KR101447922B1 - 증기 전달 장치, 이의 제조 방법 및 사용 방법 - Google Patents
증기 전달 장치, 이의 제조 방법 및 사용 방법 Download PDFInfo
- Publication number
- KR101447922B1 KR101447922B1 KR1020120054018A KR20120054018A KR101447922B1 KR 101447922 B1 KR101447922 B1 KR 101447922B1 KR 1020120054018 A KR1020120054018 A KR 1020120054018A KR 20120054018 A KR20120054018 A KR 20120054018A KR 101447922 B1 KR101447922 B1 KR 101447922B1
- Authority
- KR
- South Korea
- Prior art keywords
- stream
- pressure
- delivery device
- carrier gas
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D7/00—Sublimation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
- G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2499—Mixture condition maintaining or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2499—Mixture condition maintaining or sensing
- Y10T137/2501—Dividing and recombining flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2499—Mixture condition maintaining or sensing
- Y10T137/2509—By optical or chemical property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/2562—Dividing and recombining
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/265—Plural outflows
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/265—Plural outflows
- Y10T137/2657—Flow rate responsive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2559—Self-controlled branched flow systems
- Y10T137/265—Plural outflows
- Y10T137/2663—Pressure responsive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7758—Pilot or servo controlled
- Y10T137/7761—Electrically actuated valve
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
도 2는 단일 압력/유동 컨트롤러가 전달 장치를 통해 유량을 제어하는 예시적인 전달 시스템의 개략도이다.
도 3은 단일 압력/유동 컨트롤러가 전달 장치를 통해 질량 유량을 제어하는 예시적인 전달 시스템의 다른 개략도이다.
도 4는 단일 압력/유동 컨트롤러가 전달 장치를 통해 질량 유량을 제어하고 제 1 비례제어밸브가 전달 장치의 하류에 위치되는 예시적인 전달 시스템의 다른 개략도이다.
도 5는 예시적인 혼합 챔버의 개략도이다.
도 6은 다른 예시적인 혼합 챔버의 개략도이다.
Claims (10)
- 전달 시스템에 있어서,
입구 포트 및 출구 포트를 갖고, 고체 전구체를 포함하는 전달 장치;
전달 장치의 입구 포트에 연결되되, 인가 전압에 기초하여 전달 장치로의 담체 가스의 제 1 스트림의 유동을 제어하는 제 1 비례제어밸브(제 1 스트림은 전달 장치를 통과함으로써 전구체 증기를 함유한다);
전달 장치의 출구 포트에 연결되되, 인가 전압에 기초하여 전달 장치의 출구 포트로의 담체 가스의 제 2 스트림의 유동을 제어하는 제 2 비례제어밸브;
전달 장치의 하류에 위치하고 제 1 스트림을 제 2 스트림과 혼합시켜 제 3 스트림을 형성하는 혼합 챔버;
혼합 챔버의 하류에 위치되고 혼합 챔버로부터 나오는 제 3 스트림의 화학적 함량을 분석하며, 제 1 비례제어밸브에 연결되는 화학 센서; 및
전달 장치에 유체이동가능하게 연결되며, 제 3 스트림의 압력을 측정하며, 제 2 비례제어밸브에 연결되는 압력 센서;
화학 센서 및 제 1 비례제어밸브에 연결되는 제 1 압력/유동 컨트롤러; 및
압력센서 및 제 2 비례제어밸브에 연결되는 제 2 압력/유동 컨트롤러를 포함하되,
제 1 압력/유동 컨트롤러 및 제 2 압력/유동 컨트롤러는 상호 간에 독립적이며,
상기 전달 시스템은 제 3 스트림을 반응기에 전달하기 이전에, 전구체 증기의 응결을 방지하기 위하여, 제 2 스트림의 유량을 조절하여 제 3 스트림의 전구체 증기의 이슬점을 반응기의 주위 온도 아래로 감소시킴으로써, 담체 가스의 단위 체적당 일정한 몰수의 전구체 증기를 전달 시스템과 연결된 복수 개의 반응기들에 전달하는 것을 특징으로 하는 전달 시스템.
- 제 1 항에 있어서,
혼합 챔버는 제 1 스트림을 포함하는 제 1 도관 및 제 2 스트림을 포함하는 제 2 도관에 유체이동가능하게 연결된 것을 특징으로 하는 전달 시스템.
- 제 2 항에 있어서,
제 1 스트림 및 제 2 스트림은 상호 간에 접촉하기 이전에 대향 방향으로 유동하는 것을 특징으로 하는 전달 시스템.
- 제 2 항에 있어서,
제 1 스트림 및 제 2 스트림은 대향 방향으로 유동하지 않는 것을 특징으로 하는 전달 시스템.
- 제 1 항에 있어서,
제 1 스트림 및 제 2 스트림은 혼합 챔버의 일측과 제 1 도관에 대한 플랜지 사이에 형성된 채널에서 혼합되는 것을 특징으로 하는 전달 시스템.
- 삭제
- 제 1 항에 있어서,
제 1 압력/유동 컨트롤러, 제 1 비례제어밸브, 전달 장치, 혼합 챔버 및 화학 센서는 제 1 폐쇄 루프에 놓이는 것을 특징으로 하는 전달 시스템.
- 제 1 항에 있어서,
제 2 압력/유동 컨트롤러, 제 2 비례제어밸브, 혼합 챔버 및 압력 센서는 제 2 폐쇄 루프에 놓이는 것을 특징으로 하는 전달 시스템.
- 담체 가스의 제 1 스트림을 전달 장치를 통해 혼합 챔버로 이송하는 단계(전달 장치는 전구체 화합물을 포함한다);
담체 가스의 제 2 스트림을 혼합 챔버로 이송하는 단계(혼합 챔버는 전달 장치의 하류 지점에 위치된다);
혼합 챔버에서 제 1 스트림과 제 2 스트림을 결합하여 제 3 스트림을 형성하는 단계(제 1 스트림과 제 2 스트림은 상호 간에 접촉하기 이전에 상호 간에 대향 유동한다); 및
제 3 스트림을 반응기에 전달하기 이전에, 전구체 증기의 응결을 방지하기 위하여, 제 2 스트림의 유량을 제 1 스트림에 대하여 독립적으로 조절하여 제 3 스트림의 전구체 증기의 이슬점을 반응기의 주위 온도 아래로 감소시키는 단계를 포함하는 것을 특징으로 하는 방법.
- 제 9 항에 있어서, 상기 방법은,
제 3 스트림에 위치된 화학 센서로부터 제 1 압력/유동 컨트롤러, 제 2 압력/유동 컨트롤러, 또는 제 1 압력/유동 컨트롤러 및 제 2 압력/유동 컨트롤러로 신호를 전송하는 단계를 더 포함하되,
제 1 압력/유동 컨트롤러는 제 1 스트림 내의 담체 가스의 유량을 제어하고, 제 2 압력/유동 컨트롤러는 제 2 스트림 내의 담체 가스의 유량을 제어하는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/114,794 US8997775B2 (en) | 2011-05-24 | 2011-05-24 | Vapor delivery device, methods of manufacture and methods of use thereof |
| US13/114,794 | 2011-05-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120132364A KR20120132364A (ko) | 2012-12-05 |
| KR101447922B1 true KR101447922B1 (ko) | 2014-10-13 |
Family
ID=46052619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120054018A Active KR101447922B1 (ko) | 2011-05-24 | 2012-05-22 | 증기 전달 장치, 이의 제조 방법 및 사용 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8997775B2 (ko) |
| EP (1) | EP2527490B1 (ko) |
| JP (1) | JP6008563B2 (ko) |
| KR (1) | KR101447922B1 (ko) |
| CN (1) | CN102794136B (ko) |
| TW (1) | TWI553147B (ko) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9243325B2 (en) * | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
| EP3162914A1 (en) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Apparatus and method for delivering a gaseous precursor to a reaction chamber |
| US10453721B2 (en) * | 2016-03-15 | 2019-10-22 | Applied Materials, Inc. | Methods and assemblies for gas flow ratio control |
| US10927462B2 (en) * | 2016-08-05 | 2021-02-23 | Horiba Stec, Co., Ltd. | Gas control system and film formation apparatus provided with gas control system |
| JP6581552B2 (ja) * | 2016-08-10 | 2019-09-25 | 株式会社Kokusai Electric | クリーニング方法、半導体装置の製造方法、基板処理装置、及びプログラム |
| KR102607020B1 (ko) * | 2017-09-19 | 2023-11-29 | 가부시키가이샤 호리바 에스텍 | 농도 제어 장치 및 재료 가스 공급 장치 |
| KR20190072266A (ko) * | 2017-12-15 | 2019-06-25 | 삼성전자주식회사 | 소스 가스 공급 장치 및 이를 구비하는 증착 장치 |
| DE102018118771B4 (de) | 2018-08-02 | 2022-07-07 | Leoni Kabel Gmbh | Verfahren und Vorrichtung zum reproduzierbaren Erzeugen einer Preform für die Glasfaserherstellung |
| JP7281285B2 (ja) | 2019-01-28 | 2023-05-25 | 株式会社堀場エステック | 濃度制御装置、及び、ゼロ点調整方法、濃度制御装置用プログラム |
| US11519070B2 (en) * | 2019-02-13 | 2022-12-06 | Horiba Stec, Co., Ltd. | Vaporization device, film formation device, program for a concentration control mechanism, and concentration control method |
| DE102019109208B3 (de) * | 2019-04-08 | 2020-10-01 | Dürr Systems Ag | Applikationseinrichtung und entsprechendes Applikationsverfahren |
| US10930494B2 (en) * | 2019-04-09 | 2021-02-23 | Swift Solar Inc. | Vapor phase transport system and method for depositing perovskite semiconductors |
| EP3786321A3 (de) | 2019-08-27 | 2021-03-17 | Albert-Ludwigs-Universität Freiburg | Verfahren und vorrichtung zur herstellung einer schicht und damit versehenes substrat |
| JP7472272B2 (ja) * | 2019-09-10 | 2024-04-22 | アプライド マテリアルズ インコーポレイテッド | 蒸気供給方法および装置 |
| EP4069665B1 (en) * | 2019-12-02 | 2024-08-07 | Services Pétroliers Schlumberger | Reducing energy consumption in meg reclamation |
| US11661653B2 (en) * | 2019-12-18 | 2023-05-30 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor delivery systems for solid and liquid materials |
| US20210404058A1 (en) * | 2020-06-24 | 2021-12-30 | Applied Materials, Inc. | Apparatus and methods to reduce particles in a film deposition chamber |
| WO2022118744A1 (ja) * | 2020-12-04 | 2022-06-09 | 株式会社高純度化学研究所 | インジウムおよび一種以上の他の金属を含有する膜を製造するための蒸着用原料およびインジウムおよび一種以上の他の金属を含有する膜の製造方法 |
| KR20240035337A (ko) * | 2022-09-08 | 2024-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 전구체 혼합물을 반응 챔버에 제공하는 방법 |
| DE102023107631B3 (de) * | 2023-03-27 | 2024-08-01 | IB-FT GmbH | Porometer mit einer Regelvorrichtung zur Regelung eines Drucks eines Fluids |
| WO2025072547A1 (en) * | 2023-09-29 | 2025-04-03 | Lam Research Corporation | Chemical sensor for automatic flow compensation of mass flow controller |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en) * | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| KR20100108304A (ko) * | 2009-03-27 | 2010-10-06 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | 방법 및 장치 |
Family Cites Families (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1407791A (en) * | 1920-06-01 | 1922-02-28 | Pacific Foundry Company | Reenforced flange for flanged products |
| JPH01255214A (ja) * | 1988-04-05 | 1989-10-12 | Fujitsu Ltd | 液体原料供給装置 |
| US5648113A (en) * | 1994-09-30 | 1997-07-15 | International Business Machines Corporation | Aluminum oxide LPCVD system |
| US5553395A (en) | 1995-05-31 | 1996-09-10 | Hughes Aircraft Company | Bubbler for solid metal organic source material and method of producing saturated carrying gas |
| KR100228768B1 (ko) | 1996-10-02 | 1999-11-01 | 김영환 | 화학 기상증착 장치 및 증착방법 |
| US5924012A (en) | 1996-10-02 | 1999-07-13 | Micron Technology, Inc. | Methods, complexes, and system for forming metal-containing films |
| US6637475B2 (en) | 1997-07-11 | 2003-10-28 | Advanced Technology Materials, Inc. | Bulk chemical delivery system |
| US6027760A (en) | 1997-12-08 | 2000-02-22 | Gurer; Emir | Photoresist coating process control with solvent vapor sensor |
| US6453924B1 (en) | 2000-07-24 | 2002-09-24 | Advanced Technology Materials, Inc. | Fluid distribution system and process, and semiconductor fabrication facility utilizing same |
| US6161398A (en) * | 1998-04-09 | 2000-12-19 | Lucent Technologies, Inc. | Methods of and systems for vapor delivery control in optical preform manufacture |
| US6119710A (en) | 1999-05-26 | 2000-09-19 | Cyber Instrument Technologies Llc | Method for wide range gas flow system with real time flow measurement and correction |
| KR100360494B1 (ko) | 1999-09-21 | 2002-11-13 | 삼성전자 주식회사 | 기화장치 |
| EP1160355B1 (en) | 2000-05-31 | 2004-10-27 | Shipley Company LLC | Bubbler |
| JPWO2002058141A1 (ja) | 2001-01-18 | 2004-05-27 | 株式会社渡邊商行 | 気化器及びそれを用いた各種装置並びに気化方法 |
| US6701066B2 (en) | 2001-10-11 | 2004-03-02 | Micron Technology, Inc. | Delivery of solid chemical precursors |
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US6868869B2 (en) | 2003-02-19 | 2005-03-22 | Advanced Technology Materials, Inc. | Sub-atmospheric pressure delivery of liquids, solids and low vapor pressure gases |
| US6880592B2 (en) | 2003-06-26 | 2005-04-19 | Advanced Technology Materials, Inc. | Canister guard |
| US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
| US7723700B2 (en) | 2003-12-12 | 2010-05-25 | Semequip, Inc. | Controlling the flow of vapors sublimated from solids |
| US20060207503A1 (en) | 2005-03-18 | 2006-09-21 | Paul Meneghini | Vaporizer and method of vaporizing a liquid for thin film delivery |
| JP2005310851A (ja) * | 2004-04-19 | 2005-11-04 | Asm Japan Kk | 薄膜形成用ガス供給システム及び方法 |
| US7488512B2 (en) | 2004-11-29 | 2009-02-10 | Tokyo Electron Limited | Method for preparing solid precursor tray for use in solid precursor evaporation system |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US7722720B2 (en) | 2004-12-08 | 2010-05-25 | Rohm And Haas Electronic Materials Llc | Delivery device |
| US20060133955A1 (en) * | 2004-12-17 | 2006-06-22 | Peters David W | Apparatus and method for delivering vapor phase reagent to a deposition chamber |
| WO2007041454A2 (en) | 2005-10-03 | 2007-04-12 | Advanced Technology Materials, Inc. | Systems and methods for determination of endpoint of chamber cleaning processes |
| JP4960720B2 (ja) * | 2006-02-10 | 2012-06-27 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法 |
| EP1860208B1 (en) | 2006-05-22 | 2014-10-15 | Rohm and Haas Electronic Materials LLC | Film deposition method |
| US20090130337A1 (en) | 2006-10-12 | 2009-05-21 | Ovshinsky Stanford R | Programmed high speed deposition of amorphous, nanocrystalline, microcrystalline, or polycrystalline materials having low intrinsic defect density |
| US20090223441A1 (en) | 2006-11-22 | 2009-09-10 | Chantal Arena | High volume delivery system for gallium trichloride |
| US20080141937A1 (en) | 2006-12-19 | 2008-06-19 | Tokyo Electron Limited | Method and system for controlling a vapor delivery system |
| KR100855582B1 (ko) | 2007-01-12 | 2008-09-03 | 삼성전자주식회사 | 액 공급 장치 및 방법, 상기 장치를 가지는 기판 처리설비, 그리고 기판 처리 방법 |
| US7975718B2 (en) | 2007-04-16 | 2011-07-12 | Applied Materials, Inc. | In-situ monitor of injection valve |
| US20090214777A1 (en) | 2008-02-22 | 2009-08-27 | Demetrius Sarigiannis | Multiple ampoule delivery systems |
| US20090255466A1 (en) | 2008-04-11 | 2009-10-15 | Peck John D | Reagent dispensing apparatus and delivery method |
| US20090258143A1 (en) | 2008-04-11 | 2009-10-15 | Peck John D | Reagent dispensing apparatus and delivery method |
| TWI433855B (zh) | 2008-06-04 | 2014-04-11 | Univation Tech Llc | 漿液觸媒流分流器及其使用方法 |
| US8571817B2 (en) | 2008-09-10 | 2013-10-29 | Palo Alto Research Center Incorporated | Integrated vapor delivery systems for chemical vapor deposition precursors |
| CN102272351B (zh) | 2008-11-11 | 2014-03-19 | 普莱克斯技术有限公司 | 试剂分配装置及输送方法 |
| JP2010278167A (ja) * | 2009-05-28 | 2010-12-09 | Panasonic Corp | 半導体製造装置 |
| US9243325B2 (en) * | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
-
2011
- 2011-05-24 US US13/114,794 patent/US8997775B2/en active Active
-
2012
- 2012-05-02 EP EP12166468.4A patent/EP2527490B1/en active Active
- 2012-05-02 JP JP2012105228A patent/JP6008563B2/ja active Active
- 2012-05-04 TW TW101115943A patent/TWI553147B/zh active
- 2012-05-22 KR KR1020120054018A patent/KR101447922B1/ko active Active
- 2012-05-23 CN CN201210164827.7A patent/CN102794136B/zh active Active
-
2015
- 2015-02-27 US US14/633,267 patent/US9416452B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040007180A1 (en) * | 2002-07-10 | 2004-01-15 | Tokyo Electron Limited | Film-formation apparatus and source supplying apparatus therefor, gas concentration measuring method |
| KR20100108304A (ko) * | 2009-03-27 | 2010-10-06 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. | 방법 및 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102794136A (zh) | 2012-11-28 |
| TWI553147B (zh) | 2016-10-11 |
| EP2527490A1 (en) | 2012-11-28 |
| US9416452B2 (en) | 2016-08-16 |
| TW201305381A (zh) | 2013-02-01 |
| JP2012244168A (ja) | 2012-12-10 |
| KR20120132364A (ko) | 2012-12-05 |
| JP6008563B2 (ja) | 2016-10-19 |
| CN102794136B (zh) | 2014-10-15 |
| US20120298040A1 (en) | 2012-11-29 |
| EP2527490B1 (en) | 2016-07-13 |
| US20150167172A1 (en) | 2015-06-18 |
| US8997775B2 (en) | 2015-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101447921B1 (ko) | 증기 전달 장치, 이의 제조 방법 및 사용 방법 | |
| KR101447922B1 (ko) | 증기 전달 장치, 이의 제조 방법 및 사용 방법 | |
| US11680318B2 (en) | Vapor delivery device, methods of manufacture and methods of use thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-3-3-R10-R13-asn-PN2301 St.27 status event code: A-3-3-R10-R11-asn-PN2301 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20180903 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20190829 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 8 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| PN2301 | Change of applicant |
St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 12 |