so that the drying gas supplied to the center moves around the center.

In the substrate processing apparatus according to the present invention having the configuration as described above, the flow passage is preferably formed in a spiral shape.

According to one aspect of the invention, the apparatus comprises a first gas supply member for supplying a dry gas to the center of the gas injection member; It is preferable to further include; a second gas supply member for supplying a dry gas to the peripheral portion of the gas injection member.

According to another aspect of the invention, it is preferable that the apparatus further comprises a control unit for controlling the operation of the first and second gas supply member to supply the dry gas to the central portion and the peripheral portion of the gas injection member in sequence; .

In order to achieve the above object, the substrate drying method according to the present invention is a method for drying a substrate by supplying a drying gas on the substrate, the drying gas supplied to the center of the gas injection member along the flow path formed therein The substrate is dried by spraying a dry gas moving along the flow path through the injection holes of the gas injection member connected to the flow path while moving around the center portion to the periphery.

In the substrate drying method according to the present invention having the configuration as described above, in order to compensate for the hydraulic loss of the dry gas generated while the dry gas supplied to the center of the gas injection member moves to the peripheral portion along the flow path, It is preferable to supply dry gas to the peripheral part after dry gas is supplied to the center part of a gas injection member.

According to one feature of the invention, the drying gas is preferably supplied on a rotating substrate.

Hereinafter, a substrate treating apparatus and a method of drying a substrate using the same according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First of all, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if displayed on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

(Example)

1 and 2 are schematic perspective views and cross-sectional views showing an example of a substrate processing apparatus according to the present invention, Figure 3 is a schematic cross-sectional view of the nozzle shown in Figure 2, Figure 4 is a AA 'of FIG. Sectional view along the line.

1 to 4, the substrate processing apparatus 100 performs processing such as chemical cleaning, rinsing, and drying while rotating the substrate W. As shown in FIG. The substrate processing apparatus 100 includes a substrate support member 110, a lower cover member 120, an upper cover member 130, a first nozzle member 140, and a second having a chuck 112 on which the substrate W is placed. The nozzle member 160, the third nozzle member 170, and the pressure reducing member 180 are included.

The substrate support member 110 supports the substrate during the processing process. The substrate support member 110 has a chuck 112, a spindle 114, and a first rotating member 116. The chuck 112 is disposed in the inner space of the lower cover member 120. The chuck 112 includes an upper surface 112a on which the substrate W is loaded, support pins 113a supporting the substrate W while being spaced apart from the upper surface 112a, and the substrate W. It has chucking pins (113b) for fixing the. The support pins 113a support the substrate spaced apart from the upper surface 112a of the chuck 112, and the chucking pins 113b chuck a portion of the edge of the substrate during the process. Spindle 114 is coupled to the lower center of the chuck 112. The spindle 114 is installed through the insertion port 124 of the lower cover member 120 and receives a rotational force from the first rotating member 116. The chuck 112 is rotated in conjunction with the spindle 114. The first rotating member 116 may include a driving unit 116a for generating rotational force, and a power transmission member 116b such as a belt or a chain for transmitting the rotational force of the driving unit 116a to the spindle 114.

Lower cover member 120 has a lower cup 122 that is open at the top and is shaped to wrap around chuck 112. The lower cup 122 has a bowl shape having a bottom surface 123a and a side surface 123b, an insertion port 124 projecting downward on the bottom surface 123a and having a passage 124a formed therein, and a pressure reducing member. It has a vacuum port 128 connected to a vacuum line 184 of 180. The spindle 114 of the substrate support member 110 passes through the passage 124a of the insertion port 124, the spindle 124a rotatably supports the spindle 114 and seals the passage 124a. The bearing 128 is installed. Although not shown, the lower cover member 120 may be provided with a discharge port for discharging the chemical and fluid.

The upper cover member 130 has an upper cup 132 that can open or close the upper portion of the lower cover member 120, and an upper portion such that the upper cup 132 opens or closes the upper portion of the lower cover member 120. And a lifting member 136 for lifting the cup 132 up and down. The upper cup 132 has a bowl shape having an upper surface 133a large enough to cover the upper portion of the lower cup 122, and a side surface 133b protruding downward from the edge of the upper surface 133a. . The upper cup 132 has an insertion port 134 protruding upward on the upper surface 133a and having a passage 134a formed therein. The upper cup 132 side surface 133b of the upper cover member 130 is in contact with the lower cup 122 side surface 123b of the lower cover member 120. The sealing member 139 is installed on the side surface 123b of the lower cup 122 in contact with the upper cup 132 to seal the space where the substrate is processed. The spindle 146 of the first nozzle member 140 passes through the passage 134a of the insertion port 134, and the bearing 134a rotatably supports the spindle 146 and seals the passage 134a. 138 is installed.

The first nozzle member 140 is for injecting dry gas onto the upper surface of the substrate W, and includes a nozzle 142, a spindle 146, a second rotating member 148, and a gas supply member 150. .

The nozzle 142 has a shape corresponding to the substrate placed on the chuck 112, and the spindle 146 is coupled to a central upper portion of the nozzle 142. The spindle 146 is installed through the insertion port 134 of the upper cover member 130, and receives the rotational force from the second rotating member 148 installed outside. The second rotating member 148 is configured to rotate the nozzle 142, and a power transmission member such as a belt for transmitting the rotational force of the driving unit 149a and the driving unit 149a to the spindle 146 to generate a rotational force. 149b. In addition, a gas supply member 150 for supplying a dry gas is connected to the nozzle 142. The gas supply member 150 is branched from the first gas supply pipe 151 connected to the upper center of the nozzle 142 through the inside of the spindle 146, and the upper periphery of the nozzle 142. It includes a second gas supply pipe 152 connected to. The first gas supply pipe 151 is connected to the dry gas supply source 153, and the valve 154 is disposed on the second gas supply pipe 152. The valve 154 opens and closes the flow of the dry gas flowing through the second gas supply pipe 152, and its operation is controlled by the controller 155.

The flow path 143 is formed in the nozzle 142 so that the dry gas supplied to the center of the nozzle 142 through the first gas supply pipe 151 may move around the center of the nozzle 142 to move to the periphery. The flow path 143 may be formed in a spiral shape having a curved portion. In addition, a flow path having a shape in which a plurality of straight segments surrounds the center may be formed. In addition, a plurality of gas injection holes 144 connected to the flow path 143 are formed on the bottom surface of the nozzle 142.

The second nozzle member 160 selectively sprays a chemical liquid or a drying gas for cleaning or drying to the bottom surface of the substrate W. The second nozzle member 160 includes a nozzle disposed on the chuck 112. 162 and a supply line 164 through which the chemical liquid and the dry gas are supplied to the nozzle 162. The supply line 164 is connected to the nozzle 162 through the spindle 114 of the substrate support member 110. The nozzle 162 has a bar shape extending from the center in the radial direction of the substrate W, and a plurality of injection holes 162a are formed on an upper surface thereof.

The third nozzle member 170 is for spraying the chemical liquid for cleaning to the upper surface of the substrate (W), the third nozzle member 170 is moved linearly in the vertical direction by the nozzle moving member 174 or the substrate (W). The nozzle 172 is rotated outward from the lower cup 122 of the lower cover member 120 at the center of the upper portion. The nozzle moving member 174 has a horizontal support 176 to which the nozzle 172 is coupled and a vertical support 178 coupled thereto and rotatable by a motor (not shown).

The decompression member 180 is for depressurizing the closed space formed by the combination of the lower cover member 120 and the upper cover member 130. The pressure reducing member 180 has a vacuum pump 182, and one end is connected to the vacuum pump 182 and the other end is connected to the vacuum port 184 of the lower cover member 120.

Although not shown, the lower cover member 120 and the chuck 112 of the substrate support member 110 may be configured to elevate relatively or individually, and the substrate W may be supported by the substrate W in a state of lifting or lowering them. The substrate 110 may be loaded into the chuck 112 of the member 110 or the unloaded substrate W may be unloaded.

The process of washing and drying a board | substrate using the substrate processing apparatus which has the above structures is as follows.

5 is a schematic cross-sectional view illustrating an operating state of the substrate processing apparatus according to the present invention, and FIGS. 6 and 7 are schematic operating state diagrams of the nozzle shown in FIG. 5.

5 to 7, the substrate W is loaded onto the chuck 112 through the open top of the lower cover member 120. The substrate W is chucked by the chucking pins 113b while being supported by the support pins 113a. The substrate W is rotated together with the chuck 112 by the operation of the first rotating member 116. do. Thereafter, the rotated substrate is cleaned and rinsed by the chemical liquid sprayed through the nozzle 172 of the third nozzle member 170.

When the cleaning and rinsing treatment of the substrate is completed, the drying treatment to the substrate W is performed. The drying treatment of the substrate proceeds quickly and in an environment below atmospheric pressure so that water spots do not occur on the substrate surface. Looking at the drying process in detail, first the upper cup 132 of the upper cover member 130 is lowered to the position shown in Figure 5, the upper portion of the lower cover member 120 is closed by the upper cup 132. In addition, the sealed space S provided by the upper cover member 130 and the lower cover member 120 is reduced to below atmospheric pressure by the pressure reducing member 180. When the airtight space S is decompressed below atmospheric pressure, the substrate W is dried by the drying gas injected through the nozzle 142 of the first nozzle member 140.

When the dry gas is supplied to the center portion of the nozzle 142 through the first gas supply pipe 151, as shown in FIG. 6, the dry gas flows around the center portion along the flow path 143 formed therein to the peripheral portion. Move. At this time, the dry gas is sprayed on the substrate through the gas injection holes 144 connected thereto while moving along the flow path 143.

In this way, the dry gas is first injected into the center portion on the substrate, and then sequentially to the peripheral portion on the substrate, so that the dry gas is outward from the center portion of the substrate due to the flow rate difference between the center portion and the peripheral portion of the substrate and the rotating substrate. As a result, it is possible to effectively solve the problem of drying defects occurring in the center of the substrate.

Then, since the dry gas is supplied to the center of the nozzle 142 and then moves from the center to the periphery along the flow path, hydraulic loss of the dry gas may occur when the dry gas reaches the periphery of the nozzle 142. To compensate for this, as shown in FIG. 7, the secondary gas is additionally supplied to the nozzle 142 through the second gas supply pipe 152 connected to the periphery of the upper part of the nozzle 142, which is controlled by the controller 155. Is controlled by controlling the opening and closing operation of the valve 154 disposed on the second gas supply pipe 152.

The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

As described above, according to the present invention, it is possible to eliminate the drying failure occurring at the center of the substrate.

Moreover, according to this invention, the drying efficiency of a board | substrate can be increased.

Claims (7)

A substrate support member on which the substrate is placed and rotatable; A gas injection member injecting a dry gas onto a substrate placed on the substrate support member, and having a flow path formed therein so that the dry gas supplied to the center portion moves around the center portion and moves to the periphery portion; A first gas supply member supplying a dry gas to a central portion of the gas injection member; A second gas supply member supplying a dry gas to a peripheral portion of the gas injection member; Substrate processing apparatus comprising a. The method of claim 1, And said flow path is formed spirally. delete The method according to claim 1 or 2, The device, And a controller configured to control an operation of the first and second gas supply members so as to sequentially supply dry gas to a central portion and a peripheral portion of the gas injection member. In the method of drying a substrate by supplying a dry gas on the substrate, Dry gas, which flows along the flow path through the injection holes of the gas injection member connected to the flow path, while allowing the dry gas supplied to the center of the gas injection member to move around the center along the flow path formed therein. Spray onto the substrate to dry the substrate, And in order to compensate for the hydraulic loss of the dry gas moving to the periphery of the gas injection member along the flow path, dry gas is supplied to the center and the periphery of the gas injection member, respectively. The method of claim 5, And the dry gas is supplied to a central portion of the gas injection member and then supplied to a peripheral portion of the gas injection member. The method of claim 6, And the drying gas is supplied onto a rotating substrate.

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