KR101635085B1 - Thin film deposition apparatus - Google Patents

Abstract

The present invention relates to a thin film deposition apparatus capable of implementing both an atomic layer deposition method and a chemical vapor deposition method. A thin film deposition apparatus according to the present invention includes a chamber having a space in which a deposition process is performed on a substrate, a susceptor rotatably installed in a space of the chamber, a susceptor on which a plurality of substrates are placed, A plurality of N 2 gas discharge nozzles connected to the N gas supply pipes respectively supplied with the gas of the N 2 gas supply sources and having N valves for controlling supply and interruption of the gas supplied to the gas supply pipes, A plurality of purge gas injectors connected to a purge gas supply pipe provided with a purge valve for controlling supply and blocking of the supplied purge gas and disposed between the source gas injectors, , Chemical vapor deposition (CVD), atomic layer deposition (ALD), and atomic layer deposition Such method the thin film is deposited on the substrate which on one way of how a thin film is deposited, and a controller that controls the N number of valves and purge valves.

Showerhead, thin film, double showerhead, atomic layer deposition, chemical vapor deposition

Description

[0001] The present invention relates to a thin film deposition apparatus,

The present invention relates to a thin film deposition apparatus for depositing a thin film by spraying a source gas and a reactive gas onto a substrate.

The semiconductor manufacturing process includes a deposition process for depositing a thin film on a wafer or a substrate. The apparatus for performing the deposition process includes an atomic layer deposition apparatus and a chemical vapor deposition apparatus.

The atomic layer deposition apparatus is an apparatus for depositing a thin film by sequentially injecting a source gas, a purge gas, a reactive gas, and a purge gas onto a substrate (wafer). Such an atomic layer deposition apparatus has an advantage that a thin film can be uniformly deposited on a substrate, but the film deposition rate is relatively low.

The chemical vapor deposition apparatus is a device in which a source gas and a reactive gas are injected together on a substrate, and the two source gases are deposited on the substrate while reacting. Such a chemical vapor deposition apparatus has a higher film deposition rate than an atomic layer deposition apparatus, but has a relatively low uniformity of the deposited film.

However, since the conventional shower head of the atomic layer deposition apparatus (revovolve type) is composed of a plurality of single showerheads, the chemical vapor deposition method can not be realized. In contrast, since the shower head of the conventional chemical vapor deposition apparatus is composed of one double showerhead, atomic layer deposition can not be realized. That is, the conventional deposition apparatus can realize only one deposition method. Therefore, in order to use both the chemical vapor deposition method and the atomic layer deposition method, there is a problem that two devices must be separately manufactured.

It is an object of the present invention to provide a thin film deposition apparatus capable of realizing both an atomic layer deposition method and a chemical vapor deposition method.

According to an aspect of the present invention, there is provided a thin film deposition apparatus including: a chamber having a space in which a deposition process is performed on a substrate; a chamber rotatably installed in a space of the chamber, A susceptor and N valves connected to the N gas supply pipes respectively supplied with N different kinds of gases and controlling N supply and interruption of gas supplied to the gas supply pipes, A plurality of purge gas injectors connected to a purge gas supply pipe provided with a purge valve for controlling supply and cutoff of a purge gas to be supplied and disposed between the source gas injectors, (N) valves, and the purge valve, and is formed by a chemical vapor deposition (CVD) method, an atomic layer deposition method and a control unit for controlling the N valves and the purge valve so that a thin film is deposited on the substrate by any one of a tomic layer deposition (ALD) method and a chemical vapor deposition method after atomic layer deposition .

According to the present invention, in order to deposit a thin film on the substrate by atomic layer deposition using two or more different gases among the N kinds of gases, The plurality of source gas injectors are arranged such that the gas used for thin film deposition is sequentially and repeatedly injected onto the substrate and the purge gas is injected between the injections of gas used for deposition of the thin film, Wherein the control unit controls the supply of the gas to be used for the deposition of the thin film among the N valves of the source gas injector in correspondence with the injection order of the gas used for the thin film deposition, The purge valve is preferably opened.

According to another aspect of the present invention, there is provided a method for manufacturing a thin film deposition apparatus, comprising: depositing a thin film on a substrate by chemical vapor deposition using at least two gases out of the N kinds of gases; It is desirable to open a valve that controls the supply and interruption of the gas used for deposition.

According to the present invention, in the initial stage of the thin film deposition process, in order to deposit a thin film on the substrate by atomic layer deposition using two or more different gases among the N kinds of gases, Wherein the gas used for the deposition of the thin film is sequentially and repeatedly injected onto the substrate while the susceptor is rotating so that the purge gas is sprayed onto the substrate between the injections of the gas used for deposition of the thin film, The plurality of source gas injectors are sequentially associated with the injection sequence of the gas used for deposition of the thin film along the arrangement direction thereof to control the supply and cutoff of the gas used for the thin film deposition among the N valves of the source gas injector The purge valve is opened, and after the initial stage, the N kinds of A valve for controlling supply and interruption of gas used for deposition of the thin film among the N valves provided in the source gas injector is opened so as to deposit a thin film on the substrate by chemical vapor deposition using at least two gases .

According to the present invention having the above-described configuration, both the atomic layer deposition method and the chemical vapor deposition method can be implemented as one apparatus, thereby improving the economical efficiency and the efficiency of the apparatus.

FIG. 1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of the showerhead assembly shown in FIG. 1, FIG. 3 is a sectional view of the raw gas injector shown in FIG. Is a cross-sectional view of the purge gas injector shown in Fig.

1 to 4, a thin film deposition apparatus 1000 according to the present embodiment includes a chamber 500, a susceptor 600, a heater unit 700, a showerhead assembly 300, And a control unit.

Inside the chamber 500, a space portion 501 for performing a deposition process or the like on the substrate is formed. The chamber 500 is formed with a gate 502 through which the substrate is loaded and unloaded for loading / unloading the substrate, and an exhaust passage 503 for exhausting the gas inside the chamber.

The susceptor 600 is formed in a flat plate shape where the substrate is seated, and is coupled to the driving shaft 601 and installed in the space portion 501 so as to be able to move up and down. On the upper surface of the susceptor 600, a plurality of seating portions (not shown) on which the substrates are mounted are formed.

The heater unit 700 is for heating the substrate to the process temperature, and is disposed below the susceptor 600 to heat the substrate.

The showerhead assembly 300 is intended to perform both chemical vapor deposition (CVD) and atomic layer deposition (ALD). To this end, the showerhead assembly 300 includes a plurality of source gas injectors 200a to 200d and a plurality of purge gas injectors 101 to 104. In this embodiment, as shown in FIG. 2, the showerhead assembly is composed of four raw gas injectors 200a to 200d and four purge gas injectors 101 to 104.

The source gas injector is a device for injecting N different kinds of gases toward the substrate. These gases include a source gas, a reaction gas, a precursor containing a metal, and a reducing gas such as H ₂ or NH ₃ Includes gases involved in the deposition process. To this end, N gas feed pipes are connected to the raw material gas injector, and N valves for controlling on / off and flow of the gas supplied to the gas feed pipe are provided for each gas feed pipe. Here, N is a natural number of 2 or more.

In the case of the present embodiment, four raw material gas injectors 200a to 200d are provided, and these four raw material gas injectors 200a to 200d are radially arranged above the susceptor. Two gas supply pipes (N = 2), that is, a first gas supply pipe 201 to which the first gas is supplied and a second gas supply pipe 202 to which the second gas is supplied are connected to each of the source gas injectors. Hereinafter, the structure of the raw material gas injectors 200a to 200d will be described in detail with reference to FIG.

The raw gas injectors 200a to 200d according to the present embodiment include a showerhead main body 240, a partition plate 250, a plurality of injection fins 270, and a power source unit 280.

The shower head body 240 includes an upper plate 210, a lower plate 220, and a bottom plate 230. The upper plate 210 is formed with a first injection ports a of which are connected to a gas supply pipes of the N gas supply pipes and b second injection ports respectively connected to the other b gas supply pipes of the N gas supply pipes Where a + b = N). In the present embodiment, two gas supply pipes are provided. Each of the first inlet 211 and the second inlet 212 is formed to pass through, and a first gas supply pipe 201 is connected to the first inlet 211 And the second gas supply pipe 202 is connected to the second injection port 212. A first valve (2011) for controlling supply and interruption of the first gas is provided in the first gas supply pipe (201), and a second valve (2011) for controlling supply and cutoff of the second gas is provided in the second gas supply pipe (Not shown). A heater 213 is embedded in the upper plate.

The lower plate 220 is formed in an annular shape and is coupled to the lower end of the upper plate 210. This lower plate is grounded. The bottom plate 230 is formed in a plate shape. The bottom plate 230 has a plurality of injection ports formed therein. The injection port includes a plurality of first injection ports 231 and a plurality of second injection ports 232 to which a plurality of injection fins described below are connected. The bottom plate 230 corresponds to the bottom of the shower head body 240 and is coupled to the lower end of the lower plate 220 and disposed inside the lower plate 220. The upper plate 210 and the lower plate 220 The receiving portion 241 is formed. The bottom plate 230 is electrically connected to the bottom plate and is grounded.

The partition plate 250 is formed in a flat plate shape and has a plurality of insertion holes 251 and a flow hole 252 communicating with the second inlet of the upper plate. The partition plate 250 is provided inside the accommodating portion 241 and divides the accommodating portion into a first buffer portion 243 and a second buffer portion 242. The first buffer portion 243 is formed on the upper side of the partition plate 250 and communicates with the first injection port 211. The second buffer part 242 is formed below the partition plate 250 and communicates with the second injection port 212. The partition plate 250 is made of a conductive material so that plasma can be formed inside the accommodating portion 241 as described later.

The partition plate 250 is insulated and supported by the first insulating member 261 and the second insulating member 262. The first insulating member 261 is formed in an annular shape and is coupled to the upper plate 210. The first insulating member 261 is connected to the second injection port 212 of the upper plate and the flow hole 252 of the partition plate And a flow hole is formed through the through hole. The second insulating member 262 is formed in an annular shape and is coupled to the lower plate 220. The second insulating member is formed with a through hole communicating with the flow hole 252 of the partition plate. 3, the partition plate is disposed and supported between the first insulating member 261 and the second insulating member 262 so that the upper plate 210 and the lower plate 220 and the partition plate 250) are mutually insulated.

The ejection pin 270 is for ejecting the first gas supplied to the first buffer unit 243 to the substrate in a state of being separated from the second gas supplied to the second buffer unit 242. One end of the injection fin 260 is connected (inserted) to the insertion hole 251 of the partition plate and the other end of the injection fin is connected to the first injection port 231 (Inserted). The injection pin 270 is made of an insulating material.

The power supply unit 280 applies power to the partition plate 250 to generate plasma in the accommodation unit. In particular, in this embodiment, the power supply unit applies RF power to the partition plate 250. The power supply unit includes an RF rod 281 and an RF connector 282. The RF rod 281 is formed in a bar shape and is inserted through the upper plate 210 and the first insulating member 261 and is connected to the partition plate 250. An insulating member 283 is coupled to the outer circumferential surface of the RF rod 281. RF connector 282 is connected to RF rod 281 and applies RF power to RF rod 281.

Further, a separation plate 290 is further provided inside the shower head body. The separation plate is formed in a flat plate shape, and a plurality of flow holes 291 are formed through the plate. The separation plate is installed in the first buffer unit 243 to divide the first buffer unit into a first space unit 2431 and a second space unit 2432. On both sides of the separator plate 290, support pins 292 for supporting the separator plate are coupled. The first gas introduced through the first inlet 211 is first diffused in the first space 2431 and then flows into the second space 2432 through the flow hole 291 to be uniformly And is injected through the injection pin 270. [ Thus, the first gas is uniformly injected toward the substrate.

Four purge gas injectors (101, 102, 103, 104) are provided and arranged one by one between the raw gas injectors. A purge gas supply pipe 110 for supplying a purge gas is connected to the purge gas injectors 101, 102, 103, and 104, and a purge valve 111 for controlling the supply and blocking of purge gas is provided in the purge gas supply pipe. As shown in FIG. 4, the purge gas injectors 101, 102, 103, and 104 have a single showerhead structure, and a receiving portion 120 in which the supplied purge gas is accommodated is formed therein. The bottom portion 130 of the purge gas injector is formed with a plurality of injection ports 131 through which the supplied purge gas is injected.

A control unit (not shown) may be formed by any one of chemical vapor deposition (CVD), atomic layer deposition (ALD), and atomic layer deposition followed by chemical vapor deposition And controls the first valve 2011, the second valve 2021 and the purge valve 111 so that a thin film is deposited on the substrate. That is, the control unit controls the first valve, the second valve, and the purge valve according to the type of the thin film deposition process to be performed. The valve control of the control unit according to each step will be described below.

First, the case of depositing a thin film by atomic layer deposition will be described. At this time, the source gas is supplied to the first gas supply pipe 201, and the reaction gas is supplied to the second gas supply pipe 202. In order for the thin film to be deposited by atomic layer deposition, the source gas and the reactive gas are sequentially injected repeatedly, but the purge gas must be injected between the source gas and the reactive gas. To this end, the four source gas injectors sequentially correspond to the order of spraying the source gas and the reactive gas along the arrangement direction (circumferential direction). Then, the first source gas injector 200a corresponds to the source gas, the second source gas injector 200b corresponds to the reaction gas, the third source gas injector 200c corresponds to the source gas again, The raw material gas injector 200d corresponds to the reaction gas again. In this state, only the valve that controls the supply and cutoff of the corresponding one of the two valves of the respective raw material gas injectors, that is, the first valve 2011 and the second valve 2021, is opened while the susceptor is rotated, Lt; / RTI > That is, the first valve 2011 of the first and third source gas injectors 200a and 200c is opened, the second valve 2021 is shut off, and the second and third gas injectors 200b and 200d 1 valve 2011 is opened and the second valve 2021 is opened. Then, the purge valve 111 of the purge gas injectors 101 to 104 is opened.

Then, when the substrate passes under the first source gas injector 200a, the source gas is injected into the substrate, and then the purge gas injector 101, the second source gas injector 200b, the purge gas injector 102, The purge gas, the reactive gas, the purge gas, and the source gas are sequentially injected onto the substrate while sequentially passing under the first source gas injector 200c. That is, a source gas, a purge gas, a reactive gas, and a purge gas are sequentially injected into the substrate while the substrate rotates, thereby depositing a thin film on the substrate by atomic layer deposition. At this time, when RF power is applied to the partition plates of the second and fourth source gas injectors 200b and 200d as needed, plasma is generated in the reaction gas supplied to the second buffer unit, thereby improving the deposition rate.

When the thin film is deposited by the chemical vapor deposition method, the first valve 2011 and the second valve 2021 of each of the source gas injectors 200a to 200d are all opened and the third valve 111 of the purge gas injector is opened. Lt; / RTI > Then, the source gas and the reactive gas are injected together with the substrate, whereby a thin film is deposited on the substrate by chemical vapor deposition.

On the other hand, in an initial step in one process, a thin film may be deposited by an atomic layer deposition method, and then a thin film may be deposited by a chemical vapor deposition method. Such a process may be useful in a process of gap-filling a trench or a contact hole.

That is, in the initial stage of the thin film deposition process, that is, in the step of filling the trench portion, the control unit controls the susceptor to rotate so that the first valves of the first and third source gas injectors 200a and 200c are opened and the second The valves are shut off and the first valves of the second and fourth source gas injectors 200b and 200d are shut off and the second valves are opened. Then, the third valve of the purge gas injectors 101 to 104 is opened. Then, a source gas, a purge gas, a reactive gas, and a purge gas are sequentially and repeatedly injected into the substrate, thereby depositing a thin film on the trench portion of the substrate by atomic layer deposition. Therefore, voids (voids) are not generated in the trench portion and are filled.

After the initial stage, that is, after the trench portion is filled, the control unit also opens the second valves of the first and third source gas injectors 200a and 200c, and the second and fourth source gas injectors 200b and 200d The first valve is also opened (i.e., the first valve and the second valve opening of all the raw gas injectors). And the third valve of the purge gas injectors 101 to 104 is shut off. Then, the source gas and the reactive gas are injected together with the substrate, whereby the thin film is rapidly deposited on the substrate by chemical vapor deposition.

As described above, according to this embodiment, by controlling the first valve, the second valve, and the purge valve according to the type of the thin film deposition process, the atomic layer deposition process and the chemical vapor deposition process can be performed by one device. Accordingly, since the atomic layer deposition apparatus and the chemical vapor deposition apparatus are not required to be manufactured as in the conventional art, the manufacturing cost can be reduced.

Further, according to the present embodiment, a chemical vapor deposition method can be implemented after the atomic layer deposition process in one process, so that the thin film can be deposited at a high speed without generating voids in the trench or the contact hole.

FIG. 5 is a plan view of a showerhead assembly according to another embodiment of the present invention, and FIG. 6 is a cross-sectional view of the raw gas injector shown in FIG.

Referring to FIGS. 5 and 6, the showerhead assembly 1300 according to the present embodiment has four raw material gas injectors 1201 to 1204 and four purge gas injectors 1101 to 1104. The four source gas injectors are arranged radially, and one purge gas injector is disposed between the source gas injectors. In the case of this embodiment, the configuration of the purge gas injector is the same as that of the embodiment described above. Hereinafter, the configuration of the raw material gas injector will be described with reference to FIG. 6 and FIG.

In the case of this embodiment, three (N = 3) gas supply pipes 201A, 202A and 203A are connected to the respective raw material gas injectors. For this purpose, two (a = 2) first injection holes 211A and one (b = 1) second injection holes 212A are formed in the upper plate. A first gas supply pipe 201A and a second gas supply pipe 202A are connected to the first injection port 211A and a third gas supply pipe 203A is connected to the second injection port. The first valve 2011A, the second valve 2021A, and the third valve 2031A are installed in the gas supply pipes, respectively.

In the case of this embodiment, however, two gas supply pipes 201A and 202A are connected to the first buffer part through the first inlet 211A for connection of the three gas supply pipes 201A, 202A and 203A, The gas supply pipes 203A may be connected to the second buffer unit through the second inlet 212A. Alternatively, one gas supply pipe may be connected to the first buffer unit and two gas supply pipes may be connected to the second buffer unit . In addition, the showerhead may not be constituted by a double showerhead, but may have a single showerhead structure such as a purge gas injector.

Hereinafter, an embodiment in which a tungsten thin film is deposited using the showerhead assembly 1300 configured as described above will be described. To this end, a reducing gas is supplied to the first gas supply pipe 201A, and hydrogen (H ₂ ) or ammonia (NH ₃ ) is used as the reducing gas. A boron-containing gas is supplied to the second gas supply pipe 202A. Diborane (B ₂ H ₆ ) may be used as the boron-containing gas. A tungsten-containing precursor is supplied to the third gas supply pipe 203A, and tungsten fluoride (WF ₆ ) may be used as the tungsten-containing precursor.

The tungsten thin film deposition process comprises an initial step of forming a tungsten nucleation layer and a step of forming a tungsten thin film.

First, the initial step of forming a tungsten nucleation layer is performed by atomic layer deposition using diborane and tungsten fluoride. To this end, in a state in which the susceptor is rotating, the odd-numbered source gas injectors, that is, the first source gas injector 1201 and the second source gas injector 1203 are opened and the first The valve 2011A and the third valve 2031A are cut off and the third raw material gas injector 1202 and the third valve 2031A of the fourth raw material gas injector 1204 are opened The first valve 2011A and the second valve 2021A are shut off. Then, the purge valve of the purge gas injector is opened. Then, during the rotation of the substrate, the droplet, the purge gas, the tungsten fluoride, and the purge gas are sequentially injected repeatedly onto the substrate, thereby forming a tungsten core layer on the substrate by atomic layer deposition.

After the tungsten nucleation layer is formed to a desired thickness through the initial steps described above, a tungsten thin film is deposited by chemical vapor deposition using tungsten fluoride and hydrogen as a reducing gas. To this end, the first valve 2011A and the third valve 2031A of each material gas injector are opened and the second valve 2021A is shut off. Then, the purge valve of the purge gas injector is shut off. Then, tungsten fluoride and hydrogen are injected together with the substrate yarn to deposit a tungsten thin film on the substrate. At this time, the hydrogen is supplied to the first buffer unit and then to the substrate through the injection pin, and the tungsten fluoride is supplied to the second buffer unit and then sprayed onto the substrate, and then mixed with each other outside the showerhead body. Therefore, hydrogen and tungsten fluoride react with each other in the showerhead body to prevent particles from being generated and accumulated.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation in the embodiment in which said invention is directed. It will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the appended claims.

For example, in the above-described embodiment, the showerhead assembly is composed of four raw gas injectors and four purge gas injectors, but as shown in FIG. 7, the showerhead assembly 300A includes two raw gas injectors and two And a purge gas injector. In addition to this, the number, injection area, and arrangement of the raw gas injector and the purge gas injector may be changed to be optimized in accordance with characteristics of the thin film deposition process.

In this embodiment, the power source unit is connected to generate the plasma in the second buffer unit of the raw material gas injector, and the showerhead body is grounded. However, in order to generate plasma in the first buffer unit, It can also be changed.

1 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention.

2 is a top view of the showerhead assembly shown in FIG.

3 is a cross-sectional view of the raw gas injector shown in Fig.

4 is a cross-sectional view of the purge gas injector shown in Fig.

5 is a plan view of a showerhead assembly according to another embodiment of the present invention.

6 is a cross-sectional view of the raw gas injector shown in Fig.

7 is a plan view of a showerhead assembly according to another embodiment of the present invention.

Description of the Related Art

1000 ... Thin Film Deposition Apparatus 101 ... 104 ... Purge Gas Injector

200a ~ 200d ... Raw gas sprayer 300 ... Shower head assembly

500 ... chamber 600 ... susceptor

700 ... heater part 210 ... upper plate

220 ... lower plate 230 ... bottom plate

240 ... Shower head body 250 ... partition plate

270 ... injection pin 280 ... power source unit

290 ... partition plate

Claims (7)

A chamber in which a space is formed in which a deposition process for the substrate is performed; A susceptor rotatably installed in a space portion of the chamber, on which a plurality of substrates are mounted; And N valves connected to the N gas supply pipes respectively supplied with N kinds of different gases and controlling the supply and cutoff of the gas supplied to the gas supply pipes are arranged radially above the susceptor A plurality of raw material gas injectors; A plurality of purge gas injectors connected to a purge gas supply pipe provided with a purge valve for controlling the supply and shutoff of purge gas to be supplied and disposed between the source gas injectors; And A thin film is deposited by chemical vapor deposition (CVD), atomic layer deposition (ALD), and atomic layer deposition (CVD), which are electrically connected to the N valves and the purge valve And a control unit for controlling the N valves and the purge valve so that a thin film is deposited on the substrate by any one of the methods, (B = N - a) of the N gas supply pipes among the N gas supply pipes to which a gas supply pipes of a (a is a natural number of at least 1 and less than N) ) Gas supply pipes, and a receiving portion in which the gas supplied through the N gas supply pipes are received, and a plurality of first ejection openings and a plurality of second ejection openings are formed through the bottom portion A showerhead main body, a plurality of insertion holes formed in a flat plate shape, a first buffer portion provided in a receiving portion of the shower head body and communicating with the first inlet, and a second buffer portion communicating with the second inlet, A partition plate for partitioning the first buffer unit into a first space unit and a second space unit, a plurality of flow holes formed in the partition plate, and a partition plate provided in the first buffer unit to partition the first buffer unit into a first space unit and a second space unit;And a plurality of injection fins connected at one end to the insertion hole and at the other end to the first injection port. The gas introduced into the first injection port is supplied to the first buffer part, And the gas introduced into the second injection port is supplied to the second buffer unit, and then the gas is injected into the first space through the injection hole, And a second showerhead structure that is injected into the substrate through the second injection port. The method according to claim 1, Wherein, In order to deposit a thin film on the substrate by using atomic layer deposition using two or more different gases among the N kinds of gases, a gas used for the thin film deposition is supplied to the substrate And the purge gas is sprayed onto the substrate between the injections of the gas used for the deposition of the thin film, the plurality of the source gas injectors are arranged in the direction of the arrangement of the gas used for the thin film deposition And the purge valve is opened in correspondence with the injection sequence in order to open only the valve controlling the supply and cutoff of the gas used for the thin film deposition among the N valves of the source gas injector, Film deposition apparatus. The method according to claim 1, Wherein, Wherein the thin film is deposited on the substrate by a chemical vapor deposition method using at least two gases out of the N kinds of gases, Wherein the valve for controlling supply and blocking of the gas used for the thin film deposition is opened among the N valves provided in the source gas injector. The method according to claim 1, Wherein, In the initial stage of the thin film deposition process, in order to deposit a thin film on the substrate by atomic layer deposition using two or more different gases among the N kinds of gases, in a state where the susceptor is rotating, The plurality of source gas injectors are arranged along the arrangement direction so that the gas used for the deposition is sequentially and repeatedly injected onto the substrate and the purge gas is injected onto the substrate between the injections of the gas used for the deposition of the thin film, Wherein the control unit controls the supply of the gas to be used for the deposition of the thin film among the N valves of the source gas injector in correspondence with the injection sequence of the gas used for the thin film deposition, Wherein the valve is open, and after the initial stage, using at least two of the N kinds of gases, Wherein the valve for controlling the supply and blocking of the gas used for the thin film deposition among the N valves provided in the source gas injector is opened so that the thin film is deposited on the substrate by the red evaporation method. 5. The method of claim 4, Each of the source gas injectors is supplied with a first gas supply pipe supplied with a reducing gas and provided with a first valve, a second gas supply pipe supplied with a boron-containing gas and equipped with a second valve, and a tungsten-containing precursor And a third gas supply pipe provided with a third valve, In the initial stage, Wherein the boron-containing gas, the purge gas, the tungsten-containing precursor, and the purge gas are sequentially and repeatedly injected in order to form a tungsten nucleation layer on the substrate by atomic layer deposition using a boron-containing gas and a tungsten- The second valve of the odd-numbered raw material gas injector is opened and the first valve and the third valve are shut off along the arrangement direction, and the third valve of the even-numbered raw material gas injector is opened along the arrangement direction, 1 < / RTI > valve and the second valve are shut off, the purge valve is open, After the initial stage, Wherein the reducing gas and the tungsten-containing precursor are used to deposit a tungsten thin film on the substrate by chemical vapor deposition, Wherein the first valve and the third valve of each of the raw material gas injectors are opened and the second valve is shut off. 6. The method of claim 5, Wherein the boron-containing gas is diborane (B ₂ H ₆ ), the purge gas is hydrogen (H ₂ ) or ammonia (NH ₃ ), and the tungsten-containing precursor is tungsten fluoride (WF ₆ ) Device. delete

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