KR102748784B1 - Method for forming patterns and lithography system - Google Patents

Abstract

Embodiments disclosed herein relate to methods for fabricating patterns and lithography systems. The lithography system includes various components for generating masks, patterning substrates, performing measurements on the patterned substrates, and comparing the measurements to the mask. The method for forming patterns includes comparing the patterned substrate to the mask, and determining a new mask that incorporates corrections in patterning from a previous mask. The method can be repeated multiple times to sequentially improve the quality of the mask used for lithography in the lithography system. The integrated lithography system reduces cost and usage time for the user.

Description

Method for forming patterns and lithography system

[0001] Embodiments of the present invention relate to devices and methods, and more particularly, to methods and lithography systems for forming one or more patterns.

[0002] Photolithography is widely used in the manufacture of semiconductor devices and display devices, such as liquid crystal displays (LCDs). Large area substrates are usually utilized in the manufacture of LCDs. LCDs, or flat panels, are commonly used in active matrix displays, such as computers, touch panel devices, personal digital assistants (PDAs), cell phones, television monitors, etc. Typically, the flat panels may include a layer of liquid crystal material forming pixels sandwiched between two plates. When power from a power supply is applied across the liquid crystal material, the amount of light passing through the liquid crystal material can be controlled at pixel locations, thereby allowing images to be generated.

[0003] Typically, lithographic techniques are used to create electrical features that are incorporated as part of a layer of liquid crystal material forming pixels. Maskless lithographic techniques involve creating a virtual mask, from which selected portions of the films are removed to create patterns in the films on the substrates. Maskless lithographic techniques include electron beam lithography, optical lithography, direct laser writing, focused ion beam lithography, probe-tip contact lithography, and the like.

[0004] One problem in the art is that maskless lithography techniques can introduce imperfections in the pattern being created. For example, the critical dimensions (CDs) of the pattern, such as thicknesses and distances between pattern elements, may be too small or too large, which may impair the functionality of the ultimate device. The imperfections or errors may be caused by tool and process drifts, which result in low yields of the patterned substrates. The errors in the pattern may be global (i.e., spread over the entire substrate or a large portion of the substrate), or they may be local (i.e., some pattern elements are affected while others are not). Additionally, fixing these errors entails significant costs and time spent on metrology and re-verifying other features of the patterned substrates, requiring multiple tedious steps and unrelated processes to improve the virtual masks for accurate patterns.

[0005] Therefore, there is a need for lithography systems that reduce the time and cost of manufacturing patterns.

[0006] Embodiments disclosed herein relate to methods and lithography systems for manufacturing patterns. An integrated lithography system reduces the time to generate accurate virtual masks, which also lowers the cost of ownership for the owner.

[0007] In one embodiment, a method of forming patterns is provided, the method comprising: forming a first mask; forming a first pattern on a first substrate using the first mask; determining one or more measurement values; determining one or more corrections in the first pattern, wherein the one or more corrections in the first pattern are determined by one or more target values and one or more measurement values; determining a correction table using the one or more corrections; forming a second mask, wherein the second mask is determined by the correction table; and forming a second pattern on a second substrate using the second mask.

[0008] In another embodiment, a lithography system is provided that includes a plurality of lithography system tools. The plurality of lithography system tools include a virtual mask device configured to form one or more masks, a lithography tool configured to form one or more patterns on one or more substrates using the one or more masks, a metrology tool configured to determine one or more measurement values from the one or more substrates, a controller configured to determine one or more corrections from the one or more target values and the one or more measurement values and to control operations of the lithography system, a simulator configured to determine a correction table, and one or more communication links configured to transmit information between elements of the lithography system.

[0009] So that the above-mentioned features of the present disclosure may be understood in detail, a more detailed description of the embodiments briefly summarized above may be had by reference to the embodiments, some of which are illustrated in the appended drawings. It should be noted, however, that the appended drawings illustrate only typical embodiments of the present disclosure and are therefore not to be considered limiting the scope of the present disclosure, for the present disclosure may admit to other equally effective embodiments.
[0010] FIG. 1 illustrates a plan view of a lithography system according to one embodiment.
[0011] FIG. 2 is a flowchart of method operations for forming one or more patterns, according to one embodiment.
[0012] FIG. 3a illustrates a plan view of a portion of a first substrate overlaid with a first mask, according to one embodiment.
[0013] FIG. 3b illustrates a side view of a portion of a first substrate overlaid with a first mask, according to one embodiment.
[0014] FIG. 3c illustrates a plan view of a portion of a first substrate after a first pattern is formed, according to one embodiment.
[0015] FIG. 3d illustrates a side view of a portion of a first substrate after a first pattern is formed, according to one embodiment.
[0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the drawings. It is contemplated that elements and features of one embodiment may be beneficially incorporated into other embodiments without further recitation.

[0017] Embodiments disclosed herein relate to methods for fabricating patterns and lithography systems. The lithography system includes various components for generating masks, such as virtual masks or digital masks, patterning substrates, performing measurements on the patterned substrates, and comparing the measurements to the mask. The method for forming patterns includes comparing the patterned substrate to the mask, and determining a new mask that incorporates corrections in the patterning from a previous mask. The method can be repeated multiple times to sequentially improve the quality of a mask used for lithography in the lithography system. Embodiments disclosed herein can be useful for (but are not limited to) an integrated lithography system for improving masks and patterns.

[0018] As used herein, the term "about" can refer to a variation of +/-10% from the nominal value. It should be understood that such variation can be included in any value provided herein.

[0019] FIG. 1 illustrates a plan view of a lithography system (100) according to one embodiment. The lithography system (100) is configured to generate and analyze patterns on a substrate generated by various lithography system tools of the lithography system. As illustrated, the lithography system (100) includes a plurality of lithography system tools including a virtual mask device (101), a metrology tool (102), a lithography tool (103), a simulator (104), a controller (108), a plurality of communication links (105), and a transport system (106). Other lithography system tools may be included without any loss of generality. The plurality of lithography system tools are interconnected by the communication links (105), and all elements of the lithography system (100) are connected to the controller (108) by the communication links (105). Alternatively or additionally, each of the plurality of lithography system tools may communicate indirectly by first communicating with the controller (108) and then the controller communicating with the respective lithography system tool. Each of the plurality of lithography system tools may be located in the same area or production facility, or each of the plurality of lithography system tools may be located in different areas, such that the lithography system (100) operates as a distributed system. A distributed system reduces the space required to perform lithography as desired. Additionally, an integrated lithography system (100) reduces the cost of ownership and time for the user because all of the plurality of lithography system tools operate together.

[0020] Each of the plurality of lithography system tools is additionally indexed with method (200) operations, as further described in the description of FIG. 2 below. Each of the virtual mask device (101), the metrology tool (102), the lithography tool (103), the simulator (104), and the controller (108) includes an on-board processor and memory, wherein the memory is configured to store instructions corresponding to any part of the method (200) described below.

[0021] The communication links (105) can be any of those found in the art, such as wired connections, wireless connections, satellite connections, etc. The communication links (105) allow different lithography system tools to be located in different areas, so that the entire lithography system does not have to be in the same location. In one embodiment, the communication links (105) include transmitting and receiving a universal metrology file (UMF) or any other file used to store data. The communication links (105) can include temporarily or permanently storing the files or data in the cloud prior to transmitting or copying the files or data to the lithography system tool.

[0022] The lithography tool (103) and the metrology tool (102) are connected by a transport system (106), which is configured to transfer a patterned substrate from the lithography tool (103) to the metrology tool (102). In embodiments where the lithography tool (103) and the metrology tool (102) are co-located, the transport system (106) may include robots or other equipment designed to transport the patterned wafers. The transport may occur in a high vacuum or at atmospheric pressure. The transport system (106) may include any number of transport chambers or vacuum chambers, depending on the requirements for maintaining the pattern unaffected and undamaged by the environment.

[0023] FIG. 2 is a flow diagram of method (200) operations for forming one or more patterns, according to one embodiment. While the method (200) operations are described in conjunction with FIGS. 1, 2, and 3A-3D, those skilled in the art will appreciate that any system configured to perform the method operations in any order is within the scope of the embodiments described herein.

[0024] The method (200) begins with operation (202) where a first mask (301) (FIGS. 3A and 3B) is formed. In one embodiment, the first mask (301) is a digital or virtual mask. In one embodiment, the first mask (301) is formed in a virtual mask device (101). The virtual mask device (101) may include vMASC software. The virtual mask device (101) uses a target design and generates a first mask (301), which may be a digital representation of the first mask (301) (i.e., a digital mask or virtual mask). The digital representation of the mask may be identical to the target design, or the digital representation may also include changes to compensate for the projection system or process. In other words, the first mask (301) may include variations or corrections due to process drift or other imperfections in the lithography method. As described below, the first mask (301) is used to create a desired pattern on the substrate.

[0025] According to one embodiment, the first mask (301) is a composite mask formed from a plurality of previously used virtual masks. Although the term 'first mask' is used throughout this disclosure, it should be understood that the first mask (301) may include a plurality of masks depending on the desired patterning. For example, in cases where critical dimensions (CDs) require three-dimensional control, such as for taper control, gray-tone printing, or digital features, a plurality of masks may be used.

[0026] In operation (204), a first mask (301) is transmitted from a virtual mask device (101) to a lithography tool (103) via a communication link (105). In one embodiment, operation (204) includes transmitting a file having data to assist the lithography tool (103) in generating the first pattern. In some embodiments, a pixelated version of the first mask (301) is generated by illuminating light from the lithography tool (103) via digital micro-mirror devices and projection systems.

[0027] In operation (206), a first pattern (311) (FIGS. 3C and 3D) is formed on a first substrate (350) (FIGS. 3A to 3D) using a first mask. According to one embodiment, the first pattern (311) is formed using a lithography tool (103). The lithography tool (103) is configured to form a pattern from a digital or virtual mask on the substrate. The lithography tool (103) uses a digital lithography technique, although other virtual or digital lithography tools are contemplated.

[0028] The substrate selection may include any suitable transparent material including, but not limited to, amorphous dielectrics, crystalline dielectrics, silicon oxide, polymers, and combinations thereof. In one example, the substrate comprises silicon dioxide (SiO2). The substrate includes any other additional layers disposed on the substrate, such as layers that are present to be selectively removed or etched in a lithographic process.

[0029] FIG. 3A illustrates a plan view of a portion of a first substrate (350) overlaid with a first mask (301), according to one embodiment. FIG. 3B illustrates a side view of a portion of a first substrate (350) overlaid with a first mask (301), according to one embodiment. As depicted, the substrate (350) includes a first layer (310). The first layer (310) may include (but is not limited to) silicon (Si), polysilicon (poly-Si), silicon dioxide (SiO2), tungsten (W), copper (Cu), silicon nitride (SiN), silicon carbide (SiC), and any combination thereof. In some embodiments, the substrate (350) includes one or more other layers, such as, but not limited to, metal layers, shallow trench isolation (STI) layers, phosphosilicate glass (PSG) layers, undoped silicate glass (USG) layers, n-doped (n-Si) layers, p-doped (p-Si) layers, poly-Si gate layers, spin on dielectric (SOD) layers, tetraethyl orthosilicate (TEOS) layers, and any combination thereof.

[0030] As illustrated, the first mask (301) includes a plurality of features (302, 303). While the plurality of features (302, 303) are illustrated as having a particular shape, it should be understood that any shaped features may be used in the first mask (301). The plurality of features (302, 303) have one or more target values or CDs associated with each of the plurality of features. For example, each of the plurality of features (302, 303) has a different thickness (305, 306, 307, 308) corresponding to different portions of the features. The plurality of features (302, 303) also include a plurality of angles (320, 321) and inter-feature distances (309).

[0031] FIG. 3c illustrates a plan view of a first substrate (350) after a first pattern (311) is formed, according to one embodiment. FIG. 3d illustrates a side view of the first substrate (350) after a first pattern (311) is formed, according to one embodiment. As illustrated, the first pattern (311) includes a plurality of pattern elements (312, 313). The plurality of pattern elements (312, 313) correspond to a plurality of features (302, 303) of the first mask (301). The plurality of pattern elements (312, 313) have one or more measurement values associated with each of the plurality of pattern elements. For example, each of the plurality of pattern elements (312, 313) has different thicknesses (315, 316, 317, 318) corresponding to different portions of the features. The plurality of pattern elements (312, 313) also include a plurality of angles (330, 331) and distances (319) between the pattern elements. The pattern elements (312, 313) may have different thicknesses (315, 316, 317, 318), distances (319), and angles (330, 331) due to errors during the lithography process, tool or process drift, or due to inherent uncertainties of the lithography process.

[0032] In operation (208), the first substrate is transferred from the lithography tool (103) to the metrology tool (102) via the transfer system (106). In some embodiments, before the first substrate is transferred to the metrology tool (102), the first substrate undergoes additional processes, such as developing and/or etching processes.

[0033] In operation (210), a first mask is transmitted from a virtual mask device (101) to a metrology tool (102) via a communication link (105). In one embodiment, operation (210) includes transmitting a UMF having data to assist the metrology tool (102) in analyzing the first mask.

[0034] In operation (212), one or more measurement values are determined. In one embodiment, the one or more measurement values are determined using a measurement tool (102). The measurement tool (102) can include a number of measurement tools, such as, but not limited to, optical microscopes, electron beam microscopes, scanning electron beam microscopes (SEMs), and any combination thereof. The measurement tool (102) can also include an interface for receiving a first substrate. The measurement tool (102) measures one or more measurement values from the first substrate. For example, the one or more measurement values include measurements of various thicknesses (315, 316, 317, 318), distances (319), and angles (320, 321) of pattern elements (312, 313).

[0035] In operation (214), one or more measurement values are transmitted from the measurement tool (102) to the controller (108) via the communication link (105). In one embodiment, operation (214) includes transmitting a UMF with data to assist the controller (108) in determining one or more corrections.

[0036] In operation (216), one or more corrections are determined. According to one embodiment, the one or more corrections are determined using a controller (108). As illustrated in FIG. 1, the controller (108) includes a central processing unit (CPU) (110), support circuits (114), and memory (112). The CPU (110) may be any form of computer processor that can be used in an industrial setting to control a plurality of lithography system tools. A non-volatile memory (112) is coupled to the CPU (110). The memory (112) may be one or more of readily available memory, such as a random access memory (RAM), a read only memory (ROM), a floppy disk, a hard disk, or any other form of digital storage, either local or remote. The support circuits (114) are coupled to the CPU (110) to support the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry, subsystems, etc. The controller (108) may include a central processing unit (CPU) (110) coupled to input/output (I/O) devices found in support circuits (114) and non-volatile memory (112).

[0037] The non-volatile memory (112) may include one or more software applications, such as a control software program. The memory (112) may also include stored media data used by the CPU (110) to perform one or more of the methods described herein. The CPU (110) may be a hardware unit or a combination of hardware units capable of executing software applications and processing data. In some configurations, the CPU (110) includes a central processing unit (CPU), a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and/or a combination of such units. The CPU (110) is generally configured to execute one or more software applications, each of which may be included within the memory (112), and to process stored media data. The controller (108) controls the transfer of data and files to and from the various lithography system tools. In one embodiment, the memory (112) is configured to store instructions corresponding to any portion of the method (200) described above or below.

[0038] The controller (108) compares the one or more measurement values to the one or more target values to determine one or more corrections. For example, the controller compares the thickness (305) of the feature (302) to the thickness (315) of the pattern element (312), and the difference between the two thicknesses is the correction. Similar comparisons can be made between the angles (320, 321) of the feature (302 and/or 303) and the angles (330, 331) of the pattern element (312 and/or 313). The one or more corrections can be global (i.e., each of the pattern elements has the same or similar correction size), or the one or more corrections can be local (i.e., only one or some of the pattern elements, e.g., only the pattern element (312), has a particular correction). In any case, one or more of the corrections indicate where the lithography process was performed unacceptably due to the various tolerances required on the patterned substrate.

[0039] In operation (218), one or more corrections are transmitted from the controller (108) to the simulator (104) via the communication link (105). In one embodiment, operation (218) includes transmitting a UMF with data to assist the simulator (104) in determining a correction table.

[0040] In operation (220), a correction table is determined from one or more corrections. The correction table includes data that determines adjustments for a given deviation from a desired target value. For example, the correction table includes a polygon bias table as a function of CDs. Each feature (e.g., 302) may include one or more geometric shapes or polygons for creating the desired feature. The polygon bias table includes values that vary the size, dimensions, and/or shape of each of the polygons included in the feature. To correct the CD of a given feature (302), a polygon bias table is constructed that includes values necessary to shape the polygons in an appropriate manner to correct for the growth of the desired pattern element (e.g., pattern element (312)).

[0041] For example, if a target thickness (e.g., 305) of a feature (e.g., 302) is about 2.0 μm, but a metrological measurement of a thickness (e.g., 315) of a pattern element (e.g., 312) is about 2.5 μm, then the deviation from the target value is +0.5 μm. Based on experimental data or simulations, the table determines the amount of polygon bias for a +0.5 μm deviation, which may be, for example, -0.1 μm. Accordingly, one or more of the polygons are adjusted to generate a compensation table having an appropriate polygon bias.

[0042] In some embodiments, an experimental-based calibration table is used. To generate the experimental-based calibration table, a pattern having several polygonal biases is printed and the printed CDs are measured (e.g., thickness (315)). Thus, an experimental-based calibration table can be generated that includes the difference between the measured CDs and the target CDs versus the polygonal bias.

[0043] In some embodiments, the simulator (104) is used to generate a simulation-based correction table. The simulator (104) simulates lithography and resist behavior and follows the same approach to generate a simulation-based correction table. The simulator (104) can simulate not only the lithography tool (103) but also any other processes in the lithography process, such as the photoresist process, by using the calibrated models for experimental results. In some embodiments, the simulator (104) determines the amount of corrections directly from the calibrated models, instead of or in addition to using the correction table.

[0044] In operation (222), the correction table is transmitted from the simulator (104) to the virtual mask device (101) via a communication link (105).

[0045] In operation (224), a second mask is formed. In one embodiment, the second mask is a digital or virtual mask. In one embodiment, the second mask is formed in a virtual mask device (101). The second mask is formed using data from a compensation table, where the compensation table provides information to the virtual mask device (101) regarding how features of the second mask can be modified to improve the quality of a second pattern generated by the second mask. For example, if the pattern thickness (e.g., 315) is smaller than desired, the second mask may include a wider feature thickness (e.g., 305), so that the thickness of the pattern element is larger in the next lithography operation. In another example, if the height of the pattern element (e.g., 312) is too low, the second mask includes a larger exposure dose to the feature (e.g., 302) and/or the second mask includes more exposure operations to the feature, so that the height of the pattern element (312) is larger in the next lithography operation.

[0046] In operation (226), a second mask is transmitted from the virtual mask device (101) to the lithography tool (103) via the communication link (105). In one embodiment, operation (204) includes transmitting a file having data to assist the lithography tool (103) in generating the second pattern.

[0047] In operation (228), a second pattern is formed on a second substrate using a second mask. In one embodiment, the second pattern is formed using a lithography tool (103). Due to improvements in the quality of the second pattern provided to the virtual mask device (101) by the correction table, the second pattern is a more accurate pattern than the first pattern. The second pattern may have reduced corrections that bring the second pattern closer to acceptable tolerances for the ultimate device produced from the patterned substrate.

[0048] In some embodiments, the method (200) is repeated, wherein a second substrate having a second pattern is used as a first substrate having a first pattern in operation (208), and the second mask is used as a first mask in operation (210). The method (200) may be repeated multiple times to sequentially improve the quality of a mask used for lithography in the lithography system (100). In one embodiment, the first mask to be used in operations (202-210) is a composite mask formed from the second mask and one or more previously determined virtual masks.

[0049] As described above, the lithography system includes various components for generating masks, patterning substrates, performing measurements on the patterned substrates, and comparing the measurements to the mask. The method of forming a pattern includes comparing the patterned substrate to the mask, and determining a new mask that incorporates corrections in patterning from a previous mask. The method can be repeated multiple times to sequentially improve the quality of the mask used for lithography in the lithography system.

[0050] The integrated lithography system reduces cost and time for the user. The lithography system makes sequential improvement of masks simpler, since the method of manufacturing the mask can be repeated until the metrology values are within acceptable tolerances. The lithography system can be distributed across multiple locations, reducing the space required to perform the pattern forming method.

[0051] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims (20)

As a method of forming patterns,
Step of forming the first mask;
A step of forming a first pattern on a first substrate using the first mask;
A step of determining one or more measurement values;
A step of determining one or more corrections in the first pattern, wherein the one or more corrections in the first pattern are determined based on one or more target values and one or more measured values,
The one or more target values include a critical dimension (CD) of one or more features of the first mask, the one or more measurement values include a CD of one or more pattern elements of the first pattern, and
wherein said one or more corrections comprise a difference between a CD of said one or more features of said first mask and a CD of said one or more pattern elements of said first pattern;
A step of determining a correction table based on one or more of the above corrections;
a step of forming a second mask, wherein the second mask is determined using the correction table; and
A step of forming a second pattern on a second substrate using the second mask
Including,
How to form patterns. In the first paragraph,
The above method is repeated using the second pattern as the first pattern and the second mask as the first mask.
How to form patterns. In the first paragraph,
The step of forming the first mask and the step of forming the second mask are performed by a virtual mask device,
The above first mask and the above second mask include virtual masks,
The step of forming the first pattern and the step of forming the second pattern are performed by a lithography tool,
The step of determining one or more of the above measurement values is performed by a measurement tool,
The step of determining one or more of the above corrections is performed by the controller, and
The step of determining the above correction table is performed by the simulator.
How to form patterns. In the third paragraph,
A step of transmitting the first mask from the virtual mask device to the lithography tool;
A step of transferring the first substrate from the lithography tool to the metrology tool;
A step of transmitting the first mask from the virtual mask device to the measuring tool;
A step of transmitting one or more measurement values from the measurement tool to the controller;
a step of transmitting one or more of said corrections from said controller to said simulator;
a step of transmitting the correction table from the simulator to the virtual mask device; and
A step of transmitting the second mask from the virtual mask device to the lithography tool.
Including more,
How to form patterns. In the fourth paragraph,
Transmitting the first mask from the lithography tool to the metrology tool includes transmitting a universal metrology file (UMF),
Transmitting the second mask from the lithography tool to the metrology tool comprises transmitting the UMF;
Transmitting said one or more corrections to said simulator comprises transmitting said UMF,
Transmitting said first mask from said virtual mask device to said lithography tool comprises transmitting a second file, and
Transmitting the second mask from the virtual mask device to the lithography tool comprises transmitting a third file.
How to form patterns. In the first paragraph,
The CD of the target value corresponds to the thickness of the one or more features of the first mask, and the CD of the measurement value corresponds to the thickness of the one or more pattern elements of the first pattern.
How to form patterns. In Article 6,
The above difference between the CDs of the correction corresponds to the difference between the thickness of the one or more features of the first mask and the thickness of the one or more pattern elements of the first pattern.
How to form patterns. As a lithography system,
Includes multiple lithography system tools,
The above multiple lithography system tools are:
A virtual mask device configured to form one or more masks;
A lithography tool configured to form one or more patterns on one or more substrates using one or more masks;
A measurement tool configured to determine one or more measurement values from said one or more substrates;
Determining one or more corrections from one or more target values and one or more measurement values, wherein the one or more target values include a CD of one or more features of a first mask, and
wherein said one or more corrections comprise a difference between a CD of said one or more features of said first mask and a CD of said one or more pattern elements of said first pattern —, and
To control the above lithography system;
Configured controller;
A simulator configured to determine a correction table based on one or more of the corrections; and
One or more communication links configured to transmit information between said lithography system tools.
Including,
Lithography system. In Article 8,
The above communication links are configured to transmit a universal metrology file (UMF).
Lithography system. In Article 8,
The above controller comprises a memory,
The above memory enables the lithography system to:
Forming the first mask by the virtual mask device;
Forming the first pattern on the first substrate by the lithography tool using the first mask;
Using the first substrate, one or more measurement values are determined by the measurement tool;
Causing the controller to determine one or more corrections in the first pattern, wherein the one or more corrections in the first pattern are determined based on one or more target values and one or more measured values;
Using one or more of said corrections, the correction table is determined by said simulator;
forming a second mask by the virtual mask device, wherein the second mask is determined using the correction table; and
To form a second pattern on a second substrate by the lithography tool using the second mask.
Contains the composed commands,
Lithography system. In Article 10,
The above memory is,
Transmitting the first mask from the virtual mask device to the lithography tool;
Transferring the first substrate from the lithography tool to the metrology tool;
Transmitting the first mask from the virtual mask device to the measuring tool;
Transmitting one or more of said measurement values from said measurement tool to said controller;
transmitting one or more of said corrections from said controller to said simulator;
transmitting the correction table from the simulator to the virtual mask device; and
For transmitting the second mask from the virtual mask device to the lithography tool.
Including more commands,
Lithography system. In Article 11,
wherein said one or more target values comprise a thickness of one or more features of said first mask;
Lithography system. In Article 12,
The one or more corrections include a difference between a thickness of the one or more features of the first mask and a thickness of the one or more pattern elements of the first pattern.
Lithography system. In Article 11,
The memory further includes instructions for repeating the instructions using the second pattern as the first pattern and the second mask as the first mask.
Lithography system. In Article 8,
One or more of the above masks is a composite mask,
Lithography system. As a lithography system,
Includes multiple lithography system tools,
The above multiple lithography system tools are:
A virtual mask device configured to form one or more masks;
A lithography tool configured to form one or more patterns on one or more substrates using one or more masks;
A measurement tool configured to determine one or more measurement values from said one or more substrates;
Determining one or more corrections from one or more target values and one or more measurement values, wherein the one or more target values include a CD of one or more features of a first mask,
wherein said one or more corrections include a difference between a CD of said one or more features of said first mask and a CD of said one or more pattern elements of said first pattern —, and
To control the above lithography system;
Configured controller;
A simulator configured to determine a correction table based on one or more of the corrections; and
One or more communication links configured to transmit information between said lithography system tools.
Including,
The above communication links are configured to transmit a universal metrology file (UMF).
Lithography system. In Article 16,
The above controller comprises a memory,
The above memory enables the lithography system to:
Forming the first mask by the virtual mask device;
Forming the first pattern on the first substrate by the lithography tool using the first mask;
Using the first substrate, one or more measurement values are determined by the measurement tool;
Causing the controller to determine one or more corrections in the first pattern, wherein the one or more corrections in the first pattern are determined based on one or more target values and one or more measured values;
Using one or more of said corrections, the correction table is determined by said simulator;
forming a second mask by the virtual mask device, wherein the second mask is determined using the correction table; and
To form a second pattern on a second substrate by the lithography tool using the second mask.
Contains the composed commands,
Lithography system. In Article 17,
The above memory is,
Transmitting the first mask from the virtual mask device to the lithography tool;
Transferring the first substrate from the lithography tool to the metrology tool;
Transmitting the first mask from the virtual mask device to the measuring tool;
Transmitting one or more of said measurement values from said measurement tool to said controller;
transmitting one or more of said corrections from said controller to said simulator;
transmitting the correction table from the simulator to the virtual mask device; and
For transmitting the second mask from the virtual mask device to the lithography tool.
Including more commands,
Lithography system. In Article 18,
wherein said one or more target values comprise a thickness of one or more features of said first mask;
Lithography system. In Article 19,
The one or more corrections include a difference between a thickness of the one or more features of the first mask and a thickness of the one or more pattern elements of the first pattern.
Lithography system.