KR101080981B1 - Switching element and switching circuit responding to acceleration - Google Patents

Abstract

According to an aspect of the present invention, a switching device includes a substrate, a first electrode formed on the substrate, and a second electrode formed on the substrate, wherein the first electrode includes a fixed region, a movable region, and a seam region connected to each other. And the fixed area is fixed on the substrate, the movable area and the seam area are spaced apart from the substrate, and the movable area moves in response to the acceleration of the substrate to be in contact with the second electrode in an ON state. Or the seam region which is spaced apart from the second electrode to form an OFF state, and which connects the fixed area and the movable area to each other, has a first shape in the ON state and the OFF state, and in the intermediate state, And an elastic tilting means having a second shape by an external force generated by the movement of the movable region.

Description

Switching element and switching circuit responding to acceleration

The present invention relates to a switching element and a switching circuit. More particularly, the present invention relates to a microelectromechanical systems (MEMS) switching element that switches to an ON state when it moves above an acceleration threshold and a switching circuit using the switching element.

The switching element corresponding to the predetermined acceleration can be used for various purposes. For example, safety mounting devices (S & As) that allow bombs or missiles to be exploded at a specific point of time have acceleration-based switching elements to ensure that no explosion occurs before a minimum safety time. In order for the safety mounting apparatus to be further miniaturized and applied in a wider range, it is necessary to miniaturize the acceleration-responsive switching element.

In addition, in order to further ensure safety, it has been desired to provide a switching circuit with multiple operation error correction means so as not to be switched to the ON state below the acceleration threshold.

The technical problem to be solved by the present invention is to provide an acceleration-responsive switching device that maintains the OFF state below the acceleration threshold and a switching circuit using the switching device.

Another technical problem to be solved by the present invention is to provide an acceleration-responsive switching MEMS device that maintains an OFF state below the acceleration threshold so that the switching device and the switching circuit can be miniaturized, and a switching circuit using the switching device.

Another technical problem to be solved by the present invention is to provide a switching circuit having a plurality of switching elements to ensure stability so as not to transition to an ON state below the acceleration threshold value.

The technical problems of the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned will be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, a switching element includes a substrate, a first electrode formed on the substrate, and a second electrode formed on the substrate, wherein the first electrode is a fixed region connected to each other, A movable area and a seam area, wherein the fixed area is fixed on the substrate, the movable area and the seam area are spaced apart from the substrate, and the movable area moves in response to an acceleration of the substrate. The seam region which contacts the two electrodes to form an ON state or is spaced apart from the second electrode to form an OFF state, and connects the fixed area and the movable area to each other has a first shape in the ON state and the OFF state. And an elastic tilting means having a second shape by an external force generated by the movement of the movable region in an intermediate state. All.

A switching circuit according to another aspect of the present invention for achieving the above technical problem includes an RC circuit in which the switching element and one end is connected to the second electrode, the other end is connected to the ground terminal. However, note that the output terminal is connected between the resistor and the capacitor of the RC circuit.

According to another aspect of the present invention for achieving the above technical problem, the switching circuit according to any one of claims 1 to 6, the second switching device according to any one of claims 1 to 6. A first RC circuit having one end connected to the second electrode of the first switching element, the other end connected to the ground end, and a first output end connected between the first resistor and the first capacitor, and one end connected to the second electrode. A second RC circuit connected to the second electrode of the switching element, the other end connected to the ground end, and a second output end connected between the second resistor and the second capacitor; And an OFF state maintaining part connected to the first output terminal and having at least one first OFF state maintaining electrode protruding toward the movable area of the second switching element. However, the first electrode of the first switching element is directly connected to the first electrode of the second switching element, and the movable region of the second switching element is at least protruding toward the first OFF state maintaining electrode. Note that it further includes one second OFF state sustaining electrode.

According to still another aspect of the present invention, there is provided a method of operating the switching circuit, wherein an input voltage is applied to the first electrode of the first switching device, thereby providing the first switching device and the second switching device. The latching of the second switching element is released, and the OFF state of the second switching element is maintained by the constant power caused by the difference between the voltage applied to the second OFF state holding electrode of the second switching element and the voltage of the first OFF state holding electrode. The switching circuit moves at an acceleration equal to or greater than a threshold acceleration, the first switching element transitions to an ON state, and a gap between the second ON state holding electrode and the first ON state holding electrode of the first switching element. This decrease is caused by the electrostatic force caused by the voltage difference between the second ON state maintaining electrode and the first ON state maintaining electrode of the first switching element. The ON state of the first switching element is maintained, a first delay is achieved until the charging of the first capacitor is completed, and after the first delay, a first output voltage is applied to the first output terminal to turn off the second switching element. The holding is released, the first switching element transitions to the ON state, and the distance between the second ON state holding electrode and the first ON state holding electrode of the second switching element decreases, The ON state of the second switching element is maintained by the constant power caused by the voltage difference between the second ON state sustain electrode and the first ON state sustain electrode, and a second delay is achieved until the charging of the second capacitor is completed. Thereafter, the output voltage is applied to the second output terminal.

According to the present invention as described above, there is an effect that it is possible to provide a fine switching device that is in the ON state only when the movement with an acceleration of a predetermined acceleration threshold or more.

In addition, the probability that the voltage is applied to the final output terminal below the acceleration threshold by connecting the fine switching elements through a plurality of RC delay circuits and applying the voltage to the final output terminal only when the fine switching elements are all turned on. There is an effect that can be significantly lowered.

The effects according to the present invention are not limited by the contents exemplified above, and more various effects are included in the present specification.

1 is a conceptual diagram illustrating a manufacturing process of a switching device according to an exemplary embodiment of the present invention.
2A is a first plan view of a switching device in an OFF state according to an embodiment of the present invention.
2B is a first plan view of a switching device in an intermediate state according to an embodiment of the present invention.
2C is a first plan view of a switching device in an ON state according to an embodiment of the present invention.
3 is a second plan view of a switching device in an OFF state according to an embodiment of the present invention.
4 is a second plan view of a switching device in an intermediate state according to an embodiment of the present invention.
5 is a second plan view of a switching device in an ON state according to an embodiment of the present invention.
6 is a first enlarged view of a latch and an ON state maintaining unit of a switching circuit according to an exemplary embodiment of the present disclosure.
7 is a second enlarged view of a latch and an ON state maintaining unit of a switching circuit according to an exemplary embodiment of the present disclosure.
8 is a first enlarged view of a latch and an OFF state maintaining unit of a switching circuit according to an exemplary embodiment of the present disclosure.
9 is a second enlarged view of a latch and an OFF state maintaining unit of a switching circuit according to an exemplary embodiment of the present disclosure.
10 is a plan view of a switching circuit according to an embodiment of the present invention.

Advantages and features of the present invention, and methods for achieving them will be apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various forms. The embodiments of the present invention make the posting of the present invention complete and the general knowledge in the technical field to which the present invention belongs. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

References to elements or layers "on" other elements or layers include all instances where another layer or other element is directly over or in the middle of another element. On the other hand, a device being referred to as "directly on" refers to not intervening another device or layer in the middle. Like reference numerals refer to like elements throughout. "And / or" include each and any combination of one or more of the mentioned items.

Although the first, second, etc. are used to describe various components, these components are of course not limited by these terms. These terms are only used to distinguish one component from another. Therefore, of course, the first component mentioned below may be a second component within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, "comprises" and / or "comprising" does not exclude the presence or addition of one or more other components in addition to the mentioned components.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

The spatially relative terms " below ", " beneath ", " lower ", " above ", " upper " It may be used to easily describe the correlation of a component with other components. Spatially relative terms are to be understood as including terms in different directions of components in use or operation in addition to the directions shown in the figures. For example, when inverting an element shown in the figures, an element described as "below" or "beneath" of another element may be placed "above" another element . Thus, the exemplary term "below" can encompass both an orientation of above and below. The components can be oriented in other directions as well, so that spatially relative terms can be interpreted according to the orientation.

First, a manufacturing process of a switching device or a switching circuit including the switching device according to an embodiment of the present invention will be described with reference to FIG. 1. However, in the manufacturing process of the switching element according to the present embodiment, it should be noted that the contents obvious to those skilled in the art may not be explicitly described.

First, a hard mask layer 30 for patterning using deep reactive ion etching DRIE is formed on a wafer S10 formed of the semiconductor layer 20 formed on the substrate 10 (S20). The substrate 10 may be formed of, for example, glass, and the hard mask layer 30 may be, for example, a tetraethly orthosilicate (TEOS) layer.

The semiconductor layer 20 may be a film formed of silicon.

According to an embodiment, the semiconductor layer 20 may be formed with a metal plating layer such as nickel or copper formed on the substrate 10. In this case, the resistance of the semiconductor layer 20 is reduced, which is advantageous in terms of signal transmission.

Next, a PR (PhotoResist) layer 40 is formed on the hard mask layer 30, and the PR layer 40 is patterned in the shape of the switching element or the switching circuit including the switching element (S30).

Next, after etching the hard mask layer 30 in the same manner as the shape of the PR layer 40 (S40), the PR layer 40 is removed through an ashing process (S50). Next, the semiconductor layer 20 is etched in the same manner as the shape of the hard mask layer 30 by using the DRIE (S60).

Next, in order to form a trench in the substrate 10 at the bottom of the movable region of the semiconductor layer 20, the bottom of the movable region is formed by undercut etching through an etch hollow 113 formed at regular intervals in the movable region of the semiconductor layer 20. Remove the substrate (S70). As a result, since the movable region and the substrate 10 below the movable region are spaced apart from each other, the movable region is connected to a fixed region formed by stacking the upper portion of the semiconductor layer 20 on the substrate 10 and an elastic seam region having elasticity. The movable area can be moved for a predetermined section.

Next, the conductive layer 50 is formed on the upper end of the semiconductor layer 20 (S80). For the formation of the conductive layer, for example, thermal evaporation, sputtering or the like can be used. The conductive layer 50 may be, for example, a film formed of gold (Au).

2A to 10 are plan views of a switching element formed by the above process or a switching circuit including the switching element. In FIGS. 2A to 10, regions where the semiconductor layer 20 is removed by etching are illustrated in white.

The structure and operation of the switching device according to an embodiment of the present invention will be described with reference to FIGS. 2A to 2C.

2A is a plan view of the OFF state of the switching element according to the present embodiment, FIG. 2B is a plan view of the intermediate state of the switching element according to the present embodiment, and FIG. 2C is a plan view of the ON state of the switching element according to the present embodiment . Hereinafter, the 'OFF state' is a state in which the first electrode and the second electrode of the switching element are not connected to each other, and the 'ON state' is a state in which the first electrode and the second electrode of the switching element are connected to each other, and the 'middle state' May be understood as meaning a transitional state when the state changes from the 'ON state' to the 'OFF state' or when the state changes from the 'OFF state' to the 'ON state'.

The switching element includes a first electrode 100 and a second electrode 102 formed on the substrate 10. The first electrode 100 may be divided into a fixed region 101, a movable region 112, and a seam region 105 and 110 connected to each other.

The fixed region 101 is fixed on the substrate 10, and an input voltage may be applied through the fixed region 101. In addition, the fixed region 101 may be connected to a frame (not shown) of the semiconductor layer 20. That is, the fixed region 101 may be a partial region of a frame (not shown) of the semiconductor layer 20 to which an input voltage is applied. The movable area 112 and the seam areas 105 and 110 are spaced apart from the substrate 10. The movable region 112 and the seam regions 105 and 110 may be formed on the substrate 10 to be spaced apart from the trench formed in the substrate 10. That is, unlike the movable region 112, the movable region 112 and the seam regions 105 and 110 are not fixed on the substrate 10 and are movable within a predetermined range.

The movable region 112 moves in a direction which is not the same as the direction of the acceleration in response to the acceleration applied to the substrate 10 in accordance with the motion of the device in which the switching element is installed, and contacts the second electrode 102 to turn on. A state is formed or is spaced apart from the second electrode 102 to form an OFF state.

The seam regions 105 and 110 connecting the fixed region 101 and the movable region 112 to each other have a first shape in the ON state and the OFF state, and an elastic tilting having a second shape by an external force in the intermediate state. (tilting) means. The external force is generated by the movement of the movable region 112.

In the switching element according to the present embodiment, when the external force defined by the shape and the elastic modulus is not given, the elastic tilting means that does not deform from the first shape to the second shape is turned off. It can be supported so as not to change to an intermediate state, and it can be prevented from turning ON below a predetermined acceleration threshold. The shape and elastic modulus of the elastic tilting means may be defined by the acceleration threshold.

In more detail, the switching element according to the present embodiment has to go through an intermediate state in order to change from the OFF state to the ON state or to change from the ON state to the OFF state. In order for 112 to move, an external force is applied to the elastic tilting means so that the shape may be deformed by the elasticity of the elastic tilting means to have the second shape. Since the switching element according to the present invention is defined as that may occur due to the movement of the movable region 112, the switching element according to the present embodiment is in the ON state only when the movement is performed at an acceleration equal to or greater than the acceleration threshold. The OFF state is switched. It will be readily understood that the transition to the ON state or the OFF state depends on the direction of movement of the switching element. In addition, since the second shape is not the original shape of the elastic tilting means, but the original shape is deformed by its elasticity as a result of external force being applied, the second shape is not stable in terms of elastic energy. It will be understood that it has a property to be restored to the first shape from the shape, and the property is switched between the ON state and the OFF state.

In other words, when a force greater than a predetermined external force is applied to the elastic tilting means by the movement of the movable region 112, the elastic tilting means is deformed to its second shape by its elasticity, and the elastic tilting means is As the second shape is deformed, the movable region 112 may move in a direction that is not the same as the acceleration direction given to the switching element so as to be in contact with and spaced apart from the second electrode 102.

The structure and operation of the switching device according to the modified embodiment of the present embodiment will be described with reference to FIGS. 2A to 2C. According to the present embodiment, the elastic tilting means is a tilting bar 110 having both ends connected to the movable region, and the seam region is a hollow 107 formed between the tilting bar 110 and the movable region. It may further include. In this case, the second shape of the tilting bar 110 may be a shape in which the first shape is bent in the hollow 107 direction. The hollow 107 may be formed as an area where the center point of the tilting bar 110 according to the second shape does not contact the movable area 112. 2A to 2C, the hollow 107 is illustrated in a rectangular shape, but is not necessarily limited to the rectangular shape. The first shape may be linear as shown in FIGS. 2A and 2C, but need not necessarily be linear.

2A to 2C, when the seam region includes an elastic joint 105 connecting the tilting bar 110 and the center point and the fixing region 101 of the tilting bar 110, The operation of the switching element will be described. At this time, the elastic joint 105 does not shrink in the axial direction between the surfaces in contact with the fixed region 101 and the tilting bar 110, the width of the central portion of the shaft is narrower than the width of both ends of the shaft Due to it can be bent around the central portion of the axis. In addition, when the movable region 112 moves in contact with the second electrode 102 or is spaced apart from the second electrode 102, rotation of the movable region 112 occurs due to the bending of the elastic joint 105. It may further include a guide (not shown) to prevent.

As shown in FIG. 2A, the movable region 112 of the first electrode 100 in the OFF state is spaced apart from the second electrode. When the switching element moves at a predetermined acceleration, the movable region 112 of the first electrode 100 receives inertia in a direction opposite to the acceleration direction 1. As a result, the elastic joint 105 exerts an external force on the center point of the tilting bar 110. It is natural that the external force increases proportionally as the magnitude of the acceleration increases. The tilting bar 110 is not deformed into the second shape until the magnitude of the external force is greater than or equal to a predefined value. Hereinafter, the external force that the tilting bar 110 is deformed into the second shape will be referred to as a threshold external force. The threshold external force is preferably generated when the magnitude of the acceleration is the acceleration threshold.

When the magnitude of the acceleration is less than or equal to the acceleration threshold, the tilting bar 110 is not deformed into the second shape, so that the movable region 112 of the first electrode 100 moves to be in contact with the second electrode 102. Can't. On the other hand, when the magnitude of the acceleration exceeds the acceleration threshold, as shown in Figure 2b, the tilting bar 110 is deformed into the second shape, the switching element is temporarily in an intermediate state, As shown in FIG. 2C, the tilting bar 110 is soon deformed into the first shape, and the switching element is turned on.

As described above, the operation of changing the switching element from the OFF state to the ON state has been described, but the operation of changing from the ON state to the OFF state according to the direction of the acceleration applied to the switching element is also changed from the OFF state to the ON state. It will be clearly understood that the same may be performed under the same principle as the changing operation.

The structure of the switching device according to the modified embodiment of the present embodiment will be described with reference to FIGS. 3 to 5. The seam region of the switching element according to the present embodiment includes an arm 108, a first elastic bending portion 104 connecting the arm 108 and the fixed region 101, and the arm 108 and the tilting bar 110. It may further include a second elastic bending portion 106 connecting the center point of the.

In addition, the seam region may further include a third elastic bending portion 116 and a fourth elastic bending portion 118 connecting the fixed region and the movable region 112. The third elastic bending part 116 may be connected to the area 120 which is a part of the fixing area, and the fourth elastic bending part 118 may be connected to the area 122 which is a part of the fixing area.

The third elastic bending portion 116 and the fourth elastic bending portion 118 move the movable region 112 in contact with or spaced apart from the second electrode 102. 112 may be the guide to prevent the rotation.

In the switching device according to the present exemplary embodiment, the connection between the movable region 112 and the fixed region 101 may include two bending portions in a movement in a direction in which the second electrode 102 of the movable region 112 is contacted or spaced apart. 104, 106, and in the intermediate state the movement of the movable region 112 in the opposite direction of the fixed region 101 is impossible by the third elastic bending portion 116 and the fourth elastic bending portion 118. Therefore, there is an effect of reducing the curvature of the movement trajectory of the direction in contact with or spaced apart from the second electrode 102 of the movable region 112. When the curvature of the movement trajectory is reduced, the ON state and the OFF state change are impossible without the bending of the tilting bar 110, thereby preventing the ON state and the OFF state change when the magnitude of the acceleration is less than or equal to the acceleration threshold. It can work.

Hereinafter, a switching circuit according to an embodiment of the present invention will be described with reference to FIGS. 6 to 7. The switching circuit according to the present embodiment includes a switching element of one of the above-described embodiments, and an RC circuit (not shown) having one end connected to the second electrode and the other end connected to the ground terminal. At this time, an output terminal is connected between the resistor and the capacitor of the RC circuit. When the switching element is in the ON state, an applied voltage is applied to the capacitor through the resistor, and since the voltage is not applied to the output terminal until the charging is completed, the switching element is in advance even after the switching element is in the ON state. There is an effect that can delay the application of voltage to the output terminal for a defined time. For example, if the switching circuit is used in a safety mounting device (S & A), even if the switching element malfunctions and becomes ON under the acceleration threshold, the delay effect of the RC circuit may explode before the minimum safety guarantee time. You can prevent this from happening.

6 and 7 illustrate the latch 200 as a means for preventing a malfunction of the switching element. The switching circuit according to the present embodiment is formed on the substrate which releases the latching preventing the ON state from being formed by the rotational motion corresponding to the electrostatic force generated by applying the input voltage to the first electrode 100 of the switching element. The latch 200 may further include. The detailed structure of the latch 200 in which the input voltage is applied to generate the constant power is shown in detail in FIG. 10, and the related operation will be described in detail below.

The movable region 112 of the switching element for the latching of the latch 200 may further include a latch engaging portion 210. It should be noted that, when the latch 200 is released by moving away from the latch catching portion 210 and moving away from the latch catching portion 210, a friction force may occur between the latch catching portion 210 and the latch 200, and the frictional force may be generated. Since the latch 200 may not be released, the latch 200 should release the latch by operating away from the latch engaging portion 210 by the rotational motion.

6 is a switching circuit when the latch 200 is latching the movable region 112 of the switching element, and the switching element is in the OFF state. Even though a voltage is applied through the fixed region 101, the first electrode and the second electrode 102 are spaced apart from each other so that the applied voltage is not applied to the RC circuit (not shown).

The switching circuit according to the present embodiment is formed on the substrate 10, one end of which is grounded, and is provided with at least one first ON state maintaining electrode 304 protruding toward the movable region 112 of the switching element. It may further include a state maintaining unit 306. In this case, the movable region 112 further includes at least one second ON state maintaining electrode 302 protruding toward the first ON state maintaining electrode 304, and includes a pair of corresponding first ON state maintaining electrodes ( It will be appreciated that the distance between 304 and the second ON state maintaining electrode 302 decreases as it goes from OFF to ON. 6 and 7, the first ON state maintaining electrode 304 should be located closer to the second electrode 102 than the corresponding second OFF state maintaining electrode 302.

The first ON state maintaining electrode 304 and the second ON state maintaining electrode 302 maintain the ON state of the switching element by electro-static force generated by the potential difference applied to each. In more detail, since the first ON state maintaining electrode 304 is grounded, the electrostatic force is a voltage applied to the second ON state maintaining electrode 302, that is, an input applied through the fixed region 101 of the switching element. The larger the voltage is, the shorter the distance between the first ON sustain electrode 304 and the second ON sustain electrode 302 is, the more the number of the first ON hold electrode 304 and the second ON hold electrode 302 is. It is clear that the more, the bigger.

When the switching element is in the OFF state, the distance between the first ON state maintaining electrode 304 and the second ON state maintaining electrode 302 is determined by the external force on the tilting bar 110 generated by the electrostatic force generated by the input voltage. Do not exceed the threshold external force.

7 is a switching circuit when the latch 200 is released and the switching element is in the ON state. In this case, the distance between the first ON state sustain electrode 304 and the second ON state sustain electrode 302 becomes short, and the first ON state sustain electrode 304 and the second ON state sustain electrode 302 act on each other. The ON state of the switching element is maintained by the constant power. The electrostatic force is indicated by 'F' in FIG.

However, it should be noted that a stopper for preventing the first ON state maintaining electrode 304 and the second ON state maintaining electrode 302 from contacting each other in the ON state should be provided. The stopper may be provided separately on the substrate. Alternatively, as shown in FIGS. 6 and 7, the pair of corresponding first ON state maintaining electrodes 304 in which the distance 'd2' between the movable region 112 and the second electrode 102 is in an OFF state. And shorter than the distance 'd1' between the second ON state maintaining electrode 302 to allow the second electrode 102 to serve as the stopper. That is, between the movable region 112 and the second electrode 102 at a distance d1 between the pair of corresponding first ON state maintaining electrodes 304 and the second ON state maintaining electrodes 302 in the OFF state. Subtracting the distance 'd2' results in the distance 'd3' between the first ON state sustain electrode 304 and the second ON state sustain electrode 302 in the ON state.

A switching circuit according to a modified embodiment of the present embodiment will be described with reference to FIGS. 8 to 10. Unlike the above embodiment, the switching circuit according to the present modified embodiment may include two or more switching elements. Hereinafter, a switching circuit including two switching elements will be described for convenience of description.

10 is a plan view of the switching circuit according to the present embodiment, and FIGS. 8 and 9 are enlarged views of the OFF state maintaining unit 406 and the second switching element 600.

In the switching circuit according to the present embodiment, the first switching element 500, the second switching element 600, and one end thereof are connected to the second electrode 102 of the first switching element 500, and the other end thereof is connected to the ground terminal. A first RC circuit having a first output terminal connected between the first resistor 702 and the first capacitor 704, one end of which is connected to the second electrode 102 of the second switching element 600, and the other end of which is A second RC circuit and a substrate 10 connected to a ground terminal, and having a second output terminal 710 connected between a second resistor 706 and a second capacitor 708, one end of which is connected to the first output terminal. And an OFF state maintaining part 406 connected to and having at least one first OFF state maintaining electrode 404 protruding toward the movable region 112 of the second switching element 600, wherein the first switching is performed. The first electrode 100 of the element 500 is directly connected to the first electrode 100 of the second switching element 600, and the movable region 112 of the second switching element 600 is formed of the first electrode 100. The apparatus further includes at least one second OFF state maintaining electrode 402 protruding toward the 1 OFF state maintaining electrode 404. The acceleration thresholds of the first switching device 500 and the second switching device 600 may be the same.

The OFF state maintaining unit 406 uses the point that the voltage applied to the first OFF state maintaining electrode 404 is zero before the voltage is applied through the first output terminal, so that the magnitude of the acceleration applied to the switching circuit is increased. Even when the acceleration threshold is exceeded, through the constant power generated between the first OFF state maintaining electrode 404 and the second OFF state maintaining electrode 402 to which the input voltage is applied, such that there is no voltage applied and grounded, As shown in FIG. 8, even when the latch 200 is released, the state of the second switching device 600 is not turned on until the first switching device 500 is turned on. At this time, as shown in FIGS. 8 and 9, the first OFF state maintaining electrode 404 should be located farther from the second electrode 102 than the corresponding second OFF state maintaining electrode 402. Also shown in FIG. 10 are first and second OFF state sustain electrodes 402, 404 (540).

In the switching circuit according to the present exemplary embodiment, the ON state of the first switching element 500 is caused by a rotational motion corresponding to the electrostatic force generated by applying an input voltage to the first electrode 100 of the first switching element 500. The second switching device may be formed by a rotational motion corresponding to the electrostatic force generated by applying an input voltage to the first latch 200 and the first electrode 100 of the first switching device 500 to release the latches that prevent formation. It may further include a second latch 202 for releasing the latch to prevent the formation of the ON state of the 600.

An operation of the first latch 200 and the second latch 202 will be described with reference to FIG. 10. First, it can be seen that the first electrode 100 of the first switching device 500 according to the switching circuit shown in FIG. 10 is part of a frame of the semiconductor layer 20. Therefore, when the input voltage is applied to the frame, that is, when the input voltage is applied to the first electrode 100 of the first switching device 500, the first latch 200 and the second latch 202 also The input voltage is applied. In this case, the electrostatic force is generated between the electrostatic force generating electrodes provided in the first latch 200 and the second latch 202 and the corresponding electrode in the grounded state, so that the first latch 200 and the second latch 202 are generated. Releases the latching of the first switching element 500 and the second switching element 600, respectively. However, it is preferable that a latch stopper (not shown) is further formed on the substrate 10 so that the electrostatic force generating electrode and the corresponding electrode in the grounded state approach each other by electrostatic force, but do not contact each other.

As shown in FIG. 10, the first latch 200 and the second latch 202 may include a latch ring, a latch arm connecting the latch ring, a constant power generating electrode connected to the latch arm and protruding toward a corresponding electrode; The latch arm may include an elastic latch bending part connected to the frame to pivot the latch arm and having a narrower width than the latch arm.

The switching circuit according to the present embodiment is formed on the substrate 10, one end of which is grounded, and the at least one first ON state maintaining electrode 304 protruding toward the movable region 112 of the first switching element 500. And an ON state maintaining part 306 having at least one first ON state maintaining electrode 304 protruding toward the movable region 112 of the second switching element 600. The operation may be performed by the first switching element 500 and the second switching element 600. In this case, the movable region 112 of the first switching element 500 and the second switching element 600 may include at least one second ON state maintaining electrode 302 protruding toward the first ON state maintaining electrode 304. The distance between the pair of corresponding first ON state maintaining electrodes and the second ON state maintaining electrodes decreases as the ON state becomes from the OFF state. Also shown in FIG. 10 are first and second ON state sustain electrodes 302, 304 (520).

Hereinafter, the operation of the switching circuit according to the present embodiment will be described with reference to FIG. 10.

First, an input voltage is applied to the first electrode 100 of the first switching device to release the latching of the first switching device 500 and the second switching device 600. A method of simultaneously releasing latches on the first switching element 500 and the second switching element 600 may include a method of releasing the latching on the second switching element 600 after the first switching element 500 is turned on. On the other hand, since the time required for latching does not act as an error, there is an effect that the delay time from the time when the acceleration threshold is exceeded to the output signal output can be calculated accurately.

Although the latching of the second switching device is released by the electrostatic force caused by the voltage difference between the voltage applied to the second OFF state maintaining electrode of the second switching device 600 and the voltage of the first OFF state maintaining electrode, the first switching device is Before being turned on, the second switching element remains in the OFF state.

If the switching circuit moves with an acceleration above the threshold acceleration,

The first switching element 500 transitions to the ON state, and the gap between the second ON state maintaining electrode 302 and the first ON state maintaining electrode 304 of the first switching element 500 decreases, so that the first switching is performed. The ON state of the first switching element 500 is maintained by the electrostatic force caused by the voltage difference between the second ON state maintaining electrode 302 and the first ON state maintaining electrode 304 of the element 500.

Next, a first delay is performed until the charging of the first capacitor 704 is completed, and after the first delay, a first output voltage is applied to the first output terminal, so that the first OFF state sustaining electrode 404 is connected to the first delay state. As the output voltage is applied, the voltage difference between the second OFF state maintaining electrodes 402 is reduced, and thus, the electrostatic force is also reduced, thereby releasing the OFF state maintenance of the second switching element 600.

When the switching circuit continues to move at an acceleration equal to or greater than the acceleration threshold value, the second switching element 600 also turns ON. At this time, the interval between the second ON state maintaining electrode 302 and the first ON state maintaining electrode 304 of the second switching element 600 decreases, so that the second ON state maintaining electrode of the second switching element 600 is reduced. The ON state of the second switching element 600 is maintained by the constant power caused by the voltage difference between the 302 and the first ON state maintaining electrode 304.

Finally, after the second delay is made until the charging of the second capacitor 708 is completed, the output voltage is applied to the second output terminal 710.

Although a switching circuit having two switching elements is shown in FIG. 10, in some embodiments a switching circuit having three or more switching elements is configurable by the principles described above.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, You will understand. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

100 first electrode
101 fixed area
104, 106 First elastic bending part, second elastic bending part
112 operating area
108 arm
110 tilting bar
102 second electrode
500 first switching element
600 second switching element

Claims (11)

Board;
A first electrode formed on the substrate; And
Including a second electrode formed on the substrate,
The first electrode includes a fixed region, a movable region and a joint region connected to each other, the fixed region is fixed on the substrate, the movable region and the joint region are spaced apart from the substrate,
The movable region moves in response to the acceleration of the substrate to form an ON state in contact with the second electrode, or to be spaced apart from the second electrode to form an OFF state.
The seam area connecting the fixed area and the movable area to each other has a first shape in the ON state and the OFF state, and has an elastic shape having a second shape due to the external force generated by the movement of the movable area in the intermediate state. Switching element comprising a tilting means. The method of claim 1,
The elastic tilting means is a tilting bigo that both ends are connected to the movable region,
The seam region further comprises a hollow formed between the tilting bar and the movable region. The method of claim 2,
And the second shape of the tilting bar is a shape in which the first shape is bent in the hollow direction. The method of claim 2,
The seam region includes an arm, a first elastic bending portion connecting the arm and the fixed region, and a second elastic bending portion connecting the center point of the arm and the tilting bar. The method of claim 1,
The seam region further includes a third elastic bending portion and a fourth elastic bending portion connecting the fixed region and the movable region. The switching device according to any one of claims 1 to 5; And
And a RC circuit, one end of which is connected to the second electrode and the other end of which is connected to a ground terminal, wherein an output terminal is connected between the resistor and the capacitor of the RC circuit. The method according to claim 6,
An ON state maintaining part formed on the substrate, one end of which is grounded, and having at least one first ON state maintaining electrode protruding toward the movable region of the switching element,
The movable region further includes at least one second ON state sustain electrode protruding toward the first ON state sustain electrode,
And a distance between the pair of corresponding first ON state sustaining electrodes and the second ON state sustaining electrode decreases as it goes from the OFF state to the ON state. The method of claim 7, wherein
And a latch formed on the substrate for releasing latches that prevent the formation of the ON state by a rotational motion corresponding to an electrostatic force generated by applying an input voltage to the first electrode. A first switching element according to any one of claims 1 to 5;
A second switching element according to any one of claims 1 to 5;
A first RC circuit having one end connected to the second electrode of the first switching element, the other end connected to the ground terminal, and a first output terminal connected between the first resistor and the first capacitor;
A second RC circuit having one end connected to the second electrode of the second switching element, the other end connected to the ground terminal, and a second output terminal connected between the second resistor and the second capacitor; And
An OFF state maintaining part formed on the substrate, one end of which is connected to the first output end and having at least one first OFF state maintaining electrode protruding toward the movable region of the second switching element,
The first electrode of the first switching element is directly connected to the first electrode of the second switching element, and the movable region of the second switching element is at least one protruding toward the first OFF state maintaining electrode. And a second OFF state holding electrode. The method of claim 9,
A first latch for releasing a latch that prevents formation of the ON state of the first switching element by a rotational motion corresponding to an electrostatic force generated by applying an input voltage to the first electrode of the first switching element; And
And a second latch for releasing latches that prevent the formation of the ON state of the second switching element by a rotational motion corresponding to an electrostatic force generated by applying an input voltage to the first electrode of the first switching element. Circuit. The method of claim 9,
At least one first ON state holding electrode formed on the substrate, one end of which is grounded, and protruding toward the movable area of the first switching element and at least one first protruding toward the movable area of the second switching element 1 further comprising an ON state maintaining unit having an ON state maintaining electrode,
The movable region of the first switching element and the movable region of the second switching element further include at least one second ON state sustain electrode protruding toward the first ON state sustain electrode.
And a distance between the pair of corresponding first ON state sustaining electrodes and the second ON state sustaining electrode decreases as it goes from the OFF state to the ON state.

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