KR102044137B1 - Organic electro luminescent device and method of fabricating the same - Google Patents

Abstract

The present invention provides a display device comprising: a first substrate on which a display area having a plurality of pixel areas is defined; A first electrode formed on each of the pixel areas on the first substrate; A bank overlapping an edge of each of the first electrodes and having a first height in the display area and surrounding each pixel area; An organic emission layer formed on each of the first electrodes surrounded by the banks; A second electrode formed on the organic light emitting layer, the first electrode having a first thickness on the entire display area, and configured to protrude from a portion corresponding to the bank; An organic light emitting device having a second thickness and comprising an auxiliary line selectively formed corresponding to a portion protruding by the bank and having a second thickness between the bank and the second electrode or over the second electrode, and a method of manufacturing the same. To provide.

Description

Organic electroluminescent device and method of manufacturing the same {Organic electro luminescent device and method of fabricating the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic electroluminescent device, and more particularly, to an organic electroluminescent device and a method of manufacturing the same, which can improve the transmittance of a cathode electrode while maintaining low resistance in a top emitting structure. .

Organic light emitting diodes, which are one of flat panel displays (FPDs), have high luminance and low operating voltage characteristics. In addition, the self-luminous self-illuminating type provides high contrast ratio, enables ultra-thin display, easy response time with several microsecond response time, no restriction on viewing angle, and stable at low temperatures. Since it is driven at a low voltage of 5 to 15V DC, it is easy to manufacture and design a driving circuit.

In addition, the manufacturing process of the organic light emitting device is very simple because the deposition (deposition) and encapsulation (encapsulation) equipment is all.

Therefore, the organic light emitting device having the above-described advantages has been recently used in various IT devices such as TVs, monitors, and mobile phones.

Hereinafter, the basic structure of the organic EL device will be described in more detail.

The organic light emitting device is largely composed of an array device and an organic light emitting diode. The array element includes a switching thin film transistor connected to a gate and a data line, and a driving thin film transistor connected to the organic light emitting diode. The organic light emitting diode includes a first electrode, an organic light emitting layer, and a second electrode connected to the driving thin film transistor. It consists of electrodes.

In the organic light emitting device having such a configuration, light generated from the organic light emitting layer is emitted toward the first electrode or the second electrode to display an image. Such an organic light emitting device is manufactured by a top emission method of displaying an image by using light emitted toward the second electrode in consideration of an aperture ratio and the like.

However, due to the manufacturing characteristics of the organic light emitting device, the second electrode located above the organic light emitting layer cannot be formed by sputtering, which is a deposition method of a general metal material, to prevent damage to the organic light emitting layer, and thus almost no damage to the organic light emitting layer. It is the situation formed by vacuum heat vapor deposition which is not known.

Meanwhile, the first electrode is made of indium tin oxide (ITO), a transparent conductive material having a high work function value to serve as an anode electrode, and the second electrode has a low work function value to serve as a cathode electrode. It is made of metal material.

However, since the metal material having a low work function value constituting the second electrode serving as a cathode electrode has an opaque property, when the opaque metal is formed to have a general electrode thickness, that is, a thickness of 1000 kPa to 4000 kPa Light cannot penetrate.

Therefore, in order to secure transparency, the second electrode having a low work function value and an opaque metal material is formed to have a thickness of about 10 kPa to about 200 kPa.

In this case, since the light transmittance of the second electrode is 15% or more, the luminance level of the general display device is increased.

However, when the second electrode is formed to have a thickness of about 10 k? To 200 k ?, the sheet resistance is 20 k? /? To 1000 k? / ?, and in this case, the sheet resistance of the second electrode itself is high, so that the voltage drop value for each position is different. As a result, a luminance non-uniformity phenomenon finally occurs, causing a problem of degrading display quality of the organic light emitting diode.

In addition, since the driving voltage of the organic light emitting device itself is relatively increased due to the high area term of the second electrode, power consumption increases per unit time, thereby causing a rapid battery consumption when applied to a personal portable IT device. Is occurring.

The present invention has been made to solve the above problems, in the organic light emitting device of the top emission method is formed on the organic light emitting layer above the organic light emitting layer to lower the resistance of the second electrode acting as a cathode electrode and at the same time improve the transmittance An object of the present invention is to provide an electroluminescent device and a method of manufacturing the same.

An organic light emitting display device according to an embodiment of the present invention for achieving the above object comprises: a first substrate on which a display area having a plurality of pixel areas is defined; A first electrode formed on each of the pixel areas on the first substrate; A bank overlapping an edge of each of the first electrodes and having a first height in the display area and surrounding each pixel area; An organic emission layer formed on each of the first electrodes surrounded by the banks; A second electrode formed on the organic light emitting layer, the first electrode having a first thickness on the entire display area, and configured to protrude from a portion corresponding to the bank; And an auxiliary line having a second thickness and selectively formed corresponding to a portion protruded by the bank between the bank and the second electrode or over the second electrode.

In this case, the first electrode is characterized by forming a double layer structure of a lower layer made of a reflective metal material and an upper layer made of a transparent conductive material.

The second electrode may be a metal material having a work function value smaller than that of the first electrode, such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), or aluminum magnesium alloy ( AlMg), one or two or more of the materials, and the auxiliary wiring is a conductive material having a low resistance characteristics of aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au), silver ( Ag) is characterized in that it is made of any one material.

The first height is 1 to 10 µm, the first thickness is 10 to 200 µs, and the second thickness is 1000 to 4000 µs.

In addition, the auxiliary line extends to the non-display area outside the display area to form a configuration connected to the Vss wire for applying the signal voltage.

On the other hand, a gate and a data line below the first electrode and on the first substrate to define the pixel area crossing each other; A power supply wiring formed on the same layer on which the gate wiring or data wiring is formed and spaced apart from the wiring; A switching thin film transistor provided in each pixel area and connected to the gate line and the data line, and a driving thin film transistor connected to the power line and the switching thin film transistor; A protective layer formed over the display area to cover the switching and driving thin film transistor and to expose a drain electrode of the driving thin film transistor, wherein the first electrode is disposed in the pixel area over the protective layer. It is formed in contact with the drain electrode.

In addition, a second substrate facing the first substrate may be provided, or an encapsulation film serving as the second substrate may be in contact with the auxiliary wiring and the second electrode and cover the entire surface of the display area. It is characterized by the provision.

According to one or more exemplary embodiments, a method of manufacturing an organic light emitting display device includes: forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined; Forming a bank in the display area, the bank overlapping an edge of the first electrode and having a first height and surrounding the pixel area; Forming an organic emission layer on each of the first electrodes surrounded by the banks; Forming a second electrode having a first thickness on the organic light emitting layer, the second electrode being formed on the entire surface of the display area without any break, and having a portion protruding from the bank; And selectively forming an auxiliary line in correspondence with a portion having a second thickness over the second electrode and protruding from the bank.

At this time, the step of selectively forming the auxiliary wiring corresponding to the portion protruding by the bank and having a second thickness over the second electrode, the printing roll having a blanket on the stage and its surface and the conductive ink on the printing roll Mounting a substrate on which the second electrode is formed on the stage of the roll coating apparatus configured to supply ink; Coating a conductive ink in a liquid state on the entire surface of the blanket to form a conductive ink layer; While advancing the stage in one direction, the blanket is rotated in one direction according to the advancing speed of the stage so that the conductive ink layer is brought into contact with the protruding portions of the second electrode and the second electrode. Transferring to a protruding portion of the substrate; And forming the auxiliary line by heat treating and curing the conductive ink pattern transferred onto the second electrode.

According to still another aspect of the present invention, there is provided a method of manufacturing an organic light emitting display device, including: forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined; Forming a bank in the display area, the bank overlapping an edge of the first electrode and having a first height and surrounding the pixel area; Forming an organic emission layer on each of the first electrodes surrounded by the banks; Forming a second electrode on the organic light emitting layer, the second electrode having a first thickness over the organic light emitting layer, and having a second thickness on top of the bank selectively only before forming the organic light emitting layer. It is characterized by further proceeding to form the wiring.

And selectively forming the auxiliary wiring having a second thickness thereon only for the bank, the roll comprising a stage, a printing roll having a blanket on the surface thereof, and an ink supply slit for supplying conductive ink to the printing roll. Mounting a substrate on which said bank is formed on said stage of a coating apparatus; Coating a conductive ink in a liquid state on the entire surface of the blanket to form a conductive ink layer; The conductive ink layer is brought into contact with the upper surface of the bank by contacting the conductive ink layer with the upper surface of the bank by advancing the stage in one direction and rotating the blanket in one direction at a traveling speed of the stage. Transferring to an upper surface; And forming the auxiliary line by heat treating and curing the conductive ink pattern transferred to the upper surface of the bank.

On the other hand, the conductive ink has a size of several to several tens of nanometers made of any one of a conductive material of aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au), silver (Ag). It is characterized by consisting of a plurality of particles and the solvent, the first height is 1 to 10㎛, the first thickness is 10 to 200Å, the second thickness is characterized in that 1000 to 4000Å.

And before forming the first electrode, the gate and data lines defining the pixel area crossing each other on the first substrate, the power lines formed on the same layer on which the gate lines or data lines are formed, A switching thin film transistor provided in the pixel area, connected to the gate wiring and data wiring, a driving thin film transistor connected to the power supply wiring and the switching thin film transistor, and covering the switching and driving thin film transistor on the entire display area. Further, forming a protective layer having a drain contact hole exposing the drain electrode of the transistor, wherein the first electrode is a drain electrode of the driving thin film transistor through the drain contact hole in each pixel region over the protective layer It is characterized by forming in contact with .

In the organic light emitting device according to the present invention, the top light emitting organic light emitting device is a low metal material having a relatively low work function value to ensure transparency by forming a cathode electrode having a thickness of about 10 ~ 200Å, Furthermore, since the auxiliary wiring formed of a metal material having a low resistance characteristic having a lattice shape on the front of the display area is formed by overlapping a bank on the cathode electrode corresponding to the entire surface of the display area, the resistance characteristic of the cathode electrode itself is reduced. In addition, it is possible to suppress the voltage drop per position and to suppress the luminance unevenness due to the voltage drop, thereby improving the display quality.

1 is a circuit diagram of one pixel of a general organic light emitting diode.
2 is a cross-sectional view of a portion of a display area of an organic light emitting diode according to a first exemplary embodiment of the present invention.
3 is a cross-sectional view of a driving thin film transistor in an organic light emitting diode according to a modification of the first exemplary embodiment of the present invention.
4 is a cross-sectional view of a driving thin film transistor in an organic light emitting diode according to still another modification of the first exemplary embodiment of the present invention;
5 is a plan view schematically showing a planar configuration of an organic light emitting device according to a first embodiment of the present invention.
6 is a plan view schematically showing the configuration of a conventional organic light emitting device without an auxiliary electrode as a comparative example.
7A to 7H are process steps for manufacturing an organic light emitting diode according to a first embodiment of the present invention.
FIG. 8 schematically illustrates a roll coating apparatus used to manufacture organic electroluminescent devices according to first and second embodiments of the present invention. FIG.
9 is a cross-sectional view of a part of a display area of an organic light emitting diode according to a second exemplary embodiment of the present invention.
10A through 10E are cross-sectional views illustrating manufacturing steps of an organic light emitting diode according to a second exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

First, the basic structure and operation characteristics of the organic light emitting device will be described in detail with reference to the drawings.

1 is a circuit diagram of one pixel of a general organic light emitting diode.

As illustrated, each pixel defined as an area surrounded by gate wiring and data wiring in the organic light emitting diode includes the gate wiring, the data wiring, the power wiring, the switching thin film transistor STr, and the driving. A thin film transistor DTr, a storage capacitor StgC, and an organic light emitting diode E are included.

The structure of the organic light emitting diode will be described in more detail. The gate line GL is formed in a first direction, and is formed in a second direction crossing the first direction to define each pixel area P. FIG. The data line DL is formed, and the power line PL is spaced apart from the data line DL to apply a power voltage.

In addition, a switching thin film transistor STr is formed at a portion where the data line DL and the gate line GL intersect within each pixel, and a driving thin film transistor STr electrically connected to the switching thin film transistor STr. DTr) is formed.

In this case, the first electrode, which is one terminal of the organic light emitting diode E, is connected to the drain electrode of the driving thin film transistor DTr, and the second electrode, which is the other terminal, is connected to the power line PL. As a result, the power line PL transfers a power supply voltage to the organic light emitting diode E.

In addition, a storage capacitor StgC is formed between the gate electrode and the source electrode of the driving thin film transistor DTr.

Therefore, when a signal is applied through the gate line GL, the switching thin film transistor STr is turned on, and the signal of the data line DL is transferred to the gate electrode of the driving thin film transistor DTr. Since the driving thin film transistor DTr is turned on, light is output through the organic light emitting diode E.

At this time, when the driving thin film transistor DTr is in an on state, the level of the current flowing from the power supply line PL to the organic light emitting diode E is determined, and thus, the organic light emitting diode E It is possible to implement gray scale.

In addition, the storage capacitor StgC serves to maintain a constant gate voltage of the driving thin film transistor DTr when the switching thin film transistor STr is turned off, so that the switching thin film transistor STr is turned off. Even in the off state, the level of the current flowing through the organic light emitting diode E can be kept constant until the next frame.

Hereinafter, the configuration of the organic light emitting device according to the embodiment of the present invention for displaying an image by such driving will be described.

2 is a cross-sectional view of a part of a display area of an organic light emitting diode according to a first exemplary embodiment of the present invention. In this case, for convenience of description, a region in which the switching thin film transistor is to be formed in each pixel region is defined as a switching region and a region in which the driving thin film transistor is to be formed as a driving region, and the driving thin film transistor is formed for each pixel region. Only one pixel area is shown.

As illustrated, the organic light emitting diode 101 according to the first exemplary embodiment of the present invention includes a driving and switching thin film transistor DTr (not shown) and an organic light emitting diode E and are disposed in the display area AA. The first substrate having the auxiliary wiring 168 formed of a metal material having a low resistance characteristic in a lattice shape along a boundary on each pixel region P above the second electrode 158 of the organic light emitting diode E And a second substrate 170 for encapsulation and protection of the organic light emitting diode E. In this case, the second substrate 170 may be replaced with an inorganic insulating film and / or an organic insulating film, or may be omitted by attaching a film.

First, the configuration of the first substrate 110 including the driving and switching thin film transistor DTr (not shown) and the organic light emitting diode E will be described.

The first substrate 110 is formed of pure polysilicon in each pixel region P, and a central portion of the first substrate 113a is doped with a high concentration of impurities on both sides of the first region 113a and the first region 113a. The semiconductor layer 113 including the second region 113b is formed.

A buffer layer (not shown) made of an inorganic insulating material, for example, silicon oxide (SiO ₂ ) or silicon nitride (SiNx) may be further formed between the semiconductor layer 113 and the first substrate 110.

The buffer layer (not shown) is to prevent deterioration of the characteristics of the semiconductor layer 113 due to the release of alkali ions from the inside of the first substrate 110 when the semiconductor layer 113 is crystallized.

In addition, a gate insulating layer 116 is formed on the entire surface of the semiconductor layer 113, and the gate electrode 116 is formed on the gate insulating layer 116 to correspond to the first region 113a of the semiconductor layer 113. 120 is formed.

The gate insulating layer 116 is connected to a gate electrode (not shown) of the switching thin film transistor (not shown) and extends in one direction to form a gate wiring (not shown). In this case, the gate electrode 120 and the gate wiring (not shown) constituting the driving and switching thin film transistor DTr (not shown) may be formed of a metal material having low resistance, for example, aluminum (Al), aluminum alloy ( AlNd), copper (Cu), copper alloy, molybdenum (Mo), molybdenum alloy (MoTi) of any one or two or more of the materials to form a single layer or multilayer structure.

In addition, an interlayer insulating layer 123 is formed on the entire surface of the gate electrode 120 and the gate line (not shown). In this case, the interlayer insulating layer 123 and the gate insulating layer 116 thereunder are formed with a semiconductor layer contact hole 125 exposing each of the second regions 113b located on both sides of the first region 113a. .

Next, a data line 130 is formed on the interlayer insulating layer 123 including the semiconductor layer contact hole 125 to define each pixel region P by crossing the gate line (not shown).

In addition, the driving area DA and the switching area (not shown) may be spaced apart from each other on the interlayer insulating layer 123 and contact the second area 113b exposed through the semiconductor layer contact hole 125. And drain electrodes 133 and 136 are formed.

In this case, the semiconductor layer 113 including the source and drain electrodes 133 and 136, the second region 113b in contact with the electrodes 133 and 136, and a gate formed on the semiconductor layer 113. The insulating layer 116 and the gate electrode 120 form a driving thin film transistor DTr and a switching thin film transistor (not shown), respectively.

The source and drain electrodes 133 and 136 spaced apart from the data line 130 are also metal materials having low resistance characteristics, such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), copper alloy, and molybdenum. (Mo), molybdenum alloy (MoTi) of any one or two or more materials to form a single layer or multi-layer structure.

The switching thin film transistor (not shown) is electrically connected to the driving thin film transistor DTr, the gate line (not shown), and the data line 130, and the data line 130 is the switching thin film transistor ( The driving thin film transistor DTr is connected to the power line (not shown) and the organic light emitting diode E.

In the organic light emitting diode 101 according to the first embodiment of the present invention, the driving thin film transistor DTr and the switching thin film transistor (not shown) have a semiconductor layer 113 of polysilicon and have a top gate type (Top gate). type), the driving and switching thin film transistor DTr (not shown) is shown in FIG. 3 (sectional view of the driving thin film transistor in the organic light emitting device according to the modification of the first embodiment of the present invention). ) And 4 (cross-sectional view of a driving thin film transistor in an organic light emitting device according to still another modification of the first embodiment of the present invention), the semiconductor layer of amorphous silicon (220 in Fig. 3) or oxide The bottom gate type may have a semiconductor layer 320 made of a semiconductor material.

When the driving and switching thin film transistor is configured as a bottom gate type, as shown in FIG. 3, the driving and switching thin film transistors are spaced apart from the gate electrode 215, the gate insulating layer 218, and the active layer 220a of pure amorphous silicon. The semiconductor layer 220 formed of the ohmic contact layer 220b of impurity amorphous silicon and the source and drain electrodes 233 and 236 spaced apart from each other, or have a stacked structure as shown in FIG. 315, the gate insulating layer 318, the oxide semiconductor layer 320, the etch stopper 322, and the source and drain spaced apart from each other on the etch stopper 322 and in contact with the oxide semiconductor layer 320, respectively. The electrodes 333 and 336 have a stacked structure.

In the case of the first substrate (210 in FIG. 3 and 310 in FIG. 4) in which the bottom gate type driving and switching thin film transistor DTr (not shown) is formed, the gate wiring (not shown) is connected to the gate electrode (see FIG. 3). 215 and 315 of FIG. 4 are formed to be connected to a gate electrode (not shown) of the switching thin film transistor (not shown), and the data line (not shown) of the switching thin film transistor (not shown). It is configured to be connected to the source electrode (not shown) on the same layer on which a source electrode (not shown) is formed.

Meanwhile, referring to FIG. 2, although not shown in the drawing, a power supply wiring (not shown) is formed on the same layer on which the gate wiring (not shown) is formed or on the same layer on which the data wiring 130 is formed. A wiring (not shown) is connected to one electrode of the driving thin film transistor DTr.

In addition, a passivation layer 140 is formed on the entire surface of the first substrate 110 above the driving and switching thin film transistor DTr (not shown). In this case, a drain contact hole 143 exposing the drain electrode 136 of the driving TFT DTr is formed in the passivation layer 140.

The drain electrode 136 of the driving thin film transistor DTr and the drain contact hole 143 are in contact with each other over the passivation layer 140 having the drain contact hole 143. The first electrode 147 is formed.

The first electrode 147 has a double layer structure, and the upper layer 147b serves as an anode electrode, and the lower layer 147a is formed to serve as a reflector.

That is, the upper layer 147b of the first electrode 147 is a transparent conductive material having a relatively large work function value such as indium tin oxide (ITO) or indium zinc oxide (IZO) to serve as an anode electrode. The lower layer 147a of the first electrode 147 is formed of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), to be formed on the first electrode 147. By reflecting the light emitted from the organic light emitting layer 155 to the upper portion and recycling it, it serves to improve the luminous efficiency.

The organic light emitting diode 101 according to the first exemplary embodiment of the present invention has a top light emitting method, and the light emitted from the organic light emitting layer 155 toward the first substrate 110 is substantially a user. The first electrode 147 has a double layer structure including a lower layer 147a made of a metallic material having high reflectivity so that the light can be felt and disappeared, so that the light can be recycled to improve luminance characteristics and further simplify the manufacturing process. It is formed.

Next, the first electrode 147 is formed on the boundary of each pixel region P on the first electrode 147 having the double layer structure so as to overlap the edge of the first electrode 147 in the form of enclosing each pixel region P. A bank 150 having a height of about 1 to 10 μm is formed while exposing the central portion of the 150.

In this case, the bank 150 may be made of a general transparent organic insulating material, for example, polyimide, photo acryl, benzocyclobutene (BCB), or a material representing black. For example, it may be made of black resin.

In addition, in the pixel area P surrounded by the bank 150, the organic light emitting layer 155 is formed on the first electrode 147 to emit one of red, green, and blue colors. It is becoming.

In this case, the organic light emitting layer 155 may further include a material emitting white light in addition to the above-described light emitting materials emitting red, green, and blue, and may also be configured to emit red, green, blue, and white light.

In the drawing, for example, the organic light emitting layer 155 emitting red, green, and blue light is illustrated.

A second electrode 158 is formed on the organic light emitting layer 155 to serve as a cathode on the entire display area and to maintain transparency. In this case, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode (E).

Although not shown in the drawings, the light emitting efficiency of the organic light emitting layer 155 may be improved between the first electrode 147 and the organic light emitting layer 155 and between the organic light emitting layer 155 and the second electrode 158, respectively. The first emission compensation layer (not shown) and the second emission compensation layer (not shown) having a multilayer structure may be further formed.

In this case, the multilayer first emission compensation layer (not shown) may be sequentially stacked from the first electrode 147, and may include a hole injection layer and a hole transporting layer. A light emitting compensation layer (not shown) may be formed of an electron transporting layer and an electron injection layer from the organic light emitting layer 155.

On the other hand, the second electrode 158 formed on the organic light emitting layer 155 is a metal material having a relatively low work function value, such as aluminum (Al), aluminum alloy (AlNd), silver (Ag) to act as a cathode electrode ), Magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg), or any one or two or more materials.

In this case, the second electrode 158 has a thickness of 10 Å to a light transmittance that is smoothly transmitted by the organic light emitting device 101 according to the first exemplary embodiment of the present invention, which is driven in an upper light emitting method. It is characterized by being about 200Å.

On the other hand, when the second electrode 158 serving as a cathode electrode is formed to have a thickness of about 10 to 200 Å to maintain light transmittance due to the characteristics of the organic light emitting device 101 of the top light emitting method, serves as a general electrode Since the sheet resistance is not sufficient to increase the thickness, the voltage drop amount is different for each position, and finally, the luminance non-uniformity for each position is caused by changing the luminance characteristics of the light emitted from the organic light emitting layer 155.

That is, the second electrode 158 is formed on the front of the display area, and the signal voltage to the second electrode 158 is made through the wiring provided in the non-display area outside the display area. The difference in the voltage drop occurs due to the distance difference with respect to the portion, and in particular, the luminance drop occurs because the voltage drop in the magnetic field and the center portion of the display area has a large difference.

Accordingly, as one of the most characteristic features of the organic light emitting device 101 according to the first embodiment of the present invention to suppress the luminance non-uniformity phenomenon, a metal material having a low resistance characteristic over the second electrode 158 is used. For example, the auxiliary wiring is made of any one or two or more of aluminum (Al), aluminum alloy (AlNd), silver (Ag), gold (Au), copper (Cu) and has a sufficient thickness so that the voltage drop is small due to internal resistance. 168 is formed in a lattice form over the entire display area.

In addition, the auxiliary line 168 is formed in a lattice shape and overlaps the bank 150 formed corresponding to the boundary of each pixel area P.

In this case, the auxiliary line 168 has a width equal to or greater than the width of the gate line (and / or) and / or the data line 130 under the bank 150, and the thickness thereof is equal to or greater than the width of the auxiliary line 168. It is at the same level as that of the gate wiring (not shown) or the data wiring 130, that is, 1000 kV to 4000 kV.

As such, when the auxiliary line 168 has a width and thickness level similar to those of the gate line (not shown) or the data line 130 defining each pixel area P, the voltage drop amount of each position in front of the display area by itself is increased. When the signal voltage is applied through the auxiliary wiring 168, the voltage drop for each position is hardly generated even in the second electrode 158 contacting with the auxiliary wiring 168. The phenomenon can be suppressed.

The auxiliary wiring 168 having such a structure is not formed by patterning through a mask process, but is selectively printed corresponding to the formed bank 150 with a large step compared to other regions through a roll printing apparatus. The formation of the auxiliary line 168 will be described in detail later through a manufacturing method.

Meanwhile, the first electrode, the organic emission layer 155, and the second electrode 158 sequentially formed on the first substrate 110 form an organic light emitting diode (E).

On the other hand, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic light emitting device 101 according to the first embodiment of the present invention having the above-described configuration.

The first substrate 110 and the second substrate 170 are provided with an adhesive (not shown) made of sealant or frit along the edge thereof, and the first substrate (not shown) is provided with the adhesive (not shown). 110 and the second substrate 170 are bonded to each other to maintain the panel state.

In this case, the first substrate 110 and the second substrate 170 spaced apart from each other may have a vacuum state or may be filled with an inert gas to have an inert gas atmosphere.

On the other hand, the second substrate 170 for the encapsulation may be made of a plastic having a flexible characteristic, or may be made of a glass substrate.

On the other hand, the organic light emitting device 101 according to the first embodiment described above is shown as an example that is provided with a second substrate 170 for encapsulation in a form facing away from the first substrate 110. As a modification, the second substrate 170 may be configured to contact the second electrode 158 provided on the uppermost layer of the first substrate 110 in the form of a film including an adhesive layer.

In addition, as another modification according to the first embodiment of the present invention, an organic insulating film (not shown) or an inorganic insulating film (not shown) may be further provided on the second electrode 158 to form a capping film. The organic insulating film (not shown) or the inorganic insulating film 162 may be used as an encapsulation film (not shown) by itself, and in this case, the second substrate 170 may be omitted.

Meanwhile, referring to FIG. 5, which is a plan view schematically showing the planar configuration of the organic light emitting device 101 according to the first embodiment of the present invention having the above configuration, the non-display area NA outside the display area AA. ) Has a configuration in which the Vss wiring Vss and the auxiliary wiring 168 provided in the first and second non-display areas NA1 and NA2 facing each other with the display area AA therebetween are connected to each other. The signal voltage applied from the printed circuit board 190 including the driving circuit unit is connected to the second electrode 158 formed on the entire surface of the display area via the auxiliary wiring 168 connected thereto through the Vss wiring Vss. Is applied.

In this case, the signal voltage applied to the Vss wiring Vss is not transmitted to the second electrode 158 formed on the front surface of the display area AA by using the second electrode 158 itself, and the internal resistance value per unit area is increased. Since the voltage is transmitted to the second electrode 158 through the auxiliary wiring 168 where almost no voltage drop occurs, even though the second electrode 158 has a large area, the amount of voltage drop for each position is different. It can be seen that the luminance non-uniformity of each position of the organic light emitting device 101 due to the change can be suppressed.

That is, in the case of the organic light emitting device 101 according to the first embodiment of the present invention, the signal voltage is transmitted through the auxiliary line 168, so that the signal voltage is transferred through the auxiliary line 168. The voltage is hardly changed in size by low internal resistance.

Accordingly, a signal contact voltage having a substantially similar magnitude may be applied to the edge portion of the display area AA or the portion of the second electrode 158 positioned at the center portion of the display area AA through the auxiliary line 168. .

In addition, since the signal voltage travels through the second electrode 158, the actual distance is the width of the pixel region P, which is a spaced interval between the auxiliary wirings 168 adjacent to each other, without a difference in position of the second electrode 158. Since the voltage drop due to the large sheet resistance of the second electrode 158 itself is hardly generated, the luminance unevenness by position of the second electrode 158 can be fundamentally suppressed.

Meanwhile, referring to FIG. 6 (a plan view schematically showing a structure of a conventional organic light emitting device 101 without an auxiliary electrode as a comparative example) as a comparative example, 10 Å to 10 를 to maintain transparency without the auxiliary wiring (168 of FIG. 5). In the case of the organic light emitting device 1 having the second electrode 58 having a thickness of about 200 mA, the signal voltage applied from the printed circuit board 90 including the driving circuit part is connected through the Vss wiring Vss. It is applied to the second electrode 58 connected in direct contact therewith.

In this case, the second electrode 58 is formed of a metal material having a relatively low work function value to maintain transparency, and thus has a thickness of about 10 kPa to about 200 kPa.

Therefore, the second electrode 58 portion (the edge portion of the second electrode 58) adjacent to the Vss wiring Vss and the second electrode 58 portion (the second electrode) located farthest from the Vss wiring Vss. Between the centers of 58, the voltage drop is generated in proportion to the moving distance of the signal voltage due to the large sheet resistance characteristic of the second electrode 58 itself.

That is, since the distance at which the signal voltage moves by using the second electrode 58 has a difference of about 1/2 of the maximum display area width for each position, the voltage drop amount for each position of the second electrode 58 is significantly different. Will have

Therefore, the organic light emitting device 1 according to the comparative example having such a configuration is particularly located at a relatively long distance from the edge of the display area AA adjacent to the Vss wiring Vss due to the difference in the voltage drop amount for each position. It can be seen that the luminance unevenness is severely generated between the central portions of the region AA.

Hereinafter, a method of manufacturing the organic light emitting diode 101 according to the first embodiment of the present invention having the above-described configuration will be described.

 7A to 7H are process steps of manufacturing an organic light emitting diode according to a first embodiment of the present invention. In this case, in the organic light emitting diode 101 according to the first embodiment of the present invention and its modifications, the manufacturing method up to the step of forming the first electrode of the organic light emitting diode including a driving and switching thin film transistor is Since the method of forming these components is the same as the manufacturing method of a general organic light emitting device, a detailed description thereof will be omitted, and then the steps after forming the organic light emitting diode will be described in detail, including forming a bank. .

First, as shown in FIG. 7A, a gate wiring (not shown) defining a pixel region P by crossing each other on a transparent insulating substrate 101, for example, a glass or a plastic substrate having flexible characteristics, and The data line 130 and the power line (not shown) are formed, and switching and driving thin film transistors (DTr) are formed in each pixel area P. FIG.

In this case, when the driving and switching thin film transistor DTr (not shown) has a top gate structure as in the first embodiment of the present invention, impurities are doped in the first region 113a of pure polysilicon and both sides thereof. The polysilicon semiconductor layer 113 comprising the second region 113b of the polysilicon, the gate insulating layer 116, the gate electrode 120 formed to overlap the first region 113a, and the second region. An interlayer insulating film 123 having a semiconductor layer contact hole 125 exposing the 113b and a source and a drain in contact with the source and drain regions 113b and spaced apart from each other through the semiconductor layer contact hole 125, respectively. It is formed to have a stacked structure of electrodes 133 and 136.

In addition, when the driving and switching thin film transistor DTr (not shown) has a bottom gate structure as in the modified example, as shown in FIG. 3, the gate electrode 215, the gate insulating film 218, and pure water It is formed to have a stacked structure of the semiconductor layer 220 made of an ohmic contact layer 220b of impurity amorphous silicon and spaced apart from the active layer 220a of amorphous silicon, and the source and drain electrodes 233 and 236 spaced apart from each other. 4 or the gate electrode 315, the gate insulating film 318, the oxide semiconductor layer 320, the etch stopper 322, and the etch stopper 322 are spaced apart from each other. It is formed to have a stacked structure of source and drain electrodes 333 and 336 in contact with the oxide semiconductor layer 320.

Next, referring again to FIG. 7A, a protective layer 140 having a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr over the switching and driving thin film transistor DTr. ).

Subsequently, the lower layer 147a and the work function value formed of a metal material having excellent reflection efficiency, for example, aluminum (Al) or silver (Ag), having a plate shape for each pixel area P on the protective layer 140. A first electrode 147 having a double layer structure of an upper layer 147b made of indium tin oxide (ITO), which is a relatively high transparent conductive material, is formed.

Next, as shown in FIG. 7B, a polyimide containing an organic material, such as fluorine (F), having a hydrophobic property in addition to an organic material, preferably a photosensitive property, is formed on the first electrode 147. Organic material layer having a thickness of several μm, more precisely 1 to 10 μm by coating a material in which one or two or more of styrene, methyl mathacrylate, and polytetrafluoroethylene are mixed (Not shown) is formed.

In this case, since the organic material layer (not shown) has photosensitive characteristics, the organic material layer (not shown) may be exposed and patterned so that the application and etching of a separate photoresist layer may be omitted for patterning.

Thereafter, the organic material layer (not shown) is patterned by performing exposure using an exposure mask and a mask process including development of the organic material layer to pattern the boundary of each pixel region P, that is, the gate wiring (not shown). And the bank 150 are formed so as to overlap the data line 130 and overlap the predetermined width of the portion of the first electrode 147 provided in the pixel area P.

The bank 150 has a height of about 1 μm to about 10 μm from the passivation layer 140, and has a lattice shape in front of the display area to expose the central portion of the first electrode 147 in each pixel area P. FIG. It is characteristic to form.

  Next, as shown in FIG. 7C, an inkjet apparatus 195 or a nozzle coating apparatus (not shown) is used in correspondence with the first substrate 110 on which the bank 150 having a lattice form in the display area is formed. By spraying or dropping a liquid organic light emitting material corresponding to an area surrounded by the bank 150 to form an organic light emitting material layer (not shown) on the first electrode 150 in each pixel area P. do.

In this case, the bank 150 is made of an organic material having hydrophobic characteristics, so that the liquid organic light emitting material is sprayed or dropped in each pixel region P in the step of spraying or dropping a liquid organic light emitting material. If the injection or dropping position is biased due to the error of the inkjet apparatus 195 or the nozzle coating apparatus (not shown), the bank 150 has a hydrophobic characteristic. The organic light emitting material dropped on the banks 150 flows from the banks 150 into the pixel regions P surrounded by the banks 150, thereby preventing defects due to spraying and dropping.

In addition, even if the injection amount of the liquid organic light emitting material injected into each pixel area P is a little, the hydrophobic property has a tendency to push the organic light emitting material, so that the overflow can be prevented from flowing in each pixel area P. You have an advantage.

In this state, the organic light emitting layer 155 may be formed in the pixel region P by removing the solvent by drying and curing the organic light emitting material layer (not shown).

Meanwhile, in the drawing, only the organic emission layer 155 having a single layer structure is formed on the first electrode 150 as an example. However, the organic emission layer 155 may be formed of multiple layers.

That is, in this case, the organic light emitting layer 155 having the multilayer structure proceeds to the same method of forming the organic light emitting layer 155 of the single layer to inject holes into the auxiliary layer below or on the organic light emitting layer 155. Any one of a hole injection layer (not shown), a hole transporting layer (not shown), an electron transporting layer (not shown), and an electron injection layer (not shown) It can be configured by selectively forming the above.

Next, as shown in FIG. 7D, a metal material having a relatively low work function value, for example, aluminum (Al), aluminum alloy (AlNd), silver (Ag), magnesium (Mg), and gold, is formed on the organic light emitting layer 155. One or two or more of (Au) and aluminum magnesium alloy (AlMg) are mixed to thermally deposit in a vacuum atmosphere, thereby forming a second electrode 158 having a thickness of about 10 to about 200 kHz over the entire display area.

In the case of the second electrode 158 formed by the thermal evaporation, the organic light emitting layer 155 is formed to be seamlessly connected to the entire surface of the display area up to the upper surface and the side surface of the bank 150.

In this case, the first electrode 150, the organic emission layer 155, and the second electrode 158 sequentially stacked in each pixel area P form an organic light emitting diode E.

Next, as illustrated in FIGS. 7E and 8 (a schematic view of a roll coating apparatus used to manufacture an organic EL device according to a first embodiment of the present invention), a stage 410 on which a substrate is seated And a printing roll 420 covered with the blanket 415, and an ink supply slit 430 for supplying and coating a liquid conductive ink to the blanket 415 on the printing roll 420. The first substrate 110 having the second electrode 158 formed on the entire surface of the display area is seated on the stage 410 of the 401.

Thereafter, a low-resistance conductive material such as aluminum (Al), aluminum alloy (AlNd), silver (Ag), into the blanket 415 formed at the outermost portion of the printing roll 420 through the ink supply slit 425. The printing roll 420 while dropping an appropriate amount of low-resistance conductive ink in which a liquid is mixed by mixing fine particles having a size of several to several tens of nanometers made of one or more materials of gold (Au) and copper (Cu) and a solvent. ) By rotating in one direction to form a conductive ink layer 430 by coating a low-resistance conductive ink with a predetermined thickness on the entire surface of the blanket (415).

In this case, the conductive ink has a surface energy that is greater than the surface energy of the blanket 415 provided in the printing roll 420 and smaller than the surface energy of the second electrode 158 provided in the first substrate 110. It is preferred to have

The blanket 415 is made of, for example, polydimethylsiloxane (PDMS). In this case, the surface energy of the blanket 415 has a value smaller than 20 mJ / m 2 due to a material characteristic of the PDMS, and the first substrate 110. Since the second electrode 158 formed in the metal material is made of a metal material, the surface energy of the metal material is usually greater than 50 mJ / m 2, so that the conductive ink has a surface energy of 20 mJ / m 2 to 50 mJ / m 2. It is preferable to have the range of.

When the surface energy of the low-resistance conductive ink is smaller than the surface energy of the blanket 415 or greater than the surface energy of the second electrode 158, the transfer characteristics of the conductive ink layer 430 are significantly reduced. There may be a problem that the transfer is not smooth from the blanket 415 to the surface of the second electrode 158 on the first substrate 110, the conductive ink is 20mJ to suppress such a problem inherently It is to have a surface energy of about / m 2 to 50 mJ / m 2.

Next, as shown in FIG. 7F, the printing roll 420 having the conductive ink layer 430 formed on the entire surface of the blanket 415 is in contact with one end of the first substrate 110 in one direction. The conductive ink layer 430 on the blanket 415 by moving the stage 410 on which the first substrate 110 is mounted and simultaneously rotating the printing roll 420 at a moving speed of the stage 410. Only the portion where the contact with the second electrode 158 formed to overlap the bank 150 provided on the first substrate 110 is transferred to the first substrate 110.

That is, the conductive ink layer 430 has a relatively large adhesive force with the second electrode 158 due to the difference in the surface energy between the blanket 415 and the second electrode 158, the surface of the blanket 415 It can be transferred away from the surface of the second electrode 158 of the first substrate 110.

The portion of the second electrode 158 formed on the first substrate 110 overlaps the bank 150 by the bank 150 formed at a lower portion thereof, so that the second electrode 158 protrudes from other regions, thereby forming a convex portion. The portion overlapping with 155 forms a concave portion.

Accordingly, due to this structural feature of the second electrode 158, the conductive ink layer 430 formed on the surface of the blanket 415 may be selectively formed from the second electrode 158 formed on the first substrate 110. The contact is made only with respect to the portion overlapping with the 150, and is transferred only to the portion to form the conductive ink pattern 165. Thus, the conductive ink pattern 165 transferred to the upper portion of the second electrode 158 on the first substrate 110 is formed. ) Overlaps only the portion where the bank 150 is formed and is formed in the same planar shape to form a grid in the display area.

As such, the conductive ink pattern 165 having the same width as that of the bank 150 by being transferred onto the first substrate 110 has the same width as that of the bank 150 and overlaps the gate wiring (not shown) and / or data wiring 130. It is characterized by having a width larger than the width of).

Next, as shown in FIG. 7G, the first substrate 110 on which the conductive ink pattern 165 of FIG. 7F is formed is heat-treated using a hardening means such as a furnace or an oven to form the conductive ink pattern (FIG. By removing the solvent in 165 of 7f, the first substrate 110 according to the first embodiment of the present invention is completed by forming the auxiliary wiring 168 having a lattice shape having only low resistance metal material by using only a low resistance metal material.

At this time, the auxiliary wiring 168 has a thickness of about 1000 to 4000 kPa, which is similar to that of the gate wiring (not shown) or the data wiring 130, so that the internal resistance per unit area is small, so that low resistance wiring characteristics are expressed. When the signal voltage is applied, it is preferable that the voltage drop due to the internal resistance hardly occurs.

Subsidiary wiring 168 having such a thickness also has a voltage drop when the signal voltage is applied by the internal resistance, but the voltage drop is several times higher than that of the second electrode 158 having a thickness of about 20 to 200 kV. It is mentioned that the voltage drop is rarely generated through the auxiliary line 168 because the voltage of the signal voltage applied through the auxiliary line 168 becomes negligibly small, which is a few orders of magnitude lower.

On the other hand, in the case of forming the auxiliary wiring 168 in the form overlapping with the bank 150 through the above-described roll coating apparatus, a mask process for separate patterning, that is, the application of photoresist, exposure using an exposure mask, exposed Since the development of the photoresist, the etching and the process of the strip of the photoresist do not need to proceed, there is an advantage of implementing the effect of the process simplification.

Next, as shown in FIG. 7H, a second substrate 170 made of a transparent insulating material is disposed to face the first substrate 110 so as to encapsulate the organic light emitting diode E. Between the first substrate 110 and the second substrate 170, a face seal (not shown) made of any one of a frit, an organic insulating material, and a polymer material, which is transparent and has an adhesive property, may be formed. The first substrate 110 and the second substrate 170 are bonded to each other in a state of being coated on the entire surface of the 110, or a seal pattern (not shown) along the edge of the first substrate 110 in a vacuum or inert gas atmosphere. ) And then bonding the first and second substrates 110 and 170 to complete the organic light emitting device 101 according to the first embodiment of the present invention.

On the other hand, by depositing or coating an inorganic insulating material or an organic insulating material on the second electrode 158 of the first substrate 110, or by re-attaching the adhesive layer (not shown) to attach a film (not shown) When used as a encapsulation film (not shown), the second substrate 170 may be omitted.

9 is a cross-sectional view of a part of a display area of an organic light emitting diode according to a second exemplary embodiment of the present invention. In this case, for convenience of description, a region in which the switching thin film transistor is to be formed in each pixel region is defined as a switching region and a region in which the driving thin film transistor is to be formed as a driving region, and the driving thin film transistor is formed for each pixel region. Only one pixel area is shown. In the case of the organic light emitting device according to the second embodiment of the present invention, only the formation position of the auxiliary wiring is different, and other components are the same as those of the organic light emitting device according to the first embodiment. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and only 400 organic light emitting diodes are added to the same reference numerals.

In the organic light emitting diode 501 according to the second embodiment of the present invention, a driving and switching thin film transistor DTr (not shown), an organic light emitting diode E, and a display area AA of the organic light emitting diode E The first substrate 110 having the auxiliary wiring 168 formed of a metal material having a low resistance characteristic and having a lattice shape along the boundary between the second electrode 158 and the bank of the pixel region P, and the A second substrate 170 for encapsulation and protection of the organic light emitting diode E is formed. In this case, the second substrate 170 may be replaced with an inorganic insulating film and / or an organic insulating film, or may be omitted by attaching a film.

First, the configuration of the first substrate 110 including the driving and switching thin film transistor DTr (not shown), the organic light emitting diode E, and the auxiliary line 168 will be described.

On the first substrate 110, the gate and data lines (not shown) 130 which cross each other and define the pixel region P and extend in parallel with any one of these two lines (not shown) 130. Power wiring (not shown) is being formed.

Each pixel region P is provided with a driving and switching thin film transistor DTr (not shown). In this case, the structure of the driving and switching thin film transistor DTr (not shown) has been described through the first embodiment and modifications thereof, and thus will be omitted.

In addition, a drain contact hole 143 exposing the drain electrode 136 of the driving thin film transistor DTr is disposed on the driving and switching thin film transistor DTr (not shown) to correspond to the entire surface of the first substrate 110. The provided protective layer 140 is formed.

The drain electrode 136 of the driving thin film transistor DTr and the drain contact hole 143 are in contact with each other over the passivation layer 140 including the drain contact hole 143. In other words, the upper layer 147b serves as an anode electrode, and the lower layer 147a has a first electrode 147 having a double layer structure serving as a reflecting plate.

Next, the first electrode 147 is formed on the boundary of each pixel region P on the first electrode 147 having the double layer structure so as to overlap the edge of the first electrode 147 in the form of enclosing each pixel region P. The bank 150 is formed while exposing the central portion of the 150.

On the other hand, in the organic light emitting device 501 according to the second embodiment of the present invention as the most characteristic configuration, the upper portion of the bank 150 is in direct contact with the aluminum (Al), aluminum alloy (AlNd) as a low resistance conductive material ), An auxiliary wiring 168 made of any one or two or more of silver (Ag), gold (Au), and copper (Cu) is formed. The auxiliary line 168 is selectively formed only in correspondence with the bank 150 to form a grid in the display area.

In the case of the organic light emitting device (101 of FIG. 1) according to the first embodiment, the auxiliary wiring (168 of FIG. 2) is formed on the second electrode (158 of FIG. 2), but the organic field according to the second embodiment. In the case of the light emitting device 501, since the first electrode 158 is first formed corresponding to the bank 150 before the second electrode 158 is formed, the light emitting device 501 is positioned below the second electrode 158.

In this case, the auxiliary line 168 has a width equal to or greater than the width of the gate line (and / or) and / or the data line 130 under the bank 150, and the thickness thereof is equal to or greater than the width of the auxiliary line 168. It is at the same level as that of the gate wiring (not shown) or the data wiring 130, that is, 1000 kV to 4000 kV.

The organic emission layer 155 is formed on the first electrode 147 in each pixel region P surrounded by the bank 150.

In addition, the second electrode 158 is formed on the organic light emitting layer 155 and the auxiliary line 168 to serve as a cathode on the entire display area and to maintain transparency. In this case, the first and second electrodes 147 and 158 and the organic light emitting layer 155 formed therebetween form an organic light emitting diode (E).

In addition, a second substrate 170 for encapsulation is provided corresponding to the first substrate 110 of the organic light emitting diode 501 according to the second exemplary embodiment having the above-described configuration.

In this case, the second substrate 170 may be further provided with an organic insulating film (not shown) or an inorganic insulating film (not shown) on the second electrode to form a capping film, the organic insulating film (not shown) or inorganic insulating film 162 ) May itself be used as an encapsulation film (not shown), in which case the second substrate 170 may be omitted.

On the other hand, the organic light emitting device 501 according to the second embodiment of the present invention having such a configuration also improves display quality by improving luminance unevenness in the same manner as the organic light emitting device (101 in FIG. 2) according to the first embodiment. It is obvious that the effect of improving can be realized.

Hereinafter, a method of manufacturing the organic light emitting diode 501 according to the second embodiment of the present invention having the above-described configuration will be briefly described. In this case, since the method of manufacturing the organic light emitting device 501 according to the second embodiment is mostly similar to the first embodiment, a description will be given focusing on the parts that are different from the second embodiment.

10A through 10E are cross-sectional views illustrating manufacturing steps of an organic light emitting diode according to a second exemplary embodiment of the present invention.

As shown, the gate and data wirings (not shown) 130 which define the pixel region P crossing each other on the first substrate 101 by going through the same method shown in the first embodiment, and these two wirings Power lines (not shown) extend parallel to any one of the wires (not shown) 130, and driving and switching thin film transistors DTr (not shown) are formed inside each pixel area P.

Subsequently, a passivation layer 140 is formed on the driving and switching thin film transistor DTr (not shown), and a drain electrode 136 of the driving thin film transistor DTr is formed in each pixel region P on the passivation layer 140. ) And a first electrode 147 having a double layer structure.

Subsequently, a bank 150 having a height of about 1 to 10 μm is overlapped with the edge portion of the first electrode 147 successively over the first electrode 147 and at the boundary of each pixel region P. Form.

The steps up to forming the bank 150 proceed in the same manner as in the first embodiment.

Next, as shown in FIG. 10B, the first substrate 110 having the bank 150 formed thereon is seated on the stage 410 of the roll coating apparatus 401 of FIG. 8, and roll coating is performed. The conductive ink pattern 165 may be selectively formed only corresponding to the banks 150 forming the convex portions protruding from other regions.

In this case, the bank 150 is made of an organic material having a value greater than the surface energy of the conductive ink forming the conductive ink pattern 165, thereby forming a conductive ink layer formed on the surface of the blanket 415 of the printing roll 420 ( It is preferable to allow the 430 to be smoothly transferred onto the bank 150 on the first substrate 110.

 Thereafter, as illustrated in FIG. 10C, heat treatment is performed on the conductive ink pattern (not shown) formed on the bank 150 of the first substrate 110 to form an auxiliary wiring 168. The auxiliary line 168 is characterized by forming a grid in the display area.

The method of forming the auxiliary wiring 168 through the roll coating apparatus 401 of FIG. 8 is different from that formed on the bank 150 instead of being formed on the second electrode 158 of FIG. 2. However, the method of forming the auxiliary wiring 168 itself is substantially the same as that of the first embodiment, and the method of forming the auxiliary wiring 168 of FIG. 2 is performed through the roll coating apparatus 401 of FIG. 8. Since it has already been described in detail by way of example, a description thereof will be omitted below.

Next, as shown in FIG. 10D, the bank 150 directly contacts the bank 150 and corresponds to the first substrate 110 having the auxiliary wiring 168 formed in a lattice form in a display area. By spraying or dropping a liquid organic light emitting material corresponding to an area surrounded by the bank 150 by using an inkjet device 195 or a nozzle coating device (not shown). An organic light emitting material layer (not shown) is formed on the electrode 150, and the organic light emitting layer 155 in the cured state is formed in each pixel area P by removing and drying the solvent.

Next, as shown in FIG. 10E, a metal material having a relatively low work function value for the first substrate 110 on which the auxiliary wiring 168 and the organic light emitting layer 155 are formed, for example, aluminum (Al) and aluminum The auxiliary wiring 168 by admixing any one or two or more of an alloy (AlNd), silver (Ag), magnesium (Mg), gold (Au), aluminum magnesium alloy (AlMg) in a vacuum atmosphere. And a second electrode 158 having a thickness of about 10 to about 200 micrometers on the entire display area above the organic emission layer 155.

Thereafter, as shown in FIG. 10F, a second substrate 170 is formed to correspond to the first substrate 110 formed on the second electrode 158 by performing the same method mentioned in the first embodiment. Alternatively, by forming an encapsulation film, the organic light emitting diode 501 according to the second embodiment of the present invention is completed.

In the case of the organic light emitting device manufactured by the manufacturing method according to the second embodiment of the present invention, similarly to the first embodiment, an auxiliary material made of a low resistance conductive material in the form of overlapping with the bank and in contact with the second electrode at the same time Since the wiring is provided, the signal voltage applied to the second electrode moves inside the second electrode along the auxiliary wiring, thereby suppressing a voltage unevenness by position in the second electrode.

Furthermore, in the method of manufacturing the organic light emitting device according to the second embodiment, since the auxiliary wiring is formed through the roll coating apparatus after forming the bank and before forming the organic light emitting layer, the auxiliary light is formed after forming the organic light emitting layer and the second electrode. It further has an effect of suppressing damage to the second electrode and the organic light emitting layer due to the error compared to the first embodiment for forming the wiring.

That is, due to the characteristics of the roll coating apparatus, contact between the first substrate and the roll is made. In this case, the physical force is applied to the first substrate. In the first embodiment, the second electrode and the organic light emitting layer are applied by the physical force applied by the roll coating apparatus. In the manufacturing method according to the second embodiment, the auxiliary wiring is preferentially formed on the bank in a state where only the bank is formed without the organic light emitting layer and the second electrode formed on the first electrode. As a result, even if a physical force is applied during roll coating, the organic light emitting layer and the second electrode are not damaged at all.

Therefore, the method of manufacturing the organic light emitting device according to the second embodiment will be more advantageous in terms of preventing damage to the organic light emitting layer and the second electrode compared to the method of manufacturing the organic light emitting device according to the first embodiment.

The present invention is not limited to the above-described embodiments and modifications, and various modifications can be made without departing from the spirit of the present invention.

101 organic light emitting device 110 first substrate
113: semiconductor layer 113a: first region
113b: second region 116: gate insulating film
120: gate electrode (of driving thin film transistor)
123: interlayer insulating film 125: semiconductor layer contact hole
133: source electrode (of the driving thin film transistor)
136: drain electrode (of driving thin film transistor)
140: protective layer 143: drain contact hole
147: First electrode 147a: Lower layer (of the first electrode)
147b: upper layer (of the first electrode) 150: bank
155: organic light emitting layer 158: second electrode
168: auxiliary wiring 170: second substrate
180: protective film DTr: driving thin film transistor
E: organic light emitting diode P: pixel area

Claims (15)

delete delete delete delete delete delete delete delete Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined;
Forming a bank in the display area, the bank overlapping an edge of the first electrode and having a first height and surrounding the pixel area;
Forming an organic emission layer on each of the first electrodes surrounded by the banks;
Forming a second electrode having a first thickness on the organic light emitting layer, the second electrode being formed on the entire surface of the display area without any break, and having a portion protruding from the bank;
Selectively forming an auxiliary line corresponding to a portion having a second thickness over the second electrode and protruding from the bank;
Including;
Selectively forming an auxiliary line corresponding to a portion having a second thickness over the second electrode and protruding from the bank,
Mounting a substrate on which the second electrode is formed on the stage of a roll coating apparatus comprising a stage and a printing roll having a blanket on the surface and an ink supply slit for supplying conductive ink to the printing roll;
Coating a conductive ink in a liquid state on the entire surface of the blanket to form a conductive ink layer;
The stage is advanced in one direction, and the blanket in which the conductive ink layer in the liquid state is formed on the entire surface thereof is rotated in one direction according to the traveling speed of the stage to protrude the conductive ink layer and the second electrode. Transferring the conductive ink layer to all the protruding portions of the second substrate by direct contact with the substrate;
Forming the auxiliary wiring by heat treating and curing the conductive ink pattern transferred onto the second electrode,
The planar area of the auxiliary line is formed to be the same as the planar area of the bank.
delete Forming a first electrode for each pixel region on a first substrate on which a display region having a plurality of pixel regions is defined;
Forming a bank in the display area, the bank overlapping an edge of the first electrode and having a first height and surrounding the pixel area;
Forming an organic emission layer on each of the first electrodes surrounded by the banks;
Forming a second electrode on the organic light emitting layer and having a first thickness on the entire display area.
Further comprising forming auxiliary wirings having a second thickness thereon selectively only for the banks before forming the organic light emitting layer,
Selectively forming an auxiliary wiring having a second thickness thereon only for the bank,
Mounting a substrate on which the bank is formed on the stage of a roll coating apparatus comprising a stage and a printing roll having a blanket on the surface and an ink supply slit for supplying conductive ink to the printing roll;
Coating a conductive ink in a liquid state on the entire surface of the blanket to form a conductive ink layer;
While advancing the stage in one direction, the blanket having the liquid conductive ink layer formed thereon in the front surface is rotated in one direction according to the traveling speed of the stage so that the conductive ink layer and the upper surface of the bank directly contact each other. Transferring the conductive ink layer to all of the bank top surfaces of the second substrate;
Forming the auxiliary wiring by heat treating and curing the conductive ink pattern transferred to the upper surface of the bank,
The second electrode is a method of manufacturing an organic light emitting device, characterized in that the upper surface of the auxiliary wiring and the side surface of the auxiliary wiring is in contact with each other.
The method according to claim 9 or 11,
And the auxiliary line extends to a non-display area outside the display area and is connected to a Vss wire for applying a signal voltage.
The method according to claim 9 or 11,
The conductive ink may be formed of any one of conductive materials such as aluminum (Al), aluminum alloy (AlNd), copper (Cu), gold (Au), and silver (Ag). Method for producing an organic light emitting device consisting of particles and solvents.
The method according to claim 9 or 11,
The first height is 1 to 10㎛, the first thickness is 10 to 200Å, the second thickness is 1000 to 4000Å manufacturing method of an organic light emitting device.
The method according to claim 9 or 11,
Prior to forming the first electrode,
A gate and data wiring crossing the first substrate to define the pixel region, a power wiring formed in the same layer on which the gate wiring or data wiring is formed, and provided in each pixel region, and the gate wiring and data A switching thin film transistor connected to a wiring, a driving thin film transistor connected to the power supply wiring and the switching thin film transistor, a drain contact hole covering the switching and driving thin film transistor over the display area and exposing the drain electrode of the driving thin film transistor. Further proceeding to form a protective layer having,
And the first electrode is formed to contact the drain electrode of the driving thin film transistor through the drain contact hole in each pixel area over the passivation layer.

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