KR102316326B1 - Display device using semiconductor light emitting device - Google Patents

Abstract

The present invention relates to a display device using a semiconductor light emitting device, and more particularly, to a display device using a semiconductor light emitting device. A display device according to the present invention includes a substrate including a driving thin film transistor, a semiconductor light emitting device including a first conductive electrode and a second conductive electrode, and covering the driving thin film transistor, the semiconductor light emitting device a planarization layer having an accommodating hole, and an electrode pattern connected to the first conductive electrode and the second conductive electrode and extending to the driving thin film transistor through the planarization layer, the electrode pattern The silver is characterized in that it is made of light transmissive and has an uneven portion formed on at least a part of the surface.

Description

Display device using semiconductor light emitting device {DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present invention relates to a display device, and more particularly, to a display device using a semiconductor light emitting device.

Recently, in the field of display technology, a display device having excellent characteristics such as a thin film type and a flexible type has been developed. In contrast, currently commercialized main displays are represented by LCD (Liguid Crystal Display) and AMOLED (Active Matrix Organic Light Emitting Diodes). However, in the case of LCD, there are problems in that the response time is not fast and it is difficult to implement flexible, and in the case of AMOLED, there are weaknesses in that the lifespan is short and the mass production yield is not good.

On the other hand, a light emitting diode (Light Emitting Diode: LED) is a well-known semiconductor light emitting device that converts electric current into light. It has been used as a light source for display images of electronic devices including communication devices. Accordingly, a method for solving the above problems by implementing a display using the semiconductor light emitting device may be proposed.

Therefore, recently, research and development of a display device using a micro semiconductor light emitting device has been conducted, and since such a display device has high image quality and high reliability, it is in the spotlight as a next-generation display. However, since such a display device uses a micro light emitting device, there is a problem in that luminous efficiency or contrast is lowered when a lot of phosphors or wirings are exposed to the outside.

Accordingly, the present invention proposes a display device of a new structure that is based on a semiconductor light emitting device having a size of several to several tens of micrometers, while easy wiring, and improving light extraction efficiency.

SUMMARY OF THE INVENTION One object of the present invention is to provide a structure in which a wiring process for connecting a light emitting device to a circuit in a display device using a semiconductor light emitting device is easy.

Another object of the present invention is to provide a display device having a structure capable of securing optical performance while easy wiring.

In the display device according to the present invention, in a chip in cup (CIC) in which a semiconductor light emitting device is accommodated in a cup-shaped accommodating hole, as a concave-convex structure is formed under a transparent wiring or a semiconductor light emitting device, , to make the wiring process easier while improving the light extraction efficiency.

As a specific example, the display device includes a substrate including a driving thin film transistor, a semiconductor light emitting device including a first conductive electrode and a second conductive electrode, and the driving thin film transistor is formed to cover the semiconductor light emitting device. and a planarization layer having a receiving hole in which the device is accommodated, and an electrode pattern connected to the first and second conductive electrodes and extending to the driving thin film transistor through the planarization layer. The electrode pattern is made of light-transmitting, and has an uneven portion formed on at least a portion of the surface.

In an embodiment, the electrode pattern includes a pixel electrode pattern connected to the first conductive electrode and extending to the driving thin film transistor through a first hole of the planarization layer, and connected to the second conductive electrode and a common electrode pattern extending to the driving thin film transistor through the second hole of the planarization layer. The concave-convex portions may be respectively formed on the pixel electrode pattern and the common electrode pattern.

The concavo-convex portion may be formed at a portion where the pixel electrode pattern and the first conductive electrode overlap. The concave-convex portion may be formed at a portion where the common electrode pattern and the second conductive electrode overlap. The concavo-convex portion may be formed in a portion where the pixel electrode pattern and the common electrode pattern cover the planarization layer.

In an embodiment, the first conductive type electrode and the second conductive type electrode are each formed to be transparent. A plurality of grooves corresponding to the recessed portion of the concave-convex portion may be formed in at least one of the first conductive electrode and the second conductive electrode.

In an embodiment, the semiconductor light emitting device is attached to the bottom of the receiving hole by an adhesive layer. A plurality of grooves may be formed on a lower surface of the semiconductor light emitting device, and the adhesive layer may include a plurality of protrusions filled in the grooves. A reflective film may be formed under the adhesive layer.

In an embodiment, the first conductive electrode and the second conductive electrode are formed of a material having a refractive index greater than that of the electrode pattern. The planarization layer may be formed of a light-transmitting photosensitive material.

In the display device according to the present invention, by disposing the semiconductor light emitting device in the receiving hole of the planarization layer, the pixels are separated by barrier ribs. As the semiconductor light emitting device is electrically connected to the wiring in the accommodating hole as described above, alignment of the semiconductor light emitting device is facilitated, and thus the display device can be manufactured with high precision.

In addition, according to the present invention, the brightness of the display is improved through the concavo-convex portion, and furthermore, the power consumption is improved. In addition, as the concavo-convex portion is formed on the electrode pattern, the concavo-convex portion may be simply implemented by etching.

In addition, according to the present invention, a groove is formed on the lower surface of the semiconductor light emitting device, and as the adhesive layer fills the groove, the adhesive strength of the adhesive layer is improved, and light reflected from the adhesive layer to the semiconductor light emitting device is easier on the adhesive layer. to be extracted.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.
FIG. 2 is a partially enlarged view of part A of FIG. 1 , and FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2 .
4 is a conceptual diagram illustrating the flip chip type semiconductor light emitting device of FIG. 3 .
5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.
6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.
7 is a perspective view illustrating another embodiment of a display device using the semiconductor light emitting device of the present invention.
FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 ;
9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8 .
10 is a partial perspective view for explaining another embodiment of the present invention.
11 is a circuit diagram for explaining the configuration of the pixel shown in FIG. 10 .
12 is a cross-sectional view taken along line EE of FIG. 10 .
13, 14 and 15 are cross-sectional views illustrating still other embodiments of the present invention.

Hereinafter, the embodiments disclosed in the present specification will be described in detail with reference to the accompanying drawings, but the same or similar components are assigned the same reference numerals regardless of reference numerals, and overlapping descriptions thereof will be omitted. The suffixes "module" and "part" for the components used in the following description are given or mixed in consideration of only the ease of writing the specification, and do not have a meaning or role distinct from each other by themselves. In addition, in describing the embodiments disclosed in the present specification, if it is determined that detailed descriptions of related known technologies may obscure the gist of the embodiments disclosed in the present specification, the detailed description thereof will be omitted. In addition, it should be noted that the accompanying drawings are only for easy understanding of the embodiments disclosed in the present specification, and should not be construed as limiting the technical spirit disclosed herein by the accompanying drawings.

It is also understood that when an element, such as a layer, region, or substrate, is referred to as being “on” another component, it may be directly on the other element or intervening elements in between. There will be.

The display device described in this specification includes a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC. , Tablet PC, Ultra Book, digital TV, desktop computer, and the like. However, it will be readily apparent to those skilled in the art that the configuration according to the embodiment described in this specification may be applied to a display capable device even in a new product form to be developed later.

1 is a conceptual diagram illustrating an embodiment of a display device using a semiconductor light emitting device of the present invention.

As illustrated, information processed by the control unit of the display apparatus 100 may be displayed using a flexible display.

The flexible display includes a display that can be bent, bent, twisted, folded, or rolled by an external force. For example, the flexible display may be a display manufactured on a thin and flexible substrate that can be bent, bent, folded, or rolled like paper while maintaining the display characteristics of a conventional flat panel display.

In a state in which the flexible display is not bent (eg, a state having an infinite radius of curvature, hereinafter referred to as a first state), the display area of the flexible display becomes a flat surface. In a state bent by an external force in the first state (eg, a state having a finite radius of curvature, hereinafter referred to as a second state), the display area may be a curved surface. As shown, the information displayed in the second state may be visual information output on the curved surface. Such visual information is implemented by independently controlling the light emission of sub-pixels arranged in a matrix form. The unit pixel means a minimum unit for realizing one color.

The unit pixel of the flexible display may be implemented by a semiconductor light emitting device. In the present invention, a light emitting diode (LED) is exemplified as a type of semiconductor light emitting device that converts current into light. The light emitting diode is formed to have a small size, so that it can serve as a unit pixel even in the second state.

Hereinafter, a flexible display implemented using the light emitting diode will be described in more detail with reference to the drawings.

2 is a partially enlarged view of part A of FIG. 1, FIGS. 3A and 3B are cross-sectional views taken along lines BB and CC of FIG. 2, and FIG. 4 is a conceptual diagram showing the flip-chip type semiconductor light emitting device of FIG. 3A, 5A to 5C are conceptual diagrams illustrating various forms of implementing colors in relation to a flip-chip type semiconductor light emitting device.

2, 3A and 3B , the display device 100 using a passive matrix (PM) type semiconductor light emitting device is exemplified as the display device 100 using a semiconductor light emitting device. However, the examples described below are also applicable to an active matrix (AM) type semiconductor light emitting device.

The display device 100 includes a substrate 110 , a first electrode 120 , a conductive adhesive layer 130 , a second electrode 140 , and a plurality of semiconductor light emitting devices 150 .

The substrate 110 may be a flexible substrate. For example, to implement a flexible display device, the substrate 110 may include glass or polyimide (PI). In addition, any material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET) may be used as long as it has insulating properties and is flexible. Also, the substrate 110 may be made of either a transparent material or an opaque material.

The substrate 110 may be a wiring substrate on which the first electrode 120 is disposed, and thus the first electrode 120 may be located on the substrate 110 .

As shown, the insulating layer 160 may be disposed on the substrate 110 on which the first electrode 120 is positioned, and the auxiliary electrode 170 may be positioned on the insulating layer 160 . In this case, a state in which the insulating layer 160 is laminated on the substrate 110 may be a single wiring board. More specifically, the insulating layer 160 is made of an insulating and flexible material such as polyimide (PI, Polyimide), PET, or PEN, and is integrally formed with the substrate 110 to form a single substrate.

The auxiliary electrode 170 is an electrode that electrically connects the first electrode 120 and the semiconductor light emitting device 150 , is located on the insulating layer 160 , and is disposed to correspond to the position of the first electrode 120 . For example, the auxiliary electrode 170 may have a dot shape and may be electrically connected to the first electrode 120 by an electrode hole 171 penetrating the insulating layer 160 . The electrode hole 171 may be formed by filling the via hole with a conductive material.

Referring to the drawings, the conductive adhesive layer 130 is formed on one surface of the insulating layer 160 , but the present invention is not limited thereto. For example, a layer performing a specific function is formed between the insulating layer 160 and the conductive adhesive layer 130 , or the conductive adhesive layer 130 is disposed on the substrate 110 without the insulating layer 160 . is also possible In a structure in which the conductive adhesive layer 130 is disposed on the substrate 110 , the conductive adhesive layer 130 may serve as an insulating layer.

The conductive adhesive layer 130 may be a layer having adhesiveness and conductivity, and for this purpose, a material having conductivity and a material having adhesiveness may be mixed in the conductive adhesive layer 130 . In addition, the conductive adhesive layer 130 has ductility, thereby enabling a flexible function in the display device.

For this example, the conductive adhesive layer 130 may be an anisotropic conductive film (ACF), an anisotropic conductive paste, a solution containing conductive particles, or the like. The conductive adhesive layer 130 may be configured as a layer that allows electrical interconnection in the Z direction penetrating through the thickness, but has electrical insulation in the horizontal X-Y direction. Accordingly, the conductive adhesive layer 130 may be referred to as a Z-axis conductive layer (however, hereinafter referred to as a 'conductive adhesive layer').

The anisotropic conductive film is a film in which an anisotropic conductive medium is mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the anisotropic conductive medium. Hereinafter, it will be described that heat and pressure are applied to the anisotropic conductive film, but other methods are also possible in order for the anisotropic conductive film to have partial conductivity. In this method, for example, only one of the heat and pressure may be applied or UV curing may be performed.

In addition, the anisotropic conductive medium may be, for example, conductive balls or conductive particles. As shown, in this example, the anisotropic conductive film is a film in which conductive balls are mixed with an insulating base member, and when heat and pressure are applied, only a specific portion has conductivity by the conductive balls. The anisotropic conductive film may be in a state in which the core of the conductive material contains a plurality of particles covered by an insulating film made of a polymer material. . At this time, the shape of the core may be deformed to form a layer in contact with each other in the thickness direction of the film. As a more specific example, heat and pressure are applied to the anisotropic conductive film as a whole, and electrical connection in the Z-axis direction is partially formed by the height difference of the counterpart adhered by the anisotropic conductive film.

As another example, the anisotropic conductive film may be in a state in which an insulating core contains a plurality of particles coated with a conductive material. In this case, the conductive material is deformed (pressed) in the portion to which heat and pressure are applied, so that it has conductivity in the thickness direction of the film. As another example, a form in which the conductive material penetrates the insulating base member in the Z-axis direction to have conductivity in the thickness direction of the film is also possible. In this case, the conductive material may have a pointed end.

As shown, the anisotropic conductive film may be a fixed array anisotropic conductive film (ACF) in which conductive balls are inserted into one surface of the insulating base member. More specifically, the insulating base member is formed of a material having an adhesive property, and the conductive balls are intensively disposed on the bottom of the insulating base member, and when heat and pressure are applied from the base member, it is deformed together with the conductive balls. It has conductivity in the vertical direction.

However, the present invention is not necessarily limited thereto, and the anisotropic conductive film has a form in which conductive balls are randomly mixed in an insulating base member, or is composed of a plurality of layers and conductive balls are arranged on one layer (double- ACF) are all possible.

The anisotropic conductive paste is a combination of a paste and a conductive ball, and may be a paste in which a conductive ball is mixed with an insulating and adhesive base material. Also, a solution containing conductive particles may be a solution containing conductive particles or nano particles.

Referring back to the drawing, the second electrode 140 is spaced apart from the auxiliary electrode 170 and is positioned on the insulating layer 160 . That is, the conductive adhesive layer 130 is disposed on the insulating layer 160 in which the auxiliary electrode 170 and the second electrode 140 are located.

After the conductive adhesive layer 130 is formed in the state where the auxiliary electrode 170 and the second electrode 140 are positioned on the insulating layer 160, the semiconductor light emitting device 150 is connected in a flip-chip form by applying heat and pressure. In this case, the semiconductor light emitting device 150 is electrically connected to the first electrode 120 and the second electrode 140 .

Referring to FIG. 4 , the semiconductor light emitting device may be a flip chip type light emitting device.

For example, the semiconductor light emitting device includes a p-type electrode 156 , a p-type semiconductor layer 155 on which the p-type electrode 156 is formed, an active layer 154 formed on the p-type semiconductor layer 155 , and an active layer ( It includes an n-type semiconductor layer 153 formed on the 154 , and an n-type electrode 152 spaced apart from the p-type electrode 156 in the horizontal direction on the n-type semiconductor layer 153 . In this case, the p-type electrode 156 may be electrically connected to the auxiliary electrode 170 and the conductive adhesive layer 130 , and the n-type electrode 152 may be electrically connected to the second electrode 140 .

Referring again to FIGS. 2, 3A and 3B , the auxiliary electrode 170 is formed to be elongated in one direction, so that one auxiliary electrode may be electrically connected to the plurality of semiconductor light emitting devices 150 . For example, p-type electrodes of left and right semiconductor light emitting devices with respect to the auxiliary electrode may be electrically connected to one auxiliary electrode.

More specifically, the semiconductor light emitting device 150 is press-fitted into the conductive adhesive layer 130 by heat and pressure, and through this, between the p-type electrode 156 and the auxiliary electrode 170 of the semiconductor light emitting device 150 . Only a portion and a portion between the n-type electrode 152 and the second electrode 140 of the semiconductor light emitting device 150 have conductivity, and there is no press-fitting of the semiconductor light emitting device in the remaining portion, so that the semiconductor light emitting device does not have conductivity. As described above, the conductive adhesive layer 130 not only interconnects the semiconductor light emitting device 150 and the auxiliary electrode 170 and between the semiconductor light emitting device 150 and the second electrode 140 , but also forms an electrical connection.

In addition, the plurality of semiconductor light emitting devices 150 constitute a light emitting device array, and the phosphor layer 180 is formed on the light emitting device array.

The light emitting device array may include a plurality of semiconductor light emitting devices having different luminance values. Each semiconductor light emitting device 150 constitutes a unit pixel and is electrically connected to the first electrode 120 . For example, there may be a plurality of first electrodes 120 , the semiconductor light emitting devices may be arranged in, for example, several columns, and the semiconductor light emitting devices of each column may be electrically connected to any one of the plurality of first electrodes.

In addition, since the semiconductor light emitting devices are connected in a flip-chip form, semiconductor light emitting devices grown on a transparent dielectric substrate can be used. In addition, the semiconductor light emitting devices may be, for example, nitride semiconductor light emitting devices. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size.

As illustrated, a barrier rib 190 may be formed between the semiconductor light emitting devices 150 . In this case, the partition wall 190 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 130 . For example, by inserting the semiconductor light emitting device 150 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 190 may have reflective properties and increase contrast even without a separate black insulator.

As another example, a reflective barrier rib may be separately provided as the barrier rib 190 . In this case, the barrier rib 190 may include a black or white insulator depending on the purpose of the display device. When the barrier ribs made of a white insulator are used, reflectivity may be increased, and when the barrier ribs made of a black insulator are used, it is possible to have reflective properties and increase contrast.

The phosphor layer 180 may be located on the outer surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and the phosphor layer 180 performs a function of converting the blue (B) light into a color of a unit pixel. The phosphor layer 180 may be a red phosphor 181 or a green phosphor 182 constituting an individual pixel.

That is, a red phosphor 181 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 151 at a position forming a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 182 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 151 . In addition, only the blue semiconductor light emitting device 151 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel. More specifically, a phosphor of one color may be stacked along each line of the first electrode 120 . Accordingly, one line in the first electrode 120 may be an electrode for controlling one color. That is, red (R), green (G), and blue (B) may be sequentially disposed along the second electrode 140 , thereby realizing a unit pixel.

However, the present invention is not necessarily limited thereto, and instead of the phosphor, the semiconductor light emitting device 150 and the quantum dot (QD) are combined to implement unit pixels of red (R), green (G), and blue (B). have.

In addition, a black matrix 191 may be disposed between each of the phosphor layers to improve contrast. That is, the black matrix 191 may improve contrast of light and dark.

However, the present invention is not necessarily limited thereto, and other structures for implementing blue, red, and green colors may be applied.

Referring to FIG. 5A , each semiconductor light emitting device 150 mainly uses gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit a variety of light including blue light. It can be implemented as a device.

In this case, the semiconductor light emitting device 150 may be a red, green, and blue semiconductor light emitting device to form a sub-pixel, respectively. For example, red, green, and blue semiconductor light emitting devices R, G, and B are alternately disposed, and unit pixels of red, green, and blue are formed by the red, green and blue semiconductor light emitting devices. The pixels form one pixel, through which a full-color display can be realized.

Referring to FIG. 5B , the semiconductor light emitting device may include a white light emitting device W in which a yellow phosphor layer is provided for each device. In this case, a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 may be provided on the white light emitting device W to form a unit pixel. In addition, a unit pixel may be formed on the white light emitting device W by using a color filter in which red, green, and blue are repeated.

Referring to FIG. 5C , a structure in which a red phosphor layer 181 , a green phosphor layer 182 , and a blue phosphor layer 183 are provided on the ultraviolet light emitting device UV is also possible. In this way, the semiconductor light emitting device can be used in the entire region not only for visible light but also for ultraviolet (UV) light, and can be extended to form a semiconductor light emitting device in which ultraviolet (UV) can be used as an excitation source of the upper phosphor. .

Referring back to this example, the semiconductor light emitting device 150 is positioned on the conductive adhesive layer 130 to constitute a unit pixel in the display device. Since the semiconductor light emitting device 150 has excellent luminance, individual unit pixels can be configured even with a small size. The size of the individual semiconductor light emitting device 150 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

In addition, even when a square semiconductor light emitting device 150 having a side length of 10 μm is used as a unit pixel, sufficient brightness to form a display device appears. Accordingly, for example, when the unit pixel is a rectangular pixel having one side of 600 μm and the other side of 300 μm, the distance between the semiconductor light emitting devices is relatively large. Accordingly, in this case, it is possible to implement a flexible display device having HD image quality.

The display device using the semiconductor light emitting device described above can be manufactured by a new type of manufacturing method. Hereinafter, the manufacturing method will be described with reference to FIG. 6 .

6 is a cross-sectional view illustrating a method of manufacturing a display device using the semiconductor light emitting device of the present invention.

Referring to this figure, first, the conductive adhesive layer 130 is formed on the insulating layer 160 on which the auxiliary electrode 170 and the second electrode 140 are positioned. An insulating layer 160 is laminated on the first substrate 110 to form one substrate (or wiring board), and the wiring substrate includes a first electrode 120 , an auxiliary electrode 170 , and a second electrode 140 . this is placed In this case, the first electrode 120 and the second electrode 140 may be disposed in a mutually orthogonal direction. In addition, in order to implement a flexible display device, the first substrate 110 and the insulating layer 160 may each include glass or polyimide (PI).

The conductive adhesive layer 130 may be implemented by, for example, an anisotropic conductive film, and for this purpose, the anisotropic conductive film may be applied to the substrate on which the insulating layer 160 is located.

Next, the second substrate 112 corresponding to the positions of the auxiliary electrode 170 and the second electrodes 140 and on which the plurality of semiconductor light emitting devices 150 constituting individual pixels are located is formed with the semiconductor light emitting device 150 . ) is disposed to face the auxiliary electrode 170 and the second electrode 140 .

In this case, the second substrate 112 is a growth substrate on which the semiconductor light emitting device 150 is grown, and may be a sapphire substrate or a silicon substrate.

When the semiconductor light emitting device is formed in a wafer unit, the semiconductor light emitting device can be effectively used in a display device by having an interval and a size that can form a display device.

Then, the wiring board and the second board 112 are thermocompression-bonded. For example, the wiring substrate and the second substrate 112 may be thermocompression-bonded by applying an ACF press head. The wiring substrate and the second substrate 112 are bonded by the thermocompression bonding. Due to the properties of the anisotropic conductive film having conductivity by thermocompression bonding, only the portion between the semiconductor light emitting device 150 and the auxiliary electrode 170 and the second electrode 140 has conductivity, and through this, the electrodes and the semiconductor light emission. The device 150 may be electrically connected. At this time, the semiconductor light emitting device 150 is inserted into the anisotropic conductive film, through which a barrier rib may be formed between the semiconductor light emitting devices 150 .

Then, the second substrate 112 is removed. For example, the second substrate 112 may be removed using a laser lift-off (LLO) method or a chemical lift-off (CLO) method.

Finally, the second substrate 112 is removed to expose the semiconductor light emitting devices 150 to the outside. If necessary, a transparent insulating layer (not shown) may be formed by coating silicon oxide (SiOx) or the like on the wiring board to which the semiconductor light emitting device 150 is coupled.

In addition, the method may further include forming a phosphor layer on one surface of the semiconductor light emitting device 150 . For example, the semiconductor light emitting device 150 is a blue semiconductor light emitting device that emits blue (B) light, and a red or green phosphor for converting the blue (B) light into the color of the unit pixel is the blue semiconductor light emitting device. A layer may be formed on one surface of the device.

The manufacturing method or structure of the display device using the semiconductor light emitting device described above may be modified in various forms. As an example, a vertical semiconductor light emitting device may also be applied to the display device described above. Hereinafter, a vertical structure will be described with reference to FIGS. 5 and 6 .

In addition, in the modification or embodiment described below, the same or similar reference numerals are assigned to the same or similar components as in the previous example, and the description is replaced with the first description.

7 is a perspective view showing another embodiment of a display device using the semiconductor light emitting device of the present invention, FIG. 8 is a cross-sectional view taken along line DD of FIG. 7 , and FIG. 9 is a conceptual diagram illustrating the vertical semiconductor light emitting device of FIG. 8 . am.

Referring to the drawings, the display device may be a display device using a passive matrix (PM) type vertical semiconductor light emitting device.

The display device includes a substrate 210 , a first electrode 220 , a conductive adhesive layer 230 , a second electrode 240 , and a plurality of semiconductor light emitting devices 250 .

The substrate 210 is a wiring substrate on which the first electrode 220 is disposed, and may include polyimide (PI) to implement a flexible display device. In addition, any material that has insulating properties and is flexible may be used.

The first electrode 220 is positioned on the substrate 210 and may be formed as a bar-shaped electrode long in one direction. The first electrode 220 may serve as a data electrode.

The conductive adhesive layer 230 is formed on the substrate 210 on which the first electrode 220 is positioned. Like a display device to which a flip chip type light emitting element is applied, the conductive adhesive layer 230 is an anisotropic conductive film (ACF), an anisotropic conductive paste, and a solution containing conductive particles. ), and so on. However, in this embodiment as well, a case in which the conductive adhesive layer 230 is implemented by an anisotropic conductive film is exemplified.

After the anisotropic conductive film is positioned on the substrate 210 in a state where the first electrode 220 is positioned, when the semiconductor light emitting device 250 is connected by applying heat and pressure, the semiconductor light emitting device 250 is the first It is electrically connected to the electrode 220 . In this case, the semiconductor light emitting device 250 is preferably disposed on the first electrode 220 .

The electrical connection is created because, as described above, the anisotropic conductive film has conductivity in the thickness direction when heat and pressure are applied in part. Accordingly, the anisotropic conductive film is divided into a conductive portion 231 and a non-conductive portion 232 in the thickness direction.

In addition, since the anisotropic conductive film contains an adhesive component, the conductive adhesive layer 230 implements not only electrical connection but also mechanical bonding between the semiconductor light emitting device 250 and the first electrode 220 .

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. The size of such an individual semiconductor light emitting device 250 may have a side length of 80 μm or less, and may be a rectangular or square device. In the case of a rectangle, the size may be 20X80㎛ or less.

The semiconductor light emitting device 250 may have a vertical structure.

A plurality of second electrodes 240 are disposed between the vertical semiconductor light emitting devices in a direction crossing the longitudinal direction of the first electrode 220 and electrically connected to the vertical semiconductor light emitting device 250 .

Referring to FIG. 9 , the vertical semiconductor light emitting device includes a p-type electrode 256 , a p-type semiconductor layer 255 formed on the p-type electrode 256 , and an active layer 254 formed on the p-type semiconductor layer 255 . ), an n-type semiconductor layer 253 formed on the active layer 254 , and an n-type electrode 252 formed on the n-type semiconductor layer 253 . In this case, the lower p-type electrode 256 may be electrically connected to the first electrode 220 and the conductive adhesive layer 230 , and the upper n-type electrode 252 may be a second electrode 240 to be described later. ) can be electrically connected to. The vertical semiconductor light emitting device 250 has a great advantage in that the size of the chip can be reduced because electrodes can be arranged up and down.

Referring back to FIG. 8 , a phosphor layer 280 may be formed on one surface of the semiconductor light emitting device 250 . For example, the semiconductor light emitting device 250 is a blue semiconductor light emitting device 251 emitting blue (B) light, and a phosphor layer 280 for converting the blue (B) light into the color of a unit pixel is provided. can be In this case, the phosphor layer 280 may be a red phosphor 281 and a green phosphor 282 constituting individual pixels.

That is, a red phosphor 281 capable of converting blue light into red (R) light may be stacked on the blue semiconductor light emitting device 251 at a position constituting a unit pixel of red color, and a position constituting a unit pixel of green color In , a green phosphor 282 capable of converting blue light into green (G) light may be stacked on the blue semiconductor light emitting device 251 . In addition, only the blue semiconductor light emitting device 251 may be used alone in the portion constituting the blue unit pixel. In this case, unit pixels of red (R), green (G), and blue (B) may form one pixel.

However, the present invention is not necessarily limited thereto, and as described above in a display device to which a flip chip type light emitting device is applied, other structures for realizing blue, red, and green may be applied.

Referring back to the present embodiment, the second electrode 240 is positioned between the semiconductor light emitting devices 250 and is electrically connected to the semiconductor light emitting devices 250 . For example, the semiconductor light emitting devices 250 may be arranged in a plurality of columns, and the second electrode 240 may be located between the columns of the semiconductor light emitting devices 250 .

Since the distance between the semiconductor light emitting devices 250 constituting individual pixels is sufficiently large, the second electrode 240 may be positioned between the semiconductor light emitting devices 250 .

The second electrode 240 may be formed as a bar-shaped electrode long in one direction, and may be disposed in a direction perpendicular to the first electrode.

Also, the second electrode 240 and the semiconductor light emitting device 250 may be electrically connected to each other by a connection electrode protruding from the second electrode 240 . More specifically, the connection electrode may be an n-type electrode of the semiconductor light emitting device 250 . For example, the n-type electrode is formed as an ohmic electrode for ohmic contact, and the second electrode covers at least a portion of the ohmic electrode by printing or deposition. Through this, the second electrode 240 and the n-type electrode of the semiconductor light emitting device 250 may be electrically connected.

As illustrated, the second electrode 240 may be positioned on the conductive adhesive layer 230 . In some cases, a transparent insulating layer (not shown) including silicon oxide (SiOx) may be formed on the substrate 210 on which the semiconductor light emitting device 250 is formed. When the second electrode 240 is positioned after the transparent insulating layer is formed, the second electrode 240 is positioned on the transparent insulating layer. In addition, the second electrode 240 may be formed to be spaced apart from the conductive adhesive layer 230 or the transparent insulating layer.

If a transparent electrode such as indium tin oxide (ITO) is used to position the second electrode 240 on the semiconductor light emitting device 250, the ITO material has a problem of poor adhesion to the n-type semiconductor layer. have. Accordingly, the present invention has the advantage of not using a transparent electrode such as ITO by locating the second electrode 240 between the semiconductor light emitting devices 250 . Therefore, it is possible to improve light extraction efficiency by using a conductive material having good adhesion to the n-type semiconductor layer as a horizontal electrode without being constrained by selection of a transparent material.

As illustrated, a barrier rib 290 may be positioned between the semiconductor light emitting devices 250 . That is, in order to isolate the semiconductor light emitting devices 250 constituting individual pixels, a barrier rib 290 may be disposed between the vertical semiconductor light emitting devices 250 . In this case, the partition wall 290 may serve to separate individual unit pixels from each other, and may be integrally formed with the conductive adhesive layer 230 . For example, by inserting the semiconductor light emitting device 250 into the anisotropic conductive film, the base member of the anisotropic conductive film may form the partition wall.

In addition, when the base member of the anisotropic conductive film is black, the barrier rib 290 may have reflective properties and increase contrast even without a separate black insulator.

As another example, as the barrier rib 190 , a reflective barrier rib may be separately provided. The barrier rib 290 may include a black or white insulator depending on the purpose of the display device.

If the second electrode 240 is directly positioned on the conductive adhesive layer 230 between the semiconductor light emitting devices 250 , the barrier rib 290 is formed between the vertical semiconductor light emitting device 250 and the second electrode 240 . can be located between Accordingly, individual unit pixels can be configured with a small size using the semiconductor light emitting device 250 , and the distance between the semiconductor light emitting devices 250 is relatively large enough to connect the second electrode 240 to the semiconductor light emitting device 250 . ), and there is an effect of realizing a flexible display device having HD picture quality.

Also, as illustrated, a black matrix 291 may be disposed between each phosphor in order to improve a contrast ratio. That is, the black matrix 291 may improve contrast of light and dark.

As described above, the semiconductor light emitting device 250 is positioned on the conductive adhesive layer 230 and constitutes individual pixels in the display device through this. Since the semiconductor light emitting device 250 has excellent luminance, individual unit pixels can be configured even with a small size. Accordingly, a full-color display in which unit pixels of red (R), green (G), and blue (B) constitute one pixel can be implemented by the semiconductor light emitting device.

In the display using the semiconductor light emitting device of the present invention described above, the semiconductor light emitting device grown on the growth substrate is transferred to the wiring board using an anisotropic conductive film (ACF). However, this method has disadvantages in that it is difficult to secure manufacturing reliability and the manufacturing cost is high. In particular, in the case of digital signage, since a flexible property is not required, a different approach is required for a display using a semiconductor light emitting device.

Hereinafter, in the present invention, in order to overcome the technical difficulties described above and to realize a high-resolution display based on a micro light emitting diode, a new method, a pixel structure for a display based on a micro blue light emitting diode consisting of several to several tens of micrometers in size suggest

More specifically, by disposing the semiconductor light emitting device in the receiving hole of the planarization layer, the alignment of the semiconductor light emitting device is facilitated, making it possible to manufacture a display device with high precision, as well as providing a light-transmitting electrode pattern. A display device through which the wiring process is simplified is presented. Furthermore, a wiring structure with improved light extraction efficiency is implemented through the uneven portion.

Hereinafter, a display device according to another embodiment of the present invention in which alignment is easy, wiring process is simple, and optical performance is improved will be described in more detail with reference to the drawings.

10 is a partial perspective view for explaining another embodiment of the present invention, FIG. 11 is a circuit diagram for explaining the configuration of the pixel shown in FIG. 10 , and FIG. 12 is a cross-sectional view taken along line E-E of FIG. 10 .

10, 11 and 12 , the display device 1000 using an active matrix (AM) type semiconductor light emitting device is exemplified as the display device 1000 using the semiconductor light emitting device. However, the examples described below are also applicable to a passive matrix (PM) type semiconductor light emitting device.

According to the illustration, the display device 1000 using the semiconductor light emitting device of an active matrix is exemplified as the display device 1000 using the semiconductor light emitting device.

The display apparatus 1000 includes a substrate 1010 and a plurality of semiconductor light emitting devices 1050 .

The substrate 1010 is a thin film transistor array substrate and may be made of a glass or plastic material.

The substrate may include a display area and a non-display area. In this case, the display area is a portion other than an edge portion of the substrate 1010 , and may be defined as an area in which a pixel array displaying an image is disposed. The non-display area is provided on a portion of the substrate 1010 excluding the display area, and may be defined as an edge portion of the substrate 1010 surrounding the display area.

In addition, the substrate 1010 includes a plurality of gate lines GL, a plurality of data lines DL, a plurality of driving power lines PL, a plurality of common power lines CL, and a plurality of pixels SP. can do.

Each of the plurality of gate lines GL is provided on the substrate 1010 , extends in one direction of the substrate 1010 , and is spaced apart from each other at regular intervals along the other direction intersecting the one direction. The plurality of data lines DL are provided on the substrate 1010 to cross the plurality of gate lines GL, extend along the other direction, and are spaced apart from each other at regular intervals along the one direction.

The plurality of driving power lines PL may be disposed parallel to each of the plurality of data lines DL, and may be formed together with each of the plurality of data lines DL. Each of the plurality of driving power lines PL supplies pixel driving power provided from the outside to adjacent pixels SP.

The plurality of common power lines CL are provided on the substrate 1010 to be parallel to each of the plurality of gate lines GL, and may be formed together with each of the plurality of gate lines GL. Each of the plurality of common power lines CL supplies common power provided from the outside to adjacent pixels SP.

Each of the plurality of pixels SP is provided in a pixel area defined by a gate line GL and a data line DL. Each of the plurality of pixels SP is a region of a minimum unit in which actual light is emitted, and may be defined as a sub-pixel. The sub-pixel is a region of a minimum unit in which actual light is emitted and includes one semiconductor light emitting device. At least three adjacent pixels may constitute one unit pixel for color display. For example, one unit pixel includes adjacent red pixels, green pixels, and blue pixels, and may further include white pixels to improve luminance.

In addition, the semiconductor light emitting device may have the structure described above with reference to FIG. 4 , and a red semiconductor light emitting device, a green semiconductor light emitting device and a blue semiconductor light emitting device respectively disposed in a red pixel, a green pixel, and a blue pixel can be provided.

As another example, the plurality of semiconductor light emitting devices 1050 are mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to emit blue light. can be implemented. For this example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers such as n-Gan, p-Gan, AlGaN, InGan, and the like. As another example, the plurality of semiconductor light emitting devices may be implemented as light emitting devices emitting green light, or may include a blue semiconductor light emitting device and a green semiconductor light emitting device.

In addition, the semiconductor light emitting device may be a micro light emitting diode chip. Here, the micro light emitting diode chip may have a cross-sectional area smaller than the size of the light emitting area in the sub-pixel, and for example, may have a scale of 1 to 100 micrometers.

More specifically, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device have a first conductivity type semiconductor layer 1155 in which a first conductivity type electrode 1156 and a first conductivity type electrode 1156 are formed, respectively. ), the active layer 1154 formed on the first conductivity type semiconductor layer 1155 , the second conductivity type semiconductor layer 1153 and the second conductivity type semiconductor layer 1153 formed on the active layer 1154 , the first conductivity type semiconductor layer 1153 . It includes a second conductive type electrode 1152 spaced apart from the electrode 1156 in the horizontal direction. In this case, the second conductivity type electrode is disposed on one surface of the second conductivity type semiconductor layer 1153 , and an undoped semiconductor layer 1153a is formed on the other surface of the second conductivity type semiconductor layer 1153 . ) can be formed.

In addition, the first conductivity type electrode 1156 and the first conductivity type semiconductor layer 1155 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductivity type electrode 1152 and the second conductivity type semiconductor layer 1152 , respectively. The semiconductor layer 1153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not necessarily limited thereto, and examples in which the first conductivity type is n-type and the second conductivity type is p-type are also possible.

In addition, according to another embodiment of the present invention, the first conductive type and the second conductive type semiconductor layer may be formed by implanting impurities into the intrinsic or doped semiconductor substrate. Also, a region in which a p-n junction is formed by the impurity implantation may serve as the active layer. Listings of the first conductivity type semiconductor layer, the second conductivity type semiconductor layer, and the active layer, which will be described below, are merely exemplary, and the present invention is not limited thereto.

Referring to the drawings, a planarization layer 1060 having an accommodation hole 1061 in which the semiconductor light emitting device is accommodated may be formed on one surface of the substrate 1010 to cover the substrate.

For example, the planarization layer 1060 serves as a protective film for covering the substrate and for forming a plane by covering the wiring electrode, and is made of an insulating material. As an example, the planarization layer 1060 may include photoresist, an optical polymer material, or other industrial plastic material.

As illustrated, the accommodating hole 1061 may be provided in each of the plurality of pixels. The accommodating hole 1061 is provided in the light emitting area defined in the sub-pixel to accommodate the semiconductor light emitting device 1050 . Each of the plurality of semiconductor light emitting devices 1050 is connected to the pixel circuit PC of the corresponding pixel SP, and thus is proportional to the current flowing from the pixel circuit PC, that is, the driving thin film transistor T2 to the common power line CL. light with a brightness of

In this case, the planarization layer 1060 is formed to cover the driving thin film transistor T2 , and the accommodation hole 1061 is provided to be concave from the planarization layer 1060 . The accommodation hole 1061 is recessed toward the substrate from the top surface of the planarization layer 1060 . For example, the accommodating hole 1061 may have a cup shape having a larger size than that of the semiconductor light emitting device 1050 . In this case, the accommodating hole 1061 may be concavely formed in the planarization layer 1060 to have a depth greater than a thickness (or an overall height) of the semiconductor light emitting device 1050 .

As shown, the first conductive electrode of the plurality of semiconductor light emitting devices 1050 is connected to the source electrode of the driving thin film transistor T2 through the first contact hole CH1, and the second conductive electrode is the second contact It is connected to the common power line CL through the hole CH2.

As described above, in this example, the semiconductor light emitting device 1050 is accommodated in the receiving hole 1061 concavely provided in the light emitting region of the pixel, and the electrodes of the semiconductor light emitting device 1050 are connected to the pixel circuit through the contact holes CH1 and CH2. The connection process of the semiconductor light emitting device 1050 can be simplified by being connected to the driving thin film transistor of the .

As illustrated, the driving thin film transistor T2 includes a gate electrode GE, a semiconductor layer SCL, an ohmic contact layer OCL, a source electrode SE, and a drain electrode DE.

The gate electrode GE is formed on the substrate 2010 together with the gate line GL. The gate electrode GE is covered by the gate insulating layer 1112 .

The gate insulating layer 1112 may be formed of a single layer or a plurality of layers made of an inorganic material, and may be made of silicon oxide (SiOx), silicon nitride (SiNx), or the like.

The semiconductor layer SCL is provided in a preset pattern (or island) shape on the gate insulating layer 2112 to overlap the gate electrode GE. The semiconductor layer SCL may be made of a semiconductor material made of any one of amorphous silicon, polycrystalline silicon, oxide, and an organic material, but is not limited thereto.

The ohmic contact layer OCL is provided in the form of a preset pattern (or island) on the semiconductor layer SCL. Here, the ohmic contact layer PCL is for ohmic contact between the semiconductor layer SCL and the source/drain electrodes SE and DE, and may be omitted.

The source electrode SE is formed on the other side of the ohmic contact layer OCL to overlap one side of the semiconductor layer SCL. The source electrode SE is formed together with a data line (not shown), and is branched or protruded from an adjacent data line.

The drain electrode DE is formed on the other side of the ohmic contact layer OCL to be spaced apart from the source electrode SE while overlapping the other side of the semiconductor layer SCL. The drain electrode DE is formed together with the data line and the source electrode SE.

The interlayer insulating layer 1114 is formed on the upper surface of the substrate 1010 to cover the pixel circuit including the driving thin film transistor T2 . The interlayer insulating layer 1114 may be made of an inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx) or an organic material such as benzocyclobutene or photo acryl.

The planarization layer 1060 is formed on the upper surface of the substrate 1010 to cover the interlayer insulating layer 1114 . The planarization layer 1060 provides a flat surface on the interlayer insulating layer 1114 while protecting the pixel circuit including the driving thin film transistor T2 . The planarization layer 1060 according to an example may be made of an organic material such as benzocyclobutene or photo acryl.

Furthermore, the accommodation hole 1061 may be formed by removing all of the gate insulating layer 1112 , the interlayer insulating layer 1114 , and the planarization layer 1060 overlapping the light emitting region of the sub-pixel. The accommodating hole 1061 may have a cup shape having a larger size than that of the semiconductor light emitting device 1050 .

In this case, the planarization layer 1060 may further include a charging unit 1063 for charging the periphery of the semiconductor light emitting device 1050 disposed in the receiving hole 1061 of the substrate 1010 . For example, the planarization layer 1060 may include a multi-layered base portion 1062 stacked on a substrate, and a charging portion 1063 stacked on the base portion 1062 while filling a receiving hole. have. In this case, each of the base part 1062 and the charging part 1063 may be formed of a light-transmitting photosensitive material. In addition, the base part 1062 and the charging part 1063 may be made of the same material.

The charging unit 1063 is charged in a space around the receiving hole 1061 to which the semiconductor light emitting device 1050 is attached. The filling part 1063 is filled in the surrounding space of the receiving hole 1061 and then cured to flatten the upper surface of the surrounding space of the receiving hole 1061 while removing the air gap in the receiving hole 1061 . In addition, the charging unit 1062 may serve as a passivation function of the semiconductor light emitting device while supporting each of the pixel electrode pattern AE and the common electrode pattern CE, which will be described later.

In this case, the first conductive electrode 1156 and the second conductive electrode 1152 of the semiconductor light emitting device 1050 are spaced apart from the bottom of the accommodation hole 1061 . As shown, the first conductive electrode 1156 is connected to the source electrode SE of the driving thin film transistor T2 , and the second conductive electrode 1152 is connected to the common power line CL. In order to emit light from the semiconductor light emitting device upward, the first conductive electrode 1156 and the second conductive electrode 1152 may be respectively formed to be light-transmissive.

As illustrated, each of the plurality of sub-pixels has an electrode pattern connected to the first conductive electrode 1156 and the second conductive electrode 1152 , and extending to the driving thin film transistor through the planarization layer 1060 . includes In this case, the electrode pattern may be made of light-transmitting, and may include a concave-convex portion 1090 formed on the surface.

More specifically, the electrode pattern may include a pixel electrode pattern AE and a common electrode pattern CE.

The pixel electrode pattern AE electrically connects the source electrode SE of the driving thin film transistor T2 and the first conductive electrode 1156 of the semiconductor light emitting device 1050 . According to an example, the pixel electrode pattern AE extends to the driving thin film transistor T2 through the first contact hole CH1 provided in the planarization layer 1060 , and is connected to the source electrode SE while being connected to the semiconductor light emitting device 1050 . ) of the first conductive type electrode 1156 is connected.

The common electrode pattern CE electrically connects the common power line CL and the second conductive electrode 1152 of the semiconductor light emitting device 1050 . The common electrode pattern CE according to an example extends to the thin film transistor T2 through the second contact hole CH2 provided in the planarization layer 1060 and is connected to the common power line CL while being connected to the semiconductor light emitting device 1050 . is connected to the second conductive type electrode 1152 of

Each of the pixel electrode pattern AE and the common electrode pattern CE may be formed of a transparent conductive material. The transparent conductive material may be formed of a material such as indium tin oxide (ITO) or indium zinc oxide (IZO). As another example, the electrode pattern may be formed of TiO ₂ , AZO, ZnO, ITO, GZO, IZO, or an oxide layer composed of two or more layers. As another example, the electrode pattern may be formed of a Pedot:PSS-based conductive material or graphene.

As illustrated, the concavo-convex portions 1090 of the electrode pattern are respectively formed on the pixel electrode pattern AE and the common electrode pattern CE. However, the present invention is not necessarily limited thereto, and the concave-convex portion 1090 may be provided in any one of the pixel electrode pattern AE and the common electrode pattern CE.

The concave-convex portion 1090 may have a plurality of microgrooves by a texturing process using etching, and the microgrooves may be formed in a portion where the pixel electrode pattern AE covers the first conductive electrode 1156 . have. For the etching, both a dry process using ICP, RIE, or a wet process using a chemical etchant may be used. In this case, the planarization layer may be formed of a light-transmitting photosensitive material so that microgrooves can be formed by the etching.

For example, the concave-convex portion 1090 may include a first portion 1091 formed at a portion where the pixel electrode pattern AE and the first conductive electrode 1156 overlap. Light passing through the first conductive electrode 1156 and incident to the first portion 1091 may be more easily extracted from the surface of the pixel electrode pattern AE due to the uneven structure. In this example, the first portion 1091 is shown to cover the entire first conductive electrode 1156, but the present invention is not limited thereto. Accordingly, the first portion 1091 may be formed to cover only a portion of the first conductive type electrode 1156 .

Also, the concave-convex portion 1090 may include microgrooves formed in a portion where the common electrode pattern CE covers the second conductive electrode 1152 . For example, the concave-convex portion 1090 may include a second portion 1092 formed at a portion where the common electrode pattern CE and the second conductive electrode 1152 overlap. Even in this case, light passing through the second conductive electrode 1152 and incident to the second portion 1092 may be more easily extracted from the surface of the common electrode pattern CE due to the uneven structure.

Also, similarly to the first portion 1091 , in this example, the second portion 1092 covers the entire second conductive electrode 1152 , but the present invention is not limited thereto. Accordingly, the second portion 1092 may be formed to cover only a portion of the second conductive electrode 1152 .

In this case, the first conductive electrode 1156 and the second conductive electrode 1152 may be formed of a material having a refractive index greater than that of the electrode pattern. This is to facilitate the propagation of light from the first conductive electrode 1156 and the second conductive electrode 1152 to the electrode pattern. As a specific example, when the first conductive electrode 1156 and the second conductive electrode 1152 are formed of multi-layers, the upper layer is formed of a material having a higher refractive index than the electrode pattern. As another example, when the first conductivity type electrode 1156 and the second conductivity type electrode 1152 are a single layer, the first conductivity type electrode 1156 and the second conductivity type electrode 1152 itself It is formed of a material having a refractive index greater than that of the electrode pattern.

In this example, the substrate 1010 further includes an adhesive layer 1120 for fixing the semiconductor light emitting device 1050 to the receiving hole 1061 .

The adhesive layer 1120 is interposed between the semiconductor light emitting device 1050 and the bottom surface of the accommodation hole 1061 to attach the semiconductor light emitting device 1050 to the bottom surface of the accommodation hole 1061 . In this case, the bottom surface of the accommodation hole 1061 may be formed on the planarization layer or formed on the substrate. The adhesive layer 1120 may be formed of a light-transmitting material so that light reflected from the lower side of the semiconductor light emitting device may be transmitted toward the upper side.

Referring to the drawings, in the display device according to the present example, an encapsulation layer 1080 covering the upper surface of the substrate 1010 may be provided.

The encapsulation layer 1080 protects the pixel SP and the light emitting device 1050 provided on the substrate 1010 by being coated on the upper surface of the substrate 1010 to cover the pixel SP and the light emitting device 1050 . . The encapsulation layer 1080 may be formed of a heat and/or photo-curable resin and coated on the upper surface of the substrate 1010 in a liquid state, and then cured by a curing process using heat and/or light.

Meanwhile, the encapsulation layer 1080 may be replaced with a phosphor layer, and this structure will be described in more detail in a structure to be described later.

As illustrated, the black matrix BM and the color filter layer CF may be disposed on the encapsulation layer 1080 .

The black matrix BM defines an opening area overlapping the emission area of each pixel SP provided on the substrate 1010 . That is, the black matrix BM is provided in the remaining areas except for the aperture area overlapping the emission area of each pixel SP, thereby preventing color mixing between adjacent aperture areas.

A color filter layer CF may be disposed in the opening area. Also, the color filter layer CF may be disposed in the opening region to improve color purity of output light. As another example, the color filter layer CF may be replaced by a light extraction layer. The light extraction layer is made of a transparent material and serves to extract light emitted from the light emitting device 1050 to the outside. The opposite surface of the light extraction layer facing the light emitting device 1050 may have a lens shape for increasing the straightness of light emitted from the light emitting device 1050 .

According to the display device according to the present invention exemplified above, the luminance of the display is improved through the concavo-convex portion, and the power consumption is further improved.

The display device described above may be modified in various forms. Hereinafter, these modifications will be described in more detail with reference to the drawings.

13, 14 and 15 are cross-sectional views illustrating still other embodiments of the present invention.

In the example of FIG. 13 , the same reference numerals are assigned to the same components as those of the examples described above with reference to FIGS. 10 to 12 , and the description is replaced with the first description. Specifically, the configuration other than the concavo-convex part is the same as the configuration of the example described with reference to FIGS. 10 to 12 .

Referring to this drawing, in the concave-convex portion 2090 , in addition to the first portion 2091 and the second portion 2092 , the pixel electrode pattern AE and the common electrode pattern CE are formed in the planarization layer 2080 . ) may be formed on the covering portion 2093 .

For example, the concave-convex portion 2090 may be formed over the entire upper surface of the electrode pattern. Here, the upper surface may be a surface covered by the encapsulant 2080 in the electrode pattern.

In this case, the concave-convex portion may be formed so that the pitch at which the concavo-convex is formed is different from each other according to the position. For example, in the first portion 2091 and the second portion 2092 , the gap between the irregularities may be denser than that of the portion 2093 covering the planarization layer. Through this, the light extraction efficiency on the main path through which the light of the semiconductor light emitting device 2050 is emitted is improved, and a structure that is easy to manufacture is realized.

In the example of FIG. 14 , the same reference numerals are assigned to the same components as those of the examples described above with reference to FIGS. 10 to 12 , and the description is replaced with the first description. Specifically, except for the conductive electrodes and the concave-convex portion, the configuration is the same as the configuration of the example described with reference to FIGS. 10 to 12 .

Referring to this figure, the first conductive electrode and the second conductive electrode of the semiconductor light emitting device 3050 are each formed to be transparent.

More specifically, each of the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device includes a first conductive electrode 3156 and a second conductive semiconductor layer disposed on the first conductive semiconductor layer 3155 , respectively. A second conductive electrode 3152 disposed at 3153 may be provided.

As described above, the first conductivity type electrode 3156 and the first conductivity type semiconductor layer 3155 may be a p-type electrode and a p-type semiconductor layer, respectively, and the second conductivity type electrode 3152 and the first conductivity type semiconductor layer 3152 , respectively. The second conductive semiconductor layer 3153 may be an n-type electrode and an n-type semiconductor layer, respectively. However, the present invention is not necessarily limited thereto, and examples in which the first conductivity type is n-type and the second conductivity type is p-type are also possible.

In addition, according to another embodiment of the present invention, the first conductive type and the second conductive type semiconductor layer may be formed by implanting impurities into the intrinsic or doped semiconductor substrate. Also, a region in which a p-n junction is formed by the impurity implantation may serve as the active layer.

Referring to the drawings, a plurality of grooves corresponding to the recessed portion of the concavo-convex portion may be formed in at least one of the first conductive electrode and the second conductive electrode.

For example, a plurality of microgrooves are respectively formed on upper surfaces of the first conductive electrode 3156 and the second conductive electrode 3152 , and the microgrooves corresponding to the microgrooves are formed in the concave-convex portion 3090 . can be formed in For this configuration, the first conductive electrode 3156 and the second conductive electrode 3152 may be formed of an etchable material.

More specifically, the first conductive electrode 3156 is formed of a multi-layer. For this example, the first conductive electrode 3156 may include a first layer 3156a and a second layer 3156b. The first layer 3156a disposed on the upper side is formed of an etchable material. As shown, a plurality of protrusions are formed on one surface of the second layer 3156b, and the plurality of protrusions form the first layer 3156a. Each of the pixel electrode patterns AE extends from the plurality of protrusions to implement the uneven portions. This structure may also be applied to the second conductive type electrode 3152 . Accordingly, the second conductive electrode 3152 includes a first layer 3152a and a second layer 3152b, and the first layer 3152a disposed on the upper side is formed of an etchable material. A plurality of protrusions are formed on one surface of the second layer 3152b, and the plurality of protrusions form the first layer 3152a. Each of the common electrode patterns CE extends from the plurality of protrusions to implement the concave-convex portion 3090 .

In the example of FIG. 15 , the same reference numerals are assigned to the same components as those of the examples described above with reference to FIGS. 10 to 12 , and the description is replaced with the first description. In this example, the structures of the adhesive layer and the second conductivity type semiconductor layer are different from the above-described examples. In addition, in this example, a semiconductor light emitting device of a single color is provided, and a structure in which a color is realized using a phosphor instead of an encapsulant is exemplified. However, the adhesive layer, the second conductivity type semiconductor layer, the single color semiconductor light emitting device, and the phosphor described in this example may be applied to the examples described above with reference to FIGS. 10 to 14 , respectively.

In this example, the plurality of semiconductor light emitting devices 4050 are mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together and are implemented as high power light emitting devices that emit blue light. can be For this example, the plurality of semiconductor light emitting devices 1050 may be gallium nitride thin films formed in various layers such as n-Gan, p-Gan, AlGaN, InGan, and the like.

Meanwhile, the encapsulation layer of the above-described example is replaced with a phosphor layer. The phosphor layer 4080 may include a first phosphor part 4081 disposed at a position forming a red pixel and a second phosphor part 4082 disposed at a position forming a green pixel. In this case, each of the first phosphor part 4081 and the second phosphor part 4082 may include a red phosphor and a green phosphor capable of converting the blue light of the blue semiconductor light emitting device into red light or green light. have.

In order to partition the first phosphor part 4081 and the second phosphor part 4082 , a portion of the planarization layer 4060 may protrude to the black matrix BM. As an example, the charging part 4063 stacked on the base part 4062 of the planarization layer 4060 protrudes from between the semiconductor light emitting devices to the black matrix BM to form a space in which the phosphor is charged.

In this case, a light-transmitting material 4083 that does not convert a color may be disposed at a position constituting the blue pixel. The light-transmitting material is a material having high transmittance in the visible ray region, and for example, an epoxy-based photoresist (PR), polydimethylsiloxane (PDMS), or resin may be used.

As another example, a yellow phosphor capable of converting blue light from a blue semiconductor light emitting device into yellow light or white light may be provided in the first phosphor part 4081 and the second phosphor part 4082 . In this case, yellow light or white light may be converted into red, green, and blue while passing through the color filter.

Also, as illustrated, the black matrix BM and the color filter layer CF may be disposed on the phosphor layer.

The black matrix BM defines an opening area overlapping the emission area of each pixel SP provided on the substrate 4010 . A color filter layer CF may be disposed in the opening area. For example, when the light emitting device 4050 disposed in each pixel SP emits blue light and is converted into white light by the yellow phosphor layer, red or green may be implemented in the color filter layer CF. have. In this case, the color filter layer CF may have a structure in which portions for filtering a red wavelength, a green wavelength, and a blue wavelength are sequentially disposed in each sub-pixel. In addition, the color filter layer CF may be disposed in the opening area to filter out colors of the phosphor layer 4080 in order to improve color purity of output light.

In this example, the adhesive layer 4120 is interposed between the semiconductor light emitting device 4050 and the bottom surface of the accommodating hole 4061 to attach the semiconductor light emitting device 4050 to the bottom surface of the accommodating hole 4061 . The adhesive layer may be formed of a light-transmitting material so that light reflected from the lower side of the semiconductor light emitting device may be transmitted toward the upper side.

In this case, a plurality of grooves may be formed on a lower surface of the semiconductor light emitting device, and the adhesive layer 4120 may include a plurality of protrusions 4121 filled in the grooves. For example, a plurality of grooves may be formed on a lower surface of the undoped semiconductor layer 4153a of the semiconductor light emitting device. While the adhesive layer 4120 fills the plurality of grooves, a plurality of protrusions 4121 are formed on the adhesive layer 4120 . In this case, a reflective film (not shown) may be formed under the adhesive layer 4120 . For this example, a reflective film is formed on a portion of the substrate, and light reflected through the reflective film is transmitted through the adhesive layer. The light extraction efficiency of the light passing through the adhesive layer 4120 is increased by the plurality of protrusions 4121 of the adhesive layer.

As described above, in the present invention, a groove is formed on the lower surface of the semiconductor light emitting device, and as the adhesive layer fills the groove, the adhesive strength of the adhesive layer is improved, and the light reflected from the adhesive layer to the semiconductor light emitting device is easier on the adhesive layer. to be extracted.

The display device using the semiconductor light emitting device described above is not limited to the configuration and method of the above-described embodiments, but all or part of each embodiment may be selectively combined so that various modifications may be made. may be

Claims (12)

a substrate including a driving thin film transistor;
a semiconductor light emitting device having a first conductive electrode and a second conductive electrode;
a planarization layer formed to cover the driving thin film transistor and having an accommodation hole in which the semiconductor light emitting device is accommodated; and
and an electrode pattern connected to the first conductive electrode and the second conductive electrode and extending to the driving thin film transistor through the planarization layer;
The electrode pattern is made of a light-transmitting display device, characterized in that it has a concave-convex portion formed on at least a portion of the surface. According to claim 1,
The electrode pattern is
a pixel electrode pattern connected to the first conductive electrode and extending to the driving thin film transistor through a first hole of the planarization layer;
and a common electrode pattern connected to the second conductive electrode and extending to the driving thin film transistor through a second hole of the planarization layer;
The display device, characterized in that the uneven portion is formed on the pixel electrode pattern and the common electrode pattern, respectively. 3. The method of claim 2,
The display device according to claim 1, wherein the concave-convex portion is formed in a portion where the pixel electrode pattern and the first conductive electrode overlap and a portion where the common electrode pattern and the second conductive electrode overlap. delete 3. The method of claim 2,
The display device according to claim 1, wherein the concave-convex portion is formed on a portion where the pixel electrode pattern and the common electrode pattern cover the planarization layer. According to claim 1,
The display device, characterized in that each of the first conductive electrode and the second conductive electrode are light-transmissive. 7. The method of claim 6,
A plurality of grooves corresponding to the recessed portions of the concave-convex portion are formed in at least one of the first conductive electrode and the second conductive electrode. According to claim 1,
The semiconductor light emitting device is a display device, characterized in that attached to the bottom of the receiving hole by an adhesive layer. 9. The method of claim 8,
A plurality of grooves are formed on a lower surface of the semiconductor light emitting device, and the adhesive layer includes a plurality of protrusions filled in the grooves. 9. The method of claim 8,
A display device, characterized in that a reflective film is formed under the adhesive layer. According to claim 1,
The display device, characterized in that the first conductive electrode and the second conductive electrode is formed of a material having a refractive index greater than that of the electrode pattern. delete

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