KR101513606B1 - Slurry composition - Google Patents

Abstract

The present invention relates to a slurry composition. According to the present invention, the slurry composition has high viscosity at low sheer stress. Therefore, fluidity of the slurry composition is reduced so that a large amount of the slurry composition, participating in abrasion, can be uniformly distribute between a pad and a wafer. Therefore, the slurry composition can have excellent capability of removing steps and an excellent abrasion profile. Moreover, viscosity of the slurry composition is reduced as sheer stress is increased. Accordingly, induction of the slurry composition is increased so that the slurry composition can have excellent performance against flaws and scratches. The slurry composition includes: abrasion particles, an amino acid-based dispersant, nonionic compounds, and ammonium compounds.

Description

Slurry composition {SLURRY COMPOSITION}

The present invention relates to a slurry composition.

Layered wiring structure is required in accordance with the high performance and high integration of semiconductor devices. Such a multi-layer wiring structure is formed by progressing the film forming process and the etching process of the conductive film and the insulating film several times and forms a certain pattern required in each layer A surface planarization process is performed to facilitate a subsequent lithography process. Local planarization and global planarization are examples of this type of planarization, but the ultimate goal of planarization technology is realization of global planarization. Processes for realizing planarization include etch back, reflow, chemical mechanical polishing (CMP) and the like, but methods applicable to wide area planarization and highly integrated circuits include chemical Mechanical polishing processes are the most used. This is because not only the global planarization is possible by the chemical mechanical polishing process but also the chemical mechanical polishing process is the best in terms of satisfaction with flatness.

In the case of a slurry composition to which a general anionic polymer dispersant is applied, the initial viscosity at low shear force is low and there is little change in viscosity as the shear force increases. Has a low step removal capability, and has a center under-shaped polishing profile.

DISCLOSURE OF THE INVENTION The present invention has been made in order to solve the problems described above, and it is an object of the present invention to provide a slurry composition which has a high viscosity at low shear force and a high shear force of a slurry composition, To a slurry composition capable of eliminating high initial stiffness prior to polishing.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to a first aspect of the present invention, there is provided a polishing pad comprising: abrasive grains; Amino acid dispersants; Nonionic compounds; And an ammonium compound.

Wherein the abrasive particles comprise at least one selected from the group consisting of the metal oxide coated with a metal oxide, an organic or inorganic material, and the metal oxide in a colloidal state, and the metal oxide is at least one selected from the group consisting of ceria, silica, zirconia, alumina , At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.

The abrasive grains may include primary particles having a particle diameter of 10 nm to 100 nm and secondary particles having a particle diameter of 30 nm to 200 nm.

The abrasive grains may be 0.1 to 5.0 wt% of the slurry composition.

The amino acid dispersant may be selected from the group consisting of amino butyric acid, serine, glutamine, betaine, proline, pyroglutamic acid arginine, pyridinecarboxylic acid pyridine carboxylic acid, polyethyleneglycol amino ether acetatic acid, asparagine, aspartic acid, cysteine, glycine, histidine, At least one selected from the group consisting of isoleucine, lysine, phenylalanine, tyrosine and valine may be included.

The amino acid-based dispersant may be 0.01 to 5.0% by weight of the slurry composition.

The nonionic compound may be one comprising a polyethylene glycol derivative or a polyhydric alcohol derivative.

Wherein the polyethylene glycol derivative is at least one selected from the group consisting of polyethylene glycol-methacrylate, polyethylene glycol-maleimide, polyethylene glycol-vinylsulfone, polyethylene glycol-chiol, polyethylene glycol-hydroxysuccinimidyl ester, polyethylene glycol-aldehyde, polyethylene glycol-propionaldehyde, At least one selected from the group consisting of polyethylene glycol-butylaldehyde, polyethylene glycol-nitrophenyl carbonate, polyethylene glycol-isocyanate, polyethylene glycol-epoxide, polyethylene glycol-tresylate, and polyethylene glycol-oxycarbonylamidazole . ≪ / RTI >

Wherein the polyhydric alcohol derivative is selected from the group consisting of polyvinyl alcohol, cellulose, sorbitol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol diethyl At least one selected from the group consisting of ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, glycerin monomethyl ether, glycerin dimethyl ether, glycidyl ethyl ether and glycerin triethyl ether May include.

Wherein the nonionic compound includes at least any one selected from the group consisting of polyethylene glycol, polypropylene glycol, polyethylene glycol-polypropylene glycol copolymer, polybutylene glycol, and polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer Lt; / RTI >

The nonionic compound may be 0.5 to 10.0 wt% of the slurry composition.

The ammonium compound is preferably selected from the group consisting of ammonium nitrate, ammonium formate, ammonium citrate, ammonium acetate, ammonium benzoate, ammonium bromide, ammonium carbonate, ammonium chloride, ammonium chromate, ammonium dichromate, ammonium oxalate, ammonium sulfamate, , At least one selected from the group consisting of ammonium sulfite, ammonium tartrate, ammonium tetrafluoroborate, ammonium thiocyanate, ammonium thiosulfate, and ammonium ascorbate.

The ammonium compound may be 0.001 to 1.0 wt% of the slurry composition.

The viscosity of the slurry composition may be such that the viscosity at a shear force of 10 s ^-1 or less is 110% to 400% of the saturated viscosity at a shear force of 200 s ^-1 or higher.

The viscosity of the slurry composition may be 130 to 400% of the viscosity at a shear force of 8 s < ^-1 > or less versus a saturated viscosity at a shear force of 200 s < ^-1 >

The viscosity of the slurry composition may be such that the viscosity at a shear force of 6 s ^-1 or lower is 150 to 400% of the viscosity at a shear force of 200 s ^-1 .

It may be that the high-end difference region polishing rate is 5,000 Å / min or more.

The low-end-portion-region polishing rate may be 1,000 Å / min or less.

The polishing selectivity ratio between the high-tractive area and the low-tractive area may be 4.0 or more.

The pH of the slurry composition may be 6.0 to 6.5.

The slurry composition according to the present invention has a high viscosity at low shear force, so that the fluidity of the slurry composition is lowered and the slurry composition that can participate in the polishing between the pad and the wafer is more than the existing slurry composition and is distributed evenly, Lt; / RTI > Also, as the shear force increases, the slurry composition exhibits a low viscosity, and therefore, the slurry composition has high inductivity, thereby exhibiting excellent performance in defects and scratches.

1 is a view showing six patterns of pattern density (100/50), (100/100), (100/300), (300/50), (300/100) and (300/300).
2 is a graph showing the viscosity of the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2 according to the shear force of the present invention.
3 is a graph showing the results of pattern wafer polishing evaluation using the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2 of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

Throughout the specification, when an element is referred to as "comprising ", it means that it can include other elements as well, without excluding other elements unless specifically stated otherwise.

Hereinafter, the slurry composition of the present invention will be specifically described with reference to examples and drawings. However, the present invention is not limited to these embodiments and drawings.

According to a first aspect of the present invention, there is provided a polishing pad comprising: abrasive grains; Amino acid dispersants; Nonionic compounds; And an ammonium compound.

Wherein the abrasive particles comprise at least one selected from the group consisting of the metal oxide coated with a metal oxide, an organic or inorganic material, and the metal oxide in a colloidal state, and the metal oxide is selected from the group consisting of silica, ceria, zirconia, alumina , At least one selected from the group consisting of titania, barium titania, germania, manganese, and magnesia.

The abrasive grains may be prepared by a solid phase method or a liquid phase method.

The abrasive grains may include primary particles having a particle diameter of 10 nm to 100 nm and secondary particles having a particle diameter of 30 nm to 200 nm. The primary particle size of the slurry composition should be 100 nm or less in order to ensure uniformity of particles because it is synthesized in a liquid phase, and if it is less than 10 nm, the polishing rate is decreased. When the size of the secondary particles in the slurry composition is less than 30 nm, if the particles are excessively small due to milling, deterioration is reduced and excess defects are generated on the surface of the wafer. There is a fear of surface defects such as scratches. Preferably from 50 to 150 nm, more preferably from 80 to 130 nm.

The abrasive grains may be 0.1 to 5.0 wt% of the slurry composition. When the content of the abrasive grains is less than 0.1% by weight in the slurry composition, the film to be polished can not be sufficiently polished at the time of polishing, and the polishing selectivity is lowered to lower the planarization rate. When the content exceeds 5.0% There is a possibility of causing the problem.

The amino acid dispersant may be selected from the group consisting of amino butyric acid, serine, glutamine, betaine, proline, pyroglutamic acid arginine, pyridinecarboxylic acid pyridine carboxylic acid, polyethyleneglycol amino ether acetatic acid, asparagine, aspartic acid, cysteine, glycine, histidine, At least one selected from the group consisting of isoleucine, lysine, phenylalanine, tyrosine and valine may be included.

The amino acid-based dispersant may be 0.01 to 5.0% by weight of the slurry composition. When the content of the amino acid dispersant is less than 0.01% by weight, the polishing rate of the slurry composition adsorbed on the polishing surface is decreased, and when the content of the amino acid dispersant exceeds 5.0% by weight, , The dispersion stability is decreased and aggregation occurs, thereby causing micro scratches and defects.

The nonionic compound may be one comprising a polyethylene glycol derivative or a polyhydric alcohol derivative.

The nonionic compound may be at least one selected from the group consisting of polyethylene glycol (PEG), polypropylene glycol (PPG), polyethylene glycol-polypropylene glycol copolymer (PEG-PPG copolymer), polybutylene glycol (PBG), and polyethylene glycol-polypropylene glycol- And a glycol copolymer (PEG-PPG-PEG copolymer).

Wherein the polyethylene glycol derivative is at least one selected from the group consisting of polyethylene glycol-methacrylate, polyethylene glycol-maleimide, polyethylene glycol-vinylsulfone, polyethylene glycol-chiol, polyethylene glycol-hydroxysuccinimidyl ester, polyethylene glycol-aldehyde, polyethylene glycol-propionaldehyde, At least one selected from the group consisting of polyethylene glycol-butylaldehyde, polyethylene glycol-nitrophenyl carbonate, polyethylene glycol-isocyanate, polyethylene glycol-epoxide, polyethylene glycol-tresylate, and polyethylene glycol-oxycarbonylamidazole . ≪ / RTI >

Wherein the polyhydric alcohol derivative is selected from the group consisting of polyvinyl alcohol, cellulose, sorbitol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol diethyl At least one selected from the group consisting of ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, glycerin monomethyl ether, glycerin dimethyl ether, glycidyl ethyl ether and glycerin triethyl ether May include.

The nonionic compound may have a hydrophilic lipophilic balance (HLB) value of 6 to 13. When the HLB value is 6 or less, the water solubility is lowered and the dispersion stability of the slurry composition is deteriorated. When the HLB value is more than 13, a large amount of bubbles are generated to lower the dispersion stability of the slurry composition.

The nonionic compound may be 0.5 to 10.0 wt% of the slurry composition. If the content of the nonionic polymer is less than 0.5% by weight, dispersion stability may deteriorate. If the content of the nonionic polymer is more than 10.0% by weight, the viscosity of the slurry composition may increase.

In addition to the polymer dispersant, the nonionic compound may have a hydrophilic moiety that does not ionize hydrophilic moieties, and may add a low molecular weight moiety such as an alkyl glycol.

Since the nonionic compound is electrically neutral, it is less susceptible to the presence of the electrolyte, so that it has less area due to pH, and is excellent in dispersion stability in the acidic region.

The slurry composition may further comprise a water-soluble nonionic dispersant. The water-soluble nonionic dispersant may be at least one selected from the group consisting of polyethylene oxide, polypropylene oxide, and polyethylene oxide-propylene oxide copolymer, and the water-soluble nonionic dispersant may further include Can be used. The water-soluble nonionic dispersant may be 0.1 to 2.0 wt% of the slurry composition.

The slurry composition may contain an ammonium compound to increase the dispersion stability and the polishing rate of the abrasive grains. The ammonium compound may be, for example, ammonium nitrate, ammonium formate, ammonium citrate, ammonium acetate, ammonium benzoate, ammonium bromide, ammonium carbonate, ammonium chloride, ammonium chromate, ammonium dichromate, ammonium oxalate, And at least one selected from the group consisting of mate, ammonium sulfate, ammonium sulfite, ammonium tartrate, ammonium tetrafluoroborate, ammonium thiocyanate, ammonium thiosulfate, and ammonium ascorbate.

The ammonium compound may be 0.001 to 1.0 wt% of the slurry composition. If the amount of the ammonium compound is less than 0.001 wt%, the dispersion stability of the slurry composition is not affected. If the amount of the ammonium compound is more than 1.0 wt%, the electric double layer of the abrasive particles in the slurry composition is drastically reduced, .

The ammonium compound may increase the steric hindrance effect of the nonionic compound due to its high conductivity.

When the slurry composition has a shear force of 10 s ^-1 or lower, the viscosity is 0.0012 to 0.004 pa · s. When the shear force of the slurry composition is 8 s ^-1 or lower, the viscosity is 0.0013 to 0.004 pa · s, preferably 0.0017 to 0.004 pa S, and when the shear force of the slurry composition is 6 s ^-1 or less, the viscosity may be 0.0015 to 0.004 pa · s, preferably 0.002 to 0.004 pa · s.
The viscosity range according to the shear force of the slurry composition may be from 110% to 400% of the saturated viscosity at a shear force of not more than 10 s ^-1 at a shear force of 200 s ^-1 or more, , The viscosity at a shear force of 8 s ^-1 or lower may be 130 to 400%, preferably 150 to 400% of a saturated viscosity at a shear force of 200 s ^-1 or higher, and a shear force of 6 s ^-1 or lower The viscosity may be 150 to 400%, preferably 200 to 400% of the saturated viscosity at a shear force of 200 s < ^-1 > or more.
2, the viscosity value of the slurry composition according to the present invention shows a value that the shear force is sufficiently high so that the viscosity value converges, for example, when the shear force is 200 s ^-1 As a result, the shear force may be increased to 110% at a low viscosity of 10 s ^-1 , to 400% at a high shear force, and to 130% at a low viscosity, to 400% at a shear force of 8 s ^-1 And the viscosity may be as high as 150% and as high as 400% when the shear force is in the range of 6 s < ^-1 >. That is, it exhibits a property that the viscosity is greatly improved under a low shear force condition.

The initial step difference removing polishing slurry may have a high end difference area polishing rate of 5000 A / min or more and a low end difference area polishing rate of 1000 A / min or less.

The high stage difference region and the low stage difference region may have a step height of 1000 Å or more based on the low stage region, and the high stage region and the low stage region may have a ratio of 1:10 to 1: 2.

The high-stage difference region may be a portion having a step difference of 7000A or more with respect to the reference plane of the flat wafer, and the low-step difference region may be a portion having a step difference of 2000A or less with respect to the reference plane of the flat wafer. However, the present invention is not limited thereto.

Herein, the reference plane of the flat wafer refers to the uppermost layer before the layer to be polished is formed.

The polishing selectivity ratio between the high-tractive area and the low-tractive area may be 4.0 or more.

According to one aspect of the present invention, the average polishing selectivity ratio of the high-end region and the low-end region of the polishing to the pattern having the pattern density of 25 to 85% may be 4.0 or more.

The pattern density represents a line / space. As shown in FIG. 1, the pattern density is (100/50), (100/100), (100/300), (300/50) / 100) and (300/300), but the present invention is not limited thereto.

The non-standard deviation of the polishing selection between the high-stage region and the low-stage region may be 10 or less.

During polishing of the wafer, the thickness deviation of the center and the edge of the wafer may be 500 ANGSTROM or less. That is, the uniformity in the polishing process for the entire wafer is improved. The wafer polishing may be carried out using, for example, six patterns of pattern density (100/50), (100/100), (100/300), (300/50), (300/100) In the case of wafer polishing, the polishing surface can be flat regardless of the center or edge of the wafer. That is, a conventional center under type polishing surface may not be formed.

When polishing the wafer, the difference in polishing rate between the center of the wafer and the edge may be 1000 Å / min or less.

The pH of the slurry composition may be 6.0 to 6.5. The slurry composition may be prepared by mixing the slurry composition with at least one of nitric acid (HNO ₃ ), hydrochloric acid (HCl), sulfuric acid (H ₂ SO ₄ ), phosphoric acid (H ₃ PO ₄ ), ammonium hydroxide (NH ₄ OH), potassium hydroxide (KOH) The pH may be adjusted by using at least one pH adjusting agent selected from the group consisting of tetramethylamine hydroxide (TMAH) and tetramethylamine (TMA).

The slurry composition according to the present invention is a slurry composition which imparts a viscosity to a slurry composition to increase a polishing contact surface of the slurry composition between a pad and a polishing layer in a CMP process so that a high polishing rate can be obtained in the initial step removal, And the viscosity of the slurry is lowered as the polishing progresses, so that occurrence of defects and scratches can be suppressed.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[ Example  One]

3 weight% of aminobutyric acid as an amino acid dispersant was added to 5000 g of an aqueous solution containing 5% by weight of ceria abrasive particles prepared by a liquid phase method, 1 weight% of polyethylene glycol as a nonionic compound and 1 weight% of ammonium nitrate as an ammonium compound, Was added. Then, they were mixed using a high speed mixer for 30 minutes. The mixture was then filtered to produce a ceria slurry composition.

[ Example  2]

A ceria slurry composition was prepared in the same manner as in Example 1 except that 2 wt% of amino butyric acid was added.

[ Example  3]

A ceria slurry composition was prepared in the same manner as in Example 1 except that 1 wt% of amino butyric acid was added.

[ Comparative Example  One]

A ceria slurry composition was prepared in the same manner as in Example 1 except that 3 wt% of citric acid was added as an anionic monomolecular dispersant.

[ Comparative Example  2]

A ceria slurry composition was prepared by titrating acetic acid to 3 wt% of polyacrylic acid as an anionic polymer dispersant in 5000 g of an aqueous solution containing 5 wt% of ceria abrasive grains prepared by the liquid phase method.

The Z-average particle size and pH of the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2, as measured using a Malvern Zeta-Sizer, are shown in Table 1 below.

Particle size pH Example 1 132 nm 6.4 Example 2 133 nm 6.5 Example 3 131 nm 6.4 Comparative Example 1 134 nm 6.8 Comparative Example 2 136 nm 6.9

[CMP evaluation]

Using the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2, CMP evaluation was carried out under the following conditions.

 1. Grinder: UNIPLA 231 (Doosan Mechatech)

 2. Pad: IC1010 (Rohm & Hass)

 3. Polishing time: 45 s (pattern density 100/300 pattern wafer)

 4. Platen RPM: 24

 5. Head RPM (Head RPM): 90

 6. Flow rate: 200 ml / min

 7. Wafers used: 8 inch ILD pattern wafer (HDP) / step 5000 Å

8. Pressure: 5.0 psi

2 is a graph showing the viscosity of the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2 according to the shear force of the present invention. It can be seen that the slurry compositions of Examples 1 to 3 have higher viscosity at low shear force than Comparative Examples 1 and 2.

3 is a graph showing the results of pattern wafer polishing evaluation using the slurry compositions of Examples 1 to 3 and Comparative Examples 1 and 2 of the present invention. As can be seen from FIG. 3, the polishing rates of Examples 1 to 3 are the average polishing rates of the entire wafer of 5500 angstroms or more. It can be seen that Comparative Example 1 also has a high polishing rate, but the uniformity is not constant and the step removal is not excellent.

In the polishing process, the viscosity of the slurry is high in the low velocity region before the RPM of the wafer head (Wafer Head) and the RPM of the platen reaches the set value, so that the adsorption is good on the pad. Accordingly, it can be seen that the adsorption of the slurry composition is well performed, and therefore, it has excellent step removal ability and polishing profile. When the RPM set value of the wafer head and the platen is reached, the viscosity of the slurry composition is lowered and maintained constant, and thus it is found that the slurry has excellent characteristics in defects and scratches.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the equivalents of the claims, as well as the claims.

Claims (20)

Abrasive particles;
Amino acid dispersants;
Nonionic compounds; And
Ammonium compounds;
/ RTI >
The shear viscosity of 10 s ^-1 or less to the shearing force 200 s 110% to 400% compared to the saturation viscosity of from ^-1 or more in,
Slurry composition.
The method according to claim 1,
Wherein the abrasive particles comprise at least one selected from the group consisting of the metal oxide coated with a metal oxide, an organic substance or an inorganic substance, and the metal oxide in a colloidal state,
Wherein the metal oxide comprises at least any one selected from the group consisting of ceria, silica, zirconia, alumina, titania, barium titania, germania, manganese and magnesia.
The method according to claim 1,
Wherein the abrasive particles comprise primary particles having a particle diameter of 10 nm to 100 nm and secondary particles having a particle diameter of 30 nm to 200 nm.
The method according to claim 1,
Wherein the abrasive grains are 0.1 to 5.0 wt% of the slurry composition.
The method according to claim 1,
The amino acid dispersant may be selected from the group consisting of amino butyric acid, serine, glutamine, betaine, proline, pyroglutamic acid arginine, pyridinecarboxylic acid pyridine carboxylic acid, polyethyleneglycol amino ether acetatic acid, asparagine, aspartic acid, cysteine, glycine, histidine, Wherein the slurry composition comprises at least one selected from the group consisting of Isoleucine, Lysine, Phenylalanine, Tyrosine and Valine.
The method according to claim 1,
Wherein the amino acid-based dispersant is 0.01 to 5.0% by weight of the slurry composition.
The method according to claim 1,
Wherein the nonionic compound comprises a polyethylene glycol derivative or a polyhydric alcohol derivative.
8. The method of claim 7,
Wherein the polyethylene glycol derivative is at least one selected from the group consisting of polyethylene glycol-methacrylate, polyethylene glycol-maleimide, polyethylene glycol-vinylsulfone, polyethylene glycol-chiol, polyethylene glycol-hydroxysuccinimidyl ester, polyethylene glycol-aldehyde, polyethylene glycol-propionaldehyde, At least one selected from the group consisting of polyethylene glycol-butylaldehyde, polyethylene glycol-nitrophenyl carbonate, polyethylene glycol-isocyanate, polyethylene glycol-epoxide, polyethylene glycol-tresylate, and polyethylene glycol-oxycarbonylamidazole ≪ / RTI >
8. The method of claim 7,
Wherein the polyhydric alcohol derivative is selected from the group consisting of polyvinyl alcohol, cellulose, sorbitol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol diethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, diethylene glycol diethyl At least one selected from the group consisting of ether, diethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, glycerin monomethyl ether, glycerin dimethyl ether, glycidyl ethyl ether and glycerin triethyl ether ≪ / RTI >
The method according to claim 1,
Wherein the nonionic compound includes at least any one selected from the group consisting of polyethylene glycol, polypropylene glycol, polyethylene glycol-polypropylene glycol copolymer, polybutylene glycol, and polyethylene glycol-polypropylene glycol-polyethylene glycol copolymer ≪ / RTI >
The method according to claim 1,
Wherein the nonionic compound is 0.5 to 10.0 wt% of the slurry composition.
The method according to claim 1,
The ammonium compound is preferably selected from the group consisting of ammonium nitrate, ammonium formate, ammonium citrate, ammonium acetate, ammonium benzoate, ammonium bromide, ammonium carbonate, ammonium chloride, ammonium chromate, ammonium dichromate, ammonium oxalate, ammonium sulfamate, , At least one selected from the group consisting of ammonium sulfite, ammonium tartrate, ammonium tetrafluoroborate, ammonium thiocyanate, ammonium thiosulfate, and ammonium ascorbate.
The method according to claim 1,
Wherein the ammonium compound is 0.001 to 1.0 wt% of the slurry composition.
delete The method according to claim 1,
Wherein the viscosity of the slurry composition is such that the shear force at a shear force of 8 s < ^-1 > is 130 to 400% relative to the saturated viscosity at a shear force of 200 s < ^-1 >
The method according to claim 1,
Wherein the viscosity of the slurry composition is such that the shear force at a shear force of 6 s < ^-1 > is 150 to 400% relative to the saturated viscosity at a shear force of at least 200 s < ^{-1 &} gt ;.
The method according to claim 1,
Lt; / RTI > min / min. ≪ / RTI >
The method according to claim 1,
Lt; RTI ID = 0.0 > A / min. ≪ / RTI >
The method according to claim 1,
Wherein the polishing selectivity ratio of the high-tractive area and the low-tractive area is 4.0 or more.
The method according to claim 1,
Wherein the slurry composition has a pH of 6.0 to 6.5.

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