KR20040019366A - 높은 종횡비 피쳐의 다이나믹 펄스 도금 - Google Patents
높은 종횡비 피쳐의 다이나믹 펄스 도금 Download PDFInfo
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- KR20040019366A KR20040019366A KR10-2004-7001141A KR20047001141A KR20040019366A KR 20040019366 A KR20040019366 A KR 20040019366A KR 20047001141 A KR20047001141 A KR 20047001141A KR 20040019366 A KR20040019366 A KR 20040019366A
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- South Korea
- Prior art keywords
- pulse
- electroplating
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- 238000007747 plating Methods 0.000 title description 29
- 238000009713 electroplating Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000000034 method Methods 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 238000005868 electrolysis reaction Methods 0.000 claims abstract description 27
- 238000004070 electrodeposition Methods 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 13
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 7
- 229910001431 copper ion Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 28
- 238000001465 metallisation Methods 0.000 abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 25
- 229910052802 copper Inorganic materials 0.000 description 25
- 239000010949 copper Substances 0.000 description 25
- 230000008021 deposition Effects 0.000 description 22
- 239000003112 inhibitor Substances 0.000 description 17
- 239000003792 electrolyte Substances 0.000 description 13
- 239000000654 additive Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 150000002739 metals Chemical class 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 241000894007 species Species 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 241000393496 Electra Species 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 copper Chemical class 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009429 electrical wiring Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000008364 bulk solution Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Description
Claims (20)
- 기판상에 금속을 전기도금하는 방법으로서:(a) 전기분해 펄스 이후에 전기증착 펄스를 인가하는 것을 포함하는 둘 이상의 사이클을 순차적으로 기판에 인가하는 단계로서, 이때 상기 각각의 전기증착 펄스는 지속시간을 가지며, 상기 순차적으로 인가되는 사이클의 각각의 전기증착 펄스의 지속시간은 동일하게 유지되거나 감소되는, 사이클 인가 단계를 포함하는 전기도금 방법.
- 제 1 항에 있어서, 영(zero)의 전기 펄스 시간 간격이 각 사이클을 분리하는 전기도금 방법.
- 제 2 항에 있어서, 상기 영의 전기 펄스 시간 간격이 약 1 밀리초 내지 약 500 밀리초인 전기도금 방법.
- 제 1 항에 있어서, 각각의 상기 전기증착 펄스는 약 0.5 암페어 내지 약 10 암페어의 진폭을 가지는 전기도금 방법.
- 제 1 항에 있어서, 각각의 상기 전기증착 펄스는 약 500 밀리초 내지 약 3000 밀리초의 지속시간을 가지는 전기도금 방법.
- 제 1 항에 있어서, 각각의 상기 전기분해 펄스는 약 3 암페어 내지 약 60 암페어의 진폭을 가지는 전기도금 방법.
- 제 1 항에 있어서, 상기 전기분해 펄스는 약 1 밀리초 내지 약 500 밀리초의 지속시간을 가지는 전기도금 방법.
- 제 1 항에 있어서, 상기 순차적으로 인가되는 사이클의 전기증착 펄스의 지속시간은 약 5 밀리초 내지 약 50 밀리초 만큼 감소되는 전기도금 방법.
- 제 1 항에 있어서, 상기 단계(a)는 영의 전기 펄스의 시간 간격과 대략적으로 동일한 확산 시간 상수를 가지는 화학물질을 포함하는 전기도금욕내에서 기판에 대해 실시되는 전기도금 방법.
- 제 9 항에 있어서, 상기 전기도금욕은 구리 이온을 더 포함하는 전기도금 방법.
- 트렌치를 구비하는 기판상에 금속을 전기도금하는 방법으로서:(a) 전기분해 펄스 이후에 전기증착 펄스를 인가하는 것을 포함하는 둘 이상의 사이클을 순차적으로 기판에 인가하는 단계로서, 이때 상기 각각의 전기증착 펄스는 지속시간을 가지며, 상기 순차적으로 인가되는 사이클의 각각의 전기증착 펄스의 지속시간은 동일하게 유지되거나 감소되는, 사이클 인가 단계; 및(b) 금속을 기판상에 원하는 두께까지 증착하기 위해 상기 기판에 DC 전류를 인가하는 단계를 포함하는 전기도금 방법.
- 제 11 항에 있어서, 각 사이클을 분리하는 영(zero)의 전기 펄스 시간 간격을 제공하는 단계를 더 포함하는 전기도금 방법.
- 제 12 항에 있어서, 상기 영의 전기 펄스 시간 간격이 약 1 밀리초 내지 약 500 밀리초인 전기도금 방법.
- 제 11 항에 있어서, 각각의 상기 전기증착 펄스는 약 0.5 암페어 내지 약 10 암페어의 진폭을 가지는 전기도금 방법.
- 제 11 항에 있어서, 각각의 상기 전기증착 펄스는 약 500 밀리초 내지 약 3000 밀리초의 지속시간을 가지는 전기도금 방법.
- 제 11 항에 있어서, 각각의 상기 전기분해 펄스는 약 3 암페어 내지 약 60 암페어의 진폭을 가지는 전기도금 방법.
- 제 11 항에 있어서, 상기 전기분해 펄스는 약 1 밀리초 내지 약 500 밀리초의 지속시간을 가지는 전기도금 방법.
- 제 11 항에 있어서, 상기 순차적으로 인가되는 사이클의 전기증착 펄스의 지속시간은 약 5 밀리초 내지 약 50 밀리초 만큼 감소되는 전기도금 방법.
- 제 11 항에 있어서, 상기 단계(a)는 영의 전기 펄스의 시간 간격과 대략적으로 동일한 확산 시간 상수를 가지는 화학물질을 포함하는 전기도금욕내에서 기판에 대해 실시되는 전기도금 방법.
- 제 19 항에 있어서, 상기 전기도금욕은 구리 이온을 더 포함하는 전기도금 방법.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/916,365 | 2001-07-26 | ||
| US09/916,365 US6881318B2 (en) | 2001-07-26 | 2001-07-26 | Dynamic pulse plating for high aspect ratio features |
| PCT/US2002/022883 WO2003010364A2 (en) | 2001-07-26 | 2002-07-18 | Dynamic pulse plating for high aspect ratio features |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040019366A true KR20040019366A (ko) | 2004-03-05 |
Family
ID=25437150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2004-7001141A Ceased KR20040019366A (ko) | 2001-07-26 | 2002-07-18 | 높은 종횡비 피쳐의 다이나믹 펄스 도금 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6881318B2 (ko) |
| KR (1) | KR20040019366A (ko) |
| CN (1) | CN1636084A (ko) |
| TW (1) | TWI270583B (ko) |
| WO (1) | WO2003010364A2 (ko) |
Families Citing this family (55)
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|---|---|---|---|---|
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| US7323416B2 (en) * | 2001-03-14 | 2008-01-29 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6899804B2 (en) * | 2001-04-10 | 2005-05-31 | Applied Materials, Inc. | Electrolyte composition and treatment for electrolytic chemical mechanical polishing |
| US6811680B2 (en) * | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
| US20060169597A1 (en) * | 2001-03-14 | 2006-08-03 | Applied Materials, Inc. | Method and composition for polishing a substrate |
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| DE10223957B4 (de) * | 2002-05-31 | 2006-12-21 | Advanced Micro Devices, Inc., Sunnyvale | Ein verbessertes Verfahren zum Elektroplattieren von Kupfer auf einer strukturierten dielektrischen Schicht |
| US20040118691A1 (en) * | 2002-12-23 | 2004-06-24 | Shipley Company, L.L.C. | Electroplating method |
| EP1595289A4 (en) * | 2003-02-19 | 2009-04-15 | Honeywell Int Inc | THERMAL INTERCONNECTION SYSTEMS, METHODS OF PRODUCTION THEREOF AND USES THEREOF |
| DE10311575B4 (de) * | 2003-03-10 | 2007-03-22 | Atotech Deutschland Gmbh | Verfahren zum elektrolytischen Metallisieren von Werkstücken mit Bohrungen mit einem hohen Aspektverhältnis |
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| JP4540981B2 (ja) * | 2003-12-25 | 2010-09-08 | 株式会社荏原製作所 | めっき方法 |
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| FI20041525L (fi) * | 2004-11-26 | 2006-03-17 | Imbera Electronics Oy | Elektroniikkamoduuli ja menetelmä sen valmistamiseksi |
| US20060219663A1 (en) * | 2005-03-31 | 2006-10-05 | Applied Materials, Inc. | Metal CMP process on one or more polishing stations using slurries with oxidizers |
| US20060226014A1 (en) * | 2005-04-11 | 2006-10-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and process for improved uniformity of electrochemical plating films produced in semiconductor device processing |
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| CN103280426A (zh) * | 2013-05-31 | 2013-09-04 | 华进半导体封装先导技术研发中心有限公司 | 一种通过电流编程防止tsv过电镀的方法 |
| CN103484908B (zh) * | 2013-09-29 | 2016-09-21 | 华进半导体封装先导技术研发中心有限公司 | Tsv电化学沉积铜方法 |
| US10253409B2 (en) | 2014-04-23 | 2019-04-09 | Src Corporation | Method of manufacturing graphene using metal catalyst |
| US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
| US10000860B1 (en) * | 2016-12-15 | 2018-06-19 | Applied Materials, Inc. | Methods of electrochemical deposition for void-free gap fill |
| US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
| US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
| US11203816B1 (en) * | 2020-10-23 | 2021-12-21 | Applied Materials, Inc. | Electroplating seed layer buildup and repair |
| CN113629006B (zh) * | 2021-07-26 | 2024-04-23 | 长江存储科技有限责任公司 | 形成铜结构的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19545231A1 (de) * | 1995-11-21 | 1997-05-22 | Atotech Deutschland Gmbh | Verfahren zur elektrolytischen Abscheidung von Metallschichten |
| US6071398A (en) * | 1997-10-06 | 2000-06-06 | Learonal, Inc. | Programmed pulse electroplating process |
| US6261433B1 (en) * | 1998-04-21 | 2001-07-17 | Applied Materials, Inc. | Electro-chemical deposition system and method of electroplating on substrates |
| US6004188A (en) | 1998-09-10 | 1999-12-21 | Chartered Semiconductor Manufacturing Ltd. | Method for forming copper damascene structures by using a dual CMP barrier layer |
| US6524461B2 (en) * | 1998-10-14 | 2003-02-25 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals in small recesses using modulated electric fields |
| TW483102B (en) | 1999-04-27 | 2002-04-11 | Taiwan Semiconductor Mfg | Manufacturing method of copper damascene |
| EP1132500A3 (en) * | 2000-03-08 | 2002-01-23 | Applied Materials, Inc. | Method for electrochemical deposition of metal using modulated waveforms |
| US6551485B1 (en) * | 2000-10-17 | 2003-04-22 | Faraday Technology Marketing Group, Llc | Electrodeposition of metals for forming three-dimensional microstructures |
-
2001
- 2001-07-26 US US09/916,365 patent/US6881318B2/en not_active Expired - Lifetime
-
2002
- 2002-07-18 KR KR10-2004-7001141A patent/KR20040019366A/ko not_active Ceased
- 2002-07-18 CN CNA028148134A patent/CN1636084A/zh active Pending
- 2002-07-18 WO PCT/US2002/022883 patent/WO2003010364A2/en not_active Application Discontinuation
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2003010364A2 (en) | 2003-02-06 |
| WO2003010364A3 (en) | 2004-11-18 |
| US20030019755A1 (en) | 2003-01-30 |
| US6881318B2 (en) | 2005-04-19 |
| TWI270583B (en) | 2007-01-11 |
| CN1636084A (zh) | 2005-07-06 |
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