KR101682881B1 - An plasma generating module and plasma processing apparatus comprising the same - Google Patents

Abstract

The present invention relates to an antenna and a resonance capacitor connected in series with the antenna and configured to vary an impedance to control the output of the antenna, and includes a plurality of antenna units connected in parallel, A plurality of resonance output control units connected in parallel with the antenna unit and including at least one variable element so as to vary the impedance and change the output of the antenna unit; , A compensation circuit including at least one compensation circuit, and a common part having a common part connected to the plurality of antenna parts to transmit RF power and formed of at least one closed loop to which RF power is applied from the power supply part Generating module and a plasma generating device.
According to the present invention, each antenna is provided with a resonance output control unit, so that each antenna can be precisely controlled.
In addition, an additional compensation circuit may be provided in the antenna to minimize the influence on the adjacent antenna according to the individual control of the antenna.
Further, a common unit is additionally provided so that it is possible to stably control each antenna unit individually, and it is possible to uniformly apply the RF power distributed to each of the plurality of antennas.

Description

TECHNICAL FIELD [0001] The present invention relates to a plasma generating module and a plasma processing apparatus including the plasma generating module.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma generating module and a plasma generating device including the plasma generating module, and more particularly, to a plasma generating module and a plasma generating device having a plurality of antenna units divided and arranged according to unit areas.

The plasma processing apparatus refers to an apparatus for processing a substrate using a plasma, and various methods such as vapor deposition, etching, or ion implantation can be used in the substrate processing process.

Such a plasma processing apparatus can be classified into a capacitively coupled plasma generation system and an inductively coupled plasma generation system according to a method of generating a plasma.

In addition, various methods such as a capacitively coupled plasma generation method, an inductively coupled plasma generation method, an ECR plasma generation method, and a microwave plasma generation method may be applied to the plasma processing apparatus according to a method of generating plasma.

Among them, the inductively coupled plasma generation method is similar to that disclosed in Korean Patent Publication No. 10-2012-0070358 in which a high frequency electric power is applied to a high frequency antenna to generate a plasma by an induced magnetic field. Such an inductively coupled plasma generation method has been widely applied to a large area substrate processing. Recently, a technology using a plurality of divided antennas to uniformly generate a plasma according to the position of a large area substrate has been applied.

However, in the related art, uniform RF power can not be applied to the plurality of antennas without consideration of the difference in impedance on the route through which RF power is applied, and in controlling each of the plurality of antennas separately, There is a problem that it can not be precisely controlled.

Further, by changing the current applied to one of the antennas, it affects currents applied to the adjacent antennas, which in turn affects the output of the antenna, so that it is difficult to precisely control the induced magnetic field formed in each zone there was.

Korean Published Patent Application No. 10-2012-0070358 (published on June 29, 2012)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-described problems, and it is an object of the present invention to provide a method and apparatus for applying uniform RF power to a plurality of antennas and minimizing the influence of change in output of any one of the plurality of antennas And a plasma generation module.

Another object of the present invention is to provide a plasma generating module and a plasma generating device including the plasma generating module, which solve the problem that the current applied to the antenna can not be precisely controlled when controlling a plurality of antennas.

In order to achieve the object of the present invention, the present invention provides a radio frequency (RF) power supply apparatus, comprising: a plurality of antennas connected in parallel; a high frequency power supply for supplying a high frequency power to a plurality of antennas; A plurality of resonance output control parts connected in parallel with the plurality of resonance capacitors and the antenna for varying the impedance and adjusting at least one variable element to adjust the output of the antenna, A drain circuit connected in parallel with the antenna, a feedback amplifying circuit configured to feed power of the output terminal of the antenna to an input terminal of the antenna, high frequency electric power is applied from the high frequency electric power source , And is connected to a plurality of antennas to transmit high-frequency power, And a common portion composed of a conductor member on which at least two closed loops are formed.

Meanwhile, the resonant capacitor may be composed of a variable capacitor, and may be connected in series to the front end of the antenna. The antenna may further include a variable capacitor connected in parallel with the antenna and connected in series with the resonance output control unit.

The variable element of the resonance output control unit includes a variable resistor, and the amount of current amplified by the antenna decreases as the resistance value of the variable resistor increases.

Further, the feedback amplifier circuit includes feedback resistors and feedback capacitors connected in series, and the feedback resistor and the feedback capacitor can be configured to be variable so as to adjust the feedback current.

Meanwhile, the common part may be configured as a lattice structure, and may include a connection part connected to the antenna and a path part forming a path for transmitting high frequency power from the high frequency power supply to the connection part.

In addition, the plasma processing apparatus may further include: a chamber in which a process space is formed; a stage provided in the chamber to form a space in which the substrate is seated; a plasma disposed on the stage and generating plasma in the process space; Processing apparatus is provided.

According to the present invention, each antenna is provided with a resonance output control unit, so that each antenna can be precisely controlled.

In addition, an additional compensation circuit may be provided in the antenna to minimize the influence on the adjacent antenna according to the individual control of the antenna.

Further, a common unit is provided, and it is possible to stably control each antenna unit individually, and it is possible to uniformly apply the RF power distributed to each of the plurality of antennas.

1 is a cross-sectional view of a plasma processing apparatus according to an embodiment of the present invention.
FIG. 2 is a bottom view of the antenna mounting portion in FIG. 1. FIG.
3 is a circuit diagram of the first embodiment of the plasma generation module.
4 is a graph showing a current amplified by an antenna.
5 is a graph showing the current amplified by the antenna and the allowable current of the antenna.
6 is a perspective view showing a common part and an antenna of the present invention.
7 is a circuit diagram of another embodiment of the plasma generation module according to the present invention.
8 is a circuit diagram showing a modification of the antenna module of the present invention.
Fig. 9 shows another modification of the antenna module according to the present invention.
Fig. 10 shows another modification of the antenna module according to the present invention.

Hereinafter, a plasma processing apparatus according to an embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the positional relationship of each component is principally described based on the drawings. The drawings may be simplified for simplicity of the description or exaggerated when necessary. Therefore, the present invention is not limited thereto, and it is needless to say that various devices may be added, changed or omitted.

1 is a cross-sectional view of a plasma processing apparatus according to a first embodiment of the present invention. Here, the plasma processing apparatus means an apparatus applied to a process of generating a plasma by using a process gas to process a substrate, and may be a variety of apparatuses such as a substrate deposition apparatus, a substrate etching apparatus, and an ion implantation apparatus.

Although FIG. 1 shows a plasma processing apparatus having a structure adapted to a cluster type, it is noted that the present invention is not limited to this and can be applied to a plasma processing apparatus applied to an in-line type.

1, the plasma processing apparatus according to the present embodiment may include a chamber 10, a stage 40, an antenna mounting unit 20, and a plasma generating module 100.

First, the chamber 10 is formed in a closed structure surrounded by a plurality of wall surfaces, and constitutes the body of the plasma processing apparatus. The interior of the chamber 10 may include a processing space 30 in which a substrate is accommodated and a substrate processing process is performed and an antenna mounting unit 20 in which a plasma generating module 100 to be described later is installed. 1, the antenna mount 20 is disposed on the upper side of the chamber 10, and the process space 30 can be located on the lower side of the antenna mount 20.

Although not shown in FIG. 1, a gate valve (not shown) may be formed at one side of the chamber 10 to allow the substrate to flow into and out of the chamber 10, and a process gas used in the substrate processing process may be introduced into the process space 30 A gas supply unit (not shown) and a gas exhaust unit (not shown) for supplying and externally discharging gas may be provided.

On the other hand, a stage 40 is provided inside the process space 30. As shown in Fig. 1, the stage 40 is configured to support the substrate S, and the substrate S can be processed while being placed on the stage 40. Fig. A bias electrode 50 may be formed on the stage 40 in order to control the distribution of plasma formed on the process space 30 in connection with an external RF power source 60. 1, a temperature adjusting member such as a heater (not shown) may be provided inside the stage 40 to adjust the temperature of the substrate during the substrate processing process.

As described above, the antenna mounting part 20 is provided on the upper side of the stage 40, and forms a space in which the plasma generating module 100 is installed. The antenna mounting portion 20 forms a space partitioned from the process space 30 by at least one window. The window 21 can be supported by a support member 22 provided on the wall surface of the chamber. The window 21 may be formed of a metal material or may be formed of a dielectric material other than a metal material.

The plasma generation module 100 generates an induction electric field inside the process space 30 to generate plasma from the process gas in the process space 30. [ The plasma generation module 100 includes a high frequency power source 110, a plurality of antennas 130, a plurality of resonance output control units 150, a drain circuit 160, a feedback amplifier circuit 170, and a common unit 180 . The RF power supply 110 and the matching unit 120 may be installed outside the chamber and the antenna 130, the resonance output control unit 150 and the common unit 180 may be accommodated in the antenna mounting unit 20 .

Each of the antennas 130 can be evenly dispersed on the upper side of the process space 30 (the inside of the antenna mounting part). Therefore, the distribution of the plasma generated inside the process space 30 during the substrate processing process can be uniformly controlled or precisely controlled for each zone.

FIG. 2 is a bottom view of the antenna mounting portion in FIG. 1. FIG. In the present embodiment, the inner space of the process space 30 can be divided into a plurality of unit areas with respect to a horizontal plane. As shown in an example, the bottom surface of the mounting part 20 is divided into nine rectangular unit areas Structure. Accordingly, the support member 22 of the antenna mounting unit 20 may have a lattice-like structure, and nine windows 21 may be provided to correspond to the divided unit areas. The plurality of antennas 130 are disposed at positions corresponding to the respective windows 21 inside the antenna mounting portion 20 and uniformly arranged in the unit areas so that it is possible to precisely control the unit areas .

In the present embodiment, one antenna 130 is disposed in one unit area. However, the present invention is not limited thereto and a plurality of antennas 130 may be disposed in one unit area Do. In addition, the structure divided into nine unit areas in FIG. 2 is merely an example, and the unit area may be divided into various patterns and the corresponding antenna 130 may be disposed.

 Hereinafter, the plasma generating module 100 according to the present embodiment will be described in detail with reference to FIGS. 3 to 6. FIG.

3 is a circuit diagram showing a configuration of the plasma generation module 100 of FIG.

As described above, the plasma generating module 100 includes a high frequency power source 110, a matching unit 120, an antenna 130, a resonance output control unit 150, a drain circuit 160, a feedback amplifier circuit 170, (180).

Here, the RF power supply 110 generates radiofrequency power and provides the RF power to a plurality of antennas 130. The matching unit 120 may be provided between the high frequency power source 110 and the antenna 130 and may perform impedance matching between the high frequency power source 110 and the antenna 130. The matching unit 120 is composed of a circuit including a variable capacitor or a variable inductor, and performs impedance matching in such a manner as to control the variable capacitor or the variable inductor. However, since the configuration of the high-frequency power source 110 and the matching unit 120 is widely applied, a detailed description thereof will be omitted.

A plurality of antennas 130 are connected in parallel and the front ends of the antennas 130 are common by the common unit 180. A resonant output control unit 150 and a resonant capacitor 140 ). The feedback amplifying circuit 170 is connected in parallel with a circuit including the antenna 130, the resonant capacitor 140, the resonant output control unit 150, and the drain circuit 160.

The antenna 130 is composed of a plurality of RF power sources from the RF power source 110 to form an induction field in the process space 20 of the chamber. The output of the induced electric field can be controlled according to the magnitude of the electric power supplied to the antenna 130. Each of the antennas 130 is configured using elements having a load characteristic and is disposed in each of the divided unit areas of the antenna mounting portion 20. [ One end of the antenna 130 may be connected to the side of the high frequency power source 110 and the other end may be grounded to the side wall of the antenna mount 20 or may be connected to an external ground power through an output terminal. The antenna 130 may have various shapes such as a spiral shape, a concentric circular shape, and a rectilinear shape. If the RF power is applied to form an induction field, the antenna 130 130).

의 조건을 만족할 때, 전류의 증폭이 일어나게 된다. 전술한 식을 만족하는 주파수를 공진주파수라고 하며, L과 C의 관계가 공진주파수와 유사한 값을 갖는 경우에도 전류가 증폭될 수 있다. 특히, 인덕터와 커패시터가 직렬로 연결된 경우 임피던스 값이 최소가 되어 전류가 증폭될 수 있다. 또한 인덕터와 커패시터가 병렬로 연결된 경우, 둘의 조합으로 임피던스 값이 최대가 되어 루프에 인가되는 전류가 작다 하더라도 루프 내부에서 전류가 증폭될 수 있다. 이와 같이, 공진현상을 이용하면 증폭된 전류를 이용할 수 있으므로, 적은 RF파워를 인가하더라도 높은 출력을 얻을 수 있게 된다.The resonant capacitor 140 is a configuration capable of amplifying the current in the antenna 130 by interacting with the antenna 130, as described above. When the frequency of the RF power is w and the inductance of the inductor is L and the value of the capacitor is C,

, The current is amplified. The frequency satisfying the above-described expression is called a resonance frequency, and the current can be amplified even when the relationship between L and C has a value similar to the resonance frequency. In particular, when the inductor and the capacitor are connected in series, the impedance value is minimized and the current can be amplified. Also, when the inductor and the capacitor are connected in parallel, the impedance value is maximized by the combination of the two, so that the current can be amplified in the loop even if the current applied to the loop is small. As described above, since the amplified current can be used by using the resonance phenomenon, a high output can be obtained even when a small amount of RF power is applied.

The resonance capacitor 140 is connected to the antenna 130 to generate a resonance phenomenon to amplify a current. The resonance capacitor 140 is connected to the antenna 130 in series and in parallel to generate a resonance phenomenon. . ≪ / RTI > In addition, the resonance capacitor 140 is constituted by a variable capacitor so as to control the amount of amplification of the current amplified by the antenna by changing the impedance value. On the other hand, since the antenna 130 may also be a resistor, the output can be controlled by reflecting the same.

On the other hand, each of the antennas 130 needs to be controlled so as to have different outputs depending on the distribution of the process gas in the process space 30, the density of the plasma, or the shape of the process space 30 corresponding to the installation position. Therefore, the resonance capacitor 140 is constituted by a variable capacitor so that the current of the antenna 130 can be amplified to a desired magnitude by using the resonance phenomenon described above, and the output of the induction field of the desired region can be controlled. The control of the current will be described in detail with the function of the resonance output control unit 150 to be described below.

The resonance output control unit 150 includes the same number as the antenna 130 and is connected in parallel with the respective antennas 130 and includes at least one variable element. The impedance of the variable element is changed, 130 can be individually varied.

Hereinafter, the functions of the resonance output controller 150 will be described in detail with reference to FIGS. An antenna module is a unit module for generating plasma in one area shown in FIG. 2 for convenience of explanation. The unit module includes an antenna 130, a resonance output controller 150, And may include a drain circuit 160.

로부터 유도되는

를 만족하는 경우의 커패시턴스 값을 의미한다. 공진커패시터(140)의 커패시턴스 값(C)이 Cr주변의 값을 갖는 경우, 안테나(130)에서 공진에 의해 전류의 증폭이 일어나며, 특히 커패시턴스 값(C)이 Cr인 경우 전류가 최대로 증폭된다. 이러한 공진현상을 이용하기 위하여, 공진커패시터(140)의 커패시턴스 제어범위는 Cr을 포함하여 C1에서 C2사이가 되도록 설정하여 일정수준 이상의 증폭된 전류를 이용할 수 있다. 다만, 이러한 C1 및 C2의 값은 안테나(130)의 인덕턴스 값 및 RF전원 등과 밀접하게 관련되어 있으며, 수 pF 일 수 있고, 다양한 값으로 적용될 수 있으므로, 본 실시예에서는 특정한 값을 적용한 예에 대하여는 생략하기로 한다.4 is a graph showing a current amplified by the antenna 130 according to the capacitance value C of the resonant capacitor 140 according to the first embodiment of the present invention. The term " Cr "

Derived from

Is satisfied. ≪ tb >< TABLE > When the capacitance value C of the resonant capacitor 140 has a value around Cr, the current is amplified by resonance in the antenna 130, and particularly when the capacitance value C is Cr, the current is maximally amplified . In order to utilize such a resonance phenomenon, the capacitance control range of the resonance capacitor 140 may be set to be between C1 and C2 including Cr, and an amplified current of a certain level or higher may be used. However, since the values of C1 and C2 are closely related to the inductance value of the antenna 130 and the RF power source, and can be several pF and can be applied to various values, in the present embodiment, It will be omitted.

The antenna 130 can be regarded as an inductor generating an induced electric field, and the inductance value L of the antenna 130 is generally fixed according to a structural characteristic. In general, the RF power source 110 is applied with RF power having a specific frequency, and a specific frequency is determined according to a plasma to be generated. Therefore, the current amplified by the antenna 130 can be controlled by changing the characteristic values of the variable elements of the resonance capacitor 140 and the resonance output controller 150.

Referring to FIG. 4A, the resonance output controller 150 is provided with a variable resistor, and the magnitude of the current according to the change of C value is shown in three cases where the variable resistance value is R1 <R2 <R3. The amount of change of the current with the increase of the C value tends to gradually decrease as the variable resistance value of the resonance output controller 150 increases.

On the other hand, a general variable capacitor 140 may experience an error of 10% or more largely affected by temperature, surrounding electromagnetic fields, and the like. The current value amplified by the operating error may be different. In particular, the amount of the current amplified even in the minute difference of the C value is large in the vicinity of Cr. The magnitude of the amplified current, which varies due to this error, can be several times more different.

However, if the resonance output controller 150 is provided to increase the resistance value of the variable resistor, as shown in the figure, the amount of change of the amount of the amplified current decreases with the change of the C value, The error of the amount of current to be amplified can be reduced.

Since the error range of the current varies depending on the resistance value of the variable resistor provided in the resonance output control unit 150, it is possible to control within the control range (C1 to C2) of the variable capacitor 140 within a proper current error range It is preferable to set it to have a resistance value of an appropriate variable resistance.

Fig. 4 (b) shows a change of current more abrupt than in Fig. 4 (a). This case is a tendency to occur when the L value constituting the resonance circuit is larger than that in Fig. 4 (a). That is, as the L value of the antenna 130 is larger, the current amplified according to the capacitance value C of the resonant capacitor tends to change abruptly around Cr. This tendency is a feature accompanied by an increase in the size of the antenna 130 due to the increase in size of the substrate. Therefore, the control error of the resonant capacitor 140 leads to a problem that the error of the generated current is further increased.

Also in this case, since the resistance value of the variable resistor of the resonance output controller 150 is adjusted to reduce the amount of change of the current amplified by the antenna 130 according to the change of the capacitance value C of the resonance capacitor 140, The current amplified by the antenna 130 can be stably controlled while reducing the error.

The current amplified by the antenna 130 can be finely controlled by changing the capacitance value C of the resonant capacitor 140 and the resistance value of the variable resistor of the resonant output control unit 150. Specifically, first, the resonance capacitor 140 is set to a C value capable of amplifying a desired amount of current, and then a variable resistor of the resonance output controller 150 is appropriately controlled to control a current of a desired magnitude to be applied.

 5 is a diagram showing a change in the current amplified by the antenna 130 and an allowable current Ia of the antenna 130 according to the capacitance value C of the resonant capacitor 140 of the present invention.

In addition, when the capacitance value C of the resonance capacitor 140 becomes Cr corresponding to the frequency (resonance frequency) of the high frequency power, the resonance output controller 150 controls the resonance output controller 150 such that the maximum value of the amplified current becomes the allowable current (Ia) so as not to exceed the resistance (Ia). The amount of current to be amplified decreases as the resistance value of the resonance output control unit 150 increases, so that the current is amplified only below the allowable current Ia of the antenna 130. [

As described above, since the current amplified by the antenna 130 using the resonance phenomenon can be easily amplified several times or more by the error of the C value, even if an error of the current amplified by the antenna 130 occurs So as to prevent the elements such as the antenna 130 and the like from being damaged.

On the other hand, the resonance output control unit 150 may vary the resistance value of the variable resistor, and the phase of the sum of the impedances of the plasma generation module 100 may also be changed. Therefore, it is possible to change the trend of the current amplification amount according to the capacitance value C of the resonance capacitor 140, so that the width for controlling the current can be widened. In this case, the impedance matching in the matching unit 120 can be re-executed.

Referring again to FIG. 3, the drain circuit 160 forms a path for draining a part of the current applied to the antenna. When a plurality of antennas 130 are provided and different currents are to be applied to each antenna 130 according to a process or a user's need, for example, the etching rates of the respective parts are applied differently So that it is possible to drain the instantaneous remaining current to minimize the influence on the other antenna 130.

The drain circuit 160 may include at least one or more variable elements. In this embodiment, a configuration in which a drain variable resistor and a drain capacitor are connected in series is shown. One side of the drain circuit 160 is connected to the ground and drains a part of the current applied to the antenna 130. When the current amplified by the antenna 130 is changed, In order to keep the amount of current applied to the switch SW1 at a constant level. That is, when the sum of the current amplified by the antenna 130 becomes smaller, the drain circuit 160 increases the amount of the drain current by reducing the value of the drain variable resistor. On the contrary, when the sum of the current amplified by the antenna 130 becomes larger, The value of the variable resistor is increased to reduce the amount of drain current. Therefore, the sum of currents applied to the antenna 130 module can be controlled to be maintained at a constant level. As a result, even if the output of each antenna 130 is individually controlled, the total amount of current can be kept constant, and the change in the current applied to the other antenna 130 can be minimized. It becomes easy. The drain circuit 160 may further include a drain capacitor connected in series with a drain variable resistor. The current passing through the antenna 130 is applied to the front end of the antenna 130 by adjusting the impedance in the drain capacitor The function of the feedback compensation circuit can be performed, and the effect of increasing the power efficiency can be obtained. In the present embodiment, only one drain circuit 160 is provided, but a plurality of the drain circuits 160 may be provided in the antenna module.

In addition, an increase in the current due to the resonance in one antenna 130 may affect the current applied to the other antenna 130. At this time, the overloaded current is grounded through the drain circuit 160, ). &Lt; / RTI &gt;

Meanwhile, a power measuring unit (not shown) may be provided, and the drain circuit 160 may be controlled according to the current while being connected to the antenna 130 to monitor the current flowing through the antenna 130. When the temperature of the antenna 130 rises to a predetermined temperature or more, the drain circuit 160 is controlled to control the temperature of the antenna 130 130 in response to the control signal. If a current measuring unit (not shown) or a temperature measuring unit (not shown) is provided, a controller (not shown) may be further provided to control the drain circuit 160 using the measured information.

The feedback amplifier circuit 170 is configured to amplify and reuse the current passing through each antenna 130. The feedback amplifier circuit 170 feeds back the power of the output terminal of the antenna to the input terminal of the antenna and adjusts the phase change Phase shitf to adjust the output amplified by the antenna 130. The feedback amplifier circuit 170 is connected in parallel with the configuration including the antenna 130, the resonance capacitor 140, the resonance output controller 150, and the drain circuit 160. The feedback amplifier circuit 170 includes a feedback resistor and a feedback capacitor, and the feedback resistor and the feedback capacitor are configured as variable elements. This makes it possible to control the variable elements according to the output of the plasma generation module 100, thereby increasing power inefficiency.

Hereinafter, the common unit 180 will be described with reference to FIG.

The common unit 180 connects each antenna and is configured to minimize the influence of the resonance of the adjacent antenna 130 on the output of the other antenna 130. [

6 is a perspective view showing the common part 180 and the antenna 130 of the present invention. The resonance output control unit 150, the drain circuit 160, and the like are omitted in this figure to illustrate the structure and function of the common unit 180.

The common unit 180 is configured to receive RF power from the RF power supply 110 and to be connected to the plurality of antennas 130 to transmit RF power. The common part 180 may be formed of a conductive member having a shape corresponding to the arrangement of the antennas 130 described above.

The common unit 180 forms a common line that is directly connected to each of the antennas 130. When the respective antennas 130 are individually controlled, So that the influence can be minimized. Since the paths from the RF power source 110 to the respective antennas 130 can be connected in the same manner, the deviation of the RF power can be reduced and the RF power can be transmitted from the RF power source 110 to the antenna 130 can be minimized.

The common part 180 may be composed of a conductor member formed with at least one closed loop. The deviation of the RF power applied to each antenna 130 can be minimized by being connected to the respective antennas 130 on the closed loop. The common unit 180 may include a path unit 182 and a connection unit 181. The path portion 182 and the connection portion 181 may be formed in a lattice shape, and the shape of the lattice may be a square or a rectangle. On the other hand, the path portion 182 and the connection portion 181 may be formed of grids of different sizes.

The path unit 182 forms a path for transmitting RF power from the RF power supply 110 to the connection unit 181 and the connection unit 181 is connected to the antenna 130 so as to transmit RF power to the antenna 130 . In addition, the path portion 182 can be configured to apply RF power to a lattice point (collectively referred to as a corner, a branch point, etc.) located at the center. When a plurality of path portions 182 are provided, RF power may be applied to a plurality of central lattice points and may be connected to the RF power supply 110. Specifically, when four path portions 182 are provided as in the present embodiment, RF power may be applied to the central lattice point of each path portion 182.

The connection unit 181 may be disposed at a position corresponding to the antenna 130 and connected to the antenna 130. Referring again to FIG. 6, nine antennas 130 are arranged in a 3x3 form, and nine connection portions 181 are arranged on an upper side thereof, and are connected to the respective antennas 130. FIG. The connection point 181 may be connected to the antenna 130 at a different point depending on the number of conductors included in the antenna 130. For example, when the antenna 130 is composed of a single winding, it may be connected to a central lattice point of the connection portion 181. When the antenna 130 is composed of a plurality of windings, the antenna 130 may be connected to a plurality of lattice points. Specifically, when the antenna 130 is composed of four windings, the grid points and the respective windings may be connected to each other at an outer periphery of the connection portion 181.

In addition, the common part 180 may be formed by combining the path part 182 and the connecting part 181 in various sizes and numbers. 6, when the connecting portion 181 is disposed at a position corresponding to the nine antennas 130, the four corners of the adjacent four connecting portions 181 and the four corners of the path portion 182 Respectively. At this time, the lattice of the path portion 182 may be larger than the lattice of the connection portion 181. That is, the path portions 182 may be arranged in a lattice arrangement between the connection portions 181 arranged in a lattice arrangement.

When the RF power is applied to the central lattice point of the path portion 182, a path through which RF power is applied from the RF power source to each antenna 130, that is, a path from the RF power source 110 to each antenna 130 The distances of the paths can be all made equal. Specifically, the distances from the central lattice point to the respective corners of the path portion 182 are all the same, and the distance from the corner to the central lattice point is also the same. Therefore, the difference between the lengths of the paths from the RF power source 110 to the antenna 130 can be minimized, and the power consumed on each path can be made uniform when RF power is applied. So that uniform RF power can be supplied to the antenna.

Referring again to FIG. 6, the common part 180 is shown as being composed of a planar conductor member. Such a configuration can be installed in a narrow antenna mounting portion, and the accessibility of the user can be secured in maintenance and repair of the device. However, the illustrated example is merely an example, and the common part 180 may be formed of a member having various cross-sectional shapes.

When the common unit 180 is configured as described above, each antenna 130 is formed with a common line that is connected in parallel with the other antenna 130, and RF So that the deviation of the voltage or power of the power can be minimized. The amount of current applied to the entire antenna 130 can be rapidly changed when the capacitor 130 is changed by controlling the antenna 130 individually. However, when all of the antennas 130 are common due to the common unit 180, ), And a sudden change amount of the current can be applied to all the antennas 130 evenly, so that the antenna 130 can be stably controlled individually.

Hereinafter, modifications of the present invention will be described with reference to Figs. 7 to 10. Fig.

7 is a circuit diagram of another embodiment of the plasma generation module 100 according to the present invention. The same elements as those of the first embodiment among the constituent elements included in the present embodiment will not be described in detail in order to avoid redundant description.

The resonance capacitor 140 may be connected in series with the antenna 130 and the resonance output control unit 150 so as to cause a series resonance phenomenon with the antenna 130. [ In the case of the series resonance, since it is easier to control the phase shift, individual control of the output of the antenna 130 is facilitated. At this time, the resonance output control unit 150 is constituted by a variable resistor, connected in parallel with the respective antennas 130, and is configured to vary the impedance and adjust the output of each antenna 130.

8 is a circuit diagram showing a modification of the antenna module of the present invention.

As shown in the figure, the resonance output controller 150 may include a variable element, and may be constituted by a variable resistor as shown in FIG. 8 (a). As shown in FIG. 8 (b) And an inductor, thereby changing the electrical characteristics of the antenna module and changing the amplified output. Also, as shown in Fig. 8 (c), it may be configured to include a variable resistor and a variable inductor. Thus, the output of the antenna 130 can be adjusted by changing the impedance of the resonance output controller 150.

The resonance capacitor 140 may be connected in series to the front end of the antenna 130 and the resonance output control unit 150. The resonance capacitor 140 may be provided at the front end of the antenna module to uniformly distribute the power applied to the antenna module .

Fig. 9 shows another modification of the antenna module according to the present invention.

As shown in the drawing, in this modification, a resonance capacitor 140 connected in series is provided between the antenna 130 and the grounding portion, unlike the modification shown in FIG. It is easy to control the phase change of the applied current, and the output amplified by the antenna can be precisely adjusted. In this case, the resonance output controller 150 may be modified in various ways as described with reference to FIG.

Fig. 10 shows another modification of the antenna module according to the present invention.

As shown in the figure, the antenna module may include a variable capacitor connected in series with the resonance capacitor 140, and the output amplified by the series resonance may be controlled by the resonance output controller 150 to output the output of the antenna 130 Can be precisely controlled.

The plasma processing apparatus including the plurality of antennas 130 includes the resonance output control unit 150 capable of finely controlling the respective antennas 130, A common amplifying circuit 170 that feeds back the total power and a common unit 180 that minimizes the influence on the peripheral antenna 130 during the individual control of each antenna 130 The plasma generation module 100 has been described.

In the case of implementing the plasma generation module 100 according to the present invention, the resonance output control unit 150 is provided to precisely control the plasma, so that the substrate can be finely processed, The antenna 130 can be prevented from being applied to the antenna 130, thereby preventing the device from being damaged.

The antenna 130 is provided with a drain circuit 160 so as to minimize the influence of the antenna 130 on the adjacent antenna 130. The feedback amplification circuit 170 performs feedback amplification of the entire power, There is an effect that the inefficiency of the power supply can be increased.

In addition, since all the antennas 130 are common due to the closed loop of all the antennas 130 and the common unit 180, it is possible to minimize the variation in the magnitude and phase of the RF power applied to each antenna 130 . Therefore, it is possible to transmit uniform RF power to all the antennas 130, thereby generating a uniform plasma, and it is possible to operate the antenna 130 stably even when individually controlling the antenna 130.

Although the embodiments of the present invention have been described in detail, the present invention is not limited to the above embodiments. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the present invention as defined by the appended claims. Leave.

100: Plasma generating module
110: high-frequency power source 120:
130: antenna 140: resonant capacitor
150: Resonance output control section
160: drain circuit
170: Feedback amplifier circuit
180: Common part 181: Connection part 182: Path part

Claims (12)

A plurality of antennas connected in parallel;
A high frequency power supply for supplying high frequency power to the plurality of antennas;
A plurality of resonance capacitors each connected to the antenna and varying impedance to control the antenna output;
A plurality of resonance output control units connected in parallel with the antenna, each of the resonance output control units including at least one variable element for varying an impedance and controlling an output of the antenna;
A drain circuit connected to the antenna and configured to include a path for draining a part of the current applied to the antenna and including at least one variable element;
A feedback amplifying circuit for feeding power of an output terminal of the antenna to an input terminal of the antenna; And
And a common portion connected to the plurality of antennas for transmitting the high frequency power and formed of at least one closed loop, the common portion being connected to the plurality of antennas,
And one side of the drain circuit is connected to the common part. The method according to claim 1,
Wherein the resonant capacitor comprises a variable capacitor. 3. The method of claim 2,
And the resonant capacitor is connected in series to a front end of the antenna. The method of claim 3,
The resonant capacitor includes:
Further comprising a variable capacitor connected in parallel with the antenna and connected in series with the resonance output control unit. 3. The method of claim 2,
Wherein the variable element of the resonance output control section comprises:
And a variable resistor,
And the amount of current amplified by the antenna decreases as the resistance value of the variable resistor increases. 3. The method of claim 2,
Wherein the feedback amplifier circuit comprises:
And a feedback resistor and a feedback capacitor connected in series,
Wherein the feedback resistor and the feedback capacitor are configured to be variable in order to adjust a feedback current.
delete The method according to claim 1,
And the drain circuit includes a drain resistor. 9. The method of claim 8,
And the drain resistor is constituted by a variable resistor. The method according to claim 1,
Wherein the common part has a lattice structure. The method according to claim 1,
The above-
A connection part connected to the antenna, and
And a path unit for forming a path for transmitting the high-frequency power delivered from the high-frequency power supply to the connection unit. A chamber in which a process space is formed;
A stage provided inside the chamber to form a space in which the substrate is seated; And
And a plasma generation module disposed on the stage and generating a plasma in the process space,
The plasma generation module may include a plurality of antennas connected in parallel, a high frequency power supply for supplying high frequency power to the plurality of antennas, a plurality of resonance capacitors controlling impedance of the antenna to be connected to the antenna, A plurality of resonance output control units connected in parallel with the antenna, each of the resonance output control units including at least one variable element for varying the impedance and controlling the output of the antenna, a path for draining a part of the current applied to the antenna A drain circuit connected to the antenna in parallel and configured to include at least one variable element; and a drain circuit connected in parallel with the antenna, the high frequency power being applied from the high frequency power source, the high frequency power being connected to the plurality of antennas, As a conductor member in which one or more closed loops are formed And a control unit for controlling the operation unit,
And one side of the drain circuit is connected to the common part.

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