KR101238002B1 - Liquid crystal display device of horizontal electronic field applying type and fabricating method thereof - Google Patents

Abstract

The present invention relates to a horizontal field application type liquid crystal display device and a method of manufacturing the same that can reduce light leakage and viewing angle disturbances.

A horizontal field application liquid crystal display device according to the present invention comprises: a color filter substrate having a color filter array formed on a first substrate; And a thin film transistor substrate having a thin film transistor array formed on a second substrate bonded to the first substrate with a liquid crystal cell interposed therebetween, wherein the color filter substrate is formed of reactive mesogen, and varies according to position. And an optical compensation layer having a thickness.

Description

Horizontal field-applied liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY DEVICE OF HORIZONTAL ELECTRONIC FIELD APPLYING TYPE AND FABRICATING METHOD THEREOF}

1 is a cross-sectional view schematically showing a conventional horizontal field application liquid crystal display device.

2 is a cross-sectional view schematically showing another conventional horizontal field application liquid crystal display device.

3 is a plan view illustrating a horizontal field application liquid crystal display according to an exemplary embodiment of the present invention.

4A and 4B are cross-sectional views illustrating a thin film transistor substrate and a color filter substrate cut along lines II ′ and II-II ′ of FIG. 3.

5A to 5C are cross-sectional views illustrating a manufacturing process of a color filter substrate.

6A to 6D are cross-sectional views illustrating a manufacturing process of a thin film transistor substrate.

BRIEF DESCRIPTION OF THE DRAWINGS FIG.

4, 104: data line 6, 106: thin film transistor

8, 108: gate electrode 10, 110: source electrode

12 and 112 drain electrodes 13 and 113 pixel contact holes

14, 114: pixel electrode 18, 118: common electrode

31, 131: lower polarizer 32, 132: upper polarizer

33, 133: lower substrate 34, 134: upper substrate

35, 135: gate insulating film 36, 136: black matrix

38, 138: color filter 40: overcoat layer

41, 141: liquid crystal 70, 170: thin film transistor substrate

80, 180: color filter substrate 102: gate line

116: common line 120: storage capacitor

121: storage contact hole 122: storage electrode

140: reward layer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a horizontal field application type liquid crystal display device and a method of manufacturing the same, which can reduce light leakage and viewing angle disturbances.

The liquid crystal display device displays an image by adjusting the light transmittance of the liquid crystal using an electric field. Such a liquid crystal display device is classified into a vertical electric field application type and a horizontal electric field application type depending on the direction of an electric field for driving the liquid crystal.

In the vertical field application type liquid crystal display, a liquid crystal of TN (Twisted Nematic) mode is driven by a vertical electric field formed between the pixel electrode and the common electrode disposed to face the upper and lower substrates. The vertical field-applied liquid crystal display device has an advantage of having a large aperture ratio while having a narrow viewing angle of about 90 °.

In the horizontal field application type liquid crystal display, a liquid crystal in IPS (In Plane Switching) mode is driven by a horizontal electric field between a pixel electrode and a common electrode arranged side by side on a lower substrate. The horizontal field application type liquid crystal display device has a wide viewing angle of about 160 °. Hereinafter, a horizontal field application liquid crystal display device will be described in detail.

The horizontal field application liquid crystal display device includes a thin film transistor substrate (lower substrate) and a color filter substrate (upper substrate) bonded to each other, a spacer for keeping a cell gap constant between the two substrates, and a liquid crystal filled in the cell gap. Equipped.

The thin film transistor substrate is composed of a plurality of signal lines and a thin film transistor for forming a horizontal electric field in pixels, and an alignment film coated thereon for liquid crystal alignment. The color filter substrate is composed of a color filter for color implementation and a black matrix for light leakage prevention, and an alignment film coated thereon for liquid crystal alignment.

1 is a cross-sectional view schematically illustrating a thin film transistor substrate and a color filter substrate of a conventional horizontal field application liquid crystal display device.

Referring to FIG. 1, the thin film transistor substrate 70 includes a gate line and a data line 4 formed on the lower substrate 31 to cross each other, a thin film transistor formed at each crossing portion thereof, and a pixel having a cross structure. The pixel electrode 14 and the common electrode 18 are formed to form a horizontal electric field in the region.

The thin film transistor causes the pixel signal of the data line 4 to be charged and held in the pixel electrode 14 in response to the gate signal of the gate line. For this purpose, the thin film transistor includes a gate electrode connected to the gate line, a source electrode connected to the data line 4, and a drain electrode connected to the pixel electrode to form a channel between the source electrode.

The pixel electrode 14 is connected to the drain electrode of the thin film transistor and is formed in the pixel region.

The common electrode 18 is connected to the common line and formed in the pixel region.

The gate line and the data line 4 receive signals from the gate driver and the data driver through the gate pad and the data pad.

The common line receives a common voltage from a common voltage source through a common pad.

Accordingly, a horizontal electric field is formed between the pixel electrode 14 supplied with the pixel signal through the thin film transistor and the common electrode 18 supplied with the common voltage through the common line.

The color filter substrate 80 has a black matrix 36 which prevents light leakage and improves contrast by absorbing external light, a color filter 38 for color implementation, and an overcoat layer for planarization of the color filter 38 ( 40).

The liquid crystal molecules 41 arranged in the horizontal direction between the alignment layer 39 of the thin film transistor substrate 70 and the alignment layer 42 of the color filter substrate 80 are rotated by dielectric anisotropy due to the horizontal electric field. In addition, the light transmittance passing through the pixel region is changed according to the degree of rotation of the liquid crystal molecules 41 to realize gray scale.

The lower polarizer 31 located on the rear surface of the thin film transistor substrate 70 and the upper polarizer 32 located on the rear surface of the color filter substrate 80 are disposed so that the light transmission axes are perpendicular to each other. That is, the light passing through the liquid crystal molecules 41 passes through the upper polarizing plate 32 when the linearly polarized light is changed by the liquid crystal molecules 41. However, if the linearly polarized light of the light does not change by the liquid crystal molecules 41, the upper polarizing plate 32 Not pass)

On the other hand, when black is implemented through the horizontal field-applied liquid crystal display, the linearly polarized light by the lower polarizer 31 is not sufficiently absorbed by the upper polarizer 32, so that the position deviates from the front of the liquid crystal display, that is, the side surface. In the case of the light leakage phenomenon, the amount and color characteristics of light are different from those seen from the front. In particular, when the viewing angle is ± 70 °, the light transmittance is high and light leakage occurs most. The upper light lower polarizers 32 and 31 have a structure in which a protective layer having a light absorption axis is laminated with a polarizer having a light transmission axis therebetween, and the protective layer has a uniaxial property having a constant delay value. This is because the polarization direction of the polarizing plate is modified.

In addition, when driving the horizontal field-applied liquid crystal display, the viewing angle crosstalk (“VAC”) occurs when the portion A shown in FIG. 1 is viewed in the direction of the arrow. This phenomenon is caused by the inclination of the liquid crystal due to voltage fluctuations caused by parasitic capacitance occurring between the data line 4 and the adjacent pixel electrode 14.

In order to solve this VAC problem, the method of forming the black matrix 36 wide to cover the A portion where VAC occurs as shown in Fig. 2, but the new problem that the opening ratio is reduced by widening the black matrix 36 This happens.

In addition, there is a method of reducing the distance between the data line 4 and the adjacent common electrode 18 to a minimum in order to reduce the parasitic cap between the data line 4 and the adjacent pixel electrode 14 that cause the VAC. There is also a limit to greatly reducing the VAC phenomenon.

Accordingly, it is an object of the present invention to provide a horizontal field application type liquid crystal display device and a method of manufacturing the same that can reduce light leakage and viewing angle disturbances.

In order to achieve the above object, a horizontal field application type liquid crystal display device according to the present invention comprises: a color filter substrate having a color filter array formed on a first substrate; And a thin film transistor substrate having a thin film transistor array formed on a second substrate bonded to the first substrate with a liquid crystal cell interposed therebetween, wherein the color filter substrate is formed of reactive mesogen, and varies according to position. And an optical compensation layer having a thickness.

The color filter substrate further includes a first polarizing plate formed on a rear surface of the first substrate.

The thin film transistor substrate further includes a second polarizing plate formed on a rear surface of the second substrate.

The color filter array may include a black matrix that separates the pixel area on the first substrate; It includes a plurality of color filters formed between the black matrix.

The thin film transistor array may include a gate line formed on the second substrate; A data line crossing the gate line and insulated from the gate line to determine a pixel area; A thin film transistor formed at an intersection of the gate line and the data line; A common line formed in parallel with the gate line; A common electrode extending in the common line and formed in the pixel area; And a pixel electrode connected to the thin film transistor to form a horizontal electric field in the common electrode and the pixel region.

The optical compensation layer is formed to have a thickness greater than that of other portions between the data line and the pixel electrode.

The optical compensation layer is formed on the color filter.

The color filter substrate further includes an overcoat layer for planarization of the color filters.

The optical compensation layer is formed anywhere between the first polarizing plate and the first substrate, and between the first substrate and the color filter.

The color filter substrate further includes a first compensation film formed between the first polarizing plate and the first substrate, and the thin film transistor substrate further includes a second compensation film formed between the second polarizing plate and the second substrate. do.

The first and second polarizers have light transmission axes that cross each other.

A method of manufacturing a horizontal field application type liquid crystal display device according to the present invention includes the steps of: preparing a first substrate and a second substrate bonded to each other with the first substrate and the liquid crystal cell interposed therebetween; Forming a color filter substrate comprising a color filter array on the first substrate; Forming a thin film transistor substrate including a thin film transistor array on the second substrate, wherein the forming of the color filter substrate is a reactive mesogen, an optical compensation having a different thickness depending on position Forming a layer.

The forming of the color filter substrate may further include forming a first polarizing plate on a rear surface of the first substrate.

The forming of the thin film transistor substrate may further include forming a second polarizing plate on the rear surface of the second substrate.

The forming of the color filter array may include forming a black matrix on the first substrate that separates the pixel areas; Forming a plurality of color filters with the black matrix therebetween.

The forming of the thin film transistor array may include forming a gate line on the second substrate; Forming a data line crossing the gate line to be insulated from the gate line to determine a pixel area; Forming a thin film transistor at an intersection of the gate line and the data line; Forming a common line parallel to the gate line; Forming a common electrode in the pixel region by extending the common line; And forming a pixel electrode connected to the thin film transistor and forming a horizontal electric field in the common electrode and the pixel region.

The optical compensation layer is formed to have a thickness greater than that of other portions between the data line and the pixel electrode.

The optical compensation layer is formed on the color filter.

Forming the color filter substrate further includes forming an overcoat layer for planarization of the color filters.

The optical compensation layer is formed anywhere between the first polarizing plate and the first substrate, and between the first substrate and the color filter.

The forming of the color filter substrate may further include forming a first compensation film between the first polarizing plate and the first substrate, and forming the thin film transistor substrate may include forming the second polarizing plate and the second substrate. And forming a second compensation film therebetween.

The first and second polarizers are formed to have light transmission axes that cross each other.

Other objects and advantages of the present invention will become apparent from the following description of preferred embodiments of the present invention with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 3 to 6D.

3 is a plan view schematically illustrating a horizontal field application type liquid crystal display device according to an exemplary embodiment of the present invention using a four mask process, and FIGS. 4A and 4B illustrate lines II ′ and II-II ′ of FIG. 3. It is sectional drawing which shows the thin film transistor substrate and color filter substrate which were cut | disconnected along.

3 to 4B, the thin film transistor substrate 170 may include a gate line 102 and data formed to cross each other with a gate insulating layer 135 therebetween on a lower substrate 131 on which a lower polarizer 131 is formed. The line 104, the thin film transistor 106 formed at each intersection thereof, the pixel electrode 114 and the common electrode 118 formed to form a horizontal electric field in the pixel region provided with the intersection structure, and the common electrode 118 And a common line 116 connected to it. In addition, the thin film transistor substrate 170 further includes a storage capacitor 120 formed at an overlapping portion of the pixel electrode 114 and the common line 116.

The gate line 102 for supplying the gate signal and the data line 104 for supplying the data signal are formed in a cross structure to define a pixel area.

The common line 116 for supplying a reference voltage for driving the liquid crystal is formed in parallel with the gate line 102 with the pixel region therebetween.

The thin film transistor 106 keeps the pixel signal of the data line 104 charged and held in the pixel electrode 114 in response to the gate signal of the gate line 102. To this end, the thin film transistor 106 forms a channel between the gate electrode 108 connected to the gate line 102, the source electrode 110 connected to the data line 104, and the source electrode 110. An active layer overlapping the drain electrode 110, the gate electrode 108, and the gate insulating layer 135 connected to the pixel electrode 114 to form a channel between the source electrode 110 and the drain electrode 112 ( 148, an ohmic contact layer 150 for ohmic contact between the source electrode 110, the drain electrode 112, and the active layer 148.

The pixel electrode 114 is connected to the drain electrode 112 of the thin film transistor 106 through the pixel contact hole 113 passing through the passivation layer 137 and formed in the pixel area. The pixel electrode 114 is connected to the drain electrode 112 and is formed in parallel with the adjacent gate line 102 and the first horizontal portion 114a and the second horizontal portion 114c formed to overlap the common line 116. And a finger portion 114b formed side by side between the first and second horizontal portions 114a and 114c.

The common electrode 118 is connected to the common line 116 and is formed in the pixel area. The common electrode 118 is formed parallel to the finger portion 114b of the pixel electrode 114 in the pixel area.

The storage capacitor 120 includes a common line 116 and a storage electrode 122 connected to the pixel electrode 114 through the storage contact hole 121. The storage capacitor 120 allows the pixel signal charged in the pixel electrode 114 to be stably maintained until the next pixel signal is charged.

Gate line 102 and data line 104 receive signals from gate and data drivers through gate pads and data pads.

The common line 116 receives a common voltage from a common voltage source through a common pad.

Accordingly, a horizontal electric field is formed between the pixel electrode 114 supplied with the pixel signal through the thin film transistor 106 and the common electrode 118 supplied with the common voltage through the common line 116. In particular, a horizontal electric field is formed between the finger portion 114c of the pixel electrode 114 and the common electrode 118.

The color filter substrate 180 includes a black matrix 136 that prevents light leakage on the upper substrate 134 on which the upper polarizer 132 is formed and increases external contrast by absorbing external light, and a color filter 138 for implementing colors. ), And a compensation layer 140 to planarize the color filter 138 and serve as a compensation film.

As the compensation layer 140, a light leakage phenomenon may be solved using a reactive mesogen (RM) material having a retardation property, that is, a constant delay value. In this case, the B region in which the VAC phenomenon occurs in the related art is made thicker than the other parts by making the thickness of the compensation layer 140 higher, thereby changing the viewing angle to compensate for the VAC phenomenon.

The compensation layer 140 may be formed between the upper polarizer 132 and the upper substrate 134 and between the upper substrate 134 and the color filter 138 in addition to the positions shown in the drawings, in which the color filter 138 The overcoat layer is formed on the same as before.

The liquid crystal molecules 141 arranged in the horizontal direction between the thin film transistor substrate 170 and the color filter substrate 180 are rotated by the dielectric anisotropy due to the horizontal electric field. In addition, the light transmittance passing through the pixel region is changed according to the degree of rotation of the liquid crystal molecules 141, thereby implementing gray scale.

The lower polarizer 131 disposed on the rear surface of the thin film transistor substrate 170 and the upper polarizer 132 disposed on the rear surface of the color filter substrate 180 are disposed such that the light transmission axes are perpendicular to each other. That is, the light passing through the liquid crystal molecules 141 passes through the upper polarizing plate 132 when the linearly polarized light is changed by the liquid crystal molecules 141, but if the linearly polarized light of the light does not change by the liquid crystal molecules 141, the upper polarizing plate 132 Will not pass). The upper and lower polarizers 132 and 131 are attached after the thin film transistor substrate 170 and the color filter substrate 180 are bonded to each other. In this case, in order to reduce light leakage, the upper and lower compensation films may be prepared and attached together. As the compensation film, an A-plate, a C-plate, a biaxial film, or the like can be used.

A method of manufacturing a liquid crystal display according to an exemplary embodiment of the present invention will be described with reference to FIGS. 5A to 6D.

5A to 5C are diagrams illustrating the upper and lower parts of the color filter substrate 180 shown in FIG. 4A to explain the manufacturing process of the color filter substrate 180.

Since the color filter substrate 180 illustrated in FIG. 4B is the same substrate as the color filter substrate 180 illustrated in FIG. 4A and has the same stacking order, the color filter substrate 180 will be described with reference to FIG. 4A.

First, referring to FIG. 5A, after the opaque material is deposited on the upper substrate 134, the black matrix 136 is formed by patterning the opaque material by a photolithography process and an etching process using a mask.

The photosensitive red resin is entirely deposited on the upper substrate 134 on which the black matrix 136 is formed. On the upper substrate 134 on which the red resin is deposited, a mask having an exposure area and a blocking area is aligned. Subsequently, the red resin exposed through the exposure area is removed by a photolithography process and an etching process using a mask, and the red resin that is not exposed through the blocking area is left to form a red color filter.

The green resin is deposited on the entire surface of the upper substrate 134 on which the red color filter is formed. The green color filter is formed by repeating the same mask process as the red color filter forming process.

The blue resin is deposited on the entire surface of the upper substrate 134 on which the green color filter is formed. The blue color filter is formed by repeating the same mask process as the red and green color filter formation.

Through this process, the color filter 138 is formed as shown in FIG. 5B.

The compensation layer 140 is formed as shown in FIG. 5C by applying the RM material on the upper substrate 134 on which the color filter 138 is formed by spin coating or the like. In this case, the photoresist pattern is used to form a portion B of the compensation layer 140, that is, a portion corresponding to the data line 104 and the pixel electrode 114 of the thin film transistor substrate 170 thicker than the other portion. To give a step to the compensation layer 140.

The compensation layer 140 may be formed between the upper polarizer 132 and the upper substrate 134 and between the upper substrate 134 and the color filter 138 in addition to the positions shown in the drawings, in which the color filter 138 The overcoat layer is formed on the same as before.

6A through 6D are views illustrating a manufacturing process of the thin film transistor substrate 170 illustrated in FIGS. 4A and 4B.

A method of manufacturing the thin film transistor substrate 170 using the four mask process will be described with reference to FIGS. 3 and 6A through 6D.

In this figure, the description will be made through a four mask process, but the liquid crystal display of the present invention is irrelevant to the number of masks.

First, a gate metal pattern including the gate line 102, the gate electrode 108, and the common electrode 118 is formed on the lower substrate 133 using the first mask process as illustrated in FIG. 6A.

In detail, the gate metal layer is formed on the lower substrate 133 through a deposition method such as a sputtering method. Subsequently, the gate metal layer is patterned by a photolithography process and an etching process using a first mask to form a gate metal pattern including the gate line 102, the gate electrode 108, and the common electrode 118. As the gate metal layer, a metal such as Al, Mo, Cr or the like is used in a single layer or a double layer structure.

The gate insulating layer 135 is coated on the lower substrate 133 on which the gate metal pattern is formed as shown in FIG. 6B. The semiconductor pattern including the active layer 148 and the ohmic contact layer 150 on the gate insulating layer 135, the data line 104, the source electrode 110, and the drain electrode 112 are formed on the gate insulating layer 135 using the second mask process. A source / drain metal pattern comprising a is formed.

In detail, the gate insulating layer 135, the amorphous silicon layer, the n + amorphous silicon layer, and the source / drain metal layer are sequentially formed on the lower substrate 133 on which the gate metal pattern is formed through a deposition method such as PECVD or sputtering. . Here, as the material of the gate insulating film 135, an inorganic insulating material such as SiOx or SiNx is used. As the source / drain metal layer, a metal such as Al, Mo, Cr or the like is used in a single layer or a double layer structure. Next, a photoresist pattern having a step is formed on the source / drain metal layer by a photolithography process using a second mask. A source / drain metal layer is patterned by a wet etching process using a stepped photoresist pattern to include a source / drain including a data line 104, a source electrode 110, and a drain electrode 112 integrated with the source electrode 110. A drain metal pattern is formed. The ohmic contact layer 150 and the active layer 148 are formed by simultaneously patterning the n + amorphous silicon layer and the amorphous silicon layer by a dry etching process using the same photoresist pattern. Subsequently, the source electrode 110 and the drain electrode 112 are separated by ashing the photoresist pattern and etching the exposed source / drain metal pattern together with the ohmic contact layer 150, and the source / drain metal pattern through a strip process. The photoresist pattern remaining above is removed.

A passivation layer 137 including a pixel contact hole 113 and a storage contact hole 121 is formed on the gate insulating layer 135 on which the source / drain metal pattern is formed, as illustrated in FIG. 6C.

In detail, the passivation layer 137 is entirely formed on the gate insulating layer 135 on which the source / drain metal pattern is formed by a deposition method such as PECVD. Subsequently, the passivation layer 137 is patterned by a photolithography process and an etching process using a third mask to form the pixel contact hole 113 and the storage contact hole 121. The pixel contact hole 113 penetrates the passivation layer 137 to expose the drain electrode 112, and the storage contact hole 121 penetrates the passivation layer 137 to expose the storage electrode 122.

As the material of the protective film 137, an inorganic insulating material such as the gate insulating layer 135, an acrylic insulating compound having a low dielectric constant, an organic insulating material such as BCB or PFCB, or the like is used.

A transparent conductive pattern including the pixel electrode 114 is formed on the passivation layer 137 as shown in FIG. 6D.

In detail, the transparent conductive film is apply | coated on the protective film 137 by the vapor deposition method, such as sputtering. Subsequently, the transparent conductive layer is etched through the photolithography process and the etching process using the fourth mask, thereby forming a transparent conductive pattern including the pixel electrode 114. The pixel electrode 114 is connected to the drain electrode 112 exposed through the pixel contact hole 113 and the storage electrode 122 exposed through the storage contact hole 121.

Here, indium tin oxide (ITO) or the like is used as a material of the transparent conductive film.

After bonding the color filter substrate 180 and the thin film transistor substrate 170 formed through the above process, the upper and lower polarizers 131 and 132 are attached as shown in FIGS. 4A and 4B. In this case, in order to reduce light leakage, the upper and lower compensation films may be prepared and attached together.

As described above, the horizontal field application type liquid crystal display device and the method of manufacturing the same according to the present invention form a compensation layer formed of RM material to solve the light leakage phenomenon, and make the compensation layer of the part where the viewing angle disorder occurs thicker than other parts. By forming, the viewing angle can be changed to compensate for the viewing angle disorder.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be defined by the claims.

Claims (22)

A color filter substrate having a color filter array formed on the first substrate; A thin film transistor substrate having a thin film transistor array formed on a second substrate bonded to the first substrate with a liquid crystal cell interposed therebetween, And the color filter substrate is formed of reactive mesogen and has an optical compensation layer having a different thickness depending on the position. The method according to claim 1, The color filter substrate, And a first polarizing plate formed on the rear surface of the first substrate. 3. The method of claim 2, The thin film transistor substrate, And a second polarizing plate formed on the rear surface of the second substrate. The method of claim 3, The color filter array, A black matrix separating pixel areas on the first substrate; And a plurality of color filters formed with the black matrix therebetween. 5. The method of claim 4, The thin film transistor array, A gate line formed on the second substrate; A data line crossing the gate line and insulated from the gate line to determine the pixel area; A thin film transistor formed at an intersection of the gate line and the data line; A common line formed in parallel with the gate line; A common electrode extending in the common line and formed in the pixel area; And a pixel electrode connected to the thin film transistor and forming a horizontal electric field in the common electrode and the pixel region. 6. The method of claim 5, The optical compensation layer, And the thickness of the portion corresponding to between the data line and the pixel electrode is thicker than that of the other portion. The method according to claim 6, The optical compensation layer, And a color field applied to the color filter. The method according to claim 6, The color filter substrate, And a overcoat layer for flattening the color filters. The method of claim 8, The optical compensation layer, And the first substrate and the color filter disposed between the first polarizing plate and the first substrate. The method of claim 9, The color filter substrate further includes a first compensation film formed between the first polarizing plate and the first substrate, The thin film transistor substrate further comprises a second compensation film formed between the second polarizing plate and the second substrate. The method of claim 3, The first and second polarizing plate, A horizontal electric field application type liquid crystal display device having light transmission axes that cross each other. Providing a first substrate and a second substrate bonded to each other with the first substrate and the liquid crystal cell interposed therebetween; Forming a color filter substrate comprising a color filter array on the first substrate; Forming a thin film transistor substrate including a thin film transistor array on the second substrate, The forming of the color filter substrate may include forming an optical compensation layer having a different thickness according to a position using a reactive mesogen. 13. The method of claim 12, Forming the color filter substrate, And forming a first polarizing plate on the back surface of the first substrate. 14. The method of claim 13, Forming the thin film transistor substrate, And forming a second polarizing plate on the back surface of the second substrate. 15. The method of claim 14, Forming the color filter array, Forming a black matrix on the first substrate, the black matrix dividing a pixel region; And forming a plurality of color filters with the black matrix interposed therebetween. The method of claim 15, Forming the thin film transistor array, Forming a gate line on the second substrate; Forming a data line crossing the gate line to be insulated from the gate line to determine the pixel area; Forming a thin film transistor at an intersection of the gate line and the data line; Forming a common line parallel to the gate line; Forming a common electrode in the pixel region by extending the common line; And forming a pixel electrode connected to the thin film transistor, the pixel electrode forming a horizontal electric field in the common electrode and the pixel region. The method of claim 16, The optical compensation layer, And a thickness of a portion corresponding to between the data line and the pixel electrode is thicker than that of other portions. 18. The method of claim 17, The optical compensation layer, And a horizontal field applied liquid crystal display device formed on the color filter. 18. The method of claim 17, Forming the color filter substrate, And forming an overcoat layer for planarization of the color filters. The method of claim 19, The optical compensation layer, And the first substrate and the color filter, between the first polarizing plate and the first substrate. The method of claim 20, The forming of the color filter substrate further includes forming a first compensation film between the first polarizing plate and the first substrate, The forming of the thin film transistor substrate may further include forming a second compensation film between the second polarizing plate and the second substrate. 15. The method of claim 14, The first and second polarizing plate, A method for manufacturing a horizontal field application type liquid crystal display device, characterized in that it is formed to have a light transmission axis crossing each other.

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