KR102768118B1 - Substrate treating apparatus and method thereof - Google Patents

Abstract

Provided are a substrate treatment device and method for maintaining a constant thickness of a film in a developing process. The substrate treatment method includes: a step of rotating a substrate at a first speed; a step of providing a substrate treatment solution at a first flow rate on the substrate; a step of treating the substrate while controlling the flow rate of the substrate treatment solution according to the rotation speed of the substrate; a step of cleaning the substrate; and a step of drying the substrate.

Description

{Substrate treating apparatus and method thereof}

The present invention relates to a substrate processing device and method. More specifically, it relates to a substrate processing device and method that can be applied to a semiconductor device manufacturing process.

The semiconductor device manufacturing process can be performed continuously within a semiconductor manufacturing facility, and can be divided into a pre-process and a post-process. The semiconductor manufacturing facility can be installed within a semiconductor manufacturing plant defined as a fab, for example, a clean room, to manufacture semiconductor devices.

The pre-process refers to the process of forming a circuit pattern on a wafer to complete a chip. The pre-process may include a deposition process for forming a thin film on a wafer, a photo lithography process for transferring photoresist onto a thin film using a photo mask, an etching process for selectively removing unnecessary parts using chemicals or reactive gases to form a desired circuit pattern on the wafer, an ashing process for removing photoresist remaining after etching, an ion implantation process for implanting ions into a part connected to the circuit pattern to give it the characteristics of an electronic device, a cleaning process for removing contaminants from the wafer, etc.

The post-process refers to the process of evaluating the performance of a product completed through the pre-process. The post-process may include the primary inspection process that inspects the operation of each chip on the wafer to select good products from defective ones; the packaging process that cuts and separates each chip through dicing, die bonding, wire bonding, molding, marking, etc. to form the shape of the product; and the final inspection process that finally inspects the characteristics and reliability of the product through electrical characteristic inspection, burn-in inspection, etc.

In the development process during the photo process, the developing solution can be ejected to the center of the substrate (e.g., wafer) while the substrate is rotated to form a desired pattern on the substrate.

However, when the rotation speed of the substrate is reduced for the puddle process, the developer accumulates in the center of the substrate, which causes a problem in that the liquid film is not formed evenly on the substrate.

The problem to be solved in the present invention is to provide a substrate processing device and method for maintaining a constant thickness of a liquid film in a developing process.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

An aspect of a substrate treatment method of the present invention for achieving the above task comprises: a step of rotating a substrate at a first speed; a step of providing a substrate treatment solution at a first flow rate on the substrate; a step of treating the substrate while controlling the flow rate of the substrate treatment solution according to the rotation speed of the substrate; a step of cleaning the substrate; and a step of drying the substrate.

The above processing step can process the substrate by gradually reducing the rotation speed of the substrate and gradually reducing the flow rate of the substrate processing liquid corresponding to the rotation speed of the substrate.

The above processing step can gradually reduce the rotation speed of the substrate until the substrate no longer rotates.

The above substrate treatment method may further include a step of determining whether the thickness of a liquid film formed on the substrate by the substrate treatment liquid is equal to or greater than a reference value, as a step performed between the treatment step and the cleaning step.

If the thickness of the above film is determined to be greater than or equal to a reference value, the cleaning step and the drying step may be performed in sequence, and if the thickness of the above film is determined to be less than or equal to a reference value, the substrate may be reprocessed by changing the rotation speed of the substrate and the flow rate of the substrate treatment liquid.

The above reprocessing step can reprocess the substrate by increasing the rotation speed of the substrate and the flow rate of the substrate processing solution.

The above reprocessing step can reprocess the substrate by gradually reducing the rotation speed of the substrate after a certain period of time has elapsed and gradually reducing the flow rate of the substrate processing solution in response to the rotation speed of the substrate.

The above substrate treatment method can be applied to the development process.

In addition, one aspect of the substrate processing device of the present invention for achieving the above task includes: a substrate support module that supports a substrate and rotates the substrate using a spin head; a processing solution recovery module that recovers a substrate processing solution used to process the substrate; an elevation module that elevations the substrate support module; and a nozzle, the nozzle including a spray module that provides the substrate processing solution onto the substrate through the nozzle, and when processing the substrate, the nozzle controls the flow rate of the substrate processing solution according to the rotation speed of the substrate.

The spin head can stepwise reduce the rotation speed of the substrate, and the nozzle can stepwise reduce the flow rate of the substrate treatment liquid in response to the rotation speed of the substrate.

Specific details of other embodiments are included in the detailed description and drawings.

Figure 1 is a drawing schematically showing the internal configuration of a substrate processing system applied to manufacturing semiconductor devices.
FIG. 2 is a drawing schematically showing the internal structure of a substrate processing device constituting a substrate processing system according to one embodiment of the present invention.
FIG. 3 is a first exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart.
FIG. 4 is an exemplary diagram to further explain each step of a substrate processing method according to one embodiment of the present invention.
FIG. 5 is a second exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart.
FIG. 6 is a third exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become apparent with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the present embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

When elements or layers are referred to as being "on" or "on" another element or layer, this includes not only directly on the other element or layer, but also cases where there are other layers or elements intervening. In contrast, when elements are referred to as being "directly on" or "directly above" an element, this indicates that there are no other intervening elements or layers.

The spatially relative terms "below," "beneath," "lower," "above," "upper," and the like can be used to easily describe the relationship of one element or component to another element or component, as depicted in the drawings. The spatially relative terms should be understood to include different orientations of the elements when used or operated in addition to the orientations depicted in the drawings. For example, if an element depicted in the drawings is flipped over, an element described as "below" or "beneath" another element may be placed "above" the other element. Thus, the exemplary term "below" can include both the above and below orientations. The elements may also be oriented in other directions, and thus the spatially relative terms may be interpreted according to the orientation.

Although the terms first, second, etc. are used to describe various elements, components, and/or sections, it is to be understood that these elements, components, and/or sections are not limited by these terms. These terms are merely used to distinguish one element, component, or section from other elements, components, or sections. Thus, it should be understood that a first element, a first component, or a first section referred to hereinafter may also be a second element, a second component, or a second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing embodiments only and is not intended to be limiting of the invention. As used herein, the singular includes the plural unless the context clearly dictates otherwise. The terms "comprises" and/or "comprising" as used herein do not exclude the presence or addition of one or more other components, steps, operations, and/or elements.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with a meaning that can be commonly understood by a person of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries shall not be ideally or excessively interpreted unless explicitly specifically defined.

Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. When describing with reference to the attached drawings, identical or corresponding components are given the same reference numerals regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

The present invention relates to a substrate processing device and method capable of maintaining a constant thickness of a liquid film for a puddle process. Hereinafter, the present invention will be described in detail with reference to drawings and the like.

FIG. 1 is a drawing schematically showing the internal configuration of a substrate processing system applied to manufacturing semiconductor devices. According to FIG. 1, a substrate processing system (100) may be configured to include a substrate processing device (110), a substrate processing solution providing device (120), and a control device (Controller; 130).

The substrate processing device (110) processes a substrate using a chemical solution (e.g., a chemical solution). This substrate processing device (110) can be applied to a photo lithography process, for example, a development process, and can provide the chemical solution onto the substrate when the substrate is rotated to form a desired pattern on the substrate.

The solution may be, for example, a developer. Hereinafter, the solution used to treat a substrate is defined as a substrate treatment solution.

The substrate treatment device (110) can rotate the substrate and provide a chemical solution on the substrate when applied to the development process as described above. When the substrate treatment device (110) is provided as a liquid treatment chamber in this manner, it can be configured to include, for example, a substrate support module (210), a treatment solution recovery module (220), an elevation module (230), and a spray module (240) as shown in FIG. 2.

FIG. 2 is a drawing schematically showing the internal structure of a substrate processing device constituting a substrate processing system according to one embodiment of the present invention. The following description refers to FIG. 2.

The substrate support module (210) supports the substrate (W). When processing the substrate (W), the substrate support module (210) can rotate the substrate (W) in a vertical direction (first direction (10) and second direction (20)) with respect to the third direction (30). The substrate support module (210) can be placed inside the treatment solution recovery module (220) to recover the substrate treatment solution used when processing the substrate (W).

The substrate support module (210) may be configured to include a spin head (211), a rotation shaft (212), a rotation driving unit (213), a support pin (214), and a guide pin (215).

The spin head (211) rotates along the rotational direction of the rotation axis (212) (the vertical direction of the third direction (30)). The spin head (211) may be provided to have the same shape as the shape of the substrate (W). However, the present embodiment is not limited thereto. The spin head (211) may also be provided to have a different shape from the shape of the substrate (W).

The rotation shaft (212) generates rotational force using energy provided from the rotational driving unit (213). This rotational shaft (212) is coupled to the rotational driving unit (213) and the spin head (211), respectively, and can transmit the rotational force by the rotational driving unit (213) to the spin head (211). The spin head (211) rotates along the rotational shaft (212), and in this case, the substrate (W) mounted on the spin head (211) can also rotate together with the spin head (211).

The support pin (214) and the guide pin (215) are used to fix the position of the substrate (W) on the spin head (211). For this purpose, the support pin (214) supports the bottom surface of the substrate (W) on the spin head (211), and the guide pin (215) supports the side surface of the substrate (W). A plurality of support pins (214) and guide pins (215) may be installed on the spin head (211).

The support pin (214) can be arranged to have an overall annular ring shape. The support pin (214) can thereby support the lower surface of the substrate (W) so that the substrate (W) can be spaced a certain distance from the upper portion of the spin head (211).

The guide pin (215) is a chucking pin that can support the substrate (W) so that the substrate (W) does not deviate from its original position when the spin head (211) rotates.

The treatment solution recovery module (220) recovers the substrate treatment solution used to treat the substrate (W). The treatment solution recovery module (220) can be installed to surround the substrate support module (210), thereby providing a space in which a treatment process for the substrate (W) is performed.

After the substrate (W) is placed and fixed on the substrate support module (210) and starts to rotate by the substrate support module (210), the spray module (240) can spray the substrate treatment liquid onto the substrate (W) under the control of the controller module (250). Then, the substrate treatment liquid discharged onto the substrate (W) can be dispersed in the direction where the treatment liquid recovery module (220) is located due to the centrifugal force generated by the rotational force of the substrate support module (210). In this case, the treatment liquid recovery module (220) can recover the substrate treatment liquid when the substrate treatment liquid flows into it through an inlet (i.e., a first opening (224) of a first recovery container (221) described below, a second opening (225) of a second recovery container (222), a third opening (226) of a third recovery container (223), etc.).

The treatment liquid recovery module (220) may be configured to include a plurality of recovery containers. The treatment liquid recovery module (220) may be configured to include, for example, three recovery containers. When the treatment liquid recovery module (220) is configured to include a plurality of recovery containers in this manner, the substrate treatment liquid used in the substrate treatment process can be separated and recovered using the plurality of recovery containers, thereby enabling the recycling of the substrate treatment liquid.

When the treatment liquid recovery module (220) is configured to include three recovery tanks, it may include a first recovery tank (221), a second recovery tank (222), and a third recovery tank (223). The first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) may be implemented as, for example, bowls.

The first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) can recover different substrate treatment solutions. For example, the first recovery tank (221) can recover a rinse solution (e.g., DI Water (Deionized Water)), the second recovery tank (222) can recover a first chemical solution, and the third recovery tank (223) can recover a second chemical solution.

The first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) can be connected to recovery lines (227, 228, 229) extending downward (in the third direction (30)) from their bottom surfaces. The first treatment liquid, the second treatment liquid, and the third treatment liquid recovered through the first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) can be processed so that they can be reused through a treatment liquid regeneration system (not shown).

The first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) may be provided in an annular ring shape surrounding the substrate support module (210). The first recovery tank (221), the second recovery tank (222), and the third recovery tank (223) may increase in size from the first recovery tank (221) to the third recovery tank (223) (i.e., in the second direction (20)). When the gap between the first recovery tank (221) and the second recovery tank (222) is defined as the first gap, and the gap between the second recovery tank (222) and the third recovery tank (223) is defined as the second gap, the first gap may be the same as the second gap. However, the present embodiment is not limited thereto. The first gap may also be different from the second gap. That is, the first gap may be larger than the second gap, or may be smaller than the second gap.

The lifting module (230) moves the treatment liquid recovery module (220) in a straight line in the up-and-down direction (third direction (30)). Through this, the lifting module (230) can play a role in adjusting the relative height of the treatment liquid recovery module (220) with respect to the substrate support module (210) (or substrate (W)).

The lifting module (230) may be configured to include a bracket (231), a first support shaft (232), and a first driving unit (233).

The bracket (231) is fixed to the outer wall of the treatment liquid recovery module (220). The bracket (231) can be combined with a first support shaft (232) that moves up and down by a first driving unit (233).

When the substrate (W) is mounted on the substrate support module (210), the substrate support module (210) may be positioned above the treatment solution recovery module (220). Similarly, when the substrate (W) is detached from the substrate support module (210), the substrate support module (210) may be positioned above the treatment solution recovery module (220). In the above case, the lifting module (230) may serve to lower the treatment solution recovery module (220).

When a treatment process for a substrate (W) is performed, depending on the type of substrate treatment liquid discharged onto the substrate (W), the corresponding treatment liquid may be recovered in one of the first recovery tank (221), the second recovery tank (222), and the third recovery tank (223). Even in this case, the elevating module (230) may serve to elevate the treatment liquid recovery module (220) to a corresponding position. For example, when the first treatment liquid is used as the substrate treatment liquid, the elevating module (230) may elevate the treatment liquid recovery module (220) so that the substrate (W) is positioned at a height corresponding to the first opening (224) of the first recovery tank (221).

Meanwhile, in the present embodiment, it is also possible to adjust the relative height of the treatment liquid recovery module (220) with respect to the substrate support module (210) (or the substrate (W)) by having the lifting module (230) move the substrate support module (210) in a straight line in the up-and-down direction.

However, the present embodiment is not limited thereto. The lifting module (230) can also adjust the relative height of the treatment solution recovery module (220) with respect to the substrate support module (210) (or the substrate (W)) by simultaneously moving the substrate support module (210) and the treatment solution recovery module (220) in a straight line in the up-and-down direction.

The spray module (240) supplies a substrate treatment liquid onto the substrate (W) when processing the substrate (W). At least one such spray module (240) may be installed in the substrate treatment unit (120). When a plurality of spray modules (240) are installed in the substrate treatment unit (120), each spray module (240) may spray a different substrate treatment liquid onto the substrate (W).

The injection module (240) may be configured to include a nozzle (241), a nozzle support (242), a second support shaft (243), and a second driving unit (244).

The nozzle (241) is installed at the end of the nozzle support (242). This nozzle (241) can be moved to the process position or the standby position by the second driving unit (244).

In the above, the process position refers to the upper area of the substrate (W), and the standby position refers to the remaining area excluding the process position. When the nozzle (241) ejects the substrate treatment liquid onto the substrate (W), it can be moved to the process position, and after ejecting the substrate treatment liquid onto the substrate (W), it can be moved out of the process position and to the standby position.

The nozzle support (242) supports the nozzle (241). This nozzle support (242) can be formed to extend in a direction corresponding to the longitudinal direction of the spin head (211). That is, the nozzle support (242) can be provided with its longitudinal direction along the second direction (20).

The nozzle support (242) can be combined with a second support shaft (243) that is formed to extend in a direction perpendicular to the length direction of the nozzle support (242). The second support shaft (243) can be formed to extend in a direction corresponding to the height direction of the spin head (211). That is, the length direction of the second support shaft (243) can be provided along the third direction (30).

The second driving unit (244) rotates and elevates the second support shaft (243) and the nozzle support unit (242) linked to the second support shaft (243). According to this function of the second driving unit (244), the nozzle (241) can be moved to the process position or the standby position.

This is explained again with reference to Figure 1.

The substrate treatment solution providing device (120) provides the substrate treatment solution to the substrate treatment device (110). For this purpose, the substrate treatment solution providing device (120) can be connected to the spray module (240) of the substrate treatment device (110) and can operate under the control of the control device (130).

The control device (130) controls the operation of the substrate processing device (110). Specifically, the control device (130) can control the operation of the rotation driving unit (213) of the substrate support module (210), the first driving unit (233) of the elevating module (230), and the second driving unit (244) of the injection module (240).

The control device (130) may be implemented as a computer or a server, including a process controller, a control program, an input module, an output module (or a display module), a memory module, etc. In the above, the process controller may include a microprocessor that executes a control function for each component constituting the substrate processing device (110), and the control program may execute various processes of the substrate processing device (110) according to the control of the process controller. The memory module stores a program for executing various processes of the substrate processing device (110) according to various data and processing conditions, i.e., a processing recipe.

Meanwhile, the control device (130) can also control the operation of the substrate treatment solution providing device (120) so that the substrate treatment solution can be supplied from the substrate treatment solution providing device (120) to the substrate treatment device (110) when necessary.

In the developing process, a substrate treatment solution (i.e., a developing solution) may be provided on the substrate (W) while rotating the substrate (W) so that a liquid film may be formed on the substrate (W). At this time, the spin head (211) may rotate the substrate (W) at a low speed to smoothly form the liquid film.

However, when the rotation speed of the substrate (W) decreases while the substrate treatment liquid is continuously supplied at a constant level, the substrate treatment liquid cannot move from the center of the substrate (W) to the outside and accumulates at the center of the substrate (W). Then, a problem of uneven formation of the thickness of the liquid film on the substrate (W) may occur. That is, the thickness of the liquid film must be maintained evenly before the puddle process, but in the low RPM section, the substrate treatment liquid is spun out by force during the DEV (Development) center dispense, and thus, a center undevelop phenomenon may occur. In addition, the CD range may increase due to the center undevelop phenomenon.

In this embodiment, the flow rate (or flow velocity) of the substrate treatment liquid is controlled according to the rotation speed of the substrate (W) in order to maintain the thickness of the liquid film formed on the substrate (W) constant. This will be described below.

FIG. 3 is a first exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart. The following description refers to FIG. 3.

When the substrate (W) is placed on the spin head (211) and the position of the substrate (W) is fixed by the support pin (214) and the guide pin (215), the spin head (211) rotates the substrate (W) at a high speed (S310). The spin head (211) can rotate the substrate (W) at, for example, a first speed (unit: RPM).

Thereafter, the nozzle (241) of the injection module (240) ejects the substrate treatment liquid supplied from the substrate treatment liquid providing device (120) onto the substrate (W) (S320). The nozzle (241) can eject the substrate treatment liquid to the center of the substrate (W), and in this case, the flow rate of the nozzle (241) can be, for example, a first flow rate (unit: cc/min).

In the above, the nozzle (241) can eject the substrate treatment liquid onto the substrate (W) when the spin head (211) rotates the substrate (W). For example, as shown in FIG. 4, the nozzle (241) can eject the substrate treatment liquid (410) at a first flow rate onto the center region (420) of the substrate (W) when the spin head (211) rotates the substrate (W). FIG. 4 is an exemplary diagram for further explaining each step of the substrate treatment method according to one embodiment of the present invention.

In the above, when the nozzle (241) ejects the substrate treatment liquid onto the substrate (W), the spin head (211) can rotate the substrate (W) at the same speed as before (S310). The spin head (211) can rotate the substrate (W) at, for example, a first speed.

This is explained again with reference to Figure 3.

Thereafter, after a predetermined period of time has elapsed, the spin head (211) may reduce the rotation speed of the substrate (W) for the puddle process (S330). In the above, the puddle process refers to a process in which the substrate treatment solution (developing solution) discharged on the substrate (W) is developed using surface tension in a situation in which the substrate (W) is rotated at an ultra-low speed (e.g., 10 RPM or less) or is not rotated.

In this embodiment, as described above, the flow rate of the substrate treatment liquid can be controlled according to the rotation speed of the substrate (W). Therefore, when the spin head (211) reduces the rotation speed of the substrate (W), the nozzle (241) also reduces the flow rate of the substrate treatment liquid (S340).

For the puddle process, the spin head (211) can reduce the rotation speed of the substrate (W) until the substrate (W) no longer rotates. In this case, the spin head (211) can gradually reduce the rotation speed of the substrate (W) until the rotation speed of the substrate (W) becomes 0. That is, the reduction in the rotation speed of the substrate (W) can be repeated N times (wherein, N is a natural number greater than or equal to 1). For example, the spin head (211) can rotate the substrate (W) at a second speed that is slower than the first speed for a time t1, then rotate the substrate (W) at a third speed that is slower than the second speed for a time t2, and then not rotate the substrate (W) for a time t3.

In the above, t1, t2 and t3 may not be the same time. However, the present embodiment is not limited thereto. t1, t2 and t3 may all be the same time, or some may be the same and others may be different.

When the rotation speed of the substrate (W) is reduced stepwise as described above, the flow rate of the substrate treatment liquid may also be reduced stepwise like the rotation speed of the substrate (W). That is, the flow rate of the substrate treatment liquid may also be reduced each time the rotation speed of the substrate (W) is reduced. For example, when the spin head (211) rotates the substrate (W) at a second speed for a time t1, the nozzle (241) supplies the substrate treatment liquid at a second flow rate that is less than the first flow rate, and thereafter, when the spin head (211) rotates the substrate (W) at a third speed for a time t2, the nozzle (241) supplies the substrate treatment liquid at a third flow rate that is less than the second flow rate, and when the spin head (211) does not rotate the substrate (W) for a time t3, the nozzle (241) may supply the substrate treatment liquid at a fourth flow rate that is less than the third flow rate.

When the process of treating the substrate (W) by the nozzle (241) providing the substrate treatment solution at the third flow rate onto the substrate (W) without the spin head (211) rotating the substrate (W) for t3 hours is completed, the work of cleaning the substrate (W) can be performed. In this case, the spin head (211) rotates the substrate (W) and the nozzle (241) provides a rinse solution (e.g., DI (Deionized) Water) onto the substrate (W) (S350).

In the above, when the substrate (W) is cleaned using a rinse solution, the spin head (211) can rotate the substrate (W) at a fourth speed. Here, the fourth speed may be a speed faster than the first speed.

In addition, the spin head (211) can increase the rotation speed of the substrate (W) while the substrate (W) is being cleaned. That is, the spin head (211) can increase the rotation speed of the substrate (W) stepwise by repeating N times. For example, the spin head (211) can rotate the substrate (W) at a fourth speed for a time t4, and then rotate the substrate (W) at a fifth speed that is faster than the fourth speed for a time t5.

In the above, t4 and t5 may be different values. However, the present embodiment is not limited thereto. t4 and t5 may be the same values.

Meanwhile, after the substrate (W) is cleaned using a rinse solution, a process of drying the substrate (W) may be performed (S360). When drying the substrate (W), the spin head (211) may rotate the substrate (W), but in the present embodiment, the substrate (W) may not be rotated.

In the substrate treatment process described with reference to the above drawing 3, the substrate (W) is treated while reducing the rotation speed of the substrate (W) and reducing the flow rate of the substrate treatment solution (S310 to S340), and then a cleaning process (S350) and a drying process (S360) are performed in sequence.

However, the present embodiment is not limited to this. It is also possible to process the substrate (W) again by increasing the rotation speed of the substrate (W) again and increasing the flow rate of the substrate processing liquid. This will be described below.

In order to manufacture a semiconductor device of high quality, a liquid film of a desired thickness needs to be formed on the substrate (W) in the development process. In this embodiment, if the thickness of the liquid film formed on the substrate (W) is less than a reference value, the processing process of the substrate (W) can be repeated.

FIG. 5 is a second exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart. The following description refers to FIG. 5.

After the substrate (W) is placed on the spin head (211) and the substrate (W) is fixed in position by the support pin (214) and the guide pin (215), the spin head (211) rotates the substrate (W) at high speed (S510).

Thereafter, the nozzle (241) of the injection module (240) ejects the substrate treatment liquid supplied from the substrate treatment liquid providing device (120) onto the substrate (W) (S520).

After a predetermined period of time has elapsed, the spin head (211) gradually reduces the rotation speed of the substrate (W) N times so that a liquid film can be formed on the substrate (W) (S530). In this case, the nozzle (241) also gradually reduces the flow rate of the substrate treatment liquid supplied onto the substrate (W) N times (S540). The above processes (S530 and S540) may be continued until the substrate (W) does not rotate, and may also be continued until the substrate (W) rotates at an ultra-low speed (for example, 10 RPM or less).

Thereafter, the thickness of the liquid film formed on the substrate (W) is measured, and it is determined whether the thickness of the liquid film is greater than or equal to a reference value (S550). If the thickness of the liquid film is greater than or equal to the reference value according to the determination result, a cleaning process using a rinse solution (S580) and a drying process (S590) are performed in sequence.

On the other hand, if the thickness of the film is determined to be less than the reference value, the rotation speed of the substrate (W) is increased using the spin head (211), and the flow rate of the substrate treatment liquid supplied onto the substrate (W) is also increased using the nozzle (241) (S560).

When the spin head (211) increases the rotation speed of the substrate (W), the rotation speed of the substrate (W) can be increased to have the same value as the second speed. However, the present embodiment is not limited thereto. The spin head (211) can increase the rotation speed of the substrate (W) to have a value greater than the second speed, and can also increase the rotation speed of the substrate (W) to have a value smaller than the second speed.

Likewise, when the nozzle (241) increases the flow rate of the substrate treatment liquid, the flow rate of the substrate treatment liquid can be increased to have the same value as the second flow rate. However, the present embodiment is not limited thereto. The nozzle (241) can be increased to have the flow rate of the substrate treatment liquid to have a value greater than the second flow rate, and it is also possible to increase the flow rate of the substrate treatment liquid to have a value smaller than the second flow rate.

The spin head (211) can increase the rotation speed of the substrate (W) and then gradually decrease the rotation speed of the substrate (W) N times as described above through steps S330 and S340. In this case, it goes without saying that the rotation speed of the substrate (W) is gradually decreased until the rotation speed of the substrate (W) becomes 0.

Similarly, the nozzle (241) can increase the flow rate of the substrate treatment liquid and then gradually decrease the flow rate of the substrate treatment liquid N times as described above through steps S330 and S340 (above S570).

Meanwhile, after step S570, step S550 may be performed again, and depending on the result, steps S560 and S570 may be performed again, or steps S580 and S590 may be performed subsequently.

Meanwhile, in this embodiment, it is possible to repeatedly perform the substrate treatment process using the substrate treatment solution according to the number of processes instead of repeatedly performing the substrate treatment process using the substrate treatment solution according to the thickness of the film. This will be described below.

FIG. 6 is a third exemplary diagram sequentially explaining a substrate processing method according to one embodiment of the present invention in a flow chart. The following description refers to FIG. 3.

After the substrate (W) is placed on the spin head (211) and the substrate (W) is fixed in position by the support pin (214) and the guide pin (215), the spin head (211) rotates the substrate (W) at high speed (S610).

Thereafter, the nozzle (241) of the injection module (240) ejects the substrate treatment liquid supplied from the substrate treatment liquid providing device (120) onto the substrate (W) (S620).

After a predetermined period of time has elapsed, the spin head (211) gradually reduces the rotation speed of the substrate (W) N times so that a liquid film can be formed on the substrate (W) (S630). In this case, the nozzle (241) also gradually reduces the flow rate of the substrate treatment liquid supplied onto the substrate (W) N times (S640). The above processes (S630 and S640) may be continued until the substrate (W) does not rotate, and may also be continued until the substrate (W) rotates at an ultra-low speed (for example, 10 RPM or less).

Thereafter, it is determined whether the above processes (S630 and S640) have been performed K times or more (S650). If it is determined that the above processes (S630 and S640) have been performed K times or more according to the determination result, the cleaning process (S680) using the rinse solution and the drying process (S690) are performed in sequence.

On the other hand, if it is determined that the above processes (S630 and S640) have not been performed K times or more, the rotation speed of the substrate (W) is increased using the spin head (211), and the flow rate of the substrate treatment solution supplied onto the substrate (W) is also increased using the nozzle (241) (S660).

When the spin head (211) increases the rotation speed of the substrate (W), the rotation speed of the substrate (W) can be increased to have the same value as the second speed. However, the present embodiment is not limited thereto. The spin head (211) can increase the rotation speed of the substrate (W) to have a value greater than the second speed, and can also increase the rotation speed of the substrate (W) to have a value smaller than the second speed.

Likewise, when the nozzle (241) increases the flow rate of the substrate treatment liquid, the flow rate of the substrate treatment liquid can be increased to have the same value as the second flow rate. However, the present embodiment is not limited thereto. The nozzle (241) can be increased to have the flow rate of the substrate treatment liquid to have a value greater than the second flow rate, and it is also possible to increase the flow rate of the substrate treatment liquid to have a value smaller than the second flow rate.

The spin head (211) can increase the rotation speed of the substrate (W) and then gradually decrease the rotation speed of the substrate (W) N times as described above through steps S330 and S340. In this case, it goes without saying that the rotation speed of the substrate (W) is gradually decreased until the rotation speed of the substrate (W) becomes 0.

Similarly, the nozzle (241) can increase the flow rate of the substrate treatment liquid and then gradually decrease the flow rate of the substrate treatment liquid N times as described above through steps S330 and S340 (above S670).

Meanwhile, after step S670, step S650 may be performed again, and depending on the result, steps S660 and S670 may be performed again, or steps S680 and S690 may be performed subsequently.

The substrate processing device (110) and the substrate processing method have been described with reference to the above drawings 1 to 6. The present invention relates to a high viscosity Bump CD improvement recipe. The present invention aims to lower the discharge flow rate by selectively applying the flow rate variably in a low RPM section, thereby obtaining the effect of increasing the center liquid film thickness and improving the center undevelop phenomenon when forming a puddle.

Although an even film thickness must be maintained throughout the puddle (0 RPM) section, in the section where the RPM changes from high to low, the developing liquid is gathered to the center by centrifugal force, and the desired thickness of the film cannot be accumulated at the center due to the continuous same discharge velocity, resulting in the occurrence of a center undevelopment phenomenon, and a phenomenon in which the discontinuity before and after the hydraulic jump increases.

h ~ r _in ² q ^-1/2 = r _in ² (πr _in ² u) ^-1/2 ~ r _in /(u ^1/2 )

According to the above mathematical formula, it can be seen that the thickness (h) of the center region of the liquid film at the point immediately before the hydraulic jump is proportional to the nozzle radius (r _in ) and inversely proportional to the half power of the nozzle discharge velocity (u).

Therefore, in order to solve the above-mentioned problem, the present invention can apply a variable flow rate from high RPM DEV discharge to before low RPM puddle formation. That is, by applying a variable flow rate in the low RPM section before puddle formation, the discharge flow rate can be reduced, and the effect of increasing the center film thickness in proportion to the discharge flow rate and thus improving the center undevelop phenomenon can be obtained.

Although the embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

100: Substrate handling system 110: Substrate handling device
120: Substrate treatment solution providing device 130: Control device
210: Substrate support module 211: Spin head
212: Rotating shaft 213: Rotating drive unit
220: Treatment liquid recovery module 230: Elevating module
240: Injection module 241: Nozzle
410: Substrate treatment solution 420: Central area of substrate

Claims (10)

A step of rotating the substrate at a first speed;
A step of providing a first treatment liquid at a first flow rate on the substrate;
A step of first processing the substrate using the first processing solution;
A step of secondary processing the substrate using a second processing solution; and
Comprising a step of drying the above substrate,
The above first treatment solution is a developing solution, and the above second treatment solution is a rinsing solution.
The above first processing step is to stepwise control the rotation speed of the substrate and the flow rate of the first processing liquid,
The above secondary processing step is a substrate processing method in which the rotation speed of the substrate is gradually adjusted. In paragraph 1,
A substrate processing method in which the first processing step gradually reduces the rotation speed of the substrate, and gradually reduces the flow rate of the first processing liquid in response to the rotation speed of the substrate, thereby controlling the flow rate of the first processing liquid according to the rotation speed of the substrate. In the second paragraph,
The above first processing step is a substrate processing method in which the rotation speed of the substrate is gradually reduced until the substrate no longer rotates. In paragraph 1,
A substrate processing method further comprising a step of determining whether the thickness of a liquid film formed on the substrate by the first processing liquid is equal to or greater than a reference value. In paragraph 4,
If the thickness of the above film is determined to be greater than the standard value, the second processing step and the drying step are performed in sequence.
A substrate processing method comprising: performing a step of reprocessing the substrate by changing the rotation speed of the substrate and the flow rate of the first processing liquid when the thickness of the above film is determined to be less than a reference value. In paragraph 5,
A substrate processing method in which the above reprocessing step reprocesses the substrate by increasing the rotation speed of the substrate and the flow rate of the first processing liquid. In paragraph 6,
A substrate processing method in which the above reprocessing step comprises: gradually reducing the rotation speed of the substrate after a certain period of time has elapsed; and gradually reducing the flow rate of the first processing liquid in response to the rotation speed of the substrate to reprocess the substrate. In paragraph 1,
The above substrate treatment method is a substrate treatment method applied to the development process. A substrate support module that supports a substrate and rotates the substrate using a spin head;
A treatment solution recovery module for recovering the first treatment solution and the second treatment solution used to treat the above substrate;
An elevating module for elevating the above substrate support module; and
It includes a nozzle, and includes a spray module that provides the first treatment liquid and the second treatment liquid onto the substrate through the nozzle,
The substrate is first treated using the first treatment solution, and the substrate is second treated using the second treatment solution.
The above first treatment solution is a developing solution, and the above second treatment solution is a rinsing solution.
When the substrate is first processed, the rotation speed of the substrate and the flow rate of the first processing liquid are adjusted stepwise,
A substrate processing device that steps up and down the rotation speed of the substrate when performing secondary processing on the substrate. In Article 9,
The above spin head gradually reduces the rotation speed of the substrate,
A substrate processing device in which the nozzle controls the flow rate of the first processing liquid according to the rotation speed of the substrate by gradually reducing the flow rate of the first processing liquid in response to the rotation speed of the substrate.

Images