KR100831835B1 - Growth method of gallium nitride layer for manufacturing high light extraction light emitting diode, manufacturing method of light emitting diode using this method, and light emitting diode manufactured by this method - Google Patents

Abstract

The present invention discloses a method of growing a gallium nitride layer for producing a high light extraction light emitting diode, a method of manufacturing a light emitting diode using the method, and a light emitting diode produced by the method. According to the gallium nitride layer growth method according to the present invention, a gallium nitride thin film is formed on a substrate, and an insulating film pattern defining a hexagonal opening pattern for exposing the upper surface of the gallium nitride thin film in a hexagon is formed, and the opposite dots of the hexagon are formed. The insulating film pattern is formed such that the direction of the connecting line forms an angle of 30 degrees with the natural preferred crystal growth direction of gallium nitride, and a gallium nitride layer of 20 to 70 μm is formed on the gallium nitride thin film exposed in a hexagon using the insulating film pattern as a mask. Selective growth in thickness is characterized in that the horizontal cross-section of the gallium nitride layer is 12 square.

According to the present invention, the number of crystal planes appearing on the sidewall of the gallium nitride layer can be maximized, so that the light extraction efficiency of the light emitting diode can be increased, and the manufacturing process of the light emitting diode can be reduced since the manufacturing process is simpler than the prior art. .

Description

A method of growing a gallium nitride layer for manufacturing a high light extraction light emitting diode, a method of manufacturing a light emitting diode using the method, and a light emitting diode manufactured by the method characteristics, Method of manufacturing Light Emitting Diode using the same, and Light Emitting Diode device

The following drawings attached to this specification are illustrative of preferred embodiments of the present invention, and together with the detailed description of the invention to serve to further understand the technical spirit of the present invention, the present invention is a matter described in such drawings It should not be construed as limited to.

1 to 3 are cross-sectional views sequentially illustrating a method of growing a gallium nitride layer for manufacturing a high light extraction LED according to an embodiment of the present invention.

4 is a cross-sectional view illustrating a method of growing a gallium nitride layer for manufacturing a high light extraction light emitting diode according to another embodiment of the present invention.

5 to 7 are process cross-sectional views sequentially illustrating a method of manufacturing a high light extraction LED according to an embodiment of the present invention.

8 is a cross-sectional view illustrating a method of manufacturing a high light extraction LED according to another embodiment of the present invention.

FIG. 9 is a plan view (right) and a partial enlarged view (left) of the top of the sapphire substrate after forming an insulating film pattern defining a hexagonal opening pattern on the sapphire substrate.

FIG. 10 is a photograph actually showing how gallium nitride crystals rotate in the natural preferred growth direction of gallium nitride crystals when the gallium nitride layer is grown to a predetermined critical thickness in accordance with the present invention.

11 and 12 are actual photographs showing the vertical cross section when the gallium nitride layer is grown to a critical thickness.

FIG. 13 is a table showing the results of measuring the horizontal cross-sectional shape of the gallium nitride layer according to the growth thickness of the gallium nitride layer, the length of the straight lines connecting the peaks of the polygons present on the top surface, and the surface area of the top surface.

FIG. 14 is photographs taken when the gallium nitride layer is grown to the growth thickness shown in the table of FIG. 13.

<Main reference number in drawing>

10 .... sapphire substrate 20 .... gallium nitride thin film

30 .... insulating film pattern 40 .... hexagonal opening pattern

50 .... Gallium Nitride Layer 80 .... LED Structure

80a .... n-type semiconductor layer 80b .... quantum well layer

80c .... p-type semiconductor layer 110 .... n-metal electrode

120 .... p-metal electrode

The present invention relates to a method of growing a gallium nitride layer that can increase the light extraction efficiency when manufacturing a light emitting diode using gallium nitride, more specifically, it is emitted to the outside when manufacturing a light emitting diode using the natural preferred growth characteristics of gallium nitride crystals A method of growing a gallium nitride layer capable of increasing light quantity, a method of manufacturing a high light extraction light emitting diode using the method, and a light emitting diode manufactured by the method.

In general, since nitride semiconductors have a very wide energy band gap, they are widely applied to optical devices from the visible to the ultraviolet region. In particular, gallium nitride, one of the nitride semiconductors, is widely used in the manufacture of blue light emitting diodes among the red, green, and blue light emitting diodes, which are the core elements of the electronic display board, and is one of the representative nitride semiconductors that has been in the spotlight with the appearance of a large color outdoor outdoor display board. .

Conventionally, zinc serenide (ZnSe), silicon carbide (SiC), and the like have been mainly used as semiconductor materials for light emitting devices emitting blue light. However, after the development of the blue light emitting device using gallium nitride, the blue light emitting diode using gallium nitride is brighter, life time and internal quantum efficiency compared to the blue light emitting diode using zinc serenide or silicon carbide. Because of its excellent quantum efficiency, gallium nitride has a wide range of applications including not only blue light emitting diodes but also full color displays, indicators, advertising panels, traffic signal systems, and white bulbs.

The ultimate goal of the current semiconductor semiconductor industry is to improve the brightness of light emitting diodes using gallium nitride, thereby extending the use of gallium nitride to general lighting. To this end, research is being actively conducted in the industry to increase the quantum efficiency inside the quantum well layer or to improve the light extraction efficiency of the device.

As a method for improving the quantum efficiency of the quantum well layer, a method of forming a concave-convex structure on the surface of the quantum well layer has been proposed so far. There is a method of reducing the total reflection caused in the gallium nitride layer by forming a protruding pattern on the surface of, or improving the shape of the optical device itself or the packaging method of the optical device to improve the light extraction efficiency.

However, the above conventional technologies have technical limitations that require complicated manufacturing processes and require high precision.

The present invention has been made to solve the above-mentioned problems of the prior art, and provides a gallium nitride layer growth method capable of increasing the light extraction area by growing a gallium nitride layer using the natural preference growth characteristics of gallium nitride crystals. The purpose is.

Another object of the present invention is to provide a high light extraction gallium nitride light emitting diode using the gallium nitride layer growth method and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a method of growing a gallium nitride layer for manufacturing a high light extraction light emitting diode, the method including: (a) forming a gallium nitride thin film on a substrate; (b) forming an insulating film pattern defining a hexagonal opening pattern exposing the upper surface of the gallium nitride thin film in a hexagon, wherein a direction connecting the hexagonal opposite peaks is in the direction of the natural preference crystal growth direction of gallium nitride; Forming the insulating film pattern to form an angle of FIG. And (c) selectively growing a gallium nitride layer to a thickness of 20 to 70 μm on the gallium nitride thin film exposed in a hexagon using the insulating film pattern as a mask so that the horizontal cross section of the gallium nitride layer becomes a octagonal shape. do.

In the present invention, the gallium nitride layer does not use an insulating film pattern as a mask, and after the gallium nitride thin film is patterned into a shape corresponding to the hexagonal opening pattern, the gallium nitride layer is directly grown on the hexagonal pattern made of gallium nitride. It may be.

After the gallium nitride layer is grown according to the present invention, by forming an LED structure including at least an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer on the substrate, by forming a metal electrode on each semiconductor layer A high light extraction light emitting diode can be manufactured. In this case, when a predetermined semiconductor type (p or n type) is given during growth of the gallium nitride layer, a semiconductor layer having the same type as the gallium nitride layer may not be formed when the LED structure is formed, and the metal electrode is gallium nitride. It is formed on the upper surface of the layer and the semiconductor layer included in the LED structure, respectively.

According to an aspect of the present invention, there is provided a high light extraction light emitting diode comprising: a gallium nitride layer pattern having a horizontal cross section of a gallium nitride layer as an island type gallium nitride layer pattern having a thickness of 20 to 70 μm; An LED structure formed on the gallium nitride layer pattern to include at least an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer; And n-metal electrodes and p-metal electrodes formed on the n-type and p-type semiconductor layers of the LED structure, respectively.

Alternatively, when the gallium nitride layer pattern has a first semiconductor type, the semiconductor layer having the same type as the gallium nitride layer pattern in the LED structure is omitted, and the metal electrode is the upper surface of the gallium nitride layer pattern And a semiconductor layer included in the LED structure, respectively.

Preferably, the substrate is a sapphire substrate. Alternatively, the substrate may be a (111) -Si substrate, a SiC substrate or a ZnO substrate which is known to form gallium nitride having a hexagonal crystal system.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to the common or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiments of the present invention and do not represent all of the technical idea of the present invention, various equivalents that may be substituted for them at the time of the present application It should be understood that there may be water and variations.

In the method of growing a gallium nitride layer according to the present invention, as shown in FIG. 1, the gallium nitride thin film 20 on the sapphire substrate 10 using a MOCVD (Metal Organic Chemical Vapor Deposition) method may be formed in a range of 1 to 4 μm. Form to thickness.

Then, as shown in FIG. 2, an insulating film pattern 30 defining a hexagonal opening pattern 40 is formed to expose the top surface of the gallium nitride thin film 20 in a hexagon. Preferably, the insulating film pattern 30 is formed of a silicon oxide film. To this end, a silicon oxide film is deposited to a thickness of 3000 to 3500 A, and then a photolithography process is applied to form a hexagonal opening pattern 40 exposing the upper surface of the gallium nitride thin film 20 in a hexagon.

9 is a top plan view of the sapphire substrate 10 on which the hexagonal opening patterns 40 are formed. Referring to the drawings, the hexagonal opening pattern 40 has a <11-20> direction of the sapphire substrate 10 and a <1-100> direction of the gallium nitride thin film 20 in the direction of the line connecting the sharp points AB. Form to match the direction. At this time, the width (W) of the hexagonal opening pattern 40 is 350 to 450um, the spacing (D) of the hexagonal opening pattern 40 is 100 ~ 200um.

After forming the hexagonal opening pattern 40 as described above, gallium nitride on the gallium nitride thin film 20 exposed by the hexagonal opening pattern 40 using the insulating film pattern 30 as a mask as shown in FIG. The layer 50 is selectively grown. At this time, the gallium nitride layer 50 is preferably formed to a thickness of 20 ~ 70um by using the HVPE (Hydride Vapor Phase Epitaxy) method. The reason is described later.

In the growth of the gallium nitride layer 50 by HVPE method, Ga (s), HCl (g) and NH ₃ (g) are used as the reaction source, and N ₂ (g) and H ₂ (g) are used as the atmosphere composition. Use it as a gas. However, the present invention is not limited thereto. Therefore, various reaction sources and atmosphere composition gases known in the art may be used. In some cases, Si-precursor gas such as silane (SiH ₄ ) or dichlorosilane (SiH ₂ Cl ₂ ) may be added as a reaction source to make the gallium nitride layer 50 an n-type semiconductor.

The following chemical formula is a chemical reaction when the gallium nitride layer 50 is grown.

[Scheme]

Ga (s) + HCl (g) → GaCl (g) + 1 / 2H ₂

GaCl (g) + NH ₃ (g) → GaN (s) + HCl (g) + 2H ₂

GaN (s) generated by the above scheme is deposited epitaxially on the gallium nitride thin film 20 exposed by the hexagonal opening pattern 40. At this time, the direction of the line connecting the sharp point AB of the hexagonal opening pattern 40 is the <11-20> direction of the sapphire substrate 10 and the <1-100> of the gallium nitride thin film 20 as described above. Coincides with the direction.

However, the natural preference direction in the growth of gallium nitride is shown in the [1000] direction as shown in FIG. This fact is apparent to those of ordinary skill in the art. Therefore, the hexagonal opening pattern 40 formed according to the present invention is in a state of being rotated 30 degrees with the natural preferred growth direction of the gallium nitride crystal. Accordingly, as the thickness of the gallium nitride layer 50 formed in the hexagonal opening pattern 40 increases, the crystal surface exposed to the sidewall of the gallium nitride layer 50 gradually rotates to change its direction in the original natural preferred growth direction. do.

Therefore, at the beginning of the growth of the gallium nitride layer 50, only {11-22} planes appear on the sidewalls of the gallium nitride layer 50, and when the thickness reaches a predetermined critical thickness, the {1-101} planes are formed on the sidewalls of the gallium nitride layer 50. And {1-102} and {11-22} appear simultaneously. This is because the hexagonal vertex in the <1-100> direction changes to the {1-102} plane and the {11-22} plane. According to the actual experiment, the gallium nitride layer 50 appears simultaneously on the sidewalls at {11-22} planes, {1-101} planes and {1-102} planes at a thickness of 20 to 70 um (hereinafter referred to as critical thickness). . When the {1-101} plane, the {1-102} plane, and the {11-22} plane appear at the same time, a total of 18 crystal planes exist on the sidewall of the gallium nitride layer 50 as shown in FIG. 10.

Specifically, as shown in FIG. 11, in the [1-100] direction, six crystal planes appear at the top and the bottom of the boundary line C-C ′, respectively, and as shown in FIG. 12, as shown in FIG. In the case of 20], six crystal planes appear in one plane without separating the upper and lower parts. Therefore, the other end surface (hereinafter, referred to as a horizontal cross section) perpendicular to the gallium nitride layer 50 in the direction of [0001] always forms a 12-corner.

As described above, the gallium nitride layer 50 is grown to a thickness of 20 to 70 um so that the {1-101} plane, the {1-102} plane, and the {11-22} plane are simultaneously present. If the light emitting diode is manufactured using 50), the light extraction area can be maximized, thereby improving the light extraction efficiency.

On the other hand, when the gallium nitride layer 50 is grown above the critical thickness, the crystal growth direction of the gallium nitride layer 50 is completely rotated in the natural preferred growth direction so that the {11-22} plane that existed at the beginning of growth changes to the vertex of the hexagon. Only the {1-101} plane and the {1-102} plane exist on the sidewall of the gallium nitride layer 50. Therefore, the horizontal cross section of the gallium nitride layer 50 changes to a hexagon and only 12 crystal planes exist on the sidewall.

FIG. 13 shows the horizontal cross-sectional shape of the gallium nitride layer 50 according to the growth thickness of the gallium nitride layer 50, the length of the straight lines connecting the peaks facing each other of the polygons present on the top surface (peak connection distance), and the top surface. Figure 14 is a table showing the results of measuring the surface area, Figure 14 is a photograph of the actual state when the gallium nitride layer 50 is grown to the growth thickness shown in the table of FIG.

13 and 14, when the gallium nitride layer 50 is grown to a critical thickness of 20 to 70 μm, the horizontal cross-sectional shape of the gallium nitride layer 50 is octagonal, and in the thickness range other than that, the gallium nitride layer It can be seen that the horizontal cross-sectional shape of 50 is hexagonal. In addition, it can be seen that the cusp connection distance of the gallium nitride layer 50 and the surface area of the top surface decrease as the growth thickness of the gallium nitride layer 50 increases. The optimum growth thickness of the gallium nitride layer 50 on the premise that the horizontal cross-sectional shape of the gallium nitride layer 50 is octagonal is determined by the electrode formed on the upper surface of the gallium nitride layer 50 in the LED manufacturing process described later. It depends on the size. That is, the gallium nitride layer 50 determines the specific growth thickness so that the surface area of the top surface corresponds to the electrode size.

As described above, the present invention is nitrided by growing the gallium nitride layer 50 in a thickness range of 20 to 70um while rotating the direction of the hexagonal opening pattern 40 by 30 degrees with respect to the natural preferred growth direction of gallium nitride crystals. The horizontal cross-sectional shape of the gallium layer 50 is set to be 12 squares. Then, the number of crystal surfaces present on the sidewall of the gallium nitride layer 50 may be increased from six to eighteen. When the gallium nitride light emitting diode is manufactured using the gallium nitride layer 50 having the maximum number of crystal planes of the sidewalls, light extraction efficiency may be improved.

Meanwhile, in the above-described embodiment, the gallium nitride layer 50 is selectively grown on the hexagonal opening pattern 40 using the insulating film pattern 30 as a mask. However, alternative embodiments are also possible. That is, as shown in FIG. 4, without forming an insulating film pattern defining a hexagonal opening pattern, a hexagon made of gallium nitride by directly patterning the gallium nitride thin film 20 formed on the sapphire substrate 10 by a photolithography process. The pattern 20 'is formed. At this time, the direction of the hexagonal pattern 20 'is the same as the hexagonal opening pattern 40 shown in FIG. Therefore, the lines connecting the opposite points of the hexagonal pattern 20 'are the same as the <11-20> direction of the sapphire substrate 10 and the <1-100> direction of the gallium nitride thin film 20. Then, by selectively depositing the gallium nitride layer 50 on the upper surface of the hexagonal pattern 20 'by the HVPE method to a critical thickness, the gallium nitride layer 50 having 18 crystal planes on the sidewalls as in the above-described embodiment ) Can be formed.

Next, a process of fabricating a light emitting diode using the grown gallium nitride layer 50 after growing the gallium nitride layer 50 having 18 crystal planes on the sidewalls and having a horizontal cross-sectional shape of a octagonal shape is described in detail. Let's explain. However, the type of material film constituting the light emitting diode such as a semiconductor material film, a buffer material film, and a metal electrode film, and techniques for depositing and patterning each material film are well known and will be described briefly.

First, as shown in FIG. 5, the gallium nitride layer 50 is grown using the hexagonal opening pattern 40, and then the LED structure 80 is formed on the entire surface of the sapphire substrate 10. The LED structure 70 includes at least an n-type semiconductor layer (n-GaN), a quantum well layer and a P-type semiconductor layer (p-GaN) which are basic components of a light emitting diode. These material films can be formed using the MOCVD method.

Then, as shown in FIG. 6, an opening 100 exposing the n-type semiconductor layer 80a in the LED structure 70 is formed using a photolithography process, and then the n-metal electrode 110 in the opening 100. ), And the p-metal electrode 120 is formed on the p-type semiconductor layer 80c of the LED structure 70.

Then, as illustrated in FIG. 7, the cutting process is performed along the cutting line DD ′ and the n-metal electrode 110 and the p-metal electrode formed on each light emitting diode unit separated from the sapphire substrate 10. When the wire is connected to 120, the manufacturing of the light emitting diode is completed.

In the present invention, when the gallium nitride layer 50 is formed, a hexagonal pattern made of gallium nitride by directly patterning a gallium nitride thin film formed on the sapphire substrate 10 without using the insulating film pattern 30 as a mask (FIG. 4). 20 ') of the gallium nitride layer 50 may be selectively grown only on the hexagonal pattern (see 50 of FIG. 4). When the gallium nitride layer 50 is formed in this way, as shown in FIG. 8, forming the LED structure 80 on the front surface of the sapphire substrate 10 on which the gallium nitride layer 50 is formed, the n-type semiconductor Forming an n-metal electrode 110 in the layer, forming a p-metal electrode 120 in the p-type semiconductor layer, and performing a cutting process along the DD ′ line, and performing n and p-metal electrodes 110 and 120. The step of connecting the wires may proceed substantially the same as described above.

The light emitting diode manufactured through the above process is light extraction efficiency because light generated in the quantum well layer is emitted to the outside through the side wall of the gallium nitride layer 50 having 18 crystal planes and the bottom of the gallium nitride layer 50. Can improve. Therefore, it is possible to manufacture a high light extraction light emitting diode having high brightness.

Although not shown in the drawings, when the gallium nitride layer 50 is formed in an n-type, deposition of the n-type semiconductor layer 80a may be omitted when the LED structure 80 is formed. In this case, the n-metal electrode 110 may be formed directly on the upper surface of the gallium nitride layer 50.

In the above-described embodiment, the gallium nitride layer 50 was formed on the sapphire substrate 10. However, the gallium nitride layer 50 may be deposited on other substrates known to grow hexagonal crystals. Examples of such substrates include (111) -Si substrates, SiC substrates, ZnO substrates, and the like. When the gallium nitride layer 50 is formed on the substrate, when the hexagonal opening pattern or the hexagonal pattern made of gallium nitride is formed, the direction of the line connecting the opposite peaks of the hexagon is determined by the direction of the natural preference crystal growth of the gallium nitride layer. It is obvious that it should be formed by rotating 30 degrees.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

According to the present invention, gallium nitride is grown to a predetermined thickness in a direction different from the naturally preferred growth direction of gallium nitride crystals to cause the crystal to rotate in the growth process of the gallium nitride layer, thereby reducing the crystal plane appearing on the sidewall of the gallium nitride layer. Increase from 18 to dogs.

Therefore, manufacturing a light emitting diode using the gallium nitride layer grown according to the present invention can not only improve the light extraction efficiency, but also the manufacturing process for improving the light extraction efficiency is simpler than that of the prior art. Can reduce the cost.

Claims (21)

(a) forming a gallium nitride thin film on the substrate; (b) forming an insulating film pattern defining a hexagonal opening pattern for exposing the upper surface of the gallium nitride thin film in a hexagon, wherein a direction connecting lines of opposite hexagonal points is in the [1000] direction and 30 degrees of gallium nitride; Forming the insulating film pattern to form an angle; And (c) selectively growing a gallium nitride layer to a thickness of 20 to 70 um on the gallium nitride thin film exposed in a hexagon by using the insulating film pattern as a mask so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape; Gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that. The method of claim 1, The gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that there are 18 crystal planes on the side wall of the gallium nitride layer grown in the step (c). According to claim 1, wherein step (b), Forming a silicon oxide film on the substrate; And Patterning the silicon oxide film by a photolithography process to form the hexagonal opening pattern exposing the upper surface of the gallium nitride thin film. The method of claim 1, The hexagonal opening pattern is a gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that the continuous pattern along the <1-100> direction of the gallium nitride thin film. The method of claim 1, wherein in step (c), The gallium nitride layer is gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that the growth of a thickness of 2 ~ 100um by HVPE (Hydride Vapor Phase Epitaxy) method. The method of claim 5, wherein the HVPE method for growing gallium nitride layer, Ga (s), HCl (g) and NH ₃ (g) as a reaction source, a mixed gas of N ₂ (g) and H ₂ (g) as an atmosphere composition gas for manufacturing a light emitting diode Gallium nitride layer growth method. The method of claim 1, The substrate is a sapphire substrate, (111) -Si substrate, SiC substrate or ZnO substrate, characterized in that the gallium nitride layer growth method for manufacturing a light emitting diode. (a) forming a gallium nitride thin film on the substrate; (b) patterning the gallium nitride thin film in a hexagonal pattern by a photolithography process, wherein the hexagonal pattern is patterned such that a direction connecting lines of opposite hexagons to each other forms an angle of 30 degrees with the [1000] direction of gallium nitride; step; And (c) selectively growing a gallium nitride layer only to a thickness of 20 to 70 um on the hexagonal pattern so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape; nitride for manufacturing a light emitting diode comprising a Gallium layer growth method. The method of claim 8, The gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that there are 18 crystal planes on the side wall of the gallium nitride layer grown in the step (c). The method of claim 8, The hexagonal thin film pattern is a gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that the continuous pattern in the <1-100> direction of the gallium nitride thin film. The method of claim 8, wherein in step (c), The gallium nitride layer is a gallium nitride layer growth method for manufacturing a light emitting diode, characterized in that the growth by a thickness of 2 ~ 100um by HVPE method. The method of claim 11, wherein the HVPE method for growing gallium nitride layer, Ga (s), HCl (g) and NH ₃ (g) as a reaction source, a mixed gas of N ₂ (g) and H ₂ (g) as an atmosphere composition gas for manufacturing a light emitting diode Gallium nitride layer growth method. The method of claim 8, The substrate is a sapphire substrate, (111) -Si substrate, SiC substrate or ZnO substrate, characterized in that the gallium nitride layer growth method for manufacturing a light emitting diode. (a) forming a gallium nitride thin film on the substrate; (b) forming an insulating film pattern defining a hexagonal opening pattern for exposing the upper surface of the gallium nitride thin film in a hexagon, wherein a direction connecting lines of opposite hexagonal points is in the [1000] direction and 30 degrees of gallium nitride; Forming the insulating film pattern to form an angle; (c) selectively growing a gallium nitride layer to a thickness of 20 to 70 um on the gallium nitride thin film exposed in a hexagon using the insulating film pattern as a mask so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape; (d) forming an LED structure on the gallium nitride layer, the LED structure comprising at least an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer; And (e) forming an opening exposing the n-type semiconductor layer of the LED structure to form an n-metal electrode and forming a metal electrode on the p-semiconductor layer of the LED structure; Diode manufacturing method. (a) forming a gallium nitride thin film on the substrate; (b) patterning the gallium nitride thin film in a hexagonal pattern by a photolithography process, wherein the hexagonal pattern is patterned such that a direction connecting lines of opposite hexagons to each other forms an angle of 30 degrees with the [1000] direction of gallium nitride; step; (c) selectively growing a gallium nitride layer only on the hexagonal pattern with a thickness of 20 to 70 um so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape; (d) forming an LED structure on the gallium nitride layer, the LED structure comprising at least an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer; And (e) forming an opening exposing the n-type semiconductor layer of the LED structure to form an n-metal electrode and forming a metal electrode on the p-semiconductor layer of the LED structure; Diode manufacturing method. (a) forming a gallium nitride thin film on the substrate; (b) forming an insulating film pattern defining a hexagonal opening pattern for exposing the upper surface of the gallium nitride thin film in a hexagon, wherein a direction connecting lines of opposite hexagonal points is in the [1000] direction and 30 degrees of gallium nitride; Forming the insulating film pattern to form an angle; (c) The gallium nitride layer of the first semiconductor type is selectively grown to a thickness of 20 to 70 um on the gallium nitride thin film exposed in a hexagon using the insulating film pattern as a mask so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape. Making; (d) forming an LED structure on the gallium nitride layer comprising at least a quantum well layer and a semiconductor layer having a second semiconductor type of opposite polarity to the first semiconductor type; And (e) forming an opening exposing the top surface of the gallium nitride layer to form a metal electrode, and forming a metal electrode on a semiconductor layer of a second semiconductor type included in the LED structure; Method of manufacturing light emitting diodes. (a) forming a gallium nitride thin film on the substrate; (b) patterning the gallium nitride thin film in a hexagonal pattern by a photolithography process, wherein the hexagonal pattern is patterned such that a direction connecting lines of opposite hexagons to each other forms an angle of 30 degrees with the [1000] direction of gallium nitride; step; (c) selectively growing a gallium nitride layer of a first semiconductor type to a thickness of 20 to 70 um only on the hexagonal pattern so that the horizontal cross-sectional shape of the gallium nitride layer becomes a octagonal shape; (d) forming an LED structure on the gallium nitride layer comprising at least a quantum well layer and a semiconductor layer of a second semiconductor type having a polarity opposite to the first semiconductor type; And (e) forming an opening exposing the top surface of the gallium nitride layer to form a metal electrode, and forming a metal electrode in a semiconductor layer having a second semiconductor type of LED structure; Diode manufacturing method. The method according to any one of claims 14 to 17, Method of manufacturing a light emitting diode, characterized in that there are 18 crystal planes on the side wall of the gallium nitride layer grown in the step (c). The method according to any one of claims 14 to 17, The substrate is a light emitting diode manufacturing method, characterized in that the sapphire substrate, (111) -Si substrate, SiC substrate or ZnO substrate. An island-type gallium nitride layer pattern having a thickness of 20 to 70 μm, the horizontal gallium nitride layer pattern having a horizontal cross-sectional shape; An LED structure formed on the gallium nitride layer pattern to include at least an n-type semiconductor layer, a quantum well layer and a p-type semiconductor layer; And And n-metal electrodes and p-metal electrodes formed on the n-type and p-type semiconductor layers of the LED structure, respectively. An island-type gallium nitride layer pattern having a thickness of 20 to 70 um, the first semiconductor type gallium nitride layer pattern having a horizontal cross-sectional shape of a octagon; An LED structure formed on the gallium nitride layer pattern to include at least a quantum well layer and a semiconductor layer of a second semiconductor type that is opposite to the first semiconductor type; And And metal electrodes respectively formed on an upper surface of the gallium nitride layer pattern and a semiconductor layer of a second semiconductor type of the LED structure.

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