KR102806495B1 - Method of manufacturing a iii-nitride semiconductor light emitting device - Google Patents

Abstract

The present disclosure relates to a method for manufacturing a III-nitride semiconductor light-emitting device, comprising: a step of selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; a step of selectively growing the first semiconductor light-emitting portion so as to emit blue light and the second semiconductor light-emitting portion so as to emit light having a wavelength longer than blue; and a step of forming at least one electrode so as to supply power to the first semiconductor light-emitting portion and the second semiconductor light-emitting portion.

Description

{METHOD OF MANUFACTURING A III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE}

The present disclosure relates generally to a method for manufacturing a III-nitride semiconductor light-emitting device, and more particularly, to a method for manufacturing a III-nitride semiconductor light-emitting device that emits white light. Here, the III-nitride semiconductor is formed of a compound represented by Al(x)Ga(y)In(1-x-y)N (0≤x≤1, 0≤y≤1, 0≤x+y≤1).

This section provides background information related to the present disclosure which is not necessarily prior art.

Currently, commercial red-emitting semiconductor light-emitting devices (e.g., LEDs, LDs) are manufactured using AlGaInP compound semiconductors, but recently, yellow, amber, orange, red, and infrared-emitting light are being studied using a group III-nitride semiconductor light-emitting structure with InGaN, a group III-nitride semiconductor, as an active region.

FIG. 1 is a drawing showing an example of a conventional red-emitting III-nitride semiconductor light-emitting device, wherein the semiconductor light-emitting device includes a growth substrate (10; for example, a patterned C-plane sapphire substrate (PSS)), a buffer region (20; for example, un-doped GaN (2 μm) formed on a seed layer (low-temperature grown GaN)), an n-side contact region (30; for example, Si-doped GaN (2 to 8 μm) and Si-doped Al _0.03 Ga _0.97 N (1 μm)), a superlattice region (31; for example, 15 periods of GaN (6 nm)/In _0.08 Ga _0.92 N (2 nm)), a 15 nm-thick Si-doped GaN (32), and a quantum well structure with a low In content (41: for example, a quantum well made of In _0.2 Ga _0.8 N (2 nm) and GaN (2 nm)/Al _0.13 Ga _0.87 A red emitting active region (42; e.g., a quantum well made of InGaN (2.5 nm) - a barrier layer made of AlN (1.2 nm)/GaN (2 nm)/Al _0.13 Ga _0.87 N (18 nm)/GaN (3 nm) - a quantum well made of InGaN (2.5 nm) - a barrier layer made of AlN (1.2 nm)/GaN (23 nm)), a 15-nm thick GaN layer (43), a p-side region (50; e.g., Mg-doped GaN (100 nm) and p+-GaN:Mg (10 nm)), a current spreading electrode (60; e.g., ITO), a first electrode (70; e.g., Cr/Ni/Au), and a second electrode (80; e.g., Cr/Ni/Au) (Paper: 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress; Applied Physics Letters, April 2020).

Also, U.S. Patent Publication No. US10,396,240 discloses a red light-emitting semiconductor light-emitting device utilizing an InGaN active region.

FIG. 50 is a drawing showing an example of a III-nitride semiconductor light-emitting device presented in Korean Patent Publication No. 2011-0037616, wherein the III-nitride semiconductor light-emitting device (100) includes a first semiconductor light-emitting portion (110) and a second semiconductor light-emitting portion (120). The first semiconductor light-emitting portion (110) includes a first semiconductor region (110a; e.g., n-side contact region), a first active region (110b; e.g., red light-emitting active region), a second semiconductor region (110c; p-side contact region), a first electrode (113a) electrically connected to the first semiconductor region (110a), and a second electrode (113b) electrically connected to the second semiconductor region (110c). The second semiconductor light-emitting portion (120) includes a first semiconductor region (120a; for example, an n-side contact region), a second active region (120b; for example, a green light-emitting active region), a second semiconductor region (120c; a p-side contact region), a first electrode (123a) electrically connected to the first semiconductor region (120a), and a second electrode (123b) electrically connected to the second semiconductor region (120c). It goes without saying that the first active region (110b) and the second active region (120b) can emit light of complementary colors, thereby emitting white light overall.

FIG. 51 is a drawing showing another example of a III-nitride semiconductor light-emitting device presented in Korean Patent Publication No. 2011-0037616, wherein the III-nitride semiconductor light-emitting device (200) includes a first semiconductor light-emitting portion (110), a second semiconductor light-emitting portion (120), and a third semiconductor light-emitting portion (230). The first semiconductor light-emitting portion (110) includes a first semiconductor region (110a; e.g., n-side contact region), a first active region (110b; e.g., red light-emitting active region), a second semiconductor region (110c; p-side contact region), a first electrode (113a) electrically connected to the first semiconductor region (110a), and a second electrode (113b) electrically connected to the second semiconductor region (110c). The second semiconductor light-emitting portion (120) includes a first semiconductor region (120a; for example, an n-side contact region), a second active region (120b; for example, a green light-emitting active region) and a second semiconductor region (120c; a p-side contact region), a first electrode (123a) electrically connected to the first semiconductor region (120a), and a second electrode (123b) electrically connected to the second semiconductor region (120c). The third semiconductor light-emitting portion (230) includes a first semiconductor region (230a; for example, an n-side contact region), a third active region (230b; for example, a blue light-emitting active region) and a second semiconductor region (230c; a p-side contact region), a first electrode (233a) electrically connected to the first semiconductor region (230a), and a second electrode (233b) electrically connected to the second semiconductor region (230c). Between the first semiconductor light-emitting portion (110) and the second semiconductor light-emitting portion (120), a first insulating layer (130; e.g., SiN ₂ , SiO ₂ , AlN, etc.) is provided for electrical insulation therebetween, and between the second semiconductor light-emitting portion (120) and the third semiconductor light-emitting portion (230), a second insulating layer (240; e.g., SiN ₂ , SiO ₂ , AlN, etc.) is provided for electrical insulation therebetween. A technology for forming the first insulating layer (130) and the second insulating layer (240) using high-resistivity Mg-doped GaN is disclosed in Japanese Patent Application Laid-Open No. 1996-274369, and through this technology, a foundation is established for growth of semiconductor light-emitting portions (110, 120, 230) through a single device (MOCVD equipment). Although the technology for manufacturing all active regions (110b, 120b, 230b) using InGaN has been mentioned in many documents, including U.S. Patent Publication No. 5,684,309, it has not been commercialized to date.

This is described later in the ‘Specific details for carrying out the invention’.

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all of its features.

According to one aspect of the present disclosure, a method for manufacturing a III-nitride semiconductor light-emitting structure that emits red light having a peak emission wavelength of 600 nm or more is provided, the method comprising the steps of: growing a first superlattice region by repeatedly stacking a first sub-layer and a second sub-layer; And, a method for manufacturing a group III nitride semiconductor light-emitting structure is provided, including: a step of growing an active region, on a first superlattice region, a third sub-layer made of a group III nitride semiconductor including Al and having a first band gap energy, a fourth sub-layer made of a group III nitride semiconductor including In and having a second band gap energy smaller than the first band gap energy, and a fifth sub-layer made of a group III nitride semiconductor including Al and having a third band gap energy larger than the second band gap energy; wherein, in the step of growing the active region, the In content of the fourth sub-layer is set so that the fourth sub-layer emits light having an emission peak wavelength of 600 nm or less when the third sub-layer and the fifth sub-layer are GaN, and the Al content of the third sub-layer and the Al content of the fifth sub-layer are set so that the fourth sub-layer emits red light having an emission peak wavelength of 600 nm or more.

According to another aspect of the present disclosure, a III-nitride semiconductor light-emitting device is provided, comprising: an active region that emits red light; and a semi-polar plane provided below the active region and for growth of the active region.

According to another aspect of the present disclosure, a method for measuring a group III nitride semiconductor light-emitting device is provided, the method including: forming a first group III nitride semiconductor light-emitting portion having a first semiconductor region having a first conductivity, a second semiconductor region having a second conductivity different from the first conductivity, and an active region interposed between the first semiconductor region and the second semiconductor region and emitting a first light; and a second group III nitride semiconductor light-emitting portion emitting a second light different from the first light; forming a conductive pad extending from the first semiconductor region to the second group III nitride semiconductor light-emitting portion at sides of the first group III nitride semiconductor light-emitting portion and the second group III nitride semiconductor light-emitting portion; and measuring light emission of the first group III nitride semiconductor light-emitting portion through a first measuring electrode and a second measuring electrode which are in contact with each of the conductive pad side and the second semiconductor region side.

According to one aspect of the present disclosure, a method for manufacturing a III-nitride semiconductor light-emitting device is provided, the method including: selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; wherein the first semiconductor light-emitting portion emits blue light and the second semiconductor light-emitting portion emits light having a wavelength longer than blue; and forming at least one electrode to supply power to the first semiconductor light-emitting portion and the second semiconductor light-emitting portion.

According to one aspect of the present disclosure, a method for manufacturing a III-nitride semiconductor light-emitting device is provided, the method including: a step of selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; wherein the first opening and the second opening are formed in one growth-blocking film; and a step of forming at least one electrode using the growth-blocking film as a passivation film to supply power to the first semiconductor light-emitting portion and the second semiconductor light-emitting portion.

This is described later in the ‘Specific details for carrying out the invention’.

Figure 1 is a drawing showing an example of a conventional red-emitting III-nitride semiconductor light-emitting device.
FIG. 2 is a drawing showing an example of a 3-group nitride semiconductor light-emitting device according to the present disclosure;
FIG. 3 is a drawing showing an example of a semiconductor light-emitting structure according to the present disclosure;
FIG. 4 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure;
FIG. 5 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure;
Figure 6 is a drawing showing an example of an experimental result according to the present disclosure;
Figure 7 is a drawing showing another example of experimental results according to the present disclosure;
Figure 8 is a drawing showing another example of experimental results according to the present disclosure;
FIG. 9 is a drawing showing another example of experimental results according to the present disclosure;
FIG. 10 is a drawing showing another example of experimental results according to the present disclosure;
FIG. 11 is a drawing explaining a semiconductor light-emitting device related to the present disclosure from the perspective of band gap energy.
Figures 12 and 14 are drawings showing further examples of experimental results according to the present disclosure;
Figure 15 is a drawing comparing the active region of a quantum well structure and the active region of a superlattice structure.
Figure 16 is a drawing showing an example of experimental results according to the semiconductor light-emitting structure presented in Table 7.
Figure 17 is a drawing illustrating various examples of semiconductor light-emitting structures to which a superlattice structure is applied.
FIG. 18 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure;
Figures 19 to 21 are drawings illustrating the superlattice region and the lateral growth enhancement layer.
FIG. 22 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure.
Figures 23 to 26 are drawings showing experimental results for the examples presented in Figures 18 to 22.
FIG. 27 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 28 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 29 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 30 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 31 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
Fig. 32 is a drawing showing an example of the aperture pattern presented in Fig. 31;
FIG. 33 is a drawing showing another example of the aperture arrangement of the growth prevention film according to the present disclosure;
FIGS. 34 to 36 are drawings showing an example of a method for manufacturing a semiconductor light-emitting device according to the present disclosure.
FIGS. 37 to 40 are drawings showing another example of a method for manufacturing a semiconductor light-emitting device according to the present disclosure.
Fig. 41 is a drawing showing an example of an experimental result according to the method presented in Figs. 27 to 33.
Fig. 42 is a drawing showing another example of experimental results according to the methods presented in Figs. 27 to 33;
Figure 43 is a graph summarizing the experimental results presented in Figures 41 and 42.
Figure 44 is a drawing showing an example of the results of a photoexcitation (PL) experiment according to the present disclosure.
Figure 45 is a drawing showing an example of the results of an electroluminescence (EL) experiment according to the present disclosure.
FIG. 46 is a drawing showing an example of the results of an electroluminescence (EL) experiment with an added laser according to the present disclosure.
Figures 47 to 49 are drawings explaining the light-emitting principle according to the present disclosure.
FIG. 50 is a drawing showing an example of a 3-group nitride semiconductor light-emitting device presented in Korean Patent Publication No. 2011-0037616.
FIG. 51 is a drawing showing another example of a 3-group nitride semiconductor light-emitting device presented in Korean Patent Publication No. 2011-0037616.
FIG. 52 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure;
FIG. 53 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure.
FIG. 54 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure.
FIG. 55 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure;
FIG. 56 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure.
FIG. 57 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure;
FIG. 58 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure.
FIG. 59 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure;
FIG. 60 is a drawing showing another example of a 3-group nitride semiconductor light-emitting structure or light-emitting device according to the present disclosure.
Figures 61 and 62 are drawings showing experimental results showing actual implementation of the 3-group nitride semiconductor light-emitting structure or light-emitting element described in Figures 52 to 60.
Figure 63 is a drawing showing the experimental results showing the actual implementation of the 3-group nitride semiconductor light-emitting structure or light-emitting element described in Figures 52 to 60.
Figure 64 is a drawing showing an example of a method for measuring a 3-group nitride semiconductor light-emitting structure or light-emitting element in a wafer state presented in Figures 52 to 57.
Fig. 65 is a drawing showing the actual measurement process of Fig. 64.
Figures 66 to 68 are drawings showing another example of measurement results according to the present disclosure;
FIG. 69 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 70 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure;
FIG. 71 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure.

The present disclosure will now be described in detail with reference to the accompanying drawing(s).

FIG. 2 is a drawing showing an example of a III-nitride semiconductor light-emitting device according to the present disclosure, wherein the semiconductor light-emitting device includes a growth substrate (10), a buffer region (20), an n-side contact region (30), a superlattice region (31), a semiconductor light-emitting structure or active region (42), an electron blocking layer (51; EBL), a p-side contact region (52), a current spreading electrode (60), a first electrode (70), and a second electrode (80).

The growth substrate (10) may be a sapphire substrate, a Si (111) substrate, etc., and in particular, a patterned C-face sapphire substrate (C-face PSS) may be applied, and is not particularly limited to a homogeneous substrate or a heterogeneous substrate.

The buffer region (20) can be formed of un-doped GaN formed on a seed layer, and growth conditions (based on the MOVCD method) can include a temperature of 950°C to 1100°C, a thickness of 1 to 4 μm, a pressure of 100 to 400 mbar, and an _H2 atmosphere.

The n-side contact region (30) can be made of Si-doped GaN, and growth conditions can include a temperature of 1000°C to 1100°C, a thickness of 1 to 4 μm, a pressure of 100 to 400 mbar, and an _H2 atmosphere.

The superlattice region (31) is a superlattice structure in which In _a Ga _1-a N/In _b Ga _1-b N (0<a<1, 0≤b<1, a>b) is repeatedly laminated for 15 periods using general growth conditions to improve current diffusion. The addition of Al is not excluded, and it may be doped with an n-type dopant (e.g., Si), and it is of course possible for the composition to change slightly during the repetition process.

The electron blocking layer (51) can be made of Mg-doped AlGaN, and growth conditions can include a temperature of 900°C, a thickness of 10 to 40 nm, a pressure of 50 to 100 mbar, and an H ₂ atmosphere.

The p-side contact region (52) can also be formed of Mg-doped GaN using general growth conditions.

A TCO (Tranparent Conductive Oxide) such as ITO can be used as the current spreading electrode (60), but is not limited thereto.

Cr/Ni/Au can be used as the first electrode (70) and the second electrode (80).

The structure used in the example presented in Fig. 2 is a very common structure used in the past to make a semiconductor light-emitting device that emits blue and green using a III-nitride semiconductor, and any structure used in a III-nitride semiconductor light-emitting device that emits blue and green can be used without any special limitations. Although the presented form is a lateral chip form, it goes without saying that a flip-chip form and a vertical chip form can be used. Although the light-emitting device in the presented example has a chip form, it goes without saying that it can be in a wafer state.

FIG. 3 is a drawing showing an example of a semiconductor light-emitting structure according to the present disclosure, wherein FIG. 3(a) shows a conventional green light-emitting III-nitride semiconductor light-emitting structure, and FIG. 3(b) shows a III-nitride semiconductor light-emitting structure according to the present disclosure. For explanation, two quantum wells are shown.

The semiconductor light-emitting structure presented in Fig. 3(a) uses a quantum well (QW) made of In _c Ga _1-c N and a barrier layer (barrier) made of Al _d Ga _e In _1-de N (0≤d≤1, 0≤e≤1; e.g., GaN). The In content c can vary depending on the peak wavelength at which the semiconductor light-emitting structure emits light, and when emitting blue light, c can have a value of 0.1, and when emitting green light, c can have a value of 0.2. InGaN, AlGaN, AlGaInN, etc. can be used as the barrier layer, but GaN is generally used.

The semiconductor light-emitting structure according to the present disclosure shows that it is possible to emit long-wavelength light by introducing a barrier layer structure, such as that illustrated in FIG. 3(b), to the semiconductor light-emitting structure illustrated in FIG. 3(a), which has already been commercialized and stably implemented. Therefore, by utilizing the semiconductor light-emitting structure according to the present disclosure, it is possible to overcome the problems when utilizing the InGaN active region containing a large amount of In illustrated in FIG. 1, and also to overcome the problems occurring during the driving process of the manufactured semiconductor light-emitting device.

1st(x), 2nd(x) 1st(x), 2nd(o) 1st(o), 2nd(x) 1st(o), 2nd(o) Wavelength (Wp,nm) 530 (green) 560 580 625 (red) Light quantity (qualitative evaluation) Brightness weakness commonly commonly

As shown in Table 1, ① in the case where neither the first layer (1) nor the second layer (2) according to the present disclosure was provided on both sides of the quantum well, light with a wavelength of 530 nm was brightly emitted, ② in the case where only the second layer (2) according to the present disclosure was provided on the quantum well, light with a wavelength of 560 nm was weakly emitted, ③ in the case where only the first layer (1) according to the present disclosure was provided on the quantum well, light with a wavelength of 580 nm was normally emitted, and ④ in the case where both the first layer (1) and the second layer (2) according to the present disclosure were provided on both sides of the quantum well, light with a wavelength of 625 nm was normally emitted.

FIG. 4 is a diagram showing another example of a semiconductor light-emitting structure according to the present disclosure, wherein FIG. 4(a) shows an example in which In is supplied uniformly in the process of forming a quantum well, and FIG. 4(b) shows an example in which In is supplied in a graded (decreasing and then increasing) distribution in the process of forming a quantum well. When the same total amount of In was supplied to each quantum well, the example presented in FIG. 4(b) showed brighter light.

FIG. 5 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure. It was confirmed that the light-emitting wavelength of the semiconductor light-emitting structure can be lengthened by changing the material composition of the last barrier (the barrier located closest to the p-side in the semiconductor light-emitting structure) from GaN to a material having a lower band gap energy than GaN (e.g., InGaN). For example, when the ratio of In/(In+Ga) was appropriately adjusted (e.g., 0.05, 0.10; here, the ratio is the molecular number ratio between the MO sources (TEGa (TriEthyl Ga), TMIn (TriMethyl In), TMAl (TriMethyl Al)) in the gas phase during growth), it was confirmed that the semiconductor light-emitting structure emitting with a wavelength of 625 nm was changed to a semiconductor light-emitting structure emitting with a wavelength of 635 nm.

FIG. 6 is a drawing showing an example of an experimental result according to the present disclosure, in which the upper left has neither the first layer (1) nor the second layer (2) (green), the upper middle has only the second layer (2) (yellow), the upper right has only the first layer (1) (orange), the lower left has both the first layer (1) and the second layer (2) (red), the lower middle has the example presented in FIG. 5 (more red), and the lower right has Al _f Ga _1-f N having an Al/(Al+Ga) ratio of 0.95 used for the first layer (1) and the second layer (2) (blue).

A GaN barrier layer (4 nm) and an In _c Ga _1-c N well layer (2.5 nm) with an In/(In+Ga) ratio of 0.56 were used in the experiment. Specifically, two quantum wells were used, and a conventional structure of GaN barrier layer (4 nm)-In _c Ga _1-c N well layer (2.5 nm)-GaN barrier layer (4 nm)-In _c Ga _1-c N well layer (2.5 nm)-GaN barrier layer (8 nm) was used. Due to experimental constraints, 1 to 4 quantum wells were used, and there was no significant change in the optical characteristics. Al _f Ga _1-f N (2 nm) with an Al/(Al+Ga) ratio of 0.85 was used as the first layer (1) and the second layer (2).

The quantum well layer was grown to a thickness of 2.5 nm using TMGa and TMIn at a temperature of 670°C, and the barrier layer was grown to a thickness of 4 nm using GaN at a temperature of 770°C. The first layer (1) located first on the n-side was grown to a thickness of approximately 2 nm using TMAl and TMGa under the same conditions as the first barrier layer immediately after the growth of the first barrier layer (the first barrier layer located on the n-side) and Al _f Ga _1-f N having an Al/(Al+Ga) ratio of 0.85 (these collectively form a barrier layer). Immediately after the growth of the first quantum well (the first well layer located on the n-side), the second layer (2) located on the n-side was grown to a thickness of 0.3 nm using TMGa and TMAl while increasing the temperature for 50 s, and thereafter, the remaining 1.7 nm was grown under the same growth conditions as the barrier layer, and a GaN barrier layer was grown. The first layer (1) and the second layer (2) located on the p side were also grown in the same manner, and when both the first layer (1) and the second layer (2) are provided, the semiconductor light-emitting structure (42) has the structure of the last GaN (1.5 nm)-GaN barrier layer (4 nm)-Al _f Ga _1-f N (2 nm) first layer (1)-In _c Ga _1-c N well layer (2.5 nm)-Al _f Ga _1-f N (2 nm) second layer (2)-GaN barrier layer (4 nm)-A _f Ga _1-f N (2 nm) first layer (1)-In _c Ga _1-c N well layer (2.5 nm)-Al _f Ga _1-f N (2 nm) second layer (2)-GaN barrier layer (8 nm)-electron blocking layer (51) of the superlattice region (31). In the case of the semiconductor light-emitting structure presented in Fig. 5, the last barrier layer (the barrier layer adjacent to the electron blocking layer (51)) may have a structure of In _g Ga _1-g N barrier layer (4 nm)-GaN barrier layer (4 nm).

As illustrated in FIG. 6, it can be seen that the emission wavelength can be shifted to a longer side by introducing the first layer (1) and/or the second layer (2) in a given semiconductor light-emitting structure. However, as presented in the lower right of FIG. 6, it can be seen that this phenomenon is that when the Al concentration of the first layer (1) and the second layer (2) passes the critical point, the wavelength shifts to a shorter side than the wavelength at which the original semiconductor light-emitting structure emitted light.

Table 2 summarizes an example of growth conditions of the superlattice region (31) previously used. As described above, in the present disclosure, the composition is expressed as a molecular ratio between MO sources (TEGa (TriEthyl Ga), TMIn (TriMethyl In), TMAl (TriMethyl Al)) in a gaseous state during growth.

Growth temperature furtherance thickness In _a Ga _1-a N (superlattice region (31)) 720℃ In/(In+Ga) = 0.55 1.5nm In _b Ga _1-b N (superlattice region (31)) 780℃ b = 0 (GaN) 1.5nm

Here, the superlattice region (31) can be doped, and can be doped entirely or partially. For example, only the barrier layer In _b Ga _1-b N (superlattice region (31)) can be doped with Si to about 5x10 ¹⁸ /cm ³ , or only the even-numbered barrier layers can be doped, or only the odd-numbered barrier layers can be doped.

Table 3 summarizes an example of growth conditions for a semiconductor light-emitting structure or active region (42) that was previously used.

Growth temperature furtherance thickness Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 8nm

Table 4 summarizes an example of growth conditions used in a semiconductor light-emitting structure or active region (42) according to the present disclosure.

Growth temperature furtherance thickness Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (1) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 8nm

Table 5 summarizes an example of growth conditions used in the semiconductor light-emitting structure or active region (42) according to FIG. 5.

Growth temperature furtherance thickness Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (1) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm In _g Ga _1-g N barrier layer (semiconductor light-emitting structure (42)) 770℃ In/(In+Ga) = 0.01 4nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42 770℃ d = 0, e = 1 (GaN) 4nm

Fig. 7 is a drawing showing another example of the experimental results according to the present disclosure, showing the change in luminescence wavelength according to the composition of Al. On the left, luminescence (yellow) was observed when the ratio of Al/(Al+Ga) was 0.25, in the middle, luminescence (red) was observed when the ratio of Al/(Al+Ga) was 0.75, and on the right, luminescence (blue) was observed when the ratio of Al/(Al+Ga) was 0.95. Based on the semiconductor luminescence structure used in the experiment of Fig. 6, a significant change in wavelength was induced when the Al composition was 20% or higher, and it can be seen that the wavelength shows a change where it becomes shorter again at some value of Al 90% or higher.

Fig. 8 is a drawing showing another example of experimental results according to the present disclosure, showing changes in light quantity according to changes in the thickness of the first layer (1) and the second layer (2). When using the structure presented in Fig. 6, it can be seen that the maximum value is shown around 2 nm, and the value drops sharply when it becomes 5 nm, and a value of 0.5-4 nm can be used.

Fig. 9 is a drawing showing another example of experimental results according to the present disclosure, showing the result when using the semiconductor light-emitting structure shown in Fig. 4(a) on the left, and the result when using the semiconductor light-emitting structure shown in Fig. 4(b) on the right. It can be seen that the example on the right is brighter and has a redder color.

Fig. 10 is a diagram showing another example of the experimental results according to the present disclosure, in which the degree of wavelength change according to the current is confirmed. Unlike the existing InGaN red LED using a large amount of In (the wavelength shortens rapidly as the current increases), it can be seen that the wavelength shift is small even when the current increases.

FIG. 11 is a drawing explaining a semiconductor light-emitting device related to the present disclosure from the perspective of band gap energy, where (a) shows a conventional semiconductor light-emitting device, (b) shows a semiconductor light-emitting device presented in FIG. 2, and (c) shows a semiconductor light-emitting device in which a barrier layer form of a semiconductor light-emitting structure (42) is applied to a superlattice region (31) in the structure presented in (b).

Table 6 summarizes an example of the growth conditions used for the semiconductor light-emitting device shown in Fig. 11(c).

Growth temperature furtherance thickness Al _g Ga _1-g N 3rd layer (3) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _a Ga _1-a N (superlattice region (31)) 720℃ In/(In+Ga) = 0.55 1.5nm Al _g Ga _1-g N 4th layer (4)) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _b Ga _1-b N (superlattice region (31)) 780℃ b = 0 (GaN) 1.5nm : : : : <<15 cycles>> : : : : Al _g Ga _1-g N 3rd layer (3) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _a Ga _1-a N (superlattice region (31)) 720℃ In/(In+Ga) = 0.55 1.5nm Al _g Ga _1-g N 4th layer (4)) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _b Ga _1-b N (superlattice region (31)) 780℃ b = 0 (GaN) 1.5nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (1) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 670℃ In/(In+Ga) = 0.56 2.5nm Al _f Ga _1-f N 2nd layer (2) 770℃ Al/(Al+Ga) = 0.85 2nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 770℃ d = 0, e = 1 (GaN) 8nm

FIG. 12 and FIG. 14 are drawings showing further examples of experimental results according to the present disclosure, wherein FIG. 12 is a drawing showing the experimental results for the semiconductor light-emitting device shown in FIG. 11(c), which is the result when all growth conditions except for the superlattice region (31) in the semiconductor light-emitting device shown in FIG. 11(b) are kept the same, and, similar to the device shown on the right side of FIG. 7, the result was shown in which the wavelength shifted to a shorter wavelength again. It is judged that this is because the superlattice region (31) shown in FIG. 11(c), that is, the third layer (3) and fourth layer (4) structures introduced into the superlattice region (31), play a role in increasing the amount of In injected into the well layer of the semiconductor light-emitting structure (42). Here, when the ratio of Al/(Al+Ga) used in the first layer (1) and the second layer (2) was lowered from 0.85 to 0.45, it was confirmed that red light (emission wavelength of 635 nm) was emitted more than twice as much as the semiconductor light-emitting element shown in Fig. 11(b), as shown in Fig. 13. Fig. 14 shows the PL measurement results of the superlattice region (31) according to the presence or absence of the third layer (3) and the fourth layer (4), and shows that the PL peak shifted significantly from 445 nm to 535 nm on the long-wavelength side when the third layer (3) and the fourth layer (4) were provided.

Table 7 shows an example of growth conditions in which the active region (42) of the quantum well structure in the semiconductor light-emitting device presented in Fig. 11(c) is changed to a semiconductor light-emitting region or active region (42) of the superlattice structure, similar to the superlattice region (31). Fig. 15 is a drawing comparing the active region of the quantum well structure and the active region of the superlattice structure. In the active region of the quantum well structure shown on the left, each quantum well forms an isolated band due to a thick barrier layer (barrier) and independently emits light through electron-hole recombination, but in the active region of the superlattice structure shown on the right, that is, when the barrier layer (barrier) becomes sufficiently thin, each well is not isolated but forms a miniband and emits light through a miniband transition. The active region of the superlattice structure is a technology that is not generally used in III-nitride semiconductor light-emitting devices, but it has been found to be very effective when applied to the semiconductor light-emitting structure according to the present disclosure (see FIG. 16). The active region (42) was configured in the same manner as the superlattice region (31), except that 8 periods were applied, no doping was performed, the growth temperature of the well layer was 700°C, the growth temperatures of the remaining layers were 780°C, the thicknesses of the first layer (1) and the second layer (2) were 0.8 nm, the thickness of the Al _d Ga _e In _1-de N barrier layer (d = 0, e = 1 (GaN)) was 1.5 nm, the ratio of In/(In+Ga) of the well layer was 0.55, the ratio of Al/(Al+Ga) of the first layer (1) and the second layer (2) was 0.50, and the thickness of the well layer was 1.5 nm.

Growth temperature furtherance thickness Al _g Ga _1-g N 3rd layer (3) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _a Ga _1-a N (superlattice region (31)) 720℃ In/(In+Ga) = 0.55 1.5nm Al _g Ga _1-g N 4th layer (4)) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _b Ga _1-b N (superlattice region (31)) 780℃ b = 0 (GaN) 1.5nm : : : : <<15 cycles>> : : : : Al _g Ga _1-g N 3rd layer (3) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _a Ga _1-a N (superlattice region (31)) 720℃ In/(In+Ga) = 0.55 1.5nm Al _g Ga _1-g N 4th layer (4)) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _b Ga _1-b N (superlattice region (31)) 780℃ b = 0 (GaN) 1.5nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 780℃ d = 0, e = 1 (GaN) 4nm Al _f Ga _1-f N 1st layer (1) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 700℃ In/(In+Ga) = 0.55 1.5nm Al _f Ga _1-f N 2nd layer (2) 780℃ Al/(Al+Ga) = 0.50 0.8nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 780℃ d = 0, e = 1 (GaN) 1.5nm : : : : <<8 cycles>> : : : : Al _f Ga _1-f N 1st layer (1) 780℃ Al/(Al+Ga) = 0.50 0.8nm In _c Ga _1-c N well layer (semiconductor light-emitting structure (42)) 700℃ In/(In+Ga) = 0.55 1.5nm Al _f Ga _1-f N 2nd layer (2) 780℃ Al/(Al+Ga) = 0.50 0.8nm Al _d Ga _e In _1-de N barrier layer (semiconductor light-emitting structure (42)) 780℃ d = 0, e = 1 (GaN) 8nm

Figure 16 is a drawing showing an example of an experimental result according to the semiconductor light-emitting structure presented in Table 7, and it was confirmed that there was a 7-fold increase in output compared to the example presented in Table 6.

FIG. 17 is a diagram explaining various examples of semiconductor light-emitting structures to which a superlattice structure is applied. In (a), the semiconductor light-emitting device presented in Table 7 is presented in terms of band gap energy, and in (b) a semiconductor light-emitting device is presented in which the layers located on the p-side of the superlattice region (31) and the semiconductor light-emitting structure (42), that is, the second layer (2) and the fourth layer (4), are removed. The semiconductor light-emitting device presented in FIG. 17(b) also showed experimental results similar to those of the semiconductor light-emitting device presented in FIG. 17(a). The growth conditions were all the same, but the ratio of Al/(Al+Ga) of the first layer (1) was changed from 0.50 to 0.65.

Meanwhile, in the semiconductor light-emitting device shown in Fig. 17(b), when the thickness of the Al _d Ga _e In _1-de N barrier layer (d = 0, e = 1 (GaN)) of the semiconductor light-emitting structure (42) was changed from 1.5 nm to 1 nm, the emission wavelength shifted from 630 nm to 640 nm toward the long wavelength side.

In addition, in the semiconductor light-emitting device shown in Fig. 17(b), when the repetition period of the semiconductor light-emitting structure (42) was changed from 8 cycles to 16 cycles, the emission wavelength was shortened to 625 nm, and the light quantity was similar.

In addition, in the semiconductor light-emitting device shown in Fig. 17(b), when the thickness of the Al _d Ga _e In _1-de N barrier layer (d = 0, e = 1 (GaN)) of the semiconductor light-emitting structure (42) was changed from 1.5 nm to 0.75 nm, the thickness of the first layer (1) was changed from 0.8 nm to 0.4 nm, and the thickness of the well layer was reduced from 1.5 nm to 0.75 nm, the wavelength decreased from 630 nm to 600 nm, and the light quantity decreased by more than 50%.

Also, in the semiconductor light-emitting device shown in Fig. 17(b), when the thickness of the Al _d Ga _e In _1-de N barrier layer (d = 0, e = 1 (GaN)) of the semiconductor light-emitting structure (42) was changed from 1.5 nm to 1.0 nm, the thickness of the first layer (1) was kept at 0.8 nm, and the thickness of the well layer was increased from 1.5 nm to 2.0 nm, the wavelength significantly increased from 630 nm to 680 nm, and the light quantity decreased by about 50%. Under these conditions, the growth temperature was changed to a higher side so that the emission wavelength could be 630 nm, and the light quantity increased by 20% compared to the semiconductor light-emitting device shown in Fig. 17(b).

Of course, it is possible to make changes, such as adding a dopant to each layer constituting the superlattice region (31) and the semiconductor light-emitting structure (42), adding Al, In, or Ga, or slightly changing the composition and growth conditions during the repeat process.

FIG. 18 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure, which is different from the semiconductor light-emitting structure shown in FIG. 2 in that it has a plurality of superlattice regions (33, 34, 35), and in the shown example, an active region (42) of a superlattice structure is used. A lateral growth enhancement layer (36) is provided between the superlattice region (33) and the superlattice region (34), and a lateral growth enhancement layer (37) is provided between the superlattice region (34) and the superlattice region (35).

The superlattice region (33, 34, 35) can be formed of a sequential repeating stack of AlGaN-InGaN-GaN, a sequential repeating stack of GaN-InGaN-AlGaN, a sequential repeating stack of GaN-AlGaN-InGaN-AlGaN, or a sequential repeating stack of AlGaN-InGaN, and it is sufficient for an AlGaN-InGaN interface to exist within the superlattice region (33, 34, 35), and the AlInGaN is formed by diffusion or intentionally. In conventional III-nitride semiconductor light-emitting devices, the superlattice region is mainly used to reduce the energy band gap difference between the n-side contact region (30; e.g., GaN) and the active region including InGaN. However, in the present disclosure, the superlattice region (33, 34, 35) is used in addition to this function to allow a lot of In to enter the active region (42). That is, since GaN and InGaN have a large difference in lattice constants, In does not enter the active region well. However, by increasing the In content through the superlattice region (33, 34, 35), In can be more efficiently entered into the active region (42). For reference, by introducing In into the superlattice region (33), the superlattice region (34) can introduce more In even when the same growth conditions as the superlattice region (33) are used, and the same applies to the superlattice region (35).

The superlattice regions (33, 34, 35) formed in this way are not formed with a flat surface due to the AlGaN-InGaN interface, but are formed with a rough surface (S) as illustrated in FIGS. 19 to 21. Since the continuous accumulation of the rough surface (S) of the superlattice region (33) can increase the crystal defects of the device, a lateral growth enhancement layer (36) is introduced to perform a planarization operation, and a superlattice region (34) is introduced again to facilitate the injection of In into the active region (42), while a lateral growth enhancement layer (37) is introduced again to eliminate the crystal defects. The number of superlattice regions (33, 34, 35) may be one or more, and there is no restriction on the upper limit. However, as illustrated in FIG. 21, it is more preferable not to introduce a lateral growth enhancement layer between the active region (42) and the superlattice region (35) closest thereto. The rough surface (S) is formed by a semi-polar facet. For example, when the growth substrate (10) is a C-plane sapphire substrate, a flat III-nitride semiconductor grown thereon has a polar facet that grows along the c-axis, but the three-dimensional facet forming the rough surface (S) forms a semi-polar facet. In the case of a polar facet, although it is easy to inject In, it has a disadvantage of a large piezoelectric constant (when the piezoelectric constant is large, the wavelength can shift significantly toward a short wavelength as the current density increases), and in the case of a non-polar facet, although the piezoelectric constant is 0, it has a disadvantage of being difficult to inject In. In the present disclosure, by growing an active region (42) on the rough surface (S), i.e., the semi-polar facet, it is possible to easily inject In and have an appropriate piezoelectric constant. As shown in Fig. 21, the last barrier layer of the active region (42), i.e., the last barrier (44), can be grown flatly by controlling the growth conditions, or it can be grown to have a shape that follows the rough surface (S).

Table 8 shows an example of the growth conditions of the semiconductor light-emitting structure presented in Fig. 18.

Growth temperature (℃) furtherance Thickness (nm) GaN (superlattice region (33)) 830 1.5 In _x Ga _1-x N (superlattice region (33)) 730 x=0.1 1.5 Al _y Ga _1-y N (superlattice region (33)) 780 y=0.5 0.5 : : : : <<10 cycles>> : : : : GaN (lateral growth enhanced layer (36)) 830 100 GaN (superlattice region (34)) 830 1.5 In _x Ga _1-x N (superlattice region (34)) 730 x=0.1 1.5 Al _y Ga _1-y N (superlattice region (34)) 780 y=0.5 0.5 : : : : <<10 cycles>> : : : : GaN (lateral growth enhanced layer (37)) 830 100 Al _y Ga _1-y N (superlattice region (35)) 780 y=0.5 0.5 In _x Ga _1-x N (superlattice region (35)) 730 x=0.1 1.5 GaN (superlattice region (35)) 830 1.5 : : : : <<10th cycle>> : : : : In _x Ga _1-x N (active region (42)) 710 x=0.35 2.2 In _x Ga _1-x N (active region (42)) 760 x=0.05 0.4 Al _y Ga _1-y N (active region (42)) 760 y=0.1 0.8 In _x Ga _1-x N (active region (42)) 760 x=0.05 0.4 : <<3rd cycle>> : Al _y Ga _1-y N (Last Barrier (44))
GaN (Last Barrier (44))
In _x Ga _1-x N(Last Barrier (44)) 760
760
760 y=0.05

x=0.05 6
6
6 Al _y Ga _1-xy In _x N (electron blocking layer (51)) 820 x=.0.1,y=0.2 20 p-GaN (p-side contact area (52)) 900 200

The thickness of the lateral growth enhancement layer (36, 37) is sufficient to be grown to a level that can cover the rough surface (S), and there is no upper limit thereto. However, if it becomes too thick (e.g., 500 nm), there is a concern that the function of the superlattice region (33, 34) will be significantly reduced as the thick GaN layer is positioned before the active region (42).

Here, the composition of In, Al, and Ga used was the predicted value in the solid state after the growth was completed, unlike the previous examples. For reference, even with the same In _x Ga _1-x N (x = 0.1), the actual indium content may increase as the growth progresses, and it should be noted that the thicker the InGaN, the more In can be incorporated as the growth progresses.

The last barrier (44) was tested with Al _y Ga _1-y N (44; y = 0.05), GaN (44), and In _x Ga _1-x N (44; x = 0.05), respectively, and the best light output was shown when Al _y Ga _1-y N (44; y = 0.05). Also, in a general LED device, when Al is added to the last barrier (44), a short wavelength transition is shown, and when In is added, a long wavelength transition is shown. In the device presented in this example, a long wavelength transition is shown when Al is added, and a short wavelength transition is shown when In is added. It can be seen that a desired red light wavelength can be obtained by controlling the content of Al and the content of In, and a behavior opposite to the conventional understanding was utilized, which is presumed to be due to the strain effect. In the active region (42) presented in Table 8, the last In _0.05 Ga _0.95 N (0.4 nm)-Al _0.1 Ga _0.9 N (0.8 nm)-In _0.05 Ga _0.95 N (0.4 nm) of the third period is omitted, and Al _0.05 Ga _0.95 N (last barrier (44)); It is also possible to form In _0.05 Ga 0.95 N (0.4 nm), GaN (last barrier (44); 6 nm), or In _x Ga _1-x N (last barrier (44); 6 nm), and the effect was better when the last barrier (44) was composed of only Al _0.05 Ga _0.95 N (6 nm) than when it was composed of In 0.05 Ga _0.95 N (0.4 _{nm )} -Al _0.1 Ga _0.9 N (0.8 nm)-In _0.05 Ga _0.95 N (0.4 nm)-Al 0.05 Ga _0.95 N (6 nm), and when it was composed of In _0.05 Ga 0.95 N (0.4 nm)-Al _0.1 Ga _0.9 N (0.8 nm)-In _0.05 Ga _0.95 N (0.4 nm)-In _0.05 Ga _0.95 N (6 nm), In _0.05 Ga The effect was better than when composed of only _0.95 N (6 nm), and the side using Al _0.05 Ga _0.95 N (6 nm) was better than when using In _0.05 Ga _0.95 N (6 nm) and GaN (6 nm) (see Fig. 23).

The thickness (2.2 nm) of the In x Ga 1-x N (active region (42); x=0.35), which is the region corresponding to the well layer within the active region (42) (although the presented example is a form in which the active region (42) has a superlattice structure to form a _mini -band, the expressions well layer and barrier layer used in the quantum well _{structure are used for convenience.) is thicker than the thickness (1.6 nm=0.4 nm+0.8 nm+0.4 nm) of the region In x Ga 1-x} N (active region (42); x=0.05)-Al _y Ga _1-y N (active region (42); y=0.1)-In _x Ga _1-x N (active region (42); x=0.05) corresponding to the barrier layer. It was also confirmed that as the thickness of the barrier layer in the active region (42) becomes thinner and as the thickness of the well layer becomes thicker, the wavelength shifts to a longer wavelength (see FIG. 24).

In addition, as presented, an increase in efficiency was shown by using a barrier layer of the form of InGaN-AlGaN-InGaN instead of using a single GaN barrier (see Fig. 25).

In addition, after the growth of the last barrier (44), the electron blocking layer (51) was grown with AlInGaN instead of AlGaN, and the efficiency was shown to increase by 10% as it moved to a long wavelength (see Fig. 26).

FIG. 22 is a drawing showing another example of a semiconductor light-emitting structure according to the present disclosure, in which, unlike the semiconductor light-emitting device shown in FIG. 18, the superlattice regions (33, 34) are replaced with strain control regions (38, 39). In general, a superlattice structure refers to a structure in which two or more layers having different band gaps are alternately grown, each having a thickness of several nm, and in which tunneling occurs to form mini-bands.

Table 9 shows an example of the growth conditions of the semiconductor light-emitting structure presented in Fig. 22.

Growth temperature (℃) furtherance Thickness (nm) GaN (area (38)) 870 15 In _x Ga _1-x N (superlattice region (38)) 770 x=0.05 30 Al _y Ga _1-y N (superlattice region (38)) 870 y=0.2 5 : : : : <<10 cycles>> : : : : GaN (lateral growth enhanced layer (36)) 1000 45 GaN (superlattice region (39)) 870 15 In _x Ga _1-x N (superlattice region (39)) 770 x=0.05 30 Al _y Ga _1-y N (superlattice region (39)) 870 y=0.2 5 : : : : <<10 cycles>> : : : : GaN (lateral growth enhanced layer (37)) 1000 45 Al _y Ga _1-y N (superlattice region (35)) 780 y=0.5 0.5 In _x Ga _1-x N (superlattice region (35)) 730 x=0.1 1.5 GaN (superlattice region (35)) 830 1.5 : : : : <<10th cycle>> : : : : In _x Ga _1-x N (active region (42)) 710 x=0.35 2.2 In _x Ga _1-x N (active region (42)) 760 x=0.05 0.4 Al _y Ga _1-y N (active region (42)) 760 y=0.1 0.8 In _x Ga _1-x N (active region (42)) 760 x=0.05 0.4 : <<3rd cycle>> : Al _y Ga _1-y N (Last Barrier (44))
GaN (Last Barrier (44))
In _x Ga _1-x N(Last Barrier (44)) 760
760
760 y=0.05

x=0.05 6
6
6 Al _y Ga _1-xy In _x N (electron blocking layer (51)) 820 x=.0.1,y=0.2 20 p-GaN (p-side contact area (52)) 900 200

In order to emit red light, a relatively high In content is required in the active region (42). However, in cases where it is not easy to overcome crystal defects caused by a sharp lattice constant difference between the n-side semiconductor region (30) and the active region (42) with only the superlattice region, this problem can be solved by introducing one or more strain control regions (38, 39).

The strain control region (38, 39) was grown in a hydrogen atmosphere, and the superlattice region (35) and subsequent regions were grown in a nitrogen atmosphere. By growing in a hydrogen atmosphere, the growth rate of the strain control region (38, 39) can be improved.

In the strain control region (38,39), the thickness of In _x Ga _1-x N is set to several tens nm (e.g., 30 nm), the composition x can be set to 0<x<0.3, the GaN layer can have a thickness of 10 nm to 200 nm, and the y of the Al _y Ga _1-y N layer can be set to 0.01<y<0.9 and the thickness can be 1 to 20 nm. It is desirable that the growth temperature difference (delta T) between In _x Ga _1-x N and GaN be at least 20 degrees. The growth temperature of GaN is set to be higher than that of In _x Ga _1-x N.

Compared to the example presented in Table 8, the thickness of the lateral growth enhanced layer (36) was reduced from 100 nm to 45 nm, and when the degree of rough surface (S) is less than that of the example presented in Table 8, the lateral growth enhanced layer (36) can be formed with a thickness of 50 nm or less.

FIG. 27 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure. Unlike the examples presented in FIGS. 1, 2, 18, and 22, a growth-prevention film (21; for example, SiO ₂ ) is provided on a growth substrate (10), and a semiconductor light-emitting portion (A; 20, 30, 42, 50) is grown from a growth substrate (10) exposed through an opening (21) formed in the growth-prevention film (21). In this selective growth (Selective Expitaxy), the growth speed of the semiconductor light-emitting portion (A) can be controlled by controlling the size of the opening (22), that is, the size of the pattern. If the size of the opening (22) is made smaller, the growth speed becomes faster, and the thickness of the semiconductor light-emitting portion (A) being grown becomes thicker. Accordingly, the active region (42) also becomes thicker, which not only has the Quantum Confinement Effect, but also increases the amount of In injected, thereby emitting longer-wavelength light. It goes without saying that when an InGaN layer is provided under the active region (42), the In content of this layer can be increased. As examples of the semiconductor light-emitting portion (A), a buffer region (20), an n-side contact region (30), an active region (42), and a p-side region (50) are presented, but various structures described above can be applied, and can also be applied to semiconductor light-emitting portion structures presented in the past.

FIG. 28 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, in which, unlike the example shown in FIG. 27, a buffer region (20) is provided under a growth-prevention film (21). Various examples of such a structure are presented in the applicant's International Publication No. WO/2019/199144.

FIG. 29 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, and unlike the example presented in FIG. 28, an example is presented in which a growth-prevention film (21) is omitted, a part of a buffer region (20) is etched so that no growth occurs in the etched region (E), so that the etched region (E) replaces the growth-prevention film (21) and allows selective growth of a semiconductor light-emitting portion (A). At this time, it is possible to control the emission wavelength of the active region (42) by controlling the size of the upper surface of the etched remaining buffer region (20) or the size of the etched region (E). The growth-prevention film (21) and the etched region (E) presented in FIG. 28 are collectively referred to as growth-prevention regions (21, E), and if the growth-prevention film (21) can be applied in the present disclosure, it can be replaced with the etched region (E). It goes without saying that an n-side contact region (30) can be grown on top of a buffer region (20) and etched to create an etched region (E).

FIG. 30 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, in which, unlike the example shown in FIG. 28, a buffer region (20) and an n-side contact region (30) are provided under a growth prevention film (21).

FIG. 31 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, and unlike the example presented in FIG. 28, the growth-prevention film (21) is provided with openings (22, 23, 24) each having a different size. The semiconductor light-emitting portions (A, B, C) grown in each of the openings (22, 23, 24) are grown under one growth condition but have different thicknesses and In contents of the active region (42), and thus emit light of different wavelengths. For example, the semiconductor light-emitting portion (A) grown in the smallest opening (22) can be designed to emit light of the longest wavelength (e.g., red), the semiconductor light-emitting portion (C) grown in the largest opening (24) can emit light of the shortest wavelength (e.g., blue), and the semiconductor light-emitting portion (B) grown in the middle-sized opening (23) can be designed to emit light of the middle wavelength (e.g., green). It goes without saying that the form presented in FIG. 28 can be used.

FIG. 32 is a drawing showing an example of the aperture pattern presented in FIG. 31, in which the smallest apertures (22) are arranged in the same area in large numbers (e.g., 6), the largest apertures (24) are arranged in the same area in the smallest numbers (e.g., 1), and the middle-sized apertures (23) are arranged in the same area in an intermediate number (e.g., 4), so that the light amount of the semiconductor light-emitting portions (A, B, C) formed thereon can be controlled.

FIG. 33 is a drawing showing another example of the arrangement of the openings of the growth-barrier film according to the present disclosure, in which the openings (22) of the growth-barrier film (21) are arranged at narrow intervals on the left, and the openings (22) of the growth-barrier film (21) are arranged at wide intervals on the right. The sizes of the openings (22) are the same. Under given growth conditions, if the interval between the openings (22) is widened, the source supply to each opening (22) is more sufficient, so that the thickness and the In content can be sufficiently achieved. It goes without saying that the effect described in FIG. 31 can be achieved by applying various intervals between the openings (22) to one growth-barrier film (21). The same principle applies when the openings (22) are replaced with the etched remaining area (see FIG. 28). In the present disclosure, the adjustment of the size and interval of the growth-barrier region (22, E) is collectively referred to as the pattern adjustment of the growth-barrier region (22, E).

FIGS. 34 to 36 are drawings showing an example of a method for manufacturing a semiconductor light-emitting device according to the present disclosure. As shown in FIG. 34, an active region (42) and a p-side region (50) of a semiconductor light-emitting portion (C) are grown without forming a growth-prevention film (21) on an n-side contact region (30). Next, as shown in FIG. 35, a portion of the active region (42) and the p-side region (50) of the semiconductor light-emitting portion (C) is removed through etching, thereby exposing the n-side contact region (30). Finally, as shown in FIG. 36, a growth-prevention film (21) is formed, an opening (22) and an opening (23) are formed, and then a semiconductor light-emitting portion (A; 42, 50) and a semiconductor light-emitting portion (B; 42, 50) are formed through one growth process. This growth condition can be adjusted so that the active region (42) of the semiconductor light-emitting portion (A) grown in the opening (22) emits red light, and the size of the opening (23) can be adjusted so that the semiconductor light-emitting portion (B) emits green light. Since there is a large difference in wavelength between red and blue, the semiconductor light-emitting portion (C) emitting blue light can be formed by pre-growing and then etching, rather than using selective growth. In addition, it has the advantage of being able to control the size of the semiconductor light-emitting portion (C) regardless of the emission color. Of course, the active region (42) and the p-side region (50) of the semiconductor light-emitting portion (A) can be grown first, or the active region (42) and the p-side region (50) of the semiconductor light-emitting portion (B) can be grown first.

FIGS. 37 to 40 are diagrams showing still another example of a method for manufacturing a semiconductor light-emitting device according to the present disclosure. As shown in FIG. 37, a growth-prevention film (21) is formed in the state shown in FIG. 35, and a semiconductor light-emitting portion (A; 42, 50) is grown in an n-side contact region (30). Next, as shown in FIG. 38, an etching mask (25) is formed, and as shown in FIG. 39, a semiconductor light-emitting portion (A; 42, 50) is left with a predetermined size, while a part thereof is left as a nanowire structure (N). Finally, as shown in FIG. 40, a cladding region (26; e.g., SiO ₂ ) is formed in the nanowire structure (N) to form a semiconductor light-emitting portion (B; 42, 50) made of a nanowire. For example, by designing the semiconductor light-emitting portion (C) to emit blue light, designing the semiconductor light-emitting portion (A) to emit red light, and then forming the semiconductor light-emitting portion (B) with a nanowire structure, a three-color light-emitting monolithic LED can be implemented through two independent growth conditions that do not interfere with each other. Of course, the sizes of the semiconductor light-emitting portions (A, B, C) can be controlled as desired. The semiconductor light-emitting portions (A, B, C) can be implemented in the shapes presented in FIG. 27 and FIG. 28, but the presented example has the advantage of using the n-side contact region (30) as a common electrode (Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs; IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 15, NO. 4, JULY/AUGUST 2009).

FIG. 41 is a drawing showing an example of the experimental results according to the methods presented in FIGS. 27 to 33, wherein the semiconductor light-emitting part (A) presented on the left emits red (e.g., 610 nm), the semiconductor light-emitting part (B) presented on the right emits green (e.g., 550 nm), and the semiconductor light-emitting part (D) presented in the middle emits orange to yellow (e.g., 580 nm). In the experiment, hexagonal apertures having side lengths of 14 μm, 23 μm, and 40 μm, respectively, were used (see FIG. 32), and a spacing between the apertures was applied of 10 μm. It can be seen that the emission peak wavelength becomes longer as the aperture size decreases. As described above, it is judged that the smaller the aperture, the faster the growth speed, so that the thickness of the superlattice region (SL) and the active region (42) becomes thicker, and the amount of In injected also increases, so that light with a relatively longer wavelength is emitted. When compared with the growth conditions of the active region (42) presented in Table 9, in the case of selective growth using an opening having a size of 14 μm and a spacing of 10 μm, a red-emitting III-nitride semiconductor light-emitting device presented in FIG. 41 can be manufactured using conditions such that the supply amount of In/(In+GaN) is 60% and the thickness of the well layer and the barrier layer are grown to about 50%, and the present disclosure can be expanded to not only implementing various colors through selective growth on a single wafer, but also implementing a red-emitting III-nitride semiconductor light-emitting device by supplying a smaller amount of In than in the case where selective growth is not used by utilizing selective growth.

FIG. 42 is a drawing showing another example of the experimental results according to the methods presented in FIGS. 27 to 33, wherein the semiconductor light-emitting portion (A) presented on the left emits red light (e.g., 610 nm), the semiconductor light-emitting portion (E) presented in the middle has a width (e.g., 6 μm) smaller than the width of the semiconductor light-emitting portion (A) (i.e., the size of the opening; 14 μm) but emits blue light (e.g., 450 nm), and the semiconductor light-emitting portion (F) presented on the right has the same width (23 μm) as the semiconductor light-emitting portion (D) of FIG. 41 but emits white light rather than orange or yellow. The fact that the semiconductor light-emitting portion (E) emits light with a shorter wavelength rather than a longer wavelength does not match the interpretation of the results of the previous experiment. This is because, whereas each active region (42) of the semiconductor light-emitting portion (A), the semiconductor light-emitting portion (B), and the semiconductor light-emitting portion (D) grown on the growth substrate (10; see FIGS. 27 to 31) made of C-plane sapphire is grown on the top surface (T), i.e., the (0001) plane, the semiconductor light-emitting portion (E) has a small opening, so the active region (42L) is formed on the side surface (L), i.e., the (11-22) plane, not the top surface (T). In the case of the (11-22) plane, the growth speed is slower by about 1/2 to 1/7 compared to the (0001) plane, and In injection is also relatively poor, so it is presumed that blue light is emitted. In the case of the semiconductor light-emitting portion (F), the width (e.g., 23 μm) is set to be the same as that of the semiconductor light-emitting portion (D), but the gap between the apertures (see FIG. 33) is set to 30 μm instead of 10 μm, and assuming that the growth gas is supplied uniformly within the MOCVD equipment as the gap increases, the growth gas around the semiconductor light-emitting portion (F) with a wide gap increases, thereby accelerating the growth rate, and thus growing in a taller form than the semiconductor light-emitting portion (D), an active region (42T) and an active region (42L) are formed on the top surface (T) and the side surface (L), respectively, and orange to yellow light is emitted from the active region (42T) of the top surface (T), and blue light is emitted from the active region (42L) of the side surface (L). Since orange to yellow and blue are complementary colors, the color becomes white.

FIG. 43 is a graph summarizing the experimental results presented in FIGS. 41 and 42, and shows that as the size of the apertures (22, 23, 24; see FIG. 32) decreases overall, the emission peak wavelength shifts to a longer wavelength, but when the apertures have a size smaller than or equal to that an active region (42L) is formed on the side surface (L; for example, (11-22) plane) of a semiconductor light-emitting portion (A, E, F; see FIG. 42) under given growth conditions, an active region (42L) is formed on the side surface (L), and the active region (42L) emits light with a relatively shorter wavelength than light emitted from an active region (42T) formed on the upper surface (T). In addition, it is shown that by growing an active region (42T) and an active region (42L) on each of the upper surface (T) and the side surface (L), and controlling the growth conditions and the pattern of the growth-prevention region (22, E) so that each of them emits light with complementary colors, a single semiconductor light-emitting portion (F) can emit white light.

FIG. 44 is a diagram showing an example of the results of a photoexcitation (PL) experiment according to the present disclosure, showing, from the left, the u-GaN absorption result with excitation light of a wavelength of 325 nm, the p-GaN absorption result with excitation light of a wavelength of 325 nm, and the active layer absorption result with excitation light of a wavelength of 405 nm. In all cases, only very weak and identical deep level emission was measured, and even when light was selectively absorbed by the u-GaN, p-GaN, and the active layer, very weak and identical emission spectra were shown. There was no peak shift at all due to the bias applied (since the bias is applied only to the active layer, it means that it is not active emission), and in the case of 405 nm excitation, only a slight decrease in intensity was shown due to the reverse bias applied (the same deep level exists throughout the sample including the active).

Fig. 45 is a drawing showing an example of the results of an electroluminescence (EL) experiment according to the present disclosure, in which EL due to current injection starts at a longer wavelength that is completely different from PL, and in EL, luminescence with an intensity tens of times greater than the PL intensity is observed at a longer wavelength, and photoluminescence corresponding to EL is not observed even in low-temperature PL and high excitation PL. The operating voltage of EL is smaller than the minimum operating voltage (hv/e) obtained with the emission wavelength. The above results indicate that PL luminescence and EL luminescence occur in spatially different and separated regions.

FIG. 46 is a drawing showing an example of the results of an electroluminescence (EL) experiment with an added laser according to the present disclosure, whereby the intensity of the EL dramatically increases (more than three times) when the laser is additionally irradiated while the EL is turned on. In the case of irradiation with only the laser, a very weak different PL is observed as described above, and when excitation light is added during EL observation by applying a forward voltage, the EL intensity increases nonlinearly, and the degree depends on the wavelength of the excitation light. At this time, the irradiated laser has a wavelength of 405 nm, and the energy of the laser is greater than the energy of the well layer and less than the energy of the barrier layer or the p-GaN, n-GaN layer. In other words, the laser is selectively absorbed only in the well layer.

The experimental results of Figs. 44 to 46 are summarized as follows: ① EL is observed, but PL is not observed. ② Absorption by the excitation laser in PL occurs in the quantum well layer. Photocurrent measurement results experimentally confirm this. ③ Laser absorption in PL occurs in the quantum well layer, but luminescence in the quantum well layer is not observed. ④ The density of nonradiative recombination centers in the quantum well layer is large, so the photoluminescence efficiency is very low. ⑤ EL occurs in a different region spatially separated from PL.

A light-emitting mechanism that conforms to this theory, that is, light emission via tunneling injection, is schematically illustrated in Fig. 47 (Paper: Tunnel Injection and Power Efficiency of InGaN/GaN Light-Emitting Diodes; ISSN 1063-7826, Semiconductors, 2013, Vol. 47, No. 1, pp. 127-134. ⓒPleiades Publishing, Ltd., 2013.). Electrons are injected by tunneling into low energy states in the AlGaN barrier layer. In EL, electron-hole recombination occurs by avoiding the quantum well layer with a high density of non-radiative recombination centers, and the barrier layer has a low density of non-radiative recombination centers, which enables high-efficiency, low-energy (long-wavelength) light emission and observation of EL with a low operating voltage (see Fig. 48).

Unlike the existing GaN-based LED, it is necessary to examine what makes light emission through tunneling injection possible in the semiconductor light-emitting device according to the present disclosure. As illustrated in FIG. 21, when the lateral growth enhancement layer (36 or 37) was not introduced between the active region (42) and the superlattice region (35) adjacent thereto, such light emission was achieved, but when the lateral growth enhancement layer (36 or 37) was introduced, this was not the case. Therefore, aside from the interpretation that the active region (42) can be grown on the semi-polar plane to increase the injection of In in the case where the lateral growth enhancement layer (36 or 37) is not provided, it can be interpreted that tunneling injection became possible by growing the active region (42) without restoring the defects created by the rough surface (S) through the lateral growth enhancement layer (36 or 37).

As illustrated in Fig. 49, as the barrier thickness becomes thinner, coupling occurs between the last QW and the second QW, which causes the energy state of the QW to split in two and the energy of the ground state to become lower (the wavelength becomes longer) (Paper: Effect of electric fields on excitons in a coupled double-quantum-well structure; PHYSICAL REVIEW B VOLUME 36, NUMBER 8 15 SEPTEMBER 1987-I). This interpretation is also consistent with the experimental result presented in Fig. 24, which states that 'it was also confirmed that as the barrier layer in the active region (42) becomes thinner and as the well layer becomes thicker, the wavelength changes to a longer wavelength.' Therefore, according to the experimental results and interpretation according to the present disclosure, by making the last barrier thinner and the last well layer thicker, the emission wavelength can be controlled to a longer wavelength.

FIG. 52 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein the light-emitting element includes a first semiconductor light-emitting portion (G), a second semiconductor light-emitting portion (H), and a third semiconductor light-emitting portion (I). Each of the semiconductor light-emitting portions (G, H, I) can emit light of different wavelengths, and can be configured to emit, for example, blue light-green light-red light or red light-green light-blue light. The first semiconductor light-emitting portion (G) includes a first semiconductor region (30a) having a first conductivity, an active region (40a) generating light, and a second semiconductor region (50a) having a second conductivity different from the first conductivity, the second semiconductor light-emitting portion (H) includes a first semiconductor region (30b) having a first conductivity, an active region (40b) generating light, and a second semiconductor region (50b) having a second conductivity different from the first conductivity, and the third semiconductor light-emitting portion (I) includes a first semiconductor region (30c) having a first conductivity, an active region (40c) generating light, and a second semiconductor region (50c) having a second conductivity different from the first conductivity. The first semiconductor region (30a, 30b, 30c) may be configured to include the aforementioned n-side contact region (30), the second semiconductor region (50a, 50b, 50c) may be configured to include the aforementioned p-side contact region (52), and the active region (40a, 40b, 40c) may be configured in a form corresponding to the wavelength to be generated, for example, with an InGaN/(In)GaN multi-quantum well structure, and the active region (42) according to the present disclosure described above may be applied in the case of emitting red light. It goes without saying that the first semiconductor region (30a, 30b, 30c) may be configured to include the aforementioned p-side contact region (52), and the second semiconductor region (50a, 50b, 50c) may be configured to include the aforementioned n-side contact region (30). Preferably, a first insulating layer (65a) is provided between the first semiconductor light-emitting portion (G) and the second semiconductor light-emitting portion (H), and a second insulating layer (65b) is provided between the second semiconductor light-emitting portion (H) and the third semiconductor light-emitting portion (I). In the case where the insulating layers (65a, 65b) are composed of a material such as SiO ₂ or SiN _x , there is a problem in that after the growth of the first semiconductor light-emitting portion (G), the growth must be stopped and the first insulating layer (65a) must be formed outside the growth device (e.g., MOVCD device) and the second semiconductor light-emitting portion (H) must be grown again (same goes for the second insulating layer (65b)). Therefore, it is possible to form the insulating layers (65a, 65b) with a material that can be formed in the same way as the semiconductor light-emitting portions (G, H, I) (e.g., AlN, Fe-doped GaN, C-doped GaN, Cr-doped GaN (transition metal Mn, Co, and Fe)). It is also possible to form them by ion implantation. It goes without saying that a buffer region (20; see FIG. 2) may be provided between the growth substrate (10) and the first light-emitting portion (G), between the first insulating layer (65a) and the second light-emitting portion (H), and between the second insulating layer (65b) and the third light-emitting portion (I). The method for forming materials (e.g., AlN, Fe-doped GaN, C-doped GaN, Cr-doped GaN (transition metal Mn, Co, and Fe)) that can be formed in the same way as the semiconductor light-emitting part (G, H, I) is described in the paper (Electrical and Optical Properties of Carbon-Doped GaN Grown by MBE on MOCVD GaN Templates Using a CCl4 Dopant Source; Presented at 2002 MRS Spring meeting, April 2-5, 2002, San Francisco, CA, USA), the paper (Structural and optical properties of Cr-doped semi-insulating GaN epilayers; APPLIED PHYSICS LETTERS 93, 113507 2008), and the paper (Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination; J Appl Phys 130, 185702 (2021)). It is well published in papers (Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy; Appl. Phys. Lett. 75, 953 (1999)) and papers (Semi-insulating GaN by Fe-Doping in Hydride Vapor Phase Epitaxy Using a Solid Iron Source; Semi-insulating GaN by Fe-Doping in HVPE).

FIG. 53 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein, in addition to the structure presented in FIG. 52, a first internal current spreading layer (66a, 67a), a second internal current spreading layer (66b, 67b), and a third internal current spreading layer (66c, 67c) are provided on each of the second semiconductor regions (50a, 50b, 50c). The internal current spreading layers (66a, 67a, 66b, 67b, 66c, 67c) are introduced to improve the current spreading of the second semiconductor regions (50a, 50b, 50c) having p-type conductivity with low current spreading capability. A third external current diffusion layer (60c; for example, a TCO (Transparent Conductive Oxide) such as ITO, a reflective metal such as Al, Au, Ag, or an alloy including a reflective metal) is further provided on the third internal current diffusion layer (66c, 67c). The third external current diffusion layer (60c) corresponds to the above-described current diffusion electrode (60), and at least one of the third external current diffusion layer (60c) and the third internal current diffusion layer (66c, 67c) may be omitted, and a first external current diffusion layer (not shown) may be provided on the first semiconductor light-emitting portion (G) and a second external current diffusion layer (not shown) may be provided on the second semiconductor light-emitting portion (H). When forming the internal current diffusion layers (66a, 67a, 66b, 67b, 66c, 67c) with a transparent conductive film (TCO) such as ITO, complications may arise, as in the case of forming the insulating layer (65a, 65b). Therefore, it is preferable to form them with a material that can be formed in the same way as the semiconductor light-emitting portion (G, H, I), and through this configuration, the present disclosure enables the manufacture of a III-group semiconductor light-emitting structure or light-emitting element that emits various wavelengths through a single epitaxial growth process. For example, the internal current diffusion layers (67a, 67b, 67c) can be made of n-GaN like the first semiconductor region (30a, 30b, 30c), and the internal current diffusion layers (66a, 66b, 66c) can be made of a tunnel junction region (e.g., n++GaN/P++GaN, each having a thickness of 50 nm or less and a doping concentration of 10 ²⁰ or more). In this sense, the internal current diffusion layers (67a, 67b, 67c) can be referred to as current diffusion enhancement regions that promote current diffusion in the second semiconductor region (50a, 50b, 50c), and the internal current diffusion layers (66a, 66b, 66c) can be referred to as current supply regions that enable current supply from the internal current diffusion layers (67a, 67b, 67c) to the second semiconductor region (50a, 50b, 50c).

FIG. 54 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein, in a first semiconductor light-emitting portion (G) and a second semiconductor light-emitting portion (H), the positions of the first semiconductor region (30a, 30b) and the second semiconductor region (50a, 50b) are swapped with respect to the active region (40a, 40b). In the case where the second semiconductor region (50a, 50b) has p-type conductivity, in order to improve current diffusion, a first internal current diffusion layer (67a) and a first internal current diffusion layer (66a) are sequentially positioned from the growth substrate (10) under the second semiconductor region (50a), and a second internal current diffusion layer (67b) and a second internal current diffusion layer (66b) are sequentially positioned under the second semiconductor region (50b). The positions of the first semiconductor region (30c) and the second semiconductor region (50c) of the third semiconductor light-emitting portion (I) can be swapped, but after the third semiconductor light-emitting portion (I) is grown, the epi process is completed and the electrode forming process follows, so it is sufficient to configure the uppermost layer of the third semiconductor light-emitting portion (I) as the second semiconductor region (50c) having p-type conductivity and form the third external current diffusion layer (60c) after the epi process is completed.

FIG. 55 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure. Unlike the example presented in FIG. 52, the second insulating layer (65b) is omitted, the positions of the first semiconductor region (30b) and the second semiconductor region (50b) in the second semiconductor light-emitting portion (G) are switched, and the first semiconductor region (30b) of the second semiconductor light-emitting portion (H) and the first semiconductor region (30c) of the third semiconductor light-emitting portion (I) are used in common. As will be described later, through this configuration, the first semiconductor region (30b) and the first semiconductor region (30c) can be controlled through a single electrode.

FIG. 56 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein, unlike the example presented in FIG. 52, the second semiconductor region (50a) of the first semiconductor light-emitting portion (G) and the second semiconductor region (50b) of the second semiconductor light-emitting portion (H) are used in common. As in FIG. 55, the positions of the first semiconductor region (30b) and the second semiconductor region (50b) of the second semiconductor light-emitting portion (H) are switched.

FIG. 57 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure. Unlike the example shown in FIG. 52, the insulating layer (65a, 65b) is omitted, and the example shown in FIG. 55 and the example shown in FIG. 56 are combined so that the second semiconductor region (50a) and the second semiconductor region (50b) of the first semiconductor light-emitting portion (G) and the second semiconductor light-emitting portion (H) are used in common, and the first semiconductor region (30b) and the first semiconductor region (30a) of the second semiconductor light-emitting portion (H) and the third semiconductor light-emitting portion (I) are used in common. The positions of the first semiconductor region (30b) and the second semiconductor region (50b) of the second semiconductor light-emitting portion (H) are switched.

FIG. 58 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein, in the example presented in FIG. 53, a first-1 electrode (70a), a first-2 electrode (70b), a first-3 electrode (70c), and a second-1 electrode (80a) are formed. A passivation film (95; e.g., SiO ₂ ) having an insulating function and an element protection function is formed between the electrodes (70a, 70b, 70c, 80a) and the third semiconductor light-emitting portion (I). The second-1 electrode (80a) is configured in the form of a common electrode for the first semiconductor regions (30a, 30b, 30c). It goes without saying that pads can be formed respectively. For such electrical connection, via holes (V1a, V1b, V1c) connected to each of the first semiconductor regions (30a, 30b, 30c) and via holes (V2a, V2b, V2c) connected to each of the second semiconductor regions (50a, 50b, 50c) are formed. In the case of the third semiconductor light-emitting portion (I), the via hole (V1c) is formed up to the first semiconductor region (30c), the 2-3 electrode (80a; common electrode) is connected to the first semiconductor region (30c) and is electrically connected, and the via hole (V2c) is formed up to the first internal current diffusion layer (67c), and the 1-3 electrode (70c) is electrically connected thereto. In the case where the third internal current diffusion layer (66c, 67c) is omitted, the first-third electrode (70c) is connected to the third external current diffusion layer (60c) (the third external current diffusion layer (60c) may be omitted when the third internal current diffusion layer (66c, 67c) is provided). In the case where the third external current diffusion layer (60c) is also absent, it is directly electrically connected or in contact with the second semiconductor region (50c). The same applies to the semiconductor light-emitting portion (G, H). Although the electrical connections illustrated in FIGS. 50 and 51 can be used, it is not easy to secure the electrode area when the device becomes extremely small (50 μm or less). However, when the growth substrate (10; see FIG. 58) is removed as in FIG. 50 or a conductive growth substrate (10) is used, it goes without saying that one of the electrodes (70, 80) may be formed on the back surface of the growth substrate (10). It is also possible to configure the first electrodes (70a, 70b, 70c) as a common electrode with one pad, without using the 2-1 electrode (80a) as a common electrode.

FIG. 59 is a drawing showing another example of a III-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, wherein, in the example presented in FIG. 55, a first-first electrode (70a), a first-second electrode (70b), a first-third electrode (70c), and a second-first electrode (80a) are formed. The second-first electrode (80a) is a common electrode for the second-second electrode (80b) and the second-third electrode (80c). Since the first semiconductor regions (30b, 30c) are commonly used for the semiconductor light-emitting portions (H, I), the second-second electrode (80b) and the second-third electrode (80c) are formed through one via hole (V1b (V1c)), which has the advantage of reducing the overall number of via holes by one compared to the example presented in FIG. 58.

FIG. 60 is a drawing showing another example of a 3-nitride semiconductor light-emitting structure or light-emitting element according to the present disclosure, and, in the example presented in FIG. 57, an example is presented in which the number of via holes can be reduced by two by using the 1-1 electrode (70a) and the 1-2 electrode (70b) in common and using the 2-2 electrode (80b) and the 2-3 electrode (80c) as common electrodes. However, it is not possible to independently control all three semiconductor light-emitting parts (G, H, I).

FIGS. 61 and 62 are drawings showing experimental results showing actual implementation of the III-nitride semiconductor light-emitting structure or light-emitting element described in FIGS. 52 to 60, and the experimental results show the results of wafer-level EL measurement in which the above-described red light-emitting semiconductor light-emitting structure (42; e.g., Table 9) is applied to the third semiconductor light-emitting portion (I), and the red light wavelength was normally observed.

Figure 63 is a drawing showing the experimental results showing the actual implementation of the III-nitride semiconductor light-emitting structure or light-emitting element described in Figures 52 to 60, showing the results of wafer-level indium ball contact EL measurement, and it can be seen that blue light, green light, and red light are all emitted well.

FIG. 64 is a drawing showing an example of a method for measuring a group III nitride semiconductor light-emitting structure or light-emitting element in a wafer state shown in FIGS. 52 to 57, and explains using the group III nitride semiconductor light-emitting structure or light-emitting element shown in FIG. 52 as an example. An example of a process for measuring EL (Electroluminescence) in a light-emitting structure or light-emitting element in which a third semiconductor light-emitting portion (I) emits red light is presented. Typically, as shown in FIG. 51, the first semiconductor region (110a, 120a, 230a) and the second semiconductor region (110c, 120c, 230c) of the semiconductor light-emitting portion (110, 120, 230) are exposed, and the EL of the corresponding active region (110b, 120b, 230b) is measured, but it has been found that the EL of the third semiconductor light-emitting portion (I), which is the uppermost portion, can be measured even without such an exposure process. As described above, first, a conductive pad (IB; for example, an indium ball) is attached to the first semiconductor region (30c) of the third semiconductor light-emitting portion (I). Since the first semiconductor region (30c) has a thickness of 10 ㎛ or less, the conductive pad (IB) is formed at least across the second semiconductor light-emitting portion (H). Of course, it can be attached across the first semiconductor light-emitting portion (G). Of course, the conductive pad can also be formed in the second semiconductor region (50c). In this state, when EL is measured through the probe or measuring electrode (IC, IA), it was confirmed that EL of the active region (40c) of the third semiconductor light-emitting portion (I) can be measured without EL interference between the active region (40a) of the first semiconductor light-emitting portion (G) and the active region (40b) of the second semiconductor light-emitting portion (H). The actual measurement process is shown in Fig. 65, which shows that the current flows through the path with the lowest resistance, and since the second insulating layer (65b) is located below the third semiconductor light-emitting portion (I), the current flows only between the second semiconductor region (50c) and the first semiconductor region (30c), so that even if the conductive pad (IB) is formed across the second semiconductor light-emitting portion (H) and further across the first semiconductor light-emitting portion (G), the EL of the third semiconductor light-emitting portion (I) can be measured without being influenced by them. In the case of the example presented in FIG. 55, an insulating layer (65b) is not provided between the second semiconductor light-emitting portion (H) and the third semiconductor light-emitting portion (I), and in the case of the example presented in FIG. 57, an insulating layer (65b) is not provided between the second semiconductor light-emitting portion (H) and the third semiconductor light-emitting portion (I), and an insulating layer (65a) is not provided between the first semiconductor light-emitting portion (G) and the second semiconductor light-emitting portion (H), but the EL of the third semiconductor light-emitting portion (I) can be measured by the same principle (current flows through the path with the lowest resistance). Furthermore, by injecting a low current to measure the EL of the third semiconductor light-emitting portion (I), and increasing the current so that the current in the third semiconductor light-emitting portion (I) becomes saturated, the remaining current flows to the second semiconductor light-emitting portion (H), so that the EL characteristics of the second semiconductor light-emitting portion (H) can be determined, and in the case of the example presented in Fig. 57, if the current is further increased, the EL characteristics of the first semiconductor light-emitting portion (G) can also be determined.

FIGS. 66 to 68 are drawings showing further examples of measurement results according to the present disclosure, wherein FIG. 66 shows ESD analysis results, and FIGS. 67 and 68 show point-wise composition analysis results. As a result of measuring 7 points on the last quantum well layer among the 3-period quantum well layers of the active area (42) presented in Fig. 22, the contents (x) of indium (In) were measured as 12.90%, 11.26%, 10.94%, 11.49%, 12.25%, 10.89%, and 13.42%, respectively. Since the average value was 11.88%, it was rounded up to 12%, and it was determined that the content (x) exists in the range of 10 to 20%. From these results, it was confirmed that in the case of the quantum well layer of the red-emitting III-nitride semiconductor light-emitting device according to the present disclosure, the indium content of the quantum well layer emits green or blue light based on the measured value, but the actual light emission is red light. The principle corresponding to these results is currently judged to be valid as a theoretical explanation related to the experimental results of Figs. 44 to 46. Therefore, according to this measurement _result , the III-nitride semiconductor light-emitting device according to the present disclosure can be defined as _{a III-} nitride semiconductor light-emitting device that has (as measured) a value equal to or higher than the value when emitting blue (approximately 0.1) and lower than the value when emitting green (approximately 0.2) in the content (x) of indium (In) in a quantum well layer made of In x Ga 1-x N theoretically, but emits red light. In the presented example, it can be seen that light of 500 nm or less should be emitted based on the content (x = 0.12), but the actual light emission is 600 nm or more. In extension, it becomes possible to manufacture a III-nitride semiconductor light-emitting device that emits light of a wavelength of 600 nm or more from an active region having a quantum well layer having a content (x) corresponding to an emission wavelength of less than 600 nm (furthermore, an emission wavelength of less than 500 nm).

Returning to FIGS. 41 to 43, FIG. 41 shows an example of using regular hexagonal apertures (with an aperture spacing of 10 μm) having side lengths of 14 μm, 23 μm, and 40 μm, respectively, to emit red (e.g., 610 nm), orange to yellow (e.g., 580 nm), and green (e.g., 550 nm) light, respectively, and FIG. 42 shows an example of using regular hexagonal apertures (with an aperture spacing of 14 μm, 6 μm, and 23 μm), to emit red (e.g., 610 nm), blue (e.g., 450 nm), and white (with an aperture spacing of 30 μm), respectively. These results show that an appropriate combination of these can emit white light (either white itself, or by combining blue, green, and red, or by utilizing the complementary color (e.g., orange, blue) relationship), and as illustrated in FIG. 32, by growing them adjacently, they can independently emit color, provide white light, or combine liquid crystals with this white light to utilize them in a display. For example, a light-emitting portion (D) that emits orange to yellow (e.g., 580 nm) can be formed through an opening having a side length of 23 μm as illustrated in FIG. 41, and a light-emitting portion (E) that emits blue (e.g., 450 nm) can be grown together through an opening having a side length of 6 μm as illustrated in FIG. 42 to configure them to emit white light through their complementary color relationship. In addition, a light emitting portion (A) that emits red (e.g., 610 nm) is formed through an opening with a side length of 14 μm, a light emitting portion (B) that emits green (e.g., 550 nm) is formed through an opening with a side length of 40 μm, and a light emitting portion (E) that emits blue (e.g., 450 nm) is formed through an opening with a side length of 6 μm, thereby emitting white light. A common feature of these configurations is that, unlike the phenomenon presented in Fig. 41 (where a smaller aperture (length or width of one side) emits longer wavelength light), they emit relatively shorter wavelength light through a light-emitting portion (E) with a smaller aperture (length or width of one side), and selective growth is used to form a yellow light-emitting portion (D; 23 μm) - blue light-emitting portion (E; 6 μm) or a green light-emitting portion (B; 40 μm) - red light-emitting portion (A; 14 μm) - blue light-emitting portion (E; 6 μm) to provide white light, but they are characterized in that the size of each aperture (the etched area in the case of Fig. 29) is smaller in the presented order.

FIG. 69 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, and shows a flip-chip structure in which a first electrode (70a), a first electrode (70b), a first electrode (70c), and a second electrode (80) are provided in the structure shown in FIG. 31, but the first electrode (70a), the first electrode (70b), and the first electrode (70c) are formed while leaving the growth-prevention film (21) for selective growth as it is, and the second electrode (80) is formed by removing the growth-prevention film (21) for selective growth. The first electrode (70a), the first electrode (70b), and the first electrode (70c) each include a reflective metal (e.g., Al, Au, Ag) that matches the emission wavelength of the semiconductor light-emitting portions (A, B, C), respectively. It goes without saying that the principle described through Figs. 41 and 42 can be applied, and in this case, two p-side electrodes can be applied instead of three. It goes without saying that the growth-prevention film (21) can be removed and a separate insulating film (e.g., SiO ₂ , polyimide) can be formed, and the growth-prevention film (21) can also be viewed as a type of insulating film or passivation film.

FIG. 70 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, in which a semiconductor light-emitting part (D) emitting orange or yellow and a semiconductor light-emitting part (E) emitting blue are formed by applying the principle presented in FIGS. 41 and 42, and a single electrode (70) is formed on these to implement a device that emits white light by utilizing a complementary color relationship when power is supplied. In addition, it is also possible to supply power to each of the first-first electrode (70a), the first-second electrode (70b), and the first-third electrode (70c) presented in FIG. 69 to emit white light, or it is also possible to configure all of them as one electrode and supply power to emit white light. Of course, the first electrode (70) can be formed by dividing it into two, but in the case of a flip chip, since the first electrode (70) functions as a reflective film, it is preferable to form it over the entire or almost the entire growth-prevention film (21). PSS technology can also be introduced to the growth substrate (10) to allow the light to mix well within the device.

FIG. 71 is a drawing showing another example of a semiconductor light-emitting device according to the present disclosure, showing a structure in which a current diffusion electrode (60) is provided instead of a reflective metal, and a first electrode (70) is formed thereon, and a lateral chip rather than a flip chip is implemented. Of course, a vertical chip can be implemented by removing the growth substrate (10). A growth prevention film or an insulating film (21) is positioned over the current diffusion electrode (60), and of course, a passivation film can be additionally provided. In FIG. 71, the first electrode (70) is illustrated on a semiconductor light-emitting portion (E), so that the first electrode (70) appears to block the light of the semiconductor light-emitting portion (E), but in an actual device, if a plurality of semiconductor light-emitting portions (E) and a plurality of semiconductor light-emitting portions (D) are provided as shown in FIG. 32, this does not pose a significant problem, and the position of the first electrode (70) can be optimized in consideration of this point.

Below, various embodiments of the present disclosure are described.

(1) A method for manufacturing a III-nitride semiconductor light-emitting structure that emits red light having a peak emission wavelength of 600 nm or more, comprising: a step of growing a first superlattice region formed by repeatedly stacking a first sub-layer and a second sub-layer; And, a step of growing an active region, which includes a third sub-layer made of a III-nitride semiconductor including Al and having a first band gap energy, a fourth sub-layer made of a III-nitride semiconductor including In and having a second band gap energy smaller than the first band gap energy, and a fifth sub-layer made of a III-nitride semiconductor including Al and having a third band gap energy larger than the second band gap energy; comprising; In the step of growing the active region, the In content of the fourth sub-layer is set so that the fourth sub-layer emits light having an emission peak wavelength of 600 nm or less when the third sub-layer and the fifth sub-layer are GaN, and the Al content of the third sub-layer and the Al content of the fifth sub-layer are set so that the fourth sub-layer emits red light having an emission peak wavelength of 600 nm or more.

(2) A method for manufacturing a group III nitride semiconductor light-emitting structure, wherein the active region includes a quantum well structure, the fourth sub-layer is a quantum well layer, and the third and fifth sub-layers are quantum barrier layers. (See Fig. 3)

(3) A method for manufacturing a 3-group nitride semiconductor light-emitting structure by decreasing and then increasing the supply of In during the process of growing the 4th sublayer. (See Fig. 4)

(4) A method for manufacturing a III-nitride semiconductor light-emitting structure, in which the third sub-layer, the fourth sub-layer, and the fifth sub-layer are sequentially grown multiple times in the step of forming an active region, and the fifth sub-layer provided on the uppermost side shifts the emission peak wavelength of the entire active region to a long wavelength, including InGaN. (See FIG. 5)

(5) A method for manufacturing a III-nitride semiconductor light-emitting structure, wherein the fifth sub-layer provided on the uppermost side is made of InGaN-GaN.

(6) A method for manufacturing a group III nitride semiconductor light-emitting structure, wherein the third sub-layer and the fifth sub-layer are each made of AlGaN-GaN-AlGaN.

(7) A method for manufacturing a group III nitride semiconductor light-emitting structure, wherein the first sub-layer has a fourth band gap energy, the second sub-layer has a fifth band gap energy greater than the fourth band gap energy, and the second sub-layer is made of AlGaN-(In)GaN, AlGaN-(In)GaN-AlGaN, or (In)GaN-AlGaN. (See Fig. 11(c))

(8) A method for manufacturing a group III nitride semiconductor light-emitting structure, wherein the Al content of AlGaN in the second sublayer is greater than the Al content in the third sublayer and the Al content in the fifth sublayer.

(9) A method for manufacturing a III-nitride semiconductor light-emitting structure, the active region of which includes a superlattice structure. (See Table 7)

(10) A method for manufacturing a III-nitride semiconductor light-emitting structure in which the third sub-layer and the fifth sub-layer are made of GaN-AlGaN. (See Fig. 17(b))

(11) A group III nitride semiconductor light-emitting device, comprising: an active region that emits red light; and a semi-polar plane provided below the active region for growth of the active region.

(12) A group III nitride semiconductor light-emitting device in which the active region is grown on a rough surface composed of semi-polar planes.

(13) A III-nitride semiconductor light-emitting device including a superlattice region having a rough surface.

(14) A III-nitride semiconductor light-emitting device having a superlattice region and an AlGa|N-InGaN interface.

(15) A III-nitride semiconductor light-emitting device comprising an additional superlattice region below a superlattice region.

(16) A III-nitride semiconductor light-emitting device comprising a lateral growth enhancement layer between a superlattice region and an additional superlattice region.

(17) A III-nitride semiconductor light-emitting device comprising a strain-controlled region beneath a superlattice region.

(18) A method for measuring a group III nitride semiconductor light-emitting device, comprising: a step of forming a first group III nitride semiconductor light-emitting portion having a first semiconductor region having a first conductivity, a second semiconductor region having a second conductivity different from the first conductivity, and an active region interposed between the first semiconductor region and the second semiconductor region and emitting a first light; and a second group III nitride semiconductor light-emitting portion emitting a second light different from the first light; a step of forming a conductive pad connecting the first semiconductor region to the second group III nitride semiconductor light-emitting portion at a side of the first group III nitride semiconductor light-emitting portion and the second group III nitride semiconductor light-emitting portion; and a step of measuring light emission of the first group III nitride semiconductor light-emitting portion through a first measuring electrode and a second measuring electrode which are in contact with each of the conductive pad side and the second semiconductor region side.

(19) A method for measuring a group III nitride semiconductor light-emitting device having a first insulating layer provided between a group III nitride semiconductor light-emitting portion and a group III nitride semiconductor light-emitting portion.

(20) A method for measuring a group III nitride semiconductor light-emitting device, the measuring step including a process of measuring light emission of a first group III nitride semiconductor light-emitting portion by supplying a first current through a first measuring electrode and a second measuring electrode, and a process of measuring light emission of the first group III nitride semiconductor light-emitting portion and light emission of the second group III nitride semiconductor light-emitting portion together by supplying a second current greater than the first current.

(21) A method for measuring a group III nitride semiconductor light-emitting device whose first light is red light.

(22) A method for manufacturing a group III nitride semiconductor light-emitting device, comprising: a step of selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; a step of selectively growing the first semiconductor light-emitting portion to emit blue light and the second semiconductor light-emitting portion to emit light having a wavelength longer than blue; and a step of forming at least one electrode to supply power to the first semiconductor light-emitting portion and the second semiconductor light-emitting portion.

(23) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein a second semiconductor light-emitting portion emits light of a complementary color to blue.

(24) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein a third semiconductor light-emitting portion is selectively grown through a third opening larger than the first opening in the selective growth stage.

(25) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein in the selective growth step, the selective growth is performed through a growth-blocking film.

(26) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein in the forming step, at least one electrode is plural and one growth-prevention film is used as an insulating film between the plural electrodes.

(27) A method for manufacturing a group III nitride semiconductor light-emitting device, comprising: a step of selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; wherein the first opening and the second opening are formed in one growth-preventing film; and a step of forming at least one electrode to supply power to the first semiconductor light-emitting portion and the second semiconductor light-emitting portion using the growth-preventing film as a passivation film.

(28) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein a first semiconductor light-emitting unit and a second semiconductor light-emitting unit each emit light of complementary colors so as to emit white light.

(29) A method for manufacturing a group III nitride semiconductor light-emitting device, wherein, prior to the forming step, a third semiconductor light-emitting portion is grown, and the first semiconductor light-emitting portion emits one of blue light, green light, and red light, the second semiconductor light-emitting portion emits one of the remaining two, and the third semiconductor light-emitting portion emits the remaining one, so as to emit white light.

According to the III-nitride semiconductor light-emitting device and the method for manufacturing the same according to the present disclosure, it is possible to practically implement a III-nitride semiconductor light-emitting device that emits red light.

According to the present disclosure, a group III nitride semiconductor light-emitting device and a method for manufacturing the same are provided, which emits a plurality of lights having different wavelengths, and a method for manufacturing the same.

According to the method for measuring a III-nitride semiconductor light-emitting device according to the present disclosure, it is possible to easily measure light emission of the uppermost light-emitting portion of a light-emitting device having a plurality of light-emitting portions.

According to the III-nitride semiconductor light-emitting device and the method for manufacturing the same according to the present disclosure, white light can be realized by using a plurality of semiconductor light-emitting parts grown on a single growth substrate.

Growth substrate (10), buffer region (20), n-side contact region (30), superlattice region (31), active region (42), electron blocking layer (51), p-side contact region (52), current spreading electrode (60), first electrode (70), second electrode (80)

Claims (8)

A method for manufacturing a group III nitride semiconductor light-emitting device,
A step of selectively growing a first semiconductor light-emitting portion through a first opening and a second semiconductor light-emitting portion through a second opening larger than the first opening; a step of selectively growing the first semiconductor light-emitting portion to emit blue light and the second semiconductor light-emitting portion to emit light of a wavelength longer than blue that is complementary to blue so that the semiconductor light-emitting element emits white light; and,
A method for manufacturing a III-nitride semiconductor light-emitting device, comprising: a step of forming at least one electrode to supply power to a first semiconductor light-emitting unit and a second semiconductor light-emitting unit; wherein each of the first semiconductor light-emitting unit and the second semiconductor light-emitting unit has an n-side contact region, an active region, and a p-side region, and at least one electrode has a first electrode electrically connected to the n-side region of the first semiconductor light-emitting unit and the second semiconductor light-emitting unit and a common second electrode electrically connected to the p-side region of the first semiconductor light-emitting unit and the second semiconductor light-emitting unit; delete delete In claim 1,
In the selective growth stage, selective growth is achieved through a growth barrier.
A method for manufacturing a group III nitride semiconductor light-emitting device, wherein a common second electrode, which is a reflective film, covers a first semiconductor light-emitting portion and a second semiconductor light-emitting portion on a single growth-preventing film. delete In claim 1,
In the selective growth stage, selective growth is achieved through a growth barrier.
A method for manufacturing a group III nitride semiconductor light-emitting device, wherein a current diffusion electrode covering a first semiconductor light-emitting portion and a second semiconductor light-emitting portion is formed on a growth-prevention film, and a common second electrode is formed on the current diffusion electrode.
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