KR101427635B1 - The method for manufacturing the large amoled and the system therefor - Google Patents

Abstract

The present invention relates to a high dielectric constant Al _x Ti _y O _z A method for manufacturing a large area AMOLED capacitor according to the present invention is a method for manufacturing a large area AMOLED capacitor that forms a dielectric by simultaneously depositing a source on a large number of large area substrates, ) Comprising the steps of: 1) depositing Al _x Ti _y O _z Preparing a source; and 2) preparing the Al _x Ti _y O _z And depositing a source on the large area substrate using an atomic layer deposition method to form a dielectric. (Wherein x, y and z satisfy 0 < x < 2, 0 < y <

Description

BACKGROUND OF THE INVENTION Field of the Invention [0001] The present invention relates to a large-area AMOLED capacitor manufacturing method and manufacturing system,

The present invention relates to a method and a manufacturing system for a capacitor of a large-area AMOLED, and more particularly, to a method of manufacturing a capacitor having a high dielectric constant such as Al _x Ti _y O _z Area AMOLED capacitor in which a source is deposited on a large number of large-area substrates at the same time to form a dielectric.

AMOLED displays have the advantages of very fast response and wide viewing angle compared to LCD. Such an AMOLED display has an organic light emitting diode that emits light by current in each pixel and a driving unit for driving the organic light emitting diode. Basically, the driving unit includes a transistor for switching pixels and a driving transistor for supplying a current to the organic light emitting diode.

The pixel of such an AMOLED display is basically composed of a switching transistor for sampling an analog image signal, a memory capacitor for holding an image signal, and a driving circuit for controlling the current supplied to the organic light emitting diode according to the image signal voltage accumulated in the memory capacitor (Driving) transistor.

In general, the channel of the switching transistor and the driving transistor is formed of amorphous silicon or polycrystalline silicon. Since the switching transistor is a switching element that allows the supply of the data voltage to the driving transistor, low leakage current and fast response are required. Since the driving transistor supplies current to the electro-luminescence diode, high reliability is required for a long-time high current.

On the other hand, the memory capacitor is required to have a high capacitance. In general, the capacitance of a capacitor is defined by the following equation.

C =? A / d

(where? is the dielectric constant of the dielectric, A is the area of the electrode, and d is the distance between the electrodes, that is, the thickness of the dielectric).

Therefore, in order to obtain a high capacitance, it is necessary to increase the area of the electrode or to reduce the distance between the electrodes, that is, the thickness of the dielectric. However, the size of the electrode is not able to be increased anymore due to the pixel design structure of the AMOLED, and the thinning of the dielectric layer also causes a problem that the leakage current increases.

Therefore, in order to manufacture a capacitor having a high capacitance, a method of manufacturing a capacitor by depositing a dielectric material having a high dielectric constant on a large-area substrate is the only solution, and development of a technique therefor is urgently required.

The present invention has been made in view of the above problems, and it is an object of the present invention to provide a high dielectric constant Al _x Ti _y O _z Area AMOLED capacitor in which a source is simultaneously deposited on a large number of large-area substrates to form a dielectric.

According to another aspect of the present invention, there is provided a method of manufacturing a large area AMOLED capacitor, the method comprising the steps of: (1) forming an Al _x Ti _y O _z Preparing a source; and 2) preparing the Al _x Ti _y O _z And depositing a source on the large area substrate using an atomic layer deposition method to form a dielectric. (Wherein x, y and z satisfy 0 < x < 2, 0 < y <

In the present invention, the step 2) may include the steps of: a) seating the large area substrate on the substrate seating jig so that only the upper surface is exposed; b) horizontally loading a plurality of the substrate seating jigs on which the large-area substrate is mounted, the plurality of substrate seating jigs being spaced apart from each other by a predetermined distance; c) a plurality of substrates horizontally loaded in said process chamber, said Al _x Ti _y O _z Depositing a film; d) unloading the processed substrate seating jig out of the process chamber; And e) separating the large-area substrate from the substrate seating jig and discharging the large-area substrate.

Further, in the step b). It is preferable to load the plurality of substrate seating jigs so that the interval between adjacent substrate seating jigs is a laminar flow interval.

In addition, it is preferable that the step c) is performed by spraying the Al _x Ti _y O _z source in a pulse shape in a direction opposite to the one side of the substrate seating jig.

In the present invention, the Al _x Ti _y O _z source is deposited on the large-area substrate using an atomic layer deposition process for a plurality of substrates mounted on a substrate seating jig supporting the large-area substrate without deflection A process chamber; A buffer chamber which is installed adjacent to the process chamber and continuously supplies the process chamber with a plurality of substrate seating jigs to be processed, and continuously receives and holds a plurality of the processed jigs from the process chamber; Receiving the substrate seating jig mounted adjacent to the buffer chamber, separating the substrate and the jig from each other, discharging the large-area substrate to the outside, receiving a substrate supplied from the outside, And a jig distribution chamber which is placed on the seating jig and supplies the buffer chamber with the buffer chamber.

(Wherein x, y and z satisfy 0 < x < 2, 0 < y <

In the present invention, it is preferable that the buffer chamber ejects a plurality of substrate seating jigs to the jig logistics chamber while the process chamber is being processed, and receives a plurality of substrate seating jigs to be processed Do.

It is also preferable that the buffer chamber preheats the substrate seating jig and the large-area substrate held in the buffer chamber.

The jig distribution chamber separates the large-area substrate from the substrate seating jig and discharges the substrate to the outside. The large-area substrate on which the process to be supplied from the outside is placed is placed on the substrate seating jig, .

According to the present invention, for a large number of large-area substrates, a high permittivity Al _x Ti _y O _z It is possible to achieve a remarkable technical effect that a thin film can be uniformly and rapidly deposited by an atomic layer deposition method to produce a capacitor having a large capacitance.

1 is a diagram illustrating a layout of a large area AMOLED capacitor manufacturing system according to an embodiment of the present invention.

Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings.

First, a method of manufacturing a large area AMOLED capacitor according to this embodiment will be described.

In the large-area AMOLED manufacturing method according to the present embodiment, the method of manufacturing the remaining electrodes except for the method of manufacturing the dielectric is substantially the same as the general manufacturing method, and a description thereof will be omitted.

In the present embodiment, the process of preparing the dielectric includes Al _x Ti _y O _z It starts with preparing the source. The Al _x Ti _y O _z The source is suitable because it has a high dielectric constant and can be easily supplied to a chamber for an atomic layer deposition process using a source such as TMA.

In this case, the Al _x Ti _y O _z The source is made by mixing Al ₂ O ₃ and TiO ₂ in an appropriate ratio. The range of x, y, and z is determined according to the mixing ratio of Al ₂ O ₃ and TiO ₂ . Therefore, x, y and z in the above formula are varied within the range of 0 <x <2, 0 <y <1, 2 <z <3, respectively.

Next, the prepared Al _x Ti _y O _z A source is deposited on a large area substrate using an atomic layer deposition method to form a dielectric. In this embodiment, a plurality of large-area substrates are simultaneously subjected to atomic layer deposition to form the Al _x Ti _y O _z Since the source is deposited, a detailed process suitable for this is required. This atomic layer deposition process therefore consists of a number of sub-processes. This will be described in detail below.

The step of seating the large area substrate on the substrate seating jig is performed. Since the large-area substrate has a very thin thickness and a very large area, when the large-area substrate is held in a horizontal state, the central portion of the substrate is largely sagged downward. Therefore, a substrate seating jig is required to mount the large-area substrate so that the atomic layer deposition process can proceed in a horizontal state without supporting the large-area substrate downward. The large-area substrate is seated in the substrate seating jig such that only the upper surface of the substrate on which the atomic layer processing is performed is exposed.

Next, a step of loading a plurality of the substrate seating jigs with the large-area substrate mounted thereon into the process chamber is performed. At this time, a plurality of the substrate seating jigs are loaded in parallel to each other in a horizontal state. Of course, the spacing between each substrate seating jig is constantly spaced apart, and the spacing between each substrate seating jig is controlled to be a laminar flow spacing. The term "layer flow spacing" refers to an interval in which a gas injected in one direction can move in the other direction while maintaining a layer flow.

Next, a plurality of substrates horizontally loaded in the process chamber are simultaneously subjected to an atomic layer deposition method using the Al _x Ti _y O _z A step of depositing a film proceeds. In this embodiment, the Al _x Ti _y O _z The process proceeds by spraying the source in a pulse form. Needless to say, a gas suction / discharge unit for sucking the gas and discharging it to the outside must be provided in the direction opposite to the direction in which the source is sprayed.

Next, a step of unloading the substrate holding jig that has completed the process to the outside of the process chamber is performed. The plurality of substrate seating jigs that have been completed are sequentially discharged to the outside and the substrate seating jig to be newly processed is brought into the process chamber.

Next, the step of separating the large-area substrate from the substrate seating jig and discharging the processed large-area substrate is proceeded. Since the substrate seating jig is used only in the dielectric deposition process, the large-area substrate is separated from the substrate seating jig in this process and is burnt in the main logistics line for the next process.

Hereinafter, an example of a manufacturing system capable of implementing the above-described large area AMOLED capacitor manufacturing method will be briefly described. The manufacturing system 1 according to the present embodiment may include a process chamber 300, a buffer chamber 200, and a jig logistics chamber 100, as shown in FIG.

First, the process chamber 300 is a chamber in which an atomic layer deposition process is actually performed. The chamber has a structure capable of maintaining a vacuum state therein, and a gate valve is provided on one side wall to allow the substrate seating jig to be taken in and out. In the process chamber 300, an atomic layer deposition process is simultaneously performed on a plurality of substrates in a state in which a plurality of substrate seating jigs with large-area substrates are loaded horizontally. Therefore, the purging gas and the Al _x Ti _y O _z Source, etc. are sprayed in the form of pulses, and in the other direction, the atomic layer deposition process is carried out by sucking it out and discharging it to the outside.

1, the buffer chamber 200 is provided adjacent to the process chamber 300, and is continuously connected to the process chamber 300 with a plurality of substrate seating jigs to be processed. And continuously receives and holds a plurality of process jigs from the process chamber 300.

The buffer chamber 200 is provided to minimize the disconnection time of the process in the process chamber 300 and allow the loading and unloading of the substrate seating jig to be performed within a minimum time. Therefore, the buffer chamber 200 can receive a substrate holding jig that has been subjected to a plurality of processes from the process chamber 300 in a state in which a plurality of substrate seating jigs to be processed are previously supplied from outside, . In order to shorten the process time in the process chamber 300, the substrate holding jig and the substrate may be heated in advance in the buffer chamber 200.

1, the jig distribution chamber 100 is installed adjacent to the buffer chamber 200, receives the substrate seating jig on which the large-area substrate is mounted, separates the substrate from the jig, The large-area substrate is discharged to the outside, the substrate supplied from the outside is received, and the substrate is placed on the substrate seating jig and supplied to the buffer chamber 200.

The jig logistics chamber 100 is necessary to perform the atomic layer deposition process on a plurality of substrates while keeping the large-area substrate in a horizontal state without sagging. Therefore, the jig logistics chamber 100 performs a process of placing the substrate on the substrate seating jig and separating the substrate. The jig logistics chamber 100 is connected to the main logistics line 10 where the large area substrate is moved for another process.

1: The manufacturing system according to an embodiment of the present invention
100: jig logistics chamber 200: buffer chamber
300: Process chamber 10: Main logistic line

Claims (8)

A method of manufacturing a capacitor of a large area AMOLED (Active Matrix Organic Light Emitting Diode)
1) preparing a source having the formula Al _x Ti _y O _z ;
2) depositing the source on a large area substrate using an atomic layer deposition method to form a dielectric,
(Wherein x, y and z satisfy 0 < x < 2, 0 < y <
The step (2)
a) placing the large area substrate on a substrate seating jig so that only the top surface is exposed;
b) horizontally loading a plurality of the substrate seating jigs on which the large-area substrate is mounted, the plurality of substrate seating jigs being spaced apart from each other by a predetermined distance;
c) depositing an Al _x Ti _y O _z film simultaneously on a plurality of substrates horizontally loaded in the process chamber in an atomic layer deposition process;
d) unloading the processed substrate seating jig out of the process chamber;
and e) separating and discharging the large-area substrate from which the process is completed, from the substrate seating jig. delete The method according to claim 1, wherein in step b).
Wherein the plurality of substrate seating jigs are loaded so that the spacing between adjacent substrate seating jigs is a laminar flow spacing. 2. The method of claim 1, wherein step c)
Wherein the source is jiggled in a pulse shape in a direction opposite to the one side of the substrate seating jig. A process chamber for depositing a source having a chemical formula of Al _x Ti _y O _z on the large area substrate simultaneously using an atomic layer deposition process for a plurality of substrates mounted on a substrate seating jig supporting the large- ;
A buffer chamber which is installed adjacent to the process chamber and continuously supplies the process chamber with a plurality of substrate seating jigs to be processed, and continuously receives and holds a plurality of the processed jigs from the process chamber;
Receiving the substrate seating jig mounted adjacent to the buffer chamber, separating the substrate and the jig from each other, discharging the large-area substrate to the outside, receiving a substrate supplied from the outside, And a jig distribution chamber mounted on the seating jig and supplying the buffer chamber with the buffer chamber.
(Wherein x, y and z satisfy 0 < x < 2, 0 < y < 6. The apparatus of claim 5,
Wherein a plurality of substrate seating jigs that have been processed are discharged to the jig logistics chamber while the process is being performed by the process chamber, and a plurality of substrate seating jigs to be processed are received. 6. The apparatus of claim 5,
And preheating the substrate seating jig and the large-area substrate held in the buffer chamber. 6. The apparatus according to claim 5, wherein the jig distribution chamber comprises:
The large-area substrate having been processed is separated from the substrate-seating jig and discharged to the outside, and a large-area substrate on which a process to be supplied from the outside is to be placed is placed on the substrate seating jig and transferred to the buffer chamber. AMOLED capacitor manufacturing system.

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