KR101982616B1 - Methods of manufacturing graphene thin film - Google Patents

Abstract

Depositing a metal catalyst on a graphene layer of a mold for producing a graphene thin film including a substrate having a graphene layer formed on both surfaces thereof to form a metal catalyst layer; Forming a graphene thin film on a surface of the metal catalyst layer by inserting a mold for forming a graphene thin film having a metal catalyst layer into a CVD chamber and performing a CVD process; Peeling the metal catalyst layer on which the graphene thin film is formed from the mold for producing the graphene thin film; And removing the metal catalyst layer from the metal catalyst layer on which the graphene thin film is formed; A method of manufacturing a graphene thin film is provided.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a graphene thin film,

The present invention relates to a method for producing a graphene thin film. More particularly, the present invention relates to a method of manufacturing a graphene thin film having an increased production amount compared to a conventional method of manufacturing a graphene thin film.

Graphene, which is known as a new material of dream, is excellent in electrical conductivity, chemical stability, transparency and high ductility. Many studies have been conducted to commercialize such graphene, and a CVD (Chemical Vapor Deposition) method has been used to fabricate a large area. Such a CVD synthesis method uses a method in which a mixed gas of argon, hydrogen, and methane is contacted with a metal catalyst in a high-temperature chamber. According to this synthesis method, graphene is synthesized on the upper and lower surfaces of the metal catalyst, and then a large-area graphene of a single layer can be obtained by removing the graphene and the metal catalyst on one side.

However, when a single layer of graphene is to be produced by the above method, there is a troublesome process of removing graphene on one side by using oxygen plasma. At this time, there is a problem that the graphene layer to be obtained is damaged. In addition, since only one graphene layer per production process can be obtained, low productivity of such a CVD synthesis method also poses a serious problem in the industrialization of graphene.

Embodiments of the present invention provide a method of manufacturing a graphene thin film having excellent production efficiency compared to a conventional method of manufacturing a graphene thin film.

In another embodiment of the present invention, there is provided a graphene thin film which is manufactured through the above-described method for producing a graphene thin film and has excellent quality and a thin thickness.

In one embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a metal catalyst layer by depositing a metal catalyst on a graphene layer of a mold for producing a graphene thin film including a substrate having a graphene layer formed on both surfaces thereof; Forming a graphene thin film on a surface of the metal catalyst layer by inserting a mold for forming a graphene thin film having the metal catalyst layer into a CVD chamber and performing a CVD process; Peeling the metal catalyst layer on which the graphene thin film is formed from the mold for producing a graphene thin film; And removing the metal catalyst layer from the metal catalyst layer on which the graphene thin film is formed; A method of manufacturing a graphene thin film is provided.

In an exemplary embodiment, the substrate of the mold for producing a graphene film is a metal foil and the metal foil is selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), stainless steel, aluminum (Al), germanium ) And chromium (Cr).

In an exemplary embodiment, the graphene layer may be coated on the top and bottom surfaces of the substrate.

In an exemplary embodiment, the step of forming the metal catalyst layer may be performed through an electroless or electrolytic plating process.

In an exemplary embodiment, the metal catalyst layer may comprise at least one selected from the group consisting of copper, nickel, silver and gold.

In an exemplary embodiment, the metal catalyst layer may have a thickness of 10 to 50 占 퐉.

In an exemplary embodiment, the CVD process may include heat treatment at 300 to 2,000 after the gaseous carbon source is introduced into the CVD chamber in which the metal catalyst layer is present.

In an exemplary embodiment, a graphene thin film may be formed only on one side of the metal catalyst layer exposed to the outside during the CVD process.

In the exemplary embodiment, when the metal catalyst layer on which the graphene thin film is formed is peeled from the mold for producing a graphene thin film, both the graphene thin film and the metal catalyst layer are peeled from the mold for producing the graphene thin film, May be peeling off with a tweezers or an adhesive.

In an exemplary embodiment, the step of peeling the metal catalyst layer under the graphene thin film from the graphene thin film includes: forming a polymer protective layer on the graphene thin film; Removing the metal catalyst layer through a metal dissolving agent; And removing the polymer protective layer formed on the graphene thin film.

In an exemplary embodiment, two or more graphene films may be fabricated through the method of making the graphene film.

In another embodiment of the present invention, there is provided a graphene thin film produced by the method for producing the graphene thin film.

In an exemplary embodiment, the graphene thin film may have a thickness of 0.34 nm to 1000 nm.

In an exemplary embodiment, the graphene thin film may have a thickness of 0.34 nm to 100 nm.

According to the method for producing a graphene thin film of the present invention, a graphene thin film is formed on a metal catalyst layer on both sides of a mold for producing a graphene thin film, and the resultant graphene thin film is peeled off from a mold for producing a graphene thin film together with a metal catalyst layer Therefore, it is possible to increase the production amount twice as much by using the existing CVD process conditions as it is.

In addition, since the graphene thin film is formed only on a single surface of the metal catalyst layer, an additional process is not required, thereby simplifying the process. The manufacturing method of the graphene thin film may have a productivity twice as high as that of the conventional method. In addition, since the mold can be reused after peeling off the metal catalyst layer on which the graphene thin film is formed from the mold, the cost can be reduced and the final product can be made cost competitive.

In addition, according to the method for producing a graphene thin film, a large-area graphene thin film having a small thickness can be manufactured, and the graphene thin film can be repeatedly manufactured.

FIG. 1 schematically shows a method of manufacturing a graphene thin film according to an embodiment of the present invention.
FIGS. 2A and 2B are photographs showing the middle part of the process of peeling the metal catalyst layer on which the graphene thin film is synthesized on both sides of the mold for producing a graphene thin film according to an embodiment of the present invention.
Fig. 3 is a photograph of a metal catalyst layer on which graphene is formed. The center is a mold for manufacturing a graphene thin film, and the graphene formed metal catalyst layers on the left and right sides are produced.
4 is a SEM photograph showing the surface of a single layer of a graphene thin film.
FIG. 5 is a graph showing the graphene layer existing on the upper and lower ends of the mold for producing a graphene thin film and the graphene formed on the metal catalyst layer formed by the electrolytic plating method through Raman spectroscopy.
6 is an SEM photograph showing the graphene layer on the surface of the mold for producing a graphene thin film after the copper catalyst layer is peeled off.

As used herein, the term "graphene layer" means a graphene layer formed on a substrate as a component of a mold for producing a graphene thin film.

As used herein, the term "graphene thin film" means a graphene layer synthesized by a chemical vapor deposition (CVD) process using the mold for producing the graphene thin film, and means a graphene layer having a thin thickness do.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is to be understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention.

In one embodiment of the present invention, there is provided a method of manufacturing a graphene thin film, comprising: forming a metal catalyst layer on a graphene layer of a mold for producing a graphene thin film, the graphene layer including a substrate on both surfaces; Forming a graphene thin film on a surface of the metal catalyst layer by inserting a mold for forming a graphene thin film having the metal catalyst layer into a CVD chamber and performing a CVD process; Peeling the metal catalyst layer on which the graphene thin film is formed from the mold for producing a graphene thin film; And removing the metal catalyst layer from the metal catalyst layer on which the graphene thin film is formed; A method of manufacturing a graphene thin film is provided.

Hereinafter, each step will be described in detail with reference to FIG.

First, a metal catalyst layer is formed on a graphene layer of a mold for producing a graphene thin film including a substrate having a graphene layer formed on both surfaces thereof.

In an exemplary embodiment, the mold for producing a graphene thin film may include a substrate and a graphene layer formed on both sides of the substrate.

The substrate can function as a mold that determines the shape of the formed graphene thin film, and its shape is not limited and can be manufactured in various shapes.

In an exemplary embodiment, the substrate may comprise a material such as metal, ceramic, quartz or the like, but specifically including a metal is preferred for durability and uniformity.

In one embodiment, the substrate may be a metal foil, wherein the metal foil is selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), stainless steel, aluminum (Al), germanium (Ge) ≪ RTI ID = 0.0 > and / or < / RTI >

In one embodiment, the substrate may have a thickness of 10 to 50 cm and may be fabricated to have a width of 1 mm to 10 m X 1 mm to 10 m (width X length).

In one embodiment, the graphene layer may be formed on the upper and lower surfaces of the substrate. Specifically, the graphene layer may be formed on the upper and lower surfaces of the substrate.

Meanwhile, the metal catalyst layer may be formed on the graphene layer of the mold for producing graphene, for example, by an electroless plating process or a plating process.

Through the above-described process, the metal catalyst layer can be formed by nucleating the plating particles on the graphene layer.

In addition, since the graphene layer is formed on the upper and lower surfaces of the substrate, a metal catalyst layer may be formed on each of the graphene layer formed on the upper surface of the substrate and the graphene layer formed on the lower surface of the substrate. That is, a metal catalyst layer may be formed on the top and bottom surfaces of the mold for producing the graphene thin film.

In an exemplary embodiment, the metal catalyst layer may be made to have a thickness of 10 [mu] m to 1 mm. When the metal catalyst layer is formed to have a thickness of less than 10 탆, synthesis of graphene is not easy. If the metal catalyst layer is more than 1 mm, it may take too long to remove the metal catalyst layer in the future, .

Next, a mold for forming a graphene film having the metal catalyst layer formed therein is inserted into a CVD chamber, and a CVD process is performed to form a graphene thin film on the surface of the metal catalyst layer.

 That is, when the gaseous carbon source in the chamber in which the metal catalyst layer is present is supplied at a vacuum or an atmospheric pressure and heat-treated at a predetermined temperature for a predetermined time, the carbon components present in the gaseous carbon source combine with each other to form hexagonal plate- Graphene is formed while forming the structure, and the graphene thin film having a uniform arrangement state can be obtained on the metal catalyst layer by cooling it at a predetermined cooling rate.

At this time, the metal catalyst layer functions to help the carbon components provided from the carbon source by bonding with the carbon source to form a hexagonal plate-like structure.

Carbon can be supplied as a carbon source in the process of forming the graphene thin film, and can be used without any particular limitation as long as it can be present in a gas phase at a temperature of 300 or more. The gaseous carbon source may be a compound containing carbon, preferably a compound having 6 or less carbon atoms, more preferably a compound having 4 or less carbon atoms, and more preferably a compound having 2 or less carbon atoms.

In one embodiment, the gaseous carbon source may be, for example, a group comprising carbon monoxide, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene and toluene May be used.

Meanwhile, it is preferable that the carbon source is introduced into the chamber at a constant pressure. In the chamber, the carbon source alone may be present or may be present together with an inert gas such as helium, argon, or the like.

In addition, hydrogen may be used in addition to the gaseous carbon source. Hydrogen may be used to keep the surface of the metal catalyst layer clean to control the gas phase reaction, and may be used in an amount of 5 to 40% by volume, preferably 10 to 30% by volume, more preferably 15 to 25% % ≪ / RTI >

When the gaseous carbon source is introduced into the chamber where the metal catalyst layer is present and then heat-treated at a predetermined temperature, a graphene thin film is formed on the surface of the metal catalyst layer. The heat treatment temperature is an important factor in the formation of the graphene thin film. For example, the heat treatment temperature may be 300 to 2,000 or 500 to 1,500.

On the other hand, it is possible to control the degree of formation of the graphene thin film by holding the annealing for a predetermined time at the predetermined temperature. That is, when the heat treatment process is maintained for a long time, the amount of graphene produced increases, so that the thickness of the resultant graphene thin film can be increased, and if the heat treatment process is shorter than that, the thickness of the resulting graphene thin film is reduced. Therefore, in order to obtain the desired thickness of the single-layer graphene, the maintenance time of the heat treatment process may be an important factor in addition to the kind of the carbon source, the supply pressure, the type of the conductive substrate, and the size of the chamber. The holding time of such a heat treatment process can be maintained, for example, for 0.001 to 1,000 hours.

As the heat source for the heat treatment, induction heating, radiant heat, laser, IR, microwave, plasma, UV, surface plasmon heating and the like can be used without restriction. Such a heat source is attached to the chamber and functions to raise the temperature inside the chamber to a predetermined temperature.

After the heat treatment as described above, the heat treatment result is subjected to a predetermined cooling process. Such a cooling process is a process for uniformly growing the formed graphene thin film so as to be uniformly arranged, and rapid cooling may cause cracking of the resulting graphene thin film, so that it is preferable to cool it gradually at a constant rate For example, cooling at a rate of 0.1 to 10 per minute, and it is also possible to use a method such as natural cooling.

In one embodiment, the natural cooling is simply a removal of the heat source used for the heat treatment, and it is possible to obtain a sufficient cooling rate even by the removal of such a heat source.

The heat treatment and cooling process as described above can be performed in a one-cycle process, but it is also possible to produce a graphene thin film having a dense structure by repeating this process.

Through this process, graphene may be synthesized in the metal catalyst layer to form a graphene thin film.

On the other hand, when the CVD process is performed, a graphene thin film is formed only on one side of the metal catalyst layer exposed to the outside. That is, since a metal catalyst layer is formed on the upper and lower surfaces of the mold for producing a graphene thin film and the metal catalyst layer is exposed to the outside, a graphene thin film is formed on the metal catalyst layer formed on the upper and lower surfaces of the mold for producing the graphene thin film .

In one embodiment, since the metal catalyst layer is formed on the top and bottom surfaces of the mold for producing a graphene thin film, the graphene thin film may be formed on the metal catalyst layer formed on the upper and lower surfaces of the mold for manufacturing the graphene thin film, respectively .

Then, the metal catalyst layer on which the graphene thin film is formed is peeled off from the mold for producing a graphene thin film (FIGS. 2A and 2B).

Specifically, when the metal catalyst layer on which the graphene thin film is formed is peeled off from the mold for producing a graphene thin film, peeling is possible simply by using a weak mechanical force without any process. For example, a force can be exerted by using a tweezers or an adhesive to a local part. At this time, the bonding force between the graphene layer and the metal catalyst layer on the substrate for producing a graphene thin film is very simple and can be easily peeled off because it is formed only by weak van der Waals force.

In this case, the yes 1 to 500 N / m when separated from the pin thin film is a metal catalyst layer for graphene thin film for producing a mold is formed ^- can be peeled off by applying a force of the ^first range, in particular from 50 to 250 N / ^m-1 It is possible to peel off by applying a force in the range. Since the adhesive force between the metal catalyst formed by electrolytic plating on the graphene and the graphenes is less than about 10 N / m ^-1 , the peeling can be very easily performed even with a very small force.

Since the metal catalyst layer having the graphene thin film formed on both surfaces of the substrate for producing a graphene thin film is separated from the substrate for producing the graphene thin film by separating the metal catalyst layer from the substrate for producing the graphene thin film, A metal catalyst layer formed on both surfaces of the pin thin film and a graphene thin film) can be obtained.

Thereafter, the catalyst layer is removed from each of the metal catalyst layers on which the graphene thin film is formed to produce a pure graphene thin film.

Specifically, the step of peeling the metal catalyst layer under the graphene thin film from the graphene thin film includes: forming a polymer protective layer on the graphene thin film; Removing the metal catalyst layer through a metal dissolving agent; And removing the polymer protective layer formed on the graphene thin film.

In one embodiment, the polymer protective layer is not limited as long as it can protect the graphene thin film from a metal dissolvent, but may include, for example, PMMA.

The metal dissolving agent may be any substance having a metal solubility in an acidic group having a pH of 7 or less. Among them, a sulfate-based substance such as ammonium persulfate or a fluoroborate-based substance such as ammonium persulfate Can be used easily.

When the polymer protective layer is removed from the graphene thin film, it may be removed using an organic detergent such as acetone or chlorobenzene, or may be removed through a pyrolysis process within a temperature range of 200 to 500 ° C.

On the other hand, since the set of the metal catalyst layer on which two graphene thin films are formed (i.e., the metal catalyst layer and the graphene thin film formed on both surfaces of the graphene thin film) are peeled off from the mold for producing the graphene thin film through the above- Two pure graphene thin films can be obtained.

Accordingly, a graphene thin film having a thickness of 0.34 nm can be produced, and a graphene thin film having a thickness up to 1000 nm can be produced.

On the other hand, two or more graphene thin films can be produced through the single process described above, thereby improving the process efficiency compared to the conventional process.

Further, since graphene thin films are formed on both surfaces of a copper catalyst when graphene is synthesized by CVD on a common copper catalyst, the graphene thin film on one side must necessarily be removed in order to obtain a pure graphene thin film.

At this time, in order to remove the graphene thin film on one side, a protective polymer material should be cured by spin coating on the surface of the opposite graphene thin film. In this case, do. Then, the graphene thin film formed with the polymer material is sealed once again with a thick support to protect the graphene thin film. Once the graphene thin film is sealed, the one graphene thin film is sealed to the polymer material and the support, Is exposed to the atmosphere. Thereafter, the exposed surface of the graphene thin film was removed using a plasma etching equipment RIE (Reactive Ion Etching). When the exposed graphene film was removed, the encapsulated support was removed and a metal dissolving agent The catalyst layer may be removed to obtain a single-layered graphene thin film. However, if the opposite graphene film to be obtained is not completely sealed, the graphene film on the opposite side may be damaged, and further additional steps for obtaining a graphene film are complicated, which is not preferable from a cost point of view .

On the other hand, according to the method of manufacturing a graphene thin film according to an embodiment of the present invention, a pure graphene thin film can be obtained by removing the catalyst layer immediately after the formation of the graphene thin film formed on the metal catalyst, A thin film of a graphene thin film can be obtained. According to the method for producing a graphene thin film of the present invention, a graphene single layer thin film of excellent quality can also be obtained.

As a result, a graphene thin film having excellent quality can be produced by a simpler process.

Hereinafter, the present invention will be described in more detail with reference to Examples. It is to be understood by those skilled in the art that these embodiments are only for illustrating the present invention and that the scope of the present invention is not construed as being limited by these embodiments.

Example

[Example 1]

A mold for preparing a graphene film having a size of 4 cm in width, 6 cm in length, and 35 탆 in thickness and made of a copper foil coated with graphene on all surfaces is prepared. The prepared mold was subjected to copper electrolytic plating to form a metal catalyst layer having a thickness of 25 mu m. The composition of the proceeding copper electrolytic solution was as shown in Table 1 below, and was performed under the conditions of current density 3A / dm ² , roll rotation speed 0.1 rpm, air agitation, and room temperature.

ingredient density Copper sulfate 220g / L Sulfuric acid 60g / L Chlorine ion 0.01% Organic polish 5 mL / L

Thereafter, a mold having a metal catalyst layer was loaded in a CVD chamber to synthesize graphene to form a graphene thin film. The graphene was synthesized through reaction conditions of 30 sccm of methane gas, 3 sccm of hydrogen, 1000 캜 of temperature, 1.0 mtorr of pressure, methane gas supply time of 30 minutes, and natural cooling.

Thereafter, the metal catalyst layer on which the graphene thin film was formed was peeled off from the mold for producing a graphene thin film. The graphene thin film was formed only on one side of the metal catalyst layer and separated from both sides of the mold to obtain two graphene thin films. PMMA was applied as a protective member to the surface on which the graphene thin film was formed, and then the metal catalyst layer formed on the lower part of the graphene thin film was removed using a metal dissolving agent to obtain two graphene thin films each being a single graphene layer.

[Comparative Example 1]

A copper catalyst having a size of 4 cm in width, 6 cm in length, and 35 탆 in thickness is prepared. The prepared copper catalyst was loaded into a CVD chamber to synthesize graphene to prepare a graphene thin film. The graphene was formed through reaction conditions of 30 sccm of methane gas, 3 sccm of hydrogen, 1000 캜 of temperature, 1.0 mtorr of pressure, methane gas supply time of 30 minutes, and natural cooling.

Thereafter, a copper catalyst having graphene formed on a PET having a size of 6 cm in width, 8 cm in length, and 0.1 mm in thickness was loaded and the 4 sides were tapped, and PMMA was applied as a protective material to the surface of the exposed graphene. , The PET having the same size as described above was inverted and the four sides were taped.

Thereafter, the exposed graphene was etched using RIE equipment to obtain a copper catalyst having only graphene on one side.

Thereafter, the copper catalyst layer was removed using a copper etchant to obtain a single-layer graphene thin film.

[Experimental Example 1]

The characteristics of the graphene thin film formed on the metal catalyst layer formed by copper electroplating were evaluated. first. It was confirmed that the graphene thin film and the mold produced through Example 1 were able to be obtained, and it was confirmed that two graphene thin films were obtained through Example 1, and the quality was also judged visually excellent. In addition, the surface of the graphene thin film produced through Example 1 was examined by SEM and is shown in FIG. It was confirmed that the graphene thin film completely covered the copper catalyst layer because the wrinkle unique to graphene was confirmed and the graphene pinned hole was not formed and the complete layer was formed.

[Experimental Example 2]

The graphene layer on the surface of the mold for forming a graphene thin film after peeling off the graphene thin film and the copper catalyst layer formed on the catalyst layer formed by copper electrolytic plating was examined by Raman spectroscopy and is shown in FIG. The graphene layer on the surface of the mold for producing a graphene thin film after peeling off the copper catalyst layer was observed with a microscope and is shown in Fig. It was confirmed that the graphene thin film formed on the copper catalyst layer was well formed as a single layer, and that the quality thereof was excellent. Also, it was confirmed that the graphene layer existing on the surface of the mold after peeling was present on the surface of the mold without any change in graphene even after peeling. As a result, it was confirmed that the graphene thin film and the copper catalyst layer were very clean and peeled off from the mold for producing a graphene thin film.

The embodiments of the present invention described above should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of protection of the present invention as long as it is obvious to those skilled in the art.

Claims (14)

Depositing a metal catalyst on a graphene layer of a mold for producing a graphene thin film including a substrate having a graphene layer formed on upper and lower surfaces of a substrate, respectively, to form a metal catalyst layer on the upper and lower surfaces of the mold for producing the graphene thin film;
A mold for forming a graphene thin film on which the metal catalyst layer is formed is inserted into a chemical vapor deposition (CVD) chamber and then a CVD process is performed to form a metal catalyst layer on the surface of the metal catalyst layer formed on the upper and lower surfaces of the mold Forming a graphene thin film, respectively;
Peeling the metal catalyst layer on which the graphene thin film is formed from the mold for producing a graphene thin film; And
Removing the metal catalyst layer from the metal catalyst layer on which the graphene thin film is formed; / RTI >
Wherein at least two graphene thin films are produced per mold for producing a graphene thin film through the method of manufacturing the graphene thin film. The method according to claim 1,
Wherein the substrate of the mold for producing a graphene thin film is a metal foil,
The metal foil may be a graphene thin film including at least one selected from the group consisting of copper (Cu), nickel (Ni), iron (Fe), stainless steel, aluminum (Al), germanium (Ge) Gt; The method according to claim 1,
Wherein the graphene layer is coated on upper and lower surfaces of the substrate. The method according to claim 1,
Wherein the forming of the metal catalyst layer is performed through an electroless or electrolytic plating process. The method according to claim 1,
Wherein the metal catalyst layer comprises at least one selected from the group consisting of copper, nickel, silver and gold. The method according to claim 1,
Wherein the metal catalyst layer has a thickness of 10 to 1 mm. The method according to claim 1,
Wherein the CVD process comprises applying a gaseous carbon source into a CVD chamber in which the metal catalyst layer is present, and then thermally treating the gas source at 300 to 2,000. The method according to claim 1,
Wherein a graphene thin film is formed only on one side of the metal catalyst layer exposed to the outside during the CVD process. The method according to claim 1,
When the metal catalyst layer on which the graphene thin film is formed is peeled from the mold for producing a graphene thin film, both the graphene thin film and the metal catalyst layer are peeled off from the mold for producing the graphene thin film,
Wherein the metal catalyst layer on which the graphene thin film is formed is peeled off using a tweezers or an adhesive. The method according to claim 1,
The step of removing the metal catalyst layer under the graphene thin film from the graphene thin film includes:
Forming a polymer protective layer on the graphene thin film;
Removing the metal catalyst layer through a metal dissolving agent; And
Removing the polymer protective layer formed on the graphene thin film; Wherein the graphene thin film has a thickness of 100 nm or less. delete A graphene thin film produced by the method for producing a graphene thin film according to any one of claims 1 to 10. 13. The method of claim 12,
Wherein the graphene thin film has a thickness of 0.34 nm to 1000 nm. 13. The method of claim 12,
Wherein the graphene thin film has a thickness of 0.34 nm to 100 nm.

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