KR101269777B1 - Terahertz band phase shifting device using signal leakage and beamforming system using thereof - Google Patents

Abstract

A technique relating to a terahertz band phase shift device is disclosed.
The terahertz band phase shift device according to an embodiment of the present invention changes the phase of the input signal passing through the MOSFET element by using a MOSFET element that operates in a state where signal leakage occurs in a frequency band of the input signal. By improving the efficiency and power efficiency of the system design and manufacturing, it is possible to solve the problems of signal leakage and insertion loss occurring in the ultra-high frequency band.

Description

Terahertz band phase shifting device using signal leakage and beamforming system using

The present invention relates to a technique for changing the phase of a signal, and more particularly, to a phase change device for changing the phase of a signal using a passive element in the terahertz frequency band and a beam-forming system using the same.

The phase shifter or phase shifter refers to a device for changing the phase of an output signal with respect to an input signal. The phase shifter is a circuit used in a transmission / reception module for wireless communication. In particular, the phase shifter is used in a beamforming system that adjusts a beam pattern by using a phased array antenna such as a microwave radar or a satellite antenna system. It is a key component that changes the phase of the signal supplied to the antenna and dictates the overall system performance.

Recently, with the development of wireless communication technology, a millimeter wave band communication system technology that enables large-scale data transmission using a wide frequency band per communication channel has already been commercialized, and further, a terahertz frequency band (0.1 THz to 10 THz) of 100 GHz or more frequency band. There is a rapidly increasing demand for wireless communication system technology using the

However, when the phase shifter using the conventional passive switching element is used in the ultra-high frequency band of 100 GHz or more, it does not operate normally due to the large insertion loss and low isolation characteristic of the semiconductor switching elements by the CMOS process. there is a problem. In addition, when using a MEMS (Micro-ElectroMechanical Systems) switch that is physically opened and closed according to the bias voltage to improve the switching performance, there is a problem that the design is complicated and the cost is increased. Furthermore, when applying a technology based on an active element such as using two or more amplifiers instead of a passive switching element, it is difficult to design a phase shifter having low power efficiency and bidirectionality.

Accordingly, there is an urgent need for a new phase shifter technology that can improve insertion loss while using passive devices in the terahertz frequency band of 100 GHz or more.

The present invention aims to facilitate system design and fabrication, reduce manufacturing costs, and improve power efficiency by varying the phase of an input signal using passive elements in the terahertz frequency band above 100 GHz.

In addition, the present invention is to solve the signal leakage problem and insertion loss problem when the MOSFET device is used as a switching device by applying a new method using the MOSFET device as a kind of phase change device.

The terahertz band phase shift device according to an embodiment of the present invention changes the phase of the input signal passing through the MOSFET element by using a MOSFET element that operates in a state where signal leakage occurs in a frequency band of the input signal. Turn on.

In this case, the terahertz band phase shift device may change the phase of the input signal by adjusting the gate voltage of the MOSFET device.

According to another aspect of the present invention, there is provided a terahertz band phase shifting device, comprising: a phase change circuit unit having a MOSFET element operating in a state in which signal leakage occurs in a frequency band of an input signal; And a phase change controller for controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device.

In this case, the phase change circuit unit may include a first MOSFET device and a second MOSFET device which are operated in a state where a signal leakage occurs in each input signal frequency band and are connected in series with each other.

The phase shift circuit unit may further include a matching circuit for maintaining an input match between an output terminal of the first MOSFET device and an input terminal of the second MOSFET device connected in series with the output terminal of the first MOSFET device. .

In this case, the matching circuit may be configured as a microstrip line or a CWP line.

In addition, the phase change circuit unit may include a phase delay circuit connected in parallel between the input terminal and the output terminal of the MOSFET device to delay the phase of the signal.

In this case, the phase delay circuit may be composed of a transmission line.

The phase delay circuit may further include an additional MOSFET device connected to the transmission line and operating in a state where signal leakage occurs in a frequency band of the signal passing through the transmission line.

In this case, the transmission line may be composed of a microstrip line or a CWP line.

The phase change circuit may include: a first circuit including a first MOSFET element that operates in a state where signal leakage occurs in a frequency band of an input signal; A second circuit including a second MOSFET element and a third MOSFET element which operate in a state where a signal leakage occurs in each input signal frequency band and are connected in series with each other; A third MOSFET including a fourth MOSFET element operating in a state where signal leakage occurs in a frequency band of the input signal, and a phase delay circuit connected in parallel between an input terminal and an output terminal of the fourth MOSFET element and delaying a phase of the signal. Circuit; And a fifth MOSFET element operating in a state where signal leakage occurs in a frequency band of an input signal, a transmission line connected in parallel between an input terminal and an output terminal of the fifth MOSFET element and delaying a phase of the signal; A fourth circuit including a sixth MOSFET element connected to and operating in a state where signal leakage occurs in a frequency band of the signal passing through the transmission line may include a circuit combining one or more circuits.

A beamforming system according to an embodiment of the present invention includes a divider unit for distributing an input signal through a divider and outputting signals distributed through a plurality of paths; A phase change device for changing a phase of the distributed signal passing through the MOSFET device by using a MOSFET device operating in a state where signal leakage occurs in a frequency band of the distributed signal; And an antenna unit configured to form a beam pattern in a predetermined direction by using the output signal of the phase shift device.

According to the present invention, by changing the phase of the input signal using only passive elements in the terahertz frequency band, not only active elements, the system design and manufacturing ease and versatility, while reducing the manufacturing cost as well as the power efficiency of the entire system. It can be improved.

In addition, by applying a new method of changing the phase of the signal by using the signal leakage phenomenon of the MOSFET device occurring in the high frequency band, it is possible to solve the signal leakage problem when the MOSFET device is used as a switching device.

In addition, by enabling the use of a MOSFET device having a sufficient gate width, it is possible to solve the insertion loss problem when using a MOSFET device having a narrow gate width to prevent signal leakage.

1 is a block diagram illustrating a beam-forming system according to an embodiment of the present invention.
2 is a view showing a change in reflection coefficient S11 according to a bias voltage of a MOSFET device in a 1 GHz low frequency band.
3 is a view showing a reflection coefficient S11 change according to an equivalent model and a bias voltage of a MOSFET device in a high frequency band of 100 GHz.
4 is a diagram illustrating an insertion loss S21 according to a gate width and a frequency band of a MOSFET device.
5 is a view showing a 90 degree phase shift apparatus according to an embodiment of the present invention.
Figure 6 is a graph showing the insertion loss and phase change of the 100GHz band of the phase changer according to FIG.
7 is a view showing a 90 degree phase shift apparatus according to another embodiment of the present invention.
FIG. 8 is a graph illustrating a 100 GHz band insertion loss and a phase change of the phase changer according to FIG. 7. FIG.
9 is a view showing a 180 degree phase shift apparatus according to an embodiment of the present invention.
FIG. 10 is a graph illustrating a 100 GHz band insertion loss and a phase change of the phase changer according to FIG. 9. FIG.
11 shows an example of a two bit switch-line phase shifter.
12 is a graph showing the insertion loss and the phase change of the 100 GHz band of the 2-bit switch-line phase shifter according to FIG.
13 illustrates a 2-bit phase shifting device according to an embodiment of the present invention.
FIG. 14 is a graph illustrating a 100 GHz band insertion loss and a phase change of the 2-bit phase changer according to FIG. 13. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings in order to clarify a solution related to the technical problem of the present invention. However, in describing the present invention, when it is determined that the description of the related known technology may make the gist of the present invention unclear, the description thereof will be omitted. In addition, terms to be described later are terms defined in consideration of functions in the present invention, which may vary according to intentions or customs of users, operators, and the like. Therefore, the definition should be based on the contents throughout this specification.

1 is a block diagram of a beamforming system according to an embodiment of the present invention.

As shown in FIG. 1, the beam-forming system 100 may include a divider unit 110, a phase change device 120, and an antenna unit 130. In addition, an input signal having a frequency of a terahertz band (a band of 0.1 THz or more) input from a predetermined signal source is distributed through a divider to output a signal distributed through a plurality of paths.

The phase shift device 120 may be configured to pass through the MOSFET device using a metal oxide semiconductor field effect transistor (MOSFET) device operating in a state in which signal leakage occurs in a frequency band of the divided signal. Change the phase of the distributed signal. In this case, the phase change device 120 may change the phase of the input signal by adjusting the gate voltage of the MOSFET device. To this end, the phase change device 120 may include a phase change control unit 122. And a phase change circuit unit 124. That is, the phase change circuit unit 124 includes the MOSFET element that operates in a state where signal leakage occurs in the frequency band of the input signal, and the phase change control unit 122 controls the gate voltage of the MOSFET element. To control the phase of the input signal passing through the MOSFET element.

In addition, the antenna unit 130 forms a beam pattern in a predetermined direction by using an output signal whose phase is changed from the phase change device 120.

More specifically, MOSFET devices to which CMOS processes such as NMOS and PMOS are applied are used as switching elements for selecting a signal passing path in a commonly used switch-line type phase changer. That is, these MOSFET devices perform an on operation of passing a signal and an off operation of blocking a signal by adjusting a bias voltage of a gate. However, despite the advances in the CMOS process, MOSFET devices can perform these switch mode operations relatively accurately only in the low frequency bands, and in the frequency band above 30 GHz, the isolation is drastically deteriorated, resulting in large switching performance. The problem of deterioration arises.

FIG. 2 shows a Smith chart showing a change in reflection coefficient S11 according to a bias voltage of a MOSFET device in a 1 GHz low frequency band.

As shown in FIG. 2, a switching operation may be implemented by biasing a threshold voltage at a gate without applying a voltage to a drain and a source of the MOSFET device Q ₁ . Can be. For example, when the bias voltage Vg is 0 [V], the MOSFET device Q ₁ operates in an open state, and when the bias voltage Vg is 1 [V] or more, the MOSFET device Q ₁ operates in a short state. Done. However, these MOSFET devices suffer losses as the frequency increases and parasitic capacitor components increase between the source and drain, resulting in a sharp deterioration of the blocking characteristics already in the millimeter wave band. Therefore, MOSFET devices cannot operate normally as switching devices in the band above 30 GHz, and as a result, the terahertz band cannot substantially use a switch-line phase shifter using passive switching devices.

Accordingly, the phase change device 120 changes the phase of the input signal passing through the MOSFET device by using a MOSFET device operating in a state where signal leakage occurs in the frequency band of the input signal. It should be noted that in the present invention, the MOSFET device does not simply operate in a switch mode, even when a signal leakage occurs in a predetermined high frequency band, for example, when the bias voltage Vg is 0 [V]. It is operated in a state where signal transmission is possible due to signal leakage (hereinafter referred to as Leaky-Varistor mode). Therefore, in the present invention, the MOSFET element is not a simple switching element, but a kind of phase shifting element for changing the phase of the input signal by adjusting the gate voltage Vg in a state where signal leakage occurs. ) Is used.

FIG. 3 shows a circuit diagram of an equivalent model of a first MOSFET device in a 100 GHz high frequency band, and a Smith chart shows a change in reflection coefficient S11 according to a bias voltage of the first MOSFET device.

As shown in FIG. 3, the first MOSFET device 300 in the 100 GHz high frequency band includes a channel resistance component R _ch and a parasitic capacitor component C _s between the drain and the source, which are variable according to the gate voltage Vg. Will occur. In addition, substrate loss R _sub , parasitic capacitor components C _jd and C _js around the drain and source, and parasitic inductor component L _m occur. Among these parasitic components, in particular, the channel resistance component (R _ch ) and the parasitic capacitor component (C _s ) between the drain and the source are factors that greatly influence the MOSFET design. That is, in the case of the MOSFET device operating in the switch mode, there is a problem in that the blocking characteristic of the device is deteriorated due to the parasitic capacitor component C _s between the drain and the source. In order to solve this problem, when the gate width of the device is reduced, there is a problem that a large insertion loss occurs due to an increase in the channel resistance component R _ch . These problems are a major cause for phase shifters using MOSFET devices as switching devices to be unavailable in the terahertz band.

Accordingly, the phase change device 120 adjusts the gate voltage Vg in the leaky-varistor mode in which the signal leakage of the first MOSFET device 300 occurs, thereby controlling the input of the signal input to the first MOSFET device 300. Use a method of changing the phase. That is, the present invention does not need to reduce the gate width more than necessary because it uses the phenomenon that the signal leakage occurs in the MOSFET device, as a result has a signal leakage problem and narrow gate width when the MOSFET device is used as a switching device The use of MOSFET devices can solve the insertion loss problem at the same time.

4 is a graph showing the insertion loss (S21) change according to the gate width and the frequency band of the MOSFET device.

As shown in FIG. 4, even when the gate voltage Vg is 0 [V], signal leakage is increased toward the terahertz band, thereby reducing insertion loss. For example, the MOSFET device operates as a switching device based on the frequency at which the insertion loss is -10 dB, that is, the frequency band of the switch mode (S-mode) and the gate voltage Vg of the MOSFET device is 0 [V]. In this case, the signal leakage occurs, that is, the frequency band of the Leaky-Varistor mode (LK-mode). In addition, as shown in FIG. 4, it can be seen that the frequency band of the Leaky-Varistor mode (LK-mode) changes as the gate width Wgate varies. This is because the parasitic capacitor value C _s between the drain and the source, which is the largest cause of the leaky-varistor mode, is changed according to the gate width Wgate. Therefore, the frequency band in which the Leaky-Varistor mode appears can be selected by adjusting the gate width according to the intention or purpose of the designer, the manufacturer, or the like. However, when the gate width Wgate is reduced more than necessary, the channel resistance value R _ch when the gate voltage Vg is a threshold value (for example, 1 [V]) is increased, resulting in a large insertion loss. As a result, it is desirable to design to use the Leaky-Varistor mode of the MOSFET device with the appropriate gate width.

5 shows a 90 degree phase shift device according to one embodiment of the invention.

As illustrated in FIG. 5, the 90-degree phase shift device may be implemented in a single path-double device (SPDD) structure using one path and two devices. That is, the phase change device includes a second MOSFET element 510 and a third MOSFET element 520 which are operated in a Leaky-Varistor mode in which a signal leakage occurs in each input signal frequency band and connected in series. can do. In this case, the phase shift device may include input matching between an output terminal of the second MOSFET element 510 and an input terminal of the third MOSFET element 520 connected in series with the output terminal of the second MOSFET element 510. It may further include a matching circuit 500 to maintain matching. In one embodiment, the matching circuit 500 may be composed of a microstrip line or a coplanar waveguide line.

FIG. 6 is a graph showing simulation results of the change of phase insertion loss and the change of phase of the 100 GHz band of the phase changer according to FIG. 5. A 0.13μm CMOS device and an Advanced Design System (ADS) program were used to perform the simulation of the present invention.

As shown in FIG. 6, since the phase change is limited to a single MOSFET device operating in the Leaky-Varistor mode, a 90 degree phase change may be obtained using the SPDD structure. That is, in the SPDD structure, the same bias voltage Vg is applied to the gates of the second MOSFET element 510 and the third MOSFET element 520, and the bias voltage Vg is 0 [V]. If the output signal phase is 0 degrees, a 90 degree delay occurs in the output signal phase when the bias voltage Vg is 1 [V]. In addition, the insertion loss S21 is also -5 dB or less, so that good results can be obtained.

7 shows a 90 degree phase shift device according to another embodiment of the present invention.

As illustrated in FIG. 7, the 90-degree phase shift device may be implemented in a double path-single device (DPSD) structure using two paths and one device. That is, the 90-degree phase change device is a phase connected in parallel between the fourth MOSFET element 710 operating in the Leaky-Varistor mode and the input terminal and the output terminal of the fourth MOSFET element 710 and delaying the phase of the signal. Delay circuit 700 may be included. In this case, the phase delay circuit 700 may be implemented in various forms according to the design purpose. For example, it can be implemented as an LC circuit including a capacitive element and an inductive element, as well as a transmission line to simplify the design and reduce the volume. In one embodiment, the transmission line may comprise a microstrip line or a CWP line.

FIG. 8 is a graph showing simulation results of a change in phase insertion loss and a change in phase of the 100 GHz band of the phase changer according to FIG. 7.

As shown in FIG. 8, a 90 degree phase change may be obtained using the DPSD structure. That is, in the SPDD structure, when the bias voltage Vg applied to the gate of the fourth MOSFET element 710 is 1 [V], if the output signal phase is 0 degrees, the bias voltage Vg is 0 [V]. ] Causes a 90-degree delay in the output signal phase. In addition, the insertion loss S21 is also about -5 dB, so that a good result can be obtained.

9 illustrates a 180 degree phase change device according to an embodiment of the present invention.

As illustrated in FIG. 9, the 180-degree phase shift device may be implemented in a double path-double device (DPDD) structure using two paths and two devices. That is, the 180-degree phase shift device is connected in parallel between the fifth MOSFET element 910 operating in the Leaky-Varistor mode and the input terminal and the output terminal of the fifth MOSFET element 910 to delay the phase of the signal. A sixth MOSFET element 920 connected to the phase transmission line 900 and operating in a state in which signal leakage occurs in a frequency band of a signal passing through the transmission line 900. It may include. Of course, the transmission line 900 may be composed of a microstrip line or a CWP line.

FIG. 10 is a graph showing simulation results of a change in phase insertion loss and a change in phase of the 100 GHz band of the phase changer according to FIG. 9.

As shown in FIG. 10, a 180 degree phase shift may be obtained using the DPDD structure. That is, in the DPDD structure, the bias voltage Vg1 applied to the gate of the fifth MOSFET device 910 is 1 [V], and the bias voltage Vg2 applied to the gate of the sixth MOSFET device 920 is 0 []. V], when the output signal phase is 0 degrees, the bias voltage Vg1 applied to the gate of the fifth MOSFET device 910 is 0 [V] and the bias voltage applied to the gate of the sixth MOSFET device 920. When (Vg2) is 1 [V], a 180 degree delay occurs in the output signal phase. In addition, the insertion loss S21 is also -5 dB or less, so that good results can be obtained.

On the other hand, a phase change device according to an embodiment of the present invention includes a first circuit including a single MOSFET device operating in the Leaky-Varistor mode, a second circuit including the SPDD structure, and the DPSD structure The third circuit and the fourth circuit including the DPDD structure may include one of the circuits or a combination of two or more circuits. Thus, according to the present invention, it is possible to increase the ease and variety of design and manufacturing. In addition, according to the present invention, it is possible to implement a phase change device using one MOSFET device in one path, thereby further simplifying the design and manufacturing process.

5, 7, and 9, parts indicated by other transmission lines are parts that may be variously modified for design purposes or impedance matching.

Hereinafter, the performance of the phase change device according to the present invention is verified. For performance verification, 0.13μm CMOS device and ADS (Advanced Design System) program were used.

11 illustrates an example of a two bit switch-line phase shifter.

As illustrated in FIG. 11, a two-bit switch-line phase shifter may be implemented by cascading the 180-degree switch-line phase shifter SL1 and the 90-degree switch-line phase shifter SL2.

FIG. 12 is a graph showing simulation results of a 100 GHz band insertion loss change and a phase change of the 2-bit switch-line phase shifter according to FIG. 11.

As shown in Fig. 12, when Vg2 and Vg4 are 1 [V] and Vg1 and Vg3 are 0 [V], if the phase of the output signal is 0 degrees, Vg2 and Vg3 are 1 [V] and Vg1 and Vg4 are 0. In the case of [V], a 90 degree delay occurs in the output signal phase, and when Vg1 and Vg4 are 1 [V] and Vg2 and Vg3 are 0 [V], a 180 degree delay occurs in the output signal phase. When Vg1 and Vg3 are 1 [V] and Vg2 and Vg4 are 0 [V], a 270 degree delay occurs in the phase of the output signal. However, it can be seen that the insertion loss S21 exhibits very low performance as -20 dB or less.

13 shows a 2-bit phase shifting device according to an embodiment of the present invention.

As illustrated in FIG. 13, the 2-bit phase shift device may be implemented by continuously connecting the phase change device PS1 of the DPDD structure and the phase change device PS2 of the DPSD structure.

FIG. 14 is a graph showing simulation results of a change in phase insertion loss and a change in phase of the 100 GHz band of the 2-bit phase shifter according to FIG. 13.

As shown in FIG. 14, when Vg1 is 1 [V], Vg2 is 0 [V], and Vg3 is 1 [V], if the phase of the output signal is 0 degrees, Vg1 is 1 [V] and Vg2 is 0 [ V] and Vg3 is 0 [V], there is a 90 degree delay in the output signal phase, and Vg1 is 0 [V], Vg2 is 1 [V] and Vg3 is 1 [V]. There is a 180 degree delay. When Vg1 is 0 [V], Vg2 is 1 [V], and Vg3 is 0 [V], a 270 degree delay occurs in the output signal phase. In addition, it can be seen that the insertion loss is about -9dB on average, showing a very excellent performance as a terahertz band phase shift device using a passive element.

As described above, according to the present invention, by changing the phase of the input signal using only passive elements, not active elements in the terahertz frequency band, it increases the ease and variety of system design and manufacturing, and reduces the manufacturing cost as well as the overall It can improve the power efficiency of the system. In addition, by applying a new method of changing the phase of the signal by using the signal leakage phenomenon of the MOSFET device occurring in the high frequency band, it is possible to solve the signal leakage problem when the MOSFET device is used as a switching device. In addition, by enabling the use of a MOSFET device having a sufficient gate width, it is possible to solve the insertion loss problem when using a MOSFET device having a narrow gate width to prevent signal leakage. Furthermore, it is to be understood that various embodiments in accordance with the present invention may solve many technical problems in the art, as well as those described in the related art.

So far, the present invention has been described with reference to the embodiments. It will be apparent, however, to one skilled in the art that the present invention may be embodied in various other forms without departing from the spirit or essential characteristics thereof. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. That is, the true technical scope of the present invention is indicated in the appended claims, and all differences within the scope of equivalents thereof should be construed as being included in the present invention.

100 beam forming system 110 distributor
120: phase change device 130: antenna unit
122: phase change control unit 124: phase change circuit unit
300: first MOSFET 510: second MOSFET
520: third MOSFET 710: fourth MOSFET
910: fifth MOSFET 920: sixth MOSFET

Claims (12)

A divider unit for distributing an input signal through a divider and outputting signals distributed through a plurality of paths;
A phase change device for changing a phase of the distributed signal passing through the MOSFET device by using a MOSFET device operating in a state where signal leakage occurs in a frequency band of the distributed signal; And
An antenna unit for forming a beam pattern in a predetermined direction by using the output signal of the phase shift device,
The phase shift device,
A phase change circuit unit having the MOSFET device; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device,
And said phase change circuit portion comprises a phase delay circuit connected in parallel between an input terminal and an output terminal of said MOSFET element and delaying a phase of a signal. A divider unit for distributing an input signal through a divider and outputting signals distributed through a plurality of paths;
A phase change device for changing a phase of the distributed signal passing through the MOSFET device by using a MOSFET device operating in a state where signal leakage occurs in a frequency band of the distributed signal; And
An antenna unit for forming a beam pattern in a predetermined direction by using the output signal of the phase shift device,
The phase shift device
A phase change circuit unit having the MOSFET device; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device,
The phase change circuit unit,
A first circuit comprising a first MOSFET element operating in a state where signal leakage occurs in a frequency band of the divided signal;
A second circuit including a second MOSFET element and a third MOSFET element which operate in a state where a signal leaks in a frequency band of each of the divided signals and are connected in series with each other;
And a fourth MOSFET device operating in a state where signal leakage occurs in a frequency band of the divided signal, and a phase delay circuit connected in parallel between an input terminal and an output terminal of the fourth MOSFET device and delaying a phase of the signal. Third circuit; And
A fifth MOSFET element operating in a state in which a signal leakage occurs in the frequency band of the divided signal, a transmission line connected in parallel between an input terminal and an output terminal of the fifth MOSFET element and delaying a phase of the signal and the transmission line And a fourth circuit including a sixth MOSFET element connected to the gate circuit and operating in a state in which signal leakage occurs in a frequency band of the signal passing through the transmission line. Beam-forming system. A phase change circuit section having a MOSFET element operating in a state where signal leakage occurs in a frequency band of the input signal; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device,
The phase change circuit unit, the terahertz band phase change device, characterized in that it comprises a first MOSFET element and a second MOSFET element which is operated in a state where a signal leakage occurs in each input signal frequency band and connected in series. delete The method of claim 3,
The phase shift circuit further includes a matching circuit for maintaining input matching between an output terminal of the first MOSFET device and an input terminal of the second MOSFET device connected in series with the output terminal of the first MOSFET device. Terahertz band phase shift device, characterized in that. The method of claim 5,
The matching circuit comprises a terahertz band phase shifting device, characterized in that it comprises a microstrip line or a coplanar waveguide line. A phase change circuit section having a MOSFET element operating in a state where signal leakage occurs in a frequency band of the input signal; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device,
And said phase change circuit portion comprises a phase delay circuit connected in parallel between an input terminal and an output terminal of said MOSFET element and delaying a phase of a signal. The method of claim 7, wherein
And said phase delay circuit comprises a transmission line. 9. The method of claim 8,
The phase delay circuit further comprises an additional MOSFET element connected to the transmission line and operating in a state where signal leakage occurs in a frequency band of a signal passing through the transmission line. . 10. The method according to claim 8 or 9,
The transmission line, terahertz band phase shift device, characterized in that it comprises a microstrip line or CWP line. A phase change circuit section having a MOSFET element operating in a state where signal leakage occurs in a frequency band of the input signal; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the input signal passing through the MOSFET device,
The phase change circuit unit,
A first circuit including a first MOSFET element that operates in a state where signal leakage occurs in a frequency band of the input signal;
A second circuit including a second MOSFET element and a third MOSFET element which operate in a state where a signal leakage occurs in each input signal frequency band and are connected in series with each other;
A third MOSFET including a fourth MOSFET element operating in a state where signal leakage occurs in a frequency band of the input signal, and a phase delay circuit connected in parallel between an input terminal and an output terminal of the fourth MOSFET element and delaying a phase of the signal. Circuit; And
A fifth MOSFET device operating in a state where signal leakage occurs in a frequency band of an input signal, a transmission line connected in parallel between an input terminal and an output terminal of the fifth MOSFET device and delaying a phase of the signal, and a connection with the transmission line And a fourth circuit including a sixth MOSFET element operating in a state where signal leakage occurs in a frequency band of the signal passing through the transmission line, wherein one or more circuits are combined. Terahertz band phase shifting device. A divider unit for distributing an input signal through a divider and outputting signals distributed through a plurality of paths;
A phase change device for changing a phase of the distributed signal passing through the MOSFET device by using a MOSFET device operating in a state where signal leakage occurs in a frequency band of the distributed signal; And
An antenna unit for forming a beam pattern in a predetermined direction by using the output signal of the phase shift device,
The phase shift device
A phase change circuit unit having the MOSFET device; And
A phase change control unit controlling a gate voltage of the MOSFET device to change a phase of the divided signal passing through the MOSFET device,
And said phase shift circuitry comprises a first MOSFET element and a second MOSFET element operating in a state in which signal leakage occurs in a frequency band of each of said distributed signals and connected in series with each other.

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