KR101909190B1 - Apparatus for controlling temperature of substrate, and apparatus for treating substrate comprising the same - Google Patents

Abstract

The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus. A substrate temperature control apparatus according to an embodiment of the present invention includes: a support plate for supporting a substrate; A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region; A power supply for providing power to the plurality of heating units to regulate the temperature of the substrate; A plurality of photoelectric elements connected between the plurality of heating units and the power supply unit; And a controller for controlling the photoelectric elements to regulate electric power supplied to each of the plurality of heating units.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus.

The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus.

There is a need for a substrate temperature control device for controlling the temperature of the substrate during the semiconductor manufacturing process. The conventional substrate temperature control apparatus requires a plurality of RF filters and a control unit corresponding to a plurality of heating units for controlling the temperature of each substrate region.

However, in the case of a substrate having a multi-zone of recent attention, if more than 100 heating units are required and corresponding RF filters and control units are provided, equipment having a much larger installation space than conventional equipment is required do. Increasing the volume of such equipment can be a result of contradicting recent trends in reducing the volume of equipment.

Therefore, there is a need for a technique capable of controlling the temperature of a substrate having a multi-zone by region without increasing the volume of the equipment.

An object of the present invention is to provide a substrate temperature control apparatus and a substrate temperature control method capable of controlling the temperature of a substrate having multi-zones by region without increasing the volume of equipment.

The problems to be solved by the present invention are not limited to the above-mentioned problems. Other technical subjects not mentioned will be apparent to those skilled in the art from the description below.

A substrate temperature control apparatus according to an embodiment of the present invention includes: a support plate for supporting a substrate; A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region; A power supply for providing power to the plurality of heating units to regulate the temperature of the substrate; A plurality of photoelectric elements connected between the plurality of heating units and the power supply unit; And a controller for controlling the photoelectric elements to regulate electric power supplied to each of the plurality of heating units.

In one embodiment, the plurality of optoelectronic devices may comprise phototransistors.

In one embodiment, the control unit may include a plurality of light emitting devices for irradiating light to a plurality of photoelectric elements to control the plurality of photoelectric elements.

In one embodiment, the light emitting device may include a light emitting diode.

In one embodiment, the photoelectric device and the light emitting device may be electrically separated.

In one embodiment, the photoelectric element and the light emitting element may be provided in an insulating layer provided under the support plate.

In one embodiment, the apparatus further includes a sensor unit for measuring temperature distribution information of the substrate, and the controller may determine a light emitting element to be turned on according to the temperature distribution information.

In one embodiment, the power supply unit may further include a filter connected between the power supply unit and the plurality of heating units to block the high-frequency power signal flowing into the power supply unit.

A substrate processing apparatus according to an embodiment of the present invention includes: a chamber having a space for processing a substrate therein; A substrate support assembly located within the chamber and including a support plate for supporting the substrate; A gas supply unit for supplying gas into the chamber; A plasma generating unit including a high frequency power source for providing high frequency power and exciting gas in the chamber into a plasma state; And a substrate temperature control unit for controlling the temperature of the substrate, wherein the substrate temperature control unit comprises: a plurality of heating units installed in different regions of the support plate to control the temperature of the substrate by region; A power supply for providing power to the plurality of heating units to regulate the temperature of the substrate; A plurality of photoelectric elements connected between the plurality of heating units and the power supply unit; And a controller for controlling the photoelectric elements to regulate electric power supplied to each of the plurality of heating units.

In one embodiment, the plurality of optoelectronic devices may comprise phototransistors.

In one embodiment, the control unit may include a plurality of light emitting devices for irradiating light to the plurality of photoelectric elements to control the plurality of photoelectric elements.

In one embodiment, the light emitting device may include a light emitting diode.

In one embodiment, the photoelectric device and the light emitting device may be electrically separated.

In one embodiment, the photoelectric element and the light emitting element may be provided in an insulating layer provided under the support plate.

In one embodiment, the apparatus further includes a sensor unit for measuring temperature distribution information of the substrate, and the controller may determine a light emitting element to be turned on according to the temperature distribution information.

In one embodiment, the power supply unit may further include a filter connected between the power supply unit and the plurality of heating units to block the high-frequency power signal.

A method of controlling a substrate temperature using a substrate temperature control apparatus according to an embodiment of the present invention includes: obtaining temperature distribution information of a substrate including a plurality of regions; And controlling the plurality of photoelectric elements based on the temperature distribution information.

In one embodiment, the step of controlling the plurality of photoelectric elements may include a step of controlling the plurality of light emitting elements to emit light to a photoelectric element connected to the heating unit provided in a low temperature region according to the temperature distribution information Determining; And turning on the determined light emitting device.

According to one embodiment of the present invention, in controlling the temperature of the substrate including a plurality of regions by region, one power supply terminal and an RF filter are connected to a plurality of heating units for controlling the temperature of the substrate by region, Temperature can be controlled by region. Accordingly, the substrate temperature control apparatus according to an embodiment of the present invention can control the temperature of the substrate on a region-by-region basis without increasing the volume of the apparatus for controlling the temperature of the substrate.

The effects of the present invention are not limited to the effects described above. Unless stated, the effects will be apparent to those skilled in the art from the description and the accompanying drawings.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.
2 is an exemplary schematic diagram illustrating a temperature control apparatus according to an embodiment of the present invention.
FIG. 3 is a view for explaining an operation between constitutions of a substrate temperature control apparatus according to an embodiment of the present invention.
4 is a circuit diagram showing a connection relationship between a plurality of heating units, a plurality of photoelectric elements, and a power supply unit according to an embodiment of the present invention.
5 and 6 are views for explaining a method of controlling a temperature of a substrate according to temperature distribution information of a substrate according to an embodiment of the present invention.
7 is a flowchart showing a method of controlling a substrate temperature according to one embodiment of the present invention.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not. The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention.

In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. Also, 'equipped' and 'possessed' should be interpreted in the same way.

The present invention relates to a substrate temperature control apparatus and a substrate processing apparatus including the substrate temperature control apparatus, and more particularly, to a substrate temperature control apparatus capable of controlling the temperature of a substrate having multi-zones by region without increasing the volume of the apparatus. The apparatus for controlling a substrate temperature according to an embodiment of the present invention includes a support plate for supporting a substrate, a plurality of heating units provided in different regions of the support plate for controlling the temperature of the substrate by region, A power supply unit for supplying electric power to the unit; A plurality of photoelectric elements connected between the plurality of heating units and the power supply unit; And a control unit for controlling the photoelectric elements to regulate electric power supplied to each of the plurality of heating units. That is, in the substrate temperature control apparatus according to the embodiment of the present invention, the photoelectric elements are connected to each of the plurality of heating units and the photoelectric elements are controlled, so that a single power source It is possible to control the power supplied from the stage to the plurality of heating units. Accordingly, only one filter is required for the filter connected to the power supply end in order to block the high frequency power signal. Therefore, according to an embodiment of the present invention, since a power source stage, a filter, and the like are not additionally required according to a substrate having a plurality of regions, the temperature of the substrate can be controlled for each region without increasing the volume of the apparatus.

1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention.

Referring to Fig. 1, a substrate processing apparatus 10 processes a substrate W using a plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. [ The substrate processing apparatus 10 may include a chamber 100, a substrate support assembly 200, a showerhead 300, and a gas supply unit 400.

The chamber 100 may provide a processing space in which a substrate processing process is performed. The chamber 100 has a processing space therein and can be provided in a closed configuration. The chamber 100 may be made of a metal material. According to one embodiment, the chamber 100 may be provided with an aluminum material. The chamber 100 may be grounded. An exhaust hole 102 may be formed in the bottom surface of the chamber 100. The exhaust hole 102 may be connected to the exhaust line 151. The reaction byproducts generated in the process and the gas staying in the inner space of the chamber can be discharged to the outside through the exhaust line 151. The interior of the chamber 100 may be depressurized to a predetermined pressure by an evacuation process.

According to one example, a liner 130 may be provided within the chamber 100. The liner 130 may have a cylindrical shape with open top and bottom surfaces. The liner 130 may be provided to contact the inner surface of the chamber 100. The liner 130 protects the inner wall of the chamber 100 to prevent the inner wall of the chamber 100 from being damaged by the arc discharge. It is also possible to prevent impurities generated during the substrate processing step from being deposited on the inner wall of the chamber 100. Optionally, the liner 130 may not be provided.

The substrate support plate 200 may be positioned inside the chamber 100. The support plate 200 can support the substrate W. The substrate support plate 200 may include an electrostatic chuck 210 for attracting the substrate W using an electrostatic force. Alternatively, the substrate support plate 200 may support the substrate W in a variety of ways, such as mechanical clamping. Hereinafter, the substrate supporting plate 200 including the electrostatic chuck 210 will be described.

The substrate support assembly 200 may include an electrostatic chuck 210, a bottom cover 250 and a plate 270. The substrate support assembly 200 is spaced upwardly from the bottom surface of the chamber 100 within the chamber 100.

The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focus ring 240. The electrostatic chuck 210 can support the substrate W. [

The dielectric plate 220 may be positioned at the top of the electrostatic chuck 210. The dielectric plate 220 may be provided as a disk-shaped dielectric substance. The substrate W may be placed on the upper surface of the dielectric plate 220. The upper surface of the dielectric plate 220 may have a smaller radius than the substrate W. [ The edge region of the substrate W may be located outside the dielectric plate 220.

The dielectric plate 220 may include a first electrode 223, a heater 225, and a first supply path 221 therein. The first supply passage 221 may be provided from the upper surface to the lower surface of the dielectric plate 210. A plurality of the first supply passages 221 may be spaced apart from each other and may be provided as a passage through which the heat transfer medium is supplied to the bottom surface of the substrate W.

The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a DC power source. A switch 223b may be provided between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a by turning on / off the switch 223b. When the switch 223b is turned on, a direct current can be applied to the first electrode 223. An electrostatic force acts between the first electrode 223 and the substrate W by the current applied to the first electrode 223 and the substrate W can be attracted to the dielectric plate 220 by the electrostatic force.

The heating unit 225 may be positioned below the first electrode 223. The heating unit 225 may be electrically connected to the second power source 225a. The heating unit 225 can generate heat by resisting the current applied from the power source. The generated heat can be transferred to the substrate W through the dielectric plate 220. The substrate W can be maintained at a predetermined temperature by the heat generated in the heating unit 225. The heating unit 225 may include a helical coil.

The body 230 may be positioned below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the body 230 may be bonded together by a bonding unit 236. The body 230 may be made of aluminum. The upper surface of the body 230 may be stepped so that the central region is located higher than the edge region. The top center region of the body 230 may have an area corresponding to the bottom surface of the dielectric plate 220 and be adhered to the bottom surface of the dielectric plate 220. The body 230 may have a first circulation channel 231, a second circulation channel 232, and a second supply channel 233 formed therein.

The first circulation channel 231 may be provided as a passage through which the heat transfer medium circulates. The first circulation flow path 231 may be formed in a spiral shape inside the body 230. Alternatively, the first circulation flow path 231 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the first circulation flow paths 231 can communicate with each other. The first circulation flow paths 231 may be formed at the same height.

The second circulation flow passage 232 may be provided as a passage through which the cooling fluid circulates. The second circulation flow path 232 may be formed in a spiral shape inside the body 230. Alternatively, the second circulation flow path 232 may be arranged so that the ring-shaped flow paths having different radii have the same center. Each of the second circulation flow paths 232 can communicate with each other. The second circulation channel 232 may have a larger cross-sectional area than the first circulation channel 231. The second circulation flow paths 232 may be formed at the same height. The second circulation flow passage 232 may be positioned below the first circulation flow passage 231.

The second supply passage 233 may extend upward from the first circulation passage 231 and may be provided on the upper surface of the body 230. The second supply passage 243 may be provided in a number corresponding to the first supply passage 221 and may be connected to the first circulation passage 231 and the first supply passage 221.

The first circulation channel 231 may be connected to the heat transfer medium storage unit 231a through the heat transfer medium supply line 231b. The heat transfer medium storage unit 231a may store the heat transfer medium. The heat transfer medium may include an inert gas. According to an embodiment, the heat transfer medium may comprise helium (He) gas. Helium gas can be supplied to the first circulation channel 231 through the supply line 231b and supplied to the bottom surface of the substrate W through the second supply channel 233 and the first supply channel 221 in order . The helium gas serves as a medium for transferring the heat transferred from the plasma to the substrate W to the electrostatic chuck 210.

The second circulation channel 232 may be connected to the cooling fluid storage 232a through the cooling fluid supply line 232c. The cooling fluid may be stored in the cooling fluid storage portion 232a. A cooler 232b may be provided in the cooling fluid storage portion 232a. The cooler 232b may cool the cooling fluid to a predetermined temperature. Alternatively, the cooler 232b may be installed on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation channel 232 through the cooling fluid supply line 232c circulates along the second circulation channel 232 and can cool the body 230. [ The body 230 is cooled and the dielectric plate 220 and the substrate W are cooled together to maintain the substrate W at a predetermined temperature.

The body 230 may include a metal plate. According to one example, the entire body 230 may be provided as a metal plate. The body 230 may be electrically connected to the third power source 235a. The first power source 235a may be provided as a high frequency power source for generating high frequency power. The high frequency power source can be provided by an RF power source. The body 230 can receive high frequency power from the first power source 235a. This allows the body 230 to function as an electrode.

The showerhead unit 300 includes a shower head 310, a gas injection plate 320, and a support portion 330. The showerhead 310 is spaced apart from the upper surface of the chamber 100 by a predetermined distance. A predetermined space is formed between the gas injection plate 310 and the upper surface of the chamber 100. The showerhead 310 may be provided in a plate shape having a constant thickness. The bottom surface of the showerhead 310 may be polarized on its surface to prevent arcing by plasma. The end face of the shower head 310 may be provided to have the same shape and cross-sectional area as the support plate 200. The shower head 310 includes a plurality of injection holes 311. The spray hole 311 penetrates the upper surface and the lower surface of the shower head 310 in the vertical direction. The shower head 310 includes a metal material.

The showerhead 310 may be electrically connected to the fourth power source 351. The fourth power source 351 may be provided as a high frequency power source. Alternatively, the showerhead 310 may be electrically grounded. The showerhead 310 may be electrically connected to the second power source 351 or may be grounded to function as an electrode.

A gas supply unit (400) supplies a process gas into the chamber (100). The gas supply unit 400 includes a gas feeder 410, a gas supply pipe 420, and a gas storage unit 430. The gas feeder 410 is installed at the center of the upper surface of the chamber 100. A process gas is supplied from the gas feeder 410 into the chamber 100.

2 is an exemplary schematic diagram illustrating a temperature control apparatus according to an embodiment of the present invention.

As shown in FIG. 2, the substrate temperature control apparatus according to an embodiment of the present invention includes a support plate 200 for supporting a substrate W, a plurality of (Not shown) for providing power to a plurality of heating units, a plurality of photoelectric elements 610 connected between the plurality of heating units 225 and the power supply unit, and a plurality of photoelectric elements And a control unit 630 that adjusts the power supplied to each of the heating units 225 of the heating unit. The control unit 630 may include a plurality of light emitting devices 620 that control the photoelectric device 610 by irradiating a plurality of photoelectric devices 610 with light 601. [ In one embodiment, the substrate temperature control apparatus may further include a sensor unit (not shown) for measuring the temperature distribution of the substrate, and the controller 630 may control the temperature of the substrate to be on according to the temperature distribution information measured by the sensor unit. ) Can be determined. The photoelectric element 610 and the light emitting element 620 can be electrically separated. The insulating layer 600 may be provided under the support plate 610 and the photoelectric element 610 and the light emitting element 620 may be provided apart from the insulating layer 600. [ Accordingly, the light emitting device 620 is isolated from the region where the high-frequency power signal is present by the insulating layer 600, so that it is not necessary to provide a separate filter.

As described above, the substrate temperature control apparatus according to an embodiment of the present invention includes a plurality of heating units 225 provided on a support plate 200, a plurality of photoelectric elements 610 connected to the plurality of heating units 225, The light emitting device 620 irradiates light to the photoelectric device 610 connected to the heating unit 225 installed in the region of the substrate to be heated, (225). Thus, the plurality of heating units 225 are connected to one power supply unit without connecting the power supply unit, the RF filter, and the control unit to each of the plurality of heating units 225 to control the power supplied to each of the heating units 225 can do. In this case, since one power supply unit is used, only one filter is required for blocking the high-frequency power signal. Therefore, even in the case of a substrate having a multi-zone, it is possible to control the temperature of each substrate region without increasing the volume of the apparatus.

FIG. 3 is a view for explaining an operation between constitutions of a substrate temperature control apparatus according to an embodiment of the present invention.

3, the heating unit 225 is connected to the phototransistor 611 as an example of a power supply and an opto-electronic device, and is connected to the power supply by a filter connected between the power supply and the heating unit 225 The high-frequency power signal can be supplied to the heating unit 225 with the cut-off power. In this case, power supply to the heating unit 225 is determined by the phototransistor 611, and when the light 601 is irradiated by the light emitting diode 621 as an example of the light emitting element, So that electric power can be supplied to the heating unit 225. [ In this case, an insulating layer may be provided between the phototransistor 611 and the light emitting diode 621. In this case, the insulating layer may be provided as a transparent material so as not to interfere with the light irradiated by the light emitting diode 621 from being incident on the phototransistor 611. Since the upper region including the phototransistor 611 and the lower region including the light emitting diode 621 are electrically isolated from each other, the lower region is isolated from the upper region where the high-frequency power signal is generated. Thus, the light emitting diode 621 The high-frequency power cut-off filter is not required for the power supply unit for turning on the power supply unit.

4 is a circuit diagram showing a connection relationship between a plurality of heating units, a plurality of photoelectric elements, and a power supply unit according to an embodiment of the present invention.

4, a plurality of heating units 225 are provided for controlling the temperature of each substrate region, and a plurality of heating units 225 are provided between the plurality of heating units 225 and the power supply unit A plurality of phototransistors 611 are connected. That is, by connecting a plurality of phototransistors 611 to each of the plurality of heating units 225, it is not necessary to provide a power supply stage, a filter, and a control unit in each of the plurality of heating units 225, It is possible to supply power by adjusting the power supply to each heating unit 225. Here, the filter may be a filter that cuts off a high-frequency power signal that is supplied to the power supply unit by the RF filter. 4, a light emitting element for controlling the phototransistor 611 may be disposed under each phototransistor 611 to irradiate light with the phototransistor 611. [ In one embodiment, the phototransistor 611 and the light emitting element can be electrically separated. As an example, an insulating layer may be provided between the phototransistor 611 and the light emitting element. In this case, the insulating layer may be provided as a transparent material so as not to interfere with the light irradiated by the light emitting element from being incident on the phototransistor 611.

5 and 6 are views for explaining a method of controlling a temperature of a substrate according to temperature distribution information of a substrate according to an embodiment of the present invention.

As shown in FIG. 5, the temperature distribution information of the substrate can be displayed for each region of the substrate, and the region where the temperature of the substrate is lower than the reference temperature can be represented by regions A1, A2, and A3. In this case, the heating unit 1 (225A1), the heating unit 2 (225A2), and the heating unit 3 (225A3) provided in the areas A1, A2, and A3 The control unit can turn on the light emitting element for irradiating light to the phototransistor 611 connected to the heating unit 1 (225A1), the heating unit 2 (225A2), and the heating unit 3 (225A3). In this case, although not shown, the light emitting element may be positioned below each phototransistor 611 and electrically separated from the phototransistor 611. In one embodiment, an insulating layer may be provided under the phototransistor 611, and a light emitting device may be disposed under the insulating layer. In this case, the insulating layer can be provided as a transparent material so as not to interfere with the light irradiated by the light emitting element from being incident on the phototransistor. This allows the phototransistor to flow current by the light irradiated by the light emitting element to selectively turn on the heating units 225A1, 225A2, and 225A3 of the low temperature regions A1, A2, and A3.

7 is a flowchart showing a method of controlling a substrate temperature according to one embodiment of the present invention.

7, a substrate temperature control method according to an exemplary embodiment of the present invention includes a step S610 of obtaining temperature distribution information of a substrate including a plurality of regions, (Step S620).

In one embodiment, the step of controlling the plurality of photoelectric elements (S620) includes a step of irradiating light to a plurality of photoelectric elements, and a plurality of light emitting elements for controlling the photoelectric elements, Determining a light emitting device that emits light to a connected photoelectric device; And turning on the determined light emitting element.

The substrate temperature control method may be implemented by a computer-executable program, an application program, or a computer-readable recording medium.

The computer readable recording medium may be a volatile memory such as a static RAM (SRAM), a dynamic RAM (DRAM), or a synchronous DRAM (SDRAM), a read only memory (ROM), a programmable ROM (PROM), an electrically programmable ROM (EPROM) A floppy disk, a hard disk, or the like, such as an electrically erasable and programmable ROM (EEPROM), a flash memory device, a phase-change RAM (PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM) But are not limited to, optical storage media such as CD ROMs, DVDs, and the like.

It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications are possible within the scope of the present invention. It is to be understood that the technical scope of the present invention should be determined by the technical idea of the claims and the technical scope of protection of the present invention is not limited to the literary description of the claims, To the invention of the invention.

200: Support plate
225: Heating unit
600: insulating layer
610: Photoelectric element
620: Light emitting element
630:

Claims (18)

A support plate for supporting the substrate;
An insulating layer disposed under the support plate;
A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region;
A plurality of photoelectric elements which are provided in different regions of the insulating layer and are provided to correspond to the respective heating units and are electrically connected to the plurality of heating units;
A plurality of light emitting elements provided in the insulating layer, the plurality of light emitting elements being electrically separated from the photoelectric elements and controlling the photoelectric elements by irradiating light to the photoelectric elements;
A sensor unit for measuring temperature distribution information of the substrate; And
And a control unit controlling the photoelectric elements to adjust power supplied to each of the plurality of heating units,
Wherein the controller determines a light emitting element to be turned on according to the temperature distribution information acquired from the sensor unit,
Wherein a transparent insulating layer capable of transmitting light is provided between the plurality of photoelectric elements and the plurality of light emitting elements. The method according to claim 1,
Wherein the plurality of photoelectric elements comprise phototransistors. delete The method according to claim 1,
Wherein the light emitting device includes a light emitting diode. delete delete delete The method according to claim 1,
And a filter connected between the power supply unit and the plurality of heating units to block the high-frequency power signal flowing into the power supply unit. A chamber having a space for processing the substrate therein;
A substrate support assembly located within the chamber, the substrate support assembly including a support plate supporting the substrate and an insulating layer located below the support plate;
A gas supply unit for supplying gas into the chamber;
A plasma generating unit including a high frequency power source for providing high frequency power and exciting gas in the chamber into a plasma state; And
And a substrate temperature control unit for controlling the temperature of the substrate,
Wherein the substrate temperature control unit comprises:
A plurality of heating units installed in different regions of the support plate to adjust the temperature of the substrate by region;
A plurality of photoelectric elements which are provided in different regions of the insulating layer and are provided to correspond to the respective heating units and are electrically connected to the plurality of heating units;
A plurality of light emitting elements provided in the insulating layer, the plurality of light emitting elements being electrically separated from the photoelectric elements and controlling the photoelectric elements by irradiating light to the photoelectric elements;
A sensor unit for measuring temperature distribution information of the substrate; And
And a control unit controlling the photoelectric elements to adjust power supplied to each of the plurality of heating units,
Wherein the controller determines a light emitting element to be turned on according to the temperature distribution information acquired from the sensor unit,
Wherein a transparent insulating layer capable of transmitting light is provided between the plurality of photoelectric elements and the plurality of light emitting elements. 10. The method of claim 9,
Wherein the plurality of photoelectric elements comprise phototransistors. delete 10. The method of claim 9,
Wherein the light emitting element includes a light emitting diode. delete delete delete 10. The method of claim 9,
Further comprising a filter connected between the power supply unit and the plurality of heating units to cut off the high-frequency power signal.


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