KR102569727B1 - Display device - Google Patents

Abstract

This specification discloses a display device. The display device includes one or more pixels and associated pixel circuits; at least two types of power wiring connected to the pixel circuit; A dummy wire disposed between two different types of power wires among the power wires is included.

Description

Display device {DISPLAY DEVICE}

This specification relates to a display device.

BACKGROUND OF THE INVENTION [0002] Video display devices, which implement various information on a screen, are a core technology of the information and communication era, and are developing toward thinner, lighter, portable and high performance. Accordingly, an organic light emitting display device or the like that displays an image by controlling the amount of light emitted from an organic light emitting element is in the limelight.

An organic light emitting device is a self light emitting device using a thin light emitting layer between electrodes, and has the advantage of being thin. A general organic light emitting display device has a structure in which a pixel driving circuit and an organic light emitting element are formed on a substrate, and an image is displayed while light emitted from the organic light emitting element passes through the substrate or the barrier layer.

In various display devices, including the organic light emitting display device, performance such as long-term reliability may be deteriorated when moisture permeation occurs, so moisture permeation and/or propagation is blocked in various ways. In particular, various structures are being researched/applied to prevent moisture penetrating along the wiring of the outer part.

An object of the present specification is to propose a structure for preventing permeation of moisture through a wiring unit of a display device. The tasks of this specification are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

A display device is provided according to one embodiment of the present specification. The display device includes one or more pixels and associated pixel circuits; at least two types of power wiring connected to the pixel circuit; Among the power wires, a dummy wire disposed between two different types of power wires may be included.

The dummy wiring may be provided to suppress electrocution due to an electric field generated between two power supply wirings having the largest potential difference. For example, the dummy wire may be disposed between two power wires having the largest potential difference among the power wires.

The power wiring includes a first power wiring, a second power wiring, and a third power wiring, and the first power wiring, the second power wiring, and the third power wiring are a high level power supply (VDD) wiring, an initialization power wiring, and It may be a low-level power supply (VSS) wire. In this case, the dummy wiring may be disposed between the first power wiring and the second power wiring.

The dummy wiring may be disposed in a region where an interval between the first power wiring and the second power wiring is equal to or less than a predetermined distance.

The dummy wiring may be made of the same material as a source electrode or a drain electrode of a thin film transistor (TFT) included in the pixel circuit. In this case, the dummy wiring may have a multilayer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in order.

The dummy wiring may be made of the same material as an anode electrode or a cathode electrode of an organic light emitting diode included in the pixel circuit.

The dummy wiring may be in a floating state because no power is supplied thereto.

Details of other embodiments are included in the detailed description and drawings.

Embodiments of the present specification may provide a display device in which reliability deterioration due to corrosion or corrosion of wiring is improved. In addition, the embodiments of the present specification may provide a structure for preventing moisture permeation through a wiring unit outside the display device. Effects according to the embodiments of the present specification are not limited to those exemplified above, and more diverse effects are included in the present specification.

1 shows an exemplary display device that may be included in an electronic device.
2A and 2B are cross-sectional views schematically illustrating a display area and a non-display area of a display device according to an exemplary embodiment of the present specification.
3 is an exemplary view illustrating a wiring arrangement of a display device.
4 is a diagram illustrating a display device according to an embodiment of the present specification.

Advantages and features of this specification, and methods of achieving them, will become clear with reference to embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only these embodiments make the disclosure of the present invention complete, and common knowledge in the art to which the present invention belongs. It is provided to fully inform the holder of the scope of the invention, and the present invention is only defined by the scope of the claims.

The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining the embodiments of this specification are illustrative, so this specification is not limited to the matters shown. Like reference numbers designate like elements throughout the specification. In addition, in describing the present invention, if it is determined that a detailed description of related known technologies may unnecessarily obscure the subject matter of the present invention, the detailed description will be omitted. When 'includes', 'has', 'consists of', etc. mentioned in this specification is used, other parts may be added unless 'only' is used. In the case where a component is expressed in the singular, the case including the plural is included unless otherwise explicitly stated. In interpreting the components, even if there is no separate explicit description, it is interpreted as including the error range.

In the case of a description of a positional relationship, for example, 'on top of', 'on top of', 'at the bottom of', 'next to', etc. Or, unless 'directly' is used, one or more other parts may be located between the two parts. When an element or layer is referred to as “on” another element or layer, it includes all cases where another element or layer is directly on top of another element or another layer or other element intervenes therebetween. When an element is described as being “connected,” “coupled to,” or “connected” to another element, that element is or may be directly connected to that other element, but intervenes between each element. It will be understood that may be "interposed", or each component may be "connected", "coupled" or "connected" through other components.

Although first, second, etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, the first component mentioned below may also be the second component within the technical spirit of the present invention.

The size and thickness of each component shown in the drawings are shown for convenience of description, and the present invention is not necessarily limited to the size and thickness of the illustrated components. Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 shows an exemplary display device that may be included in an electronic device.

Referring to FIG. 1 , the display device 100 includes at least one active area, and an array of pixels is formed in the active area. One or more inactive areas may be disposed around the display area. That is, the non-display area may be adjacent to one or more side surfaces of the display area. In FIG. 1 , the non-display area surrounds a rectangular display area. However, the shape of the display area and the shape/arrangement of the non-display area adjacent to the display area are not limited to the example shown in FIG. 1 . The display area and the non-display area may have shapes suitable for the design of an electronic device in which the display device 100 is mounted. Exemplary shapes of the display area are pentagonal, hexagonal, circular, elliptical, and the like.

Each pixel in the display area may be associated with a pixel circuit. The pixel circuit may include one or more switching transistors and one or more driving transistors on a backplane. Each pixel circuit may be electrically connected to a gate line and a data line in order to communicate with one or more driving circuits such as a gate driver and a data driver located in the non-display area.

As shown in FIG. 1 , the driving circuit may be implemented as a thin film transistor (TFT) in the non-display area. Such a driving circuit may be referred to as a gate-in-panel (GIP). In addition, some components, such as data driver ICs, are mounted on a separate printed circuit board, and circuit films such as FPCB (flexible printed circuit board), COF (chip-on-film), TCP (tape-carrier-package), etc. can be combined with connection interfaces (pads/bumps, pins, etc.) disposed in the non-display area. The non-display area may be bent together with the connection interface, so that the printed circuit (COF, PCB, etc.) may be located behind the display device 100 .

The display device 100 may include various additional elements for generating various signals or driving pixels within a display area. Additional elements for driving the pixel may include an inverter circuit, a multiplexer, an electrostatic discharge circuit, and the like. The display device 100 may also include additional elements related to functions other than pixel driving. For example, the display device 100 may include additional elements providing a touch sensing function, a user authentication function (eg, fingerprint recognition), a multi-level pressure sensing function, and a tactile feedback function. The aforementioned additional elements may be located in the non-display area and/or an external circuit connected to the connection interface.

One or more edges of the display device 100 may be bent away from a central portion 101 . Since one or more portions of the display device 100 may be bent, the display device 100 may be substantially defined as a flat portion and a bent portion. That is, a portion of the display device 100 (eg, a wiring portion between the pad PAD and the display area) is bent at a predetermined angle, and this portion may be referred to as a bent portion. The bent portion includes a bent section that is actually bent with a predetermined bending radius. Although not always the case, the central portion of the display device 100 may be substantially flat, and the corner portions may be curved portions.

When the non-display area is bent, the non-display area is not visible or only minimally visible on the front side of the display device. A portion of the non-display area visible from the front of the display device may be covered by a bezel. The bezel may be formed as a stand-alone structure, or as a housing or other suitable element. A part of the non-display area visible from the front of the display device may be hidden under an opaque mask layer such as black ink (eg, a polymer filled with carbon black). Such an opaque mask layer may be provided on various layers (touch sensor layer, polarization layer, cover layer, etc.) included in the display device 100 .

The bend portion 102 is bendable outward from the central portion with a bend angle θ about the bend axis and a bend radius R. The size of each of the bent portions need not be the same. Further, the bending angle θ around the bending axis and the radius of curvature R from the bending axis may be different for each bending portion.

2A and 2B are cross-sectional views schematically illustrating a display area and a non-display area of a display device according to an exemplary embodiment of the present specification.

The illustrated display area and non-display area may be applied to at least part of the display area A/A and the non-display area A/A-2 described in FIG. 1 . Hereinafter, the display device will be described using an organic light emitting display as an example.

In the case of an organic light emitting display device, thin film transistors 112 , 114 , 116 , and 118 , organic light emitting devices 122 , 124 , and 126 and various functional layers are positioned on the base layer 111 in the display area. . Meanwhile, various driving circuits, electrodes, wires, functional structures, and the like may be located on the base layer 111 in the non-display area.

The base layer 111 supports various components of the organic light emitting display device 100 . The base layer 111 may be formed of a transparent insulating material such as glass or plastic. A substrate (array substrate) is also referred to as a concept including elements and functional layers formed thereon, for example, a switching TFT, a driving TFT, an organic light emitting element, a protective film, and the like.

A buffer layer may be positioned on the base layer 111 . The buffer layer is a functional layer for protecting the thin film transistor (TFT) from impurities such as alkali ions flowing out from the base layer 111 or lower layers. The buffer layer may be formed of silicon oxide (SiOx), silicon nitride (SiNx), or a multilayer thereof.

A thin film transistor is placed on the base layer 111 or the buffer layer. The thin film transistor may have a semiconductor layer 112, a gate insulating layer 113, a gate electrode 114, an interlayer insulating layer 115, and source and drain electrodes 116 and 118 sequentially disposed. The semiconductor layer 112 is positioned on the base layer 111 or the buffer layer. The semiconductor layer 112 may be made of polysilicon (p-Si), and in this case, a predetermined region may be doped with impurities. In addition, the semiconductor layer 112 may be made of amorphous silicon (a-Si) or various organic semiconductor materials such as pentacene. Furthermore, the semiconductor layer 112 may be made of oxide. The gate insulating layer 113 may be formed of an insulating inorganic material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material or the like. The gate electrode 114 may be formed of various conductive materials such as magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), molybdenum (Mo), tungsten (W), gold (Au), or alloys thereof. etc. can be formed.

The interlayer insulating layer 115 may be formed of an insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), or may be formed of an insulating organic material or the like. Contact holes exposing source and drain regions may be formed by selectively removing the interlayer insulating layer 115 and the gate insulating layer 113 .

The source and drain electrodes 116 and 118 are formed on the interlayer insulating film 115 in a single-layer or multi-layered shape of an electrode material.

A planarization layer 117 may be positioned on the thin film transistor. The planarization layer 117 protects the thin film transistor and planarizes an upper portion thereof. The planarization layer 117 may be formed in various forms. It may be formed of an organic insulating film such as BCB (Benzocyclobutene) or acrylic, or an inorganic insulating film such as silicon nitride (SiNx) or silicon oxide (SiOx), Various modifications are possible, such as being formed as a single layer or being composed of double or multiple layers.

The organic light emitting device may have a form in which a first electrode 122 , an organic light emitting layer 124 , and a second electrode 126 are sequentially disposed. That is, the organic light emitting device includes a first electrode 122 formed on the planarization layer 117, an organic light emitting layer 124 positioned on the first electrode 122, and a second electrode (positioned on the organic light emitting layer 124). 126).

The first electrode 122 is electrically connected to the drain electrode 118 of the driving thin film transistor through a contact hole. When the organic light emitting display device 100 is a top emission type, the first electrode 122 may be made of an opaque conductive material having a high reflectance. For example, the first electrode 122 may be formed of silver (Ag), aluminum (Al), gold (Au), molybdenum (Mo), tungsten (W), chromium (Cr), alloys thereof, or the like. .

The bank 120 is formed in an area other than the light emitting area. Accordingly, the bank 120 has a bank hole exposing the first electrode 122 corresponding to the light emitting region. The bank 120 may be made of an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx) or an organic insulating material such as BCB, acrylic resin, or imide resin.

An organic light emitting layer 124 is located on the first electrode 122 exposed by the bank 120 . The organic light emitting layer 124 may include a light emitting layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, and the like. The organic light emitting layer may be composed of a single light emitting layer structure emitting one light, or may be composed of a structure composed of a plurality of light emitting layers and emitting white light.

A second electrode 126 is positioned on the organic light emitting layer 124 . When the organic light emitting display device 100 is a top emission type, the second electrode 126 is a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO). By being formed of a material, light generated in the organic light emitting layer 124 is emitted to the upper portion of the second electrode 126 .

A protective layer 128 and an encapsulation layer 130 are positioned on the second electrode 126 . The protective layer 128 and the encapsulation layer 130 block oxygen and moisture penetration from the outside in order to prevent oxidation of the light emitting material and the electrode material. When the organic light emitting device is exposed to moisture or oxygen, a pixel shrinkage phenomenon in which a light emitting area is reduced may occur or a dark spot may occur within the light emitting area. The passivation layer and/or the encapsulation layer may be composed of an inorganic film made of glass, metal, aluminum oxide (AlOx), or silicon (Si)-based material, or an organic film and an inorganic film may be alternately formed. It may also be a layered structure. The inorganic layer serves to block penetration of moisture or oxygen, and the organic layer serves to planarize the surface of the inorganic layer. The reason why the encapsulation layer is formed as a multi-layered thin film layer is to make it difficult for moisture/oxygen to penetrate into the organic light emitting device by making the movement path of moisture or oxygen longer and more complicated than that of a single layer.

The organic light emitting display device 100 may further include a touch layer, a polarization layer 160 , a cover layer 170 and the like on the encapsulation layer 130 . A touch panel/touch sensing electrode may be provided to sense a user's touch input on an upper surface (eg, an upper surface of an encapsulation layer) of the organic light emitting device. If necessary, an independent layer including touch sensing electrodes and/or other components related to touch input sensing may be provided inside the display device 100 . The touch sensing electrode (eg, touch driving/sensing electrode) may be a hybrid material made of a mixture of carbon-based materials such as indium tin oxide, graphene, carbon nanotubes, conductive polymers, and various conductive/non-conductive materials. It may be formed of a transparent conductive material. Also, a metal mesh, such as an aluminum mesh or a silver mesh, may be used as the touch sensing electrode.

The display device 100 may include a polarization layer 160 to control display characteristics (eg, external light reflection, color accuracy, luminance, etc.). The cover layer 170 may be used to protect the display device 100 and may be, for example, a cover glass.

To increase strength and/or rigidity of a specific portion of the display device 100 , one or more support layers 180 may be provided under the base layer 111 . The support layer 180 is attached to a surface (second surface) opposite to a surface (first surface) of the base layer 111 on which the organic light emitting device is located. The support layer 180 may include polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyethylene ether phthalate, polycarbonate, polyarylate, poly It can be made into a thin plastic film composed of a combination of polyether imide, polyether sulfonate, polyimide, polyacrylate, and other suitable polymers. Other suitable materials that may be used for forming the supporting layer 180 may include thin glass, metal foil shielded with a dielectric, a multi-layer polymer, a polymer film including a polymer material combined with nanoparticles or microparticles, and the like. there is.

For easier bending and improved reliability of the display device 100 , configurations of components in the curved portion 102 may be different from those in the flat central portion 101 . Some components present in the central portion 101 are not disposed in the bent portion 102 or are provided with different thicknesses. For example, the support layer 180, the polarization layer 160, the touch sensor layer, the color filter layer, and/or other elements that hinder the bending of the display device 100 may not be present in the curved portion 102. there is. In addition, organic light emitting elements may be provided in a shape different from that of the flat portion 101 in consideration of viewing angle characteristics of the curved portion 102 .

Although no pixel circuit is disposed in the non-display area I/A, the base layer 111 and the organic/inorganic functional layers 113, 115, 117, 128, and 130 may exist. Also, materials used in the configuration of the display area A/A may be disposed in the non-display area I/A for other purposes. For example, as shown in FIG. 2B, the metal 114' used as the gate electrode of the display area TFT or the metal 118' used as the source/drain electrode is used in the non-display area (I/A) for wiring and electrodes. ) can be placed. Furthermore, the metal 122' used as one electrode (eg, anode) of the organic light emitting diode may be disposed in the non-display area I/A for wiring and electrodes.

3 is an exemplary view illustrating a wiring arrangement of a display device.

FIG. 3 is an enlarged view of part B of FIG. 1 . For convenience of explanation, only the pad region P, the wiring layers 118' and 114', and the planarization layer 117 of the display device are simply illustrated in FIG. 3, and the planarization layer 117 and the wiring layer 118' are simply shown. , 114′) the encapsulation layer on was omitted. The encapsulation layer 130 may cover the entire area except for the pad area P or only a partial area.

The wiring layer 118' may be formed of the same metal on the same layer as the source or drain electrode of the TFT in the display area (first metal layer). Although FIG. 3 shows a planarization layer 117 over the wiring layer 118', this is just one implementation, and other insulating layers may be overlying the wiring layer 118'. The wiring layer 118' and the planarization layer 117 have a positional relationship shown in Fig. 2B.

In the wiring part design of FIG. 3 , a flattening layer 117 that eliminates steps depending on the presence or absence of wiring is applied to some areas. That is, in some regions, the planarization layer 117 covers the top of the wiring layer 118', so that the level difference due to the presence or absence of the wiring layer disappears. Therefore, cracks caused by steps can be prevented when the top of such a structure is covered with an inorganic layer such as an encapsulation layer. On the other hand, there is no planarization layer 117 in a specific area, which is to prevent moisture transfer by breaking the planarization layer 117 because moisture may propagate along the organic layer constituting the planarization layer 117 . At this time, in a specific section without a planarization layer, the second metal layer 114' forms a jumping structure with the first metal layer 118' and functions as one wire.

The second metal layer 114' is provided on a different layer from the first metal layer 118'. In addition, the second metal layer 114' is connected to the first metal layer 118' through a contact hole or a direct connection method. Hence, the drive voltage. An electrical signal or the like is applied to the connection interface (pad, etc.) of the pad region P, is transmitted along the first metal layer 118', and is transmitted along the second metal layer 114' in a specific section.

However, several vulnerabilities have been found in the wiring unit structure described above. One of them is an electrolytic corrosion phenomenon found between adjacent power lines to which a voltage with a large potential difference is applied. For example, apply a negative voltage (e.g., about -4.5V) to the low-level drive power supply (V _SS )/init power supply (V _INI ) wires, and a positive voltage (e.g., about -4.5V) to the high-level drive power supply (V _DD ). When there is a display device to which +4.5V) is applied, electric field may be induced by an electric field due to a large potential difference in the region Y where the V _DD to V _INI wires are arranged close to each other. In addition, when such transfer occurs, moisture permeation occurs through the point. The inventors of the present invention have recognized this problem and have invented a structure for preventing electrical corrosion of wiring metal and consequent moisture permeation.

4 is a diagram illustrating a display device according to an embodiment of the present specification.

FIG. 4 is an enlarged view of part B of FIG. 1 , showing an embodiment in which a wiring reinforcing structure is applied. For convenience of explanation, in FIG. 4, only the pad region P, the wirings 114' and 118', the organic layer 117, and the dummy wiring 140 of the display device are simply shown, and the upper functional layer (eg, : encapsulation layer) was omitted.

Although FIG. 4 shows the organic material layer 117 over the wiring 118' and the dummy wiring 140, this is only an implementation example, and other insulating layers may be used. The wiring 118' and the organic material layer 117 have a positional relationship shown in Fig. 2B. Here, the wiring is a path through which power or various signals are transmitted to pixels in the display area, and is made of a conductive material such as metal. Hereinafter, an embodiment in which the wirings 118 and 114'' are power wirings will be described. The spirit of the present invention is not limited thereto. When the wirings 118' and 114' are power wirings, the wirings shown in FIG. 4A may be, from the left, low-level power supply (V _SS ), initialization power supply (V _INI or V _REF ), and high-level power supply (V _DD ) wiring. . Meanwhile, the organic material layer 117 may be a planarization layer.

The display device of FIG. 4 includes a pixel circuit associated with one or more pixels; at least two types of power wirings 118'-1, 118'-2, and 118'-3 connected to the pixel circuit; A dummy wire 140 disposed between two different types of power wires among the power wires may be included. The pixel and pixel circuit may be disposed in an active area, and the power wires 118'-1, 118'-2, and 118'-3 and the dummy wire 140 may be disposed in an inactive area. can The non-display area may be disposed around the display area. That is, the non-display area may be adjacent to one or more side surfaces of the display area.

The non-display area may include a first portion covered with the organic material layer 117 and a second portion not covered with the organic material layer 117 . In the first portion, the organic layer 117 may cover the entire top surfaces of the wires 118'-1, 118'-2, and 118'-3 or only edge portions of the wires.

The display device may further include an encapsulation layer covering upper portions of the display area and the non-display area to prevent permeation of moisture, oxygen, and the like. Accordingly, an encapsulation layer may be positioned above the power wires 118'-1, 118'-2, and 118'-3 and the planarization layer 117. In one embodiment, the encapsulation layer 130 may not completely cover the outer edge of the display device. In this case, the encapsulation layer 130 may cover only the lower side of the specific line E. At this time, the upper side of the specific line E (a portion not covered by the encapsulation layer) may be a curved portion.

The wires 118'-1, 118'-2, and 118'-3 extend from the connection interface (pad, pin, etc.) of the pad area P toward the display area. At this time, the power wires 118'-1, 118'-2, and 118'-3 may be metal formed on a single layer, or metals 118' and 114' on two layers are connected as shown in FIG. It may be. In this case, one of the metals 114' may be the same material (gate metal) as the gate electrode of the thin film transistor (TFT) included in the pixel circuit. Also, the other one 118' of the metals may be the same material (source/drain metal) as the source electrode or the drain electrode of the thin film transistor (TFT) included in the pixel circuit. In this case, the other metal 118' may be a metal layer (so-called Ti/Al/Ti) having a multilayer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are sequentially stacked.

The power wiring may include a first power wiring 118'-1, a second power wiring 118'-2, and a third power wiring 118'-3. At this time, the first power wiring 118'-1, the second power wiring 118'-2, and the third power wiring 118'-3 are respectively high level power supply (V _DD ) wiring and initialization power supply (V _INI) Alternatively, it may be a V _REF ) wiring and a low-level power supply (V _SS ) wiring. The dummy wire 140 may be disposed between the first power wire 118'-1 and the second power wire 118'-2.

The dummy wiring 140 is provided to prevent the power wiring 118' from being damaged (electrolytic, etching, etc.). Specifically, the dummy wiring 140 is provided to suppress electric shock due to an electric field generated between power wiring having a large potential difference. For example, the dummy wiring 140 is connected to two power wirings (eg, 118'-1 and 118'-3) having the largest potential difference among the power wirings 118'-1, 118'-2, and 118'-3. 2) can be placed in between. The dummy wire 140 disposed in this way blocks an electric field between the two power supply wires 118'-1 and 118'-2, and thus, electric charge due to the electric field can be suppressed.

The dummy wiring 140 may be disposed only in a region where the distance between two wirings having a large potential difference (eg, the first power wiring 118'-1 and the second power wiring 118'-2) is less than a predetermined distance. there is. Since the strength of the electric field is inversely proportional to the distance, even if the potential difference is large, if the two wirings are sufficiently far apart, the possibility of electrocution due to the electric field is low. Accordingly, the disposition area of the dummy wiring 140 may be determined by considering the potential difference and the distance between the wirings. The dummy wiring 140 is shown in FIG. 4 as being connected to the metal 114' of another layer and extending downward, but unlike this, the dummy wiring 140 is not connected to the metal 114' of another layer. Maybe not. (That is, there may be no metal layer connected to the dummy wiring.) Furthermore, the dummy wiring 140 may be formed in the upper region of FIG. 4 (above the boundary where the organic layer 117 is disconnected), or in FIG. It may be disposed only in a part of the lower region (below the boundary where the organic material layer 117 is disconnected).

The dummy wiring 140 may be disposed on the same layer as the power wirings 118'-1, 118'-2, and 118'-3 or on a different layer. When the power wirings 118'-1, 118'-2, and 118'-3 are source/drain metal, as an example, the dummy wiring 140 includes a thin film transistor (TFT) included in the pixel circuit. ) may be made of the same material as the source electrode or the drain electrode. In this case, the dummy wiring 140 may have a multilayer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in order. Meanwhile, as another example, the dummy wiring 140 may be made of the same material as an anode electrode or a cathode electrode included in the pixel circuit. In this case, the dummy wiring 140 may be formed in the process of patterning the anode electrode or the cathode electrode.

The dummy wire 140 may be a wire in a floating state because no power is supplied thereto. As another example, the dummy wiring 140 may be a wiring to which a specific voltage (eg, 0 V) is supplied.

Although the embodiments of the present specification have been described in detail with reference to the accompanying drawings, the present specification is not necessarily limited to these embodiments, and may be variously modified and implemented without departing from the technical spirit. Therefore, the embodiments disclosed herein are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments. Each feature of the various embodiments of the present invention can be partially or entirely combined or combined with each other, can be technically interlocked and driven in various ways by those skilled in the art, and each embodiment can be carried out independently of each other or together in a related relationship. may be carried out. The protection scope of the present invention should be construed according to the claims below, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.

Claims (10)

a display area in which one or more pixels and associated pixel circuits are disposed and a non-display area disposed around the display area;
at least two types of power wiring connected to the pixel circuit;
a dummy wire disposed between two different types of power wires among the power wires;
a planarization layer covering upper portions of the at least two types of power wiring and the dummy wiring; and
an encapsulation layer positioned on the planarization layer and covering upper portions of the display area and the non-display area;
the planarization layer is disposed in a plurality of regions spaced apart from each other along a direction in which the at least two types of power wiring and the dummy wiring are extended;
The non-display area includes a bent portion bent at a predetermined angle;
The encapsulation layer does not cover the curved portion of the display device. According to claim 1,
The dummy wire is disposed between two power wires having the largest potential difference among the power wires. According to claim 1,
The dummy wiring is provided to suppress electrocution due to an electric field generated between two power supply wirings having the largest potential difference. According to claim 1,
The power wiring includes a first power wiring, a second power wiring, and a third power wiring;
The first power wire, the second power wire, and the third power wire are a high level power supply (VDD) wire, an initialization power wire, and a low level power supply (VSS) wire, respectively. According to claim 4,
The dummy wiring is disposed between the first power wiring and the second power wiring. According to claim 5,
The dummy wiring is disposed in a region where a distance between the first power wiring and the second power wiring is equal to or less than a predetermined distance. According to claim 1,
The dummy wiring is made of the same material as a source electrode or a drain electrode of a thin film transistor (TFT) included in the pixel circuit. According to claim 7,
The dummy wiring has a multilayer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in order. According to claim 1,
The dummy wiring is made of the same material as an anode electrode or a cathode electrode of an organic light emitting diode included in the pixel circuit. According to claim 1,
The dummy wire is in a floating state because no power is supplied to the display device.

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