KR102180979B1 - Processing apparatus and method - Google Patents

Abstract

Provided are a treatment device and a treatment method applied thereto. The treatment device comprises: a support part which is provided in the air and on which an object to be treated can be placed; a chamber part which is disposed on one side of the support part and has an open portion facing the object to be treated; a first discharging part, of which at least a portion is disposed in the chamber part; a second discharging part, of which at least a portion is disposed in the chamber part; an inspection part which is connected to the first and second discharging parts and inspects defects in the object to be treated; and a source supply part connected to the chamber part so as to be able to spray a source for depositing a thin film. The treatment device and the treatment method can inspect and repair the object to be treated provided in the air.

Description

Processing apparatus and method {PROCESSING APPARATUS AND METHOD}

The present invention relates to a processing apparatus and method, and more particularly, to a processing apparatus and method capable of inspecting and repairing an object to be treated provided in the atmosphere.

During manufacture of the display device, various defects may occur on the substrate. Accordingly, during manufacture of the display device, a process of inspecting a defect may be performed, and a process of repairing a found defect may be performed.

Scanning electron microscopes and focused ion beam devices are used for image generation, component analysis, and cutting of thin films formed on a substrate. The scanning electron microscope and the focused ion beam apparatus scan charged particles on a thin film on a substrate, and collect secondary particles and X-rays emitted from the substrate to construct an image of the thin film formed on the substrate and analyze components. In addition, the focused ion beam device can cut the thin film by scanning charged particles into the thin film on the substrate.

The chemical vapor deposition repair apparatus is used in a process of repairing defects formed on a substrate. The chemical vapor deposition repair apparatus supplies a metal source to a defect location of a substrate and irradiates a laser to deposit a thin film, thereby connecting disconnected portions of a conductive line.

Conventionally, the inspection process and the repair process were performed using different devices, and thus, there is a problem in that the productivity of the process is lowered.

The technology that serves as the background of the present invention is published in the following patent documents.

KR 10-2016-0134235 A KR 10-1680291 B1

The present invention provides a processing apparatus and method capable of inspecting and repairing an object to be treated provided in the atmosphere.

A processing apparatus according to an embodiment of the present invention is a processing apparatus for processing an object to be processed, comprising: a support part provided in the atmosphere and capable of seating the object to be processed; A chamber portion disposed on one side of the support portion and having a portion facing the object to be processed open; A first discharge part at least partially disposed in the chamber part; A second discharge part at least partially disposed in the chamber part; An inspection unit connected to the first and second discharge units and inspecting defects of the object to be processed; And a source supply unit connected to the chamber unit to spray a thin film deposition source.

The chamber part may be disposed above the support part, the first and second discharge parts may be disposed to penetrate the upper part of the chamber part, and an opening may be formed under the chamber part.

The first and second discharge units may be disposed toward the opening, the source supply unit may be provided so that at least a portion of the source supply unit passes through the chamber unit, and an injection hole may be formed to be inclined around the opening.

The first emission unit and the second emission unit may emit particle beams on the object to be processed.

The first emission unit may include a transmission window, and may emit an electron beam to one surface of the object through the transmission window and the opening of the chamber unit, and collect electrons and X-rays emitted from the surface of the object. In addition, the second emission unit may have an aperture, and may emit an ion beam to one surface of the object to be processed through the aperture and the opening of the chamber unit, and collect ions and X-rays emitted from the surface of the object to be processed. can do.

The inspection unit may inspect the presence or absence of a defect and a type of defect of the object by using the image and component information of the object generated by at least one of the first and second emission units.

And a control unit for controlling the operation of the second emission unit and the source supply unit to cut a thin film on the object to be processed or form a thin film on the object according to the type of defect of the object to be processed.

The chamber portion has a vacuum chamber therein, the transmission window and the aperture are accommodated in the vacuum chamber, and the opening of the chamber portion has a size of several tens to several hundred micrometers, and may enclose a path of an electron beam and an ion beam.

The source supply unit may include a source supply pipe installed to pass through a wall of the chamber unit, and wherein the injection port is opened toward one surface of the object to be processed; A source for thin film deposition is stored therein, and a source supply source connected to the source supply pipe; may be included.

A processing method according to an embodiment of the present invention is a method of processing an object to be processed in an atmosphere, comprising: providing a chamber portion having a vacuum formed therein; Preparing an object to be processed in the atmosphere facing the chamber unit; Acquiring the image and component information of the object to be processed by using the beam emitted through the chamber unit; Inspecting the presence or absence of defects and types of defects of the object to be processed; And cutting a thin film on the object to be processed or forming a thin film on the object according to the type of defect by using the beam emitted through the chamber unit.

The process of obtaining the image and component information of the object to be processed may include generating at least one of an electron beam and an ion beam in at least one of the first and second emission units connected to the chamber unit; Emitting at least one of an electron beam and an ion beam to one surface of the object to be processed through the opening of the chamber part; Collecting X-rays and at least one of electrons and ions emitted from the object to be processed through the opening of the chamber part; And generating an image and component information of the object to be processed using at least one of the electrons and ions and X-rays.

The process of inspecting the presence or absence of defects and the type of defects may include determining the presence or absence of defects and the type of defects of the object by comparing the image and component information of the object to be processed with pre-input reference information.

The process of cutting the thin film may include a process of cutting the defect area by emitting an ion beam to the defect area of the thin film.

The process of forming the thin film may include: spraying a thin film deposition gas to the defect generation region of the thin film through a source supply pipe connected to the chamber; It may include a process of depositing a thin film by emitting an ion beam to the defect generation region.

According to an embodiment of the present invention, an object to be processed may be provided in an atmosphere facing a chamber portion in which a vacuum is formed therein, and an image and component information of the object to be processed may be obtained using a beam emitted through the chamber portion. In addition, using the image and component information of the object to be processed, the presence or absence of defects and the type of defect of the object to be processed are inspected, and when defects of the object to be processed are found, the beam emitted through the chamber unit is used to The thin film on the top can be cut or a thin film can be formed on the object to be treated. That is, without moving the object to be processed, and without replacing the device, inspection and repair of the object to be processed can be performed at once in a series of processing steps. Therefore, it is possible to save the moving time of the object to be treated, and increase the productivity of the treatment process.

In addition, according to an embodiment of the present invention, since it is possible to inspect and repair an object to be processed, such as a substrate, in the atmosphere, a plurality of substrates of different sizes can be processed using a single processing device, and processed in a vacuum atmosphere. Substrates made of difficult materials, for example, substrates made of flexible materials, can be easily processed in the atmosphere.

1 is a schematic diagram of a processing apparatus according to an embodiment of the present invention.
2 is a view for explaining a processing method according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, and will be implemented in various different forms. Only the embodiments of the present invention are provided to complete the disclosure of the present invention and to completely inform the scope of the invention to those of ordinary skill in the relevant field. In order to describe the embodiments of the present invention, the drawings may be exaggerated, and the same reference numerals in the drawings refer to the same elements.

The treatment apparatus and method according to the embodiment of the present invention may be an atmospheric pressure treatment apparatus and method. Meanwhile, the particle beam to be described later may include a charged particle beam and a neutral particle beam. Here, the charged particle beam may include a cation beam, an anion beam, and an electron beam. The positive ion beam and the negative ion beam are collectively referred to as an ion beam. The neutral particle beam may include an atomic beam and a neutron beam. Meanwhile, the aforementioned “particle beam” may be simply referred to as “beam”.

1 is a schematic diagram of a processing apparatus according to an embodiment of the present invention.

A processing apparatus according to an embodiment of the present invention is a processing apparatus for processing an object to be processed in the atmosphere using a particle beam (also referred to as a “beam”), and is provided in the atmosphere, and a support unit capable of seating the object to be processed ( 100), a chamber part 200 disposed on one side of the support part 100 and opening a part facing the object to be processed, a first discharge part 300 disposed at least partly in the chamber part 200, at least a part A second emission unit 400 disposed in the chamber unit 200, an inspection unit (not shown) connected to the first and second emission units 300 and 400 and inspecting defects of the object to be processed, and a thin film deposition source It includes a source supply unit 500 connected to the chamber unit 200 so as to spray.

In addition, the processing apparatus may include a bias power supply unit 600 and a control unit (not shown).

The object to be processed may be a substrate S. In this case, the substrate S may include wafers and glass panels used for manufacturing various electronic devices in a process in which various display devices including LCD, OLED and LED, solar cells and semiconductor chips are manufactured. Meanwhile, the object to be processed may be various in addition to the substrate S.

The support part 100 may be formed in a predetermined size capable of supporting the substrate S, and may be formed in a plate type. The support part 100 may include a stage. A bias power supply 600 may be connected to the support 100, and a bias voltage may be applied. The configuration of the support portion 100 may be various. The support part 100 may be provided in the atmosphere, and may support the substrate S in an atmospheric pressure atmosphere.

The chamber part 200 may be disposed above the support part 100, and may be spaced apart from the substrate S mounted on the support part 100 by a height of tens to several hundreds of micrometers. For example, the height of the separation between the upper surface of the substrate S mounted on the support part 100 and the lower surface of the chamber part 200 may be 100 micrometers. Of course, the above-described separation height may vary.

The wall 210 of the chamber part 200 may include an upper wall, a lower wall, and a side wall. The upper wall and the lower wall may extend in a horizontal direction and may be spaced apart in a vertical direction. The sidewalls may extend in the vertical direction and may be arranged along the circumferences of the upper and lower walls. The structure of the wall 210 may be various.

A vacuum chamber may be formed inside the wall 210. To this end, the wall 210 may be connected to a vacuum pump (not shown). The vacuum chamber can be controlled with a low vacuum such as 10 ^-3 to 10 ^-4 torr.

The first and second discharge parts 300 and 400 may be disposed to penetrate the upper part of the chamber part 200. For example, the first and second emission parts 300 and 400 may be disposed to penetrate the upper wall and the sidewall of the chamber part 200. A transmission window of the first discharge part 300 and an aperture of the second discharge part 400 may be accommodated in the vacuum chamber. An opening 220 may be formed under the chamber part 200. For example, the opening 220 may be formed to penetrate one side of the lower wall of the chamber part 200 in the vertical direction. The opening 220 has a size of several tens to several hundreds of micrometers, and may surround the paths L1 and L2 of the electron beam and the ion beam. For example, the opening 220 may have a size of 10 to 100 micrometers.

The chamber part 200 may be able to move relative to the support part 100. For example, the chamber part 200 may be installed to be movable in a plurality of directions, and may include a plurality of shaft members (not shown) on which the wall 210 is supported. The plurality of directions may include a horizontal direction and a vertical direction.

The first emission part 300 may be disposed toward the opening 220. The first emission unit 300 includes a transmission window and may emit an electron beam to one surface of the substrate S through the transmission window and the opening 220. In addition, the first emission unit 300 may collect electrons and X-rays emitted from one surface of the substrate S through the transmission window and the opening 220.

The first emission part 300 is installed in the chamber part 200, the first column 310 facing the opening 220, the electron beam generator 320 disposed inside the first column 310, an opening A first cover 330 mounted on one side of the first column 310 facing the 220 may include an electron beam transmitting member 340 mounted on the first cover 330 so as to pass the electron beam. .

The first emission unit 300 may further include a current detector 350, an electron detector 360, an X-ray detector 370, and a signal processor (not shown). Of course, the configuration of the first emission unit 300 may be various.

The first column 310 may face one surface of the substrate S through the opening 220. The lower part of the first column 310 may be disposed inside the chamber part 200. In the first column 310, an electron beam generator 320 may be disposed therein, and a lower portion may be opened downward. The first cover 330 may be mounted under the first column 310. The inside of the first column 310 may be controlled with a high vacuum, such as 10 ^-6 to 10 ^-9 torr. The first column 310 may be connected to a vacuum pump (not shown).

The electron beam generator 320 includes an electron emitter 321 capable of emitting an electron beam with a predetermined acceleration voltage and a probe current, and a plurality of lenses 322 capable of focusing and accelerating the electron beam emitted from the electron emitter 321. Can include. Of course, the configuration of the electron beam generator 320 may be various.

The first cover 330 may include a main body 331 and a joint member 332. The main body 331 may be detachably coupled to the open lower portion of the first column 410 by the joint member 332, and may seal the inside of the first column 410 from the outside.

The main body 331 may include an upper layer, an intermediate layer, and a lower layer, and the lower layer may be an insulating layer. The upper and intermediate layers may be electrically conductive layers. A through hole may be formed in the main body 331 and an electron beam transmitting member 340 may be mounted to seal the through hole. In this case, the electron beam transmitting member 340 may be supported on the upper layer.

The electron beam transmitting member 340 may collect secondary electrons. A transmission window may be formed on one side of the electron beam transmitting member 340. The transmission window can pass electron beams, backscattered electrons and X-rays. Secondary electrons may be electrons having an energy of about tens to hundreds of eV, and backscattered electrons may be electrons having higher energy than secondary electrons.

The electron beam transmitting member 340 may include, for example, a conductive wafer and a membrane. A via hole may be formed in the center of the conductive wafer. The membrane may be attached to the lower surface of the conductive wafer. A transmission window may be formed by the via hole and the membrane. The transmission window may intersect the electron beam traveling path L1. The membrane may include, for example, a silicon nitride (SiN) film. Of course, the configuration of the electron beam transmitting member 340 may be various.

Current detector 350 may include a probe 351 and an amplifier 352, for example. The probe 351 may contact the electron beam transmitting member 340 through the main body 331, and may transmit a current caused by secondary electrons collected in the electron beam transmitting member 340 to the amplifier 352. . The amplifier 352 may amplify the current and transmit it to a signal processor (not shown).

The electron detector 360 may be disposed between the electron beam generator 320 and the cover 330 and may surround the electron beam traveling path. The electron detector 360 may collect backscattered electrons and transmit a current caused by the backscattered electrons to a signal processor.

The X-ray detector 370 is disposed inside the first column 310, detects X-rays in the form of energy, and transmits the detection result to a signal processor.

The signal processor may process the current detected from the current detector 350 and the electron detector 360 to form an image. The method can vary.

In addition, the signal processor quantitatively and qualitatively analyzes the components of the part where the electron beam of the substrate S is irradiated in comparison with the energy intensity of X-rays and the detection frequency data for each energy intensity compared to the previously inputted X-ray intrinsic energy data. can do.

The second emission part 400 may be disposed toward the opening 220. The second emission unit 400 may have an aperture, and may emit any one selected from an ion beam, an atomic beam, and a neutron beam to one surface of the substrate S through the aperture and the opening 220, Secondary ions and X-rays emitted from one surface of the substrate S may be collected. Hereinafter, the second emission unit 400 will be described based on emission of the ion beam into the atmosphere.

The second emission unit 400 includes a second column 410 installed obliquely in the chamber unit 200 to face the opening 220, an ion beam generator 420 disposed inside the second column 410, and an opening It may include a second cover 430 mounted on one side of the second column 410 facing the 220 and having an aperture formed to pass the ion beam.

The second emission unit 400 may further include an ion detector 440, an X-ray detector 450, and a signal processor (not shown). Of course, the configuration of the second emission unit 400 may be various.

The second column 410 may face one surface of the substrate S through the opening 220. The second column 410 may have a lower portion disposed inside the chamber part 200. The second column 410 may have an ion beam generator 420 disposed therein, and a lower portion may be opened downward. The second cover 430 may be mounted under the second column 410. The inside of the second column 410 may be controlled with a high vacuum, such as 10 ^-6 to 10 ^-9 torr. The second column 410 may be connected to a vacuum pump (not shown).

The ion beam generator 420 may include an ion source 421 and a plurality of lenses 422. The ion source 421 may emit ions. For example, the plurality of lenses 422 may include an electrostatic lens, a scan lens, and a magnetic lens, and may shape and emit ions in the form of a beam. In addition, the ion beam generator 420 may further include an extraction electrode and an electrostatic deflection coil. Of course, the configuration of the ion beam generator 420 may vary. The ion beam can be used to generate an image of an object to be processed and to cut a thin film formed on the object to be processed.

The second cover 430 may include a main body 431 and a joint member 432. The main body 431 may be detachably coupled to the open lower portion of the second column 410 by the joint member 432. An aperture may be formed in the center of the main body 431. The aperture may be positioned between the ion beam generator 420 and the opening 220. The aperture can have a size of tens of micrometers or less. For example, the aperture may have a size of 10 micrometers or more and less than 100 micrometers. The aperture may surround the ion beam traveling path L2. The aperture can pass ion beams, secondary ions and X-rays.

The ion detector 440 may be disposed between the ion beam generator 420 and the cover 430 and may surround the ion beam traveling path L2. The ion detector 440 may collect secondary ions that may be emitted from the substrate S, and transmit a current caused thereby to a signal processor.

The X-ray detector 450 is disposed inside the second column 410, detects X-rays in the form of energy, and transmits the detection result to a signal processor.

The signal processor may process the current detected from the ion detector 440 to form an image. The method can vary.

In addition, the signal processor quantitatively and qualitatively analyzes the components of the part where the electron beam of the substrate S is irradiated in comparison with the energy intensity of X-rays and the detection frequency data for each energy intensity compared to the previously inputted X-ray intrinsic energy data. can do.

Meanwhile, the configuration of the second emission unit 400 for emitting an atomic beam and a neutron beam into the atmosphere may be various. In addition, the configuration of the second emission unit 400 for emitting an atomic beam and a neutron beam into the atmosphere may be similarly applied to the configuration of the second emission unit 400 for emitting an ion beam. Therefore, the description is omitted.

The source supply unit 500 may be installed so that at least a portion of the source supply unit 500 passes through the chamber unit 200, and the injection port may be formed to be inclined around the opening 220. The source supply unit 500 may include a source supply pipe 510, a source supply source 520, and a carrier gas supply source (not shown).

The source supply pipe 510 is installed so as to penetrate the wall 210 of the chamber part 200, and the injection hole may be opened toward one surface of the substrate S. The source supply pipe 510 penetrates the side wall of the chamber part 200, extends into the inside of the side wall, and then extends from the inside of the lower wall of the chamber part 200 toward the opening 220, and the injection hole is the opening 220. ) Can be opened downward from the perimeter. The source supply pipe 510 is connected to the source supply source 520 and may receive a thin film deposition source from the source supply source 520. The thin film deposition source may include a metal source. A deposition atmosphere may be formed under the opening 220 by the thin film deposition source sprayed from the injection hole to one surface of the substrate S.

Since the source supply pipe 510 is formed inside the lower wall of the chamber part 200, the opening 220 of the chamber part 200 can be located at a height of tens to hundreds of micrometers from one surface of the substrate S. have.

The source supply source 520 may contain a source for thin film deposition therein in a solid powder state. The source supply source 520 may vaporize the source for thin film deposition and supply it to the source supply pipe 510. The vaporized thin film deposition source may be smoothly transported to the source supply pipe 510 by a carrier gas. The carrier gas may be supplied from a carrier gas supply source connected to the source supply source 520.

The inspection unit (not shown) can inspect the presence or absence of defects and the type of defects in the substrate S using the image and component information of the substrate S generated by at least one of the first and second emission units 300 and 400. have.

For example, the inspection unit compares the image and component information of the substrate S input from the first and second emission units 300 and 400 with the reference image and component information previously input, and the electron beam and the ion beam of the substrate S are irradiated. It is possible to check the presence or absence of defects and types of defects in the area.

The inspection unit may inspect the presence or absence of defects in a region irradiated with the electron beam on one surface of the substrate S using only the image and component information of the substrate S received from the first emission unit 300 and types of defects. In addition, the inspection unit may inspect the presence or absence of defects in a region irradiated with the electron beam on one surface of the substrate S using only the image and component information of the substrate S received from the second emission unit 400 and the type of defects. In addition, the inspection unit collects the image and component information of the substrate S input from the first and second emission units 300 and 400, and the electron beam and ion beam on one side of the substrate S are irradiated with the collected information. You can check the presence or absence of defects in the area and the types of defects.

The presence or absence of a defect may mean whether a defect has occurred on one surface of the substrate S. The types of defects can vary, such as open defects, short circuits, and foreign objects.

The control unit (not shown) cuts the thin film on the substrate S according to the type of defect of the substrate S, or forms a thin film on the substrate S, so that the second emission unit 400 and the source supply unit You can control the operation of 500. In addition, the control unit may control operations of other components of the processing apparatus in addition to the second emission unit 400 and the source supply unit 500.

For example, when the defect of the substrate S is an open defect, the control unit operates the source supply unit 500 to form a deposition atmosphere at the defect location so that a thin film can be formed at the defect location on the substrate S, and a second emission By operating the unit 400 to irradiate an ion beam to the defect location to decompose the thin film deposition source, a thin film may be formed at the defect location.

In addition, when the defect of the substrate S is a short circuit or foreign material inflow, the control unit operates the second emission unit 400 to irradiate the ion beam to the defect location so that the thin film can be cut at the defect location on the substrate S. , It is possible to cut the thin film to a predetermined area and a predetermined depth. In this case, the intensity of the ion beam for cutting and the intensity of the ion beam for thin film formation may be different from each other.

When the thin film is cut, if necessary, a new thin film can be formed at the location where the thin film was cut. For example, when the type of defect is foreign material inflow, the control unit controls the operation of the second discharge unit 400 and the source supply unit 500 to cut the thin film at the defect location, and then form a new thin film at the cut location. I can.

2 is a view for explaining a processing method according to an embodiment of the present invention.

FIG. 2A is a view showing an electron beam irradiating the thin film F formed on one surface of the substrate S, and FIG. 2B is a thin film F formed on one surface of the substrate S. ) Is a diagram showing the state of investigation. In addition, (c) of FIG. 2 is a diagram showing a state of cutting a defect portion of the thin film (F) by irradiating an ion beam to the thin film (F) formed on one surface of the substrate (S), and FIG. It is a diagram showing a state in which a new thin film is formed by irradiating an ion beam onto the defective area while supplying a deposition source to the defective area. In the drawings, secondary particles mean secondary electrons, backscattered electrons, and secondary ions. At this time, the appearance of X-ray emission in the drawing is omitted.

A processing method to which the above-described processing apparatus according to an embodiment of the present invention is applied will be described with reference to FIGS. 1 and 2.

The processing method according to an embodiment of the present invention is a method of treating an object to be processed in the atmosphere, and a process of providing the chamber part 200 with a vacuum formed therein, and removing the object to be processed in the atmosphere facing the chamber part 200. The process of preparing, the process of acquiring image and component information of the object to be processed using the beam emitted through the chamber part 200, the process of inspecting the existence of defects and the type of the object to be processed, and emission through the chamber part 200 And a process of cutting a thin film on the object to be processed or forming a thin film on the object to be processed according to the type of defect using the beam.

First, a chamber part 200 having a vacuum formed therein is provided. Thereafter, an object to be processed, such as a substrate S, is prepared in the atmosphere facing the chamber unit 200. In this case, the height of the separation between the opening 220 of the chamber part 200 and one surface, for example, the upper surface of the substrate S may be tens to several hundred micrometers.

Thereafter, an image of the substrate S and component information are obtained by using the beam emitted through the chamber unit 200. The beam may include at least one of an electron beam and an ion beam. Alternatively, the beam may include at least one of an electron beam, an ion beam, an atomic beam, and a neutron beam.

At this time, the process of acquiring the image and component information of the substrate S is a process of generating at least one of an electron beam and an ion beam in at least one of the first and second emission units 300 and 400 connected to the chamber unit 200 , The process of emitting at least one of an electron beam and an ion beam to one surface of the substrate S through the opening 220 of the chamber part 200, and emitted from the substrate S through the opening 220 of the chamber part 200 A process of collecting at least one of electrons and ions and X-rays, and a process of generating an image and component information of the substrate S using at least one of electrons and ions and X-rays. Electrons may include secondary electrons and backscatter electrons. The ions may include secondary ions.

Specifically, the first emission unit 300 is operated to generate an electron beam, and the electron beam is incident on the substrate S through the opening 220 (see FIG. 2A). In addition, the second emission unit 400 is operated to generate an ion beam, and the ion beam is incident on the substrate S through the opening 220 (see FIG. 2(b)). In this case, only one of the electron beams and the ion beams may be selectively performed. In addition, the incidence of the electron beam and the incidence of the ion beam may be performed in any order. Hereinafter, an embodiment will be described on the basis of performing both the incident of the electron beam and the incident of the ion beam in an arbitrary order.

When an electron beam is incident on one surface of the substrate S, secondary electrons, backscattered electrons, and X-rays may be emitted from the one surface of the substrate S. In addition, when an ion beam is incident on one surface of the substrate S, secondary ions and X-rays may be emitted from the one surface of the substrate S.

And after detecting at least one of electrons and ions collected into the chamber 200 and X-rays by at least one of the first and second emission units 300 and 400, at least one of electrons and ions and X-rays An image and component information of the substrate S is generated using and transmitted to the inspection unit.

Meanwhile, the second emission unit 400 may be operated to generate any one selected from an atomic beam and a neutron beam, and an atomic beam or a neutron beam may be incident on the substrate S through the opening 220, Secondary ions and X-rays emitted from the substrate S may be collected into the chamber unit 200.

Thereafter, the inspection unit inspects the presence or absence of defects and types of defects on the substrate S.

That is, the presence or absence of defects and the type of defects of the substrate S are determined by comparing the substrate S image and component information with the previously input reference information. Here, the reference information may include a reference image and component information previously input to the inspection unit. Specifically, the inspection unit compares the image and component information of the substrate S input from the first and second emission units 300 and 400 with the reference image and component information previously input, and the electron beam and the ion beam of the substrate S The presence or absence of defects in the irradiated area and types of defects can be inspected.

Thereafter, a thin film on the substrate S is cut or a thin film is formed on the substrate S according to the type of defect of the substrate S by using the beam emitted through the chamber unit 200.

In this case, the process of cutting the thin film may include a process of cutting the defect area by emitting an ion beam to the defect area of the thin film (see FIG. 2(c)). In addition, the process of forming a thin film is a process of injecting a thin film deposition gas to a defect generation area (also referred to as a'defect location') of the thin film through a source supply pipe 510 connected to the chamber unit 200, and to the defect generation area. It may include a process of depositing a thin film by emitting an ion beam (see (d) of FIG. 2).

That is, if the defect of the substrate S is an open defect, a thin film deposition source is sprayed to the defect location of the substrate S, and an ion beam is irradiated to the defect location to form a thin film.

In addition, if the defect of the substrate S is short-circuit and foreign matter inflow, the thin film can be cut to a predetermined area and a predetermined depth by irradiating an ion beam to the defect location. When the thin film is cut, if necessary, a new thin film can be formed at the location where the thin film was cut.

The above-described series of processes may be performed smoothly in order while the substrate S is seated on the support part 100.

Alternatively, a thin film may be deposited on the substrate S by emitting any one selected from an atomic beam and a neutron beam to the defect generation region of the thin film, or the thin film on the substrate S may be cut.

The above embodiments of the present invention are for the purpose of explanation of the present invention and are not intended to limit the present invention. It should be noted that the configurations and methods disclosed in the above embodiments of the present invention will be combined or modified in various forms by combining or intersecting with each other, and modified examples thereof can also be seen as the scope of the present invention. That is, the present invention will be implemented in a variety of different forms within the scope of the claims and the technical idea equivalent thereto, and a person in the technical field to which the present invention corresponds can various embodiments within the scope of the technical idea of the present invention. You will be able to understand.

100: support
200: chamber part
300: first discharge unit
400: second discharge unit
500: source supply

Claims (14)

A processing device for processing an object to be processed in the atmosphere,
A support provided in the atmosphere and capable of seating the object to be treated;
A chamber portion disposed on one side of the support portion and having a portion facing the object to be processed open;
A first discharge part at least partially disposed in the chamber part;
A second discharge part at least partially disposed in the chamber part;
An inspection unit connected to the first and second discharge units and inspecting defects of the object to be processed; And
Includes; a source supply unit connected to the chamber unit so as to spray a source for thin film deposition,
The chamber part is disposed to be spaced apart from the support part, and includes an upper wall, a lower wall, and a side wall to form a vacuum chamber,
The transmission window of the first discharge part and the aperture of the second discharge part are accommodated in the vacuum chamber,
An opening is formed to pass through the lower wall while surrounding the traveling path of the particle beam emitted from the transmission window and the aperture,
The source supply unit includes a source supply pipe extending from the inside of the lower wall, and through which an injection port penetrates into the atmosphere from a circumference of the opening. The method according to claim 1,
The chamber part is disposed above the support part,
A processing apparatus in which the first and second discharge units are disposed to pass through an upper portion of the chamber unit. The method according to claim 2,
The first and second discharge portions are disposed toward the opening,
The injection port is formed to be inclined treatment device. delete The method according to claim 1,
The first emission unit may emit an electron beam to one surface of the object to be processed through the transmission window and the opening, and may collect electrons and X-rays emitted from one surface of the object to be processed,
The second emission unit may emit an ion beam to one surface of the object to be processed through the aperture and the opening and collect ions and X-rays emitted from the surface of the object to be processed. The method of claim 5,
The inspection unit inspects the presence or absence of defects and the type of defects of the object to be processed using the image and component information of the object to be processed generated by at least one of the first and second emission units. The method of claim 6,
And a control unit for controlling operations of the second emission unit and the source supply unit to cut a thin film on the object to be processed or to form a thin film on the object according to the type of defect of the object to be processed. The method of claim 5,
The opening has a size of several tens to several hundreds of micrometers, and surrounds the path of the electron beam and the ion beam. The method of claim 3,
The source supply unit,
Processing apparatus comprising a; a source for thin film deposition is stored therein, a source source connected to the source supply pipe. As a method of treating an object to be treated in air,
Providing a chamber portion in which a vacuum chamber is formed;
Preparing an object to be processed in the atmosphere facing the chamber unit;
Acquiring the image and component information of the object by using a beam emitted from at least one of a transmission window and an aperture disposed in the vacuum chamber of the chamber unit and passing through an opening formed in the lower wall of the chamber unit;
Inspecting the presence or absence of defects and types of defects of the object to be processed;
A process of cutting a thin film on the object to be processed according to the type of the defect and forming a thin film on the object by using a beam emitted from the aperture disposed in the vacuum chamber of the chamber unit and passing through the opening; and ,
The process of forming the thin film,
Spraying a thin film deposition gas into a defect-prone region of the thin film in the atmosphere through a source supply pipe extending from the inside of the lower wall of the chamber unit and having an injection hole penetrated into the atmosphere from the periphery of the opening;
Processing method comprising a; process of depositing a thin film by emitting an ion beam in the defect generation region. The method of claim 10,
The process of obtaining the image and component information of the object to be processed,
Generating at least one of an electron beam and an ion beam in at least one of the first and second emission units connected to the chamber unit;
Emitting at least one of an electron beam and an ion beam to one surface of the object to be processed through an opening of the chamber unit from at least one of the transmission window and the aperture provided in the first and second emission units;
Collecting X-rays and at least one of electrons and ions emitted from the object to be processed through the opening of the chamber part;
And generating an image and component information of the object to be processed using at least one of the electrons and ions and X-rays. The method of claim 10,
The process of inspecting the presence or absence of the defect and the type of defect,
And comparing the image and component information of the object to be processed with pre-input reference information, and determining the presence or absence of a defect and the type of the object to be processed. The method of claim 10,
The process of cutting the thin film,
And cutting the defect generation region by emitting an ion beam to the defect generation region of the thin film. delete

Images