KR20030033277A - Vertically integrated high-power surface-emitting laser diode and method of manufacturing the same - Google Patents

Abstract

PURPOSE: A high output vertical cavity surface emitting laser is provided, which is appropriate for a light source of optical pumping, and is also appropriate for a Raman optical amplifier as outputting a high output laser of 1200nm - 1500nm wavelength, and performs a single longitudinal mode or a single lateral mode oscillation. CONSTITUTION: The first light emitting structure includes a bottom DBR(Distributed Bragg Reflector)(1) and the first top DBR(3) and the first active layer(2) formed between the bottom DBR and the first top DBR, and is arranged on one plane of a GaAs substrate(4), and radiates at the first wavelength by being pumped electrically. The second light emitting structure includes a bottom DBR(7) and a top DBR(9) and the second active layer(8) formed between the above bottom DBR and the above top DBR, and is arranged on another plane of the GaAs substrate, and excites a light of the second wavelength optically by the light of the first wavelength of the first light emitting structure. And a pair of electrodes(10,11) are bonded onto the bottom DBR of the first light emitting structure and onto another plane of the GaAs substrate. An optical lens(13) is formed on another plane of the GaAs substrate, and the second top DBR(6) belonging to the first light emitting structure is formed between the optical lens and the second light emitting structure.

Description

VERTICALLY INTEGRATED HIGH-POWER SURFACE-EMITTING LASER DIODE AND METHOD OF MANUFACTURING THE SAME

The present invention relates to a vertical resonator type high power semiconductor laser device, and more particularly, to a high output surface light emitting semiconductor laser device which maintains a single longitudinal mode, which is an important feature of a vertical resonator type surface emitting laser, at a high power level and performs a single transverse mode oscillation. It is about.

Conventionally, Vertical Cavity Surface Emitting Laser (VCSEL) not only performs single-mode oscillation of very narrow spectrum but also has low beam angle and high connection efficiency and integration with other devices due to the structure of surface emission. Monolithic Integration) is easy. These features make VCSELs suitable for light pumping light sources.

However, in the conventional VCSEL, single lateral mode oscillation is very difficult compared to single-sided light emitting LD (Edge EmittingLD), and for the normal single lateral mode operation, the area of the oscillation area should be 10 μm or less, even in this case, the increase in light output As a result, the effect of heat applied by the thermal lens effect is changed to multi-mode operation, so the limit of the single lateral mode output is generally not more than 5 dB.

On the other hand, the method proposed to take advantage of the above-described VCSEL and at the same time to implement high output operation is VECSEL (Vertical External Cavity Surface Emitting Laser) (IEEE Photonics Technology Letters, Vol 11, Issue 12, 1999, 1551-1553).

According to the above cited data, the upper mirror of the VCSEL is replaced with an external mirror to increase the gain area, so that a single lateral mode and a single longitudinal mode light output of 40 GHz or more are obtained, and two or more optical pumping diodes are adopted. It has been reported that the light output of ㎽ was obtained.

However, the disadvantages of the conventional VECSEL structure described above are that, first, the VECSEL structure is a structure by optical pumping, not an operation by current injection, and secondly, a separate external mirror is used. Both of these drawbacks not only make the device very large, but also increase the number of parts used, which increases the cost of the device and makes the device difficult to use.

Recently, it has been proposed to overcome the first problem of the conventional VECSEL structure described above, namely, an operation by external light pumping and to have a structure by direct current injection (US Pat. No. 6,243,407). This structure, commonly referred to as Novalux Extended Cavity Surface Emitting Laser (NECSEL), is almost similar to the above-described VECSEL structure, except that it electrically pumps the active layer. However, since this structure also uses a separate external mirror, it does not completely overcome the problems of the prior art described above.

In addition, in order to be used in the Raman Optical Amplifier, which is a main application of the present invention, a GaInNAs ternary hybrid system having a lattice match with a GaAs substrate should be used as an active layer. However, light having a wavelength of more than 1200 nm has a problem in that the intensity of light is drastically reduced by p-type doping of the clad layer, making it difficult to oscillate by current injection.

Accordingly, the present invention solves the problems of the prior art described above, and an object of the present invention is to be suitable as a light source for optical pumping, and in particular to output a high power laser having a wavelength of 1200 nm to 1500 nm, which is suitable for a Raman amplifier, The present invention provides a high power surface emitting semiconductor laser device that performs longitudinal mode and single transverse mode oscillation, and a method of manufacturing the same.

1 is a cross-sectional view showing a surface-emitting semiconductor laser device according to an embodiment of the present invention;

2A to 2E are views for explaining a method of manufacturing the surface emitting semiconductor laser device of FIG.

3 is a cross-sectional view showing a surface-emitting semiconductor laser device according to another embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

1, 7 ... bottom Distributed Bragg Reflector

2, 8 ... active layer

3 ... first upper DBR

4 ... PCB

5 ... AlGaAs layer

6 ... second upper DBR

9 ... upper DBR

10 ... n-type electrode

11 ... p-type electrode

12 ... laser beam

13 ... optical lens

14 ... intermediate DBR

In order to achieve the above object, the surface-emitting semiconductor laser device according to the first aspect of the present invention, the lower DBR (Distributed Bragg Reflector) and the first upper DBR and the first DBR formed between the lower DBR and the first upper DBR A first light emitting structure comprising a first active layer, disposed on one side of the GaAs substrate, electrically pumped to emit light at a first wavelength; A second active layer formed between the lower DBR and the upper DBR and the lower DBR and the upper DBR, the second active layer being disposed on the other side of the GaAs substrate, the second light emitting layer having a second wavelength by light of the first wavelength of the first light emitting structure; A second light emitting structure in which light of a wavelength is optically excited; And a pair of electrodes respectively bonded to the lower DBR of the first light emitting structure and the other surface of the GaAs substrate, wherein the surface emitting semiconductor laser device is disposed between the first light emitting structure and the second light emitting structure. And an optical lens formed on the other surface of the GaAs substrate, and further comprising a second upper DBR belonging to the first light emitting structure between the optical lens and the second light emitting structure.

In the above-described present invention, the lower DBR of the first light emitting structure has a reflectance higher than the total reflectivity of the first and second upper DBR, and is doped in a p-type or n-type, and the lower DBR of the second light emitting structure is It has a reflectance higher than the reflectance of the upper DBR.

In addition, in the present invention described above, by using a coupled cavity consisting of the first active layer of the first light emitting structure, the GaAs substrate and the optical lens to emit light of the first wavelength in a single longitudinal mode It features.

In addition, in the present invention described above, the optical lens has a lens shape by partially oxidizing the Al _x Ga _1-x As layer grown so that the mole fraction value of aluminum (Al) increases toward the upper direction by side wet oxidation. And oscillate in a single transverse mode using the optical lens.

In addition, in the present invention described above, the second upper DBR of the first light emitting structure and the upper and lower DBR of the second light emitting structure are composed of a semiconductor or an oxide oxidized semiconductor.

Also in the present invention described above, the layers formed on the other side of the GaAs substrate are partially etched in a direction orthogonal to the GaAs substrate to have a smaller cross-sectional area than the other side of the GaAs substrate, and the layers are etched and removed. An electrode is disposed on the surface of the GaAs substrate.

In addition, in the present invention described above, the second light emitting structure further comprises a dielectric DBR further disposed on the upper surface of the upper DBR of the second light emitting structure that is the final light emitting surface to completely block the beam of the first wavelength that is not absorbed. It is characterized by including.

In addition, the surface-emitting semiconductor laser device according to the second aspect of the present invention includes a lower distributed Bragg reflector (DBR) and a first upper DBR and a first active layer formed between the lower DBR and the first upper DBR, GaAs A first light emitting structure disposed on one side of the substrate and electrically pumped to emit light at a first wavelength; A second active layer formed between the intermediate DBR and the upper DBR and the intermediate DBR and the upper DBR, the second active layer being disposed on the other side of the GaAs substrate, wherein the second light is emitted by light of the first wavelength of the first light emitting structure. A second light emitting structure in which light of a wavelength is optically excited; And a pair of electrodes respectively bonded to the lower DBR of the first light emitting structure and the other surface of the GaAs substrate, wherein the surface emitting semiconductor laser device is disposed between the first light emitting structure and the second light emitting structure. And an optical lens formed on the other side of the GaAs substrate, wherein the intermediate DBR of the second light emitting structure also functions as a second upper DBR belonging to the first light emitting structure.

In addition, the method for manufacturing a surface-emitting semiconductor laser device according to the present invention includes (a) a first upper DBR, an active layer and the first conductive type doped with a first conductivity type on one side of a GaAs substrate having a first conductivity type Sequentially growing a lower DBR doped with a second conductivity type of opposite polarity to form a first light emitting structure that emits a first wavelength by electrical pumping; (b) forming an Al _x Ga _1-x As layer grown on the other side of the GaAs substrate by increasing the mole fraction of aluminum in an upward direction; (c) forming a second upper DBR belonging to the first light emitting structure on the Al _x Ga _1-x As layer; (d) sequentially growing another lower DBR, an active layer, and an upper DBR on the second upper DBR to form a second light emitting structure in which light of a second wavelength is optically excited by the light of the first wavelength; (e) partially etching the layers formed on the other side of the GaAs substrate so that the surface of the GaAs substrate is exposed; (f) oxidizing the Al _x Ga _1-x As layer by lateral wet oxidation to form an optical lens; And (g) forming an electrode of a first conductivity type on the surface of the GaAs substrate exposed by the partial etching, and forming an electrode of a second conductivity type in contact with the lower DBR. .

In the above-described method of the present invention, the lower DBR, the first upper DBR and the second upper DBR of the first light emitting structure, and the lower DBR and the upper DBR of the second light emitting structure are formed of an Al (Ga) As / GaAs layer. It is formed by the cross-lamination, the active layer is characterized in that formed by the lamination of the InGaAs (N) layer.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.

<First Embodiment>

1 is a cross-sectional view showing a surface-emitting semiconductor laser device according to an embodiment of the present invention. Referring to FIG. 1, a high power semiconductor laser device according to an embodiment of the present invention basically includes a first light emitting structure, a second light emitting structure, a substrate, an optical lens, and at least a pair of electrodes.

More specifically, the first light emitting structure includes a lower DBR (1) and an active layer (cavity) 2 for the first wavelength and a first upper DBR (3) for the first wavelength and a second upper portion for the first wavelength. It consists of DBR (6). The lower DBR 1 and the first upper DBR 3 for the first wavelength are doped with p-type and n-type, respectively, and are electrically conductive. The first upper DBR 3 and the second upper DBR 6 for the first wavelength are disposed with the n-type GaAs substrate 4 interposed therebetween. Further, an optical lens 13 formed by wet oxidation of the AlGaAs layer 5 is further disposed between the first upper DBR 3 and the second upper DBR 6 for the first wavelength. The second light emitting structure consists of a lower DBR 7 and an active layer 8 for the second wavelength and an upper DBR 9 for the second wavelength. The second light emitting structure is disposed above the second upper DBR 6 for the first wavelength. The n-type electrode 10 is disposed on the main surface of the n-type GaAs substrate 4 in the direction in which the second light emitting structure is arranged, and the p-type electrode (10) is in contact with the lower DBR 1 of the first wavelength on the back side of the substrate 4. 11) is arranged.

Specifically, the present invention electrically pumps the first active layer 2 at the bottom of the device to oscillate the laser beam of the first wavelength. The lower DBR (1) for the first wavelength is designed to have a higher reflectance than the upper DBR, for example 99.9%, like the lower DBR of the general VCSEL and is doped with a specific polarity, i. have.

The above-described DBRs (1, 3, 6, 7, and 9) are fabricated by alternately stacking GaAs / AlAs or GaAs / AlGaAs layers, and can usually secure desired reflectivity between 20 to 40 pairs. In addition, the thickness of the DBR becomes several micrometers (within 10 micrometers). That is, a normal DBR is produced by alternately stacking a low refractive index material and a high refractive index material having a predetermined thickness (wavelength of light / (refractive index of material * 4)). Thus, the thickness of a pair depends on the refractive index and the oscillation wavelength of the material, but usually has a thickness of several tens of nanometers. That is, the thickness of the DBRs (1, 3, 6, 7, and 9) used in the structure of this embodiment has a thickness of about several micrometers.

In addition, a first upper DBR 3 for the first wavelength is formed on the active layer 2. The first upper DBR 3 is designed such that the total reflectance with the second upper DBR 6 is lower than that of the lower DBR 1 so that the oscillated beam is directed in the upper direction, that is, the direction perpendicular to the main surface of the device. . The cavity formed by the first active layer 2 between the lower DBR 1 and the first upper DBR 3 for the first wavelength and between the first upper DBR 3 and the second upper DBR 6. Another cavity formed by the GaAs substrate 4 and the optical lens 13, ie, a coupled cavity consisting of two cavities, is used to make it possible to oscillate light of the first wavelength in a single species mode. That is, when it is formed to have a lambda (unit wavelength) or a number lambda (unit wavelength) thickness that is the same thickness as the oscillation wavelength of the active layer / cavity 2 with respect to the first wavelength, there can be only one or several cavity modes. In the case of only a few dogs, the distance between each mode, or wavelength, is far apart. On the other hand, since the distance d between the optical lens 13 and the upper portion of the first upper DBR 3, which serve as another cavity, is very large compared to the oscillation wavelength, very many cavity modes are densely distributed. However, in this coupled cavity structure, the oscillation only oscillates in the coincident mode of the two cavity modes described above, and can be designed such that one cavity mode exists within the gain profile of the active layer, so that single species mode oscillation is possible. Do.

The above-mentioned first upper DBR 3 is made of several micrometers (typically within 5 µm) in thickness so as to show reflectivity of several tens or more in several pairs or dozen pairs. At this time, the size a of the oscillation region is from several tens of micrometers to several hundred micrometers or more for high power oscillation. Further, an optical lens 13 is provided between the first light emitting structure and the second light emitting structure in order to perform single transverse mode oscillation in a device having a large oscillation region.

The optical lens 13 is grown so that the mole fraction (x) of aluminum (Al) increases as the Al _x Ga _1-x As layer is upward, and the upper portion having the high mole fraction of aluminum is formed in the form of a lens by the side wet oxidation method. To be oxidized. At this time, the radius of curvature of the fabricated lens is coincided with the beam wave front of the oscillated beam so as to be a single transverse mode oscillation. Such selective wet oxidation techniques are described in O. Blum, CIH Ashby, and HQ Hou, "Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements," Appl. Phys. Lett. Vol. 70, no. 21, (26 May 1997). In addition, the distance b between the lens and the active layer can be adjusted by the size (a) of the oscillation region, the radiation angle of the beam, and the radius of curvature of the lens in the range of tens of micrometers to thousands of micrometers or more.

The second top DBR 6, together with the first top DBR 3, designs the number of layer pairs to have a reflectance (95-99.9%) that the top DBR of a typical VCSEL has. The second top DBR 6 here need not be doped to enable electrical conducting.

The oscillated beam of the first wavelength optically pumps the active layer 8 of the second wavelength such that the beam of the second wavelength emerges upwards. Thus, the first wavelength is shorter than the second wavelength. For example, the first wavelength may be 980 nm, and the second wavelength may be designed to be 1200 to 1500 nm suitable for a Raman optical amplifier. The reflectance of the lower DBR 7 of the second wavelength is designed to be higher than the reflectance of the upper DBR 9. Since the second wavelength operates with optical pumping, the DBRs 7 and 9 for the second wavelength need not be doped to have electrical polarity. This has a further important meaning in the present invention, that is, light in the wavelength band of more than 1 micrometer, which is the wavelength of the main application of the present invention, Raman optical amplifier, is absorbed by p- (Al) GaAs, that is, by doping level. Absorption is very large, and therefore, it is very difficult to fabricate a high efficiency semiconductor laser by electric pumping based on GaAs, but the present invention solves this problem by using optical excitation.

The principle of manufacturing the surface-emitting semiconductor laser device of the present invention will be described in detail with reference to Figs. 2A to 2E. As shown in FIG. 2A, first, an n-type doped first upper DBR 3 and an active layer 2 and a p-type doped lower DBR 1 are formed on one surface of an n-type GaAs substrate 4. Grow sequentially. This basically forms a first light emitting structure that emits a first wavelength by electrical pumping.

Next, as shown in FIG. 2B, the Al _x Ga _1-x As layer 5 is grown on the other side of the GaAs substrate 4 by increasing the mole fraction of aluminum (Al) upward. Then, a second upper DBR 6 for the first wavelength is grown on the Al _x Ga _1-x As layer 5. The lower DBR 7 for the second wavelength, the active layer 8 for the second wavelength, and the upper DBR 9 for the second wavelength are sequentially grown on the second upper DBR 6. This forms a second light emitting structure in which the light of the second wavelength is optically excited by the light of the first wavelength of the first light emitting structure described above. Of course, it is as described above that the second upper DBR 6 belongs to the first light emitting structure.

Next, as shown in FIG. 2C, the above-described layers 5, 6, 7, 8, and 9 are partially etched so that a part of the surface of the GaAs substrate 4 is exposed. This etching process is done, for example, by selective etching. That is, GaAs and AlGaAs are selectively etched by applying a reactive ion etching (RIE) process using CCl ₂ F ₂ gas.

Then, as shown in FIG. 2D, the Al _x Ga _1-x As layer 5 is oxidized by the lateral wet oxidation method to form the optical lens 13. The formation of the lens 13 consists of a semiconductor oxidation process capable of selectively oxidizing aluminum-gallium-arsenic (AlGaAs) layers buried deep in the device structure.

Finally, as shown in FIG. 2E, an n-type electrode 10 is formed on the other surface of the GaAs substrate 4 exposed by the above-described partial etching, and the p-type electrode is in contact with the lower DBR 1. To form.

The growth of each layer in the above-described steps may be performed by a process such as a molecular beam epitaxy (MBE), a metal-organic chemical vapor deposition (MOCVD).

Further, in the above-described steps, the lower DBR 1, the first upper DBR 3, and the second upper DBR 6 of the first light emitting structure, and the lower DBR 7 and the upper part of the second light emitting structure. DBR (9) is formed by cross-lamination of Al (Ga) As / GaAs layers, respectively, and the active layers (2, 8) are a stack of InGaAs (N) layers, which are three- or four-membered hybrid systems designed for the desired wavelength. It can be formed by each.

On the other hand, in the present invention, in addition to the method described in the above-described embodiment, the two substrates are grown by wafer fusion after growing the layers indicated by reference numerals 1,2 and 3 and the remaining layers on the different substrates, respectively. It is also possible to make a paste.

In addition, the DBR denoted by reference numerals 6, 7, and 9 may be a semiconductor DBR composed of a conventional stack of Al (Ga) As / GaAs, but the AlAs are oxidized together without protecting the side in the optical lens configuration. It can be designed as DBR composed of Al oxide.

In this embodiment, the n-type GaAs substrate 4 is used as an example. However, the p-type substrate can be used instead of the n-type substrate to manufacture the surface-emitting semiconductor laser device. In this case, the diode The main surface of the GaAs substrate 4 in the direction in which the lower DBR 1 and the first upper DBR 3 for the first wavelength described above should be doped n-type and p-type, respectively, and the second light emitting structure is disposed. The p-type electrode is disposed on the back side of the substrate 4, and the n-type electrode is disposed in contact with the lower DBR 1 of the first wavelength.

Second Embodiment

3 is a cross-sectional view showing a surface-emitting semiconductor laser device according to another embodiment of the present invention. Referring to FIG. 3, a high power semiconductor laser device according to another embodiment of the present invention basically includes a first light emitting structure, a second light emitting structure, a substrate, an optical lens, and at least one pair of electrodes, and the like. Most of the configuration is the same as the embodiment of the present invention described above.

However, the intermediate DBR 14 is provided in place of the second upper DBR 6 of the first light emitting structure and the lower DBR 7 of the second light emitting structure in the embodiment of the present invention described above. It is distinguished from the embodiment of the present invention described above.

In other words, in the present embodiment, when fabricating a DBR, the unit layer thickness of the DBR, the Al mole fraction of the Al (Ga) As layer, and the number of stacked Al (Ga) As / GaAs layers are controlled. For each of the two wavelengths, one wide stop band is used which simultaneously has the reflectivity that the second upper DBR of the first light emitting structure and the lower DBR of the second light emitting structure should each have by design. One DBR, that is, an intermediate DBR 14, is formed.

Meanwhile, although not specifically mentioned in the above embodiments, the apparatus of the present invention may further include a heat sink contacted over the first oscillation structure to effectively release heat generated inside the apparatus.

In addition, if it is necessary to completely block the beam of the first wavelength oscillated according to the application, it may be further provided with a DBR for blocking it. In such a case, a dielectric DBR may be formed on the light emitting surface (above the upper DBR 9 for the second wavelength) of the device rather than the semiconductor DBR to effectively block the beam of the first wavelength.

As described above, according to the present invention, it is possible to provide a high power surface emitting semiconductor laser device that performs single transverse mode oscillation and single transverse mode oscillation.

In addition, according to the present invention, by optically pumping a beam of 1200 nm or more, the device efficiency is prevented from being reduced by free carrier absorption.

In addition, since the oscillation area is wide, the light output is not limited by COD (Catastrophic Optical Damage).

In addition, the heat sink can be contacted over the first oscillation structure, which is very advantageous for high power.

Claims (10)

A lower DBR (Distributed Bragg Reflector) 1 and a first upper DBR 3 and a first active layer 2 formed between the lower DBR 1 and the first upper DBR 3, and comprising a GaAs substrate ( A first light emitting structure disposed on one side of 4) and electrically pumped to emit light at a first wavelength; A second active layer 8 formed between the lower DBR 7 and the upper DBR 9 and the lower DBR 7 and the upper DBR 9, on the other side of the GaAs substrate 4. A second light emitting structure in which the light of the second wavelength is optically excited by the light of the first wavelength of the first light emitting structure; And A surface-emitting semiconductor laser device comprising a pair of electrodes (10, 11) bonded to the lower DBR (1) of the first light emitting structure and the other surface of the GaAs substrate (4), respectively, An optical lens 13 formed on the other surface of the GaAs substrate 4 between the first light emitting structure and the second light emitting structure, And a second upper DBR (6) belonging to the first light emitting structure between the optical lens (13) and the second light emitting structure. The method of claim 1, The lower DBR 1 of the first light emitting structure has a reflectance higher than the total reflectance of the first and second upper DBRs 3 and 6 and is doped with a p-type or n-type, And the lower DBR (7) of the second light emitting structure has a reflectance higher than that of the upper DBR (9). The method of claim 1, By using a coupled cavity consisting of the first active layer (2) of the first light emitting structure, the GaAs substrate (4) and the optical lens (13) to emit light of the first wavelength in a single longitudinal mode Surface-emitting semiconductor laser device, characterized in that. The method of claim 1, The optical lens 13 is formed into a lens shape by partially oxidizing the Al _x Ga _1-x As layer 5 grown to have an increased mole fraction value of aluminum (Al) toward the upper direction by side wet oxidation. Become, Surface-emitting semiconductor laser device, characterized in that the oscillation in a single transverse mode using the optical lens (13). The method of claim 1, And a second upper DBR (6) of the first light emitting structure and upper and lower DBRs (7, 9) of the second light emitting structure are composed of a semiconductor or an oxide oxidized semiconductor. The method of claim 1, The layers 5, 6, 7, 8, 9 formed on the other side of the GaAs substrate 4 are orthogonal to the GaAs substrate 4 to have a smaller cross-sectional area than the other side of the GaAs substrate 4. Partially etched in the direction, Surface-emitting semiconductor laser device, characterized in that an electrode (10) is disposed on the surface of the GaAs substrate (4) from which the layers (5, 6, 7, 8, 9) are etched away. The method of claim 1, The second light emitting structure further comprises a dielectric DBR further disposed on the upper surface of the upper DBR 9 of the second light emitting structure as a final light emitting surface to completely block the beam of the first wavelength which is not absorbed. Surface-emitting semiconductor laser device. A lower DBR (Distributed Bragg Reflector) 1 and a first upper DBR 3 and a first active layer 2 formed between the lower DBR 1 and the first upper DBR 3, and comprising a GaAs substrate ( A first light emitting structure disposed on one side of 4) and electrically pumped to emit light at a first wavelength; An intermediate DBR 14 and an upper DBR 9 and a second active layer 8 formed between the intermediate DBR 14 and the upper DBR 9, on the other side of the GaAs substrate 4. A second light emitting structure in which the light of the second wavelength is optically excited by the light of the first wavelength of the first light emitting structure; And A surface-emitting semiconductor laser device comprising a pair of electrodes (10, 11) bonded to the lower DBR (1) of the first light emitting structure and the other surface of the GaAs substrate (4), respectively, An optical lens 13 formed on the other side of the GaAs substrate 4 between the first light emitting structure and the second light emitting structure; And the intermediate DBR (14) of the second light emitting structure also functions as a second upper DBR belonging to the first light emitting structure. In the manufacturing method of the surface emitting semiconductor laser device, (a) a first upper DBR 3 and an active layer 2 doped with a first conductivity type on one side of a GaAs substrate 4 having a first conductivity type and a second polarity opposite to the first conductivity type Sequentially growing a lower DBR (1) doped with conductivity to form a first light emitting structure that emits a first wavelength by electrical pumping; (b) forming an Al _x Ga _1-x As layer 5 grown on the other side of the GaAs substrate 4 by increasing the mole fraction of aluminum (Al) in an upward direction; (c) forming a second upper DBR (6) belonging to the first light emitting structure on the Al _x Ga _1-x As layer (5); (d) the lower DBR 7, the active layer 8 and the upper DBR 9 are sequentially grown on the second upper DBR 6 so that light of the second wavelength is optically excited by the light of the first wavelength. Forming a second light emitting structure; (e) partially etching the layers (5, 6, 7, 8, 9) to expose the surface of the GaAs substrate (4); (f) oxidizing the Al _x Ga _1-x As layer (5) by side wet oxidation to form an optical lens (13); And (g) forming a first conductive electrode 10 on the surface of the GaAs substrate 4 exposed by the partial etching, and forming a second conductive electrode in contact with the lower DBR 1. Method of manufacturing a surface-emitting semiconductor laser device comprising the step. The method of claim 9, The lower DBR (1), the first upper DBR (3) and the second upper DBR (6) of the first light emitting structure, and the lower DBR (7) and the upper DBR (9) of the second light emitting structure are Al (Ga). Formed by cross-lamination of As / GaAs layers, The active layers (2, 8) are formed by laminating an InGaAs (N) layer.