KR100872982B1 - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

Disclosed are a semiconductor device having a silicide film containing carbide and a method of manufacturing the same. The semiconductor device is disposed on a semiconductor substrate having an active region defined by an isolation layer, a gate electrode disposed on the semiconductor substrate, a source and drain region in which impurities are injected at both sides of the gate electrode among the active regions, and a source and drain region. And a silicide film containing carbide.

Description

Semiconductor device and manufacturing method therefor {SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME}

Embodiments relate to a semiconductor device and a method of manufacturing the same.

In recent years, with the development of technology of semiconductor devices, the performance of semiconductor devices has been rapidly improved. In particular, MOS-type semiconductor devices are becoming more miniaturized to improve the performance of semiconductor devices.

Therefore, the gate length of the gate electrode, that is, the channel width is reduced, and the junction depth of the source / drain impurity diffusion region is shallow. As a result, sheet resistances of the gate electrode and the source / drain are increased.

In order to reduce resistance of the gate electrode and the source / drain due to the miniaturization of the semiconductor device, a salicide (SAL) is formed on the gate electrode and the source / drain to prevent an increase in resistance of the gate electrode and the source / drain.

However, since salicide has low thermal stability, there is a problem that a defect may occur in a high temperature process.

The embodiment provides a semiconductor device and a method of manufacturing the same.

In an embodiment, a semiconductor device includes a semiconductor substrate in which an active region is defined by an isolation layer, a gate electrode disposed on the semiconductor substrate, a source and a drain region in which impurities are injected into both sides of the gate electrode, and the source of the active region. And a first silicide film disposed on the drain region and including carbide.

A method of manufacturing a semiconductor device according to an embodiment includes providing a semiconductor substrate having an active region defined by an isolation layer, implanting impurities into a predetermined region of the active region to form a source and a drain region, and the source and Forming a first silicide film comprising carbide on the drain region.

The semiconductor device according to the embodiment has a silicide film including carbide. The silicide film containing carbide improves thermal stability. Therefore, the defective rate which may occur in the manufacturing process of the semiconductor device is reduced.

A method of manufacturing a semiconductor device according to an embodiment includes depositing silicide metal and carbide together. The silicide film formed by the above method contains carbide, and the silicide film containing carbide has high thermal stability.

1 is a cross-sectional view of a semiconductor device according to an embodiment.

Referring to FIG. 1, a semiconductor device may include a semiconductor substrate 110, a device isolation layer 120, a gate insulating layer 130, a gate electrode 140, an LDD region 150, a gate spacer 160, a source and a drain region ( 170 and 190 and a silicide layer 180.

The semiconductor substrate 110 is, for example, a silicon wafer, and examples of materials that can be used as the semiconductor substrate 110 include single crystalline silicon and the like.

The device isolation layer 120 is formed inside the trench formed on the semiconductor substrate 110. An example of a material that may be used as the device isolation layer 120 is an oxide. The device isolation layer 120 insulates the semiconductor device, and an active region AR is formed by the device isolation layer 120.

The gate insulating layer 130 is disposed on the semiconductor substrate 110 and is disposed on the active region AR. Examples of the material that may be used as the gate insulating layer 130 include silicon oxide and the like.

The gate electrode 140 is a conductor and is disposed on the gate insulating layer 130. Examples of the material forming the gate electrode 140 may include polycrystalline silicon and the like.

The LDD region 150 is implanted with a low concentration of impurities, and examples of materials that can be used as the impurities include P-type impurities and N-type impurities. The LDD region 150 is formed to surround the gate electrode 140 when viewed in plan view.

The gate spacer 160 is disposed on the LDD region 150 and is formed to surround side surfaces of the gate electrode 140. Examples of a material that may be used as the gate spacer 160 may include nitride and the like, and insulate a side surface of the gate electrode 140.

The source and drain regions 170 and 190 are formed in a predetermined region of the active region AR. The source and drain regions 170 and 190 are formed in, for example, a region between the LDD region 150 and the device isolation layer 120. High concentrations of impurities are implanted into the source and drain regions 170 and 190, and examples of materials that may be used as the impurities include P-type impurities and N-type impurities. The source and drain regions 170 and 190 may include a source electrode and a drain electrode, and are formed deeper than the LDD region 150.

The silicide layer 180 may include carbide, and may include, for example, nickel (Ni), nickel carbide (Ni ₃ C), and nickel silicide (NiSi). The silicide layer 180 may include, for example, about 65% to 75% nickel carbide in a molar ratio.

The silicide layer 180 prevents an increase in resistance of the gate electrode 140 and the source and drain regions 170 and 190. In addition, since the silicide layer 180 includes carbide, thermal stability is improved.

The silicide layer 180 may include a first silicide layer 181 and a second silicide layer 182. The first silicide layer 181 is disposed on the source and drain regions 170 and 190, and the second silicide layer 182 is disposed on the gate electrode 140.

The semiconductor device may further include interconnections electrically connected to the silicide layer 180 on the silicide layer 180.

2A to 2E are cross-sectional views illustrating a process according to a method of manufacturing a semiconductor device of an embodiment.

Referring to FIG. 2A, a trench is formed on the semiconductor substrate 110, and an oxide is disposed inside the trench to form the device isolation layer 120. An active region AR is defined in the semiconductor substrate 110 by the device isolation layer 120.

After the device isolation layer 120 is formed, an insulating film is formed over the entire area of the active region AR of the semiconductor substrate 110. The insulating layer may be formed by oxidizing the semiconductor substrate 110. Examples of a material that may be used as the insulating layer may include an oxide and the like.

After the insulating film is formed, a polycrystalline silicon layer is formed on the insulating film, and a photoresist pattern is formed on the polysilicon layer. The polysilicon layer and the insulating layer are patterned by using the photoresist pattern as an etching mask, and a gate insulating layer 130 and a gate electrode 140 are formed on the active region AR.

Referring to FIG. 2B, after the gate electrode 140 is formed, a low concentration of impurities are implanted into a predetermined region of the active region AR using the gate electrode 140 as an ion implantation mask, and a preliminary LDD region. 150a is formed.

Referring to FIG. 2C, after the preliminary LDD region 150a is formed, a nitride film covering the gate electrode 140 is formed on the semiconductor substrate 110. Examples of the material that can be used as the nitride film include silicon nitride and the like. The nitride layer is etched back etched, and as a result, the gate spacer 160 is formed on the side surface of the gate electrode 140.

Referring to FIG. 2D, a high concentration of impurities are ion-implanted into a predetermined region of the active region AR using the gate electrode 140 and the gate spacer 160 as an ion implantation mask, so that the semiconductor substrate 110 has a source and a source. Drain regions 170 and 190 and LDD regions 150 are formed.

Referring to FIG. 2E, after the source and drain regions 170 and 190 are formed, the device isolation layer 120, the gate insulating layer 130, the gate electrode 140, the LDD region 150, and the gate are formed. A metal layer including carbide is formed on the semiconductor substrate 110 on which the spacer 160 and the source and drain regions 170 and 190 are formed.

In the embodiment, for example, a metal layer containing nickel and nickel carbide is formed by atomic layer deposition (ALD).

First, bisnickel precursor (bis Ni precursor) is introduced on the semiconductor substrate 110 as reactants.

The bisnickel precursor includes nickel and ligand binding elements for ligand binding to nickel. The bisnickel precursor includes, for example, carbon and hydrogen. More specifically, the bisnickel precursor includes, for example, a hydrocarbon. More specifically, the bisnickel precursor includes, for example, cyclopentadiene (C ₅ H ₅ ).

Subsequently, the reactants, that is, the bisnickel precursor is chemically adsorbed on the semiconductor substrate 110, and some of the bisnickel precursor is physically adsorbed.

The non-chemically adsorbed bisnickel precursor is removed by inert gases, and a layer including the bisnickel precursor is formed on the semiconductor substrate 110.

Thereafter, the ligand binding elements are removed by a ligand remover, and a metal layer including nickel and nickel carbide is formed on the semiconductor substrate 110. Examples of the material that can be used as the ligand remover include hydrogen, ammonia and silane gases (SiH ₄ , Si ₂ H ₆ ) and the like.

Here, the atomic layer deposition method may be performed at a pressure of about 0.3 to 10 Torr, for example, at a temperature of about 650 ° C. or less.

By repeating the method several times, a metal layer including the nickel and nickel carbide may be stacked in a plurality of layers.

After the metal layer is formed, the thin film is heat-treated at a temperature of about 250 ° C. to 650 ° C., and the nickel reacts with silicon included in the semiconductor substrate 110 to form nickel silicide (NiSi).

After the nickel silicide is formed, the thin film that does not react with silicon is removed, and the silicide layer 180 including carbide is formed.

The silicide layer 180 including carbide may improve thermal stability and prevent defects that may occur in subsequent processes.

1 is a cross-sectional view of a semiconductor device according to an embodiment.

2A to 2E are cross-sectional views illustrating a process according to a method of manufacturing a semiconductor device of an embodiment.

Claims (7)

A semiconductor substrate having an active region defined by an isolation layer; A gate electrode disposed on the semiconductor substrate; Source and drain regions in which impurities are implanted in both sides of the gate electrode of the active region; And And a first silicide layer on the source and drain regions, the first silicide layer including carbide. The semiconductor device of claim 1, further comprising a second silicide layer on the gate electrode and including carbide. The semiconductor device of claim 1, wherein the first silicide layer and the second silicide layer comprise nickel carbide in a molar ratio of 65% to 75%. Providing a semiconductor substrate having an active region defined by an isolation layer; Implanting impurities into predetermined regions of the active region to form source and drain regions; And Forming a first silicide film comprising carbide on the source and drain regions. The method of claim 4, wherein Forming a gate insulating film on the active region; Forming a gate electrode on the gate insulating film; And Forming a second silicide film including carbide on the gate electrode. The method of claim 4, wherein Forming the first silicide film Depositing a metal on the source and drain regions by atomic deposition; And And heat treating the semiconductor substrate with the deposited layer. The semiconductor of claim 6, wherein in the depositing of the metal, the metal is deposited by atomic layer deposition using a metal precursor including carbon, and heat-treated at a temperature of 250 ° C. to 600 ° C. in the heat treatment step. Method of manufacturing the device.

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