KR101976538B1 - Electrostatic chuck and apparatus for processing a substrate including the same - Google Patents

Abstract

The temperature-variable electrostatic chuck includes a dielectric layer, a ceramic thermal conductive layer, and an insulating layer. The dielectric layer has an electrostatic electrode for generating an electrostatic force for adsorbing a substrate placed thereon and has a first heat transfer coefficient. Wherein the ceramic thermal conductive layer includes a first surface adjacent to the dielectric layer and a second surface opposite to the first surface, and a heating electrode for generating heat for heating the substrate is formed on the second surface by patterning And a second heat transfer coefficient higher than the first heat transfer coefficient. The insulating layer is integrally formed with the second surface of the ceramic thermally conductive layer and has a third heat transfer coefficient lower than the first heat transfer coefficient.
Thus, the heating electrode is patterned on one surface of the ceramic thermal conductive layer, and the insulating layer disposed under the ceramic thermal conductive layer is integrally formed with the ceramic thermal conductive layer without bonding, thereby preventing heat loss by the bonding layer, Can be increased.

Description

TECHNICAL FIELD [0001] The present invention relates to a temperature-variable electrostatic chuck, and a substrate processing apparatus including the same.

The present invention relates to a temperature-variable electrostatic chuck and a substrate processing apparatus including the same, and more particularly, to a temperature-variable electrostatic chuck for adsorbing a wafer or a glass substrate used for manufacturing an integrated circuit device by using an electrostatic force, And a substrate processing apparatus.

In general, an integrated circuit device is manufactured by performing a deposition process, an etching process, a photolithography process, an ion implantation process, and the like on a wafer or a glass substrate, and examples thereof include a semiconductor device or a display device have.

Among the above processes, the etching process includes a process chamber for providing a space for performing the process, a gas supplier connected to the process chamber from the outside to provide a process gas corresponding to the etching process into the process chamber, And an electrostatic chuck that is disposed inside the process chamber and fixes the substrate by electrostatic force while supporting the substrate.

The electrostatic chuck is provided with a dielectric layer having an electrostatic electrode embedded in its upper portion. By applying a voltage to the electrostatic electrode to form an electrostatic force on the dielectric layer, the substrate placed on the dielectric layer is electrostatically attracted and fixed. Further, the electrostatic chuck includes a heat conduction layer in which a heating electrode for heating the substrate is disposed under the dielectric layer. The thermally conductive layer is provided on the support body. An example of such an electrostatic chuck is disclosed in Korean Patent Publication No. 2009-0064555.

Particularly, in the case of a temperature-variable electrostatic chuck capable of adjusting the temperature of the heating electrode, it can be more effectively used in semiconductor processes such as etching and CVD (Chemical Vapor Deposition). Such a temperature variable electrostatic chuck is required to maximize the heat transfer efficiency of the heat conduction layer and the thermal responsiveness during temperature control.

However, the conventional electrostatic chuck has a structure in which the heating electrode and upper and lower structures are bonded by bonding. According to such a bonding structure, a heat loss is generated due to a bonding layer formed of an adhesive, resulting in poor heat transfer efficiency and thermal responsiveness, and the heat resistance of the bonding layer is low, thereby deteriorating thermal durability at high temperatures.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a temperature variable electrostatic chuck capable of improving heat transfer efficiency and thermal responsiveness and enhancing thermal durability at a high temperature.

Another object of the present invention is to provide a substrate processing apparatus including the temperature variable electrostatic chuck.

To attain the above object, the temperature variable electrostatic chuck includes a dielectric layer, a ceramic thermal conductive layer, an insulating layer, and a supporting body. The dielectric layer has an electrostatic electrode for generating an electrostatic force for adsorbing a substrate placed thereon and has a first heat transfer coefficient. Wherein the ceramic thermal conductive layer includes a first surface adjacent to the dielectric layer and a second surface opposite to the first surface, and a heating electrode for generating heat for heating the substrate is formed on the second surface by patterning And a second heat transfer coefficient higher than the first heat transfer coefficient. The insulating layer is integrally formed with the second surface of the ceramic thermally conductive layer and has a third heat transfer coefficient lower than the first heat transfer coefficient. The support body is disposed below the insulating layer, and a cooling channel is formed in the support body.

In one embodiment, the ceramic thermal conductive layer and the insulating layer may be integrally formed through a firing process.

In one embodiment, the dielectric layer, the ceramic thermal conductive layer, and the insulating layer may be integrally formed through a firing process.

In one embodiment, the dielectric layer and the ceramic thermal conductive layer may be made of aluminum nitride (AlN).

In one embodiment, the device may further include a second dielectric layer disposed between the insulating layer and the support body.

In one embodiment, the heating electrode may protrude from the second surface to the outside of the ceramic thermally conductive layer.

In one embodiment, the heating electrode may protrude from the second surface to the inside of the ceramic thermally conductive layer.

In one embodiment, the ceramic thermal conductive layer may be made of a ceramic material containing at least one selected from the group consisting of aluminum nitride (AlN), silicon carbide (SiC), and silicon nitride (Si3N4).

In one embodiment, the ceramic thermally conductive layer preferably has a thickness of 0.5 mm to 2 mm.

In one embodiment, the heating electrode preferably has a thickness of 10 mu m to 300 mu m.

In one embodiment, the width between the heating electrodes is preferably 0.5 mm to 2 mm.

In one embodiment, the insulating layer is preferably made of an amorphous glass system.

In one embodiment, it is preferred that the insulating layer has a thickness of between 50 μm and 500 μm.

According to another aspect of the present invention, there is provided a substrate processing apparatus including a process chamber for providing a space for processing a substrate, a process chamber connected to the process chamber, for supplying a process gas for processing the substrate into the process chamber And a temperature variable electrostatic chuck disposed inside the process chamber and supporting and fixing a substrate to be processed through the process gas, wherein the temperature variable electrostatic chuck is disposed on the upper side of the substrate A dielectric layer having an electrostatic electrode for generating electrostatic force for generating an electrostatic force and having a first heat transfer coefficient, a first surface adjacent to the dielectric layer, and a second surface opposite to the first surface, And a second heat transfer coefficient higher than the first heat transfer coefficient is formed on the second surface, An insulating layer formed integrally with and in contact with a second surface of the ceramic thermally conductive layer and having a third heat transfer coefficient lower than the first heat transfer coefficient; And a support body.

In one embodiment, the ceramic thermal conductive layer and the insulating layer may be integrally formed through a firing process.

In one embodiment, the dielectric layer, the ceramic thermal conductive layer, and the insulating layer may be integrally formed through a firing process.

In one embodiment, the dielectric layer and the ceramic thermal conductive layer may be made of aluminum nitride (AlN).

According to the temperature variable electrostatic chuck and the substrate processing apparatus including the same, the heating electrode is patterned on one surface of the ceramic thermal conductive layer, and the insulating layer disposed under the ceramic thermal conductive layer is integrally formed with the ceramic thermal conductive layer without bonding, It is possible to prevent heat loss due to the bonding layer and to improve heat transfer efficiency and heat responsiveness.

Further, the ceramic thermal conductive layer and the insulating layer integrated through the firing process can secure thermal durability against the high temperature generated by the heating electrode.

1 is a cross-sectional view schematically showing a temperature-variable electrostatic chuck according to an embodiment of the present invention.
2 is a cross-sectional view schematically showing a temperature-variable electrostatic chuck according to another embodiment of the present invention.
3 is a schematic view showing a substrate processing apparatus including the temperature-variable electrostatic chuck shown in Fig.
4 is a flowchart for explaining a method of manufacturing the temperature variable electrostatic chuck shown in FIG.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the invention, and are actually shown in a smaller scale than the actual dimensions in order to explain the schematic configuration. The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

Hereinafter, a temperature variable electrostatic chuck according to an embodiment of the present invention and a method of manufacturing the same will be described with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing a temperature-variable electrostatic chuck according to an embodiment of the present invention.

1, a temperature-variable electrostatic chuck 100 according to an embodiment of the present invention includes a dielectric layer 110, a ceramic thermal conductive layer 120a, an insulating layer 130a, and a support body 140. As shown in FIG.

The dielectric layer 110 supports the substrate 10 overlying it. Here, the substrate 10 may be a wafer or a glass substrate for manufacturing a semiconductor element or a display element of an integrated circuit element.

In the dielectric layer 110, an electrostatic electrode 115 for generating an electrostatic force for fixing the substrate 10 is disposed. Here, the electrostatic electrode 115 may be embedded in the dielectric layer 110 in the form of a large plate. The electrostatic electrode 115 may be made of a metal material containing tungsten (W) and molybdenum (Mo) having a low thermal expansion coefficient or a mixture thereof.

The dielectric layer 110 may have a first heat transfer coefficient of about 10 W / (m · K) to 30 W / (m · K) considering the heat transfer efficiency, and may have a thickness of 0.5 mm to 5 mm.

The dielectric layer 110 is made of an insulating ceramic material. In particular, the dielectric layer 110 may comprise a ceramic material comprising aluminum oxide (Al2O3) and yttrium oxide (Y2O3) or mixtures thereof. For example, the dielectric layer 110 may be formed by adding magnesium oxide (MgO) or silicon oxide (SiO2) to aluminum oxide (Al2O3) in an amount of about 90% to 99% (C), graphite, and carbon nanotubes (CNT) may be added to (Y 2 O 3). In this case, the volume resistivity of the dielectric layer 110 has a high resistance characteristic of about 10 ¹⁴ ? Cm to 10 ¹⁶ ? Cm, and can have a dielectric constant of about 8 to 12.

The ceramic thermal conductive layer 120a is disposed below the dielectric layer 110. [ The ceramic thermal conductive layer 120a includes a first side 121 adjacent to the dielectric layer 110 and a second side 122 opposite the first side 121. [ A heating electrode 125a for generating heat for heating the substrate 10 is patterned and formed on the second surface 122 of the ceramic thermal conductive layer 120a. The patterning of the heating electrode 125a can be performed through a ceramic firing process at a high temperature of 800 DEG C or higher to enhance the tightness with the ceramic thermal conductive layer 120a. In the case of the related art in which the exothermic electrode 125a and the ceramic thermal conductive layer 120a are bonded by bonding, the heat resistance is less than 120 占 폚. However, when the ceramic ceramic firing process is integrated as in the present invention, Durability.

The heating electrode 125a may protrude from the second surface 122 to the outside of the ceramic thermal conductive layer 120a when viewed in cross section. That is, one surface of the heating electrode 125a contacts the second surface of the ceramic thermal conductive layer 120a, and the insulating layer 130a located below the ceramic thermal conductive layer 120a contacts the side surface of the heating electrode 125a And has a structure that surrounds the opposite surface. Here, the thickness of the insulating layer 130a is thicker than the exothermic electrode 125a. Further, the heating electrode 125a may be arranged in a spiral shape or a concavo-convex shape when viewed in plan view. The exothermic electrode 125a may have a single or multiple series / parallel circuit structure. On the other hand, the exothermic temperature of the exothermic electrode 125a can be controlled by a controller (not shown).

As the manufacturing method of the heating electrode 125a, a metal paste printing method, a metal spray coating method, a metal thin film deposition method using a plasma, or the like can be applied. For example, the heating electrode 125a can be manufactured through a metal paste such as silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), or titanium (Ti) These may be used alone or in combination of two or more.

The heating electrode 125a may be formed of a powder material such as tungsten (W), molybdenum (Mo), titanium (Ti), or the like, or may be formed of gold (Au), nickel (Ni), titanium (TiN) or the like. The heating electrode 125a may include a metallic material as a main component, and may further include a ceramic component or the like.

The heating electrode 125a has a resistance of about 1 OMEGA to 100 OMEGA, and may be formed to a thickness of 10 mu m to 300 mu m and a length of 3 m to 30 m. If the thickness of the exothermic electrode 125a is less than 10 占 퐉, passing current for heat transfer may be difficult to pass. If the thickness of the exoergic electrode 125a is more than 300 占 퐉, the degree of difficulty in forming the ceramic thermally conductive layer 120a tightly becomes high. Lifting may occur between the heat conductive layer 120a and the heat conductive layer 120a. In addition, the width between the heating electrodes 125a may be 0.5 mm to 2 mm. If the width between the heating electrodes 125a is less than 0.5 mm, it is difficult to ensure the withstand voltage of the alternating current applied during the heating. If the width is larger than 2.0 mm, uniform temperature control to the substrate 10 is difficult.

The ceramic thermal conductive layer 120a has a second heat transfer coefficient higher than the first heat transfer coefficient. For example, the second heat transfer coefficient is preferably 90 W / (m · K) to 320 W / (m · K). The ceramic thermal conductive layer 120a may be made of a ceramic material containing at least one selected from the group consisting of aluminum nitride (AlN), silicon carbide (SiC), and silicon nitride (Si3N4) To 2 mm. When the thickness of the ceramic thermal conductive layer 120a is 0.5 mm or less, the workability is low and the region where the heat fluxes overlap is small, and the temperature uniformity may be deteriorated. On the other hand, temperature uniformity is better than 2.0mm, but heat transfer efficiency can be lowered. In addition, when the thickness of the ceramic thermal conductive layer 120a is 2.0 mm or more, heat transfer efficiency characteristics tend to be saturated, and thus it is difficult to expect a significant improvement in the heat transfer efficiency characteristics compared to the thickness increase.

The insulating layer 130a is disposed below the ceramic thermal conductive layer 120a. The insulating layer 130a blocks the heat generated from the heating electrode 125a to the lower portion and guides the upper portion. The insulating layer 130a can more uniformly heat the substrate more effectively while increasing the heat transfer to the upper portion and reducing the heat loss to the lower portion. To this end, the insulating layer 130a has a third heat transfer coefficient that is lower than the second heat transfer coefficient of the ceramic thermal conductive layer 120a, as well as the first heat transfer coefficient of the dielectric layer 110. [ For example, the third heat transfer coefficient is preferably 0.5 W / (m · K) to 5 W / (m · K). Further, the insulating layer 130a may have a volume resistivity of 10 ⁸ ? Cm to 10 ¹⁶ ? Cm.

The insulating layer 130a is formed integrally with the second surface 122 of the ceramic thermal conductive layer 120a in contact with the second surface 122a. The ceramic thermal conductive layer 120a and the insulating layer 130a may be integrated through a firing process. The firing process refers to a method of making a curable material by heating a combined raw material. That is, unlike the prior art in which each layer is bonded by bonding, the ceramic thermal conductive layer 120a is subjected to plastic working at the upper part with the heat generating electrode 125a as a center, and the insulating layer 130a is formed by plastic working. Although the heat resistance of the bonding layer is less than 120 ° C, the ceramic thermal conductive layer 120a and the insulating layer 130a of this embodiment are integrated by a ceramic firing method and have thermal durability at a temperature of 360 ° C or less.

Meanwhile, as another embodiment, the dielectric layer 110, the ceramic thermal conductive layer 120a, and the insulating layer 130a may be integrally formed through a sintering process. In this case, the dielectric layer 110 and the ceramic thermal conductive layer 120a may be made of aluminum nitride (AlN). Therefore, by integrally forming each layer without bonding, heat loss due to the bonding layer can be prevented, and heat transfer efficiency and heat responsiveness can be improved.

The insulating layer 130a may be formed of an amorphous glass-based material. For example, the insulating layer 130a may be made of a glass-based ceramic material of high-temperature firing type such as silicon oxide (SiO2), magnesium oxide (MgO), zinc oxide (ZnO) Can be mixed and used. Alternatively, the insulating layer 130a may be formed of a polymeric material such as silicon, acrylic, or epoxy, or may be formed of a mixture of two or more materials.

The insulating layer 130a may have a thickness of 50 占 퐉 to 500 占 퐉. When the thickness of the insulating layer 130a is less than about 50 탆, the temperature of the substrate 10 is not uniform due to the influence of the cooling fluid flowing through the cooling channel 145 of the supporting body 140 disposed at the lower portion, The heat efficiency to be transmitted to the heat generating electrode 10 is lowered, and the heat generating electrode 125a must generate an unnecessarily large amount of heat. In addition, in the above case, a relatively large amount of heat is transferred to the support body 140 disposed at the lower portion of the insulating layer 130a, so that a large amount of cooling fluid is supplied to the cooling passage 145 or cooled It is not preferable because it takes a long time. On the other hand, when the thickness of the insulating layer 130a is more than about 500 mu m, the effect of blocking heat from the heating electrode 125a is not changed. Accordingly, it is preferable that the insulating layer 130a has a thickness of about 50 to 500 占 퐉, which can effectively block the heat transmitted from the heating electrode 125a to the supporting body 140 without being thick.

The supporting body 140 is disposed below the insulating layer 130a and serves as a pedestal for supporting the dielectric layer 110, the ceramic thermally conductive layer 120a, and the insulating layer 130a as a whole. The support body 140 has a cooling channel 145 uniformly distributed therein. The support body 140 can cool the heat partially transferred from the insulating layer 130a by flowing a cooling fluid to the cooling passage 145. [

The temperature-variable electrostatic chuck 100 includes a first layer (not shown) for bonding the dielectric layer 110 and the ceramic thermal conductive layer 120a, and a second bonding layer (not shown) for bonding the insulating layer 130a and the supporting body 140 Layer (not shown).

As described above, the heating electrode 125a is patterned on one surface of the ceramic thermal conductive layer 120a having the second heat transfer coefficient higher than the first heat transfer coefficient of the upper dielectric layer 110, and the third heat transfer coefficient, which is lower than the first heat transfer coefficient, It is possible to prevent the heat loss due to the bonding layer and to improve the heat transfer efficiency and the thermal responsiveness.

In addition, the ceramic thermal conductive layer 120a and the insulating layer 130a integrated through the firing process can secure thermal durability against the high temperature generated by the heating electrode 125a.

2 is a cross-sectional view schematically showing a temperature-variable electrostatic chuck according to another embodiment of the present invention.

2, the temperature-variable electrostatic chuck 100 according to the present embodiment includes a dielectric layer 110, a ceramic thermal conductive layer 120b, an insulating layer 130b, and a support body 140. [ The heating electrode 125b is formed on the second surface 122 of the electrostatic chuck 100 except that the second dielectric layer 150 is further formed on the second surface 122 of the ceramic thermally conductive layer 120b, The other configuration is the same as that of FIG. 1, so that a duplicate description will be omitted.

The heating electrode 125b may protrude from the second surface 122 to the inside of the ceramic thermal conductive layer 120b when viewed in cross section. That is, one surface of the heating electrode 125b is in contact with one surface of the insulating layer 130b located under the ceramic thermally conductive layer 120b, and the ceramic thermally conductive layer 120b is in contact with one surface of the heating electrode 125b And has a structure surrounding the other surface. Here, the thickness of the ceramic thermally conductive layer 120b may be thicker than the exothermic electrode 125b. On the other hand, the manufacturing method of the heating electrode 125b, the ceramic thermal conductive layer 120b and the insulating layer 130b is the same as the manufacturing method described in connection with the embodiment of Fig.

As described above, by increasing the area in which the heating electrode 125b contacts the ceramic heat conduction layer 120b, the heat transfer can be increased.

The temperature-variable electrostatic chuck 100 may further include a second dielectric layer 150 disposed between the insulating layer 130a and the supporting body 140. Referring to FIG. The leakage current from the heating electrode 125a may be increased as the temperature of the heating body increases toward the higher temperature and the second dielectric layer 150 is disposed between the insulating layer 130a and the supporting body 140 to prevent current leakage to the supporting body 140 . The second dielectric layer 150 may comprise a ceramic material including aluminum oxide (Al2O3) and yttria (Y2O3) or mixtures thereof. The volume resistivity of the second dielectric layer 150 may have a dielectric constant of about 10 ¹⁰ to 10 Ω㎝ resistance of ¹⁶ Ω㎝ and about 8 to 12. The second dielectric layer 150 may have a first heat transfer coefficient of about 10 W / (m · K) to 30 W / (m · K) the same as the dielectric layer 110 to prevent heat loss to the support body 140 have. Here, the second dielectric layer 150 may be attached to the support body 140 by a third bonding layer (not shown).

3 is a schematic view showing a substrate processing apparatus including the temperature-variable electrostatic chuck shown in Fig.

Referring to FIG. 3, a substrate processing apparatus 1000 according to an embodiment of the present invention includes a process chamber 200, a gas supplier 300, and a temperature variable electrostatic chuck 100.

The process chamber 200 provides a space for processing the substrate 10 to fabricate integrated circuit devices such as semiconductor devices or display devices. For example, in the process chamber 200, an etch process may be performed on the substrate 10. At this time, the inside of the process chamber 200 can be maintained in a high vacuum state so that the etching process can be performed more smoothly.

The gas supplier 300 is connected to the process chamber 200. The gas supplier 300 provides a process gas 20 for processing the substrate 10 from the outside to the interior of the process chamber 200. At this time, the gas supplier 300 may be connected to the upper part of the process chamber 200 for smooth provision.

Here, the process gas 20 may be an inert gas for generating a plasma necessary for the etching process, or a source gas for substantial etching. Meanwhile, a high frequency voltage may be applied to the gas supply unit 300 from the outside in order to generate plasma in the process chamber 200.

The temperature variable electrostatic chuck 100 is disposed inside the process chamber 200. Specifically, the electrostatic chuck 100 is disposed under the process chamber 200 to fix the substrate 10 while supporting the substrate 10.

Since the temperature variable electrostatic chuck 100 can improve heat transfer efficiency and thermal response as described with reference to FIGS. 1 and 2, the productivity and thermal durability of the substrate processing apparatus 1000 can be improved .

4 is a flowchart for explaining a method of manufacturing the electrostatic chuck shown in FIG.

Referring to FIG. 4, a method of manufacturing the electrostatic chuck 100 includes forming a ceramic thermal conductive layer 120a on which an exothermic electrode 125a is patterned (S110). The ceramic thermal conductive layer 120a includes a first surface 121 and a second surface 122 opposite to the first surface 121. [ A heating electrode 125a for generating heat for heating the substrate 10 is patterned and formed on the second surface 122 of the ceramic thermal conductive layer 120a. The patterning of the heating electrode 125a can be performed through a ceramic firing process at a high temperature of 800 DEG C or higher to enhance the tightness with the ceramic thermal conductive layer 120a. In the case of the related art in which the exothermic electrode 125a and the ceramic thermal conductive layer 120a are bonded by bonding, the heat resistance is less than 120 占 폚. However, when the ceramic ceramic firing process is integrated as in the present invention, Durability.

The heating electrode 125a may protrude from the second surface 122 to the outside of the ceramic thermal conductive layer 120a when viewed in cross section. As the manufacturing method of the heating electrode 125a, a metal paste printing method, a metal spray coating method, a metal thin film deposition method using a plasma, or the like can be applied.

In another embodiment, the heating electrode 125a may protrude from the second surface 122 of the ceramic thermal conductive layer 120b to the inside of the ceramic thermal conductive layer 120b, as shown in FIG.

Next, the ceramic thermal conductive layer 120a and the insulating layer 130a are integrated by a firing process (S120). The insulating layer 130a is formed integrally with the second surface 122 of the ceramic thermal conductive layer 120a in contact with the second surface 122a. The ceramic thermal conductive layer 120a and the insulating layer 130a may be integrated through a firing process. The firing process refers to a method of making a curable material by heating a combined raw material. That is, unlike the prior art in which each layer is bonded by bonding, the ceramic thermal conductive layer 120a is subjected to plastic working at the upper part with the heat generating electrode 125a as a center, and the insulating layer 130a is formed by plastic working.

Next, the dielectric layer 110 on which the electrostatic electrode 115 is disposed is bonded on the ceramic thermally conductive layer 120a (S130). Between the dielectric layer 110 and the ceramic thermally conductive layer 120a, a first bonding layer for bonding the first and second ceramic layers may be provided. In the dielectric layer 110, an electrostatic electrode 115 for generating an electrostatic force for fixing the substrate 10 is disposed. Here, the dielectric layer 110 in which the electrostatic electrode 115 is disposed may be prepared in advance, and the order of steps S130 and S140 may be changed as necessary.

Meanwhile, as another embodiment, the dielectric layer 110, the ceramic thermal conductive layer 120a, and the insulating layer 130a may be integrally formed through a sintering process. In this case, the dielectric layer 110 and the ceramic thermal conductive layer 120a may be made of aluminum nitride (AlN). Therefore, by integrally forming each layer without bonding, heat loss due to the bonding layer can be prevented, and heat transfer efficiency and heat responsiveness can be improved.

Next, the insulating layer 130a is bonded onto the supporting body 140 (S140). Between the insulating layer 130a and the supporting body 140, a second bonding layer may be provided. The supporting body 140 is disposed below the insulating layer 130a and serves as a pedestal for supporting the dielectric layer 110, the ceramic thermally conductive layer 120a, and the insulating layer 130a as a whole.

The temperature variable electrostatic chuck 100 may further include a second dielectric layer 150 disposed between the insulating layer 130a and the supporting body 140. [ Here, the second dielectric layer 150 may be attached to the support body 140 by a third bonding layer (not shown).

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

As described above, the heat generating electrode is patterned on one surface of the ceramic thermal conductive layer, and the insulating layer disposed under the ceramic thermal conductive layer is integrally formed with the ceramic thermal conductive layer without bonding, thereby preventing heat loss by the bonding layer, The efficiency and heat responsiveness can be improved.

Further, the ceramic thermal conductive layer and the insulating layer integrated through the firing process can secure thermal durability against the high temperature generated by the heating electrode.

Accordingly, the electrostatic chuck and the substrate processing apparatus including the electrostatic chuck can improve the productivity and the quality of the product, thereby securing the competitiveness.

10: substrate 20: process gas
100: Temperature variable electrostatic chuck 110: Dielectric layer
115: electrostatic electrodes 120a, 120b: ceramic thermal conductive layer
125a, 125b: heating electrodes 130a, 130b: insulating layer
140: support body 145: cooling channel
150: second dielectric layer
200: process chamber 300: gas supply
1000: substrate processing apparatus

Claims (15)

A dielectric layer having an electrostatic electrode for generating an electrostatic force for attracting a substrate placed thereon and having a first heat transfer coefficient;
A first surface adjacent to the dielectric layer and a second surface opposite to the first surface, wherein a heating electrode generating heat for heating the substrate is formed on the second surface by patterning, and the first heat transfer A ceramic thermal conductive layer having a second heat transfer coefficient higher than the coefficient;
An insulating layer formed integrally with and in contact with a second surface of the ceramic thermally conductive layer and having a third heat transfer coefficient lower than the first heat transfer coefficient; And
And a support body disposed below the insulating layer and having a cooling passage formed therein,
Wherein the heating electrode is formed so as to protrude toward the insulating layer outside the ceramic thermally conductive layer and the insulating layer located below the ceramic thermally conductive layer surrounds the other surface opposite to the side surface of the heating electrode,
Wherein the dielectric layer, the ceramic thermal conductive layer, and the insulating layer are integrally formed through a firing process. delete delete The temperature variable electrostatic chuck according to claim 1, further comprising a second dielectric layer provided between the insulating layer and the support body. delete delete The method according to claim 1, wherein the ceramic thermally conductive layer is made of a ceramic material containing at least one selected from the group consisting of aluminum nitride (AlN), silicon carbide (SiC), and silicon nitride (Si3N4) chuck. The temperature variable electrostatic chuck according to claim 1, wherein the ceramic thermally conductive layer has a thickness of 0.5 mm to 2 mm. The temperature variable electrostatic chuck according to claim 1, wherein the heating electrode has a thickness of 10 탆 to 300 탆. The temperature variable electrostatic chuck according to claim 1, wherein a width between the heating electrodes is 0.5 mm to 2 mm. The temperature variable electrostatic chuck according to claim 1, wherein the insulating layer is made of an amorphous glass-based material. The temperature variable electrostatic chuck according to claim 1, wherein the insulating layer has a thickness of 50 탆 to 500 탆. A process chamber for providing a space for processing the substrate;
A gas supplier coupled to the process chamber and providing a process gas for processing the substrate into the process chamber; And
And a temperature variable electrostatic chuck disposed inside the process chamber and supporting and fixing the substrate to be processed through the process gas,
The temperature variable electrostatic chuck
A dielectric layer having an electrostatic electrode for generating an electrostatic force for attracting the substrate placed thereon and having a first heat transfer coefficient;
A first surface adjacent to the dielectric layer and a second surface opposite to the first surface, wherein a heating electrode generating heat for heating the substrate is formed on the second surface by patterning, and the first heat transfer A ceramic thermal conductive layer having a second heat transfer coefficient higher than the coefficient;
An insulating layer formed integrally with and in contact with a second surface of the ceramic thermally conductive layer and having a third heat transfer coefficient lower than the first heat transfer coefficient; And
And a support body disposed below the insulating layer and having a cooling passage formed therein,
Wherein the heating electrode is formed so as to protrude toward the insulating layer outside the ceramic thermally conductive layer and the insulating layer located below the ceramic thermally conductive layer surrounds the other surface opposite to the side surface of the heating electrode,
Wherein the dielectric layer, the ceramic thermal conductive layer, and the insulating layer are integrally formed through a firing process. delete delete

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