KR102387253B1 - Light Emitting Device - Google Patents

Abstract

The present invention relates to a light emitting structure including a substrate, a first conductivity type semiconductor layer disposed on the substrate, an active layer and a second conductivity type semiconductor layer, a light transmitting conductive layer disposed on the light emitting structure, and an image of the light transmitting conductive layer It is disposed in, relates to a light emitting device comprising a light extraction pattern having at least one or more holes.

Description

Light Emitting Device

The embodiment relates to a light emitting device.

Light emitting devices such as light emitting diodes or laser diodes using group III-V or group II-VI compound semiconductor materials of semiconductors have developed various colors such as red, green, blue and ultraviolet light through thin film growth technology and development of device materials. can be implemented. In addition, the light emitting device can realize efficient white light by combining colors using fluorescent materials, and has advantages of low power consumption, semi-permanent lifespan, fast response speed, safety, and environmental friendliness compared to conventional light sources such as fluorescent lamps and incandescent lamps. have

Therefore, the transmission module of optical communication means, the light emitting diode backlight that replaces the Cold Cathode Fluorescence Lamp (CCFL) constituting the backlight of the liquid crystal display (LCD), the fluorescent lamp or the incandescent bulb can be replaced. The application of light emitting devices is expanding to white light emitting diode lighting devices, automobile headlights, signals, and the like.

1 shows a cross-sectional view of a conventional light emitting device.

The light emitting device of FIG. 1 includes a sapphire substrate 20 , a light emitting structure 30 , a first electrode 42 and a second electrode 44 , and a conductive layer 50 . Here, the light emitting structure 30 includes a first conductivity type semiconductor layer 32 , an active layer 34 , and a second conductivity type semiconductor layer 36 .

In the conventional light emitting device, a pattern is formed on the interface between the first conductivity type semiconductor layer 32 and the sapphire substrate 20 or on the inside of the second conductivity type semiconductor layer 36 or on the upper layer including the conductive layer 50 as shown. By forming a structure to improve the extraction efficiency of the light emitting device could be included.

However, when the pattern is formed inside the second conductivity-type semiconductor layer 36 or on the upper layer including the conductive layer 50 , the resistance decreases due to the volume reduction of the second conductivity-type semiconductor layer 36 and the conductive layer 50 . increases, and as a result, there is a problem in that an operating voltage of the light emitting device increases and an electrical deterioration phenomenon such as an increase in leakage current occurs.

The embodiment provides a light emitting device having high light extraction efficiency.

In order to solve the above problems, the present embodiment provides a light emitting structure including a substrate, a first conductivity type semiconductor layer disposed on the substrate, an active layer and a second conductivity type semiconductor layer, and a light-transmitting conductive material disposed on the light emitting structure It is disposed on the layer and the light-transmitting conductive layer, and may provide a light emitting device including a light extraction pattern having at least one hole or more.

In addition, a thickness of the light-transmitting conductive layer may be 20 nanometers or less to provide a light emitting device.

In addition, the light-transmitting conductive layer may provide a light emitting device including graphene.

In addition, a light emitting device having a refractive index of 1.8 to 2 of the light-transmitting conductive layer may be provided.

In addition, the substrate may provide a light emitting device including a light-transmitting material.

In addition, the light emitting device may provide a light emitting device further comprising a first electrode disposed on the first conductivity-type semiconductor layer exposed by mesa etching and a second electrode disposed on the second conductivity-type semiconductor layer. .

In addition, the cross-section of the hole of the light extraction pattern may provide a light emitting device having a circular or polygonal shape.

In addition, the holes of the plurality of light extraction patterns may provide a light emitting device disposed at the same interval.

In addition, the holes of the plurality of light extraction patterns may provide a light emitting device disposed at first intervals along the first direction.

In addition, the plurality of holes of the light extraction pattern may provide a light emitting device disposed at second intervals along a second direction orthogonal to the first direction.

In addition, the first interval and the second interval may provide the same light emitting device.

The light emitting device of the embodiment may have improved light extraction efficiency.

1 shows a cross-section of a conventional light emitting device.
2 is a perspective view of a light emitting device according to an embodiment.
FIG. 3 is a cross-sectional view of the light emitting device of FIG. 2 .
4 is a cross-sectional view of a light emitting device according to another embodiment.
5 is a graph showing the light extraction efficiency of the light emitting device according to the embodiment.
6 is a cross-sectional view illustrating a light emitting device package according to an embodiment.
7 illustrates a display device according to an embodiment including a light emitting device package.
8 illustrates a head lamp according to an embodiment including a light emitting device package.
9 illustrates a lighting device according to an embodiment including a light emitting device or a light emitting device package.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings to help the understanding of the present invention by giving examples and to explain the present invention in detail. However, embodiments according to the present invention may be modified in various other forms, and the scope of the present invention should not be construed as being limited to the embodiments described below. The embodiments of the present invention are provided in order to more completely explain the present invention to those of ordinary skill in the art.

In the description of the embodiment according to the present invention, in the case where it is described as being formed on "up (above)" or "below (on or under)" of each element, upper (upper) or lower (lower) (on or under) includes both elements in which two elements are in direct contact with each other or one or more other elements are disposed between the two elements indirectly. In addition, when expressed as “up (up)” or “down (on or under)”, the meaning of not only the upward direction but also the downward direction based on one element may be included.

Also, as used hereinafter, relational terms such as "first" and "second," "upper" and "lower", etc., shall not necessarily require or imply any physical or logical relationship or order between such entities or elements. In this case, it may be used only to distinguish one entity or element from another entity or element.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not fully reflect the actual size.

FIG. 2 shows a cross-section of the light emitting device according to the embodiment, and FIG. 3 shows a cross section of the light emitting device of FIG. 2 .

Hereinafter, an embodiment will be described with reference to FIGS. 2 and 3 . The light emitting device 100 includes a reflector 110 , a substrate 130 , a buffer layer 140 , a light emitting structure 150 , a first electrode 162 , a second electrode 164 , a light extraction pattern 170 , and a conductive material. layer 180 may be included.

The substrate 130 is disposed on the reflector 110 . The substrate 130 may be made of a light-transmitting material. For example, the substrate 130 may be formed of at least one of sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is not limited thereto.

In addition, the substrate 130 may have mechanical strength enough to be well separated into separate chips through a scribing process and a breaking process without causing warpage to the entire nitride semiconductor.

The embodiment is not limited to the type of the above-described substrate 130 .

A buffer layer 140 (or a transition layer) is disposed on the upper surface 134 of the substrate 130 . For example, when the substrate 130 is a silicon substrate, it may have a (111) crystal plane as a main surface. In the case of a silicon substrate, it is easy to have a large diameter and has excellent thermal conductivity. Problems may arise. To prevent this, the buffer layer 140 may be disposed between the substrate 130 and the light emitting structure 150 . The buffer layer 140 may include, for example, at least one of Al, In, N, and Ga, but is not limited thereto. Also, the buffer layer 140 may have a single-layer or multi-layer structure. The buffer layer 140 may be omitted depending on the type of the substrate 130 and the light emitting structure 150 .

The light emitting structure 150 is disposed on the buffer layer 140 . If the buffer layer 140 is omitted, the light emitting structure 150 is disposed on the upper surface 134 of the substrate 130 .

The light emitting structure 150 includes a first conductivity type semiconductor layer 152 , an active layer 154 , and a second conductivity type semiconductor layer 156 sequentially disposed on the upper surface 134 of the substrate.

The first conductivity type semiconductor layer 152 may be implemented as a compound semiconductor such as group III-V or group II-VI doped with a first conductivity type dopant, and may be doped with a first conductivity type dopant. When the first conductivity-type semiconductor layer 152 is an n-type semiconductor layer, the first conductivity-type dopant is an n-type dopant and may include Si, Ge, Sn, Se, and Te, but is not limited thereto.

For example, the first conductivity type semiconductor layer 152 may be Al _x In _y Ga _(1-xy) N (0≤≤x≤≤1, 0≤≤y≤≤1, 0≤≤x+y≤≤ It may include a semiconductor material having the composition formula of 1). The first conductivity type semiconductor layer 152 may include at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, GaP, AlGaP, InGaP, AlInGaP, or InP.

In the active layer 154, electrons (or holes) injected through the first conductivity type semiconductor layer 152 and holes (or electrons) injected through the second conductivity type semiconductor layer 156 meet each other, and the active layer ( 154) is a layer that emits light with energy determined by the intrinsic energy band of the material.

The active layer 154 may include at least one of a single well structure, a multi-well structure, a single quantum well structure, a multi-quantum well (MQW) structure, a quantum-wire structure, or a quantum dot structure. can be formed into one.

The well layer/barrier layer of the active layer 154 may include at least one pair of InGaN/GaN, InGaN/InGaN, GaN/AlGaN, InAlGaN/GaN, GaAs (InGaAs)/AlGaAs, or GaP (InGaP)/AlGaP. It may be formed in a structure, but is not limited thereto. The well layer may be formed of a material having a bandgap energy lower than the bandgap energy of the barrier layer.

A conductive cladding layer (not shown) may be formed on and/or under the active layer 154 . The conductive cladding layer may be formed of a semiconductor having a bandgap energy higher than that of the barrier layer of the active layer 154 . For example, the conductive clad layer may include GaN, AlGaN, InAlGaN, or a superlattice structure. In addition, the conductivity-type cladding layer may be doped with n-type or p-type.

The second conductivity-type semiconductor layer 156 may be formed of a semiconductor compound, and may be implemented with a compound semiconductor such as group III-V or group II-VI. For example, the second conductivity type semiconductor layer 156 may include In _x Al _y Ga ₁ -x- _y N ( _{0≤≤x≤≤1} , 0≤≤y≤≤1, 0≤≤x+y≤≤1) It may include a semiconductor material having a composition formula of The second conductivity type semiconductor layer 156 may be doped with a second conductivity type dopant. When the second conductivity-type semiconductor layer 156 is a p-type semiconductor layer, the second conductivity-type dopant is a p-type dopant and may include Mg, Zn, Ca, Sr, Ba, or the like.

The first conductivity-type semiconductor layer 152 may be implemented as an n-type semiconductor layer, and the second conductivity-type semiconductor layer 156 may be implemented as a p-type semiconductor layer. Alternatively, the first conductivity-type semiconductor layer 152 may be implemented as a p-type semiconductor layer, and the second conductivity-type semiconductor layer 156 may be implemented as an n-type semiconductor layer.

The light emitting structure 150 may be implemented as any one of an N-P junction structure, a P-N junction structure, an N-P-N junction structure, and a P-N-P junction structure.

The first electrode 162 is disposed on the first conductivity-type semiconductor layer 152 exposed by mesa etching. The second electrode 164 is disposed on the second conductivity type semiconductor layer 156 . For example, each of the first and second electrodes 162 and 164 may include silver (Ag), nickel (Ni), aluminum (Al), rhodium (Rh), palladium (Pd), iridium (Ir), and ruthenium (Ru). ), at least one of magnesium (Mg), zinc (Zn), platinum (Pt), gold (Au), titanium (Ti), chromium (Cr), copper (Cu) or hafnium (Hf), and their optional It can be made into a single-layer or multi-layer structure by combination.

In addition, although not illustrated, first and second electrodes are disposed between the first electrode 162 and the first conductivity type semiconductor layer 152 and between the second electrode 164 and the second conductivity type semiconductor layer 156 . Ohmic contact layers may be respectively disposed.

The first ohmic contact layer serves to improve the ohmic characteristics of the first conductivity-type semiconductor layer 152 . For example, the first ohmic contact layer may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or IGTO ( indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO (gallium zinc oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO , IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, It may be formed including at least one of Zn, Pt, Au, and Hf, but is not limited to these materials.

The second ohmic contact layer serves to improve the ohmic characteristics of the second conductivity type semiconductor layer 156 . When the second conductivity type semiconductor layer 156 is a p-type semiconductor layer, the contact resistance is high due to the low impurity doping concentration of the second conductivity type semiconductor layer 156 , and thus the ohmic characteristics may be poor. may play a role in improving these ohmic characteristics.

Meanwhile, light emitted from the active layer 154 of the light emitting structure 150 may be absorbed by the substrate 130 without being emitted. As such, in order to improve light extraction efficiency by emitting light absorbed by the substrate 130 , the reflection unit 110 may be disposed under the substrate 130 .

According to an embodiment, the reflector 110 may include a metal material, for example, at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, or Hf. Or it may be formed by a metal material composed of an optional combination thereof.

A conductive layer 180 may be disposed on the second conductivity type semiconductor layer 156 of the light emitting device 120 . In addition, a second electrode 164 may be formed on the second conductivity-type semiconductor layer 156 or the conductive layer 180 .

The conductive layer 180 may improve electrical characteristics of the second conductivity-type semiconductor layer 156 and may improve electrical contact with a second electrode (not shown). The conductive layer 180 may be formed to have a plurality of layers or patterns, and the conductive layer 180 may be formed as a transparent electrode layer having transparency.

The conductive layer 180 is, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IZTO (Indium Zinc Tin Oxide), IAZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO ( Indium Gallium Tin Oxide), AZO (Aluminum Zinc Oxide), ATO (Antimony Tin Oxide), GZO (Gallium Zinc Oxide), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO (Zinc Oxide), IrOx (Iridium Oxide), RuOx (Ruthenium Oxide), NiO (Nickel Oxide), RuOx / ITO, Ni / IrOx / Au (Gold), may be formed including at least one of graphene (graphene) However, it is not limited to these materials.

A light extraction pattern 170 may be formed on the conductive layer 180 . The light extraction pattern 170 may be formed by a wet etching method or a dry etching method, and the light extraction efficiency of the light emitting structure may be improved.

The cross-section of the light extraction pattern 170 may be provided in a circular or polygonal shape, and may be provided to be disposed at the same interval.

The light extraction pattern 170 may include a flat portion 173 forming a flat surface, and a plurality of holes 171 disposed to pass through the flat portion 173 .

The plurality of holes 171 may be disposed at a first interval d1 in a first direction, and may be disposed at a second interval d2 in a second direction orthogonal to the first direction.

The first interval d1 and the second interval d2 may be the same.

However, the present invention is not limited thereto, and the first interval d1 and the second interval d2 may be different from each other according to the needs of the user.

4 is a cross-sectional view of a light emitting device according to another embodiment of the present invention.

Referring to FIG. 4 , since the structure of another embodiment of the present invention is the same as that of the light emitting device of the above-described embodiment, overlapping portions will be omitted.

The difference between the embodiment shown in FIG. 3 and the embodiment shown in FIG. 4 is that the thickness of the conductive layer 180 is provided differently at t1 and t2.

When the thickness of the conductive layer 180 becomes thinner below a specific thickness t2, the total reflection effect due to the light tunneling phenomenon is abruptly reduced, and the light is strongly caused by the light extraction pattern 170 located on the upper portion of the conductive layer 180. diffracted

Accordingly, the light extraction efficiency of the light emitting device is increased.

5 is a graph showing the light extraction efficiency of the light emitting device according to the embodiment, and when the thickness of the conductive layer 180 in FIG. 5 is 20 nm or less, the light extraction efficiency of the light emitting device may be improved.

5 shows the extraction efficiency according to the refractive index and thickness of the conductive layer 180. When the light extraction pattern 170 is formed on the conductive layer 180, the extraction efficiency increases as the thickness of the conductive layer 180 increases. It can be seen that the efficiency decreases.

In addition, extraction efficiency when the refractive index of the conductive layer 180 is 2 is shown by a solid line, and extraction efficiency when the refractive index of the conductive layer 180 is 1.8 is shown by a dotted line.

It can be seen that the higher the refractive index of the conductive layer 180, the higher the extraction efficiency.

It can be seen that the extraction efficiency sharply decreases based on the case where the thickness of the conductive layer 180 is 20 nm.

This is because, when the thickness of the conductive layer 180 is formed to be 20 nm or less, the total reflection effect by the conductive layer 180 is almost negligible when the refractive index of the conductive layer 180 is 1.8 and 2, respectively. Extraction efficiency similar to that in the absence of this can be obtained.

6 is a cross-sectional view illustrating a light emitting device package 200 according to an embodiment.

Referring to FIG. 6 , the light emitting device package 200 according to the embodiment includes a package body part 205 , first and second lead frames 213 and 214 installed on the package body part 205 , and the package body part. The light emitting device 100 disposed on the 205 and electrically connected to the first and second lead frames 213 and 214, the molding member 240 surrounding the light emitting device 100, and the first and second wires (232, 234).

The package body 205 may include silicon, synthetic resin, or metal, and an inclined surface may be formed around the light emitting device 100 .

The first and second lead frames 213 and 214 are electrically isolated from each other, and serve to provide power to the light emitting device 100 . In addition, the first and second lead frames 213 and 214 may serve to increase light efficiency by reflecting light generated from the light emitting device 100 , and heat generated from the light emitting device 100 to the outside. It can also serve as an exhaust.

The light emitting device 100 may be disposed on the second lead frame 214 as shown in the drawings, but is not limited thereto. For example, unlike illustrated in FIG. 10 , the light emitting device 100 may be disposed on the first lead frame 213 or disposed on the package body 205 .

The light emitting device 100 may be electrically connected to the first and second lead frames 213 and 214 by any one of a wire method, a flip chip method, or a die bonding method. The first electrode 162 of the light emitting device 100 illustrated in FIG. 10 is electrically connected to the first lead frame 213 and the first wire 232 through the second lead frame 214 and the second wire ( 234), but the embodiment is not limited thereto.

The molding member 240 may surround and protect the light emitting device 100 . Also, the molding member 240 may include a phosphor to change the wavelength of light emitted from the light emitting device 100 .

A plurality of light emitting device packages according to the embodiment may be arrayed on a substrate, and optical members such as a light guide plate, a prism sheet, a diffusion sheet, and a fluorescent sheet may be disposed on a path of light emitted from the light emitting device package. Such a light emitting device package, substrate, and optical member may function as a backlight unit or function as a lighting unit, for example, the lighting unit may include automotive lighting, outdoor lighting, a backlight unit of a display panel, indicating devices such as indicator lights or traffic lights, lamps , may include street lights.

7 illustrates a display device including the light emitting device package of the present invention.

Referring to FIG. 7 , the display device 800 includes a bottom cover 810 , a reflecting plate 820 disposed on the bottom cover 810 , light emitting modules 830 and 835 emitting light, and a reflecting plate 820 . ) and a light guide plate 840 for guiding the light emitted from the light emitting modules 830 and 835 to the front of the display device, and prism sheets 850 and 860 disposed in front of the light guide plate 840. An optical sheet, a display panel 870 disposed in front of the optical sheet, an image signal output circuit 872 connected to the display panel 870 and supplying an image signal to the display panel 870 , and the display panel 870 . It may include a color filter 880 disposed in front of the . Here, the bottom cover 810 , the reflection plate 820 , the light emitting modules 830 and 835 , the light guide plate 840 , and the optical sheet may form a backlight unit.

The light emitting module may include light emitting device packages 835 mounted on a substrate 830 . Here, as the substrate 830 , a printed circuit board (PCB) or the like may be used. The light emitting device package 835 may be the embodiment 200 shown in FIG. 10 .

The bottom cover 810 may accommodate components in the display device 800 . In addition, the reflecting plate 820 may be provided as a separate component as shown in this figure, and it is also possible to provide a form coated with a high reflectivity material on the rear surface of the light guide plate 840 or the front surface of the bottom cover 810 . .

Here, the reflector 820 may use a material with high reflectivity and an ultra-thin shape, and may use PolyEthylene Terephtalate (PET).

In addition, the light guide plate 840 may be formed of polymethyl methacrylate (PolyMethylMethAcrylate; PMMA), polycarbonate (PC), or polyethylene (PolyEthylene; PE).

In addition, the first prism sheet 850 may be formed of a light-transmitting and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be repeatedly provided in a stripe type with ridges and valleys as shown.

In addition, the direction of the peaks and valleys of one surface of the support film in the second prism sheet 860 may be perpendicular to the directions of the peaks and valleys of one surface of the support film in the first prism sheet 850 . This is to evenly distribute the light transmitted from the light emitting module and the reflective sheet to the front surface of the display panel 870 .

Also, although not shown, a diffusion sheet may be disposed between the light guide plate 840 and the first prism sheet 850 . The diffusion sheet may be made of a polyester and polycarbonate-based material, and a light incident angle may be maximized through refraction and scattering of light incident from the backlight unit. In addition, the diffusion sheet includes a support layer including a light diffusing agent, a first layer and a second layer formed on the light exit surface (in the direction of the first prism sheet) and the light incident surface (in the direction of the reflection sheet), and do not include the light diffusion agent. may include

In an embodiment, the diffusion sheet, the first prism sheet 850, and the second prism sheet 860 form an optical sheet, and the optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. It may be made of a combination of , or a combination of one prism sheet and a micro lens array.

A liquid crystal display may be disposed on the display panel 870 , and other types of display devices requiring a light source may be provided in addition to the liquid crystal display panel.

8 illustrates a head lamp including a light emitting device package of the present invention.

Referring to FIG. 8 , the head lamp 900 includes a light emitting module 901 , a reflector 902 , a shade 903 , and a lens 904 .

The light emitting module 901 may include a plurality of light emitting device packages (not shown) disposed on a substrate (not shown). In this case, the light emitting device package may be the embodiment 200 shown in FIG. 10 .

The reflector 902 reflects the light 911 irradiated from the light emitting module 901 in a predetermined direction, for example, forward 912 .

The shade 903 is disposed between the reflector 902 and the lens 904, and blocks or reflects a portion of light reflected by the reflector 902 and directed to the lens 904 to form a light distribution pattern desired by the designer. As such, one side portion 903 - 1 and the other side portion 903 - 2 of the shade 903 may have different heights from each other.

The light irradiated from the light emitting module 901 may be reflected by the reflector 902 and the shade 903 and then pass through the lens 904 to be directed toward the front of the vehicle body. The lens 904 may refract light reflected by the reflector 902 forward.

9 illustrates a lighting device 1000 including a light emitting device or a light emitting device package according to the present invention.

Referring to FIG. 9 , the lighting device 1000 may include a cover 1100 , a light source module 1200 , a heat sink 1400 , a power supply unit 1600 , an inner case 1700 , and a socket 1800 . there is. In addition, the lighting apparatus 1000 according to the embodiment may further include any one or more of the member 1300 and the holder 1500 .

The cover 1100 may have a shape of a bulb or a hemisphere, and may have a hollow inside and an open shape. The cover 1100 may be optically coupled to the light source module 1200 . For example, the cover 1100 may diffuse, scatter, or excite light provided from the light source module 1200 . The cover 1100 may be a kind of optical member. The cover 1100 may be coupled to the heat sink 1400 . The cover 1100 may have a coupling portion coupled to the heat sink 1400 .

A milky white paint may be coated on the inner surface of the cover 1100 . The milky white paint may include a diffusing material for diffusing light. The surface roughness of the inner surface of the cover 1100 may be greater than the surface roughness of the outer surface of the cover 1100 . This is so that light from the light source module 1200 is sufficiently scattered and diffused to be emitted to the outside.

The material of the cover 1100 may be glass, plastic, polypropylene (PP), polyethylene (PE), polycarbonate (PC), or the like. Here, polycarbonate is excellent in light resistance, heat resistance, and strength. The cover 1100 may be transparent so that the light source module 1200 can be seen from the outside, but is not limited thereto and may be opaque. The cover 1100 may be formed through blow molding.

The light source module 1200 may be disposed on one surface of the heat sink 1400 , and heat generated from the light source module 1200 may be conducted to the heat sink 1400 . The light source module 1200 may include a light source unit 1210 , a connection plate 1230 , and a connector 1250 .

The member 1300 may be disposed on the upper surface of the heat sink 1400 , and has a guide groove 1310 into which the plurality of light sources 1210 and the connector 1250 are inserted. The guide groove 1310 may correspond to or be aligned with the board and the connector 1250 of the light source unit 1210 .

The surface of the member 1300 may be coated or coated with a light reflective material.

For example, the surface of the member 1300 may be coated or coated with a white paint. The member 1300 may reflect the light reflected on the inner surface of the cover 1100 and return toward the light source module 1200 in the direction of the cover 1100 again. Accordingly, the light efficiency of the lighting device according to the embodiment may be improved.

The member 1300 may be made of, for example, an insulating material. The connection plate 1230 of the light source module 1200 may include an electrically conductive material. Accordingly, electrical contact may be made between the heat sink 1400 and the connection plate 1230 . The member 1300 may be made of an insulating material to block an electrical short between the connection plate 1230 and the heat sink 1400 . The heat sink 1400 may receive heat from the light source module 1200 and heat from the power supply unit 1600 to radiate heat.

The holder 1500 blocks the receiving groove 1719 of the insulating part 1710 of the inner case 1700 . Accordingly, the power supply unit 1600 accommodated in the insulating unit 1710 of the inner case 1700 may be sealed. The holder 1500 may have a guide protrusion 1510 , and the guide protrusion 1510 may have a hole through which the protrusion 1610 of the power supply unit 1600 passes.

The power supply unit 1600 processes or converts an electrical signal received from the outside and provides it to the light source module 1200 . The power supply unit 1600 may be accommodated in the receiving groove 1719 of the inner case 1700 , and may be sealed inside the inner case 1700 by the holder 1500 . The power supply unit 1600 may include a protrusion part 1610 , a guide part 1630 , a base 1650 , and an extension part 1670 .

The guide unit 1630 may have a shape protruding outward from one side of the base 1650 . The guide unit 1630 may be inserted into the holder 1500 . A plurality of components may be disposed on one surface of the base 1650 . The plurality of components include, for example, a DC converter for converting AC power provided from an external power source into DC power, a driving chip for controlling the driving of the light source module 1200 , and ElectroStatic (ESD) for protecting the light source module 1200 . discharge) protection device, but is not limited thereto.

The extension 1670 may have a shape protruding outward from the other side of the base 1650 . The extension portion 1670 may be inserted into the connection portion 1750 of the inner case 1700 and may receive an electrical signal from the outside. For example, the extension portion 1670 may have the same width or smaller width than the connection portion 1750 of the inner case 1700 . Each end of the "+ wire" and the "- wire" may be electrically connected to the extension 1670 , and the other end of the "+ wire" and the "- wire" may be electrically connected to the socket 1800 . .

The inner case 1700 may include a molding unit together with the power supply unit 1600 therein. The molding part is a part where the molding liquid is hardened, and allows the power supply unit 1600 to be fixed inside the inner case 1700 .

In the above, the embodiment has been mainly described, but this is only an example and does not limit the present invention, and those of ordinary skill in the art to which the present invention pertains are not exemplified above in a range that does not depart from the essential characteristics of the present embodiment. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be implemented by modification. And differences related to such modifications and applications should be construed as being included in the scope of the present invention defined in the appended claims.

100: light emitting element 110: reflector
130: substrate 140: buffer layer
150: light emitting structure 152: first conductivity type semiconductor layer
154: active layer 156: second conductivity type semiconductor layer
162: first electrode 164: second electrode
200: light emitting device package 205: package body portion
213, 214: lead frame 232, 234: wire
240: molding member 800: display device
810: bottom cover 820: reflector
830, 835, 901: light emitting module 840: light guide plate
850, 860: prism sheet 870: display panel
872: image signal output circuit 880: color filter
900: head lamp 902: reflector
903: shade 904: lens
1000: lighting device 1100: cover
1200: light source module 1400: heat sink
1600: power supply unit 1700: inner case
1800: socket

Claims (11)

Board;
a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer disposed on the substrate;
a light-transmitting conductive layer disposed on the light emitting structure; and
and a light extraction pattern disposed on the light-transmitting conductive layer,
The light extraction pattern is,
a flat portion disposed on the light-transmitting conductive layer; and
A light emitting device including a plurality of holes passing through the flat portion. delete The light emitting device of claim 1 , wherein the light-transmitting conductive layer includes graphene. According to claim 1,
The thickness of the light-transmitting conductive layer is 20 nanometers or less,
A light emitting device having a refractive index of 1.8 to 2 of the light-transmitting conductive layer. delete According to claim 1, wherein the light emitting device
a first electrode disposed on the first conductivity-type semiconductor layer exposed by mesa etching; and
The light emitting device further comprising a second electrode disposed on the second conductivity-type semiconductor layer. delete delete The method of claim 1,
The plurality of holes of the light extraction pattern are disposed at first intervals along a first direction, and disposed at second intervals along a second direction orthogonal to the first direction,
The first interval and the second interval are the same light emitting device. delete delete

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