KR100878410B1 - 수정 진동자 제조방법 - Google Patents
수정 진동자 제조방법 Download PDFInfo
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- KR100878410B1 KR100878410B1 KR1020070069563A KR20070069563A KR100878410B1 KR 100878410 B1 KR100878410 B1 KR 100878410B1 KR 1020070069563 A KR1020070069563 A KR 1020070069563A KR 20070069563 A KR20070069563 A KR 20070069563A KR 100878410 B1 KR100878410 B1 KR 100878410B1
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- wafer
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- crystal oscillator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49005—Acoustic transducer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49007—Indicating transducer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/4908—Acoustic transducer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
바람직하게, 상기 캡 웨이퍼의 상부면을 연마하여 박형화하는 단계는 상기 캐비티를 형성한 후에 수행된다
Claims (10)
- 상,하부단이 상,하부면으로 각각 노출되는 복수개의 내외부 연결단자를 구비하는 패키지 웨이퍼를 제공하는 단계 ;상기 내외부 연결단자의 상단에 높이규제부재를 형성하고, 상기 높이규제부재상에 여진전극이 구비된 수정편의 일단부를 접합하는 단계 ;상기 수정편이 탑재된 패키지 웨이퍼의 상부면에 하부로 개방된 캐비티를 구비하는 캡 웨이퍼의 하부면을 적층하여 양극접합하는 단계 ; 및상기 패키지 웨이퍼와 캡 웨이퍼가 서로 접합되는 접합부위를 따라 절단하여 복수개의 수정진동자를 개별적으로 분리하는 단계 ; 를 포함하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 패키지 웨이퍼를 제공하는 단계는, 상기 패키지 웨이퍼의 하부면에 제1 패턴마스크를 형성한 다음 상기 패키지 웨이퍼의 하부면을 식각하여 상단이 밀폐된 블라인드 비아홀을 형성하는 단계, 상기 블라인드 비아홀을 에워싸는 제2 패턴마스크를 형성한 다음 상기 블라인드 비아홀 및 패키지 웨이퍼의 하부면에 도전성 금속막을 코팅하는 단계 및 상기 웨이퍼 패키지의 상부면을 연마하여 상기 블라인드 비아홀의 상부단을 상부로 외부노출시키는 단계를 포함함을 특징으로 하는 수정진동자 제조방법.
- 제2항에 있어서, 상기 도전성 금속막을 코팅하는 단계는 상기 블라인드 바아홀의 내부공간에 도전성 충진제를 충진하는 단계를 추가 포함함을 특징으로 하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 높이규제부재는 상기 패키지 웨이퍼의 상부면에 상기 내외부 연결단자의 상단을 외부노출시키는 제3 패턴마스크를 형성하고 이를 노광시켜 도금패턴을 형성한 다음, 상기 도금패턴상에 일정두께로 구비되는 제1금속막과, 상기 제1금속막의 상부면에 일정두께로 구비되는 제2금속막으로 이루어짐을 특징으로 하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 높이규제부재의 상단에 상기 수정편의 일단을 접합하는 단계는 상기 높이규제부재의 상단에 도전성 페이스트를 도포하는 단계를 추가 포함함을 특징으로 하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 높이규제부재와 수정편은 초음파 방식에 의해서 서로 접합됨을 특징으로 하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 패키지 웨이퍼에 접합된 수정편은 상부면에 형성된 여진전극을 건식식각에 의해서 일부 제거하면서 상기 수정편의 주파수를 조정함을 특징으로 하는 수정진동자 제조방법.
- 제1항에 있어서, 상기 수정진동자의 전체 두께를 줄여 박형화하기 위해 상기 캡 웨이퍼의 상부면을 연마하여 박형화하는 단계를 더 포함하는 것을 특징으로 하는 수정진동자 제조방법.
- 제8항에 있어서, 상기 캡 웨이퍼의 상부면을 연마하여 박형화하는 단계는 상기 캐비티를 형성한 후에 수행됨을 특징으로 하는 수정진동자 제조방법.
- 제8항에 있어서, 상기 캡 웨이퍼의 상부면을 연마하여 박형화하는 단계는 상기 패키지 웨이퍼와 캡 웨이퍼가 접합된 상태에서 수행됨을 특징으로 하는 수정진동자 제조방법.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070069563A KR100878410B1 (ko) | 2007-07-11 | 2007-07-11 | 수정 진동자 제조방법 |
| DE102008032233A DE102008032233A1 (de) | 2007-07-11 | 2008-07-09 | Verfahren zur Herstellung einer Kristallvorrichtung |
| JP2008178856A JP4930924B2 (ja) | 2007-07-11 | 2008-07-09 | 水晶振動子の製造方法 |
| US12/171,106 US7845064B2 (en) | 2007-07-11 | 2008-07-10 | Method for manufacturing crystal device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070069563A KR100878410B1 (ko) | 2007-07-11 | 2007-07-11 | 수정 진동자 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100878410B1 true KR100878410B1 (ko) | 2009-01-13 |
Family
ID=40176099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070069563A Expired - Fee Related KR100878410B1 (ko) | 2007-07-11 | 2007-07-11 | 수정 진동자 제조방법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7845064B2 (ko) |
| JP (1) | JP4930924B2 (ko) |
| KR (1) | KR100878410B1 (ko) |
| DE (1) | DE102008032233A1 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007212751A (ja) * | 2006-02-09 | 2007-08-23 | Nippon Dempa Kogyo Co Ltd | 球状又は半球状の結晶体の製造方法及び球状sawデバイスの製造方法 |
| KR101113251B1 (ko) * | 2009-08-28 | 2012-02-20 | (주)와이솔 | Smd형 소자의 lid 패키징 공법과 이를 위한 장치 |
| JP5479874B2 (ja) * | 2009-12-10 | 2014-04-23 | セイコーインスツル株式会社 | パッケージの製造方法及びパッケージ |
| JP5485714B2 (ja) * | 2010-01-07 | 2014-05-07 | セイコーインスツル株式会社 | パッケージの製造方法 |
| JP5129284B2 (ja) * | 2010-03-09 | 2013-01-30 | 日本電波工業株式会社 | 圧電振動子及び圧電振動子の製造方法 |
| JP2011193290A (ja) * | 2010-03-15 | 2011-09-29 | Seiko Instruments Inc | パッケージの製造方法、圧電振動子、発振器、電子機器および電波時計 |
| JP2011249424A (ja) * | 2010-05-24 | 2011-12-08 | Daishinku Corp | 電子部品パッケージの封止部材、電子部品パッケージ、及び電子部品パッケージの封止部材の製造方法 |
| CN102983826A (zh) * | 2012-12-04 | 2013-03-20 | 四川环州机电设备有限公司 | 一种石英晶体振荡器贴片及其生产工艺 |
| FR3009649B1 (fr) * | 2013-08-09 | 2016-12-23 | Commissariat Energie Atomique | Interconnexion de plusieurs niveaux d'un empilement de supports de composants electroniques |
| JP2015109633A (ja) * | 2013-10-22 | 2015-06-11 | 株式会社大真空 | 圧電振動素子と当該圧電振動素子を用いた圧電デバイスおよび、前記圧電振動素子の製造方法と当該圧電振動素子を用いた圧電デバイスの製造方法 |
| JP2020036063A (ja) | 2018-08-27 | 2020-03-05 | セイコーエプソン株式会社 | 振動デバイス、振動デバイスの製造方法、電子機器、および移動体 |
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| US7407826B2 (en) * | 2005-03-21 | 2008-08-05 | Honeywell International Inc. | Vacuum packaged single crystal silicon device |
| JP2007013608A (ja) * | 2005-06-30 | 2007-01-18 | Kyocera Kinseki Corp | 圧電振動子の製造方法及び圧電振動子 |
| KR101149561B1 (ko) | 2005-12-28 | 2012-05-29 | 주식회사 엘지실트론 | 실리콘 단결정 잉곳 성장장치용 시드 척 구조 |
-
2007
- 2007-07-11 KR KR1020070069563A patent/KR100878410B1/ko not_active Expired - Fee Related
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2008
- 2008-07-09 JP JP2008178856A patent/JP4930924B2/ja not_active Expired - Fee Related
- 2008-07-09 DE DE102008032233A patent/DE102008032233A1/de not_active Ceased
- 2008-07-10 US US12/171,106 patent/US7845064B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005244735A (ja) | 2004-02-27 | 2005-09-08 | Kyocera Kinseki Corp | 水晶振動子の製造方法、及びその水晶振動子 |
| JP2006339749A (ja) | 2005-05-31 | 2006-12-14 | Kyocera Kinseki Corp | 水晶振動子の製造方法、及びその水晶振動子 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090013519A1 (en) | 2009-01-15 |
| US7845064B2 (en) | 2010-12-07 |
| DE102008032233A1 (de) | 2009-02-05 |
| JP4930924B2 (ja) | 2012-05-16 |
| JP2009022003A (ja) | 2009-01-29 |
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